JP2006042011A - Electromechanical resonator and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electromechanical resonator wherein a highly accurate narrow gap between a vibrator and an electrode is formed by a simple method. <P>SOLUTION: The gap formed between the vibrator 202 and the electrode 203 is made to be a gap smaller than a minimum gap manufacturable by the semiconductor manufacturing technology by displacing either of the two after the processing, and the vibrator with a greater electrostatic force is excited, or a greater current caused by the vibration is produced. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an electromechanical resonator and a method of manufacturing the same, and more particularly to an electromechanical resonator capable of realizing a high-performance filter circuit by narrowing a gap in an electric circuit integrated with high density.

  In recent years, as a filter using an electromechanical resonator, a filter that excites a vibrating body with an electrostatic force and converts the vibration into an electric signal again has been proposed (for example, see Non-Patent Document 1). FIG. 10 shows the principle of the conventional mechanical resonator described in Non-Patent Document 1, FIG. 10 (a) is a plan view, and FIG. 10 (b) is a cross-sectional view taken along line AA ′. Show.

  10A and 10B, reference numeral 101 denotes a disk-type vibrating body, which is fixed to the substrate 103 via an anchor 102 located at the center of the disk. Reference numeral 104 denotes an excitation electrode disposed on the half circumference of the disk via the gap g, and reference numeral 105 denotes a detection electrode disposed on the other half circumference via the gap g. In this resonator, a resonance mode (disk contour mode) in which the vibrating body 101 expands and contracts in the radial direction is used. As shown in FIG. 10C, when an AC signal vi is applied between the excitation electrode 104 and the vibrating body 101, an electrostatic force is applied to the vibrating body 101 to excite the vibration, and the vibration amplitude is near the resonance frequency. Maximum. This vibration is detected as the generation of a current i accompanying the capacitance change between the vibrating body 101 and the detection electrode 105, and as a result, a bandpass filter having a pass band near the resonance frequency between the input port in and the output port out. Composed.

  When the disk radius is r, the capacitance between the excitation electrode 104 and the vibrating body 101 is C, and the capacitance between the detection electrode 105 and the vibrating body 101 is C, the electrostatic force F acting on the vibrating body is (several In 1), the current i generated by the vibration of the vibrating body is expressed by (Expression 2).

From (Equation 1) and (Equation 2), as ΔC / Δr increases, the excitation force to the vibrating body increases and the detected current value also increases, so that a filter with high energy conversion efficiency can be configured. Since ΔC / Δr takes a larger value as the value of the gap g is smaller as shown in (Equation 3), it is desirable that the value of g is as small as possible.

  In the electromechanical resonator disclosed in Non-Patent Document 1, the value of the gap g is 100 nm with respect to a disk diameter of 20 μm.

Jing Wang, Zeying Ren, and Clark T.-C. Nguyen, "SELF-ALIGNED 1.14-GHZ VIBRATING RADIAL-MODE DISK RESONATORS", TRANSDUCERS '03, Boston, June 2003, pp.947-950

  However, in the above configuration, a complicated manufacturing process is required to form the gap g. About the area | region B of Fig.10 (a) which shows the said structure, the outline of the manufacturing method is shown in FIG. In FIG. 11, the edge of the detection electrode 105 protrudes above the vibrating body 103 due to a processing problem, but there is no influence because it is sufficiently separated. As shown in FIG. 11A, the first sacrificial layer (silicon oxide film) S1, the vibrator (polysilicon) 101, and the second sacrificial layer (silicon oxide film) are formed on the silicon substrate 103 by a semiconductor manufacturing technique. S2, a third sacrificial layer (silicon oxide film) S3, and an electrode (polysilicon) 105 are sequentially stacked. The sacrificial layer is finally removed with hydrofluoric acid, so that the vibrating body can vibrate, and a gap g determined by the thickness of the third sacrificial layer S3 is formed between the vibrating body 101 and the electrode 105 ( (B) in FIG.

In the manufacturing process shown in FIG. 11, a large number of masks are used to repeatedly form and pattern the first to third sacrificial layers S1 to S3, the vibrating body 101, and the electrodes (104, 105). It was necessary and had the subject that manufacturing cost started. Further, there is a problem that the narrower the gap g is aimed, the slower the etchant wraps around, so that the etching speed of the third sacrificial layer is remarkably reduced.
Thus, it was very difficult to form the narrow gap g with high accuracy.
Further, since the characteristics greatly change depending on the size of the gap g, it is extremely important to make the size of the gap g fine and to set it with high accuracy.

  The present invention has been made in view of the above circumstances, and an object thereof is to provide an electromechanical resonator capable of forming a narrow gap between a vibrating body and an electrode with high accuracy by a simple method.

  In order to solve the above problems, an electromechanical resonator of the present invention includes a vibrating body that performs mechanical vibration and an electrode that is positioned in proximity to the vibrating body, and after the shape processing, the vibrating body Alternatively, the gap is narrowed by changing the position of the electrode and adjusting the relative position between the vibrating body and the electrode.

That is, the electromechanical resonator of the present invention includes a vibrating body that performs mechanical vibration and an electrode that is disposed at a predetermined interval with respect to the vibrating body, and the vibrating body generates mechanical vibration. An electromechanical resonator configured to be capable of electromechanical conversion, wherein an initial position of the vibrator or the electrode is displaced after processing.
With this configuration, it is possible to change the relative position between the vibrating body and the electrode after processing, thereby narrowing the gap. Therefore, it is not dependent only on processing accuracy, but beyond the processing limit, It is possible to adjust the thickness.

In the electromechanical resonator of the invention, the initial position of the vibrating body or the electrode is determined by a positioning mechanism so that the relative position between the vibrating body and the electrode becomes a narrower gap. including.
With this configuration, the relative position between the vibrating body and the electrode can be adjusted by the positioning mechanism and the gap can be narrowed.Therefore, not depending only on the machining accuracy but exceeding the machining limit, It is possible to adjust the size.

In the electromechanical resonator of the present invention, the positioning mechanism has a beam structure, and the drive source is stress accumulated in the beam during the manufacture of the beam. Includes a device that adjusts the relative position between electrodes.
Shape processing to have tensile internal stress or compressive internal stress, and use the stress relaxation after processing to narrow the gap, making it easy to create a narrow gap structure beyond the processing limit. Obtainable.

In the electromechanical resonator of the invention, the positioning mechanism includes a driving source that generates a moving force for displacing the position of the vibrating body or the electrode.
With this configuration, the relative position between the vibrating body and the electrode can be easily adjusted by using a drive source.

  In the electromechanical resonator of the invention, the drive source includes an electrode that generates an electrostatic force.

In the electromechanical resonator of the present invention, the vibrator and the electrode are manufactured on the same substrate by using a semiconductor manufacturing technique.
With this configuration, an electromechanical resonator with high accuracy and high reliability can be obtained using a simple semiconductor manufacturing technique.

The electromechanical resonator according to the invention includes one in which the positioning mechanism and the drive source are manufactured on the substrate by using a semiconductor manufacturing technique.
With this configuration, significant downsizing can be achieved. Here, the drive source is not limited as long as the drive circuit excluding the power supply is formed on the same substrate, and includes a power supply connected separately.

In the electromechanical resonator according to the aspect of the invention, the positioning mechanism may include a beam structure, and the vibrator or the electrode may be formed by displacing at least one beam of the beam structure by a predetermined amount by the driving source. In which the distance between the vibrating body and the electrode is finely adjusted from g to g ′.
With this configuration, when the distance between the vibrating body and the electrode immediately after processing is g, adjustment from g to g ′ is possible, and the excitation force to the vibrating body can be the square of g / g ′. The amplitude can be increased.

The electromechanical resonator of the invention includes the electromechanical resonator in which the positioning mechanism displaces an initial position of the vibrating body and the electrode by a predetermined amount in accordance with a voltage applied between the vibrating body and the electrode. .
According to this configuration, the initial positions of the vibrating body and the electrode can be determined in a plurality of stages depending on the voltage, and high-precision adjustment can be easily performed.

In the electromechanical resonator of the invention, the positioning mechanism includes a plurality of the beam structures.
According to this configuration, by connecting and using a plurality of beam structures, even when a large-voltage excitation signal is input and the first-stage gap is zero, that is, when a contact state occurs, the next-stage vibration body is excited. You can make it.

Moreover, the electromechanical resonator of the present invention includes one including a plurality of electromechanical resonators arranged in parallel electrically.
According to this configuration, there is an effect that it is possible to adjust the intervals between the plurality of stages of vibrating bodies and electrodes with one driving source.

The electromechanical resonator of the present invention includes the electromechanical resonator housed in a case sealed so as to be in a vacuum atmosphere.
According to this configuration, it is possible to form an electromechanical resonator having a long life and low noise. Further, the vibration of the vibrating body is not subjected to the viscous resistance of air.

The filter of the present invention is formed using the above electromechanical resonator.
According to this configuration, a highly sensitive, highly accurate and reliable filter can be obtained.

  The electric circuit of the present invention is formed using the above electromechanical resonator.

The method of manufacturing an electromechanical resonator of the present invention includes a vibrating body that performs mechanical vibration and an electrode disposed at a predetermined interval with respect to the vibrating body, and the vibrating body is a machine. A method of manufacturing an electromechanical resonator configured to generate an electromechanical vibration and enabling electromechanical conversion, comprising: forming a beam structure including the vibrator and the electrode on a substrate; And displacing the vibrating body or the electrode so that a distance between the vibrating body and the electrode becomes a desired value.
According to this method, after processing, the relative position between the vibrating body and the electrode can be adjusted and the gap can be narrowed, so it does not depend only on processing accuracy but exceeds the processing limit, Or it is possible to adjust the magnitude | size of a gap by displacing after a process.

According to the configuration of the electromechanical resonator of the present invention, it is possible to easily form an electromechanical resonator having excellent electrical / mechanical and mechanical / electrical conversion efficiency by an extremely simple process.
According to this configuration, it is possible to form a narrow gap between the vibrator and the electrode by exceeding a normal resolution limit by a simple method.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
(Embodiment 1)
FIG. 1 is a plan view of an electromechanical resonator according to a first embodiment of the present invention. FIG. 1A is a diagram showing a state immediately after processing, and FIG. 1B is a diagram showing a state in which the gap is changed due to relaxation of internal stress after processing. In FIG. 1, the hatched part is a fixed part fixed on the substrate, and the other part is a movable part. This electromechanical resonator is formed from a single silicon substrate by a MEMS process, and is stretched around a substrate 201 (omitted in FIG. 1; see FIG. 2D) with a double-supported beam structure. A vibration body 202 that vibrates, and an electrode 203 disposed at a predetermined interval with respect to the vibration body 202. The mechanical vibration of the vibration body 202 and the vibration accompanying the mechanical vibration. An electro-mechanical conversion is realized between an electrical change caused by a relative positional change between the body 202 and the electrode 203. After the vibrator 202 and the electrode 203 are processed by the MEMS process, the vibration body and the electrode By narrowing the gap g, a fine gap can be efficiently formed exceeding the processing limit. Here, the gap g is once processed to a minimum line width (several hundred nm to several μm) that can be manufactured by using a semiconductor manufacturing technique, and is narrowed after the processing.

  Here, the vibrating body 202 is a doubly-supported beam having both ends fixed on the substrate 201, and 203 is disposed in the vicinity of the vibrating body 202, and is an electrode for exciting the vibrating body or detecting the vibration of the vibrating body. It is. Here, the electrode 203 is supported by a positioning beam 211 having a tensile internal stress, and a gap g formed as shown in FIG. Thus, as shown in FIG. 1B, the gap g is narrowed and stabilized.

  The electrode 203 is disposed at the center of the positioning beam X211, both ends of the positioning beam X211 are connected to the two positioning beams Y212, and the other end point of the positioning beam Y212 is fixed to the substrate. A gap g is formed between the vibrating body 202 and the electrode 203.

  The positioning beams X211 and Y212 are both formed of a thin film pattern formed by using a semiconductor manufacturing technique, and are manufactured so that the residual internal stress in the substrate plane direction becomes a tensile stress.

  Next, a method for manufacturing the electromechanical resonator according to the first embodiment of the present invention will be described. 2 (a) to 2 (d) are manufacturing process diagrams showing the manufacturing method by enlarging the vicinity of the vibrating body 202 and the electrode 203 in the structure of the electromechanical resonator shown in FIG. The vibrating body 202 and the electrode 203 are formed on the substrate 201. For example, the substrate 201 is a high resistance silicon substrate having a silicon oxide film formed by thermal oxidation and a silicon nitride film formed by a low pressure CVD method deposited on the surface.

  First, as shown in FIG. 2A, a sacrificial layer made of a photoresist is spin-coated on a silicon substrate 201, exposed and developed by photolithography, and then baked on a hot plate to form a sacrificial layer 207.

Next, an aluminum thin film 208 is deposited on the entire surface of the substrate by sputtering (FIG. 2B).
Next, a photoresist is formed on the aluminum thin film 208, patterned by photolithography, and dry etching of aluminum is performed using the pattern made of the photoresist as a mask, thereby forming the vibrator 202 and the electrode 203 (FIG. 2). (C)). Further, the photoresist pattern and the sacrificial layer 207 are removed by oxygen plasma. As a result, the vibrating body 202 becomes a doubly supported beam that can vibrate, and forms a capacitor with the electrode 203 (FIG. 2D).

  By using this manufacturing method, the electromechanical resonator shown in FIG. 1A with two masks for patterning the sacrificial layer 207 and for patterning an aluminum structure using all the aluminum thin films shown in FIG. Can be realized.

  When the sacrificial layer removal step shown in FIG. 2D is completed in this way, the residual stress in the positioning beam X211 is alleviated, that is, the positioning beam X211 tries to shrink in the length direction, and the positioning beam X211 is positioned. The beam Y212 is pulled by the positioning beam X211 to relieve stress, and finally stops in a bent state as shown in FIG. As a result, the gap g between the vibrating body 202 and the electrode 203 changes to g ′, which is smaller than the initial gap g value.

  That is, in the present embodiment, the positioning mechanism is configured only by the positioning beam X211 and the positioning beam Y212. As a result, it is possible to form a narrow gap that is not limited to the minimum gap g that can be produced by the semiconductor manufacturing technique used.

  According to such a configuration, the drive source is the internal stress of the beam, and the deflection between the beam due to the relaxation of the internal stress is used to make the gap between the vibrating body and the electrode a narrow gap beyond the processing limit. Therefore, it is possible to realize a highly sensitive electromechanical resonator having a sufficiently large amplitude. Therefore, by using this electromechanical resonator, a filter having excellent electro-mechanical and mechanical-electrical conversion efficiency can be provided.

Although a high-resistance silicon substrate is used in this embodiment mode, a normal silicon substrate, a compound semiconductor substrate, or an insulating material substrate may be used.
Further, although a silicon oxide film and a silicon nitride film are formed as insulating films on the high resistance silicon substrate 201, the formation of these insulating films may be omitted if the resistance of the substrate is sufficiently high.

  In this embodiment, aluminum is used as a material for forming the vibrator and the electrode. However, other metal materials Mo, Ti, Au, Cu, and semiconductor materials into which impurities are introduced at a high concentration, such as amorphous silicon, poly Silicon, a conductive polymer material, or the like may be used. Further, although sputtering is used as a film forming method, it may be formed using a CVD method, a plating method, or the like.

  Note that a silicon nitride film may be deposited by plasma CVD on the entire surface of the structure formed of an aluminum thin film in the state of FIG.

  In the above embodiment, the resonance frequency of the structure including all of the positioning beams 211 and 212 and the electrode 203 is sufficiently separated on the frequency axis as compared with the resonance frequency of the vibration body 202. Although it is possible to suppress the vibration of the positioning beams 211 and 212 and the electrode 203 at the resonance frequency at which the body 202 should vibrate, when the electromechanical resonator according to the first embodiment of the present invention is reliably realized in the filter The filter input signal that does not have the resonance frequency of the structure other than the vibrating body 202 in the frequency band is used, or the frequency component generated by the resonance of the structure other than the vibrating body 202 is obtained from the output signal of the filter. What is necessary is just to suppress by the filter comprised with the electric circuit element.

(Embodiment 2)
In the first embodiment, the gap between the vibrating body 202 and the electrode 203 exceeds the processing limit due to contraction in the length direction due to the relaxation of the residual stress in the positioning beam X211 carrying the electrode 203 made of an aluminum thin film. However, in the present embodiment, the force that tries to extend the beam processed with compressible internal stress is converted into a force in the rotation direction, and the connecting beam 204 is rotated. Thus, the gap g is narrowed.

  FIG. 3 is a plan view of the electromechanical resonator according to the second embodiment of the present invention. FIG. 3A is a diagram showing a state immediately after processing, and FIG. 3B is a diagram showing a state in which the gap is changed due to relaxation of internal stress after processing. In FIG. 3, the hatched part is a fixed part fixed on the substrate, and the other part is a movable part.

  The manufacturing process is realized by using the MEMS process in the same manner as in the first embodiment, but immediately after the processing, as shown in FIG. 3A, that is, the substrate is rotated with respect to a substrate as a support base (not shown). An electrode 203 is formed at the tip of a connecting beam 204 having a cantilever structure supported by a fulcrum O serving as a center, and a vibrating body 202 is formed on the electrode 203 with a gap g therebetween. Here, in the vicinity of the fulcrum O, first and second compressible beams 211R1 and 211R2 are connected in a point-symmetric position.

  When a predetermined time elapses, as shown in FIG. 3B, the first and second compressible beams 211R1, 211R2 apply stresses F1, F2 to the connecting beam 204 in an attempt to extend, and the electrode 203 is It is displaced in a direction approaching the vibrating body 202. As a result, the gap g is changed to g ′, which is narrowed.

In this way, a fine gap exceeding the processing limit is formed.
The gap dimensional difference may be simulated and calculated in advance, and the design value may be obtained after formation.
Here, the vibrating body 202 is a cantilever so that it does not buckle due to its own compressive stress. However, the vibrating body 202 and the electrode 203 are made of different materials, so that both ends can be supported as in the first embodiment. It may be a beam structure.

(Embodiment 3)
In the first and second embodiments, the beam is formed in advance so as to have an internal stress, and thereafter, the gap g is narrowed by stress relaxation. However, in the present embodiment, FIG. As shown in a), the locking portion 221 that locks the free end 205S of the connecting beam 205 is processed in advance so as to be integrally formed in the MEMS process, and after processing, as shown in FIG. An external force F is applied, the free end 205S is locked to the locking portion 221, and the beam is displaced to a predetermined position. Accordingly, the electrode 203 can be brought close to the vibrating body 202, and the gap g is narrowed to g ′.
That is, the beam structure is shaped by the MEMS process as in the first and second embodiments, the probe having a sharp tip such as an AFM (Atomic Force Microscopy) probe is manipulated, and the beam 205 is pushed. It is held by a holding mechanism using the locking portion 221. As a result, the gap g is narrowed, and a previously designed distance g ′ can be obtained.

(Embodiment 4)
In the third embodiment, the probe is manipulated by applying an external force and the connecting beam 205 is pushed and held. However, as shown in FIG. 5, the driving beam 209 is used as the external force as shown in FIG. 205 may be displaced and held by a holding mechanism having a locking portion 221.

  In the above embodiment, one electrode 203 is arranged on the connecting beam 205. However, in this embodiment, the vibrators 202a and 202b and the electrodes 203a and 203b are arranged, and two pairs of vibrator electrodes are arranged. is doing.

After processing, a desired voltage V _drive is applied to the driving power source 209, the electrodes 203a and 203b are displaced by electrostatic force, and the connecting beam 205 is displaced until the distal end portion 205S is locked to the locking portion 221.
After the holding, the driving power source 209 is turned off. The driving power source 209 may be used as a DC bias power source that is superimposed on the AC signal vi.

(Embodiment 5)
In the first or second embodiment, the example in which the gap is narrowed by the relaxation of the internal stress after the processing has been described. However, in the present embodiment, the compression is performed as shown in FIGS. In the state where the electrode 203 is in contact with the substrate due to buckling due to stress, the electrode is brought close to the vibrating body using a piezo element. 6A is a top view showing a state in which the electrode is displaced toward the substrate by relaxation of compressive stress after processing, FIG. 6B is a cross-sectional view taken along line AA ′ of FIG. 6A, and FIG. FIG. 6B shows a state where FIG. 6B is displaced so that the electrode is brought close to the vibrating body by the vibration of the piezo element.

In the present embodiment, the shear piezo element 300 is attached to the back surface of the substrate 201, and the piezo element is vibrated in the X direction.
In this piezoelectric element, electrodes 302 and 303 are formed at both ends of a piezoelectric body 301 such as PZT, and a voltage is applied between these electrodes 302 and 303 by a power source 304 to narrow the gap g.

At this time, by applying a sawtooth voltage as shown in FIG. 6B, the substrate 201 moves slowly in the + X direction and rapidly moves in the −X direction. When the substrate 201 moves slowly in the + X direction, the substrate 201 and the electrode 203 move while in contact with each other. However, when the substrate 203 tries to return rapidly in the −X direction, the electrode returns rapidly due to its inertial force. Absent. As a result, only the electrode moves in the + X direction while the substrate and the electrode are in contact with each other. Finally, as shown in FIG. 6C, when the gap g is sufficiently narrowed, the shear piezo element 300 is removed.
In this way, a narrow gap electromechanical resonator is completed.

  At this time, since the vibrating body and the electrode have different heights in the Z direction, the electrostatic force between both the vibrating body and the electrode is concentrated toward the lower part of the side surface of the vibrating body. Therefore, since a moment about the torsional rotation center of the vibrating body acts, the structure is suitable for a torsional resonator.

  According to such a configuration, it is possible to realize a narrow gap between the vibrating body and the electrode by a simple method by bringing a part of the electrode into contact with the substrate, and excellent electrical-mechanical and mechanical-electrical conversion efficiency. Filters can be provided.

(Embodiment 6)
In the first or second embodiment, the example in which the gap is narrowed by relaxation of internal stress after processing has been described. However, in this embodiment, the initial gap is zero as shown in FIGS. Then, a thin layer called SAM (Self-assembled monolayer) is processed as a release material, and after processing, the SAM is peeled to form a narrow gap. 7 is a diagram showing a state during processing, FIG. 8 is a diagram showing a state after gap formation, and FIG. 9 is an explanatory diagram showing the principle of the present embodiment. 7B is a cross-sectional view taken along the line AA ′ in FIG. 7A, and FIG. 8B is a cross-sectional view taken along the line AA ′ in FIG.

  As shown in FIGS. 7A and 7B, a metal film constituting the spacer S is formed and patterned, and a recess R is filled with a resist R as a sacrificial layer. A polysilicon layer to be formed is formed and further patterned, and thereafter a gold thin film to be the electrode 203 is formed to fill a region without this pattern.

  Then, as shown in FIGS. 8A and 8B, the resist R as a sacrificial layer is removed. Thereby, the pattern of the electrode 203 made of a gold thin film is formed, and the vibrating body 202 and a part of the electrode 203 are released from the substrate 201. In this way, when the vibrating body 202 and a part of the electrode 203 are released from the substrate 201, the electrode 203 peels off from the contact interface with the vibrating body 202 in an attempt to shrink in a direction parallel to the substrate surface, that is, in the horizontal direction. In addition, a narrow gap g can be created.

  By using this configuration, it is possible to form a narrow gap of 100 nanometers or less exceeding the limit of gap processing accuracy by semiconductor manufacturing technology or the like.

In order to make this peeling easier, as shown in FIG. 9, a release agent layer 210 that facilitates peeling between the electrode and 203 may be formed around the vibrating body 202. For example, SAM (Self-assembled monolayer) can be used as a release agent having a thickness of several nanometers. For example, it is desirable that the surface of the vibrating body 202 is oxidized. This mold release can be realized by using a metal as the electrode 203 and a DTS (dodecyltrichlorosilane) film as the SAM.
In forming this SAM, a dip pen lithography method in which the SAM is formed in a region traced on the substrate with a pen with a SAM solution or a direct drawing method such as an ink jet method is used.

  The electromechanical resonator according to the present invention has an effect of simplifying the manufacturing process and providing a filter having excellent electro-mechanical and mechanical-electrical conversion efficiency, and is mounted on a portable wireless terminal. It is useful as a high frequency filter circuit integrated in The present invention can also be applied to medical and environmental applications such as spectrum analysis in the voice band and ultrasonic band, and mass analysis by mechanical resonance.

1 is a top view of an electromechanical resonator according to Embodiment 1 of the present invention. Manufacturing process diagram of electromechanical resonator according to Embodiment 1 of the present invention Top view of an electromechanical resonator according to Embodiment 2 of the present invention Top view of an electromechanical resonator according to Embodiment 3 of the present invention Top view of an electromechanical resonator according to Embodiment 4 of the present invention The figure which shows the electromechanical resonator in Embodiment 5 of this invention. Explanatory drawing of the manufacturing method of the electromechanical resonator in Embodiment 6 of this invention The figure which shows the electromechanical resonator in Embodiment 6 of this invention. Explanatory drawing at the time of using a mold release agent in the manufacturing method of the electromechanical resonator in Embodiment 6 of this invention Illustration of a filter using a conventional electromechanical resonator Explanatory drawing of the manufacturing method of the conventional electromechanical resonator

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 Vibrating body 102 Anchor 103 Substrate 104 Excitation electrode 105 Detection electrode 200 Positioning mechanism 201 Substrate 202 Vibrating body 203 Electrode 204 Connecting beam 205 Positioning beam 206 Positioning electrode 207 Sacrificial layer 208 Aluminum 210 Release agent layer 211 Positioning beam X
212 Beam Y for positioning
221 holding mechanism

Claims (14)

An electromechanical conversion comprising: a vibrating body that performs mechanical vibration; and an electrode disposed at a predetermined interval with respect to the vibrating body, wherein the vibrating body is capable of causing mechanical vibration. An electromechanical resonator that enables
An electromechanical resonator in which an initial position of the vibrating body or the electrode is displaced after processing. The electromechanical resonator according to claim 1,
The initial position of the vibrating body or the electrode is
An electromechanical resonator characterized in that a relative position between the vibrating body and the electrode is displaced by a positioning mechanism so as to form a narrower gap. The electromechanical resonator according to claim 2,
The positioning mechanism has a beam structure, and the driving source is stress accumulated in the beam at the time of manufacturing the beam, and the relative position between the vibrating body and the electrode is adjusted using the deflection of the beam due to stress relaxation. Electromechanical resonator. The electromechanical resonator according to claim 2,
The electromechanical resonator according to claim 1, wherein the positioning mechanism includes a driving source that generates a moving force for displacing the position of the vibrating body or the electrode. The electromechanical resonator according to claim 4,
The electromechanical resonator according to claim 1, wherein the driving source includes an electrode for generating an electrostatic force. An electromechanical resonator according to any one of claims 1 to 5,
A mechanical resonator in which the vibrating body and the electrode are manufactured on the same substrate using a semiconductor manufacturing technique. The electromechanical resonator according to any one of claims 2 to 6,
The positioning mechanism and the drive source are electromechanical resonators manufactured on the substrate using a semiconductor manufacturing technique. The electromechanical resonator according to any one of claims 2 to 7,
The position adjusting mechanism includes a beam structure, and displaces the vibrating body or the electrode by an amount smaller than the predetermined amount by displacing at least one beam of the beam structure by a predetermined amount by the driving source. And an electromechanical resonator configured to realize fine adjustment. The electromechanical resonator according to any one of claims 6 to 8,
The electromechanical resonator, wherein the positioning mechanism means includes a plurality of the beam structures. The electromechanical resonator according to any one of claims 1 to 9,
A mechanical resonator comprising a plurality of electromechanical resonators arranged in parallel electrically. The electromechanical resonator according to any one of claims 1 to 10,
The electromechanical resonator is housed in a case sealed so as to be in a vacuum atmosphere.   A filter comprising the electromechanical resonator according to claim 1.   An electrical circuit using the electromechanical resonator according to claim 1. An electromechanical conversion comprising: a vibrating body that performs mechanical vibration; and an electrode disposed at a predetermined interval with respect to the vibrating body, wherein the vibrating body is capable of causing mechanical vibration. A method of manufacturing an electromechanical resonator that enables
Forming a beam structure including the vibrating body and the electrode on a substrate; and
And a step of displacing the vibrating body or the electrode so that a distance between the vibrating body and the electrode becomes a desired value.

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