JP2006041406A - Laser heating equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a laser heating equipment stably outputting laser beam. <P>SOLUTION: The laser heating equipment acquires temperature characteristics of a watt-class one chip semiconductor laser using a temperature measurement circuit, based on the temperature of watt-class one chip semiconductor laser which is measured with a thermistor in advance. Based on the temperature characteristics, a current waveform adjusting means sets a first target drive current value I<SB>1</SB>, second target drive current value I<SB>2</SB>, first set time T<SB>1</SB>, and second set time T<SB>2</SB>, so that output drop of laser beam of the watt-class one chip semiconductor laser that follows temperature rising is compensated. So, the laser beam more stable than the watt-class one chip semiconductor laser is emitted. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a laser heating facility that condenses laser light emitted from, for example, a semiconductor laser and performs heat treatment such as soldering or welding with the collected laser light.

Conventionally, there is a laser heating facility as an apparatus for performing non-contact heat treatment using laser light, which is disclosed in Patent Document 1, for example.
This laser heating facility (laser heating device) includes a laser diode module in which a plurality of laser diodes are stacked, a power supply for supplying power to the laser diode module, and laser light emitted from the plurality of laser diodes included in the laser diode module. The collimating lens for collimation and the condensing lens for condensing the collimated laser beam are used.

With this configuration, the laser light emitted from the laser diode is collimated by the collimator lens, and the collimated laser light is collected by the condenser lens.
In this way, heat treatment such as soldering or welding can be performed on the object to be heated placed at the focal point by the focused laser beam.

In addition, a light emission amount correction circuit for correcting the amount of laser light emitted from the laser diode module is formed, and the current supplied to the laser diode module is increased in accordance with the decrease in the light emission amount accompanying the deterioration of the laser diode. The amount of emitted laser light is controlled to be constant. That is, a current generation circuit that generates a pulsed current to be supplied to the laser diode module is provided. As a light emission amount correction circuit, a photodetector that detects laser light emitted from the laser diode module, and a laser from the current generation circuit. A current amount detector for detecting the amount of current supplied to the diode module, a subtractor for subtracting the amount of current detected by the photodetector from the amount of current detected by the photodetector, and the output of the subtractor A ΔI / frequency conversion circuit (ΔI / F) that converts the value into a frequency, a voltage / frequency conversion circuit (V / F) that converts the voltage value of the heat profile that is output from the waveform storage device, and a voltage / The frequency (feedback value) output from the ΔI / frequency conversion circuit (ΔI / F) is subtracted from the frequency (target value) output from the frequency conversion circuit. And, a frequency subtracter for outputting to said current generating circuit.
JP 2002-9388 A

  However, according to the configuration of the above conventional laser heating equipment (laser heating device), the current supplied to the laser diode module is increased in accordance with the decrease in the light emission amount accompanying the deterioration of the laser diode, thereby reducing the light emission amount of the laser light. Although it is controlled to a constant value, the voltage value of the heat profile output from the waveform storage device is set in advance, so the amount of laser emission is adjusted in accordance with the actual amount of heat generated from the laser diode (temperature rise). There is a problem that the current supplied to the laser diode, which is constant, cannot be easily changed on site. In addition, the conventional light emission amount correction circuit is complicated, and there is a problem that the manufacturing cost of the apparatus becomes high.

  Therefore, the present invention can easily change the setting of the current supplied to the laser diode within the predetermined temperature in the field, so that the current supplied to the laser diode within the predetermined temperature can be compensated, and the manufacturing cost of the apparatus can be reduced. The purpose is to provide heating equipment.

  In order to achieve the above object, a laser heating apparatus according to claim 1 of the present invention includes a laser heating apparatus including a one-chip semiconductor laser light source that emits a laser beam for dissolving a substance around an optical axis center; A one-chip semiconductor laser light source power supply device provided with a current control circuit for controlling a drive current output to the one-chip semiconductor laser light source of the laser heating device, wherein the laser heating device and the one-chip semiconductor laser light source power supply device are for power A laser heating facility connected by a cable, wherein the laser heating device includes a heat sink provided with the one-chip semiconductor laser light source, and a temperature of the one-chip semiconductor laser light source closely or embedded in the heat sink. A temperature sensor for measuring, and the one-chip semiconductor laser light source power supply device includes the current control unit. Current waveform adjusting means for setting a target drive current value to be commanded to the circuit and a drive time; input a temperature of the one-chip semiconductor laser light source measured by the temperature sensor; and temperature characteristics of the one-chip semiconductor laser light source A temperature measurement circuit is provided for obtaining the target drive current value set by the current waveform adjusting means so as to correct the output fluctuation caused by the temperature fluctuation.

  The laser heating equipment according to claim 2 is the invention according to claim 1, wherein the current waveform adjusting means sets a first target drive current value to be output to the one-chip semiconductor laser light source. A current variable resistor; a second current variable resistor for setting a second target drive current value to be output to the one-chip semiconductor laser light source; and a drive time for outputting the first target drive current value. A first timer variable resistor for setting a set time; and a second timer variable resistor for setting a second set time, which is a drive time for outputting the second target drive current value, and the current control circuit. Outputs to the one-chip semiconductor laser light source based on the first target drive current value set by the current waveform adjusting means, the first set time, the second target drive current value, and the second set time. Drive current It is obtained by and controls.

  The laser heating facility according to claim 3 is the invention according to claim 1 or claim 2, wherein the one-chip semiconductor laser light source power supply device includes an L-type chassis, and the L-type chassis is replaced with another one. It is characterized in that it is attached to the frame and heat is dissipated.

  The laser heating apparatus according to claim 4 further includes a laser heating device including a one-chip semiconductor laser light source that emits a laser beam for dissolving a substance around an optical axis center, and a one-chip semiconductor laser light source of the laser heating device. A laser heating facility comprising a one-chip semiconductor laser light source power supply device provided with a current control circuit for controlling a drive current output to the laser heating device, wherein the laser heating device and the one-chip semiconductor laser light source power supply device are connected by a power cable. The laser heating device includes a polarizing prism disposed in front of the one-chip semiconductor laser light source and in a direction that linearly passes a laser polarization direction on the optical axis center, and on one side of the polarizing prism. Reflected light of laser light provided from the one-chip semiconductor laser light source provided and reflected by the polarizing prism A first optical sensor for detection; and a second optical sensor provided on the other side of the polarizing prism for detecting the return light of the laser beam, wherein the current control circuit is detected by the first optical sensor. The feedback value of the laser beam is obtained by subtracting the return beam of the laser beam detected by the reflected light and the second optical sensor, and a preset command value of the laser beam and a feedback value of the laser beam are set. Is characterized in that current control is performed so as to match.

  Moreover, the laser heating facility according to claim 5 is the invention according to claim 4, wherein the one-chip semiconductor laser light source power supply device includes display means for displaying the return light detected by the first optical sensor. It is characterized by having.

  The laser heating facility according to claim 6 is a laser heating device including a one-chip semiconductor laser light source that emits a laser beam for dissolving a substance around an optical axis center, and a one-chip semiconductor laser light source of the laser heating device. A laser heating facility comprising a one-chip semiconductor laser light source power supply device provided with a current control circuit for controlling a drive current output to the laser heating device, wherein the laser heating device and the one-chip semiconductor laser light source power supply device are connected by a power cable. The laser heating device is provided on the one side of the polarizing prism, and a polarizing prism disposed in front of the one-chip semiconductor laser light source and on the optical axis center in a direction that linearly passes the laser polarization direction. A visible light one-chip semiconductor laser light source, and the power cable is connected to the one-chip semiconductor laser. A first plus power supply line connecting a light source and the one-chip semiconductor laser light source power supply device; and a second plus power supply line connecting the visible light one-chip semiconductor laser light source and the one-chip semiconductor laser light source power supply device. The first plus power supply line and the second plus power supply line are respectively adjusted in linear and line length so as to supply a desired operating voltage to the one-chip semiconductor laser light source and the visible light one-chip semiconductor laser light source, The line resistance is formed to have a desired value.

  The laser heating facility of the present invention obtains the temperature characteristic of the one-chip semiconductor laser light source by the temperature measurement circuit based on the temperature of the one-chip semiconductor laser light source measured in advance by the temperature sensor, and based on this temperature characteristic, the current waveform The first target drive current value, the second target drive current value, the first set time, and the second set time are set by the adjusting means, and the first target drive current value is continuously set for the first set time by the current control circuit. By outputting the second target drive current value to the one-chip semiconductor laser light source for the second set time, it is possible to compensate for the decrease in the output of the laser light from the one-chip semiconductor laser light source due to the temperature rise. Since the target drive current and set time can be simply changed on site, stable laser light can be emitted from the one-chip semiconductor laser light source.

  Further, since it is not necessary to provide a complicated circuit for adjusting the voltage in the one-chip semiconductor laser light source power supply device, the manufacturing cost of the one-chip semiconductor laser light source power supply device in the laser heating facility can be greatly reduced.

(Embodiment 1)
Below, the laser heating equipment in Embodiment 1 of this invention is demonstrated, referring drawings. A direction in which laser light is emitted from the laser heating device is a forward direction, a direction opposite to the front direction is a rear direction, and a direction perpendicular to the front-rear direction X on the horizontal plane is a left-right direction Y. The vertical direction is Z.

FIG. 1 shows the configuration of the laser heating equipment in Embodiment 1 of the present invention.
As shown in FIGS. 1 (a) and 1 (b), a laser heating device 1 that emits a laser beam that dissolves a substance toward a laser beam condensing unit is an alumite-treated aluminum alloy (Al alloy). The holder 2 formed by the holder body 2A formed by the above and the holder cover 2B mounted on the upper part of the holder body 2A, and the heat conduction provided on the left and right side surfaces and the lower surface of the inner surface of the holder body 2A An insulating sheet 3, an indium sheet (hereinafter referred to as an In sheet) 4 provided on the lower surface of the holder cover 2B, and a heat sink (copper block) provided in contact with each of the heat conductive insulating sheet 3 and the In sheet 4 ), And a watt-class wafer having an emission portion 8 that is fixed to the front surface of the heat sink 5 by a fixing screw 6 and emits the laser beam L around the optical axis center 7. Laser light emitted from a chip semiconductor laser (LD) (an example of a one-chip semiconductor laser light source) 9 and an optical axis center 7 in front of the holder 2 and emitted from an emission portion 8 of the watt-class one-chip semiconductor laser 9 Connected to the heat sink 5 and the aspherical lens 10 for condensing L, the lens holding unit 11 that holds the aspherical lens 10, and is provided with a visible light cut filter 11 </ b> A at a position in front of the aspherical lens 10. A power cable 12 having a positive power line 12A, a first negative power line 12B connected to the heat sink 5, and a second negative power line 12C connected to the watt-class one-chip semiconductor laser 9, A thermistor (temperature) built in the heat sink 5 and measures the temperature of the watt-class one-chip semiconductor laser 9 An example of a sensor) 13A, a thermistor cable (an example of a temperature sensor cable) 13 connected to the thermistor 13A, and a photo for detecting the return light of the laser light L emitted from the watt-class one-chip semiconductor laser 9 A diode (light sensor) 14A, a photodiode cable 14 (an example of a light sensor cable) connected to the photodiode 14A, and a vertical direction Z are provided at each corner of the holder cover 2B. It is comprised from the attachment screw 16 etc. which are attached to the attachment board 15 grade | etc.,. The laser heating device 1 has a watt-class one-chip semiconductor laser power supply 21 (hereinafter referred to as an LD power supply) using a power cable 12 including the positive power supply line 12A, the first negative power supply line 12B, and the second negative power supply line 12C. ) (Details will be described later).

  When the cables 12, 13, and 14 are inserted into the holder 2, a black seal material 17 is provided at the insertion portion of the cables 12, 13, and 14 in the holder 2, and the cables 12, 13, and 14 are fixed. Has been.

  The emission part 8 formed in the watt-class one-chip semiconductor laser 9 has a light emission width in the slow direction of 0.5 mm and a light emission width in the fast direction of 1 μm. Note that the emission width in the slow direction at the emission portion 8 may be 0.05 mm to 0.5 mm. The aspherical lens 10 is an aspherical lens having F values F4 to F9 indicating the brightness of the lens and a lower numerical aperture NA of 0.3 or more.

Next, the configuration of the LD power supply device 21 that drives and controls the laser heating device 1 will be described.
As shown in FIGS. 2 and 3, the LD power supply device 21 includes an L-shaped chassis 22 formed of a side plate portion 22A and a bottom plate portion 22B, and a watt class provided on the bottom plate portion 22B via a support 23. A one-chip semiconductor laser substrate (hereinafter referred to as an LD substrate) 24 and a switching power source 26 provided in a cover 25 disposed so as to cover the LD substrate 24 are configured.

The LD substrate 24 includes a power connector 31 for inputting AC 100 V from the outside, a thermistor terminal block 32 connected to the thermistor cable 13, a photodiode cable 14, and a switch for turning on and off the target drive current I ( A switching block 35), a terminal block 33 to which the drive unit I is connected, an output terminal 34 for outputting a drive current I to the watt-class one-chip semiconductor laser 9 of the laser heating device 1, and a first output to the watt-class one-chip semiconductor laser 9. the second current setting a first current trimmer resistor (variable resistor for the first current) 38A for setting a target drive current I _1, the watt one-chip semiconductor second target drive current I ₂ to be output to the laser 9 First trimmer resistor (second current variable resistor) 38B and a first set time T ₁ which is a time for outputting the first target drive current I ₁ A timer trimmer resistor (variable resistor for the first timer) 39A, a second timer trimmer resistor (second variable timer to set a second set time T ₂ is a second target drive current time of outputting the I ₂ Resistor) 39B and the first switch 40A for starting and stopping the output of the target drive current I (first drive current I ₁ ) and the operation mode (for example, CW mode or PLS mode) of the LD power supply 21 are selected. And a dip switch 40 having a third switch 40C for selecting a maximum output current (3.3 A or 8 A). The first current trimmer resistor 38A, the second current trimmer resistor 38B, the first timer trimmer resistor 39A, and the second timer trimmer resistor 39B are driven to output to the watt class one-chip semiconductor laser 9. Current waveform adjusting means 41 for setting the current I is formed.

  Further, the temperature of the watt class one-chip semiconductor laser 9 measured (detected) by the thermistor 13A is input to the LD substrate 24, and a temperature measurement circuit 42 for obtaining the temperature characteristics of the watt class one-chip semiconductor laser 9, and a switch 35 and the current waveform adjusting means 41, and a current control circuit 43 that outputs the drive current I set by the current waveform adjusting means 41 is provided. For example, a temperature indicator (temperature display means) 44 is connected to the temperature measurement circuit 42 as means for displaying the temperature measured by the temperature measurement circuit 42.

The LD power supply device 21 is of a natural air cooling type that dissipates heat by attaching an L-shaped chassis 22 to another frame.
Hereinafter, the operation in the first embodiment will be described with reference to FIGS.

  First, the temperature of the watt class one-chip semiconductor laser 9 is measured in advance by the thermistor 13A, the temperature characteristic of the watt class one-chip semiconductor laser 9 is obtained by the temperature measurement circuit 42, and the measured temperature is displayed on the temperature display 44. Let

Here, in order to obtain a constant power for the laser light L output from the watt-class one-chip semiconductor laser 9, the temperature of the watt-class one-chip semiconductor laser 9 is 25 ° C., as shown by the solid line in FIG. When the drive current output from the substrate 24 is _IV , the slope of the graph indicating the relationship between the drive current I output from the LD substrate 24 and the temperature of the watt-class one-chip semiconductor laser 9 (hereinafter referred to as the slope of the graph). Needs to be θ ₁ .

Therefore, when the temperature rises due to the heat generated by the watt-class one-chip semiconductor laser 9, the temperature measurement circuit 42 causes the watt-class one-chip semiconductor laser 9 to rise as the temperature rises as shown by the one-dot chain line in FIG. Since the temperature characteristic of the temperature of the semiconductor laser 9 increasing and the slope of the graph becomes θ ₂ is obtained, the current waveform adjusting means 41 adjusts so that the slope of the graph becomes θ ₁ .

That is, when the temperature of the watt-class one-chip semiconductor laser 9 is increased by 10 ° C., the target drive current I is set to 5% to 7% after a predetermined time has elapsed in order to set the slope of the graph at the 25 ° C. point to θ _1. Since it is necessary to increase the degree, the current waveform adjusting means 41 adjusts so that the inclination of the graph becomes θ ₁ .

  Next, based on the temperature characteristics of the watt-class one-chip semiconductor laser 9, the target drive current I output from the output terminal 34 of the LD substrate 24 is set by the current waveform adjusting means 41 according to the following procedure.

1. The first target drive current value I ₁ output to the watt class one-chip semiconductor laser 9 is set within the first set time T ₁ by the first current trimmer resistor 38A.
2. The second target drive current value I ₂ output to the watt class one-chip semiconductor laser 9 is set within the second set time T ₂ by the second current trimmer resistor 38B.

3, the first timer trimmer resistor 39A, sets the length of the first set time _{T 1.}
4, the second timer trimmer resistor 39B, sets the length of the second set time _{T 2.}
5. Turn on the switch 35 or turn on (start) the first switch 40A of the dip switch 40.

When the first target drive current value I ₁ , the second target drive current value I ₂ , the first set time T ₁ , and the second set time T ₂ are set by the above procedure, the current control circuit 43 sets these set values. 4, the first target drive current I ₁ is output from the output terminal 34 of the LD substrate 24 to the watt class one-chip semiconductor laser 9 for the first set time T ₁ , as shown in FIG. After the set time T _{1 has} elapsed, during the second set time T ₂ , the second target drive current I ₂ is output from the output terminal 34 of the LD substrate 24 to the watt-class one-chip semiconductor laser 9 and the switch 35 is turned off. , or by the first switch 40A off of the dIP switch 40 (stop), or first set time T ₁ and the second set time T ₂ that has been set elapses, the output of the target drive current I is stopped . Incidentally, after the first set time T ₁ and the second set time T ₂ that has been set, or the first in the course of the set time T ₁ and the second set time T _2, is turned off once the switch 35, the switch again By turning on 35, the target drive current I is output again.

Thus, based on the temperature of the watt class one-chip semiconductor laser 9 measured in advance by the thermistor 13A, the temperature measurement circuit 42 obtains the temperature characteristic of the watt class one-chip semiconductor laser 9, and based on this temperature characteristic, the current A first target drive current value I ₁ , a second target drive current value I ₂ , a first set time T ₁ , and a second set time T ₂ are set by the waveform adjusting means 41, and the first target drive current is set by the current control circuit 43. during the I ₁ of the first set time, followed by between the second target drive current I ₂ of the second set time, by outputting to the watts one-chip semiconductor laser 9, watt one-chip semiconductor laser with increasing temperature 9 is compensated for by increasing the second target drive current value I ₂ .

As described above, according to the first embodiment, the temperature characteristic of the watt class one-chip semiconductor laser 9 is obtained by the temperature measurement circuit 42 based on the temperature of the watt class one-chip semiconductor laser 9 measured in advance by the thermistor 13A. Based on this temperature characteristic, the first target drive current value I ₁ , the second target drive current value I ₂ , the first set time T ₁ , and the second set time T ₂ are set by the current waveform adjusting means 41 to control the current. The circuit 43 outputs the first target drive current I ₁ to the watt-class one-chip semiconductor laser 9 for the first set time, and then outputs the second target drive current I ₂ to the watt-class one-chip semiconductor laser 9 for the second set time. simply setting between watt one chip can compensate for reduction in the output of the laser beam L of the semiconductor laser 9, also the respective target drive current I _1, I ₂ and the set time T _1, T ₂ in the field due to It is possible to change, it is possible to emit a stable laser beam L from the watt one-chip semiconductor laser 9.

  In addition, according to the first embodiment, since it is not necessary to provide a complicated circuit (APC circuit or the like) that performs voltage adjustment in the LD power supply device 21, the manufacturing cost of the LD power supply device 21 in the laser heating facility is significantly reduced. can do.

In addition, as in the first embodiment, when soldering a heated portion such as a flexible printed wiring board connector (FPC connector) or an electronic device, different first target drives are used for the two laser heating devices. It is also possible to set the current value I ₁ , the second target drive current value I ₂ , the first set time T ₁ , and the second set time T ₂ . With this configuration, a first targets set by the output from one laser heating device prior to the first target drive current value I ₁ after outputting the laser beam, on one of the laser heating apparatus from the other laser heating device By outputting the second target drive current value I ₂ with a delay from the drive current value I ₁ and outputting the laser beam, that is, the laser beam L is emitted from each laser heating device to the object to be processed at different timings. Thus, it is possible to perform soldering while performing alignment (position adjustment) using the residual heat effect.

In the first embodiment, the time (first time) during which the target drive current is output by the first current trimmer resistor 38A, the second current trimmer resistor 38B, the first timer trimmer resistor 39A, and the second timer trimmer resistor 39B. 1 set time T ₁ , second set time T ₂ ) and target drive current values (first target drive current value I ₁ , second target drive current value I ₂ ) are divided into two stages, but the current trimmer The time for outputting the target drive current and the value of the target drive current may be divided into two or more stages by adding resistors and timer trimmer resistors.

In the first embodiment, the In sheet 4 is provided on the lower surface of the holder cover 2B. However, a heat conductive insulating sheet may be used.
Further, in the first embodiment, the thermistor cable 13 connected to the thermistor 13A and the photodiode cable 14 connected to the photodiode 14A are used. However, as shown in FIG. A laser heating facility provided with a main body side connector 51 provided at the rear and a cable side connector 53 connected to the main body side connector 51 and provided at the tip of a connector cable 52 connected to the LD power supply device 21. There may be. In the laser heating apparatus 1, the photodiode 14 </ b> A is arranged so as to detect light in the same space S as the emission part 8 of the watt-class one-chip semiconductor laser 9.

  As shown in FIG. 7, the main body side connector 51 of the laser heating device 1 includes a first pin 51A connected to one end of the thermistor 13A, a second pin 51B connected to the other end of the thermistor 13A, A third pin 51C connected to one end of the photodiode 14A, a fourth pin 51D connected to the other end of the photodiode 14A and one end of the electromagnet 54A of the relay 54, and the other end of the electromagnet 54A of the relay 54 A fifth pin 51E is provided. The contact portion (NC) 54B of the relay 54 is connected to the watt-class one-chip semiconductor laser 9 and to the output terminal 34 of the LD substrate 24.

The first pin 51A and the second pin 51B are connected to the temperature measurement circuit 42 of the LD power supply device 21 via the connector cable 52, and the third pin 51C is the power of the LD power supply device 21 via the connector cable 52. The fourth pin 51D is connected to the ground 57 in the LD power supply device 21 via the connector cable 52, and the fifth pin 51E is connected to the power supply V of the LD power supply 21 via the connector cable 52. _It is connected to _CC 58. Further, the current control circuit 43 is provided with a comparison control unit 43A for comparing whether the final value of the laser power of the watt class one-chip semiconductor laser 9 measured by the photodiode 14A is within the set range.

Next, the operation of the laser heating facility will be described with reference to FIGS.
First, when the cable side connector 53 is not plugged into the main body side connector 51, the contact portion 54B of the relay 54 is short-circuited. When plugged in, the electromagnet 54A of the relay 54 operates to release the short circuit of the contact portion 54B, that is, open, so that the watt class one-chip semiconductor laser 9 can be protected from static electricity.

Then, as described above, the current waveform adjusting means 41 causes the laser power of the watt class one-chip semiconductor laser 9 (3 W at the first set time T _{1 and} 5 W at the second set time T ₂ ) as shown in FIG. set and outputs a power waveform a, 4.5 w next output is 10% down of the laser power in the second set time T ₂ of the power waveform B, then the laser power of the power waveform C to be output, watts As the semiconductor laser element of the class one-chip semiconductor laser 9 deteriorates, the laser power at the first set time T ₁ is reduced to 2.7 W by 10% at the first set time T ₁ and the second set time T ₂ , respectively. when the laser power in the second set time _{T 2} becomes 4.5 W, the power measurement circuit 56, the final value of the laser power of the power waveform C a (4.5 W), photo The measurement is performed by the diode 14A, and the final value is output to the comparison control unit 43A.

Here, the comparison control unit 43A, the final value is within the set range (e.g. 4.75W～5.25W, i.e. ± 5% of 5W set by the second set time _{T 2,} the setting range arbitrarily set and changed As shown in FIG. 9, if the final value is out of the setting range, that is, if an error is detected, the power waveform D that is output next is the power that is initially set. Power compensation is performed by the current control circuit 43 so that the laser power value of the waveform A is obtained. As shown in FIG. 9, the final value of the power waveform once measured is latched until the final value of the next power waveform is measured.

  As a result, power compensation can be performed on the power waveform output after the power waveform in which an error has been detected, so that laser light having a desired laser power can be emitted from the watt-class one-chip semiconductor laser 9. In addition, since the temperature compensation is still in an effective state, a current necessary for emitting the desired laser power is ensured even if the temperature fluctuates.

  In the above description, the final value of the laser power of the power waveform C is output to the comparison control unit 43A. However, the final value of the laser power of the power waveform B may be output to the comparison control unit 43A. That is, the final value of the power waveform in which an error has been detected may be output to the comparison control unit 43A. Alternatively, the final value of the power waveform after the error has been detected is output to the comparison control unit 43A. Also good.

In the above description, the final value of the power waveform is measured. However, an error may be detected by measuring any point in the current waveform.
(Embodiment 2)
Below, the laser heating equipment in Embodiment 2 of this invention is demonstrated, referring drawings.

  FIG. 10 shows the configuration of the laser heating facility in the second embodiment of the present invention. Note that the laser heating apparatus according to the second embodiment has substantially the same configuration as that of the first embodiment, and thus a detailed description thereof will be omitted and only the main part will be described.

As shown in FIG. 10, a laser heating device 61 that emits a laser beam that dissolves a substance toward the laser beam condensing unit (the polarization direction is the vertical direction) is an alumite-treated aluminum alloy (Al A watt-class one-chip semiconductor laser (LD) (one-chip semiconductor) having a holder 62 formed of an alloy and an emission portion 65 that is fixed to the front surface of the heat sink 63 and emits the laser light L around the optical axis center 64. An example of a laser light source) 66 and a watt-class one-chip semiconductor laser 66 arranged in front of the optical axis center 64 and condensing the laser light L emitted from the emitting portion 65 of the watt-class one-chip semiconductor laser 66. Aspherical lens 67 formed of BK7, etc., and a place that holds the aspherical lens 67 and is located in front of the aspherical lens 67 The lens holding part 68 having the visible light cut cover glass 68A, the watt-class one-chip semiconductor laser 66, and the aspherical lens 67 are arranged on the optical axis center 64 in a direction that linearly passes the laser polarization direction. A PBS prism (also referred to as a polarizing beam splitter) (an example of a polarizing prism) 69 and a left side (one side) of the PBS prism 69 in the front-rear direction, that is, a left side (one side) inside the holder 62 are provided. A first photodiode (first PD) (an example of a first optical sensor) 70A that detects the reflected light of the laser light L emitted from the one-chip semiconductor laser 66 reflected at the right side in the front-rear direction of the PBS prism 69 ( the other side), i.e. provided on the right side surface of the inner holder 62 (the other side), detects the Modohikari L _B of the laser beam L And a like second photodiode (second 2PD) (an example of a second optical sensor) 70B to be. The first photodiode 70A and the second photodiode 70B are provided to face each other with the PBS prism 69 interposed therebetween. The aspherical lens 67 and the visible light cut cover glass 68A are AR coated.

Also, one-chip semiconductor laser light source power supply (hereinafter, LD power supply hereinafter) 71, a Modohikari detection circuit 72 for detecting the Modohikari L _B of the detected laser light L by the second photodiode 70B, the second photo the laser light L reflected by Modohikari L _B and the first photodiode PBS prism 69 70A detects the diode 70B is detected, a current control circuit 73 for controlling a driving current for driving the laser heating apparatus 61 Yes. The laser heating device 61 and the LD power supply device 71 are connected by a power cable 79.

Further, the Modohikari detection circuit 72, 72A (an example of a display unit) Modohikari level indicator second photodiode 70B displays the power of Modohikari L _B detected is connected.
The current control circuit 73, the power _{P 2} (current Modohikari _{L B} of the laser beam L detected by the first power _{P 1} of the reflected light detected by the photodiode 70A and (current _{I 1)} second photodiode 70B I ₂ ) is subtracted to obtain a first difference P _F (current I _F ) which is a feedback value of the laser beam L, and a command power P _V (current I _V ) which is a preset command value of the laser beam L. And current control are performed so that the feedback value of the laser beam L matches.

More specifically, the current control circuit 73 determines that the second photodiode 70B is generated from the laser light L reflected by the PBS prism 69 detected by the first photodiode 70A, that is, the power P ₁ (current I ₁ ) of the reflected light. a first subtractor 74 for calculating a power _{P 2} of the detection to Modohikari _{L B} first difference _{P F} by subtracting the (current _{I 2)} (current _{I F),} the feedback value calculated by the first subtractor 74 The value of the first difference P _F (current I _F ) and the command power P _V (current I _V ) (an example of command value) (described later) set in the command unit 76 (described later) (unit) ), A function unit 75 that outputs the adjusted first difference P _F (current I _F ), a command unit 76 that outputs command power P _V (current I _V ), and an output from the command unit 76 Command power P _V (electric A second subtractor 77 for calculating a second difference P _R (current I _R ) by subtracting the first difference P _F (current I _F ), which is a feedback value of the emitted laser light, from the flow I _V ); The second difference P _R (current I _R ) is input, and the current control unit 78 performs current control so as to eliminate the second difference P _R (current I _R ). The current control unit 78 is connected to the watt-class one-chip semiconductor laser 66 via a plus power line 79 A in the power cable 79, and the ground 80 in the LD power supply 71 is connected to the power cable 79. The heat sink 63 is connected via a negative power supply line 79B.

Hereinafter, the operation in the second embodiment will be described with reference to FIG.
First, when the processing object X is not in the condensing part (processing point) M of the laser light L, the laser light L emitted from the emission part 65 of the watt class one-chip semiconductor laser 66 is polarized in the vertical direction Z. Therefore, 99% or more is transmitted through the PBS prism 69 and 1% or less is reflected by the PBS prism 69. The laser light L reflected by the PBS prism 69 is detected by the first photodiode 70A and input to the first subtracter 74. Since being subjected to AR coating to a non-spherical lens 67 and the visible light cut cover glass 68A as described above, not Modohikari L _B from these.

Here, the dirt such as soot aspherical lenses 67 and the visible light cut cover glass 68A is attached, Modohikari L _B lost polarization characteristic of reflection generated by these stains, some of the Modohikari L _B Is reflected by the PBS prism 69. The Modohikari L _B is detected in the second photo diode 70B, is input to the first subtracter 74 is input to Modohikari detection circuit 72, Modohikari level is displayed on Modohikari level indicator 73 .

Thus, since the return light level can be detected by the return light detection circuit 72, the degree of contamination of the aspheric lens 67 and the visible light cut cover glass 68A is determined.
As described above, the power P ₁ (for example, 0.05 W) (current I ₁ ) of the laser light L reflected by the PBS prism 69 detected by the first photodiode 70A and the return light detected by the second photodiode 70B. power _{P 2} (e.g., 0.01 W) (current _{I 2)} first subtractor 74 input the L _B, the power _{P 1} of the laser beam L reflected by the PBS prism 69 first photodiode 70A detects calculated (current _{I 1)} from the subtracted power _{P 2} (current _{I 2)} of Modohikari _{L B} of the second photodiode 70B detects the first difference _P F (0.04 W) (current _{I F),} The unit 75 is adjusted by the function unit 75 (4 W), and the unit-adjusted first difference P _F (4 W) (current I _F ) is output to the second subtractor 77.

Next, the second subtractor 77 to which the first difference P _F (4 W) (current I _F ) and the command power P _V (for example, 5 W) (current I _V ) output from the command unit 76 are input is a command. The first difference P _F (current I _F ) is subtracted from the command power P _V (current I _V ) output from the unit 76 to calculate a second difference P _R (1W) (current I _R ). Two differences P _R (current I _R ) are output to the current control unit 78.

Then, the second differential P _{R (current} I _R) current controller 78 inputs a performs current control (current compensation) to eliminate the second difference P _{R (current} I _R), which is the current compensation The current is output to the watt-class one-chip semiconductor laser 66 through the positive power supply line 79A of the power cable 79.

  In this manner, the current control circuit 73 performs current control of the drive current that drives the laser heating device 61, so that the laser light L emitted from the watt-class one-chip semiconductor laser 66 has a desired power.

  Further, when the processing object X is arranged at the condensing part (processing point) M of the laser beam L, the emission wavelength of the laser beam L emitted from the watt-class one-chip semiconductor laser 66 is transmitted through the PBS prism 69. The processing light and heat rays generated by the processing are almost cut by the aspheric lens 67 and the visible light cut cover glass 68A.

Here, Modohikari L _B in the collecting unit (working point) M have lost polarization characteristics, some of the Modohikari L _B is reflected by the PBS prism 69, the detection in the second photodiode 70B is, the object X is but likewise current compensation and not in the light collecting unit (working point) M of the laser beam L is performed, to remain a slight Modohikari L _B, processing a processing object X In this case, it is preferable to fix the current compensated current value and output the current to the watt-class one-chip semiconductor laser 66 when the processing object X is not in the condensing part (processing point) M of the laser light L. Good.

  As described above, according to the second embodiment, the current control circuit 73 controls the current of the drive current that drives the laser heating device 61, and the laser light L emitted from the watt-class one-chip semiconductor laser 66 is desired. Therefore, a stable laser beam L can be emitted from the watt-class one-chip semiconductor laser 66.

  Further, according to the second embodiment, since the return light level can be detected by the return light detection circuit 72, the degree of contamination of the aspheric lens 67 and the visible light cut cover glass 68A can be determined.

In the second embodiment, the PBS prism 69 is disposed between the watt-class one-chip semiconductor laser 66 and the aspherical lens 67, but a glass plate may be disposed. However, if you place the glass plate, the reflection loss of the glass plate is about 7%, Modohikari L _B to watt one-chip semiconductor laser 66 is be slightly more.

In the second embodiment, the first photodiode 70A for detecting the reflected light of the laser light L emitted from the one-chip semiconductor laser 66 reflected by the PBS prism 69 in the holder 62, and the return of the laser light L. the second photodiode 70B for detecting the light L _B are provided, may be provided by the first photodiode 70A. The first subtractor 74 is not able to subtract the power _{P 2} (current _{I 2)} of Modohikari _{L B} of the laser beam L, the first photodiode 70A is reflected by the PBS prism 69 for detecting Only the laser light L, that is, the power P ₁ (current I ₁ ) of the reflected light is output to the second subtractor 77 as the first difference P _F (current I _F ).
(Embodiment 3)
Below, the laser heating equipment in Embodiment 3 of this invention is demonstrated, referring drawings.

  The configuration of the laser heating equipment in Embodiment 3 of the present invention will be described with reference to FIG. Note that the laser heating apparatus according to the third embodiment has substantially the same configuration as that of the first embodiment, and therefore, detailed description thereof will be omitted and only the main part will be described.

  As shown in FIG. 11, a laser heating device 91 that emits a laser beam that dissolves a substance toward a laser beam condensing unit includes a holder 92 formed of an anodized aluminum alloy (Al alloy), A heat sink 93 in which the front part is cut into a cubic shape to form a projecting part 93A, and fixed in contact with the front surface of the heat sink 93 and the projecting part 93A, and emits laser light L around the optical axis center 94. A watt-class one-chip semiconductor laser (LD) (an example of a one-chip semiconductor laser light source) 96 having a light emitting portion 95 and an optical axis center 94 disposed in front of the holder 92; An aspherical lens 97 formed of BK7 or the like for condensing the laser light L emitted from the emission unit 95, and an aspherical lens 7 and a lens holding part 98 in which a visible light cut cover glass 98A is provided at a position located in front of the aspherical lens 97, and a photodiode (PD) embedded in the protruding part 93A of the heat sink 93 ( An example of an optical sensor) 99, a PBS prism (polarizing beam splitter) disposed between the watt-class one-chip semiconductor laser 96 and the aspherical lens 97 and provided in contact with the photodiode 99 (protruding portion 93A). (Also referred to as) (an example of a prism) 100 and a visible light watt class one-chip semiconductor laser (visible light LD) (visible light LD) provided on the side of the PBS prism 100 opposite to the side on which the photodiode 99 abuts. An example of a one-chip semiconductor laser light source) 101 and a substrate attached to one side of the heat sink 93 Star is constituted by such (temperature an example of a sensor) 102. The visible light LD 101 is fixed to the PBS prism 100 by UV adhesion after alignment adjustment. The laser heating device 91 includes a watt-class one-chip semiconductor laser power supply device 106 (hereinafter referred to as an LD power supply device) having a current control circuit 106A that controls a drive current output to the watt-class one-chip semiconductor laser 96 by the power cable 103. (Details will be described later).

  As shown in FIGS. 11 and 12, the watt-class one-chip semiconductor laser 96 is a one-chip semiconductor laser that supplies a drive current to the laser heating device 91 via the first plus power supply line 103A in the power cable 103. The visible light LD 101 is connected to the LD + of the LD power supply device 106 via the second plus power supply line 103B in the power cable 103 and is connected to the LD + of the LD power supply device 106 via the second minus power supply line 105. The LD− of the heat sink 93 is connected to the LD− of the LD power supply device 106 via the first negative power supply line 103 </ b> C in the power cable 103. The thermistor 102 is connected to a thermistor terminal of the LD power supply device 106 via a thermistor cable (an example of a temperature sensor cable) 104.

  The first positive power supply line 103A and the second positive power supply line 103B are respectively linear or linear in the positive power supply lines 103A and 103B so that a desired operating voltage is supplied to the watt class one-chip semiconductor laser 96 and the visible light LD 101, respectively. Are adjusted so that the line resistances 103D and 103E of the positive power supply lines 103A and 103B have a desired value of 0.1Ω. Note that the first negative power supply line 103C and the second negative power supply line 105 are formed of shield lines, and are regarded as having no line resistance.

Hereinafter, the operation in the third embodiment will be described with reference to FIG.
Usually, the output voltage of the LD power supply device 106 is 2.2V. The operation voltage required when watt one-chip semiconductor laser 96 to obtain a desired laser power (light output) _{P O} is 1.7V, operating current is 5A (5A~10A), visible light LD101 is desired the operating voltage required when obtaining a laser power (light output) _{P O} 2.2V, operating current is 0.03 a (number 10 mA).

Here, when the operating current 5A is supplied from the LD power supply device 106 to the watt-class one-chip semiconductor laser 96, the line resistance 103D of the first plus power supply line 103A is 0.1Ω, so that the voltage drop of 0.5V As shown by the solid line in FIG. 13, a voltage of 1.7 V is supplied to the watt class one-chip semiconductor laser 96, and a desired laser power _PO is output from the watt class one-chip semiconductor laser 96.

Further, when the operating current 0.03A is supplied from the LD power supply device 106 to the visible light LD101, the line resistance 103E of the second plus power supply line 103B is 0.1Ω, so that a voltage drop of 0.003V occurs. 13, a voltage of 2.197 V, that is, about 2.2 V is supplied to the visible light LD 101, and a desired laser power _PO is output from the visible light LD 101.

In this way, the positive power supply lines 103A and 103B are connected to the positive power supply lines 103A and 103B in the power cable 103 so that the desired operating voltage is supplied to the watt-class one-chip semiconductor laser 96 and the visible light LD 101, respectively. A desired laser power _PO is output from the watt-class one-chip semiconductor laser 96 and the visible light LD 101 by appropriately adjusting the linearity, the length of the line, and the like so that the line-to-line resistance has a desired value. Is done.

  As described above, according to the third embodiment, each of the positive power supply lines 103A and 103B has its linearity and line length adjusted in the power cable 103, respectively. Since the line resistance of the positive power supply lines 103A and 103B is formed to have a desired value, a desired operating voltage is supplied to the watt class one-chip semiconductor laser 96 and the visible light LD 101, respectively. Stable laser light can be emitted from the one-chip semiconductor laser 96 and the visible light LD 101.

Further, according to the third embodiment, since it is not necessary to provide a complicated circuit (APC circuit or the like) that performs voltage adjustment in the LD power supply device 106, the manufacturing cost of the LD power supply device 106 in the laser heating facility is greatly reduced. can do.
(Embodiment 4)
Below, the laser heating equipment in Embodiment 4 of this invention is demonstrated, referring drawings.

  The structure of the laser heating equipment in Embodiment 4 of this invention is demonstrated with FIG. Note that the laser heating apparatus according to the fourth embodiment is configured based on the first to third embodiments, and thus detailed description thereof will be omitted, and only a main part will be described. The same members as those in the first, second, and third embodiments are given the same numbers.

  As shown in FIG. 14, a laser heating device 111 that emits a laser beam L that dissolves a substance toward a condensing unit M of the laser beam L is configured based on the second embodiment. 2, the configuration of the heat sink 93, the watt class one-chip semiconductor laser 96, the PBS prism 100, the visible light LD 101, and the thermistor 102 in the third embodiment is provided instead of the configuration of the heat sink 63 and the watt class one-chip semiconductor laser 66 in FIG. Yes.

  With the above configuration, the temperature of the LD power supply device 112 for obtaining the temperature characteristics of the watt-class one-chip semiconductor laser 96 by inputting the temperature of the watt-class one-chip semiconductor laser 96 measured (detected) by the thermistor 102. A circuit 113 is provided, and a temperature indicator 114 is connected to the temperature measurement circuit 113 as a means for displaying the temperature measured by the temperature measurement circuit 113, for example. The temperature measurement circuit 113 is connected to the thermistor 102 by a thermistor cable 115.

  The command unit 76 includes a first current trimmer resistor (first current variable resistor) 121A, a second current trimmer resistor (second current variable resistor) 121B, and a first current trimmer resistor of the first embodiment. A first timer trimmer resistor (first timer variable resistor) 122A, a second timer trimmer resistor (second timer variable resistor) 122B, a first switch 123A, a second switch 123B, and a third switch 123C A dip switch 123 and a switch (switching unit) 124 are connected. The first current trimmer resistor 121A, the second current trimmer resistor 121B, the first timer trimmer resistor 122A, and the second timer trimmer resistor 122B are driven to output to the watt class one-chip semiconductor laser 96. Current waveform adjusting means 125 for setting the current I is formed.

  The current control circuit 73 is connected to the watt-class one-chip semiconductor laser 96 via the first plus power supply line 116A in the power cable 116 and via the second plus power supply line 116B in the power cable 116. The ground 117 in the LD power supply device 112 is connected to the LD− of the heat sink 93 through the negative power supply line 116 </ b> C in the power cable 116.

Hereinafter, the operation in the fourth embodiment will be described with reference to FIG.
First, as in the first embodiment, the temperature of the watt class one-chip semiconductor laser 96 is measured in advance by the thermistor 102, the temperature characteristic of the watt class one-chip semiconductor laser 96 is obtained by the temperature measurement circuit 113, and the temperature is displayed. The measured temperature is displayed on the instrument 114. Then, each drive current value is adjusted by the current waveform adjusting means 125 based on the temperature characteristics so that the laser beam L output from the watt-class one-chip semiconductor laser 96 can obtain a constant power.

Then, the first target drive current value I ₁ , the second target drive current value I ₂ , the first set time T ₁ , and the second set time T ₂ are set, and the switch 124 or the first switch 123A of the dip switch 123 is turned on. Then, during the first set time T ₁ from the command unit 76, the first target drive current I ₁ is sent to the current control unit 78 via the second subtractor 77 as the command power P _V (drive current I _V ). The second target drive current I ₂ is output as the command power P _V (drive current I _V ) via the second subtractor 77 during the second set time T ₂ after the first set time T _{1 has} elapsed. The current control unit 78 outputs a drive current corresponding to the command power P _V (drive current I _V ) to the watt class one-chip semiconductor laser 96. By turning off the switch 124 or the first switch 123A OFF (stop), or configured first set time _{T 1} and the second set time _{T 2} of the DIP switches 123, it passes also the command power _P V ( The output of the drive current I _V ) is stopped. Incidentally, after the first set time T ₁ and the second set time T ₂ that has been set, or the first in the course of the set time T ₁ and the second set time T _2, is turned off once the switch 124, the switch again By turning on 124, the command power P _V (drive current I _V ) is output again.

  At this time, when the processing object X is not in the condensing part (processing point) M of the laser light L, the laser light L emitted from the emission part 95 of the watt-class one-chip semiconductor laser 96 is polarized in the vertical direction Z. Therefore, 99% or more is transmitted through the PBS prism 100 and the PBS prism 69, and 1% or less is reflected by the PBS prism 69. The laser light L reflected by the PBS prism 69 is detected by the first photodiode 70A and input to the first subtracter 74.

Here, the dirt such as soot aspherical lenses 67 and the visible light cut cover glass 68A is attached, Modohikari L _B lost polarization characteristic of reflection generated by these stains, some of the Modohikari L _B Is reflected by the PBS prism 69. The Modohikari L _B is detected in the second photo diode 70B, is input to the first subtracter 74 is input to Modohikari detection circuit 72, Modohikari level is displayed on Modohikari level indicator 72A .

Thus, since the return light level can be detected by the return light detection circuit 72, the degree of contamination of the aspheric lens 67 and the visible light cut cover glass 68A is determined.
Further, the power P ₁ (for example, 0.05 W) (current I ₁ ) of the laser light L (reflected light) reflected by the PBS prism 69 detected by the first photodiode 70A and the return detected by the second photodiode 70B. first subtractor 74 input power _{P 2} of the light _{L B} (e.g. 0.01 W) (current _{I 2),} the power P of the laser light L reflected by the PBS prism 69 first photodiode 70A detects ₁ (current _{I 1)} from the subtracted power _{P 2} (current _{I 2)} of Modohikari _{L B} of the second photodiode 70B detects, first difference _P F is a feedback value of the laser light emitted (0 .04W) is calculated (current _{I F),} is the unit adjustment by the function unit 75 (4W), the first difference _P F which is the unit adjustment (4W) (current _{I F)} to the second subtractor 77 Forces.

Next, the second subtractor 77 to which the first difference P _F (current I _F ) (4 W) and the command power P _V (for example, 5 W) (drive current I _V ) output from the command unit 76 are input, Subtracting the first difference P _F (current I _F ) from the command power P _V (drive current I _V ) output from the command unit 76 to calculate a second difference P _R (1W) (current I _R ); The second difference P _R (current I _R ) is output to the current control unit 78.

Then, the second differential P _{R (current} I _R) current controller 78 inputs a performs current control (current compensation) to eliminate the second difference P _{R (current} I _R), which is the current compensation The current is output to the visible light LD 101 via the first plus power line 116A of the power cable 116 and the watt class one-chip semiconductor laser 96 and the second plus power line 116B.

  In addition, when the processing object X is arranged in the condensing part (processing point) M of the laser light L, current compensation is performed when the processing object X is not in the condensing part (processing point) M of the laser light L. It is better to fix the current value and output the current to the watt class one-chip semiconductor laser 96.

  In this way, the current control circuit 73 performs current control of the drive current that drives the laser heating device 111, so that the laser light L emitted from the watt-class one-chip semiconductor laser 96 has a desired power.

  Here, the current output to the watt class one-chip semiconductor laser 96 and the visible light LD 101 compensated for by the current control circuit 73 is a desired operating current for driving the watt class one-chip semiconductor laser 96 and the visible light LD 101. It has become.

Therefore, a desired operating voltage is supplied to the watt-class one-chip semiconductor laser 96 and the visible light LD 101 by adjusting the linearity, line length, and the like of each plus power supply line 116A, 116B in the power cable 116. Therefore, desired laser power _PO is output from the watt-class one-chip semiconductor laser 96 and the visible light LD 101.

As described above, according to the fourth embodiment, the temperature characteristic of the watt class one-chip semiconductor laser 96 is obtained by the temperature measurement circuit 113 based on the temperature of the watt class one-chip semiconductor laser 96 measured in advance by the thermistor 102. Based on this temperature characteristic, the first target drive current value I ₁ , the second target drive current value I ₂ , the first set time T ₁ , and the second set time T ₂ are set by the current waveform adjusting means 125, and the first The target drive current I ₁ is output to the watt class one-chip semiconductor laser 96 for the first set time, and then the second target drive current I ₂ is output to the watt class one-chip semiconductor laser 96 for the second set time. can compensate for reduction in the output of the laser beam L of the chip semiconductor laser 96, also be simply set change between the respective target drive current I _1, I ₂ and the set time T _1, T ₂ in situ It is possible, it is possible to emit stable laser beam L from the watt one-chip semiconductor laser 96.

  Further, according to the fourth embodiment, it is not necessary to provide a complicated circuit (APC circuit or the like) for adjusting the operating voltage for driving the laser heating device 111 in the LD power supply device 112, and therefore, the LD in the laser heating equipment. The manufacturing cost of the power supply device 112 can be significantly reduced.

  Further, according to the fourth embodiment, the current control circuit 73 performs current control of the drive current that drives the laser heating device 111, so that the laser light L emitted from the watt-class one-chip semiconductor laser 96 is desired. Therefore, a stable laser beam L can be emitted from the watt-class one-chip semiconductor laser 96.

  Further, according to the fourth embodiment, since the return light level can be detected by the return light detection circuit 72, the degree of contamination of the aspheric lens 67 and the visible light cut cover glass 68A can be determined.

  In addition, according to the fourth embodiment, the positive power supply lines 116A and 116B are adjusted in accordance with the linearity and line length of the positive power supply lines 116A and 116B in the power cable 116, respectively. Since the line-to-line resistance of the lines 116A and 116B is formed to have a desired value, a desired operating voltage is supplied to the watt-class one-chip semiconductor laser 96 and the visible light LD 101, respectively. Stable laser light L can be emitted from the semiconductor laser 96 and the visible light LD101.

It is a laser heating apparatus in Embodiment 1 of this invention, (a) is a top view, (b) is a side view. The same watt class one-chip semiconductor laser power source is shown, (a) is a plan view and (b) is a side view. It is a block diagram of the same watt class one-chip semiconductor laser power supply. It is a current waveform diagram of the current output from the same watt class one-chip semiconductor laser power supply. It is a graph which shows the relationship between the drive current and the temperature in a heat sink. It is a side view of the laser heating apparatus in the case of having the connector. It is a block diagram of the laser heating apparatus and LD power supply device in the case of having the connector. It is an electric power wave form diagram of the laser heating apparatus in the case of having the connector. It is a figure which shows the error detection of a laser heating apparatus in the case of having the same connector. It is the plane sectional view of the laser heating apparatus in Embodiment 2 of this invention, and LD power supply device. It is the plane sectional view of the laser heating apparatus in Embodiment 3 of this invention, and LD power supply device. It is a figure which shows the cable for electric power which connects the heat sink and LD power supply device. It is a graph which shows the relationship between the laser power and the operating voltage of the watt class one-chip semiconductor laser and visible light LD. It is the plane sectional view of the laser heating apparatus in Embodiment 4 of this invention, and LD power supply device.

Explanation of symbols

1, 61, 91 Laser heating device 7, 64, 94 Optical axis sensor 9, 66, 96 Watt class one-chip semiconductor laser (one-chip semiconductor laser)
-The light source)
13A thermistor (temperature sensor)
21, 71, 106 Watt-class one-chip semiconductor laser power supply (one-chip
Semiconductor laser light source power supply device)
22 L-type chassis 38A Trimmer resistor for first current (variable resistor for first current)
38B Trimmer resistor for second current (variable resistor for second current)
39A Trimmer resistor for first timer (variable resistor for first timer)
39B Trimmer resistor for second timer (variable resistor for second timer)
41 current waveform adjusting means 42 temperature measurement circuit 43 current control circuit 62 holder 67 aspherical lens 68 lens holding part 68A visible light cut cover glass 69 PBS prism 70A first photodiode (first optical sensor)
70B Second photodiode (second optical sensor)
71A Return light detection means 71B Current control means 93 Heat sink 93A Projection 99 Photodiode (light sensor)
100 PBS prism 101 visible light watt class one-chip semiconductor laser (visible light
Semiconductor laser light source)
103 power cable 103A first plus power line 103B second plus power line L laser light I drive current I ₁ first drive current I ₂ second drive current T ₁ first set time T ₂ second set time

Claims (6)

A laser heating device including a one-chip semiconductor laser light source that emits a laser beam that dissolves a substance around an optical axis center; and a current control circuit that controls a drive current output to the one-chip semiconductor laser light source of the laser heating device. A laser heating facility comprising a provided one-chip semiconductor laser light source power supply device, wherein the laser heating device and the one-chip semiconductor laser light source power supply device are connected by a power cable,
The laser heating device
A heat sink provided with the one-chip semiconductor laser light source;
A temperature sensor that is closely or embedded in the heat sink and measures the temperature of the one-chip semiconductor laser light source;
The one-chip semiconductor laser light source power supply device is
A current waveform adjusting means for setting a target drive current value and a drive time for instructing the current control circuit;
The temperature of the one-chip semiconductor laser light source measured by the temperature sensor is input, the temperature characteristic of the one-chip semiconductor laser light source is obtained, and the current waveform adjusting means is set to correct the output fluctuation due to the temperature fluctuation A laser heating facility comprising a temperature measurement circuit for obtaining the target drive current value. The current waveform adjusting means includes
A first current variable resistor for setting a first target drive current value to be output to the one-chip semiconductor laser light source;
A second current variable resistor for setting a second target drive current value to be output to the one-chip semiconductor laser light source;
A first timer variable resistor for setting a first set time which is a drive time for outputting the first target drive current value;
A second timer variable resistor for setting a second set time which is a drive time for outputting the second target drive current value;
The current control circuit includes the one-chip semiconductor laser based on the first target drive current value, the first set time, the second target drive current value, and the second set time set by the current waveform adjusting unit. 2. The laser heating equipment according to claim 1, wherein a driving current output to the light source is controlled. 3. The laser heating facility according to claim 1, wherein the one-chip semiconductor laser light source power supply device includes an L-shaped chassis, and the L-shaped chassis is attached to another frame to dissipate heat. . A laser heating device including a one-chip semiconductor laser light source that emits a laser beam that dissolves a substance around an optical axis center; and a current control circuit that controls a drive current output to the one-chip semiconductor laser light source of the laser heating device. A laser heating facility comprising a provided one-chip semiconductor laser light source power supply device, wherein the laser heating device and the one-chip semiconductor laser light source power supply device are connected by a power cable,
The laser heating device
A polarizing prism disposed in front of the one-chip semiconductor laser light source and in a direction that linearly passes a laser polarization direction on the optical axis center;
A first optical sensor that is provided on one side of the polarizing prism and detects reflected light of the laser light emitted from the one-chip semiconductor laser light source reflected by the polarizing prism;
A second optical sensor provided on the other side of the polarizing prism for detecting the return light of the laser beam;
The current control circuit obtains a feedback value of the laser light by subtracting the reflected light detected by the first optical sensor and the return light of the laser light detected by the second optical sensor, and is set in advance. A laser heating facility, wherein current control is performed so that a command value of the laser beam and a feedback value of the laser beam coincide with each other. The one-chip semiconductor laser light source power supply device is
The laser heating facility according to claim 4, further comprising display means for displaying the return light detected by the first optical sensor. A laser heating device including a one-chip semiconductor laser light source that emits a laser beam that dissolves a substance around an optical axis center; and a current control circuit that controls a drive current output to the one-chip semiconductor laser light source of the laser heating device. A laser heating facility comprising a provided one-chip semiconductor laser light source power supply device, wherein the laser heating device and the one-chip semiconductor laser light source power supply device are connected by a power cable,
The laser heating device
A polarizing prism disposed in front of the one-chip semiconductor laser light source and in a direction that linearly passes a laser polarization direction on the optical axis center;
A visible light one-chip semiconductor laser light source provided on one side of the polarizing prism;
The power cable connects a first plus power line connecting the one-chip semiconductor laser light source and the one-chip semiconductor laser light source power device, and connects the visible light one-chip semiconductor laser light source and the one-chip semiconductor laser light source power device. The first plus power line and the second plus power line supply a desired operating voltage to the one-chip semiconductor laser light source and the visible one-chip semiconductor laser light source, respectively. A laser heating facility, wherein the linear resistance and the line length are adjusted so that the resistance between the lines becomes a desired value.

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