JP2006041358A - Susceptor and chemical vapor phase deposition method - Google Patents

Susceptor and chemical vapor phase deposition method Download PDF

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JP2006041358A
JP2006041358A JP2004221792A JP2004221792A JP2006041358A JP 2006041358 A JP2006041358 A JP 2006041358A JP 2004221792 A JP2004221792 A JP 2004221792A JP 2004221792 A JP2004221792 A JP 2004221792A JP 2006041358 A JP2006041358 A JP 2006041358A
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substrate
susceptor
graphite member
sic
main surface
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JP4252944B2 (en
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Koichi Nishikawa
恒一 西川
Yusuke Maeyama
雄介 前山
Yusuke Fukuda
祐介 福田
Masaaki Shimizu
正章 清水
Hiroaki Iwaguro
弘明 岩黒
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Shindengen Electric Manufacturing Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a susceptor in which transferring of an SiC to the rear surface of a substrate is prevented and an SiC thin film of uniform composition is obtained, and to provide a chemical vapor phase deposition method. <P>SOLUTION: By combining a graphite member 2a coated with a TaC film 4a and a graphite member 2b coated with a SiC film 3a, an integrated susceptor is used. The outline profile of the graphite member 2a is, for example, a disk form, and its surface is coated with the TaC film 4a. The outline profile of the graphite member 2b is, for example, a ring form (a frame form), and its surface is coated with the SiC film 3a. With a substrate 1 arranged on the principal surface of the graphite member 2a, the principal surface of the graphite member 2a except the part coated with the substrate 1 is coated with the graphite member 2b. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、反応ガスの反応によって基板の表面に薄膜を形成する化学気相成長装置の内部に配置され、基板を支持するためのサセプタに関する。また、本発明は、このサセプタによって基板が支持された状態で基板の表面に薄膜を形成する化学気相成長方法にも関する。   The present invention relates to a susceptor that is disposed inside a chemical vapor deposition apparatus that forms a thin film on a surface of a substrate by reaction of a reaction gas and supports the substrate. The present invention also relates to a chemical vapor deposition method for forming a thin film on the surface of the substrate while the substrate is supported by the susceptor.

従来、半導体装置の製造において、高温に加熱された反応ガス同士の化学的な反応によって、半導体基板等の基板表面に薄膜を形成する化学気相成長（ＣＶＤ：Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ）を行うＣＶＤ装置が利用されている。ＣＶＤ装置内には、基板を支持するサセプタが配置されるが、パワーデバイス、高周波デバイス、高温動作デバイス等の材料として有望なＳｉＣの化学気相成長を行う場合には、高温に耐え得ることおよび高周波コイルを用いた誘導加熱に必要な電気伝導性を備えていることから、黒鉛（グラファイト）がサセプタの主原料として用いられる。   2. Description of the Related Art Conventionally, in the manufacture of semiconductor devices, there is a CVD apparatus that performs chemical vapor deposition (CVD) for forming a thin film on a substrate surface such as a semiconductor substrate by a chemical reaction between reaction gases heated to a high temperature. It's being used. In the CVD apparatus, a susceptor that supports the substrate is disposed. When performing chemical vapor deposition of SiC, which is a promising material for power devices, high-frequency devices, high-temperature operation devices, etc., it can withstand high temperatures and Since it has electrical conductivity necessary for induction heating using a high-frequency coil, graphite is used as the main raw material of the susceptor.

図３は従来のサセプタの構造を示す断面図である。サセプタの外形は円盤状であり、図３（ａ）〜（ｃ）はサセプタの主面に垂直な平面によるサセプタの切断面を示している。図３（ａ）は黒鉛部材２ｂからなるサセプタの構造を示している。このサセプタの主面に設けられた凹部に、ＳｉＣ基板等の基板１が載置される。しかし、サセプタに用いられる黒鉛は純粋な黒鉛ではなく、ボロンを含むので、基板１に形成される薄膜には、ボロンが不純物として取り込まれてしまう。これを防ぐため、黒鉛の表面をＳｉＣやＴａＣで被覆したサセプタを用いることが一般的となっている。   FIG. 3 is a sectional view showing the structure of a conventional susceptor. The outer shape of the susceptor is disk-shaped, and FIGS. 3A to 3C show a cut surface of the susceptor by a plane perpendicular to the main surface of the susceptor. FIG. 3A shows the structure of a susceptor made of the graphite member 2b. A substrate 1 such as a SiC substrate is placed in a recess provided in the main surface of the susceptor. However, since graphite used for the susceptor is not pure graphite but contains boron, boron is taken into the thin film formed on the substrate 1 as an impurity. In order to prevent this, it is common to use a susceptor in which the surface of graphite is coated with SiC or TaC.

図３（ｂ）においては、サセプタの黒鉛部材２ｂの表面がＳｉＣ被膜３ｃで被覆されている。この構造により、ボロンが不純物として取り込まれてしまう問題を解決することはできるが、基板１と対向するＳｉＣ被膜３ｃのＳｉＣが基板１の裏面に転写されてしまい、転写されたＳｉＣを除去するための工程が別途必要であるという問題点があった。また、このようにＳｉＣは高温でエッチングされたり蒸発したりするため、サセプタが劣化するという問題点があった。   In FIG.3 (b), the surface of the graphite member 2b of a susceptor is coat | covered with the SiC film 3c. Although this structure can solve the problem that boron is taken in as an impurity, the SiC of the SiC coating 3c facing the substrate 1 is transferred to the back surface of the substrate 1 to remove the transferred SiC. There was a problem that this process was required separately. In addition, since SiC is etched or evaporated at a high temperature as described above, there is a problem that the susceptor deteriorates.

図３（ｃ）においては、サセプタの黒鉛部材２ｂの表面がＴａＣ被膜４ｂで被覆されている。この構造により、ボロンが不純物として取り込まれてしまう問題、およびＳｉＣが基板１の裏面に転写されてしまう問題を解決することはできる。また、ＴａＣは高温でも劣化しない。しかし、ＴａＣによってサセプタを被覆した場合には、以下の問題点がある。ＳｉＣにおいて良好な化学量論組成のエピタキシャル膜を得るには、ＳｉＣ基板上でのＳｉ分圧とＣ分圧とを精密に制御する必要がある。各分圧は、反応ガス中の各分圧とＳｉＣ基板の各分圧との両方から決定される。この各分圧がＳｉＣ基板中央付近において良好な結晶成長を生じるように制御している。一方、サセプタの表面がＴａＣで被覆されていると、ＴａＣにおけるＳｉ分圧とＣ分圧はＳｉＣ基板における各分圧とは異なるので、ＳｉＣ基板の周辺部ではＴａＣ上の各分圧の影響を受けて良好な成長条件からずれてしまう。このずれは、大口径の基板になるほど顕著になる。   In FIG.3 (c), the surface of the graphite member 2b of a susceptor is coat | covered with the TaC film 4b. With this structure, the problem that boron is taken in as an impurity and the problem that SiC is transferred to the back surface of the substrate 1 can be solved. TaC does not deteriorate even at high temperatures. However, when the susceptor is coated with TaC, there are the following problems. In order to obtain an epitaxial film having a good stoichiometric composition in SiC, it is necessary to precisely control the Si partial pressure and the C partial pressure on the SiC substrate. Each partial pressure is determined from both each partial pressure in the reaction gas and each partial pressure of the SiC substrate. These partial pressures are controlled so that good crystal growth occurs near the center of the SiC substrate. On the other hand, if the surface of the susceptor is coated with TaC, the Si partial pressure and the C partial pressure in TaC are different from those in the SiC substrate. It will deviate from favorable growth conditions. This deviation becomes more prominent as the substrate has a larger diameter.

なお、特許文献１〜３には、従来のサセプタに関する記載がある。特許文献１にはサセプタの構造を改良し、成膜面間バラツキをできるだけ小さくすることが記載されている。特許文献２には、化学気相成長によりＳｉＣで被覆したサセプタが記載されている。特許文献３には、サセプタの構造を改良し、Ｓｉ基板上にＧａＡｓ薄膜を成長させる際の基板の汚染を防止することが記載されている。
特開平１１−１１１７０７号公報 特開平１０−１６７８８６号公報 特開平６−１０４１９３号公報 In addition, Patent Documents 1 to 3 have descriptions related to conventional susceptors. Patent Document 1 describes that the structure of the susceptor is improved to reduce the variation between the film formation surfaces as much as possible. Patent Document 2 describes a susceptor coated with SiC by chemical vapor deposition. Patent Document 3 describes that the structure of the susceptor is improved and contamination of the substrate when a GaAs thin film is grown on the Si substrate is prevented.
Japanese Patent Laid-Open No. 11-11707 Japanese Patent Laid-Open No. 10-167886 JP-A-6-104193

本発明は、上述した問題点に鑑みてなされたものであって、基板裏面へのＳｉＣの転写を防止すると共に、均一な組成のＳｉＣ薄膜を得ることができるサセプタおよび化学気相成長方法を提供することを目的とする。   The present invention has been made in view of the above-described problems, and provides a susceptor and a chemical vapor deposition method capable of preventing the transfer of SiC to the back surface of a substrate and obtaining a SiC thin film having a uniform composition. The purpose is to do.

本発明は上記の課題を解決するためになされたもので、請求項１に記載の発明は、反応ガスの反応によって基板の表面に薄膜を形成する化学気相成長に用いられ、前記基板を支持するサセプタにおいて、前記基板を載置可能な主面を有し、ＴａＣ膜で被覆された第1の黒鉛部材と、前記基板が前記第１の黒鉛部材の前記主面上に載置された状態において、前記基板によって被覆された部分を除く前記主面を被覆するための、ＳｉＣ膜で被覆された第２の黒鉛部材とを具備することを特徴とするサセプタである。   The present invention has been made to solve the above problems, and the invention according to claim 1 is used for chemical vapor deposition in which a thin film is formed on the surface of a substrate by reaction of a reactive gas, and supports the substrate. A first graphite member having a main surface on which the substrate can be placed and coated with a TaC film; and the substrate placed on the main surface of the first graphite member And a second graphite member covered with a SiC film for covering the main surface excluding a portion covered with the substrate.

請求項２に記載の発明は、反応ガスの反応によって基板の表面に薄膜を形成する化学気相成長に用いられ、前記基板を支持するサセプタにおいて、前記基板を載置可能な主面を有するＴａＣ部材と、前記基板が前記ＴａＣ部材の前記主面上に載置された状態において、前記基板によって被覆された部分を除く前記主面を被覆するための、ＳｉＣ膜で被覆された黒鉛部材とを具備することを特徴とするサセプタである。   The invention according to claim 2 is used for chemical vapor deposition in which a thin film is formed on the surface of a substrate by reaction of a reactive gas, and a TaC having a main surface on which the substrate can be placed in a susceptor that supports the substrate. And a graphite member coated with a SiC film for covering the main surface excluding a portion covered with the substrate in a state where the substrate is placed on the main surface of the TaC member. A susceptor is provided.

請求項３に記載の発明は、反応ガスの反応によって基板の表面に薄膜を形成する化学気相成長方法において、ＴａＣ膜で被覆された第1の黒鉛部材の主面上に前記基板を載置し、前記基板が前記第１の黒鉛部材の前記主面上に載置された状態において、前記基板によって被覆された部分を除く前記主面を、ＳｉＣ膜で被覆された第２の黒鉛部材で被覆し、前記反応ガスの反応によって前記基板の表面にＳｉＣ膜を形成することを特徴とする化学気相成長方法である。   According to a third aspect of the present invention, in the chemical vapor deposition method in which a thin film is formed on the surface of a substrate by reaction of a reactive gas, the substrate is placed on the main surface of the first graphite member covered with a TaC film. In the state where the substrate is placed on the main surface of the first graphite member, the main surface excluding the portion covered with the substrate is a second graphite member covered with a SiC film. The chemical vapor deposition method is characterized in that an SiC film is formed on the surface of the substrate by coating and reaction of the reaction gas.

請求項４に記載の発明は、反応ガスの反応によって基板の表面に薄膜を形成する化学気相成長方法において、ＴａＣ部材の主面上に前記基板を載置し、前記基板が前記ＴａＣ部材の前記主面上に載置された状態において、前記基板によって被覆された部分を除く前記主面を、ＳｉＣ膜で被覆された黒鉛部材で被覆し、前記反応ガスの反応によって前記基板の表面にＳｉＣ膜を形成することを特徴とする化学気相成長方法である。   According to a fourth aspect of the present invention, in the chemical vapor deposition method in which a thin film is formed on the surface of a substrate by reaction of a reactive gas, the substrate is placed on a main surface of a TaC member, and the substrate is formed of the TaC member. In the state of being placed on the main surface, the main surface excluding the portion covered with the substrate is coated with a graphite member coated with a SiC film, and the surface of the substrate is reacted with SiC by the reaction of the reaction gas. A chemical vapor deposition method characterized by forming a film.

本発明によれば、基板を載置可能な主面を有し、ＴａＣ膜で被覆された第１の黒鉛部材と、第１の黒鉛部材上に基板が載置された状態で、基板によって被覆された部分を除く主面を被覆するための、ＳｉＣ膜で被覆された第２の黒鉛部材とを組み合わせてサセプタを構成したので、基板裏面へのＳｉＣの転写を防止すると共に、均一な組成のＳｉＣ薄膜を得ることができるという効果が得られる。   According to the present invention, a first graphite member having a main surface on which a substrate can be placed and coated with a TaC film, and a substrate placed on the first graphite member, is covered with the substrate. Since the susceptor is configured by combining with the second graphite member coated with the SiC film for covering the main surface excluding the formed portion, the transfer of SiC to the back surface of the substrate is prevented and the uniform composition is achieved. The effect that a SiC thin film can be obtained is acquired.

以下、図面を参照し、本発明を実施するための最良の形態について説明する。図１は、本発明の第１の実施形態によるサセプタの構造を示す断面図である。このサセプタは、ＴａＣ被膜４ａによって被覆された黒鉛部材２ａと、ＳｉＣ被膜３ａによって被覆された黒鉛部材２ｂとを組み合わせ、一体化したものである。黒鉛部材２ａの外形形状は、例えば円盤状であり、その表面はＴａＣ被膜４ａによって被覆されている。   The best mode for carrying out the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing the structure of a susceptor according to a first embodiment of the present invention. This susceptor is a combination of a graphite member 2a coated with a TaC coating 4a and a graphite member 2b coated with a SiC coating 3a. The outer shape of the graphite member 2a is, for example, a disk shape, and the surface thereof is covered with a TaC coating 4a.

黒鉛部材２ａは、ＴａＣ被膜４ａによって被覆された一方の主面上に基板１が載置可能なように構成されている。黒鉛部材２ｂの外形形状は、例えばリング状（枠状）であり、その表面はＳｉＣ被膜３ａによって被覆されている。基板１の表面にＳｉＣの薄膜を形成する場合には、Ｈ２，ＳｉＨ４，Ｃ３Ｈ８等の反応ガスを反応室内に導入し、反応室を加熱して反応ガスの反応によってＳｉＣの薄膜を基板１の表面に成長させる。 The graphite member 2a is configured such that the substrate 1 can be placed on one main surface covered with the TaC coating 4a. The outer shape of the graphite member 2b is, for example, a ring shape (frame shape), and the surface thereof is covered with the SiC coating 3a. When a SiC thin film is formed on the surface of the substrate 1, a reaction gas such as H 2 , SiH 4 , C 3 H 8 or the like is introduced into the reaction chamber, and the reaction chamber is heated to react with the reaction gas to form a SiC thin film. Is grown on the surface of the substrate 1.

図１に示されるサセプタにおいては、黒鉛部材２ａがＴａＣ被膜４ａによって被覆され、黒鉛部材２ｂがＳｉＣ被膜３ａによって被覆されているので、黒鉛部材２ａおよび２ｂ中に含まれるボロンが不純物として基板１に取り込まれてしまうことを防止することができる。また、基板１が載置される黒鉛部材２ａがＴａＣ被膜４ａによって被覆されているので、基板１の裏面にＳｉＣが転写される従来の問題は発生しない。   In the susceptor shown in FIG. 1, since the graphite member 2a is covered with the TaC coating 4a and the graphite member 2b is covered with the SiC coating 3a, boron contained in the graphite members 2a and 2b is added to the substrate 1 as an impurity. It can prevent being taken in. Further, since the graphite member 2a on which the substrate 1 is placed is covered with the TaC coating 4a, the conventional problem of transferring SiC to the back surface of the substrate 1 does not occur.

また、基板１が黒鉛部材２ａの主面上に配置された状態において、基板１によって被覆された部分を除く黒鉛部材２ａの主面を、ＳｉＣ被膜３ａによって被覆された黒鉛部材２ｂが被覆するように構成されている。これにより、基板１の近傍においてＴａＣは露出していないため、基板１上の反応ガス中で反応に寄与する分のＳｉ分圧とＣ分圧とが基板中央における各分圧と等しくなり、均一な組成のＳｉＣ薄膜を得ることができる。   Further, in a state where the substrate 1 is disposed on the main surface of the graphite member 2a, the graphite member 2b covered with the SiC coating 3a covers the main surface of the graphite member 2a excluding the portion covered with the substrate 1. It is configured. Thereby, since TaC is not exposed in the vicinity of the substrate 1, the Si partial pressure and the C partial pressure that contribute to the reaction in the reaction gas on the substrate 1 are equal to each partial pressure in the center of the substrate, and are uniform. An SiC thin film having a proper composition can be obtained.

図２は、本発明の第２の実施形態によるサセプタの構造を示す断面図である。このサセプタにおいては、表面がＳｉＣ被膜３ｂによって被覆された黒鉛部材２ｃに突出部を設け、この突出部が基板１の周縁部を覆い、黒鉛部材２ａと黒鉛部材２ｃとが基板１を挟み込むような構造となっている。この構造により、基板１が載置された黒鉛部材２ａの主面が下向きとなるようにサセプタをＣＶＤ装置の反応室内に配置することができる。ＣＶＤ装置の反応室内に導入された反応ガスは、加熱によって上昇しやすくなるので、薄膜が形成される基板１の主面を下向きとすることにより、成膜速度を上げることができる。したがって、成膜時間の短縮化を図ることができると共に、使用される反応ガスの量が削減されるので、コストの低減を図ることもできる。   FIG. 2 is a sectional view showing a structure of a susceptor according to the second embodiment of the present invention. In this susceptor, a protrusion is provided on the graphite member 2c whose surface is covered with the SiC coating 3b, the protrusion covers the peripheral edge of the substrate 1, and the graphite member 2a and the graphite member 2c sandwich the substrate 1. It has a structure. With this structure, the susceptor can be disposed in the reaction chamber of the CVD apparatus so that the main surface of the graphite member 2a on which the substrate 1 is placed faces downward. Since the reaction gas introduced into the reaction chamber of the CVD apparatus is likely to rise by heating, the deposition rate can be increased by making the main surface of the substrate 1 on which the thin film is formed face downward. Accordingly, the film formation time can be shortened, and the amount of reaction gas used can be reduced, so that the cost can be reduced.

なお、上述した第１および第２の実施形態において、ＴａＣ膜によって被覆された黒鉛部材２ａに替えて、ＴａＣ板（ＴａＣ部材）を用いてもよい。これにより、黒鉛部材２ａをＴａＣ膜で被膜するよりもコストを低減することができる。   In the first and second embodiments described above, a TaC plate (TaC member) may be used instead of the graphite member 2a covered with the TaC film. Thereby, cost can be reduced rather than coat | covering the graphite member 2a with a TaC film | membrane.

以上、図面を参照して本発明の実施形態について詳述してきたが、具体的な構成はこれらの実施の形態に限られるものではなく、この発明の要旨を逸脱しない範囲の設計変更等も含まれる。   As described above, the embodiments of the present invention have been described in detail with reference to the drawings, but the specific configuration is not limited to these embodiments, and includes design changes and the like within a scope not departing from the gist of the present invention. It is.

本発明の第１の実施形態によるサセプタの構造を示す断面図である。It is sectional drawing which shows the structure of the susceptor by the 1st Embodiment of this invention. 本発明の第２の実施形態によるサセプタの構造を示す断面図である。It is sectional drawing which shows the structure of the susceptor by the 2nd Embodiment of this invention. 従来のサセプタの構造を示す断面図である。It is sectional drawing which shows the structure of the conventional susceptor.

符号の説明Explanation of symbols

１・・・基板、２ａ，２ｂ，２ｃ・・・黒鉛部材、３ａ，３ｂ，３ｃ・・・ＳｉＣ被膜、４ａ，４ｂ・・・ＴａＣ被膜。

DESCRIPTION OF SYMBOLS 1 ... Board | substrate, 2a, 2b, 2c ... Graphite member, 3a, 3b, 3c ... SiC film, 4a, 4b ... TaC film.

Claims (4)

反応ガスの反応によって基板の表面に薄膜を形成する化学気相成長に用いられ、前記基板を支持するサセプタにおいて、
前記基板を載置可能な主面を有し、ＴａＣ膜で被覆された第1の黒鉛部材と、
前記基板が前記第１の黒鉛部材の前記主面上に載置された状態において、前記基板によって被覆された部分を除く前記主面を被覆するための、ＳｉＣ膜で被覆された第２の黒鉛部材と、
を具備することを特徴とするサセプタ。 In the susceptor used for chemical vapor deposition for forming a thin film on the surface of the substrate by reaction of the reaction gas, and supporting the substrate,
A first graphite member having a main surface on which the substrate can be placed and coated with a TaC film;
In a state where the substrate is placed on the main surface of the first graphite member, a second graphite coated with a SiC film for covering the main surface excluding a portion covered with the substrate. Members,
A susceptor comprising: 反応ガスの反応によって基板の表面に薄膜を形成する化学気相成長に用いられ、前記基板を支持するサセプタにおいて、
前記基板を載置可能な主面を有するＴａＣ部材と、
前記基板が前記ＴａＣ部材の前記主面上に載置された状態において、前記基板によって被覆された部分を除く前記主面を被覆するための、ＳｉＣ膜で被覆された黒鉛部材と、
を具備することを特徴とするサセプタ。 In the susceptor used for chemical vapor deposition for forming a thin film on the surface of the substrate by reaction of the reaction gas, and supporting the substrate,
A TaC member having a main surface on which the substrate can be placed;
In a state where the substrate is placed on the main surface of the TaC member, a graphite member coated with a SiC film for covering the main surface excluding a portion covered with the substrate;
A susceptor comprising: 反応ガスの反応によって基板の表面に薄膜を形成する化学気相成長方法において、
ＴａＣ膜で被覆された第1の黒鉛部材の主面上に前記基板を載置し、
前記基板が前記第１の黒鉛部材の前記主面上に載置された状態において、前記基板によって被覆された部分を除く前記主面を、ＳｉＣ膜で被覆された第２の黒鉛部材で被覆し、
前記反応ガスの反応によって前記基板の表面にＳｉＣ膜を形成する
ことを特徴とする化学気相成長方法。 In a chemical vapor deposition method in which a thin film is formed on the surface of a substrate by reaction of a reactive gas,
Placing the substrate on the main surface of the first graphite member coated with the TaC film;
In the state where the substrate is placed on the main surface of the first graphite member, the main surface excluding a portion covered with the substrate is covered with a second graphite member covered with a SiC film. ,
A chemical vapor deposition method, wherein a SiC film is formed on a surface of the substrate by reaction of the reaction gas. 反応ガスの反応によって基板の表面に薄膜を形成する化学気相成長方法において、
ＴａＣ部材の主面上に前記基板を載置し、
前記基板が前記ＴａＣ部材の前記主面上に載置された状態において、前記基板によって被覆された部分を除く前記主面を、ＳｉＣ膜で被覆された黒鉛部材で被覆し、
前記反応ガスの反応によって前記基板の表面にＳｉＣ膜を形成する
ことを特徴とする化学気相成長方法。

In a chemical vapor deposition method in which a thin film is formed on the surface of a substrate by reaction of a reactive gas,
Placing the substrate on the main surface of the TaC member;
In the state where the substrate is placed on the main surface of the TaC member, the main surface excluding a portion covered with the substrate is covered with a graphite member covered with a SiC film,
A chemical vapor deposition method, wherein a SiC film is formed on a surface of the substrate by reaction of the reaction gas.

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JP5321980B2 (en) * 2007-11-08 2013-10-23 株式会社Sumco Vapor growth susceptor
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EP3162913A4 (en) * 2014-06-24 2018-01-17 Toyo Tanso Co., Ltd. Susceptor and method for manufacturing same
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Cited By (11)

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Publication number Priority date Publication date Assignee Title
JP5321980B2 (en) * 2007-11-08 2013-10-23 株式会社Sumco Vapor growth susceptor
JP2009190916A (en) * 2008-02-13 2009-08-27 Sumitomo Electric Ind Ltd SiC SUBSTRATE AND VAPOR PHASE DEPOSITION METHOD OF SiC SUBSTRATE
JP2013254853A (en) * 2012-06-07 2013-12-19 Mitsubishi Electric Corp Substrate support medium and semiconductor manufacturing apparatus
US9824911B2 (en) 2012-06-07 2017-11-21 Mitsubishi Electric Corporation Substrate support and semiconductor manufacturing apparatus
WO2014123036A1 (en) * 2013-02-06 2014-08-14 東洋炭素株式会社 Silicon carbide-tantalum carbide composite and susceptor
US9764992B2 (en) 2013-02-06 2017-09-19 Toyo Tanso Co., Ltd. Silicon carbide-tantalum carbide composite and susceptor
JP2015146416A (en) * 2014-01-06 2015-08-13 住友電気工業株式会社 Silicon carbide substrate support member, member for silicon carbide growth device and silicon carbide epitaxial substrate manufacturing method
EP3162913A4 (en) * 2014-06-24 2018-01-17 Toyo Tanso Co., Ltd. Susceptor and method for manufacturing same
US10522386B2 (en) 2014-06-24 2019-12-31 Toyo Tanso Co., Ltd. Susceptor and method for manufacturing same
JP2022534777A (en) * 2019-05-27 2022-08-03 シュンク サイカーブ テクノロジー ビー． ブイ． chemical vapor deposition chamber article
JP7459137B2 (en) 2019-05-27 2024-04-01 シュンク サイカーブ テクノロジー ビー． ブイ． Chemical vapor deposition chamber article

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