JP2006016229A5 - - Google Patents
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- JP2006016229A5 JP2006016229A5 JP2004194047A JP2004194047A JP2006016229A5 JP 2006016229 A5 JP2006016229 A5 JP 2006016229A5 JP 2004194047 A JP2004194047 A JP 2004194047A JP 2004194047 A JP2004194047 A JP 2004194047A JP 2006016229 A5 JP2006016229 A5 JP 2006016229A5
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Description
本発明の更に別の側面としての露光装置は、紫外光、遠紫外光及び真空紫外光を露光光として利用し、当該露光光を上述の光学素子を含む光学系を介して当該被処理体を露光することを特徴とする。 An exposure apparatus according to still another aspect of the present invention, ultraviolet light, far ultraviolet light and vacuum ultraviolet light is used as exposure light, the exposure light via the optical system including the optical element described above those該被processed Is exposed.
支持部材120は、筐体170の底部を貫通し、上部が成長炉CGFに達する。支持部材120は、坩堝110と坩堝110中の融液重量を支持し、坩堝昇降部130によって駆動されて坩堝110を上下移動する。また、支持部材120は、図示しない回転機構によって駆動されて坩堝110を回転できるように構成される。支持部材120による坩堝110の回転は、坩堝110の温度を均一にするために行われる。 The support member 120 penetrates the bottom of the housing 170, and the top reaches the growth reactor CGF. The support member 120 supports the crucible 110 and the weight of the melt in the crucible 110 and is driven by the crucible lifting / lowering unit 130 to move the crucible 110 up and down. Further, the support member 120 is configured to be able to rotate the crucible 110 by being driven by a rotation mechanism (not shown). The rotation of the crucible 110 by the support member 120 is performed in order to make the temperature of the crucible 110 uniform.
図1に示す結晶製造装置100を用いてフッ化カルシウムの製造を行った。以下、本発明の一側面である結晶製造方法1000を、結晶製造装置100の動作とあわせて説明する。図3は、本発明の結晶製造方法1000を説明するためのフローチャートである。 Calcium fluoride was manufactured using the crystal manufacturing apparatus 100 shown in FIG. Hereinafter, the crystal manufacturing method 1000 according to one aspect of the present invention will be described together with the operation of the crystal manufacturing apparatus 100. FIG. 3 is a flowchart for explaining the crystal manufacturing method 1000 of the present invention.
露光において、光源部512から発せられた光束は、照明光学系514によりレチクル520を、例えば、ケーラー照明する。レチクル520を通過してレチクルパターンを反映する光は、投影光学系530によりプレート540上に結像される。露光装置500が使用する照明光学系514及び投影光学系530は、本発明によるフッ化カルシウムから製造される光学素子を含んで、紫外光、遠紫外光及び真空紫外光を高い透過率で透過するので、高いスループットで経済性よくデバイス(半導体素子、LCD素子、撮像素子(CCDなど)、薄膜磁気ヘッドなど)を提供することができる。 In the exposure, the light beam emitted from the light source unit 512 illuminates the reticle 520 with, for example, Koehler illumination by the illumination optical system 514. Light that passes through the reticle 520 and reflects the reticle pattern is imaged on the plate 540 by the projection optical system 530. The illumination optical system 514 and the projection optical system 530 used by the exposure apparatus 500 include an optical element manufactured from calcium fluoride according to the present invention, and transmit ultraviolet light, far ultraviolet light, and vacuum ultraviolet light with high transmittance. Therefore, it is possible to provide a device (semiconductor element, LCD element, imaging element (CCD, etc.), thin film magnetic head, etc.) with high throughput and high economic efficiency.
Claims (13)
前記坩堝を移動させることで溶融した前記原料の結晶を成長させるステップと、
前記成長ステップで成長させた結晶から単結晶を切り出すステップとを有し、
前記切り出しステップは、前記原料から所定の結晶方位を有する母結晶を成長させる際に、前記所定の結晶方位とは異なる結晶方位を有するグレインバウンダリから切り出すことを特徴とする結晶製造方法。 A crystal production method for producing a single crystal from a raw material of a crystalline substance stored in a crucible,
Growing a crystal of the raw material melted by moving the crucible;
Cutting a single crystal from the crystal grown in the growth step,
The crystal cutting method is characterized in that, in the step of cutting, when a mother crystal having a predetermined crystal orientation is grown from the raw material, it is cut out from a grain boundary having a crystal orientation different from the predetermined crystal orientation.
前記坩堝を引き下げることで溶融した前記原料の結晶を成長させるステップと、
前記成長ステップで成長させた結晶から単結晶を切り出すステップとを有し、
前記成長ステップは、前記原料から所定の結晶方位を有する母結晶を成長させる際に、前記所定の結晶方位とは異なる結晶方位を有するグレインバウンダリを発生させるステップと、
前記グレンインバウンダリから前記異なる結晶方位を有する結晶を成長させるステップとを有し、
前記切り出しステップは、前記異なる結晶方位を有する結晶を切り出すことを特徴とする結晶製造方法。 A crystal production method for producing a single crystal from a raw material of a crystalline substance stored in a crucible,
Growing a crystal of the raw material melted by pulling down the crucible;
Cutting a single crystal from the crystal grown in the growth step,
The growing step includes generating a grain boundary having a crystal orientation different from the predetermined crystal orientation when growing a mother crystal having a predetermined crystal orientation from the raw material;
Growing a crystal having the different crystal orientation from the grain boundary;
The crystal cutting method is characterized in that the cutting step cuts out crystals having the different crystal orientations.
前記原料を収納して結晶成長させ、前記結晶成長が開始する前記坩堝の下部に円錐形状のコニカル部を有する坩堝であって、前記コニカル部が70度乃至110度の円錐角度を有する坩堝を有することを特徴とする結晶製造装置。 A crystal manufacturing apparatus for growing a single crystal from a raw material of a crystalline substance,
A crucible having a conical conical portion at a lower portion of the crucible where the raw material is stored and crystal growth is started, and the conical portion has a conical angle of 70 to 110 degrees. A crystal manufacturing apparatus.
露光された前記被処理体を現像するステップとを有することを特徴とするデバイス製造方法。 Exposing the object to be processed using the exposure apparatus according to claim 12;
And developing the exposed object to be processed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004194047A JP4731844B2 (en) | 2004-06-30 | 2004-06-30 | Crystal manufacturing method and apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004194047A JP4731844B2 (en) | 2004-06-30 | 2004-06-30 | Crystal manufacturing method and apparatus |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006016229A JP2006016229A (en) | 2006-01-19 |
JP2006016229A5 true JP2006016229A5 (en) | 2007-07-05 |
JP4731844B2 JP4731844B2 (en) | 2011-07-27 |
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Family Applications (1)
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JP2004194047A Expired - Fee Related JP4731844B2 (en) | 2004-06-30 | 2004-06-30 | Crystal manufacturing method and apparatus |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5210673B2 (en) * | 2008-03-19 | 2013-06-12 | 矢崎総業株式会社 | Resin molding machine |
Family Cites Families (5)
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JP4147595B2 (en) * | 1997-03-25 | 2008-09-10 | 株式会社ニコン | Method for producing fluorite single crystal |
JP2000128696A (en) * | 1998-10-16 | 2000-05-09 | Nikon Corp | Fluoride single crystal-made raw material for making optical element and production of the same raw material |
JP2002326893A (en) * | 2001-03-01 | 2002-11-12 | Canon Inc | Crystal manufacturing equipment |
US6994747B2 (en) * | 2001-07-17 | 2006-02-07 | Nikon Corporation | Method for producing optical member |
JP2003238292A (en) * | 2002-02-14 | 2003-08-27 | Canon Inc | Method of manufacturing fluorite crystal |
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2004
- 2004-06-30 JP JP2004194047A patent/JP4731844B2/en not_active Expired - Fee Related
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