JP2006013244A - Positioning device and exposure apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce measurement errors by effectively preventing the shape variation of a reflecting surface caused by the variation of the atmospheric temperature and the inclination of a reflection mirror caused by the acceleration and deceleration of a movable section. <P>SOLUTION: A positioning device includes a movable sample stage 50, an interferometer system which measures the position or attitude of the sample stage 50, and a reflection mirror 100 fixed to the sample stage 50 and provided with reflection surfaces which reflect the measuring light emitted from the interferometer system. The reflection mirror 100 is constituted to contain a first member 101 which is provided with a first reflecting surface 103 which reflects first measuring light emitted from the interferometer system, and a second reflecting surface 104 which is set perpendicularly to the first reflecting surface 103 and reflects second measuring light emitted from the interferometer system; and a second member 102 which is integrally provided with the first member 101 so that the member 102 may project to the surface of the member 101 on the side opposite to the first reflecting surface 103, and provided with an attaching surface 105 which is fixed to the sample stage 50 in a state where the surface 105 is made substantially parallel to the second reflecting surface 104 and brought into contact with the stage 50. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention is used in an exposure apparatus used in a photolithography process for manufacturing various microdevices such as a semiconductor element, an imaging element, a liquid crystal display element, or a thin film magnetic head, and the exposure apparatus and other semiconductor manufacturing apparatuses. The present invention relates to a positioning apparatus for positioning and moving a sample such as a suitable substrate to a predetermined position.

  In a photolithography process for manufacturing semiconductor devices, a step-and-repeat exposure apparatus (so-called stepper) that transfers a mask pattern onto a wafer or glass plate (hereinafter also referred to as a substrate) coated with a photoresist is widely used. ing. This step-and-repeat exposure apparatus exposes a shot area by collectively reducing and projecting an image of a mask pattern onto a shot area on a wafer. When the exposure of one shot area is completed, the wafer is moved stepwise to expose the next shot area, and this is repeated in sequence, which is called the step-and-repeat method.

  In addition, in order to expand the exposure range of the mask pattern, the exposure light from the illumination system is limited to a slit shape (rectangular shape), and a part of the mask pattern is reduced and projected onto the wafer using this slit light. A step-and-scan type exposure apparatus that synchronously scans the mask and wafer with respect to the projection optical system has also been developed.

  This type of exposure apparatus has a position in the X and Y axis directions (position in a plane perpendicular to the optical axis of the projection optical system) and posture (X axis, A positioning device for adjusting the amount of rotation about the Y-axis and the Z-axis) is provided. The positioning device is equipped with various laser interferometers (X interferometer, Y interferometer, pitching interferometer, etc.) for detecting the position and orientation of the sample, and reflects the measurement light emitted from the laser interferometer. Therefore, a reflecting mirror (moving mirror) is provided on each side surface along the X axis and the Y axis of the sample stage for holding the sample. The reflector is attached to the sample stage by screwing fixing at a plurality of locations, preload fixing by a spring, or adhesive fixing by an adhesive, but screw fixing is considered to be excellent for stable fixing. .

  In this type of exposure apparatus, focusing is performed using an oblique incidence light type autofocus sensor before and during exposure. This focusing is performed by irradiating the substrate surface with light obliquely from the projector and receiving the reflected light from the substrate surface with a light receiver to detect the height of the substrate surface (position in the optical axis direction of the projection optical system). By driving a plurality of actuators (Z actuators) provided on the substrate stage with the signal, the position of the sample stage holding the substrate in the optical axis direction (Z-axis direction) and the tilt with respect to the optical axis direction are controlled. Done.

  However, since such an autofocus system uses the surface of the substrate as the surface to be detected, when the stage moves to a range where the substrate is not located at the measurement point of the autofocus system (for example, a shot close to the peripheral edge of the substrate in scan exposure) If the substrate is not mounted on the substrate stage, the position of the sample stage in the Z direction cannot be detected, and more recent response to higher accuracy has made it more responsive. A detection system that is fast and has high resolution is required. For this reason, it has been proposed to provide a laser interferometer (Z interferometer) that directly measures the position of the projection optical system of the sample stage in the optical axis direction in the exposure apparatus ( JP, 2001-160535, A).

In the case of providing such a Z interferometer, a reflecting mirror is provided along the X axis or the Y axis on the lower surface of the sample stage in order to reflect measurement light irradiated from the bottom to the top along the Z axis direction. Provided.
JP 2001-160535 A

  As described above, the reflector is provided on the lower surface of the sample table for measuring the position of the sample table in the Z-axis direction, and is provided on the side surface of the sample table for measuring the position of the sample table in the X or Y-axis direction. Reflectors were provided independently of each other. However, if they were independent of each other, the number of parts and the number of mounting steps would be increased. Therefore, the reflection for measuring the position of the sample stage in the Z-axis direction. It can be considered that a single reflecting mirror having a surface and a reflecting surface for measuring a position in the X or Y axis direction is attached to the sample stage.

  However, simply attaching a single reflecting mirror having two reflecting surfaces to the sample stage causes the following problems. That is, when there is a difference between the thermal expansion coefficient of the reflecting mirror and the thermal expansion coefficient of the sample stage, the amount of heat generated by the actuator that drives the sample stage increases as the exposure apparatus and the like become more accurate and faster. Because of the tendency, the force accompanying thermal deformation of the sample stage acts on the reflecting mirror through the fastening part between the two due to the thermal expansion of the sample stage to which the reflecting mirror is attached, and on the reflecting surface of the reflecting mirror, There exists a problem that a measurement error may occur in the position detection of the sample stage due to warpage, undulation, distortion, and the like. Although the reflector and the sample stage are designed to have the same coefficient of thermal expansion as much as possible, for example, by using the same material, manufacturing errors of the reflector and differences in physical properties (for example, sintering the reflector) Therefore, it is difficult to make the coefficients of thermal expansion completely coincide with each other. In this case, for example, the difference in coefficient of thermal expansion between the reflecting mirror and the sample stage is about 0.1 ppm. Even if the ambient temperature changes only by 0.1 ° C., a deformation of about several nanometers occurs on the reflecting surface, which may cause a measurement error.

  Further, during acceleration / deceleration of the sample table, a bending moment acts on the structure on the sample table including the sample table itself. If the sample stage and the reflecting mirror are deformed in the same way in response to this bending moment, there is no problem. However, the sample stage is not deformed by the moment so much, but only the reflecting mirror is affected by the moment. If a large deformation (warp) occurs, for example, a pitching interferometer that measures the inclination of the sample stage around the X axis or Y axis may erroneously recognize that the sample stage is inclined. There is a problem that may become.

  The present invention has been made in view of the above points, and provides a structure that has a simple structure and that can minimize measurement errors associated with acceleration / deceleration of the sample stage and fluctuations in ambient temperature. With the goal.

  According to the first aspect of the present invention, a movable part (51) movable within a predetermined plane (XY plane), and a sample (W) supported by the movable part and movable with respect to the movable part. A sample stage (50), an interferometer system (30, 53) for measuring the position or orientation of the sample stage, and a reflection surface that is fixed to the sample stage and reflects measurement light emitted from the interferometer system. In the positioning device (WS) having the reflecting mirror (100) provided, the reflecting mirror receives the first measurement light (30a) emitted from the interferometer system in order to measure the position or orientation of the sample stage. A reflecting first reflecting surface (103) and second measuring light (53a) that is perpendicular to the first reflecting surface and emitted from the interferometer system for measuring the position or orientation of the sample stage is reflected. A first part comprising a second reflecting surface (104) (101), provided integrally with the first member so as to protrude from the surface of the first member opposite to the first reflecting surface, and substantially parallel to the second reflecting surface, A positioning device is provided that includes a second member (102) having a mounting surface (105) that abuts and is fixed to the sample stage. As a specific shape of the reflecting mirror, one in which the shape of the cross section orthogonal to each of the first and second reflecting surfaces of the reflecting mirror is set to a substantially T shape or a substantially L shape can be exemplified.

  In the reflector according to the present invention, a second member having a mounting surface substantially parallel to the second reflecting surface (that is, substantially perpendicular to the first reflecting surface) is a surface opposite to the first reflecting surface of the first member. The second member is attached to the sample stage so that the force received from the sample stage due to the difference in thermal expansion coefficient from the sample stage due to fluctuations in the ambient temperature is applied to the second member. Although it acts, it becomes difficult to reach the first member, and deformation such as warpage and undulation generated in the first member can be reduced. Therefore, even when the sample stage is thermally deformed, the shape change of the reflecting surface is small, and as a result, the measurement error can be reduced.

  In the invention according to the first aspect of the present invention, a portion present in the second member (102), wherein the portion on or near the neutral axis (106) of bending of the reflecting mirror (100) is It can be used as a fastening part (107, 110) for fastening the mounting surface (105) and the sample table. In the present invention, the “bending neutral axis” refers to an axis that is substantially parallel to the direction along the first and second reflecting surfaces of the reflecting mirror and passes through the center of gravity of the reflecting mirror.

  Since the force received from the sample stage due to thermal deformation (thermal expansion or contraction) of the sample stage acts on or near the neutral axis of bending through the fastening portion, the reflecting mirror is stretched or contracted as a whole. Although it occurs, the occurrence of warping and waviness on the first and second reflecting surfaces is reduced, and high-precision measurement can be performed.

  Further, the height (Z) position of the center of gravity (106) of the reflecting mirror (100) and the height position of the mounting surface (105) can be substantially matched. The propulsive force accompanying the acceleration / deceleration of the movable part (acceleration / deceleration in the Y direction in FIG. 3) acts on the reflecting mirror via the mounting surface with respect to the sample stage. However, the height position of the mounting surface and the height position of the center of gravity are Since they match, the variation in the posture of the reflecting mirror in the θx direction accompanying the movement of the movable part is reduced, and highly accurate measurement can be performed.

  Further, a groove (108, 109) penetrating the second member can be provided between the fastening portion (107, 110) on the second member (102) and the first member (101). In this case, the groove portion can be provided so as to surround at least a side of the fastening portion facing the first member side. Along with the fastening to the sample stage, a stress is applied to the reflecting mirror according to the dimensional error of the reflecting mirror and the fastening force, and the first reflecting surface may be slightly warped or waved. In this case, the period of warpage and undulation is relatively small. By forming such a groove portion, it is possible to suppress warpage and undulation itself that occur on the first reflecting surface, and even when bending or undulation occurs, the period is compared with the case where there is no groove portion. It becomes large and the correction becomes easy. The size, shape, number, and position of the groove are appropriately set depending on the influence of the stress on the reflecting surface and the strength and natural frequency of the reflecting mirror.

  According to the second aspect of the present invention, a mask positioning device (RS) that can position a mask (R) on which a pattern is formed, a projection optical system (PL) that projects the pattern, and the pattern are transferred. An exposure apparatus having a substrate positioning device (WS) capable of positioning a substrate (W), wherein at least one of the mask positioning device and the substrate positioning device includes the positioning device according to the first aspect of the present invention. Is provided. Since this exposure apparatus has the positioning apparatus according to the present invention capable of high-precision positioning, it is possible to position the substrate or mask with high precision, thereby accurately exposing and transferring a fine pattern. Will be able to.

  According to the present invention, it is possible to effectively prevent the shape of the reflecting surface due to changes in the ambient temperature and the tilt of the reflecting mirror accompanying acceleration / deceleration of the movable part, and as a result, the measurement error can be reduced. There is an effect that the sample can be accurately positioned.

  In addition, a fine pattern can be exposed and transferred onto the substrate with high accuracy, and it is possible to produce a microdevice or the like having a good quality.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  First, the overall configuration of an exposure apparatus to which the present invention is applicable will be described with reference to FIG. FIG. 1 is a view showing an outline of the overall configuration of an exposure apparatus according to an embodiment of the present invention. The exposure apparatus shown in FIG. 1 moves the pattern formed on the reticle R on the wafer W while relatively moving the reticle R as a mask and the wafer W as a substrate relative to the projection optical system PL in FIG. Is a step-and-scan exposure apparatus that manufactures a semiconductor element or the like by sequentially transferring to a semiconductor device.

  In the following description, the XYZ orthogonal coordinate system shown in FIG. 1 is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. The XYZ orthogonal coordinate system is set so that the X axis and the Y axis are parallel to the wafer W, and the Z axis is set in a direction orthogonal to the wafer W. In the XYZ coordinate system in the figure, the XY plane is actually set to a plane parallel to the horizontal plane, and the Z-axis is set vertically upward. In this embodiment, the direction (scan direction) in which the reticle R and the wafer W are moved synchronously is set in the Y direction.

  In FIG. 1, reference numeral 1 denotes an exposure light source that emits exposure light IL that is a parallel light beam having a substantially rectangular cross section, for example, an ArF excimer laser light source. For example, exposure light IL consisting of an ultraviolet pulse with a wavelength of 193 nm from the exposure light source 1 passes through a beam matching unit (BMU) 2 and enters a variable dimmer 3 as an optical attenuator. The exposure control unit 33 for controlling the intensity (illuminance) of exposure light with respect to the photoresist on the wafer W controls the start and stop of light emission of the exposure light source 1 and the output (oscillation frequency, pulse energy, number of pulses). . Further, the exposure control unit 33 adjusts the dimming rate in the variable dimmer 3 stepwise or continuously.

  The exposure light IL passing through the variable dimmer 3 enters a first fly-eye lens 6 as a first-stage optical integrator (a homogenizer or a homogenizer) through a beam shaping system 5 including lens systems 4a and 4b. To do. The exposure light IL emitted from the first fly-eye lens 6 passes through the first lens system 7a, the optical path bending mirror 8, and the second lens system 7b, and the second fly as a second stage optical integrator. The light enters the eye lens 9.

  On the exit surface of the second fly-eye lens 9, that is, the optical Fourier transform surface (surface that is optically conjugate with the pupil surface of the illumination optical system PL and the pupil surface of the projection optical system PL) with respect to the pattern surface of the reticle R, a drive motor An aperture stop plate 10 that is rotationally driven by 10c is disposed. The aperture stop plate 10 is composed of a disk configured to be rotatable around a rotation axis, and includes a circular aperture stop 10a for normal illumination, an aperture stop (not shown) for annular illumination, and a plurality (for example, four poles). An aperture stop 10b for deformed illumination composed of an eccentric small aperture and a small circular aperture stop (not shown) for a small coherence factor (σ value) are formed along the circumferential direction.

  The rotation shaft of the aperture diaphragm plate 10 is connected to the rotation shaft of the drive motor 10c. By driving the drive motor 10c and rotating the aperture diaphragm plate 10 around the rotation shaft, the second fly-eye lens 9 emits light. The aperture stop arranged on the surface can be switched. In accordance with the aperture stop disposed on the exit surface of the second fly-eye lens 9, the intensity distribution of the exposure light IL on the exit surface is changed. The drive of the drive motor 10c is controlled by the main control system 34 that controls the overall operation of the exposure apparatus.

  The exposure light IL that has been emitted from the second fly-eye lens 9 and passed through one of the aperture stops formed on the aperture stop plate 10 is incident on the beam splitter 11 having a high transmittance and a low reflectivity. The exposure light IL transmitted through the beam splitter 11 sequentially enters the fixed blind (fixed illumination field stop) 14 and the movable blind (movable illumination field stop) 15 through the lens systems 12 and 13 along the optical axis IAX. The fixed blind 14 is arranged so as to extend in a straight slit shape or a rectangular shape (hereinafter collectively referred to as a “slit shape”) in a direction perpendicular to the scanning direction at the center in a circular field of the projection optical system PL described later. Has an opening. The fixed blind 14 is disposed on a surface defocused by a predetermined amount in the optical axis IAX direction from the conjugate surface with respect to the surface on which the pattern of the reticle R is formed (hereinafter referred to as the reticle surface).

  The movable blind 15 is configured to be movable in a plane orthogonal to the optical axis IAX, and prevents unnecessary exposure at the start and end of scanning exposure on each shot area on the wafer W or illumination. It is used to make the width in the scanning direction of the visual field variable. The movable blind 15 is used to change the size of the pattern area of the reticle R in the direction orthogonal to the scanning direction. The movable blind 15 is disposed substantially on the conjugate plane with respect to the reticle surface.

  The exposure light IL that has passed through the movable blind 15 during exposure passes through a mirror 17 for bending an optical path, an imaging lens system 18, a condenser lens 19, and a main condenser lens system 20 in this order, and a pattern of a reticle R as a mask. The illumination area (illumination field area) IA of the surface (lower surface) is illuminated. Under the exposure light IL, the image of the circuit pattern in the illumination area IA of the reticle R is projected at a predetermined projection magnification α (α is, for example, 1/4 or 1/5) via the bilateral telecentric projection optical system PL. Then, the image is transferred to the slit-shaped exposure area EA on the wafer W as the substrate disposed on the imaging surface of the projection optical system PL. Note that the projection optical system PL may be one-side telecentric.

  Although the projection optical system PL of the present embodiment is a dioptric system (refractive system), it goes without saying that a catadioptric system (catadioptric system) and a reflective system can also be used. In addition, the projection optical system PL is best subjected to aberration correction with respect to the wavelength of the exposure light IL under a predetermined temperature (for example, 25 ° C.) and a predetermined atmospheric pressure (for example, 1 atm). R and the wafer W are conjugate with each other. The exposure light IL is Keller illumination and is formed as a light source image at the center of the pupil plane of the projection optical system PL. The projection optical system PL has a plurality of optical elements such as lenses, and the glass material of the optical elements is selected from optical materials such as quartz and fluorite according to the wavelength of the exposure light IL.

  In FIG. 1, a reticle R is attracted and held on a reticle stage 21, and the reticle stage 21 is mounted on the reticle base 22 so as to move at a constant speed in the Y direction and to be inclined in the X direction, the Y direction, and the rotation direction. Is placed. A movable mirror 23 is attached to one end of the reticle stage 21, and a laser interferometer 24 is provided facing the mirror surface of the movable mirror 23. The laser interferometer 24 measures the two-dimensional position and rotation angle of the reticle stage 21 (reticle R) in real time. Based on the measurement result of the laser interferometer 24 and control information from the main control system 34, the drive control unit 25 controls the scanning speed and position of the reticle stage 21.

  On the other hand, the wafer W is sucked and held on the wafer stage 27 via the wafer holder 26, and the wafer stage 27 moves two-dimensionally on the wafer base 28 along the XY plane parallel to the image plane of the projection optical system PL. . That is, the wafer stage 27 moves on the wafer base 28 in the Y direction at a constant speed and also moves stepwise in the X direction and the Y direction.

  Further, the wafer stage 27 incorporates a Z leveling mechanism for controlling the position (focus position) of the wafer W in the Z-axis direction and the tilt angles around the X-axis and the Y-axis. That is, as shown in FIG. 2, the wafer stage 27 is two-dimensionally moved along the XY plane on the sample base 50 and the wafer base 28 for holding the wafer W via the wafer holder 26. The sample stage 50 is held on a movable stage 51 via a Z driving device 52 having three actuators that are displaced in the Z-axis direction and an encoder that detects the driving amount of each actuator. The three actuators are dispersedly arranged so as not to be in a straight line, and by driving these actuators by the same amount, the sample stage 50 is translated in the Z-axis direction, and the drive amounts thereof are made different from each other. Can be tilted with respect to the XY plane.

  Reference is again made to FIG. A reflecting mirror (moving mirror) 100, which will be described in detail later, is attached to one end of the wafer stage 27, and a laser interferometer 30 is provided so as to face the first reflecting surface (side surface in the figure) of the reflecting mirror 100. ing. The laser interferometer 30 measures the position of the wafer stage 27 in the X and Y directions and the rotation angles (pitching, yawing, and displacement in the rolling direction) about the X, Y, and Z axes in real time. Based on the measurement result of the laser interferometer 30 and the control information from the main control system 34, the drive control unit 31 controls the scanning speed and position of the wafer stage 27.

  Further, in the vicinity of the wafer W on the wafer stage 27, an irradiation amount sensor 32 comprising a photoelectric detector having a light receiving surface having the same height as the exposure surface of the wafer W is installed. The irradiation amount sensor 32 receives exposure light IL from a transmission portion provided on the light receiving surface and detects an irradiation amount in the exposure area EA. When measuring the irradiation amount, the wafer stage 27 is Driven to place the dose sensor 32 at the center of the exposure area EA. The detection signal output from the dose sensor 32 is supplied to the exposure control unit 33. The exposure control unit 33 controls the exposure light source 1 or the variable dimmer 3 on the wafer W based on the detection signal. The intensity of the exposure light IL to be irradiated is controlled.

  Further, the light reflected by the beam splitter 11 described above is condensed on the light receiving surface of the integrator sensor 35 including a photoelectric detector via the condenser lens 35. For example, the light receiving surface of the integrator sensor 35 is substantially conjugate with the pattern forming surface of the reticle R and the exposure surface of the wafer W, and the detection signal (photoelectric conversion signal) of the integrator sensor 35 is supplied to the exposure control unit 33. .

  The exposure control unit 33 stores a conversion coefficient for obtaining an irradiation amount (exposure amount per unit time) on the wafer W from an output signal of the integrator sensor 35. Since the light receiving surface of the integrator sensor 35 is arranged at a position almost conjugate with the pattern surface of the reticle R, even when the illumination condition is changed by the aperture stop plate 10 arranged on the exit surface of the second fly-eye lens 9, An error does not occur in the detection signal of the integrator sensor 35. The light receiving surface of the integrator sensor 35 is arranged on an observation surface substantially conjugate with the Fourier transform surface (pupil surface) of the pattern of the reticle R in the projection optical system PL, and all light beams passing through this observation surface are received. You can make it possible.

  The exposure control unit 33 uses the light energy per unit time of the exposure light IL irradiated to the reticle R side and the light energy per unit time of the reflected light on the wafer W calculated from the detection signal of the wafer reflectance sensor 38. Is calculated. The calculated light energy is output to the main control system 34. Based on this light energy, the main control system 34 obtains the light energy per unit time of the exposure light IL that passes through the projection optical system PL.

  In the present embodiment, the imaging light beam for forming a pinhole or slit-shaped image toward the imaging surface of the projection optical system PL is obliquely oriented with respect to the optical axis AX of the projection optical system PL. An oblique incidence type focal position detection system 42 is provided which includes an irradiation optical system 42a to be supplied and a light receiving optical system 42b for receiving a reflected light beam of the imaging light beam on the surface of the wafer W. The focal position detection system 42 can detect the in-focus state between the wafer W and the projection optical system PL by detecting the position in the Z direction on the surface of the wafer W.

  Further, on the back side of the reticle R, an irradiation optical system 43a for supplying an imaging light beam for forming a slit-shaped image from an oblique direction with respect to the optical axis AX of the projection optical system PL, and the imaging light beam An oblique incidence type focal position detection system 43 is provided which includes a light receiving optical system 43b for receiving a reflected light beam on the back surface of the reticle R. This focal position detection system 43 can detect the position of the back surface of the reticle R in the Z direction and detect the conjugate state between the wafer W and the reticle R.

  Next, a Z position detection system that can be provided in the wafer stage 27 in the above-described exposure apparatus will be described in detail with reference to FIG. This Z position detection system is a measuring device that directly measures the position (interval with the projection optical system PL) in the optical axis direction (Z axis direction) of the projection optical system PL of the sample stage 50.

  The laser interferometer 53 of the Z position measurement system includes a laser light source (not shown). The laser light source emits a pair of laser beams 53a and 53b whose polarization directions are orthogonal to each other along the Y-axis direction. And inject. In the present embodiment, for convenience of explanation, of the pair of laser beams 53a and 53b emitted from the laser light source of the laser interferometer 53, one laser beam irradiated to the sample stage 50 as a measurement target. Is the measurement light 53a (P-polarized component, frequency component F1), and the other laser beam irradiated to the reference mirror 58, which will be described later, is referred to as reference light 53b (S-polarized component, frequency component F2). It doesn't matter.

  On the movable stage portion (movable portion) 51 of the wafer stage 27, a reflection mirror 56 is fixed so that the normal line of the reflection surface is at an angle of approximately 45 degrees with respect to the Y axis and the Z axis. The measurement light 53a and the reference light 53b emitted from the laser light source of the laser interferometer 53 and traveling on the optical path along the Y-axis direction are reflected by the reflection mirror 56 in the upper right direction (+ Z-axis direction).

  A reflection mirror (reflection mirror) 100 having the most characteristic configuration in the present embodiment is provided at the end of the sample stage 50. As shown in detail in FIGS. 3 and 4, the reflection mirror 100 includes a first plate-like portion (first member) 101 having a longitudinal direction in the X direction and the back surface of the first plate-like portion 101. A second plate-like portion (second member) 102 having a longitudinal direction in the X direction is integrally formed so as to protrude to the side, and its cross section (cross section cut along the YZ plane) is substantially T. It is set to be a letter shape.

  One of the two surfaces set substantially parallel to the ZX plane of the first plate-like portion 101 (the surface opposite to the second plate-like portion 102) is mirror-finished to become the first reflecting surface 103. In addition, one of the two surfaces (lower surface) set substantially parallel to the XY plane is similarly mirror-finished to form the second reflecting surface 104. A projecting mounting portion is formed on one (bottom surface) of two surfaces substantially parallel to the XY plane of the second plate-shaped portion 102, and the tip surface of the mounting portion contacting the sample stage 50 is the mounting surface 105. It has become. Further, the second plate-like portion 102 is formed with a plurality of screw fastening through holes 107 along the X-axis direction through which screws 110 for attaching to the sample stage 50 penetrate in the Z-axis direction. In this example, as shown in FIG. 4, the through-holes 107 are formed at a total of 8 locations, 2 at the center and 3 at the left and right along the X-axis direction. It is not limited to. In order to prevent the head of the screw 110 from protruding when the reflecting mirror 100 is screwed and fixed to the sample stage 50, a concave spot 112 is formed in the portion where the through hole 107 is formed and in the vicinity thereof. Is formed.

  Here, the first reflecting surface 103 is a reflecting surface for reflecting the measuring beams 30 a and 30 b from the laser interferometer 30, and the second reflecting surface 104 reflects the measuring beam 53 a from the laser interferometer 53. It is a reflective surface for. In addition, the displacement of the reflective surface 103 in the pitching direction (θx direction) can be measured by the measuring beams 30a and 30b.

  The reflecting mirror 100 is manufactured by mirror-finishing the reflecting surfaces 103 and 104 after sintering a ceramic material such as silicon nitride. When performing sintering molding, it is necessary to use a material in which sintering conditions (for example, sintering under high pressure) are appropriately set so that pores (bubbles, cavities) included therein are reduced as much as possible. desirable.

  In FIG. 3, what is indicated by reference numeral 106 is a neutral axis of bending of the reflecting mirror 100. The neutral axis of bending is an axis that is substantially parallel to the first reflecting surface 103 and the second reflecting surface 104 (that is, substantially parallel to the X axis) and passes through the center of gravity of the reflecting mirror 100. In this embodiment, the position in the Y-axis direction of the central axis 111 of the screwing through hole 107 is set to be in the vicinity of the neutral axis 106 of the bending. Originally, the position in the Y-axis direction of the screw-fastening through hole 107 is set so as to substantially coincide with the position in the Y-axis direction of the neutral shaft 106 of the bending. Although it is most preferable from the viewpoint of curving prevention, the distance in the Y-axis direction is set by comprehensively judging from the viewpoint of position measurement accuracy, the configuration of the part to which the reflecting mirror 100 and the reflecting mirror 100 of the sample stage 50 are attached, and the like. To do.

  Further, the position (height position) in the Z-axis direction of the mounting surface 105 is set to substantially coincide with the position (height position) in the Z-axis direction of the bending neutral shaft 106. The position of the mounting surface 105 in the Z-axis direction is set so as to coincide with the position of the bending neutral shaft 106 in the Z-axis direction. Although it is most preferable from the viewpoint of preventing a change in the posture of the sample stage 50 with respect to the sample stage 50, it may be arranged in the vicinity of the neutral axis 106 of the bending. 100 and the configuration of the part to which the reflecting mirror 100 of the sample stage 50 is attached, the maximum acceleration of the sample stage 50, and the like are comprehensively determined and set.

  A step portion (step surface) 50 a is formed at a corresponding portion (end portion) of the sample stage 50, and the reflection mirror 100 is in a state in which the mounting surface 105 is in contact with the step portion 50 a of the sample stage 50. Thus, the plurality of screws 110 are used to fasten (screw) the screws to attach to the sample stage 50.

  The measurement light 53 a emitted from the laser interferometer 53 in the −Y direction is reflected by the reflection mirror 56 provided on the movable stage unit 51, travels in the + Z-axis direction, and is reflected by the second reflection surface 104 of the reflection mirror 100. The light travels in the opposite direction (−Z-axis direction) and is further reflected by the reflection mirror 56 in the + Y-axis direction and returns to the laser interferometer 53. On the other hand, the reference light 53 b emitted from the laser interferometer 53 in the −Y direction is reflected by the reflection mirror 56 provided on the movable stage unit 51, travels in the + Z-axis direction, is reflected by the reference mirror 58, and travels. The light travels in the reverse direction (−Z-axis direction), is further reflected by the reflection mirror 56 in the + Y-axis direction, and returns to the laser interferometer 53.

  The reflection mirror 56 and the reflection mirror 100 are extended along the X-axis direction, and the measurement light 53a and the reference light 53b can be reflected wherever the movable stage 51 is within the movable range in the X-axis direction. It can be done. The reference mirror 58 is extended along the Y-axis direction so that the reference beam 53b can be reflected wherever the movable stage unit 51 is within the movable range in the Y-axis direction. The reference mirror 58 is attached to a lens barrel that holds the lens element of the projection optical system PL or a support column (not shown) that supports the projection optical system PL.

  The measurement light 53a and the reference light 53b reflected by the reflection mirror 56 and returned to the laser interferometer 53 are incident on a photoelectric conversion device (not shown) included in the laser interferometer 53. Inside the photoelectric conversion device, both polarization components are interfered by a polarizer, the interference light is detected by a photoelectric element, converted into an electric signal having a frequency of F2-F1, and sent to a phase detection unit (not shown). This phase detection means is a phase meter that detects an absolute phase difference between a reference signal transmitted from a laser light source and a measurement signal. That is, the interference light photoelectrically converted by the photoelectric conversion device has a frequency corresponding to the Doppler effect generated by the fluctuation of the distance between the reference mirror 58 and the second reflecting surface 104 of the reflecting mirror 100 at the beat frequency of F2-F1. A measurement signal having a frequency to which the change ΔF (t) is added is input from the photoelectric conversion device to the phase detection means. On the other hand, from the laser light source, a signal having a beat frequency of F2-F1 obtained by interfering the light of frequency F1 and the light of frequency F2 is input to the phase detection means as a reference signal. Then, the phase detection means detects the phase difference between the reference signal and the measurement signal, and integrates the amount of change in the phase difference, thereby changing the distance between the reference mirror 58 and the second reflection surface 104 of the reflection mirror 100. A signal proportional to minutes is required. As described above, when the interval between the reference mirror 58 and the second reflecting surface 104 of the reflecting mirror 100 varies, the absolute phase also changes in proportion to this, so that the variation of these intervals is measured from the absolute phase difference. Can do.

Here, the dimensions relating to the gap between each part of the reflecting mirror 100 and the sample stage 50 are specifically illustrated in association with the symbols Tx1, Tx2, Ty1 to Ty8, and Tz1 to Tz3 shown in FIGS. It is as follows.
Tx1: 420mm
Tx2: 45mm
Ty1: 39mm
Ty2: 26mm
Ty3: 18mm
Ty4: 10mm
Ty5: 0.1mm
Ty6: 10 μm
Ty7: 6mm
Tz1: 34mm
Tz2: 17mm
Tz3: 0.1mm

  The back surface (the surface on the −Y axis direction side) of the first plate-like portion 101 of the reflection mirror 100 and the corresponding surface (the surface on the + Y axis direction side) of the sample stage 50 have a surface accuracy of about 1 μm or less. These intervals (dimension Ty6) are set to a very small value of 10 μm. The reason why the surface accuracy and the distance between these surfaces are set in this way is to obtain a squeeze damper effect by a gas (air) interposed between them. The dimension Ty6 can be set in the range of about 5 to 15 μm.

  FIG. 8 shows the distance (dimension Ty4) in the Y-axis direction from the neutral axis 106 of the bending of the central axis 111 (that is, the mirror fixing point) of the threaded hole 107 for the reflection mirror 100 set to the above-described dimensions. The result of having simulated the relationship between the case where it changed in the range of 10-14 mm, and the curvature of a mirror surface (1st reflective surface 103) is shown. Here, the difference in coefficient of thermal expansion between the reflecting mirror 100 and the sample stage 50 is 0.1 ppm / K, and the results are obtained when the ambient temperature is uniformly increased by 0.1 ° C. The horizontal axis indicates the distance (mm), and the vertical axis indicates the mirror surface curvature (nm). As shown in the figure, it can be said that the smaller the distance Ty4 in the Y-axis direction between the neutral axis 106 of the bend and the mirror fixing point, the smaller the mirror surface curvature, and the less the influence of the sample stage 50 side. . In the above simulation, when Ty4 is less than 12 mm, a result that a reduction in mirror surface bending is preferable is obtained. However, since these numerical values are only the results under ideal conditions, in an actual apparatus, the arrangement of other members formed of different materials other than the reflecting mirror 100 attached to the sample stage 50, and the actuator temperature change It is determined in consideration of etc.

  FIG. 9 shows the height position of the center of gravity (position in the Z-axis direction) of the mirror 100 and the height position (position in the Z-axis direction) of the mounting surface 105 in the reflecting mirror 100 set to the above-described dimensions. It is a figure for demonstrating the effect by having made it substantially correspond. FIG. 9A shows the change in acceleration in the Y-axis direction of the stage, and FIG. 9B shows the X-axis of the first reflecting surface 103 of the reflecting mirror 100 corresponding to the acceleration change in FIG. 9A. The inclination θx (μrad) is shown. In FIG. 9B, the solid line indicates the inclination in the case of the present embodiment, and the conventional configuration is indicated by the dotted line for comparison. Here, as a conventional configuration, as shown in FIG. 9C, a rod-shaped reflecting mirror having a substantially rectangular cross section and substantially uniform in the X-axis direction is used, and the step portion 50a of the sample stage 50 described above is used. The thing of the structure fixed by screwing from the top in the state mounted on the top was used. In this conventional example, as is clear from FIG. 9C, the height position of the center of gravity of the mirror does not coincide with the height position of the mounting surface. In FIG. 9A, the inclination of the reflection mirror 100 of the present embodiment at the maximum acceleration (1G or −1G) is 0.03 μrad as shown in FIG. 9B, while the inclination of the reflection mirror having the conventional configuration is shown. Is 1 μrad, and it can be understood that the amount of inclination is 1/30 or less in the method of the present embodiment compared to the conventional method.

  For example, the corresponding mounting of the substantially T-shaped reflecting mirror 100 on the sample stage 50 is performed by, for example, providing a stepped portion on the lower surface side of the sample stage 50 to reverse the top and bottom of the reflecting mirror 100 shown in FIG. Thus, it may be performed from the lower side, or may be attached to the sample stage 50 without providing a stepped portion.

  2 and 3 show the configuration in which the reflection mirror 100 is provided at the end of the sample stage 50 on the + Y axis direction side, the same reflection mirror is provided at the end of the sample stage 50 on the −Y axis direction side. 100 is provided, and the laser beam from the laser interferometers 30 and 53 is branched, or another laser interferometer is provided to measure the displacement of the end portion of the sample stage 50 in the −Y-axis direction. good. Further, a similar reflection mirror 100 may be provided at the end on the + X axis direction side and / or the end on the −X axis direction side of the sample stage 50.

  By the way, generally, when the reflection mirror is attached to the sample stage by screw fastening, stress is generated in the reflection mirror according to the dimensional accuracy of each part, which may affect the reflection surface as the accuracy guarantee surface. In the reflecting mirror 100 of the present embodiment, the second plate-like portion 102 as the fastening portion and the first plate-like portion 101 as the accuracy-guaranteed portion are combined in a T shape to form an integral shape. The influence of the stress is absorbed by the second plate-like portion 102, and the first plate-like portion 101 (the first reflecting surface 103 and the second reflecting surface 104 as accuracy guarantee surfaces) is hard to be configured.

  However, since it is impossible to completely eliminate the influence of the stress accompanying the screw fastening on the reflecting surface, it is preferable to take measures as described below. FIG. 5 is a plan view showing a modification of the configuration of the reflecting mirror 100. In this example, a plurality (three places) of first groove portions 108 are provided at a boundary portion between the second plate-like portion 102 and the first plate-like portion 101. These first groove portions 108 are provided at three locations so as to correspond to two central locations and three left and right locations, respectively, among a plurality (eight locations here) of screw fastening through holes 107 as fastening portions. Provided. Further, the first groove portion 108 is provided so as to penetrate the second plate-like portion 102 substantially parallel to the XZ plane. The dimensions (the length in the X-axis direction, the width in the Y-axis direction), the formation location, and the number of formation of each first groove portion 108 are not limited to those shown in FIG. It is appropriately set in consideration of the relationship between the strength of the mirror 100 (change in posture of the first plate-like portion 101 with respect to the second plate-like portion 102 accompanying acceleration / deceleration), the natural frequency, and the like.

  By providing such a first groove portion 108, it is possible to further reduce the influence of the stress accompanying the screw fastening on the first plate-like portion 101, and warp and swell of the first reflecting surface 103 and the second reflecting surface 104. Can be reduced. In addition, the influence of the stress accompanying the screw fastening occurs as a relatively small period of undulation on the reflection surface as the accuracy guarantee surface, and it is difficult to correct the undulation of the small period, but by providing such a groove 108, Since the period can be increased, it is easy to measure the shape of the reflecting surface after the reflection mirror 100 is attached to the sample stage 50, and to perform correction based on the measurement result. Can be achieved.

FIG. 6 shows an example in which the configuration shown in FIG. 5 is further changed. That is, in FIG. 6, second groove portions 109 that intersect with the groove portions 108 are respectively provided continuously to both end portions (both end portions in the X-axis direction) of the groove portions 108 illustrated in FIG. 5. In FIG. 6, the second groove portion 109 is provided so as to be substantially orthogonal to the first groove portion 108. However, the second groove portion 109 is not limited to such a configuration, and may be provided obliquely.
Also, the shape may be a curved surface (curved in the XY plane) so as to surround the screwing through hole 107. It is possible to further reduce the influence of the stress accompanying the screw fastening on the reflecting surface.

  FIG. 7 is a diagram showing still another modification of the reflecting mirror. The reflecting mirror 100 shown in FIGS. 3 to 6 is configured so that its cross section is substantially T-shaped, but in this example, it is configured so that its cross-section is approximately L-shaped. Yes. Portions that are substantially the same as those shown in FIGS. 3 to 6 are assigned the same reference numerals and descriptions thereof are omitted.

  That is, the reflection mirror 200 includes a first plate-like portion 101 having a longitudinal direction in the X-axis direction and a second plate having a longitudinal direction in the X-direction so as to protrude to the back surface side of the first plate-like portion 101. The cross section (cross section cut along the YZ plane) is set to be substantially L-shaped. In this example as well, the grooves 108 and 109 shown in FIG. 5 or 6 can be provided.

  As shown in FIG. 7, the attachment of the substantially L-shaped reflection mirror 200 to the sample stage 50 is performed by bringing the attachment surface 105 into contact with a step portion (step surface) 50 a formed on the sample stage 50. It can be performed by screwing (screwing) in the state. Further, for example, a step portion may be provided on the lower surface side of the sample stage 50 so that the top and bottom of the reflection mirror 200 shown in FIG. 7 is reversed and attached to the sample stage 50 from the lower side.

Here, the dimensions relating to the gaps between the respective portions of the reflection mirror 200 and the sample stage 50 are specifically illustrated in association with the symbols Ly1 to Ty6 and Lz1 to Lz3 shown in FIG.
Ly1: 39mm
Ly2: 26mm
Ly3: 18mm
Ly4: 10mm
Ly5: 0.1 mm
Ly6: 10 μm
Lz1: 34mm
Lz2: 11mm
Lz3: 0.1 mm

Although not shown, dimensions Lx1, Lx2, and Ly7 of the reflecting mirror 200 corresponding to Tx1, Tx2, and Ty7 in FIG. 5 are as follows.
Lx1: 420mm
Lx2: 45mm
Ly7: 6mm

  In addition, about Ly6, it can select in the range of about 5-15 micrometers.

  In the present embodiment, since the position (interval) in the Z-axis direction with respect to the projection optical system PL of the sample stage 50 is directly measured by the laser interferometer 53, measurement of the focal position detection system (autofocus system) 42 is performed. When the wafer stage 27 is moved to a range where the wafer W is not located at a point (for example, when a shot close to the peripheral edge of the substrate is exposed from the outside in scan exposure), or the wafer W is placed on the wafer stage 27. Even if it is not, the position of the sample stage 50 in the Z-axis direction can be detected with high accuracy and high resolution.

  Also, a reflection mirror in which a first reflection surface 103 that reflects measurement light 30a from the laser interferometer 30 and a second reflection surface 104 that reflects measurement light 53a from the laser interferometer 53 are arranged on a single member. 100 (or 200), a reflection mirror having a reflection surface that reflects the measurement light 30a from the laser interferometer 30, and a reflection mirror having a reflection surface that reflects the measurement light 53a from the laser interferometer 53. Independently of each other, the number of steps for attaching the reflecting mirror to the sample table can be reduced and the attachment can be performed with high accuracy, as compared with the conventional technique in which the sample table 50 is attached to the sample table 50.

  Furthermore, in the above-described embodiment, the force received from the sample stage 50 due to thermal deformation (thermal expansion or contraction) of the sample stage 50 is near the neutral axis 106 of the bending (or the neutral axis of the bending) via the fastening portion. 106), the reflecting mirrors 100 and 200 expand or contract as a whole, but the occurrence of warping and undulation of the first and second reflecting surfaces 103 and 104 is reduced, and high-precision measurement is performed. Will be able to.

  Further, since the height position of the mounting surface 105 of the reflection mirrors 100 and 200 is set so as to substantially coincide with or near the height position of the center of gravity of the reflection mirrors 100 and 200, the stage is added. The posture fluctuation of the reflecting mirrors 100 and 200 with respect to the sample stage 50 due to the movement of the sample stage 50 due to the deceleration is reduced, and high-precision measurement can be performed.

  Further, the reflecting mirrors 100 and 200 are configured by integrally combining the first plate-like portion 101 and the second plate-like portion 102 so that the cross section thereof is substantially T-shaped or substantially L-shaped. The position of the central axis 111 (fastening center) of the through hole 107 for screwing in the Y-axis direction is set by appropriately setting the dimensions and relative relationship of the first plate-like portion 101 and the second plate-like portion 102. And the position of the mounting surface 105 in the Z-axis direction can be set in the vicinity of the neutral axis 106 of the bending (more preferably on the neutral axis of the bending), and the structure is highly flexible.

  The reflection mirrors 100 and 200 are preferably manufactured using the same material as the sample stage 50 in order to prevent a difference in coefficient of thermal expansion from the sample stage 50 as much as possible. In the description, silicon nitride that is the same material as the sample stage 50 is sintered. Although it is ideal that the sintering conditions in manufacturing the reflecting mirror 100 and the sample stage 50 are the same, the sample stage 50 is larger in size than the reflecting mirror 100 and adopts the same low pore type as the reflecting mirror. Then, since the manufacturing cost tends to be high, a low-cost and low-pore type is often adopted. Therefore, a difference in coefficient of thermal expansion can occur between the two, and when there is a difference in coefficient of thermal expansion between the two, it is particularly meaningful to use the reflecting mirrors 100 and 200 having the structure of this embodiment. .

  The embodiment described above is described for facilitating understanding of the present invention, and is not described for limiting the present invention. Therefore, each element disclosed in the above embodiment is intended to include all design changes and equivalents belonging to the technical scope of the present invention.

  For example, in the above-described embodiment, the case where the positioning device (Z position detection system) according to the present invention is applied to the wafer stage WS has been described, but the present invention can also be applied to the reticle stage RS.

  In the above embodiment, the case where the present invention is applied to a step-and-scan type exposure apparatus has been described as an example. However, the present invention can also be applied to a step-and-repeat type exposure apparatus (stepper). it can.

Further, in the above embodiment, laser light (wavelength: 193 nm) emitted from an ArF excimer laser is used as the exposure light IL. Alternatively, laser light emitted from a KrF excimer laser (wavelength 248 nm) or F ₂ laser (wavelength 157 nm), or a harmonic of a metal vapor laser or a YAG laser may be used. Alternatively, a soft X-ray region generated from a laser plasma light source or SOR, for example, EUV (Extreme Ultra Violet) light having a wavelength of 13.4 nm or 11.5 nm may be used. Furthermore, you may use charged particle beams, such as an electron beam or an ion beam. The projection optical system may be any one of a reflection optical system, a refractive optical system, and a catadioptric optical system.

  In addition, a single wavelength laser in the infrared or visible range oscillated from a DFB semiconductor laser or fiber laser is amplified by a fiber amplifier doped with, for example, erbium (or both erbium and yttrium), and a nonlinear optical crystal is used. Alternatively, harmonics converted to ultraviolet light may be used.

  Furthermore, not only an exposure apparatus for transferring a device pattern used for manufacturing a semiconductor element onto a wafer, but also an exposure apparatus for transferring a device pattern used for manufacturing a display including a liquid crystal display element onto a glass plate, a thin film magnetic head. The present invention can also be applied to an exposure apparatus for transferring a device pattern used for manufacturing a ceramic wafer onto an ceramic wafer, an exposure device used for manufacturing an imaging device (CCD or the like), a micromachine, a DNA chip, and the like.

  An illumination optical system and projection optical system composed of multiple lenses are incorporated into the exposure apparatus body for optical adjustment, and a reticle stage and substrate stage consisting of numerous mechanical parts are attached to the exposure apparatus body to connect wiring and piping. Further, the exposure apparatus of the present embodiment can be manufactured by further comprehensive adjustment (electrical adjustment, operation check, etc.). The exposure apparatus is preferably manufactured in a clean room in which the temperature, cleanliness, etc. are controlled.

  A semiconductor element includes a step of designing a function / performance of a device, a step of manufacturing a reticle based on the design step, a step of manufacturing a wafer from a silicon material, and a reticle pattern by the exposure apparatus of the above-described embodiment. It is manufactured through an exposure transfer step, a device assembly step (including a dicing process, a bonding process, and a packaging process), an inspection step, and the like.

  Needless to say, the present invention can be applied not only to the positioning apparatus employed in the exposure apparatus described above, but also to any positioning apparatus that moves and positions an object such as a substrate.

It is a figure which shows the whole structure of the exposure apparatus of embodiment of this invention. It is a figure which shows the principal part structure of embodiment of this invention. It is a side view which shows the structure of the T-shaped reflection mirror of embodiment of this invention. It is a top view which shows the structure of the reflective mirror of embodiment of this invention. It is a top view which shows the structure which improved a part of reflection mirror of embodiment of this invention. It is a top view which shows the structure which further improved a part of reflection mirror of embodiment of this invention. It is a side view which shows the structure of the L-shaped reflective mirror of embodiment of this invention. It is a figure which shows the relationship between the distance between the neutral axis | shaft of bending in the T-shaped reflective mirror of embodiment of this invention, and a mirror fixed point, and mirror surface bending. It is a figure for demonstrating the inclination of the mirror surface of the T-shaped reflective mirror of embodiment of this invention in comparison with the reflective mirror of a prior art.

Explanation of symbols

50 ... Sample stage 50a ... Step 51 ... Movable stage 53 ... Laser interferometer 53a ... Measurement light 53b ... Reference light 58 ... Reference mirror 100, 200 ... Reflection mirror 101 ... First plate-like portion 102 ... Second plate-like portion DESCRIPTION OF SYMBOLS 103 ... 1st reflective surface 104 ... 2nd reflective surface 105 ... Mounting surface 106 ... Neutral axis | shaft 107 of bending | screwing ... Through hole 108,109 ... Screw part 110 ... Screw 111 ... Center of through-hole, or fastening center

Claims (9)

A movable part movable within a predetermined plane; a sample stage supported by the movable part and movable while holding a sample with respect to the movable part; and an interferometer system for measuring the position or orientation of the sample stage; In a positioning device having a reflecting surface that is fixed to the sample stage and has a reflecting surface that reflects measurement light emitted from the interferometer system,
The reflector is
A first reflecting surface that reflects the first measurement light emitted from the interferometer system to measure the position or orientation of the sample stage; and a position or orientation of the sample stage that is perpendicular to the first reflecting surface and A second reflection surface that reflects the second measurement light emitted from the interferometer system for measuring
The first member is provided integrally with the first member so as to protrude from the surface opposite to the first reflecting surface, and is substantially parallel to the second reflecting surface and is in contact with the sample stage. And a second member having a mounting surface to be fixed.   The part that exists in the second member and that is on or near the neutral axis of the bending of the reflecting mirror is used as a fastening part for fastening the mounting surface and the sample table. Item 4. The positioning device according to Item 1.   The positioning device according to claim 1, wherein a shape of a cross section orthogonal to the first and second reflecting surfaces of the reflecting mirror is substantially T-shaped or substantially L-shaped.   The positioning device according to any one of claims 1 to 3, further comprising a groove portion penetrating the second member between the fastening portion on the second member and the first member. .   The positioning device according to claim 4, wherein the groove portion is provided so as to surround at least a side of the fastening portion facing the first member side.   The positioning device according to claim 1, wherein a height position of a center of gravity of the reflecting mirror is matched with a height position of the mounting surface.   The positioning apparatus according to claim 1, wherein the second measurement light is measurement light for measuring a position of the sample stage in a direction orthogonal to the predetermined plane.   The positioning apparatus according to claim 1, wherein a gap for obtaining a squeeze damper effect is provided between the first member and the sample stage. In an exposure apparatus having a mask positioning apparatus capable of positioning a mask on which a pattern is formed, a projection optical system that projects the pattern, and a substrate positioning apparatus that can position a substrate onto which the pattern is transferred,
An exposure apparatus, wherein at least one of the mask positioning apparatus and the substrate positioning apparatus has the positioning apparatus according to claim 1.

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