JP2005536013A - Microfabricated double throw relay with multimorph actuator and electrostatic latch mechanism - Google Patents

Abstract

The present invention is a new type of relay that incorporates a functional combination of multiple multimorph actuator elements and multiple electrostatic state retention mechanisms in the development of a single micromachined switching device. This combination of elements provides the advantages of zero power capacitance latching and the benefits of multiple high strength multimorph actuators in microfabricated relays with high reliability and low power consumption. The operation of the relay invention consists of several stable states for the device: one passive state that does not use power, one active state that drives the multimorph actuator with some power, and the nature One latched state that electrostatically holds the switch rate without requiring additional power is considered. The plurality of multimorph actuators included in the present invention includes a piezoelectric multimorph actuation mechanism, a thermal multimorph actuation mechanism, and a buckling multimorph actuation mechanism. These devices use one or more sets of actuator armatures in a cantilever or fixed beam configuration and use one or more sets of electrostatic latch electrodes for state keeping.

Description

One provisional patent application describing this device is 60 / 243,788, filed Oct. 27, 2000 and has the same title as this application.
One second application describing one related device is 60 / 243,786, also filed on Oct. 27, 2000, “Micro-machines with multimorph actuators and electrostatic latch mechanisms. Entitled "Fabricated Relays". Each of these provisional patents is related to multiple aspects of the present invention and is incorporated herein by reference.
None of the research and development that led to the present invention was sponsored by the US federal government.

  The present invention relates to the general field of switching devices, and in particular to the field of microfabricated relays.

  Since the original concept of microfabrication switching devices was created by Petersen in 1979, many attempts to develop various switches and relays for multiple applications at low power and high frequency It has been made. The goal of this effort is to increase the cost effectiveness and performance of switching technology by using small, batch manufactured, photolithographically defined moving structures as part of a single machine.

  Microfabricated electromechanical systems (MEMS) promise multiple long life, low cost, small size, and faster speed than multiple switching devices manufactured by conventional means, more than multiple solid state devices Provide high performance. In many applications, especially in high performance mechanical equipment, automated test equipment, radar, and applications in multiple communication systems, multiple switching devices with a certain quality are required or preferred. A plurality of specific values vary for each application, and specific values are given where appropriate in the detailed description of the invention. 1) Relay rather than a switch function that insulates multiple control signals from multiple load signals, 2) Multiple low resistance ohmic contacts between multiple relay electrodes, 3) Toggle relay open / closed state Low power usage, 4) Zero power or very low power to maintain one specific relay open / closed state, 5) High precision, low cost manufacturing, 6) High speed and powerful machine with multiple relay contacts 7) Fast and powerful mechanical opening of multiple relay contacts, 8) Multiple control signals and operating requirements that are easily achieved.

  Many switching device development efforts have been made to obtain some of these advantages, but none have achieved all. Most of the prior art multiple switching device designs discuss two major categories of devices: those that use multiple electrostatic actuation mechanisms and those that use multiple bimorph actuation mechanisms. be able to. Each type of actuation mechanism has a number of unique characteristics and advantages, and physical limitations that prevent prior art designs from obtaining all of the desirable qualities listed above. Although these devices and mechanisms will be described later, the majority of conventional microfabricated relay devices feature single throw operation. Single throw operation refers to opening and closing a single electrical contact when actuated, and double throw operation refers to disconnecting one electrical contact and closing a second contact when actuated. .

  Devices that are electrostatically actuated use two (or more) bias electrodes to which a voltage is applied. A plurality of opposite charges are generated on a plurality of surfaces of a plurality of electrodes facing each other, and an electrostatic force is generated. If a plurality of electrodes can be deflected towards each other, operation is possible. A switch or relay contact electrode of one electrostatic actuator is mechanically coupled to these moving bias electrodes, and the contact electrodes engage or separate when a voltage is applied and when the voltage is removed.

  Electrostatic actuation inherently supports some of the above operating characteristics and as a result is the most widely tried MEMS actuation mechanism for multiple switches and relays. Although multiple electrostatic actuators allow multiple ohmic contact relays and switches, it is difficult to achieve multiple low resistances. These require practically zero power to toggle between multiple states, and virtually zero power to maintain multiple states. Designers can use multiple microfabrication techniques to develop multiple electrostatic actuators that are precise and low cost. Although these actuators can provide multiple high speeds, it is difficult to achieve a large closing force and a large opening force cannot be easily generated. These actuators are difficult to design with low drive voltages (less than 10V) that are common in modern integrated circuits, but drive currents are usually negligible (less than 1 μA).

  The literature includes numerous examples of multiple MEMS switches and relays that demonstrate low power operation with very low power usage. U.S. Patent No. 6,099,056 (Loo et al.) Describes one representative example of a single throw, double contact cantilever MEMS relay that uses an insulator-metal-insulator stack for stress compensation. ing. Several other cantilever MEMS devices, such as one relay in Yao et al., US Pat. Use contact metal. James, et al., US Pat. No. 5,637,097 has a plurality of double contact relays that incorporate a plurality of bumps to improve manufacturing. Zavracky, U.S. Pat. No. 6,057,096, after his initial work on multiple solid metal switches, adds one novel actuating element that uses multiple separate fixed electrodes for biasing. . The literature includes switching device research by Milanobi et al., Where multiple devices are transferred from one substrate to another to improve high frequency signal switching.

  Several noteworthy attempts have been made to improve performance at multiple large signal loads, usually by increasing the size and power of the device at the expense of size, speed, and reliability. One representative example is that of Lee, US Pat. No. 6,057,031, which has a single copper device that is an order of magnitude larger and more powerful than the results of the aforementioned efforts. Komura et al. And Sato et al. Have also developed millimeter-sized multiple two-contact electrostatic MEMS relays for multiple moderate signal loads. One device of Goodwin-Johansson in US Pat. No. 6,057,096 reduces arcing in a hot switch situation by changing the contact resistance of multiple electrodes as the device opens and closes.

  Some electrostatic MEMS switching devices are designed to lower drive voltage requirements at the expense of device size, contact force, and often manufacturing inconveniences. Shen et al. And Pancheco have reduced multiple voltage requirements by increasing bias electrode size and armature flexibility. Ichiya et al., US Pat. No. 6,057,057, incorporates a novel method of using a plurality of stepped and tilted substrate bias electrodes to reduce the drive voltage.

  Some electrostatic MEMS devices have multiple sets of bias electrodes that open the device at a speed and force greater than the passive restoring force of deflected springs commonly found in multiple MEMS devices. Designed. Hah et al. Is one representative example, combining multiple torsion spring restoring forces with multiple opposing bias electrodes to open multiple relays. Kasano et al., U.S. Pat. No. 5,697,057, describes a single double contact MEMS relay with multiple drive open electrodes and multiple new embedded electrets to reduce multiple total voltage requirements. ing.

  Multiple bimorph actuators, unlike multiple electrostatic actuators, convert multiple control signals into mechanical deformations within the actuator itself. Multiple bimorph (or more generally multimorph) actuators consist of multiple layers that exhibit different physical responses to a particular stimulus. For example, one thermal bimorph has one first layer with one high coefficient of thermal expansion (above 10 ppm / ° C) and one second layer with one low coefficient of thermal expansion (below 5 ppm / ° C). You can have with layers. When this bimorph is subjected to one temperature increase, the relative expansion of the first layer is suppressed by adhesion with the second layer, and the actuator curls in response. Multiple devices work with this curl, and the forces created by multiple bimorphs can be much greater than the forces that can be achieved by multiple electrostatic actuators.

  Bimorph actuation essentially supports the multiple operating characteristics described above, and as a result is the second most widely tried MEMS actuation mechanism for switches and relays. They can be used in multiple ohmic contact devices, and multiple large forces created by multiple bimorph actuators result in multiple low contact resistances. Although they can be designed to operate at low force and toggle multiple states, only certain types of bimorphs can handle low force state latching. Multiple bimorph actuators can be provided with multiple high speeds and high closing forces, and can be designed to provide high multiple opening forces and speeds as well. Certain types of bimorph actuators can be designed with multiple low drive voltages and low drive currents.

  Most switching devices with multiple bimorph actuation mechanisms select multiple piezoelectric bimorph actuators to keep power consumption low, and such devices are usually among the desirable properties listed above. Show a lot. However, due to the manufacturing difficulties associated with multiple piezoelectric materials, there are only a few MEMS results that have studied multiple piezoelectric bimorph actuators. In addition, in order to prevent hysteresis and degradation, operating multiple piezoelectric bimorphs typically requires multiple complex high voltage waveforms. Farall, U.S. Pat. No. 6,057,831, describes a switching device featuring multiple arrays of multiple metal-piezoelectric-metal trilayer actuators. Kornrumpf, US Pat. No. 6,057,832, developed a series of piezoelectric bimorph actuators that extend from one central anchor region to handle varying signal loads. Kornrumpf, US Pat. No. 6,057,038 designed one piezoelectric relay that latches multiple states by changing the remanent polarization in the piezoelectric bimorph itself, allowing for controllable zero power passive latching. Tanaka, U.S. Pat. No. 6,037,059, developed one device consisting of a plurality of opposing cantilever piezoelectric bimorphs that produce a large closing force and travel distance. All of these devices were manufactured by conventional means and had all or many conventional piezoelectric material constraints.

  Most microfabricated bimorph actuators use multiple thermal bimorphs because they are easy to manufacture and generate drive signals. Such devices typically require constant use of power to maintain a single active state and often have multiple speed constraints based on heat transport phenomena. Field et al., US Pat. No. 5,637,086 discloses a general purpose thermal bimorph relay having a plurality of stacked substrates with a plurality of novel contact structures. Norling, US Pat. No. 6,099,075, has a single temperature sensing relay having a plurality of contact electrodes and a single electrostatic bias electrode for temperature sensing, which is exactly equivalent to a modern thermistor. Device. Carr, U.S. Pat. No. 6,057,836, includes one crafted set of opposing bimorphs that allow passive mechanical latching at the expense of large size, speed, and power usage. Developing relays.

A plurality of MEMS relays according to Gevater et al., US Pat. No. 6,057,049 and Schlaak, et al., US Pat. One bimorph actuator has a plurality of electrostatic electrodes integrated to assist in the closing operation.
The advantage is increased closing force and lower drive voltage at the expense of increased complexity and the need to drive both actuators simultaneously for proper relay function.
US Pat. No. 6,046,659 US Pat. No. 5,578,976 US Pat. No. 5,258,591 US Pat. No. 5,479,042 US Pat. No. 5,638,946 US Pat. No. 6,054,659 US Pat. No. 6,057,520 US Pat. No. 5,544,001 US Pat. No. 5,278,368 US Pat. No. 4,620,123 U.S. Pat. No. 4,819,126 U.S. Pat. No. 4,916,349 U.S. Pat. No. 4,403,166 US Pat. No. 5,467,068 US Pat. No. 5,463,233 US Pat. No. 5,796,152 US Pat. No. 5,796,152 US Pat. No. 5,629,565 US Pat. No. 5,673,785

  Despite the proven need that has been felt for a long time and the active and extensive efforts of many researchers and groups, including the above, the resulting devices are all instruments, radars, And not all of the attributes desired for high performance signal switching for multiple communication systems. The invention described in this document is the first device that achieves each of these characteristics with few disadvantages and limitations in a single double throw switch configuration.

  In the field of micromachined switches and relays, there are many devices that incorporate multiple multimorph actuator elements or electrostatic actuator elements. Multiple multimorph actuators are primarily used because of their ability to generate multiple large forces for any given drive power, voltage, or current. Multiple electrostatic actuators are used because they have the ability to operate at very low multiple powers to hold multiple switches or relays in one open or closed position. Although there was one desire in the industry to develop multiple devices that incorporate large forces to achieve reliable contact while using low power, none of the previous efforts were successful. The present invention is the first attempt to achieve this goal and achieves this goal by incorporating both high strength multimorph actuation and multiple zero power electrostatic latching mechanisms.

  The operation of the present invention takes into account a number of different stable states for the device. The first state is one passive state, which is the natural state of the relay when no control signal is applied to the device. When one active state is desired, one drive control signal is applied to the relay actuator, and multiple mechanical constraints of the device prevent further deflection of the relay armature. Once changed, it is desirable to keep the state in one latch state for a period that may be indefinite, so a single latch control signal is applied to the capacitive elements to attract these elements. These are combined with a plurality of electrostatic forces. At this time, a plurality of control signals can be removed from the actuator, and the relay remains latched. The relay can be returned to a passive state by removing the latch control signal. The double throw configuration allows for one second active state in which one second electrical contact is made with a relay in one second closed position. One associated second latch state is also incorporated to provide a low power latching capability for the second closed position.

  Definition of terms: For readers unfamiliar with multiple microfabricated devices, it is useful to outline terms and multiple units. The description of the drawings and the following detailed description of the invention include precise terms that describe the elements as they appear in the text, as they appear in the text. . For the purposes of this patent application, each term is considered to be one designated terminology that follows the accepted usage of the relay industry terminology. Millimeter (m) is the standard SI prefix for one thousandth (1 / 1,000). Micro (μ) is the standard SI prefix for one millionth (1 / 1,000,000). Nano (n) is the standard SI prefix for one billionth (1 / 1,000,000,000). Newton (N) is one standard SI unit of force equal to 1 kilogram-meter-seconds-seconds. A micron (μm) or micrometer is a unit of length equal to one thousandth of a millimeter. Microfabrication is defined as a production method that defines a plurality of components drawn through a plurality of photolithographic techniques generalized by the industry of integrated circuit developers. Micromachining is defined as the act of drawing one microfabricated element defined by photolithography and is often performed by one etching process using multiple acids or bases. An operation is defined as the act of opening or closing a relay or other switching device. One actuator is defined as the energy conversion mechanism that causes actuation. An armature is defined as any element that is deflected or moved by a single actuator to open or close a relay or other switching device. A multimorph is defined as an actuator consisting of a combination of layers that change size when exposed to a stimulus, the size changes varying for two or more different layers . A bimorph is defined as a multimorph with exactly two layers. A multimorph layer is defined as any one layer of a multimorph, each of which may or may not be sensitive to the driving stimulus defined for the multimorph. A piezoelectric multimorph is defined as a multimorph actuator that is sensitive to voltage stimuli, and one or more layers have a non-zero piezoelectric coefficient. A thermal multimorph is defined as a multimorph actuator that is sensitive to thermal or cold stimuli, and one or more layers have a non-zero coefficient of thermal expansion. A buckling multimorph is defined as a multimorph actuator that is sensitive to deflection stimuli, and one or more layers have multiple levels of non-zero stress in response to the buckling phenomenon. One fixed base is defined as one rigid integral relay area that provides mechanical support. One base substrate is defined as one microfabrication substrate that forms part of one fixed base. A load signal is defined as a signal to be switched by a relay or other switching device. One load signal line is defined as one port (input or output) for the load signal to be switched. One armature contact element physically connects with other contact elements to form and / or disconnect one conduction path for one load signal to travel from one input to one output load signal line. Defined as one element located on one armature that engages and / or disengages. A contact armature is defined as an armature having a plurality of attached armature contact elements. One base substrate contact element is physically connected to other contact elements to form and / or disconnect one conduction path for one signal to travel from one input to one output load signal line. Defined as one element located on one base substrate that engages and / or dissociates. One drive signal is defined as one signal that initiates the operation of one relay or switch. One drive signal line is defined as one line to which one drive signal is directed. At least two drive signal lines are required for a plurality of electrical drive signals, one for the signal and one for the reference. One latch signal is defined as one signal that holds one relay or switch in one open or closed state. One latch signal line is defined as one line to which one latch signal is directed. At least two latch signal lines are required for multiple electrical latch signals, one for the signal and one for the reference. An armature electrode is defined as a conductive region attached to the armature, to which a plurality of latch signals or a plurality of references thereof are directed. A base substrate electrode is defined as a conductive region attached to the base substrate, to which a plurality of latch signals or a plurality of references are directed. One latch electrode insulator is defined as one insulating region that prevents electrical contact between the armature electrode and the base substrate electrode.

  The present invention encompasses multiple switching speeds and signal loads that are generally smaller than the standards of multiple relay industries. For example, one functional distinction between μA and mA is not made with respect to load signal strength for conventional relays, but for these different load signals the performance of microfabricated relays And several design differences are important. For the purposes of this patent, it should be noted that the following speed and signal loads are defined and that these classifications are different from those defined in the relay industry standards. Multiple very fast switching times are defined as less than 100 nanoseconds. Multiple fast switching times are defined as 100 nanoseconds to 1 microsecond. Multiple intermediate switching times are defined as from 1 microsecond to 100 microseconds. Multiple slow switching times are defined as from 100 microseconds to 10 milliseconds. Multiple very slow switching times are defined as greater than 10 milliseconds. Multiple very low signal loads are defined as less than 10 μA DC current or less than 100 μW RF power. Multiple low signal loads are defined as 10 μA to 10 mA or 100 μW to 100 mW. Multiple medium signal loads are defined as 10 mA to 500 mA or 100 mW to 5 W. Multiple high signal loads are defined as 500 mA to 5 A or 5 W to 50 W. Multiple very high signal loads are defined as DC current greater than 5A or RF power greater than 50W.

  All the attached drawings show cross sections, except for FIGS. Multiple designations of materials are made through functional cross-hatching, multiple simple black edges, and counting of all elements. All elements shown with white or thick cross-hatching represent one material that is electrically insulating. The elements shown in a thin closely spaced pattern of cross hatches represent a plurality of materials that are a plurality of electrical conductors. Multiple cross-hatched patterns for all elements are shown in the plan views of FIGS. 1, 6 and 11 for purposes of clarity and continuity. Multiple semiconductor materials can be used in multiple alternative embodiments to produce the multiple insulators and / or conductors described depending on the doping level of the semiconductor.

  FIG. 1 is a functional plan view of one embodiment of the present invention having a plurality of transverse lines and views for the sake of clarity, and may be buried below the top surface indicated by the dashed outline. It has many elements. FIG. 1 is a plan view with a cover removed to expose multiple actuator elements of one exemplary embodiment. The two cross-sectional views shown alongside FIG. 1 are FIGS. 2A and 3A, which are views of one load armature and actuator armature, respectively. FIG. 4 is a cross-sectional block diagram of one of the plurality of armatures in the region of one multimorph actuator, showing the relationship between the plurality of electrical connections. 5A, 5B, and 5C illustrate a plurality of relay regions having latching and contact mechanisms in an open relay state (FIG. 5A), a closed-down relay state (FIG. 5B), and a closed-up relay state (FIG. 5C). The cross section of is shown. The bending function of one contact armature is shown in FIGS. 5B and 5C, depicting the relay in multiple fully latched states.

  2A, 2B, 2C, 2D and 2E show cross-sectional views of the load armature in the five operating states of the device. FIG. 2A is a load armature when the relay is in a passive state. FIG. 2B shows the curvature induced in the load armature when one relay is driven into one active down state. FIG. 2C shows one curvature induced in the relay's load armature when in the latched-down state. FIG. 2D shows the curvature of the load armature when one relay is driven into an active up state. FIG. 2E shows one curvature induced in the relay load armature when in the latch-up state.

  3A, 3B, 3C, 3D, and 3E show cross sections of one piezoelectric multimorph actuator armature in the same five operating states of the device. FIG. 3A is the actuator armature when the relay is in a passive state. FIG. 3B shows the curvature induced in the actuator armature when one relay is driven into one active down state. Armature electrode contact is seen in FIG. 3C, which shows one possible curvature induced in the actuator armature when the relay is latched down. FIG. 3D shows the curvature induced in the actuator armature when one relay is driven into one active up state. Armature electrode contact is again shown in FIG. 3E, which shows one possible curvature induced in the actuator armature when the relay is in a latched up state.

  Figures 6 to 10C illustrate one alternative embodiment. FIG. 6 is a functional plan view of one embodiment using one thermal multimorph as one main actuator. The two cross-sectional views shown alongside FIG. 6 are FIGS. 7A and 8A, which are cross-sectional views of one load armature and a thermal multimorph actuator armature, respectively. FIG. 9 is a cross-sectional configuration diagram of one of a plurality of armatures in the region of one multimorph actuator. Similar to FIGS. 5A, 5B, and 5C for the previous embodiment, FIGS. 10A, 10B, and 10C show that the latching and contact mechanisms are in the open relay state, the closed-down relay state, and the closed-up relay state. A cross section of the relay region is shown.

  7A, 7B, 7C, 7D and 7E are cross-sectional views of the load armature in the five operating states of the device. FIG. 7A is a load armature when the relay is in a passive state. FIG. 7B shows the curvature induced in the load armature when one relay is driven into one active down state. FIG. 7C shows one relay curvature induced in the load armature in the latched down state. FIG. 7D shows the curvature induced in the load armature when one relay is driven into one active up state. FIG. 7E shows one curvature induced in the relay load armature when in the latched up state.

  8A, 8B, 8C, 8D and 8E are cross-sectional views of one thermal multimorph actuator armature in the same five operating states of the device. FIG. 8A is the actuator armature when the relay is in a passive state. FIG. 8B shows the actuator armature when the relay is driven into an active down state. An armature electrode contact is seen in FIG. 8C, which shows one curvature induced in the actuator armature when in the latched-down relay state. FIG. 8D shows the actuator armature when the relay is driven into one active up state. An armature electrode contact is seen in FIG. 8E, which shows one possible curvature induced in the actuator armature when in the latched-up relay state.

  In one third embodiment of the invention of the relay, the relay can be composed of a plurality of actuator armature structures, as shown in FIG. This relay is shown with the actuator armature perpendicular to the load armature. Such multiple configurations having various numbers of actuator armatures or load armatures are primarily determined by a skilled designer in the art. FIG. 12 shows one cross-sectional configuration of the load armature of this embodiment. 13A, 13B, and 13C are cross-sectional configuration diagrams of the actuator armature of the relay in three of the five operating states of the third embodiment. Each figure shows a plurality of thermal actuator armatures that act to close the device, a thermal actuator armature that acts to open the device, and a contact armature region surrounding the contact electrodes . FIG. 13A shows the actuator armature when the relay is in a passive state. FIG. 13B shows the curvature induced in the actuator armature when the relay is driven into the active down state. FIG. 13C shows multiple actuator armatures when in the latched down state. Multiple actuator armature views in the active up and latched up states are not shown for the sake of brevity.

  The present invention is a new type of relay that incorporates the functional combination of multiple multimorph actuators and multiple electrostatic state retention mechanisms in the development of a single micromachined double throw switching device. This combination of multiple elements provides the benefits of multiple high-strength multimorph actuators with the advantages of highly reliable, zero-power capacitive latching at low power consumption in multiple microfabricated relays To do. The following discussion first discusses this functional combination of multiple actuator technologies, and then discusses in detail some specific device embodiments of the present invention.

  One relay is one switching device to which the feature that the control signal path is insulated from the load signal path is added. One such device can have multiple variations or irregularities that can degrade the integrity of one sensitive load signal (such as a single data stream or test device signal). It enables switching of multiple signals that change or are sensitive without interference from the control signal. This also protects the control electronics in multiple applications where the load signal can be dangerous in some way. A single high voltage or high current load signal can overload multiple control electronics if interaction with multiple control signal paths is enabled. Because RF power cannot be completely suppressed due to capacitive or inductive coupling, multiple radio frequency devices often require the control electronics to be highly isolated from multiple signal loads. Most single throw relays have two stable operating states that determine whether the load signal circuit is 1) open or 2) closed. One such device forms an important component in a variety of applications in DC, low frequency, and radio frequency applications, and many efforts to create a micro-fabrication version of multiple relays are industrially Prove the benefits of.

  Multiple multimorph actuation mechanisms are fast (microseconds to milliseconds) over medium distances (from tens of microwatts to tens of milliwatts in continuous operation) and moderate distances (armature deflection from tens of micrometers to mm) Have been capable of producing equally high forces (contact force from mN to N) with a plurality of switching devices for decades. In the present invention, multimorph actuator technology is used to create and disconnect multiple electrical load signal contacts to generate a plurality of intermediate contact forces. However, multiple multimorph actuator technology may have some of the significant drawbacks discussed in the background section. Some technologies, for example, require that constant power persist, while some other technologies are weakened if a single actuator drive signal or relay state is maintained over a long period (seconds to years). Cause unreliability or damage.

  In order to avoid these undesirable attributes, the present invention combines one secondary mechanism with a multimorph actuator to provide a low power, non-destructive option to maintain relay state. Electrostatic actuation has long been one core technology in the microfabrication actuator industry seeking the benefits of its low power consumption (from nW to μW) and fast closure time (from 100 nanoseconds to 100 microseconds). Met. However, typical forces (from 1 μN to 0.5 mN) and actuator travel distances (from 1 to 10 μm) for these devices are very limited, so most electrostatic relay efforts are It suffers from insertion loss, reliability (both related to contact force), insulation, and standoff voltage (both related to gap separation).

  The present invention is superior to conventional microfabrication relays because it combines the benefits of each of the two actuation techniques. In the present invention, electrostatic actuators are used to keep each device closed, and most of the work required to achieve this state is performed by equally powerful multimorph actuators. In such a combination, the advantages of each actuator are realized and these disadvantages are eliminated.

  The present invention discusses a plurality of microfabricated relays having a total width dimension between 10 μm and 10 mm and a total planar dimension of the total length. The planar dimensions selected for one particular design mainly depend on the required speed and the power level of the signal load to be switched, with multiple ranges being predetermined. Devices that require fast or very fast switching are designed at the lower end of a given size range, devices that handle high or very high signal loads are It will have multiple sizes near the top edge.

  One device intended to be used at low to medium signal loads and medium to fast switching speeds according to the present invention is expected to have multiple planar dimensions between 75 μm and 1.5 mm. The Such multiple dimensions may be suitable for medium range wireless communication devices, transmit phased array antenna electronics, or general telecommunications switching applications. In applications where high or very high signal load switching is required and multiple low speeds are allowed, such as multiple multipurpose industrial relays and high power RF systems, the total planar dimensions of the devices according to the present invention are 0. It is contemplated that it can be 5 to 10 mm. Multiple applications with light or very light signal loads that require multiple high speeds, such as multiple short-range wireless communication devices, antenna receiving electronics, or some sort of automated test equipment It is also conceivable that a plurality of devices according to the invention having a planar dimension will be required. Each of these ranges of total planar relay lengths and widths may be considered reasonable for the application of the present invention. In addition, multiple applications that require conflicting fast switching speeds and high signal loading requirements for the same device require that the device be designed with multiple planar dimensions somewhere within the proposed ranges. You can see that you will.

  Throughout the detailed description, multiple possible materials and sizes for various elements have been proposed for multiple applications that define one specific signal load or switching speed. It would be instructive to examine one specific example of material and geometry selection for one application envisaged for the present invention. Consider an application with multiple low signal loads that allow for moderate switching speeds, so that one first embodiment represents one possible design for the application of the present invention. This embodiment is illustrated in FIGS. 1-5.

  FIG. 1 is a functional plan view of one general class of the present invention, where one cantilever load armature and one cantilever latch armature are fixed at one common end and the opposite end The free ends can be deflected freely at the part, and these free ends are mechanically coupled to each other by a single contact armature. FIG. 1 is not a single true plan view, as multiple elements, such as multiple electrical connections and electrodes, that may be embedded in the device are depicted. If the top cover plate is removed and all fixed elements are made of a transparent material and multiple conductors obstruct line of sight through the device, the view provided by FIG. 1 will be accurate. The elements are shown with consistent cross-hatching in the plan view, and the subsurface elements are shown with dashed outlines rather than solid outlines.

  The two cross-sectional views shown alongside FIG. 1 are FIGS. 2A and 3A, which show the load armature and the latch armature, respectively. FIG. 4 is a cross-sectional block diagram of one of a plurality of armatures in the general region of one multimorph actuator, showing a plurality of electrical connections and insulators. FIGS. 5A, 5B, and 5C show multiple cross sections of the region with latching and contact mechanisms in an open relay state, a closed-down relay state, and a closed-up relay state, respectively. One contact armature bend is shown in FIGS. 5B and 5C, which depict the relay in a fully closed and latched state.

  One aspect of the relay invention is the functionality of a plurality of armatures, each with or without transmission of a plurality of load signals and / or control signals. It will be instructive to examine the plan view and side view cross section to note the position and function of each element discussed. One fixed base (101) is a single, rigid and integral region, consisting of a number of semiconductor, metal, or dielectric elements that are fixed together to provide mechanical strength. Good. The overall size of the fixed base can help define the maximum size of the attached relay and its load signal processing capability. One fixed base further includes a base substrate (102) and a cover substrate (134), such as glass, polyimide or other polymer, alumina, quartz, gallium arsenide, or silicon. It may consist of one or more microfabricable dielectric or semiconductor materials. The preferred base substrate in this embodiment is polished quartz that is at least 250 μm thick and extends at least 1 mm in each planar dimension, and is large enough to facilitate automated manufacturing, packaging, and system insertion. Consider a solid base of microfabrication quality materials. On this fixed base, one first load signal line (103), one second load signal line (104), 1 One third load signal line (135) and one fourth load signal line (136) are provided. Also attached to the fixed base are one first drive signal line (105) and one second drive signal line (106), and a plurality of leads to which one drive signal for operating the device is applied. It is contemplated that in many devices according to the present invention, the plurality of drive signal lines will be electrical paths. To latch one first latch signal line (107), one second latch signal line (108), and one third latch signal line (141), one closed state on a fixed base A plurality of lead wires to which a plurality of latch signals are applied are further provided. Since the latching mechanism used in the present invention is the electrostatic attraction of a plurality of capacitive electrodes, the latch signal line is an electrical path.

  In the embodiment illustrated by FIGS. 1-5, the plurality of load signal lines are plated with a thickness of 4 μm for low relay electrical resistance with one nickel deposited plating layer having a thickness of 0.4 μm. Made from gold alloy. One such metallization is thick enough and low enough to allow multiple low loss lines for light to medium load signals, and nickel is One plating layer is provided that does not significantly interfere with the electrical performance of the gold. The plurality of control signal lines and latch signal lines of this embodiment may be manufactured from a 0.4 μm nickel material that is not gold plated. Since the load power is not conducted in the plurality of control signal lines and the latch signal lines, the low efficiency of gold may not be necessary, and a plurality of low manufacturing costs can be realized by omitting this. Gold may be important for multiple device packaging processes such as wire bonding or flip chip attachment, in which case gold plating can be used.

  In one application of the invention, the set of materials that can be used for any electrical path, line, or electrode element is a set of conductive materials, also referred to as conductors. The conductors used to fabricate the relay elements according to the invention are defined as having a resistivity of 0.2 ohm centimeter or less, equivalent to that of highly doped semiconductors. A plurality of materials having one low resistivity may be selected. In some devices according to the present invention, the plurality of materials that can be used include a plurality of metals such as gold, copper, silver, platinum, nickel, and aluminum. In other devices according to the present invention, the materials that can be used include semiconductors such as doped silicon, gallium arsenide, silicon germanium, indium phosphide. It is also contemplated that any alloy or combination of metals or semiconductors that have a low overall low efficiency may be used.

  In multiple devices according to the present invention, multiple thicknesses of material for multiple electrical paths may range from 0.1 to 100 μm depending on the application and the multiple manufacturing techniques available. It is further noted that the thickness of one electrical path or line in one device according to the present invention may differ significantly from the thickness of a second electrical path or line in the same device due to different electrical and manufacturing requirements. Conceivable. It is generally recognized by those skilled in the art that the electrical resistance of any path is related to its resistivity, its thickness, its width, and its overall length. As a result, power can be saved by selecting multiple materials and geometries to reduce path resistance, especially for high and very high power multiple signal loads. Using multiple materials with one high resistivity and small width and thickness can result in joule heating of the relay element and can increase signal loss within the device.

  Relationships between desired multiple material thicknesses and multiple applications can be created. The ranges provided assume that the electrical paths are made from a plurality of conductive materials as described above. It is believed that the material thickness of one path can range between 0.1 and 3 μm for one device intended to be used with multiple low signal loads and multiple fast switching times in accordance with the present invention. . Such paths are lighter, thinner and have higher resistance than thicker paths of the same width and material, and are useful in applications that switch low or very low load signal powers. Conceivable. For applications with moderate signal loads and switching times, it is believed that the electrical path material thickness can range between 0.5 and 15 μm depending on the resistivity and width of the path. In applications that require high load signal switching, it is believed that the material thickness of one path can range between 4 and 100 μm. One such path would have greater mass and lower resistance than multiple thinner paths of the same width and material.

  In some devices of the present invention, the physical geometry, material properties, and electrical properties of the armatures themselves should be considered. In the embodiment shown in FIGS. 1-5, one latch armature (109) is suspended from one region of the fixed base of FIGS. 1 and 3A. This actuator armature is in the form of one cantilever, one area being fixed (110) and one area being freely deflectable (111). In some devices according to the present invention, one or more of a plurality of microfabricable materials such as silicon, silicon dioxide, silicon nitride, gallium arsenide, quartz, polyimide or other polymers, or a metal. The aim is to have multiple armatures composed of layers. The actuator armature of the embodiments discussed herein is selected to facilitate microfabrication by chemical vapor deposition or spin-on glass techniques, and is a single insulating rigid armature structure. One layer of silicon dioxide with a thickness of 8 μm.

  It has been observed that the vertical stiffness of one cantilever beam is related to one third order with respect to thickness, one inverse third with respect to length, and is approximately linear with respect to the width of the beam. Consequently, in terms of design, thickness and length are more important than width for one beam that is expected to deflect in one vertical direction perpendicular to the substrate. It is believed that the overall thickness of such an armature will range from 0.2 μm to 1 mm, depending on the application, length, and manufacturing technique used in the fabrication. It is reasonable to expect that one armature in a device according to the invention may have a length between 5 μm and 5 mm. The actuator armature of the presently discussed embodiment is 40 μm wide and 180 μm long and is wide enough to reduce line resistance and long enough to make the armature flexible. And provide.

  In one device according to the present invention designed to have very low or low signal load and very fast or fast switching speed, the armature thickness is 0.2 to 4 μm and the length is 5 and 50 μm It is thought that it can get between. In one device designed to have low or medium signal load and fast or medium switching speed, the thickness of one armature is between 1 and 40 μm and the length is between 25 and 500 μm It is thought that it can span. In one application that requires medium or high signal loads and moderate or low switching speeds, the thickness of one armature can range from 10 to 400 μm and the length can be between 100 and 2 mm. it is conceivable that. In one device designed to have a high or very high signal load and a slow or very slow switching speed, the armature is between 200 μm and 1 mm in thickness and between 1 and 5 mm in length. It is considered good.

  The ranges of armature sizes discussed are not only applicable to armatures and other elements of a solid rectangular design, but to armatures in which one or more dimensions vary with a single linear or non-linear function Or it is intended to apply to other elements. An example of one such armature would be one load armature that narrows from one width to one smaller width at the free end. One such structure would be beneficial in multiple RF applications as it reduces multiple input reflections and provides a performance that is higher than a single rectangular load signal armature.

  FIG. 3A is a side block diagram of one multimorph actuator and electrostatic latch armature in one passive state. A multimorph is an element consisting of two or more layers of materials having different properties. The bimorph shown is a multimorph with exactly two such layers. The multiple material layers of one multimorph actuator each change by a different amount when exposed to a single stimulus. In the case of a single piezoelectric multimorph actuator or a thermal multimorph actuator, the stimulus is an applied voltage or heat, respectively. In the case of a single buckling actuator, the stimulus is a mechanical deformation in the direction of buckling sensitivity, which is magnified by the resulting unstable physical behavior of the buckling element. The In each case, the layers are tightly bonded along one or more planes, so that different expansions of the materials cause the multimorph to bend away from the layer or layers having the greatest expansion. I will try. The multimorph actuator shown in FIGS. 1 and 3A includes two materials (113) and (114). Each of the two materials of the multimorph changes by a different amount with a single stimulus applied. In the presently discussed embodiment, a multimorph is a piezoelectric bimorph whose materials have different piezoelectric coefficients. In this embodiment, it is contemplated that material (113) has the highest piezoelectric coefficient of the two materials and element (114) represents a neutral material with respect to piezoelectricity. The piezoelectric actuator of this embodiment is formed from one 12 μm thick lead zirconate titanate (PZT) ceramic layer on one 6 μm thick silicon dioxide layer and the quantity is easily achieved. The resulting actuation voltage is sufficient to force the actuator armature to curl.

A plurality of piezoelectric multimorph actuators used by a plurality of devices according to the present invention are barium titanite (BATi0 _3), barium titanate (BaTi0), lead niobate (PbNbO _3), lead titanate (PbTiO), lead zirconate (PbZrO ₃ ), Lead zirconate titanate (“PZT” or PbZr _x Ti _y O ₃ ), or from one ceramic, or quartz (SiO ₂ ), lithium sulfate (Li ₂ SO ₄ ), lithium niobate (LiNbO ₃ ), or It is contemplated that it may include multiple piezoelectrically active materials made from piezoelectrically active single crystals such as zinc oxide (ZnO).

A plurality of piezoelectric multimorph actuators used in a plurality of devices in accordance with the present invention are one insulating material such as silicon dioxide (SiO ₂ ), quartz, silicon nitride (Si _x N _y ), or undoped silicon. It is similarly contemplated that one or more multimorph layers made from may be included. The presently discussed embodiment uses, for example, one such silicon dioxide armature layer as element (114).

  Conversely, multiple piezoelectric multimorph actuators used by multiple devices in accordance with the present invention may use multiple piezoelectrically active materials having a sensitivity that is different from that of other multiple multimorph layers. Is being planned. In other devices of the present invention, it is contemplated that one or both elements (113) and (114) may be composed of multiple layers of multiple materials having zero or non-zero multiple piezoelectric coefficients. It is rare.

The multiple material thicknesses of elements (113) and (114) may range from 0.5 μm to 1 mm depending on the application, material, other multiple actuator dimensions, and the fabrication technique used in manufacturing. It is intended. In devices according to the present invention for applications requiring low or very low signal loads and high or very high switching speeds, the thickness of elements (113) and (114) is 0. It is believed that it can range from 5 to 6 μm. It is contemplated that the thickness of elements (113) and (114) can range from 4 to 80 μm in one application that requires multiple medium multimorph actuator thicknesses and the accompanying multiple capabilities.
In consideration of low or very low switching speeds, certain embodiments of the present invention that require high forces for high or very high signal loads include elements (113) and ( It is further contemplated that 114) may require multiple actuators ranging in thickness from 50 μm to 1 mm. In devices according to the present invention using multiple piezoelectric multimorph actuators, the drive signal required for operation will be a single voltage difference across the thickness or width of the piezoelectric material. 1 and 3A show one possible configuration for a plurality of drive signal lines of one piezoelectric bimorph. In the illustrated embodiment, the plurality of drive signal lines are made on one region of the fixed base that protrudes above the flat surface of the base substrate. It is contemplated that in other devices according to the present invention, a plurality of drive signal lines may be created immediately above one electrically isolated region of the base substrate. FIG. 3A depicts drive signal connections (170) and (171) to the top and bottom surfaces of the piezoelectric material (113), respectively. These drive signal connections (170) and (171) are attached to the second (106) and first (105) drive signal lines, respectively. It can be easily seen in FIG. 1 that the upper first drive signal connection (170) extends from the second drive signal path to the piezoelectric bimorph material. The lower second drive signal connection (171) from the first drive signal path is not visible under the piezoelectric material.

  One armature latchdown electrode (115) is attached to the free end of the actuator armature and is nominally opposed to the substrate surface, and this electrode is first latched by one conductive first latch signal path (116). It is electrically attached to the signal line 107. Attached to the base substrate under the armature latchdown electrode is a base latchdown electrode (117), which is connected to the second latch signal line by one conductive second latch signal path (118). (108) is electrically attached. Similarly, attached to the free end of the actuator armature and nominally opposed to the cover substrate is a single armature latch-up electrode (142), which is a single conductive via the armature latch-down electrode. The first latch signal line (143) is electrically attached to the first latch signal line. Attached to the cover substrate over the armature latchup electrode is a cover latchup electrode (144), which is connected to the third latch signal line by one conductive second latch signal path (145). (141) is electrically attached.

  Since the latch-down signal and the latch-up signal are a plurality of voltage differences, the armature latch-down electrode, the base latch-down electrode, the armature latch-up electrode, the cover latch-up electrode, and the first, second and third All the conductive paths to the latch signal line are a plurality of electrical paths. As with other electrical paths, it can be envisioned that multiple conductors can be used to make the armature electrode and the base substrate electrode. Similarly, it is believed that the multiple material thicknesses of multiple armature electrodes and base substrate electrodes of multiple devices according to the present invention can range between 0.1 and 100 μm depending on the application and material as described above. It is done. The area of the plane of each latch electrode is expected to be between 25 μm and 25 mm 2. For some devices according to the present invention, it is contemplated that the planar area of each armature electrode will be at least half the planar size of the multimorph actuator in which the actuator electrode is located. It is contemplated that the area shape of the plurality of electrodes in a plurality of devices according to the present invention is a square, rectangle, circle, or some combination of a plurality of planar geometric figures.

  In devices with very small overall dimensions, such as devices that handle very low signal loads at very fast switching speeds, multiple armature latch electrodes, cover latch-up electrodes, and bases Each latch-down electrode will have a planar area between 25 and 500 μm 2. In devices with small overall dimensions, such as devices that handle multiple low signal loads at high switching speeds, the planar area of the multiple latch electrodes will be between 300 and 50,000 μm 2 each. It is further contemplated that in other devices of the present invention having a medium size, the planar area of the plurality of latch electrodes is between 30,000 μm 2 and 2 mm 2, respectively. It is envisioned that the area of each latch electrode can range from 1 to 25 mm 2 if one particular device requires large areas for electrostatic latch signal generation of approximately 1 mN or more.

  Multiple low resistance transmission lines, such as the gold load signal lines of the presently discussed embodiments, are generally not required for a single capacitive electrode. A large DC current is not required to create or dissipate a voltage across multiple capacitive electrodes. By eliminating the thick metal in unnecessary locations, the overall size and weight of the relay can be reduced to increase the switching speed. For the presently discussed embodiment, the rectangular area of each of the plurality of latch electrodes is 10,000 μm 2, which are made of 0.4 μm thick nickel as well as the latch and control signal lines. This nickel is the same as that preferably used as the plating plane for multiple gold load signal lines, which simplifies manufacturing.

  In the presently discussed embodiment of the present invention, one latch-down electrode is used to prevent electrical contact between the plurality of latch electrodes when the armature is deflected to the latch-down or latch-up state, respectively. It is contemplated that an insulator (119) and one latch-up electrode insulator (146) may be used. Since the latch signal is a differential voltage, such an electrical contact can result in a short circuit of this signal, which is one potentially destructive event. The plurality of latch electrode insulators are made from a plurality of insulating materials, where one insulating material is defined as one material having a resistivity of 10 ohm centimeters or more. The plurality of electrode insulators of this embodiment consist of a single layer of silicon nitride having a thickness of 0.1 μm because a plurality of high quality thin silicon nitride films can be utilized.

  In devices according to the present invention, the insulating materials that can be used for a single latch electrode insulator are undoped silicon, silicon nitride, silicon dioxide, quartz, polyimide, or other insulating polymers, etc. It is contemplated that a plurality of insulating microfabrication materials may be included. The material used for one latch electrode insulator is thinner than other material layers used in one device according to the present invention and can have a thickness in the range of 0.05 to 2 μm. That is being planned. It is envisaged that the material thickness of one latch electrode insulator in some devices with very low or medium actuator sizes can range between 0.05 and 0.4 μm. ing. One such range would be required in one application where multiple thin layers of multiple insulating materials are available and are of sufficient quality to prevent dielectric breakdown due to field strength. In some devices that have medium to very large actuator sizes and cannot utilize multiple thin layers of high quality insulating material, the thickness of one latch electrode insulator is 0.3. And 2 μm can be expected.

  In the presently discussed embodiment of the present invention, it is contemplated that the latch-down electrode insulator is attached to the top surface of the base latch-down electrode, and the latch-up electrode insulator is attached to the bottom surface of the cover latch-up electrode. It is being planned. In another apparatus according to the present invention, the latchdown electrode insulator can be attached to the lower surface of the armature latchdown electrode, and the latchup electrode insulator can be attached to the upper surface of the armature latchup electrode. It recognized. In other devices, it is contemplated that a plurality of latch electrode insulators can be mechanically attached in some way to a plurality of ends of the relay structure by suspending between a latchdown electrode pair or a latchup electrode pair. The plurality of electrodes and insulators need not be a single continuous film, such as a membrane, and if they are mechanically coupled to a fixed base, a single device in various devices. It is contemplated that holes, lines, or grid patterns may be made.

  The embodiment shown in FIGS. 1-5 features one second primary armature in its design, which is suspended from one region of the fixed base of FIGS. 1 and 2A. Load armature (159). Similar to the latch armature, this load armature is in the form of a cantilever with one area fixed (160) and one area deflected freely (161). In some devices according to the present invention, multiple layers of microfabricable materials such as silicon, silicon dioxide, silicon nitride, gallium arsenide, quartz, polyimide or other polymers, or metals are used. It is intended that multiple armatures can be constructed. The actuator armature of the discussed embodiment incorporates a layer of 8 μm thick silicon dioxide selected to provide a single insulating rigid armature structure consistent with microfabrication technology. Yes.

  As with the cantilever beam of the actuator signal armature, the thickness and length of one multimorph actuator armature is less than the width for one beam expected to deflect in one vertical direction perpendicular to the plane of the substrate. Important in design. The load armature of the discussed embodiment has a length of 180 μm and a width of 25 μm.

  A first armature contact element (120) is attached to the armature of FIG. 2A nominally at one location relative to the base substrate, which is connected to the first load signal by one first armature contact element path (121). It is electrically connected to the line. A second armature contact element (137) is mounted at one location nominally opposite the cover substrate, which is electrically connected to the fourth load signal line by one second armature contact element path (138). It is connected. In some devices in accordance with the present invention, the materials for the armature contact elements, conductive paths, and load signal lines are similar materials and thicknesses to facilitate manufacturing. In other devices according to the present invention, the armature contact elements are different from the plurality of conductive paths and load signal lines in order to improve the mechanical and electrical properties of the contacts themselves. It is planned to consist of In some devices, armature contact elements, conduction paths, and load signal lines are constructed of different materials and thicknesses for reasons related to improving performance or facilitating manufacturing. That is being planned. The first armature contact element path and the second armature contact element path in one preferred embodiment are made from one gold alloy with a thickness of 4 μm.

  The size of the plurality of armature contact elements in the plurality of devices according to the invention will have a total area between 0.5 μm 2 and 1 mm 2. The specific area shape is intended to be a square, circle, ellipse, or some non-standard geometric figure. In devices according to the present invention that can be used in applications with very low or low signal loads, the area of the armature contact elements will be between 0.25 and 30 μm 2. In devices that are more suitable for low or medium signal loads, the area of the armature contact elements will be between 20 and 3000 μm 2. In devices suitable for handling high or very high signal loads, it is further contemplated that the total area of the armature contact elements would be between 2,000 μm 2 and 1 mm 2.

  The performance requirements of the contact element may require the use of various material layers to provide mechanical wear characteristics superior to that of other electrical path materials used in one device according to the present invention. . In one device, such various layers may include multiple layers of hard metals such as nickel, tungsten, rhenium, rhodium or ruthenium below or above the nominal contact element surface. It has been argued. It is further contemplated that multiple armature contact elements can be made using multiple alloys or layered combinations of these metals and other low resistivity metals. In multiple devices according to the present invention, it is expected that each material used for multiple armature contact elements will have one thickness suitable for the application, which ranges from 0.1 to 100 μm. It is contemplated that the thickness of multiple armature contact elements can vary over its planar area, taking into account differences in element depth and shape for a given application and embodiment.

  It is contemplated that the material thickness of the armature contact element in devices according to the present invention suitable for very low or low signal load applications can range between 0.1 and 2 μm. Such contact elements would be lighter and thinner and have higher resistance than thicker paths of the same material and planar geometry. In one device suitable for low or medium signal loads, the material thickness of the contact elements can range between 0.5 and 10 μm, and other possible elements and paths of the same material It is envisioned that it will have a moderate mass and resistance. In other devices capable of switching multiple load signal powers that are high or very high, the material thickness of one contact element can range between 5 and 100 μm, with a plurality of thinner materials of the same material It is envisioned that it will have a high mass and low resistance compared to the elements of In the embodiment shown in FIGS. 1-5, the multiple contact elements are made of the same gold alloy used for the signal lines and provide a single wear resistant contact area to make the contacts reliable. For this purpose, a curved 0.5 μm rhenium overplate is added.

  It will be appreciated that the geometry of the plurality of contact elements, paths, and signal lines is not limited to the specific relative arrangement shown in FIGS. In some devices according to the present invention, it is contemplated that the conduction path may be attached to the top or bottom of the armature rather than traversing the center of the armature. Accordingly, a plurality of such relative arrangements exist in the second and third embodiments shown in FIGS. 6-10 and 11-13. In some devices, the multiple conduction paths can represent the majority of the armature material, unlike the depiction of FIG. 1A, suggesting that the conductor is less important than the other armature materials. . Conversely, in other devices, the mechanical properties of the armature conductor will not dominate the mechanical properties of the armature structure. One such design would be desirable because it is recognized that certain conductive materials are subject to prolonged unpleasant mechanical degradation. Similarly, it is contemplated that the plurality of armature contact elements are not limited to flat geometric shapes, but may include curved, stepped, or irregular shapes on the surface. .

  There is one base substrate contact element (122) facing the first armature contact element shown in FIG. 2A, which is electrically connected to the second load signal line by one conductive path (123). There is one cover substrate contact element (139) opposite the second armature contact element, which is electrically connected to the third load signal line by a conductive path (140). The base substrate contact element, the cover substrate contact element, the first and third load signal lines, and the plurality of conductive path geometries, materials and thicknesses are shown in FIGS. The embodiment should be considered in the same way as for multiple armature contact elements, first and fourth load signal lines and multiple conductive paths.

  Several elements present in FIG. 1 but not visible in the cross-sectional view of FIG. 2A or 3A are elements that define the contact armature (124) of the relay. The contact armature extends from one region rigidly coupled (125) to one main armature or armature electrode to one region that can be freely deflected (126). The functional value of this tight coupling and free region appears in the discussion of the cross-sectional configuration diagrams of FIGS. 5A, 5B and 5C. It is contemplated that the contact armature may be made from a predetermined single insulating material. In some devices according to the present invention, it is recognized that the contact armature may be the same material as the inert elements of the load armature or actuator armature. In one such device, it is contemplated that the contact armature is tightly coupled together with these elements.

  In devices according to the present invention, the insulating materials used for the contact armature include silicon, silicon nitride, silicon dioxide, quartz, or multiple microfabrication materials such as polyimide or other insulating polymers. The aim is to get. It is contemplated that the material used for a single contact armature may range from 0.3 μm to 1 mm in thickness depending on the material, the armature geometry, and the relay application. In devices designed for very low or low signal loads, it is contemplated that the material thickness of a single contact armature may range between 0.3 and 8 μm. In devices designed for low or medium signal load applications, it is contemplated that the material thickness can range between 4 and 80 μm. In devices that should be used in applications that require a hard and thick contact armature, such as for medium or high signal loads, the material thickness is between 50 and 300 μm. It can span. In other devices having multiple large planar dimensions and designed for high or very high multiple signal load applications, the material thickness can range between 200 μm and 1 mm.

  It is contemplated that the size of the plurality of planar dimensions of the contact armature is less than or equal to the size of the load signal armature and the multimorph actuator armature. The number of such planar dimensions ranges between 2 μm and 5 mm for each of width and length depending on the application, material thickness, and contact force required for the latched relay. It is rare. In devices according to the present invention in which very low or low signal loads must be switched at multiple fast switching speeds, the planar dimensions can range between 2 and 20 μm. In devices where low or medium signal loads are switched, it is contemplated that the planar dimensions can range between 10 and 200 μm. In other devices for multiple applications that switch medium or high multiple signal loads at multiple low speeds, it is believed that the planar dimensions may range between 100 μm and 1 mm. For larger devices that switch high or very high signal loads at slow or very slow speeds, the planar dimensions can range between 0.5 and 5 mm. As in the case of load signal armatures, these ranges apply not only to elements of a rugged rectangular design, but also to elements whose one or more dimensions vary by a linear or non-linear function. It is being planned.

  The contact armature of the embodiment shown in FIGS. 1-5 is a 100 μm wide silicon dioxide beam, which is 100 μm long and 6 μm thick. One such device can provide the operational performance required for moderate power handling capability at moderate speeds, and the piezoelectric multimorph actuation and electrostatic latching mechanism can be connected to the multiple contacts. Mechanically coupled to the force required by itself.

  FIG. 4 is a cross-sectional block diagram of one of the devices shown in FIG. 1, showing the portion of the relay incorporating the multimorph actuator. A base substrate (102) and a cover substrate (134), a plurality of portions of a fixed base are present in this view, and the armatures of FIGS. 2A and 3A are suspended between these substrates. In the presently discussed embodiment of the present invention, the multimorph of FIG. 4 can be considered a single piezoelectric multimorph actuator. The actuator includes a top piezoelectric material (113) having a plurality of electrical connections of an upper first drive signal connection (170) and a lower second drive signal connection (171) to the top and bottom surfaces, respectively.

  In the presently discussed embodiment, the lower material (114) may be piezoelectrically neutral. An electrical connection (116) of the armature electrode is attached to the bottom surface of the lower material (114). It is recognized that in other devices according to the present invention, the armature electrode can be attached to the center or top of the lower material. The electrical connection (121) of the first armature contact element is shown in FIG. 4 as is the electrical connection (138) of the second armature contact element. It is recognized that each of the plurality of electrical connections can be on any insulated surface with any desired geometry in various devices. The materials, thicknesses and compositions of the electrical paths and multimorph actuators can likewise be freely varied within the scope of the present invention as discussed in the detailed description of FIGS. 1, 2A and 3A.

  FIGS. 5A, 5B and 5C show cross-sectional block diagrams of the relay embodiment shown in FIGS. 1-5, which are drawn in the free region of the main armature system. It is recognized by those skilled in the art that this region can be an important part of relay design because it incorporates multiple contact elements that conduct electricity when the relay is in a closed state. A base substrate (102) and a cover substrate (134), a plurality of parts of a fixed base are shown, and a contact armature (124) is nominally suspended between these substrates. A contact armature is attached (125) to the latch armature at the armature latchdown electrode (115) and the armature latchup electrode (142). The contact armature has one free end (126) in which the first armature contact element (120) and the second armature contact (137) are located. The base substrate electrode (117) and the cover substrate electrode (144) are opposed to the armature latch-down electrode and latch-up electrode, respectively. The base substrate electrode and the cover substrate electrode are shown with attached latch down (119) and latch up (146) electrode insulators. The base substrate contact element (122) is on the top surface of the base substrate and is opposed to the first armature contact element, and the electrical connection (123) of the first armature contact element extends to the center of the armature. The cover substrate contact element (139) is on the bottom surface of the cover substrate and is opposed to the second armature contact element, and the electrical connection (138) of the second armature contact element extends into the armature. The bending function of the contact armature is shown in FIGS. 5B and 5C, which is the same cross-section as in FIG. 5A except that the relay is in a closed and latched state rather than in one passive state. These conditions are discussed in more detail next. Contact armatures typically generate a single bending spring force that forms part of the contact force between a plurality of armature contact elements and a base or cover substrate contact element. FIG. 5B shows bending in the contact armature when the relay is in the latched down state, and FIG. 5C shows the relay in the latched up state. The initial gap between the plurality of latch electrodes (and electrode insulators) is greater than the original gap spacing between the plurality of contact elements, and this difference must be deflected by the contact armature spring when the relay is closed. It is a quantity. In some devices according to the invention, the contact armature spring force is intended to be the total contact force between the contact elements. In other devices according to the present invention, it is further contemplated that the contact armature produces only a portion of the total contact force between the contact elements. In still other devices, the contact armature may provide very little or no total contact force between the contact elements.

  The first stable operating state of the relay shown in FIGS. 2A, 3A and 5A is defined as a passive state, which is the state of the relay when no control signal is applied to the device. This is considered to be a natural state and the stability of the device is determined by the mechanical geometry of a given relay and a number of configuration details. 2A, 3A, and 5A are representative of a load armature, a latch armature, and a contact armature in a passive state for a plurality of devices designed according to the present invention, including the presently discussed embodiments. Several examples are provided (each). In these examples, the relay contact elements are not engaged, the multimorph actuator is in a nominally neutral stress balance, and all latch electrodes are separated. In other devices according to the present invention, it is contemplated that the multimorph actuator armature or load signal armature may not be nominally flat but may curl upward when in a passive state. In still other devices, it is contemplated that when in the passive state, the multimorph actuator armature or load signal armature may not be nominally flat but curled downward.

  If one relay state different from the passive state is desired, one drive down control signal can be applied to the relay actuator. One example of the multiple results of one such procedure is a single stable state defined as a first active state in which multiple mechanical constraints of the device result in further deflection of multiple relay armatures. To prevent. In some devices of the present invention, the first active state may be represented by the diagrams of FIGS. 2B and 3B, where the multimorph actuator of FIG. 3B is curled down one by a drive control signal. This embodiment so that some or all of the downward curvature induced in the latch armature can be coupled to the load signal armature and bent to a point where it engages the first actuator contact element and the base substrate contact element. The plurality of armatures of FIGS. 2B and 3B are considered to be mechanically coupled. It is recognized that intimate contact of the armature latchdown electrode with the latchdown electrode insulator of the base substrate electrode is not necessary for the definition of the first active state. Such contact may be possible and is illustrated in the embodiment of FIG. 3B, and it is further contemplated that such contact may not occur in one different embodiment of the present invention.

  If the operating state of the relay changes from passive contact opening to the first active contact closing, in many applications, the contact is kept closed for a period that may be an indefinite period. It is recognized that may be desirable. One additional relay state, defined as the first latched state, adds one latchdown control signal between the capacitive elements of the armature latchdown electrode and the base substrate electrode to attract them. Starting with a plurality of electrostatic forces. In many devices in accordance with the present invention, one such treatment is believed to result in the armature electrode being flattened and the closed contact maintained. The embodiment shown in FIG. 3C reflects one such situation, where the planarization of the armature electrode is reflected in one planarization of the load signal armature.

  The first latched state provides for removal of the drive down control signal from the actuator and the relay remains in the first latched state. In some devices, including the presently discussed embodiments, it is believed that the relay can be returned to a passive state by later removing the latch control signal. In a plurality of devices, the return to the passive state is performed by a plurality of restoring forces inherent in the plurality of armatures themselves. In other devices, it is believed that forced help from one multimorph actuator by using one drive up control signal will help the relay return to the passive state.

  The first active state and the first latched state for the embodiment depict one closed electrical contact path for the device. The present invention is for one double throw device, with additional multiple relay states provided in one second closed electrical path. One drive up control signal can be applied to the relay actuator to close the second electrical path. The result of such one process is a stable state defined as a second active state, where the mechanical constraints of the device prevent further deflection of the relay armatures. . In some devices in accordance with the present invention, the second active state can be represented by the diagrams of FIGS. 2D and 3D, where the multimorph actuator of FIG. 3D curls in one upward direction in response to the drive up control signal. ing. The downward curvature induced in the latch armature is assumed to be mechanically coupled to the load signal armature and deflect it to a point of engagement with the second actuator contact element and the cover substrate contact element. . As in the case of the first active state, intimate contact between the armature latchup electrode and the latch-up electrode insulator of the base substrate electrode is deemed unnecessary for the definition of the second active state, but such contact. Is possible and is shown in the embodiment of the invention of FIG. 3D.

  One additional relay state, defined as the second latched state, applies a single latch-up control signal to the armature latch-up electrode and the plurality of capacitive elements of the cover substrate electrode to attract them. Start by combining them with the electrostatic force of. In many devices according to the present invention, such a procedure is believed to result in the armature electrode being flattened to maintain a closed contact. The embodiment shown in FIG. 3E reflects one such situation, where the planarization of the armature electrode is reflected in the planarization of the load signal armature.

  The second latched state provides for removal of the drive up control signal from the actuator, and the relay remains in the second latched state. In some devices, including the presently discussed embodiments, the relay can be returned to a passive state by later removing the latch control signal. In some devices, the return to the passive state is performed by the multiple restoring forces inherent in the multiple armatures themselves. In other devices, it is believed that forced help from one multimorph actuator by using one drive down control signal will help the relay return to the passive state.

  In some devices according to the present invention, the piezoelectrically actuated armature of the embodiment shown in FIGS. 1-5 may be composed of two or more multimorph materials having a single non-zero piezoelectric coefficient. In one such device, each of the plurality of non-zero coefficient materials may be a layer made from one or more materials of the plurality of piezoelectric ceramics or crystals. In one such multimorph actuator, the upper piezoelectric material can expand when the lower side contracts. One such multimorph can produce twice the force that can be obtained with one particular device design given a fixed total actuator armature thickness.

  It has been observed that multiple multimorph actuators having one or more piezoelectric layers can be used to generate multiple opening forces as well as the multiple closing forces suggested in FIG. 3B. In some devices according to the present invention, a plurality of opening forces of a multimorph in a first latched (down) state, a drive down control signal is reversed and the reverse is a drive (up) control. It can be achieved by adding it as a signal. The ability to drive one actuator in either direction based on the polarity of the control signal is generally accepted as one advantage of piezoelectric multimorphs. This advantage also exists in a plurality of piezoelectric multimorph devices according to the present invention.

  Figures 1-5 depict the structural elements required for one embodiment featuring one piezoelectric bimorph actuator structure that drives one contact armature. It is contemplated that the present invention is intended to take into account the functional concept of any relay driven by one multimorph actuator having multiple electrostatic latching mechanisms. Additional embodiments in which the multimorph is constructed from one different actuator material combination or a relay is constructed from multiple contact armatures, actuator armatures, or both are within the scope of the present invention. 6-10 shows one second embodiment having one operation that is functionally equivalent to that of the first embodiment shown in FIGS. 1-5. One plan view is provided in FIG. 6, and FIGS. 7-10 also illustrate a plurality of cross sections in detail. The plurality of element numbers for this second embodiment starts with 200 instead of 100, and the latter two numbers refer to functional equivalents from the first embodiment for clarity.

  FIG. 6 is a functional plan configuration diagram of one relay having two main armature structures like the relay of FIG. Although the elements of FIG. 6 are believed to be similar to that of FIG. 1, there are differences with respect to the geometry and material selection for the actuator components and equivalent elements of this embodiment. As in the case of the illustrated embedded elements of FIG. 1, for the sake of clarity, the cover substrate has been removed, and the outlines of the elements that are not normally visible from above are indicated by broken lines. The specific geometry and location of the signal lines and paths is left to the designer's decision and is depicted in the provided embodiments for illustrative purposes. As mentioned above, it is contemplated that the material, thickness, and composition of the electrical path can be freely changed within the scope of the present invention.

  Fixed base (201), base substrate (202), cover substrate (234), first load signal line (203), second load signal line (204), third load signal line (235), first drive The signal line 205, the second drive signal line 206, the third drive signal line 255, the fourth drive signal line 256, the first latch signal line 207, and the second latch signal line 208. The elements of the third latch signal line (241) and the fourth latch signal line (285) are clear as in FIG. A latch armature (209) is shown, with one end fixed (210) and one end (211) deflectable in a direction perpendicular to the base substrate. The load armature (259) is similarly shown with one end (260) fixed and one end (261) deflected. One actuator latch-down electrode (215) and actuator latch-up electrode (242) can be seen, and the required actuator latch-down electrode path (216) and the actuator latch to the first and fourth latch signal control lines, respectively. A latch-up electrode path (242) can also be seen. In the presently discussed embodiment, the actuator latch electrode path is directed from the armature to the base substrate by a single metal anchor region, which in some devices is a solder bump or other conductive feature. Note that it can be a mechanical and electrical connection. A substrate latch electrode (217), a cover latch electrode (244), and paths (218) and (245) from these to the second and third latch control signal lines, respectively, can also be seen in FIGS. 6 and 8A. it can. FIG. 8A shows that this embodiment has a latch-down electrode insulator (219) and a latch-up electrode insulator (246) covering the substrate latch electrode and the cover / latch electrode, respectively.

  There is a first actuator contact element (220) and a first actuator contact element path (221) to the first load signal line, also an electrical connection (223) from the substrate contact element (222) to the second load signal line. ) Is also present. In this embodiment, the first actuator contact element path is made from the armature to the base substrate by one metal anchor region, similar to that discussed for the latch electrode path. There is a second actuator contact element (237) and a second actuator contact element path (238) to the first load signal line, also an electrical connection from the substrate contact element (239) to the third load signal line (235). (240) also exists. In this embodiment, the second actuator contact element path comprises a via that electrically couples both actuator contact elements from the second actuator contact element to the first actuator contact element. The load armature (224) is attached to the plurality of latch electrodes at one end (226) and can be freely deflected (225) in the region of the armature contact element.

  The specific materials and geometry for this embodiment have been selected to design one device that can handle very low load signal power at multiple fast switching speeds. The load armature is made of silicon nitride with a thickness of 2 μm with a planar width and length of 15 μm and 75 μm, respectively. The load signal path and the plurality of contact elements are composed of 2 μm sputtered gold. The fixed base portion attached to the fixed ends of the armature is a section of a silicon handle wafer, which is a ceramic through a gold-platinum and solder connection. -Bonded to the base substrate. The plurality of conductors on the base substrate are all gold having a thickness of 2 μm. The latch electrode insulator is 0.2 μm silicon nitride.

  Although the actuator shown in FIG. 3A is a piezoelectric bimorph, the multiple main actuators for this embodiment are multiple thermal multimorphs. The latch armature thermal multimorph is composed of two main bimorph elements, one upper thermal multimorph layer (227) and one lower thermal multimorph layer (228). In this actuator of this embodiment, the upper thermal multimorph layer is designed to have one large coefficient of thermal expansion. The load armature's thermal multimorph consists of two main bimorph elements, one upper thermal multimorph layer (278) and one lower thermal multimorph layer (280). The layer is designed to have one large coefficient of thermal expansion. The latch armature actuator curls the relay down and the load armature actuator curls the relay up.

  The use of multiple metals, multiple materials, for multiple thermal multimorph layers that require multiple large coefficients of thermal expansion is typical for those skilled in the art of thermal multimorph structures. is there. It is further recognized that it is typical to use multiple insulators for multiple thermal multimorph layers that require a small coefficient of thermal expansion. The plurality of multimorphs of the presently discussed embodiment includes one 2 μm thick palladium for the upper multimorph layer (227) of the latch armature and one for the lower multimorph layer (280) of the load armature. Features two 2 μm thick gold and one 2 μm thick silicon nitride for opposing layers (228) and (278).

  In some devices according to the present invention, multiple metals can be used for multiple layers (227) and (280), and multiple insulators can be used for multiple layers (228) and (278). It is intended to be used. In some devices, the plurality of materials that can be used for the plurality of thermal multimorph materials include a plurality of metals such as gold, copper, silver, platinum, nickel, and aluminum. In some devices, the materials that can be used for any layer include semiconductors such as silicon, gallium arsenide, silicon germanium, and indium phosphide. It is also contemplated that any alloy or layering combination of metals or semiconductors may be used in devices according to the present invention. It is further contemplated that multiple materials that can be used for multiple thermal multimorph materials include multiple insulators such as silicon, silicon nitride, silicon dioxide, quartz, or polyimide or other insulating polymers. . It has also been recognized that each multimorph layer can be composed of one stack of multiple layers to incorporate a particular plurality of properties into one actuator.

  It is contemplated that multiple thicknesses of multiple thermal multimorph actuator layers can range from 0.1 to 500 μm depending on the material, multiple manufacturing processes, applications, and other elemental geometries. In some devices according to the invention capable of switching very low or low signal loads at high or very high switching speeds, the thickness of the multimorph layers ranges from 0.1 to 3 μm. It is thought to get. In one application that requires low or medium multiple signal loads at high or medium multiple switching speeds, it is contemplated that the thickness of multiple multimorph layers can range from 2 to 30 μm. Multiples required in multiple applications that require medium or heavy multiple signal loads at moderate or slow multiple switching speeds and can use multiple multimorph layers between 20 and 200 μm thick It is further contemplated that some devices may require thicker multimorph actuators. It is contemplated that the thickness of multi-morph layers can range between 150 and 500 μm, with multiple applications of high or very high signal loads switching at slow or very slow speeds. It has been recognized that the thicknesses or thickness ranges of the multi-morph layers need not be the same for different layers.

  FIG. 8A includes one block diagram of a cross section of one first heating element (229), and FIG. 7A includes one second heating element (279). In some devices, it is contemplated that one such element may be a small amount of resistive conductor in one path on the surface of one insulating layer. In the presently discussed embodiment, the heating element is made from a single 0.3 μm thick nickel-chromium alloy. In some devices according to the present invention, it is contemplated that one heating element may be made from one material having one resistivity between 0.001 and 10 ohm-cm. In some devices, one heating element can be composed of one metal or semiconductor material. It is believed that the thickness of one resistive heating element in one device can range between 0.05 and 10 μm. In some devices where the resistive material can have a resistivity of less than 0.1 ohm-cm, the thickness is contemplated to be between 0.05 and 2 μm thick. It is further contemplated that in some devices that include a resistive material having a resistivity greater than 0.1 ohm-cm, the thickness may be between 0.5 and 10 μm. Yes.

  A heating element insulator (230) is shown in FIG. 8A, which, in the presently discussed embodiment, electrically isolates the heating element from one conductive multimorph layer. If the upper thermal multimorph layer (227) is composed of one metal in one device according to the present invention, one insulating layer insulates the heating element (229) from the layer (227) and the heating element is suitable. It is recognized that it will be possible to work. The currently discussed embodiment considers that the upper thermal multimorph layer (227) is conductive and thus benefits from being insulated from the heating element. The depicted embodiment also contemplates that the lower multimorph layer (228) is insulative and thus can be adjacent to the heating element without interfering with proper operation of the heating element. Similarly, in the presently discussed embodiment, the load armature's multimorph layer (278) is insulative and can therefore be adjacent to the second heating element (279).

  One heating element insulator will be made from one insulating material as previously defined for the latch electrode insulator. In some devices according to the present invention, it is contemplated that possible materials that can be used to make the heating element insulator include silicon nitride, silicon dioxide, quartz, or polyimide or other insulating polymers. ing. The material used for one heating element insulator is thin compared to some other material layers used in the fabrication of one particular device, and ranges from 0.05 to 3 μm. It is planned to have. It is contemplated that the material thickness of one insulating element in one device can range between 0.05 and 0.5 μm. One such range would be desirable for one application where multiple thin layers of multiple insulating materials are available and are of sufficient quality to prevent one breakdown of the dielectric due to field strength. . The heating element insulator of this embodiment is a high quality silicon nitride of 0.1 μm. In other devices where multiple thin layers of high quality insulating material cannot be utilized, it is contemplated that the material thickness of one latch electrode insulator can range between 0.3 and 3 μm. .

  FIG. 9 is a cross-sectional block diagram of one of the devices shown in FIG. 6, showing the portion of the relay that incorporates the multimorph actuator. A base substrate (202) and a cover substrate (234) that are part of a fixed base are present in this view, and the armatures of FIGS. 7A and 8A are suspended between these substrates. In the presently discussed embodiment of the present invention, the plurality of actuators are a plurality of thermal multimorphs. The latch armature actuator includes a single top thermal multimorph layer (227), showing a plurality of heating element electrical connections for a first drive signal connection (270) and a second drive signal connection (271); Each forms part of the first heating element itself and is surrounded by a heating element insulator (230). The lower thermal multimorph layer (241) is the same material as the actuator armature (209), and the actuator latch electrode path (216) is shown on the bottom of the armature. A load signal path (221) is also shown on the bottom surface of the load armature and acts as a lower thermal multimorph layer. The actuator of the load armature incorporates the heating element electrical connections of the third drive signal connection (255) and the fourth drive signal connection (256) shown, each forming part of the heating element itself. Multiple drive signal paths are fabricated from 0.3 μm nickel-chromium alloy of heating elements, latch signal paths are fabricated from one 0.2 μm nickel layer, and load signal paths are fabricated from one 2 μm sputtered gold layer. Is done.

  10A, 10B and 10C show cross-sectional views of the relay taken from the free region of the latch armature and load armature. In this region are incorporated a plurality of contact elements that conduct electricity when the relay is in the closed state. There are a base substrate (202) and a cover substrate (234) which are a plurality of parts of the fixed base, and a contact armature (224) is suspended between these substrates. The contact armature is attached to the latch armature (225) at the location of the armature latchdown electrode (215) and latchup electrode (242) and has one free end (226), where the first armature A contact element (220) and a second armature contact element (237) are located. Opposed to the armature latchdown electrode is a base substrate electrode (217) and an attached latchdown electrode insulator (219). Opposed to the armature latchup electrode is a cover substrate electrode (244) and an attached latchup electrode insulator (246). The base substrate contact element (222) is located on the upper surface of the base substrate and is opposed to the first armature contact element. The cover substrate contact element (239) is located on the bottom surface of the cover substrate and is opposed to the second armature contact element. The bending function of the contact armature is illustrated in FIGS. 10B and 10C, which depict the same cross section as FIG. 10A, except that the relay is in a closed and latched state rather than in one passive state. These conditions are discussed in the detailed description of FIGS. 5A, 5B and 5C.

  FIG. 11 is a functional plane configuration diagram illustrating one third embodiment, in which the relay is configured by three main armatures instead of two in the case of the plurality of first embodiments. Yes. The relay of FIG. 8 is designed such that the plurality of actuator armatures are perpendicular to the load signal armature. In one particular device design, the configuration for multiple parallel or vertical actuator armatures, and the specific number of each armature, is left to the one of ordinary skill in the art for various materials, geometries, and applications. It is recognized as a feature. 12 is a cross-sectional block diagram of one of the relay embodiment load armatures shown in FIG. 11 in one passive open state. 13A, 13B, and 13C depict multiple cross-sections of the multi-morph actuator and contact armature of the embodiment. For clarity, the element number for this third embodiment begins with 300, and the latter two numbers refer to a plurality of functional equivalents from the first and second embodiments.

Although the elements of FIG. 11 are believed to be similar to those of FIGS. 1 and 6, there are differences in the geometry and material options for the actuator components and the equivalent elements in this embodiment. . As in the case of the illustrated multiple elements of FIGS. 1 and 6, the cover substrate has been removed, and for the sake of clarity, the outlines of the elements that are not normally visible from the top are shown by multiple dashed lines. Has been.

The specific geometry and location of the signal lines and paths is left to the designer's decision and is presented for illustrative purposes in the embodiments provided herein. As described above, the thickness and composition of the plurality of electric paths can be freely changed within the scope of the present invention.

  Fixed base (301), base substrate (302), cover substrate (334), first (303), second (304) and third (335) load signal lines, first (305), second (306), third (355) and fourth (356) drive signal lines, and first (307), second (308), third (357), fourth (358), fifth (241) , And a plurality of elements of a sixth (291) latch signal line are shown. A close-down actuator armature (309) is shown, one end of which is fixed (310) and one end (311) can be deflected in a direction perpendicular to the base substrate. A load armature (359) is shown perpendicular to the closed actuator armature, one end of which is fixed (360) and one end (361) can be deflected perpendicular to the substrate. The close-up actuator armature (389) is seen relative to the close-down actuator armature and reflects one fixed end (390) and a free end (391).

  The multiple armatures for the illustrated embodiment are designed to carry a single large load signal at multiple slow switching speeds. The main material for the armatures is a single crystal silicon layer with a thickness of 12 μm. The load armature has a width of 200 μm and a length of 800 μm. The plurality of actuator armatures have a width of 250 μm and a length of 650 μm. The plurality of load signal lines and paths are fabricated from one thick copper alloy with a thickness of 8 μm. The control signal and latch signal lines and paths are fabricated from a sputtered nickel-chromium alloy having a thickness of 2 μm.

  Two actuator latchdown electrodes (315) and (365) are seen, one on the bottom of the close-down actuator armature and one second on the bottom of the close-up actuator armature, respectively. . The required latch electrode paths (316) and (366) to the first (307) and third (357) latch signal control lines, respectively, are clearly visible. The substrate latchdown electrode paths (318) and (378) of the substrate latchdown electrodes (317) and (367) to the second and fourth latch control signal lines, respectively, can be seen in FIG. The first actuator contact element (320) and the load signal path (321) to the first load signal line can be clearly seen in FIG. A load signal path (338) to the first load signal line via the second actuator contact element (337) and the first actuator contact element is also shown in FIG. There is a board contact element path (323) from the board contact element (322) to the second load signal line, and similarly a cover contact element path (340) from the cover contact element (339) to the third load signal line (235). Is also present.

  Since the relay depicted in FIGS. 11-13 is a dual actuator design, there are multiple contact armatures. A close-down actuator contact armature (324) is attached to the plurality of latch electrodes at one end (326) and can be deflected (325) in the region of the plurality of armature contact elements. A close-up actuator contact armature (374) is attached to the plurality of latch electrodes at one end (326) and can be deflected (325) in the region of the plurality of armature contact elements. The close-down actuator consists of one inflatable upper thermal bimorph layer (327) and one lower layer with material and geometry considerations similar to the thermal multimorph clearly shown in FIG. 13A of the previous embodiment. It is composed of a side thermal bimorph layer (328). The drive up actuator is composed of one inflatable lower thermal bimorph layer (377) under one upper thermal bimorph layer (378). The plurality of layers (328) and (378) are composed of the same nominal armature material layer for the embodiment depicted in FIGS.

One resistive first heating element (329) provides a way to heat the closed bimorph actuator with one control signal consisting of one current. As with the first heating element (229) previously discussed for the embodiments of FIGS. 6-10, such an element has one resistance on the surface of one first heating element insulator (330). It may be a winding path of sex. It is further contemplated that the materials and thicknesses for such elements would be similar to those discussed for previous embodiments. One second heating element (379) provides one way to heat the drive up bimorph actuator in one manner similar to that described for the second heating element of the previous embodiment. This element is electrically insulated by one second heating element insulator (380).
It has been observed that the fixed beams of the two thermal bimorph actuators provide a tight range of motion compared to a single cantilever configuration.

  FIG. 13A is a cross-sectional block diagram of one embodiment of the thermal bimorph actuator relay embodiment depicted in FIG. 11, wherein the elements are as in FIGS. 11 and 12, and the actuation and latch signals are One neutral state that has not been added. In the presently discussed embodiment, it is recognized that the two multimorph actuators operate in a plurality of opposite directions. In this embodiment, the close-down actuator deflects the armature contact element in one downward direction when a close-down control signal is applied, and the close-up actuator is applied when a close-up control signal is applied. And deflected in one upward direction perpendicular to the base substrate.

  The plurality of relay states of the embodiment illustrated in FIGS. 6-10 were the same as that of the first embodiment of FIGS. 1-5. As in the previous embodiment, FIG. 13B is a cross-sectional block diagram of one device in a stable first active state, where multiple mechanical constraints of the device prevent further armature deflection. . The closed actuator of FIG. 13B curls in one downward direction from the close-down control signal, but is severely constrained by the state of the fixed beam and the bending force of the multiple contact armatures. In this embodiment, a portion or all of the downward curve induced in the actuator armature can be coupled to the load signal armature and deflected to a point that engages the actuator contact element and the base contact element in FIG. And 3A armatures are considered to be mechanically coupled. Although it is recognized that contact of the first armature electrode with the latched-down electrode insulator of the base substrate electrode is not required, such contact is illustrated in FIG. 13B.

  The first latched state for this embodiment is initiated by applying one latch control signal to both pairs of latch electrodes and attracting them to couple them with multiple electrostatic forces. The In many devices according to the present invention, it is believed that as a result of this action, the armature electrode is flattened and a closed contact is maintained. The embodiment illustrated in FIG. 13C reflects one such situation. The first latched state allows for the removal of the drive control signal from the actuator and the relay remains in the first latched state.

  In some devices, it may be possible to return the relay to a passive state by later removing the latch control signal due to the restoring forces inherent in the armatures themselves. In some other devices, including the presently discussed embodiments, it is believed that forced help from a close-up actuator can help return the relay to a passive state. The second active state and the second latched state are not illustrated for the sake of brevity. These states may be achieved in a manner similar to that described for the previous embodiment illustrated in FIGS.

  It should be understood that various changes and adjustments to the present embodiments will be apparent to those skilled in the art. Multiple changes and adjustments as described above can be made without changing the scope of the invention and without diminishing the advantages associated with the invention.

It is one functional top view of one embodiment of the present invention. FIG. 6 is a plan view with a cover removed to expose multiple actuator elements of one exemplary embodiment. FIG. 6 is a plan view with a cover removed to expose multiple actuator elements of one exemplary embodiment. FIG. 6 is a plan view with a cover removed to expose multiple actuator elements of one exemplary embodiment. FIG. 6 is a plan view with a cover removed to expose multiple actuator elements of one exemplary embodiment. FIG. 6 is a plan view with a cover removed to expose multiple actuator elements of one exemplary embodiment. A load armature when the relay is in a passive state. Fig. 4 shows the curvature induced in the load armature when one relay is driven into one active down state. Fig. 4 shows one curvature induced in a relay load armature when in a latched down state. The curvature of the load armature when one relay is driven into the active up state. Fig. 4 shows one curvature induced in a relay load armature when in a latch-up state. Actuator armature when the relay is in a passive state. Fig. 4 shows the curvature induced in the actuator armature when one relay is driven into one active down state. Fig. 5 illustrates one possible curvature of the armature electrode contact that is induced in the actuator armature when the relay is latched down. Fig. 4 shows the curvature induced in the actuator armature when one relay is driven into one active up state. Fig. 5 illustrates one possible curvature of the armature electrode contact that is induced in the actuator armature when the relay is in the latched up state. 1 is a cross-sectional block diagram of one of a plurality of armatures in the region of one multimorph actuator, showing the relationship between a plurality of electrical connections. FIG. Fig. 5 shows a cross section of a relay area with latching and contact mechanism in open relay Fig. 5 shows a cross section of a relay region with latching and contact mechanisms in a closed-down relay state. Fig. 4 shows a cross section of a relay region with latching and contact mechanisms in a closed-up relay state. FIG. 2 is a functional plan view of one embodiment using one thermal multimorph as one main actuator. A load armature when the relay is in a passive state. Fig. 4 shows the curvature induced in the load armature when one relay is driven into one active down state. Fig. 4 shows one relay curvature induced in a load armature in the latched down state. Fig. 4 shows the curvature induced in the load armature when one relay is driven into one active up state. Fig. 4 illustrates one curvature induced in a relay load armature when in a latched up state. Actuator armature when the relay is in a passive state. The actuator armature is shown when the relay is driven into the active down state. Fig. 6 shows one curvature induced in an actuator armature when in a latched-down relay state in armature electrode contact. Fig. 5 shows the actuator armature when the relay is driven into one active up state. Fig. 6 illustrates one possible curvature induced in an actuator armature when in a latched-up relay state in armature electrode contact. FIG. 3 is a cross-sectional configuration diagram of one of a plurality of armatures in a region of one multimorph actuator. Fig. 5 shows a cross section of a relay region where the latching and contact mechanism is in the open relay state. 2 shows a cross section of a relay region in a closed-down relay state. 2 shows a cross section of a relay region in a closed-up relay state. One relay in 3rd Embodiment comprised by a some actuator armature structure is shown. 1 shows one cross-sectional configuration of a load armature of the present embodiment. The actuator armature is shown when the relay is in a passive state. Fig. 4 shows the curvature induced in the actuator armature when the relay is driven into the active down state. Fig. 5 illustrates a plurality of actuator armatures when in a latched down state.

Claims (20)

A micro-fabricated relay,
One substrate,
A cover located on the substrate;
A base attached to the substrate;
A plurality of load signal lines including one first load signal line, one second load signal line, and one third load signal line;
A plurality of control signal lines including one first drive signal line, one second drive signal line, one first latch signal line, and one second latch signal line;
With one composite armature structure including one latch armature structure,
The composite armature structure is a single latch armature structure,
One anchor region attached to the base;
One including one first region attached to the anchor region, one passive position, one lower latched position, and one second region movable between one upper latched position And a latch deflection region, wherein the latch deflection region is
One first material that changes size by one first amount in response to one first stimulus and changes size by one third amount in response to one second stimulus;
A second material that changes size by one second amount in response to the first stimulus and changes size by one fourth amount in response to the second stimulus; and
The first amount and the second amount are not equal and apply a first deflection force to the latch deflection region in response to the first stimulus, the first deflection force causing the second region to move to the passive position. To move from the lower latched position to
The third amount and the fourth amount are not equal, and in response to the second stimulus, one second deflection force is applied to the latch deflection region, and the second deflection force causes the second region to be passively applied A latch armature structure that helps to move from position to the upper latched position;
A first latch electrode located on a portion of one lower surface of the second region of the latch deflection region and electrically connected to the first latch signal line;
A second latch electrode formed on the substrate under the first latch electrode and electrically connected to the second latch signal line;
A first latch electrode insulator that prevents electrical contact between the first latch electrode and the second latch electrode when the second region of the deflection region is in the lower latched position;
A third latch electrode located on a portion of one upper surface of the second region of the latch deflection region and electrically connected to the first latch signal line;
A fourth latch electrode formed on the lower surface of one of the covers generally over the third latch electrode and electrically connected to the third latch signal line;
A second latch electrode insulator that prevents electrical contact between the third latch electrode and the fourth latch electrode when the second region of the deflection region is at the upper latched position; A latch electrode insulator;
One means for selectively applying the first stimulus or the second stimulus to the latch deflection region;
With one load armature structure,
The load armature structure is
One anchor region attached to the base;
A coupling region coupling the load armature structure to the latch armature structure;
One including a first region attached to the anchor region and a second region movable between an open position, a lower closed position and an upper closed position; A contact deflection area, wherein the lower closed position is established when the second area of the latch deflection area is at the lower latched position, and the upper closed position is the first position of the latch deflection area. A contact deflection area established when two areas are in the upper latched position;
One first contact electrode formed on a portion of one lower surface of the second region of the contact deflection region;
One second contact electrode formed on the substrate under the first contact electrode, wherein the first contact electrode and the second contact when the contact deflection region is in the lower closed position A second contact electrode that is in electrical contact with the electrode, and wherein the contact deflection region moves relative to the latch deflection region;
A third contact electrode formed on a portion of one upper side surface of the second region of the contact deflection region;
One fourth contact electrode formed on one lower surface of the cover above the third contact electrode, wherein the third contact electrode and the fourth contact electrode have the contact deflection region on the upper side. A microfabricated relay comprising: a fourth contact electrode that is electrically contacted with one second contact force when in the closed position, and wherein the contact deflection region moves relative to the latch deflection region. The first material has one first coefficient of thermal expansion;
The second material has one second coefficient of thermal expansion;
A first current flowing between the first drive electrode and the second drive electrode provides a thermal first stimulus, thereby causing the first current in the latch deflection region of the latch armature structure. Generate one deflection force,
A second current flowing between the first drive electrode and the second drive electrode provides a thermal second stimulus, thereby causing the first current in the latch deflection region of the latch armature structure. 2 Generate a deflection force,
The microfabricated relay according to claim 1.   The first current flows through one resistive heating element, the resistive heating element is incorporated into the latch deflection region of the latch armature structure, and the second current flows through the resistive heating element. A microfabricated relay according to claim 2.   4. The microfabricated relay of claim 3, wherein the resistive heating element is incorporated in one layer of the first material.   4. The microfabricated relay of claim 3, wherein the resistive heating element is formed between one layer of the first material and one layer of the second material.   The microfabricated relay of claim 1, wherein the first latch electrode insulator is formed on the first latch electrode and the second latch insulator is formed on the third latch electrode.   The microfabricated relay of claim 1, wherein the first latch electrode insulator is formed on the second latch electrode and the second latch insulator is formed on the fourth latch electrode. One layer of the first material has one first level piezoelectric response;
One layer of the second material has one second level piezoelectric response;
A first voltage applied between the first drive electrode and the second drive electrode provides a piezoelectric first stimulus, thereby causing the latch armature structure to include the first deflection voltage in the latch deflection region. Generating a first deflection force,
One second voltage applied between the first drive electrode and the second drive electrode provides one piezoelectric second stimulus, thereby causing the latch armature structure to have the latch deflection region in the latch deflection region. Generating a second deflection force,
The microfabricated relay according to claim 1.   9. The microfabricated relay of claim 8 having a level of piezoelectric response where one of the first material or the second material is essentially zero. The latch deflection region further comprises a layer of a third material;
The third material has one third level piezoelectric response, and the third level piezoelectric response is not equal to zero;
The first voltage applied between the first drive electrode and the second drive electrode is applied across the layer of the third material;
The piezoelectric response of the layer of the third material contributes to the first deflection force generated in the latch deflection region of the latch armature structure;
The second voltage applied between the first drive electrode and the second drive electrode is applied across the layer of the third material;
The piezoelectric response of the layer of the third material contributes to the second deflection force generated in the latch deflection region of the latch armature structure;
9. A microfabricated relay according to claim 8. A layer of the first material has a first initial level of internal stress;
One layer of the second material has one second initial level of internal stress;
The first and second initial levels of internal stress are compressible;
Applying one first mechanical deflection stimulus to the latch armature structure results in one buckling of the latch armature structure in the direction of the first mechanical deflection stimulus. Releasing a portion of the internal compressive level of initial stress thereby moving the second region of the latch deflection region to the lower latched position;
Applying one second mechanical deflection stimulus to the latch armature structure results in one buckling of the latch armature structure in the direction of the second mechanical deflection stimulus. Releasing a portion of the internal compressive level of internal stress thereby moving the second region of the latch deflection region to the upper latched position;
The microfabricated relay according to claim 1.   One external mechanical means applies the first mechanical deflection stimulus to the latch armature structure and one external mechanical means applies the second mechanical deflection stimulus to the latch armature structure; The microfabricated relay of claim 11.   A response of the latch deflection region to the first stimulus adds the first mechanical deflection stimulus to the latch armature structure, and a response of the latch deflection region to the second stimulus causes the second mechanical deflection stimulus. 12. The microfabricated relay of claim 11 in addition to the latch armature structure. The first stimulus is one of a thermal stimulus and a piezoelectric stimulus;
The second stimulus is one of a thermal stimulus and a piezoelectric stimulus;
14. A microfabricated relay according to claim 13. At least a portion of the first mechanical deflection stimulus is applied by one shape memory effect;
One layer of the first material has one first level shape memory effect for expansion;
One layer of the second material has one second level shape memory effect, and at least a portion of the second mechanical deflection stimulus is applied by one shape memory effect;
One layer of the first material has one first level shape memory effect for expansion;
One layer of the second material has one second level shape memory effect;
The microfabricated relay of claim 11. A microfabricated relay,
One substrate,
A cover located on the substrate;
One first base and one second base;
A plurality of load signal lines including one first load signal line, one second load signal line, and one third load signal line;
A plurality of control signal lines including one first drive signal line, one second drive signal line, one first latch signal line, and one second latch signal line;
A composite armature structure, wherein the composite armature structure comprises:
A latch armature structure, and a first anchor region attached to the first base;
One second anchor region attached to the second base;
One latch deflection region,
A first region attached to the first anchor region;
One second region attached to the second anchor region;
A third region capable of moving between one passive position and one lower latched position and one upper latched position,
The latch deflection area is
One first material that changes size by one first amount in response to one first stimulus and changes size by one third amount in response to one second stimulus;
A second material that changes size by one second amount in response to the first stimulus and changes size by one fourth amount in response to the second stimulus, wherein the first and second materials The amounts are not equal and in response to the first stimulus, a first deflection force is applied to the latch deflection region, the first deflection force moving the second region from the passive position to the lower latched position. The third and fourth quantities are unequal, and a second deflection force is applied to the latch deflection region in response to the second stimulus, the second deflection force being the second deflection force. A second material that serves to move a region from the passive position to the upper latched position;
A latch armature structure comprising: a third region comprising: a latch deflection region comprising:
A first latch electrode located on a portion of one lower surface of the first region of the latch deflection region;
A second latch electrode located on a portion of one lower surface of the second region of the latch deflection region;
A third latch electrode formed on the substrate under the first latch electrode;
A fourth latch electrode formed on the substrate below the second latch electrode;
A first latch electrode insulator that prevents electrical contact between the first latch electrode and the third latch electrode when the third region of the deflection region is in the latched position;
A second latch electrode insulator that prevents electrical contact between the second latch electrode and the fourth latch electrode when the third region of the deflection region is in the latched position;
One means for selectively applying the first stimulus to the latch deflection region;
A fifth latch electrode located on a portion of one upper side of the first region of the latch deflection region;
A sixth latch electrode located on a portion of one upper side of the second region of the latch deflection region;
A seventh latch electrode generally formed on a first portion of one lower surface of the cover above the fifth latch electrode;
An eighth latch electrode generally formed on a second portion of one of the lower sides of the cover above the sixth latch electrode;
A third latch electrode insulator that prevents electrical contact between the fifth latch electrode and the seventh latch electrode when the third region of the deflection region is in the upper latched position;
A fourth latch electrode insulator that prevents electrical contact between the sixth latch electrode and the eighth latch electrode when the third region of the deflection region is in the upper latched position;
One means for selectively applying the second stimulus to the latch deflection region;
A load armature structure, wherein the load armature structure comprises:
One anchor region attached to one third base;
A coupling region coupling the load armature structure to the latch armature structure;
One first region attached to the third anchor region, and one second region movable between one open position and one lower closed position and one upper closed position One contact deflection region, wherein the lower closed position is established when the third region of the latch deflection region is in the lower latched position, and the upper closed position is defined in the latch deflection region. A contact deflection area established when the third area is in the upper latched position;
One first contact electrode formed on a portion of one lower surface of the second region of the contact deflection region;
In general, a second contact electrode formed on the substrate under the first contact electrode, wherein the first contact electrode and the second contact electrode are such that the contact deflection region is in the lower closed position. A second contact electrode that is electrically contacted with a first contact force, the contact deflection region moving relative to the latch deflection region;
One third contact electrode formed on a portion of one upper side surface of the second region of the contact deflection region;
A fourth contact electrode generally formed on a third portion of the lower surface of the cover above the third contact electrode, wherein the third contact electrode and the fourth contact electrode are: A fourth contact electrode that is electrically contacted with one second contact force when the contact deflection region is in the upper closed position, the contact deflection region moving relative to the latch deflection region;
Microfabricated relay. The first contact electrode is formed on one lower surface of the third region of the latch deflection region, and the first contact electrode is located between the first latch electrode and the second latch electrode;
The third contact electrode is formed on an upper surface of one of the third regions of the latch deflection region, and the third contact electrode is located between the fifth latch electrode and the sixth latch electrode. Item 17. The microfabricated relay according to item 16. The latch deflection area is
One third material that changes size by one third amount in response to one third stimulus;
A fourth material that changes size by a fourth amount in response to the third stimulus, wherein the third and fourth amounts are not equal and are applied to the latch deflection region in response to the third stimulus; A fourth material that serves to move one second deflection force against the second region from the lower latched position to the passive position;
17. The microfabricated relay of claim 16, further comprising one means for applying the third stimulus to the third material and the fourth material in the latch deflection region. A method of operating one microfabricated relay configured according to claim 1 comprising:
Establishing a passive state in which the second region of the latch armature structure is in the passive position and the second region of the load armature structure is in the open position;
Establishing a first active state by applying a first stimulus to the latch armature structure;
The first stimulus has a magnitude and duration sufficient to apply one first deflection force to the deflection region of the latch armature structure;
The first deflection force is sufficient to move the first latch electrode to the vicinity of the second latch electrode to establish the lower latched position;
Establishing a first active state in which the first deflection force is transmitted through the coupling region to the contact deflection region structure to move the first contact electrode into electrical contact with the second contact electrode;
Establishing a lower latched state in which a first voltage is applied between the first latch electrode and the second latch electrode;
The first voltage induces a first electrostatic adhesion of the first latch electrode and the second latch electrode;
Establishing a lower latched state wherein the first electrostatic attachment has sufficient strength to maintain the lower latched position without continuing to apply the first stimulus;
Maintaining the first voltage to maintain the lower latched state for one first desired period;
Returning the microfabricated relay to the passive state by removing the first voltage;
Establishing a second active state by applying a second stimulus to the latch armature structure, comprising:
The second stimulus has a magnitude and duration sufficient to apply one second deflection force to the deflection region of the latch armature structure;
The second deflection force is sufficient to move the third latch electrode to the vicinity of the fourth latch electrode to establish the upper latched position;
Establishing a second active state in which the second deflection force is transmitted through the coupling region to the contact deflection region structure to move the third contact electrode into electrical contact with the fourth contact electrode;
Establishing an upper latched state in which a second voltage is applied between the third latch electrode and the fourth latch electrode, wherein the second voltage is applied to the third latch electrode and the third latch electrode; 4 induces a second electrostatic attachment with the latch electrode, the second electrostatic attachment having an intensity sufficient to maintain the upper latched position without continuing to apply the second stimulus. Establishing a latch state;
Removing the second stimulus;
Maintaining the second voltage to maintain the lower latched state for one second desired period;
Returning the microfabricated relay to the passive state by removing the second voltage. A method of operating one microfabricated relay configured according to claim 16, comprising:
Establishing a passive state in which the second region of the latch armature structure is in the passive position and the second region of the load armature structure is in the open position;
Establishing a first active state by applying a first stimulus to the latch armature structure;
The first stimulus has a magnitude and duration sufficient to apply a first deflection force to the deflection region of the latch armature structure;
The first deflection force moves the first latch electrode to the vicinity of the second latch electrode and moves the third latch electrode to the vicinity of the fourth latch electrode to establish the lower latched position. Enough,
Establishing a first active state in which the first deflection force is transmitted through the coupling region to the contact deflection region structure to move the first contact electrode into electrical contact with the second contact electrode;
Establishing a lower latched state, wherein a first voltage is applied between the first latch electrode and the second latch electrode, the first voltage being applied to the first latch electrode; Inducing a first electrostatic adhesion with the second latch electrode, a second voltage is applied between the third latch electrode and the fourth latch electrode, and the second voltage is applied to the third latch electrode. One second electroadhesion of the latch electrode and the fourth latch electrode is induced, and the first and second electroadhesions maintain the lower latched position without continuing to apply the first stimulus. Establishing a lower latched state with sufficient strength to:
Removing the first stimulus;
Maintaining the first voltage and the second voltage to maintain the lower latched state for one first desired period;
Returning the microfabricated relay to the passive state by removing the first and second voltages;
Establishing a second active state by applying a second stimulus to the latch armature structure, comprising:
The second stimulus has a magnitude and duration sufficient to apply one second deflection force to the deflection region of the latch armature structure;
The second deflection force is sufficient to move the fifth latch electrode to the vicinity of the seventh latch electrode and move the sixth latch electrode to the vicinity of the eighth latch electrode to establish the upper latched position. And
Establishing a second active state in which the second deflection force is transmitted through the coupling region to the contact deflection region structure to move the third contact electrode into electrical contact with the fourth contact electrode;
Establishing an upper latched state, wherein a third voltage is applied between the fifth latch electrode and the seventh latch electrode, the third voltage being applied to the fifth latch electrode; Inducing a third electroadhesion with the seventh latch electrode, the method comprising applying a fourth voltage between the sixth latch electrode and the eighth latch electrode; The voltage induces one fourth electroadhesion of the sixth latch electrode and the eighth latch electrode, and the third and fourth electroadhesions do not continue to apply the second stimulus and the upper latched Establishing an upper latched state having sufficient strength to maintain position;
The method removing the second stimulus;
Maintaining the third voltage and the fourth voltage to maintain the lower latched state for one second desired period;
Returning the microfabricated relay to the passive state by removing the third and fourth voltages.

Images