JP2005520043A - Method and apparatus for avoiding particle accumulation in electrodeposition - Google Patents

Abstract

System for removing or reducing the size of metal particles formed on workpiece surface effect devices used during electrodeposition and for limiting the rate at which metal particles form or grow thereon And presents a method. According to an exemplary method, the workpiece surface effect device (400) is sometimes placed in contact with a conditioning substrate coated with an inert material to reverse the bias applied to the electrodeposition system. According to another exemplary method, the workpiece surface effect device (400) is adjusted using a mechanical contact member, such as a brush (250), and the adjustment of the workpiece surface effect device (400) is, for example, a brush. By physical brushing of the workpiece surface effect device (400) according to (250). Further according to a typical method, the workpiece surface effect device (400) is rotated in different directions during electrodeposition.

Description

  The present invention relates to a method and apparatus for removing particles from a surface during electrochemical mechanical processing and avoiding particle accumulation at the surface.

  Conventional semiconductor devices typically include a semiconductor substrate, usually a silicon substrate, and a plurality of continuously formed dielectric intermediate layers such as silicon dioxide and conductive paths or interconnects made of a conductive material. . Interconnects are typically formed by filling conductive material into trenches etched into the dielectric interlayer. In an integrated circuit, a network of multistage interconnections extends laterally with respect to the substrate surface. Interconnects formed in different layers can be electrically connected using vias or contacts. Such a feature, i.e., filling via openings, trenches, pads or contacts with a conductive material, can be performed by depositing a conductive material on a substrate containing such a feature.

  Copper and copper alloys have recently attracted considerable attention as interconnect materials due to their excellent electromigration and low resistance characteristics. A preferred method of copper deposition is electrodeposition. During manufacturing, copper is deposited on a substrate that is pre-coated with a barrier layer and then a seed layer. The barrier layer covers not only the vias and trenches but also the surface of the dielectric layer to ensure good adhesion and function as a barrier material to prevent copper diffusion through the dielectric insulating layer to the semiconductor device. Typically, the seed layer forms a base of conductive material for copper film growth during subsequent copper deposition. Typical barrier materials generally include tungsten, tantalum, titanium, alloys thereof, and nitrides thereof. The deposition process can be performed using a variety of processes. After depositing copper in the form on the surface of the semiconductor wafer, an etching, electropolishing (also called electrolytic etching), electrochemical mechanical etching (ECME) or chemical mechanical polishing (CMP) process may be used. These processes remove the conductive material from the surface field regions, thereby leaving the conductive material only in vias, trenches and other features.

  In conventional electrodeposition techniques, copper is coated on the wafer surface in a conformal manner. As shown in FIGS. 1-3, for example, when a dual damascene structure on a wafer surface is coated with copper using conventional plating, a fairly conformal film results.

  1 to 3 show three possible stages in a conventional process. The first stage shown in FIG. 1 shows a dual damascene structure 10 having a wide trench 11, a small via 12 covered with a barrier layer 13, and a copper seed layer 14. When the copper film is electroplated in the second stage shown in FIG. 2, the copper 15 immediately fills the small vias 12 but covers the large trenches and surface in a conformal manner. Continuing the deposition process, the large trench is also filled with copper in the third stage shown in FIG. 3, but with a large step 'S' and a thick copper layer 't'. Thick copper on the surface causes problems during the material removal process, such as the CMP step, which is expensive and time consuming. A technique that can produce a thin surface copper overburden and small 'S' step or no step is very attractive and is illustrated in FIG.

  The importance of overcoming the various drawbacks of conventional electrodeposition techniques has been demonstrated by technological development directed to the deposition of flat copper layers. For example, US Pat. No. 6,176,992 (commonly owned by the assignee of the present invention) entitled “Methods and Apparatus for Electrochemical Mechanical Deposition”, in one aspect, provides conductive material to cavities on a substrate surface. An electrochemical machine that achieves deposition while minimizing deposition on the field region by polishing the field region with a pad when conductive material is deposited, thus resulting in a flat copper deposition Describes deposition techniques (ECMD). In another aspect, this application describes an electrochemical mechanical etching (ECME) or electrolytic etching or electropolishing technique that removes conductive material from the surface of a workpiece.

  US patent application 09 / 740,701 entitled “Plating Method and Apparatus Using External Action to Create Differences between Additives Deposited on Workpiece Top Surface and Cavity Surface” (also the same assignment as the present invention) Exists for a period of time between the upper surface of the workpiece and the cavity surface by causing an external action, for example, causing a relative movement between the workpiece and the mask. Another method and apparatus for plating a conductive material on a substrate by making a difference in the adducts to be described is described. While this difference is maintained, power is applied between the electrode (in this case, the anode) and the substrate to perform more relative plating on the cavity surface than on the top surface.

  These ECMD methods can deposit metal in a flat manner in and on cavities on the workpiece. Some methods can even give deposits with excess metal in and on the cavities. In the process as described above, a pad, mask or sweeper (hereinafter collectively referred to as a workpiece surface effect device (WSID)) can be used in at least part of the electrodeposition process, at which time the workpiece There will be physical contact between the surface and the WSID. Physical contact, polishing, or external action affects metal growth by effectively reducing the growth rate at the top surface relative to morphology. During the process steps involving close proximity, typically in contact with the metal surface, small metal particles will adhere to the WSID material. These particles may be present either because they have just been physically removed from the substrate surface or originate from the plating solution due to poor filtration of the plating solution. In all cases, once the conductive metal particles are deposited at a location on the WSID, they will begin to increase in size as they become the cathode relative to the electrode. Furthermore, since they are conductive, they receive a coating and increase in size.

  ECME methods also use WSID, and while using these methods, the WSID is also in close proximity and typically in contact with the metal surface of the workpiece. The potential applied between the workpiece surface and the electrode during ECME is reversed to make the workpiece surface an anode. Therefore, material is removed from the workpiece surface. If no WSID is used in this metal removal step, i.e. there is no mechanical action on the workpiece surface, this process is simply called electrochemical etching or electrochemical polishing. Note that in general, both ECMD and ECME processes are referred to below as electrochemical mechanical processing (ECMPR). This is because both include an electrochemical process and a mechanical action.

  In addition to conductive particles, there are also non-conductive particles that can accumulate on the WSID material. Non-conductive particles may originate from other parts of the system, for example from the plating solution due to poor filtration or from the WSID material itself due to wear and tear during the process.

  It is undesirable for such particles to be present on or close to the surface of the WSID. Because if they are free and there is a path to the interface between the WSID and the workpiece surface, they can cause scratches, inclusions, or other defects on the workpiece surface, or In particular, when the WSID has a non-flat surface profile, it actually scratches the surface of the WSID.

  Therefore, process steps that limit the removal of such particles, or their growth, increase process yield and in planarization metal deposition techniques where the particles are in close proximity to or in contact with the workpiece surface, particularly where the particles are in the workpiece. It is very important to increase the lifetime of the WSID used when provided on the WSID that contacts the surface.

  An object of the present invention is to remove or reduce the particle size of particles formed on pads, masks, sweepers or WSIDs used during electrochemical mechanical processing (ECMPR).

  Another object of the present invention is to limit the rate at which conductive particles form or grow on the WSID used during ECMPR.

  Yet another object of the present invention is to reduce defects on the workpiece.

  Among other things, some of the above objectives of the present invention are achieved by occasionally adjusting the WSID used during ECMPR in one embodiment, either alone or in combination.

  In one embodiment, this includes placing the WSID facing the conditioning substrate and applying a bias that causes the removal of conductive particles on the WSID or a reduction in size.

  In another embodiment, the WSID is adjusted using a mechanical contact member, such as a brush, and the adjustment is made by physical brushing of the WSID with, for example, a brush.

  In another embodiment, the adjustment is made by rotating the WSID used during electrodeposition in different directions or by rotating successive substrates or workpieces in different directions.

  These and other embodiments can also be combined, as will be described in more detail below.

  The above and other objects, features and advantages of the present invention may be better understood when the following detailed description of the preferred embodiment is read in conjunction with the accompanying drawings.

  One method of removing conductive, typically metallic, or other particle growth on a workpiece surface effect device (WSID) surface is to perform electrochemical mechanical processing simultaneously with electrochemical mechanical processing. The use of a 'particle removal step' during electrochemical mechanical processing when stopped intermittently. This step involves using an adjustment system with an adjustment member that can assist in removing particles. As described below, the adjustment member can be an adjustment substrate with a plurality of mechanically actuated brushes, a conductive adjustment substrate with mechanically and electrically actuated conductive brushes, or an electrically actuated adjustment. It can take the form of a conductor layer. Of course, there may be changes in these embodiments. As shown below, when electrically operated, as further shown below, the conductor used for coating is an inert material that cannot be anodized or etched under bias in the plating solution. Preferably there is.

  Reference will now be made to the drawings wherein like reference numerals refer to like parts throughout. FIG. 5 schematically illustrates an exemplary electrochemical mechanical processing (ECMPR) system 100 that can be used for ECMD and ECME processes. The system 100 in our example includes an electrode 102, a workpiece 104 and a WSID portion 106. When used for ECMD, the system includes a plating solution that contains the ionic species of the metal to be deposited and contacts the electrode 102 and the workpiece 104. A typical copper plating solution may be a copper sulfate solution commonly used in industry. Workpiece 104 may be a representative substrate, preferably a silicon wafer portion, plated with a conductive metal, preferably copper. The substrate 104 has a front surface 108 plated with copper and a bottom surface 110 held by a carrier head (not shown). The front surface 108 will have the configuration shown in FIG.

  FIG. 6 illustrates an exemplary WSID portion 106 having a top surface 112 and a bottom surface 114 in more detail. The WSID 106 also has an exemplary channel 116 that is bounded by a sidewall 118 having a first wall 118a and a second wall 118b that extends between the top surface 112 and the bottom surface 114. The channel also extends laterally between the closed end 120 and the open end 122. Although the channel in this example is V-shaped, it can be appreciated that any shape of channel that allows fluid flow between the wafer and the electrode can be used.

  During the ECMD process, the front surface 108 of the substrate 104 is in close proximity or contact with the top surface 112 of the WSID 106 for flat metal deposition. When the plating solution indicated by the arrow 124 is sent to the channel 116, the substrate 104 rotates about the rotation axis 126 while the front surface 108 is in contact with or close to the upper surface 112 of the WSID 106. For cleaning purposes, the rotational axis 126 is at the point where the closed end 120 of the channel 116 is located, so that rotation of the substrate 104 ensures that the entire front surface 108 of the substrate 104 is in uniform contact with the channel 116. Guarantee. As the solution is sent to fill the channel 116, the front surface 108 of the substrate 104 is wetted. In the presence of a solution 124 that fills the channel 116 with a potential applied between the substrate and the electrode 102, a conductor or metal, such as copper, is plated onto the front surface 108 of the substrate 104, and the front surface 108 of the substrate 104 is also the WSID 106. The upper surface 112 is cleaned. This cleaning of the top surface 112 of the WSID 106 helps to obtain a flat deposit of metal. Solution 124 is delivered continuously under pressure and then flows through channel 116 in the direction of arrow 128 toward open end 122 of channel 116 and exits WSID 106.

  It should be noted that the above description describes the rotation and movement of the substrate 104 as if the WSID 106 is stationary. As described above, it will be appreciated that the system allows either the substrate or the WSID to move or both to move, thereby producing the same relative effect. However, for the sake of simplicity, the present invention has been described with respect to substrate motion and will continue to do so. Furthermore, the channel shapes may be different. When the system 100 is used for ECME, the same plating solution used for ECMD can be used, but can be replaced with an electrolytic etching solution or an electropolishing solution or etching solution. In the case of ECME, the WSID typically contacts the workpiece as described above, but the applied potential between the substrate and the electrode 102 is the reverse of that used for plating, as will be described later. It will have the same polarity as used when adjusting WSID using an adjustment substrate that uses the applied potential.

  FIG. 7A illustrates how the planarization plating process through the channel 116 proceeds as the substrate 104 rotates about the rotation axis 126 on the WSID 106 described above. It should be understood that in the case of cathode ECMD, the ionic species in solution 124 are positively charged. Thus, the substrate surface 108 on which deposition is taking place becomes the cathode (more negative) relative to the electrode 102 (becomes the anode). It should be noted that the electrode may be an inert electrode (eg, Pt, graphite, Pt coated Ti, etc.) or may consist of the same metal (consumable electrode) that is deposited on the substrate surface 108. It is. When a cathode voltage is applied to the substrate surface 108, metal is deposited from the plating solution 124 onto the substrate surface 108. However, as described above, particles 130 will form on the sidewalls 118 of the channels 116 as the process proceeds. In the process of the present invention, the ECMD process may be repeated to coat metal on a number of substrate surfaces until the growth of metal particles on the WSID is a problem. The rate at which particle growth occurs depends on many factors, particularly how the plating is performed, and in particular the applied voltage used during plating. However, in general, after processing 10-100 wafers or typically 20-50 wafers, undesirable particles begin to become a problem. Similarly, in the ECME process, particles also become a problem when attached to the WSID. As previously mentioned, the presence of such particles on or in close proximity to the surface of the WSID is undesirable. Because if they become free and there is a path to the interface between the WSID and the workpiece surface, they can cause scratches, inclusions, or other defects on the workpiece surface, or in particular If the WSID has a non-flat surface profile, it actually scratches the surface of the WSID. For example, when such particles grow above 0.5 micron size, it is desirable to use the teachings of the present invention to remove them or at least reduce their size.

  That ECMD, ECME and other processes can be carried out in succession, the adjustment step can be performed after several such processes, and then such processes can be performed several times Should be understood. For example, an ECMD process, followed by an ECME process, followed by an ECMD process is typical. It is then desirable to make WSID adjustments according to the present invention and then resume with several processes, such as another set of ECMD, ECME and ECMD processes. Alternatively, adjustments may be made after the ECMD process and before the EMME process.

  As mentioned above, the channels in the WSID may have different shapes and sizes. FIG. 7B illustrates a WSID 500 having a channel 502 formed as a slit, preferably a substantially parallel slit, and a top surface 503 or cleaning surface. Channel 502 will have a sidewall 504. The channel allows an electrolyte or other solution to flow between the electrode (not shown) and the front surface of the wafer 506 (shown in dotted lines) that can rotate and move laterally. In this example, the top surface 503 of the WSID performs a cleaning action. As the ECMD or ECME process proceeds, particles 508 will deposit on the sidewalls 504. However, as can be seen in the plan view of FIG. 7C and the cross-sectional view of FIG. 7D, the WSID 500A may have a smaller protruding surface 510 compared to the top surface 503A of the WSID 500A. In this embodiment, the cleaning function is performed by the protruding surface 510. As in the previous case, particles 508 will deposit on the sidewalls 512 of the protruding surface 510 as the ECMR proceeds. As described more fully below, such undesirable particles are removed using the teachings of the present invention.

  In the above examples, the channels and the sidewalls of the protruding surface are described as the primary particle growth or location. However, such undesired particles may be at other locations on the WSID, such as the top surface of the WSID. FIG. 7E shows the WSID portion 600. The top surface 602 of the WSID 600 may have various surface features 604 that can enhance mechanical cleaning of the wafer surface (not shown). Form 604 may include abrasive particles. As shown in FIG. 7E, at various locations on the surface morphology, the particles may adhere and in some cases grow, and the particles should be removed using the teachings of the present invention. As shown in FIG. 7F, during the process, a portion 608 of the top surface 602 of the WSID is freed from fatigue and breakage, forming particles 606 and damaging the wafer surface.

  Therefore, the cleaning process according to the teachings of the present invention not only cleans such fatigued portions 608 after they break and leave the surface, but once they become weakly attached to the top surface, they break. And remove them safely before leaving.

To that effect, in one embodiment, the adjustment substrate 132 is covered with the adjustment conductor layer 134 as shown in FIG. This embodiment of the conditioning substrate 132 performs an electrochemical cleaning of the WSID 106 to remove conductive particles. As described below, an alternative embodiment of the conditioning substrate may have a mechanical contact member and mechanically sweep the WSID 106 (see FIG. 11A) to remove both conductive and non-conductive particles. As described below, the mechanical contact members can mechanically remove particles from where they are accumulated. Surface 136 of the adjustment conductor layer 134 in FIG. 8, as compared to the electrode 102, the anode i.e. more is positive, for example 0.1~100mA / cm ² and typically the anode in the range of 1~20mA / cm ² A current density is applied. The anode electrode will be energized for a period of time sufficient to reduce or remove such particles. This period will typically be in the range of 2-10 seconds. The conditioning conductor is a material that is free (or at least substantially free) of anodization or etching or other property change under anodizing conditions in the plating solution. Nor should any particles be liberated. Therefore, it is preferably made of a hard coating. Inert nitrides of titanium (Ti), tungsten (W) and tantalum (Ta), or platinum (Pt) or Pt containing alloys, or iridium (Ir) or Ir containing alloys usually include Cu, Ni, Co, etc. It is a good example of such a conditioning conductor for a metal deposition process that deposits any metal or metal alloy. It should be noted that this conditioning conductor need not have a very low resistance like copper. A sheet resistance of 0.1 to 10 ohms per square is sufficient, although lower resistances can be used. In this regard, the adjustment substrate 132 may be a semiconductor wafer covered with the adjustment conductor layer 134. When an anode voltage is applied to the adjustment conductor layer 134 on the adjustment substrate 132, the metal particles on or near the WSID 106 also become the anode with respect to the electrode 102. Preferably, during this process, the surface of the conditioning conductor layer is in physical contact with the surface of the WSID. As described above, the adjustment conductor layer 134 on the adjustment substrate 132 is not substantially affected by the anode voltage, however, the metal particles 130 are anodized and etched into the plating solution 124. This etching process either completely dissolves the particles 130 in the solution 124 or makes them smaller in size, so that they are typically released from the location where they are located, for example from the sidewalls 118 to which they adhere, resulting in flow. They can be washed away by the plating solution 124.

  In another embodiment, the adjustment member may be used to mechanically remove particles of both conductive and non-conductive nature. As shown in FIG. 11A, the adjustment member 200 is a flat plate having a front surface 202 and a back surface 204, preferably a disc shape. The front surface 202 has a mechanical contact member 206 to mechanically clean the WSID 106. The mechanical contact member 206 may be a brush, a wiper, or the like. In this embodiment, two rows of brushes 206 are deposited on the front surface 202 so that they intersect each other at the center of the front surface 202 in a nearly vertical arrangement. As shown in FIG. 11B, in another embodiment, the adjustment member 200A has a front surface 202A and a back surface 204A. In this embodiment, the front surface includes a plurality of mechanical contact members 206A distributed over the entire front surface 202A of the adjustment member 200A. Other brush variations can also be used effectively.

  Brush 206 and adjustment member 200 are made of a conductive material or insulator, as described herein, depending on whether adjustments are required that require them to conduct. Also good. When the WSID needs to be cleaned, the adjustment member is placed on the wafer carrier, workpiece holder, or carrier head, and the adjustment member is lowered onto the WSID while rotating or otherwise moving. As shown in FIG. 12, during operation, the mechanical action between the brush 206 and the particles 130 removes the particles, whether conductive or non-conductive, from where they are located, such as the sidewall 118. The plating solution is preferably kept flowing during the process to wash away any particles that will be removed. The adjusting member 200 can be used for mechanically cleaning the WSID, but it can also be used for electrochemical cleaning as in the first embodiment. In this case, the adjustment member and brush 206 must be made of a conductive material or coated with a conductor that is not anodized in the plating solution. An electrical contact 208 is slidably connected or otherwise connected to the edge of the back surface 204 so that an anode potential can be applied to the adjustment member. Contact connections may be formed just at the edge or on the front surface. During the process, the application of electric potential can selectively dissolve the conductive particles in contact with the conductive brush, while the mechanical action of the brush mechanically combines both conductive and non-conductive particles. To remove.

  In the above example, when the workpiece is subsequently processed using the plating solution 124, the surface of the WSID is substantially free of particles so that the particles do not threaten the integrity of the film. For example, when copper is deposited without using a conditioning process, after running 20-50 wafers or more with WSID contact, the particles may grow to a size of 10 microns or more, and the location of these particles is in the channel. Concentrate along the edge. The particle size and growth rate will vary depending on the charge used per substrate and the duration of the process per wafer. Generally, the conditioning process will be performed after processing several numbers of wafers, for example 10-50 wafers, but the number of wafers processed before using the conditioning system depends on the desired throughput. It will be appreciated that a balance between acceptable and undesirable particle concentrations is required.

  In another embodiment of the present invention, removal of particle accumulation and growth, or at least reduction of formation and / or growth of such particles along the channel of the WSID 106 may be applied to the direction of rotation of the substrate or wafer during the process. This is achieved by controlling each operation. In this embodiment, as shown in FIG. 9, the first substrate 136 or wafer is first rotated in a first direction 138 during processing of the first substrate 136. As shown in FIG. 10, during processing of the second substrate 140 or wafer, the substrate 140 is rotated in a second direction that is exactly opposite to the first direction 138. In this way, particles 130 (conductive or non-conductive) begin to accumulate along the first sidewall 118a of the channel 116, but are released and pushed into the channel during the processing cycle of the second substrate 140. They do not give them the opportunity to grow and do not adversely affect the quality of the coating on the substrate. This method is particularly applicable to ECMD, but can also be used with ECME.

  The embodiments shown above can be used in combination to further reduce the presence of unwanted particles.

  As mentioned above, the WSID may have different channel arrangements and shapes. As shown in FIGS. 13, 14 and 15, in another embodiment, an adjustment device 249 that includes a brush member 250 may be incorporated into an electrochemical mechanical processing (ECMPR) system 300 having a WSID 400.

  16-18 illustrate an exemplary WSID 400 that can be cleaned or adjusted in accordance with the present invention. However, any shape WSID can be used as suitable, such as that shown in FIG. 7B or 7C. The WSID includes a channel system 402 that includes a recessed channel region 404 and a protruding cleaning or polishing region 406. Channel system 402 is preferably comprised of one or more channels, such as first channel 408 and second channel 410, and one or more polishing regions 406. Each channel 408, 410 has a closed end 412 and an open end 414. Closed end 412 forms the center of WSID 400. The open end 414 may also be formed in other ways without adversely affecting the unique properties of the present invention. Preferably, the protruding polishing region 406 has a top surface 416 and a sidewall 418. Sidewall 418 raises the upper surface from surface 402 of recessed region 404. The upper surface of the protruding polishing region is preferably formed to be on the same plane. The top surface 416 is abrasive and sweeps the wafer surface during the process (either ECMD or ECME). The top surface may have a texture as shown in FIG. 7E. A plurality of holes 422 reach between the bottom surface of the WSID 400 and the retracted region. The hole 422 in the channel region is formed in such a shape that the inner wall and outer wall of the hole 422 coincide with an arc with a predetermined radius from the center of the WSID, and gradually decreases in size as it approaches the center of the WSID. In this manner, the WSID is placed on opposite sides from the center (holes are arranged in a row at intervals as shown) to ensure that the entire wafer receives a uniform application of electrolyte.

  Referring back to FIG. 14, the system 300 includes a lower chamber 302, an upper chamber 304, and a carrier head 305 that holds a wafer. The lower chamber 302 comprises a chamber containing an electrochemical mechanical processing (ECMPR) unit 306. The ECMPR unit 306 includes an electrode 308 and a WSID 400. As described above, during the process, the electrolyte solution 312 contacts the electrode 308 and flows over and through the WSID 400. A description of one embodiment of such a system is provided in pending US Application No. 09 / 466,014, entitled “Vertically Configured Chamber for Use in Multiple Processes” (commonly owned by the assignee of the present invention). ). The conditioning device may also be incorporated into the ECMPR unit 306. Upper chamber 304 is separated from lower chamber 302 by a movable guard or flap 314. In this embodiment, the wafer is mounted in the upper chamber 304 and lowered to the lower chamber 302 for ECMPR. Once ECMPR is complete, the carrier head holding the wafer is raised to the upper chamber 304 and the flap 314 is closed. While the wafer is rinsed in the upper chamber and dried, the WSID is adjusted in the lower chamber 302 using the brush member 250.

  Referring also to FIG. 14, the brush member 250 can be moved between the WSID first end 326 and the WSID second end 328 in the direction of arrows A and B by a brush assembly 324 that causes the brush member 250 to move to the WSID 400. You can move it up. The brush assembly is also part of the adjustment device. The lateral movement of the brush member on the WSID surface mechanically cleans the surface to eliminate conductive and non-conductive particles. The first position is the home position of the brush member 250, which is held here when the adjustment process is finished. The brush member 250 can be used to mechanically clean the WSID, but can also be used for electrochemical cleaning as in one embodiment above. In this case, the brush member 250 must be made of a conductive material or coated with a conductor that is not anodized in the plating solution. An electrical contact (not shown) may be connected to the brush member 250 so that an anode potential can be applied. Throughout the process, the application of an electric potential can selectively electrochemically dissolve the conductive particles in contact with the conductive brush, while the mechanical action of the brush allows both conductive and non-conductive particles. Is removed mechanically.

  As shown in FIG. 15, the brush member 250 is mechanically connected to the belt 331 of the brush assembly 324 by a connector 330. A drive motor 332 simultaneously moves the belt 331 along the side of the processing unit 306. The motor 332 moves the belt 331, the connector 330, and the brush member 250 coupled thereto in the directions of arrows A and B. Belt 324 is connected to motor 332 through shaft 334 and wheel 336. As described above, the lower chamber 302 is separated from the upper chamber 304 by the movable flap 314. The top surface of the flap 314 has a fluid nozzle 316 that performs cleaning and rinsing. In this embodiment, cleaning and rinsing are performed in the upper chamber 304. Meanwhile, cleaning and rinsing solutions are sent through the nozzle 316 to the wafer surface. The used solution exits the system through the waste opening 320. During the process, the substrate carrier or carrier head 305 is rotating. Once the ECMPR process is complete, the wafer is rinsed and dried in the upper chamber 304 while the WSID is adjusted in the lower chamber 302. During WSID adjustment, the brush assembly is moved to the operating position and moved across the WSID to clean the WSID surface. As shown in FIG. 15, when the process is complete, the brush assembly is returned to the home position. Although a particular design is disclosed in FIG. 15, it should be understood that many different structures can be used to move the brush member over the WSID to implement the adjustment method invention disclosed herein.

  19 and 20 illustrate a side view of yet another adjustment device 700 that includes a carrier head 702 with a brush 704, and a bottom view of the adjustment device 700. As shown, the brush 704 is disposed around the carrier head 702. The brush 704 is provided for adjusting the WSID 706 by mechanical operation in the same manner as described above. However, in this embodiment, ECMPR (whether ECMD or ECME) and WSID 706 adjustment of workpiece 708 can be made simultaneously during the same process. In this particular situation, to adjust the entire WSID 706, the lateral movement of the WSID 706 is preferably equal to or greater than the radius of the carrier head 702 so that the WSID portion covered by the carrier head can be effectively cleaned. Should be.

Although the present invention has been described with reference to particular embodiments, the scope of modifications, various variations and substitutions are contemplated in the foregoing disclosure. In some cases, it will be appreciated that certain features of the invention may be used without departing from the spirit and scope of the invention without the use of corresponding other features. Let ’s go.

The figure which shows the process step of the metal plating on the semiconductor substrate which uses an electrodeposition technique. The figure which shows the process step of the metal plating on the semiconductor substrate which uses an electrodeposition technique. The figure which shows the process step of the metal plating on the semiconductor substrate which uses an electrodeposition technique. The figure which shows the process step of the metal plating on the semiconductor substrate which uses an electrodeposition technique. 1 shows various components of a representative electrochemical mechanical processing system. FIG. The figure which shows typical WSID. FIG. 3 shows particle accumulation on a representative WSID that can act in accordance with the present invention. FIG. 5 shows particle accumulation on another representative WSID. The figure which shows accumulation | storage of the particle | grain on another typical WSID. FIG. 7C is a cross-sectional view of the WSID shown in FIG. 7C. FIG. 4 shows particle accumulation on the surface of a representative WSID. FIG. 5 shows particle accumulation on a fatigued surface of a representative WSID. The figure which shows the usage method of the typical adjustment board | substrate by the Example of this invention. The figure which shows another typical Example of this invention. The figure which shows another typical Example of this invention. The figure which shows the typical adjustment member by another Example of this invention. The figure which shows another typical Example of the adjustment member shown to FIG. 11A. The figure which shows the usage method of the adjustment member of FIG. 11A. FIG. 3 illustrates the incorporation of a mechanical contact member into a plating system having an exemplary mechanical contact member and WSID. FIG. 3 illustrates the incorporation of a mechanical contact member into a plating system having an exemplary mechanical contact member and WSID. FIG. 3 illustrates the incorporation of a mechanical contact member into a plating system having an exemplary mechanical contact member and WSID. FIG. 4 shows an exemplary WSID that can be cleaned or adjusted according to the present invention. FIG. 4 shows an exemplary WSID that can be cleaned or adjusted according to the present invention. FIG. 4 shows an exemplary WSID that can be cleaned or adjusted according to the present invention. The figure which shows the adjustment board | substrate apparatus which can also perform electrochemical mechanical processing on the other hand, adjusting WSID. The figure which shows the adjustment board | substrate apparatus which can also perform electrochemical mechanical processing on the other hand, adjusting WSID.

Claims (92)

A processing method comprising adjusting a workpiece surface effect device, wherein the workpiece surface effect device is used in at least a portion of at least one electrochemical mechanical process that acts on the workpiece using a solution, the method comprising: ,
Acting on a workpiece using a solution in electrochemical mechanical processing, wherein the workpiece surface-acting device is placed in close proximity to the workpiece for a period of time during electrochemical mechanical processing, and also in an electrochemical mechanical process Producing a buildup of particles on the workpiece surface effect device;
Adjusting the workpiece surface effect device prior to performing another electrochemical mechanical process, resulting in one of reducing the number of accumulated particles and reducing the size of the accumulated particles by conditioning. A processing method comprising:   The method according to claim 1, further comprising performing another electrochemical mechanical treatment.   The method of claim 2, wherein the electrochemical mechanical process is a first electrochemical mechanical deposition process and the other electrochemical mechanical process is a second electrochemical mechanical deposition process.   The method of claim 3, wherein the first electrochemical mechanical deposition process operates on a workpiece and the second electrochemical mechanical deposition process operates on another workpiece that is different from the workpiece.   The method of claim 3, wherein the first electrochemical mechanical deposition process acts on the workpiece and the second electrochemical mechanical deposition process acts on the workpiece.   The method of claim 2, wherein the electrochemical mechanical process is an electrochemical mechanical deposition process and the other electrochemical mechanical process is an electrochemical mechanical etching process.   The method of claim 6, wherein an electrochemical mechanical deposition process acts on the workpiece and an electrochemical mechanical etching process acts on the workpiece.   The electrochemical mechanical process is an electrochemical mechanical deposition process, and the particles that are reduced in the conditioning process are formed and accumulated during the electrochemical mechanical deposition process and consist of a substantially conductive material deposited by the electrochemical mechanical deposition process. The method of claim 1, wherein the method is conductive particles.   Electrochemical mechanical processing is an electrochemical mechanical etching process, and particles that decrease in the conditioning process are formed and accumulated during the electrochemical mechanical etching process, and are substantially from the conductive material removed by the electrochemical mechanical etching process. The method according to claim 1, wherein the conductive particles are.   The method of claim 1, wherein the particles that decrease in the conditioning step are non-conductive particles.   The method according to claim 1, wherein the adjusting step includes applying a potential difference between the electrode and the adjusting member.   Electrochemical mechanical processing is an electrochemical mechanical deposition process that uses another potential difference opposite to the potential difference, and particles that decrease in the conditioning process are accumulated during the electrochemical mechanical deposition process and deposited by the electrochemical mechanical deposition process. The method according to claim 11, wherein the conductive particles are substantially composed of a conductive material.   The electrochemical mechanical process is an electrochemical mechanical etching process that uses another potential difference having the same polarity as the potential difference, and particles that decrease in the adjustment process are accumulated in the electrochemical mechanical etching process, and the electrochemical mechanical etching process. The method of claim 11, wherein the conductive particles are substantially composed of a conductive material removed by.   The method of claim 11, wherein the adjusting step further comprises establishing a frictional mechanical contact between the workpiece surface effect device and the adjusting member.   15. The method of claim 14, wherein the adjusting step rotates the adjusting member relative to the workpiece surface effect device.   15. The method of claim 14, wherein the adjusting step moves the adjusting member laterally relative to the workpiece surface effect device.   The method of claim 1, wherein the adjusting step further comprises establishing a frictional mechanical contact between the workpiece surface effect device and the adjusting member.   The method of claim 17, wherein the adjusting step rotates the adjusting member relative to the workpiece surface effect device.   The method of claim 17, wherein the adjusting step moves the adjusting member laterally relative to the workpiece surface effect device.   The method of claim 2, wherein the electrochemical mechanical treatment is a plurality of electrochemical mechanical treatments, and the other electrochemical mechanical treatment is another multiple electrochemical mechanical treatment.   21. The method of claim 20, wherein the plurality of electrochemical mechanical processes includes an electrochemical mechanical deposition process and an electrochemical mechanical etching process.   The method of claim 21, wherein the other plurality of electrochemical mechanical processes includes another electrochemical mechanical deposition process and another electrochemical mechanical etching process.   21. The method of claim 20, wherein the plurality of electrochemical mechanical processes includes a first electrochemical mechanical deposition process and an electrochemical mechanical etching process and a second electrochemical mechanical deposition process.   24. The method of claim 23, wherein the other plurality of electrochemical mechanical processes includes another first electrochemical mechanical deposition process and another electrochemical mechanical etching process and another second electrochemical mechanical deposition process.   The method of claim 1, wherein during the step of using the solution to act on the workpiece in electrochemical mechanical processing, the workpiece surface effect device contacts the workpiece for the period of time.   The method of claim 1, wherein during the step of using the solution to act on the workpiece in electrochemical mechanical processing, the workpiece surface effect device does not contact the workpiece for the period of time.   The method of claim 1, wherein the solution flows through channels formed in the workpiece surface effect device during the action step to reduce particles formed in the channels during the conditioning step.   The solution of claim 1, wherein the solution flows through a channel formed in the workpiece surface effect device during the action step to reduce conductive particles associated with electrochemical mechanical processing formed in the channel during the conditioning step. Method.   The solution of claim 1, wherein the solution flows through a channel formed in the workpiece surface effect device during the action step to reduce conductive particles associated with electrochemical mechanical deposition formed in the channel during the conditioning step. Method. Removing the workpiece from where it was placed in proximity to the workpiece surface effect device upon completion of the action step;
The method of claim 1, further comprising the step of bringing the adjustment member proximate to the workpiece surface effect device such that the adjustment step is subsequently performed.   31. The method of claim 30, wherein both the removal step and the proximity step use a holder, the holder holds the workpiece during the action step, and the holder holds the adjustment member during the adjustment step.   32. The method of claim 31, wherein the adjusting step includes applying a potential difference between the electrode and the adjusting member.   Electrochemical mechanical processing is an electrochemical mechanical deposition process that uses another potential difference opposite to the potential difference, and particles that are reduced in the conditioning process are deposited during the electrochemical mechanical deposition process and deposited by the electrochemical mechanical deposition process. 33. The method of claim 32, wherein the particles are conductive particles made of substantially conductive material.   The electrochemical mechanical process is an electrochemical mechanical etching process that uses another potential difference having the same polarity as the potential difference, and particles that decrease in the adjustment process are accumulated during the electrochemical mechanical etching process. 33. The method of claim 32, wherein the conductive particles are substantially conductive material removed by.   The method of claim 32, wherein the adjusting step further comprises establishing a frictional mechanical contact between the workpiece surface effect device and the adjusting member.   36. The method of claim 35, wherein establishing the frictional mechanical contact comprises establishing the contact using a brush that is part of an adjustment member.   36. The method of claim 35, wherein the adjusting step rotates the adjusting member relative to the workpiece surface effect device.   36. The method of claim 35, wherein the adjusting step moves the adjusting member laterally relative to the workpiece surface effect device.   32. The method of claim 31, wherein the adjusting step further comprises establishing a frictional mechanical contact between the workpiece surface effect device and the adjusting member.   40. The method of claim 39, wherein the adjusting step rotates the adjusting member relative to the workpiece surface effect device.   40. The method of claim 39, wherein the adjusting step moves the adjusting member laterally relative to the workpiece surface effect device. A processing apparatus comprising removal of particles on a workpiece surface effect device used during electrochemical mechanical processing of a workpiece that occurs in the presence of a solution, comprising:
Suitable for performing electrochemical mechanical processing on workpieces,
Electrodes,
A holder adapted to hold the workpiece,
An electrochemical mechanical processing system including a terminal adapted to contact the electrode with the workpiece;
The electrochemical mechanical processing system is adapted to use the solution to act on the workpiece, place the workpiece surface effect device in close proximity to the workpiece for a period of time during the electrochemical mechanical processing, and Processing the workpiece surface effect device to cause accumulation of particles on the workpiece surface effect device;
A processing apparatus including a conditioning system adapted to condition a workpiece surface effect device, thereby providing one of reducing the number of accumulated particles and reducing the size of accumulated particles.   43. The apparatus of claim 42, wherein the adjustment system is attached to the holder and is adapted to allow both adjustment of the workpiece surface effect device on the workpiece and electrochemical mechanical processing to occur simultaneously.   43. The apparatus of claim 42, wherein the adjustment system includes an adjustment substrate having a plurality of brushes thereon, the plurality of brushes adapted to mechanically contact the workpiece surface effect device.   45. The apparatus of claim 44, wherein the conditioning substrate is attached to the holder when the workpiece is removed from the holder.   The conditioning system includes a conditioning conductor layer that does not anodize in solution, and the conditioning conductor layer is electrically connected to a potential difference that causes one of reducing the number of accumulated particles and reducing the size of the accumulated particles. 43. The apparatus of claim 42, adapted to.   47. The apparatus of claim 46, wherein the conditioning conductor layer is attached to the holder when the workpiece is removed from the holder.   The conditioning system and the electrochemical mechanical processing system are located in the lower chamber of a vertically configured chamber system, the vertically configured chamber system also includes an upper chamber that includes a cleaning system for cleaning the workpiece, and an upper chamber 43. The apparatus of claim 42, comprising a movable guard adapted to separate the lower chamber from the upper chamber when used.   49. The adjustment system includes a plurality of brushes and a brush movable assembly attached to an adjustment substrate, wherein the brush movable assembly is configured to move the plurality of brushes on the workpiece surface effect device and adjusts the workpiece surface effect device. The device described.   50. The apparatus of claim 49, wherein the conditioning system is adapted to act on the workpiece surface effect device while the cleaning system is adapted to act on the workpiece.   The plurality of brushes and the conditioning substrate have a conductive coating that is not anodized in the solution placed in the lower chamber, and the conditioning substrate reduces the number of accumulated particles and reduces the size of the accumulated particles. 50. The apparatus of claim 49, adapted to be electrically connected to a potential difference that causes one.   52. The apparatus of claim 51, wherein the conditioning system is adapted to act on the workpiece surface effect device while the cleaning system is adapted to act on the workpiece.   52. The device of claim 51, wherein the conductive coating comprises an inert conductor.   The conditioning system includes a conditioning conductor layer that is disposed in the lower chamber and does not anodize in the solution, and the conditioning conductor layer is one of reducing the number of accumulated particles and reducing the size of the accumulated particles. 49. The device according to claim 48, adapted to be electrically connected to the potential difference that occurs.   55. The device of claim 54, wherein the conditioning conductor layer comprises an inert conductor.   49. The apparatus of claim 48, wherein the conditioning system is adapted to act on the workpiece surface effect device while the cleaning system is adapted to act on the workpiece.   The electrochemical mechanical processing system is located within the lower chamber of a vertically configured chamber system, the vertically configured chamber system also includes an upper chamber, and a lower chamber from the upper chamber when the upper chamber is used. 43. The apparatus of claim 42, comprising a movable guard adapted to separate.   62. The apparatus of claim 61, further comprising a cleaning system disposed in the upper chamber for cleaning the workpiece.   61. The apparatus of claim 60, wherein the holder is further adapted to hold an adjustment system when the holder no longer holds the workpiece.   63. The apparatus of claim 62, wherein the adjustment system includes a plurality of brushes attached to the adjustment substrate, the plurality of brushes configured for relative movement with the workpiece surface effect device to adjust the workpiece surface effect device. .   The plurality of brushes and the conditioning substrate have a conductive coating that is not anodized in the solution disposed in the lower chamber, and the conditioning substrate reduces the number of accumulated particles and reduces the size of the accumulated particles. 64. The apparatus of claim 63, adapted to be electrically connected to a potential difference that causes one.   The apparatus of claim 64, wherein the conductive coating comprises an inert conductor.   The conditioning system includes a conditioning conductor layer that is not anodized in a solution disposed in the lower chamber, the conditioning conductor layer being one of reducing the number of accumulated particles and reducing the size of the accumulated particles. 63. The apparatus of claim 62, adapted to be electrically connected to a potential difference that causes   The apparatus of claim 66, wherein the conditioning conductor layer comprises an inert conductor. A system for processing a workpiece to remove particles in the workpiece surface effect device and using the workpiece surface effect device with a plating solution for processing the workpiece,
A holder adapted to receive the workpiece and move the workpiece proximate to the workpiece surface effect device; and
Suitable for depositing conductive material on workpiece through plating solution using workpiece surface effect device in close proximity to workpiece and using first potential difference applied between electrode and workpiece Equipment,
At least a first portion of particles that accumulates on the workpiece surface effect device during the deposition of the conductive material using a second potential difference applied between the electrode and the conditioning conductor layer of the conditioning member. A system comprising an adjustment member having an adjustment conductor layer adapted to assist in removing the second potential difference, wherein the second potential difference is opposite in polarity to the first potential difference.   69. The system of claim 68, wherein the conditioning member further comprises a mechanical contact member to mechanically remove at least a second portion of particles that accumulate on the workpiece surface effect device.   69. The system of claim 68, wherein the holder is further adapted to hold the adjustment member when the holder no longer holds the workpiece. A method of processing a workpiece to remove particles on the workpiece surface effect device and using the workpiece surface effect device with a plating solution to process the workpiece,
Applying a first potential difference between the electrode and the workpiece;
Depositing a conductive material on the workpiece via the plating solution in the presence of a first potential difference with the top surface of the workpiece surface effect device proximate to the workpiece;
Having at least one mechanical contact member with respect to the upper surface of the workpiece surface effect device to mechanically remove at least some of the particles that accumulate on the workpiece surface effect device during deposition of the conductive material from the workpiece surface effect device; A method comprising the step of moving the adjustment member so as to be removed.   At least one mechanical contact member having a plurality of conditioning brushes, and applying a second potential difference to the plurality of conductive brushes during the process to further assist in removing particles from the workpiece surface effect device 72. The method of claim 71, comprising:   The method of claim 72, wherein the moving step causes a relative rotational movement between the at least one mechanical contact member and the workpiece surface effect device.   74. The method of claim 73, wherein the moving step causes a relative lateral movement between the at least one mechanical contact member and the workpiece surface effect device.   72. The method of claim 71, wherein the moving step causes a relative movement between at least one mechanical contact member comprising a plurality of brushes and the workpiece surface effect device.   The workpiece surface effect device includes a plurality of channels through which the plating solution passes, the plating solution continues to pass through the plurality of channels during the moving process, and at least one mechanical contact member of the electrode and the adjustment member during the moving process 72. The method of claim 71, wherein a second potential difference is applied between the first potential difference and the second potential difference is opposite in polarity to the first potential difference that assists in removing conductive particles from the workpiece surface effect device. . Removing the workpiece from where it was placed in proximity to the workpiece surface effect device upon completion of the action step;
72. The method of claim 71, further comprising the step of bringing the adjustment member proximate to the workpiece surface effect device so that the adjustment step is subsequently performed.   78. The method of claim 77, wherein both the removal step and the proximity step use a holder, the holder holds the workpiece during the deposition step, and the holder holds the adjustment member during the transfer step. A system for processing a workpiece to remove particles on the workpiece surface effect device, and using the workpiece surface effect device with a plating solution to process the workpiece,
Suitable for depositing conductive material on a workpiece by a workpiece surface effect device in close proximity to the workpiece via a plating solution in the presence of a first potential difference applied between the electrode and the workpiece With the equipment
Accept the workpiece, move the workpiece in proximity to the workpiece surface effect device to allow the apparatus to deposit conductive material, and place the workpiece in proximity to the workpiece surface effect device upon completion of the apparatus deposition A holder adapted to move, and
At least a portion having at least one mechanical contact member adapted to move relative to the upper surface of the workpiece surface effect device and accumulating on the workpiece surface effect device while depositing the conductive particles. A system comprising an adjustment member adapted to mechanically remove particles from a workpiece surface effect device.   The apparatus further accumulates on the workpiece surface effect device while depositing the conductive material using a second potential difference applied between the electrode and at least one mechanical contact member of the conditioning member. Adapted to remove at least a second portion of particles, wherein the second potential difference is of the opposite polarity to the first potential difference, the at least one mechanical contact layer is comprised of an inert conductor layer, and at least 1 80. The system of claim 79, wherein the conductors of the two mechanical contact layers are not anodized in the plating solution.   80. The apparatus of claim 79, wherein the holder is further adapted to hold an adjustment member when the holder no longer holds the workpiece. A processing method comprising reducing a buildup of particles on a workpiece surface effect device, wherein the workpiece surface effect device is used with a plating solution to act on the first and second workpieces, comprising:
A workpiece surface effect device proximate to the first workpiece uses a plating solution to deposit a first conductive material on the first workpiece, and the workpiece surface effect device and the first Causing relative rotational movement in a first rotational direction between the workpiece and one workpiece;
Replacing the first workpiece with a second workpiece;
A workpiece surface effect device proximate to the second workpiece deposits a second conductive material on the second workpiece, and the deposition of the workpiece surface effect device and the second workpiece during deposition. A relative rotational movement in a second direction of rotation opposite to the first direction of rotation in between and at least some particles that accumulate on the workpiece surface effect device during the deposition of the first conductive material And a step of removing from the working device.   83. The method of claim 82, wherein causing relative rotation comprises rotating one of the workpiece surface effect device and the first or second workpiece.   83. The method of claim 82, wherein the step of causing relative rotation rotates both the workpiece surface effect device and the first or second workpiece. A system for processing a workpiece to remove particles on the workpiece surface effect device, and using the workpiece surface effect device with a plating solution to process the workpiece,
A deposition apparatus disposed in the lower chamber for depositing a conductive material from the plating solution onto the workpiece using a workpiece surface effect device proximate to the workpiece;
An adjustment member disposed in the lower chamber and adapted to remove at least some particles that accumulate on the workpiece surface effect device during deposition of the conductive material by the deposition apparatus;
A system comprising a holder adapted to place a workpiece in the lower chamber while the deposition apparatus is in use.   86. The system of claim 85, further comprising a cleaning system disposed in the upper chamber, wherein the upper and lower chambers can be separated using a movable guard.   86. The system of claim 85, wherein the adjustment member is adapted for relative motion with the workpiece surface effect device and the conductive particles are mechanically removed from the workpiece surface effect device.   86. The system of claim 85, wherein the conditioning member is adapted to apply a potential difference between the conditioning member and the workpiece surface effect device and assists in removing particles from the workpiece surface effect device.   The system of claim 85, wherein the holder is adapted to rotate about the first axis.   90. The system of claim 89, wherein the holder is further adapted to move from end to end within the lower chamber.   86. The system of claim 85, wherein the deposition apparatus comprises an electrochemical mechanical deposition apparatus.   The system of claim 85, wherein the adjustment member comprises a brush member.   94. The system of claim 92, further comprising a brush assembly that moves the combined brush members laterally, wherein the brush assembly is disposed in the lower chamber.   94. The system of claim 93, wherein the adjustment member is adapted to act on the workpiece surface effect device, while another system acts on the workpiece in the upper chamber.   95. The system of claim 94, wherein the brush assembly comprises a drive that moves the brush member laterally.

Images