JP2005354099A - Laser device - Google Patents

Laser device Download PDF

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Publication number
JP2005354099A
JP2005354099A JP2005212678A JP2005212678A JP2005354099A JP 2005354099 A JP2005354099 A JP 2005354099A JP 2005212678 A JP2005212678 A JP 2005212678A JP 2005212678 A JP2005212678 A JP 2005212678A JP 2005354099 A JP2005354099 A JP 2005354099A
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Prior art keywords
lead
laser element
resin frame
laser
resin
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JP2005212678A
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JP3970292B2 (en
Inventor
Yasuhiro Watabe
泰弘 渡部
Yasuyuki Bessho
靖之 別所
Masaharu Honda
正治 本多
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Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
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Tokyo Sanyo Electric Co Ltd
Tottori Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
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Priority to JP2005212678A priority Critical patent/JP3970292B2/en
Publication of JP2005354099A publication Critical patent/JP2005354099A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

<P>PROBLEM TO BE SOLVED: To prevent a resin leakage and maintain accuracy of mounting reference in a reference part. <P>SOLUTION: The laser device comprises a laser element 20, a lead 2 in which the laser element is arranged, and a resin frame 24 for protecting the element 20. The lead comprises: references parts 10 and 11, which serve as mounting reference, to the right and left front parts thereof; and projection parts 5 and 6, which project farther front than the references parts, between right and left references parts, wherein the right and left front ends of the resin frame are located on the projection parts. The projection parts prevent the resin leakage to references parts 10 and 11. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明はレーザ装置に関する。   The present invention relates to a laser apparatus.

従来、この種の装置は、例えば特許文献１に示されている。この公報によると、リードと、リードに設けられたレーザ素子と、レーザ素子を保護する樹脂枠が示されている。そして、リードの上辺の１部と、両側面とが、リードの取付け基準部として設定されている。
特開平６−４５７０３号公報 Conventionally, this kind of apparatus is shown by patent document 1, for example. According to this publication, a lead, a laser element provided on the lead, and a resin frame for protecting the laser element are shown. One part of the upper side of the lead and both side surfaces are set as the lead attachment reference part.
JP-A-6-45703

しかし上記装置では、取付け基準部とされるリードの上辺の１部に、樹脂漏れを生じ、取付け基準部が不正確となる第１の欠点が有る。本発明者がその原因を究明したところ、樹脂枠の外形がリードの上辺よりも外側に位置しているので、プレス時に生じたリードの抜きだれに樹脂が溜るためである事が分った。   However, in the above apparatus, there is a first drawback that a resin leak occurs in one part of the upper side of the lead, which is the attachment reference portion, and the attachment reference portion becomes inaccurate. As a result of investigation of the cause by the present inventor, it has been found that since the outer shape of the resin frame is located outside the upper side of the lead, the resin accumulates in the lead extraction generated during pressing.

また上記装置では、レーザ光がリードの表面で反射しない様に、リードの先端にレーザ素子を配置している。そのために、このレーザ装置を取扱う時に、レーザ素子に指やピンセット等が接触し易い第２の欠点が有る。
そこで、本発明はこの様な従来の欠点を考慮し、樹脂漏れを生じにくい、かつレーザ素子に指などが接触しにくいレーザ装置を提供する。 In the above apparatus, a laser element is disposed at the tip of the lead so that the laser beam is not reflected on the surface of the lead. Therefore, when handling this laser apparatus, there is a second drawback that a finger, tweezers, etc. are likely to come into contact with the laser element.
Accordingly, the present invention provides a laser device that takes into account such conventional drawbacks and is unlikely to cause resin leakage and to prevent a finger or the like from coming into contact with the laser element.

本発明は、レーザ素子と、前記レーザ素子を配置するリードと、前記レーザ素子を保護する樹脂枠とを備え、前記リードは、その左右の前方部分に取り付け基準となる基準部と、この左右の基準部の間に前記基準部よりも前方に突出した突起部を備え、前記突出部の上に前記樹脂枠の左右の前端が位置する。前記左右の基準部に隣接する側の前記突起部の縁、並びに前記突起部に繋がる前記左右の基準部が見える構成とすることができる。   The present invention includes a laser element, a lead on which the laser element is disposed, and a resin frame that protects the laser element, and the lead includes a reference portion that serves as a mounting reference at the left and right front portions thereof, Protruding portions that protrude forward from the reference portion are provided between the reference portions, and the left and right front ends of the resin frame are positioned on the protruding portion. An edge of the protrusion on the side adjacent to the left and right reference portions and the left and right reference portions connected to the protrusion can be seen.

樹脂漏れに起因して基準部に不所望の樹脂が付かないので、基準部の取付け基準は正確さが維持される。   Since undesired resin is not attached to the reference portion due to resin leakage, the mounting reference of the reference portion is kept accurate.

以下に、図１ないし図３に従い、本発明の実施の形態に係るレーザ装置１を説明する。図１はレーザ装置１の正面図、図２はレーザ装置１の平面図、図３は図１のＡ１Ａ２断面図である。これらの図に於て、リード２は例えば、メッキ処理された銅等の金属材料から成り、厚みが例えば０．２〜１．０ｍｍである。   A laser apparatus 1 according to an embodiment of the present invention will be described below with reference to FIGS. 1 is a front view of the laser device 1, FIG. 2 is a plan view of the laser device 1, and FIG. 3 is a cross-sectional view taken along line A1A2 of FIG. In these figures, the lead 2 is made of, for example, a plated metal material such as copper and has a thickness of 0.2 to 1.0 mm, for example.

リード２は正面から見れば（図１参照）、略Ｔ字状に形成されている。リード２は、端子部３と、基部４と、突出部５、６と、切欠部７等により、構成されている。   The lead 2 is formed in a substantially T shape when viewed from the front (see FIG. 1). The lead 2 includes a terminal portion 3, a base portion 4, projecting portions 5 and 6, a cutout portion 7 and the like.

端子部３は平面から見れば、略長方形状のものである。基部４は端子部３につながって形成され、外形が略長方形（部分的に切欠きが有る）状のものである。   The terminal portion 3 has a substantially rectangular shape when viewed from the plane. The base portion 4 is formed to be connected to the terminal portion 3 and has a substantially rectangular shape (partially cutout).

基部４の外形に於て、縦方向（Ｙ方向）に沿って、基準部８、９が形成され、横方向（Ｘ方向）に沿って、基準部１０、１１が形成されている。レーザ装置１が取付けられる相手側部品（図示せず）の内面に、上記基準部８、９、１０、１１が当接する事により、レーザ装置１は相手側部品に、正確な位置にて位置決めされる。上記理由により、基準部８、９、１０、１１は、リード２の取付け基準となる。
基準部１０、１１に各々隣接して突出部５、６が形成され、突出部５、６の間に、切欠部７が形成されている。突出部５、６は基準部１０、１１に対し、縦方向（Ｙ方向）の上側に突出したものである。即ち、突出部５、６は基準部１０、１１より外側（後述のレーザ素子から遠い側）に設けられている。
この様に、リード２のレーザ素子（後述）の取付け部前方には、切欠部７が形成され、切欠部７の両隣に、突出部５、６が形成されている。また、リード２の基部４の適所には、貫通孔１２、１３が形成されている。
受光素子１６は例えばＰ−Ｉ−Ｎ構造から成るシリコン系結晶に、表面電極１７、１８と、裏面電極（図示せず）が設けられたものである。表面電極１８は、Ｐ型拡散領域から成る受光部１９とオーミック接触して形成されている。受光素子１６の裏面電極は、銀ペースト等の導電性接着剤を介して、リード２の基部４上に固着されている。
レーザ素子２０は例えば、活性層とそれを挟むクラッド層から成るＧａＡｌＡｓ層からできている。レーザ素子２０は、前方（Ａ１方向）に、主出射面が位置する様に、レーザ素子２０の裏面電極（図示せず）が、受光素子１６の表面電極１７上に、銀ペースト等を介して固着されている。この様に、レーザ素子２０はリード２上に設けられている。
レーザ素子２０は、後方にモニター用の副出射が行われる様に、後面の反射膜の反射率が、前面のそれよりも高い様に形成されている。
他のリード１４、１５は共に、例えば、メッキが施こされた銅等の金属材料から成る。他のリード１４、１５は、リード２の端子部３に隣接した位置に配置されている。
金属細線２１は金等から成り、レーザ素子２０の表面電極と、リード２の基部４との間を結ぶ様に配線されている。金属細線２２は金等から成り、受光素子１６の表面電極１７と、他のリード１４との間を結ぶ様に配線されている。金属細線２３は金等から成り、受光素子１６の表面電極１８と、他のリード１５との間を結ぶ様に配線されている。
樹脂枠２４は例えば、ポリカーボネート樹脂又はエポキシ樹脂等から成る。樹脂枠２４は、レーザ素子２０の出射面を露出する様に、例えば平面から見て、略コ字状に、かつ、リード２と、他のリード１４、１５の各表面と各裏面を挟む様に、トランスファーモールドによって形成されている。
この様に、樹脂枠２４は、レーザ素子２０を保護するものである。また、樹脂枠２４は、リード２の基部４に形成された貫通孔１２、１３を介して、リード２の表面上の部分２５と、リード２の裏面上の部分２６がつながる様に、形成されている。
樹脂枠２４の外形２７はリード２の先端より内側（レーザ素子２０に近い側）に位置する様に、即ち、リード２の突出部５、６より内側に位置する様に、設けられている。また、樹脂枠２４の外形２８、２９は、リード２の両側より内側（レーザ素子２０に近い側）に位置する様に、設けられている。
即ち、樹脂枠２４の外形２７、２８、２９は、リード２の取付け基準となる基準部８、９、１０、１１より内側（レーザ素子２０に近い側）に位置する様に、設けられている。この様に構成する事により、樹脂枠２４を成型した時に、基準部８、９、１０、１１に於ける、プレス時に生じたリード２の抜きだれ（打抜き加工時に、打抜きバリの反対側に生じる断面が少し曲面になる事）による、樹脂漏れを、防止する事ができる。
レーザ素子２０の主出射面を露出する様に（即ち、主出射光の邪魔にならない様に）、樹脂枠の前方には、窓部３１が設けられている。以上の部品により、レーザ装置１が構成されている。
上述の様に、レーザ素子２０は受光素子１６上に載置されているが、レーザ素子２０は受光素子１６の前方のリード２上に直接、又はサブマウントを介して載置されても良い。
上記実施形態は、リードと、前記リードに設けられたレーザ素子と、前記レーザ素子を保護する樹脂枠とを備え、前記樹脂枠の外形が、前記リードの先端より内側に位置し、かつ前記リードの両側より内側に位置する様に構成する。この様に、樹脂枠の外形を、リードの先端およびリードの両側より内側に位置させる事により、上記先端および両側に於ける、プレス時に生じたリードの抜きだれによる、樹脂枠に於ける樹脂漏れを防止する事ができる。 In the outer shape of the base portion 4, reference portions 8 and 9 are formed along the vertical direction (Y direction), and reference portions 10 and 11 are formed along the horizontal direction (X direction). When the reference portions 8, 9, 10, 11 are brought into contact with the inner surface of a counterpart component (not shown) to which the laser device 1 is attached, the laser device 1 is positioned at an accurate position on the counterpart component. The For the above reasons, the reference portions 8, 9, 10, and 11 serve as attachment standards for the leads 2.
Protruding portions 5 and 6 are formed adjacent to the reference portions 10 and 11, and a notch 7 is formed between the protruding portions 5 and 6. The protrusions 5 and 6 protrude from the reference parts 10 and 11 in the vertical direction (Y direction). That is, the protrusions 5 and 6 are provided outside the reference portions 10 and 11 (on the side far from a laser element described later).
In this way, the notch 7 is formed in front of the attachment portion of the laser element (described later) of the lead 2, and the protrusions 5 and 6 are formed on both sides of the notch 7. Further, through holes 12 and 13 are formed at appropriate positions of the base 4 of the lead 2.
The light receiving element 16 is formed by providing front surface electrodes 17 and 18 and a back surface electrode (not shown) on a silicon-based crystal having a PIN structure, for example. The surface electrode 18 is formed in ohmic contact with the light receiving portion 19 formed of a P-type diffusion region. The back electrode of the light receiving element 16 is fixed on the base 4 of the lead 2 via a conductive adhesive such as silver paste.
The laser element 20 is made of, for example, a GaAlAs layer including an active layer and a clad layer sandwiching the active layer. The laser element 20 has a back electrode (not shown) of the laser element 20 on the surface electrode 17 of the light receiving element 16 via silver paste or the like so that the main emission surface is located in the front (A1 direction). It is fixed. Thus, the laser element 20 is provided on the lead 2.
The laser element 20 is formed so that the reflectance of the reflective film on the rear surface is higher than that on the front surface so that the secondary emission for monitoring is performed rearward.
The other leads 14 and 15 are both made of, for example, a metal material such as plated copper. The other leads 14 and 15 are arranged at positions adjacent to the terminal portion 3 of the lead 2.
The fine metal wire 21 is made of gold or the like and wired so as to connect the surface electrode of the laser element 20 and the base 4 of the lead 2. The fine metal wire 22 is made of gold or the like, and is wired so as to connect the surface electrode 17 of the light receiving element 16 and the other lead 14. The fine metal wires 23 are made of gold or the like, and are wired so as to connect the surface electrode 18 of the light receiving element 16 and the other leads 15.
The resin frame 24 is made of, for example, polycarbonate resin or epoxy resin. The resin frame 24 has, for example, a substantially U-shape when viewed from the top so as to expose the emission surface of the laser element 20 and sandwiches the front and back surfaces of the lead 2 and the other leads 14 and 15. In addition, it is formed by transfer molding.
Thus, the resin frame 24 protects the laser element 20. The resin frame 24 is formed so that the portion 25 on the surface of the lead 2 and the portion 26 on the back surface of the lead 2 are connected via the through holes 12 and 13 formed in the base portion 4 of the lead 2. ing.
The outer shape 27 of the resin frame 24 is provided so as to be located on the inner side (side closer to the laser element 20) than the tip of the lead 2, that is, located on the inner side of the protruding portions 5 and 6 of the lead 2. Further, the outer shapes 28 and 29 of the resin frame 24 are provided so as to be located on the inner side (side closer to the laser element 20) than both sides of the lead 2.
That is, the outer shapes 27, 28, and 29 of the resin frame 24 are provided so as to be located on the inner side (side closer to the laser element 20) than the reference portions 8, 9, 10, and 11 that are the attachment reference of the lead 2. . By configuring in this way, when the resin frame 24 is molded, the lead 2 is removed in the reference portions 8, 9, 10, 11 (which occurs on the opposite side of the punching burr during the punching process). It is possible to prevent resin leakage due to a slightly curved cross section.
A window 31 is provided in front of the resin frame so as to expose the main emission surface of the laser element 20 (that is, not to obstruct the main emission light). The laser device 1 is configured by the above components.
As described above, the laser element 20 is mounted on the light receiving element 16, but the laser element 20 may be mounted directly on the lead 2 in front of the light receiving element 16 or via a submount.
The embodiment includes a lead, a laser element provided on the lead, and a resin frame that protects the laser element, and an outer shape of the resin frame is located inside a tip of the lead, and the lead It is configured so as to be located on the inner side from both sides. In this way, by placing the outer shape of the resin frame inside the tip of the lead and both sides of the lead, the resin leakage in the resin frame due to the lead being pulled out during pressing at the tip and both sides. Can be prevented.

上記実施形態は、リードと、前記リードに設けられたレーザ素子と、前記レーザ素子を保護する樹脂枠とを備え、前記樹脂枠の外形が、前記リードの取付け基準となる基準部より内側に位置する様に、構成する。この様に、樹脂枠の外形を、リードの基準部より内側に位置させる事により、上記基準部に於ける、プレス時に生じたリードの抜きだれによる、樹脂枠に於ける樹脂漏れを防止できる。その結果、基準部に不所望の樹脂が付かないので、基準部の取付け基準は正確さが維持される。   The embodiment includes a lead, a laser element provided on the lead, and a resin frame that protects the laser element, and an outer shape of the resin frame is located on an inner side of a reference portion that is a reference for mounting the lead Configure as you do. As described above, by positioning the outer shape of the resin frame on the inner side of the reference portion of the lead, it is possible to prevent the resin leakage in the resin frame due to the lead being pulled out at the reference portion at the time of pressing. As a result, since an undesired resin is not attached to the reference portion, the accuracy of the reference for mounting the reference portion is maintained.

上記実施形態は、前記リードのレーザ素子取付け部前方は切欠部が形成され、前記切欠部の隣に突出部が設けられる構成とする。この様に、レーザ素子の前方に於て、リードを切欠くので、レーザ光がリードの表面で反射される事を防止できる。また、切欠部の隣に突出部を設けるので、レーザ装置を取扱う時に指やピンセット等がレーザ素子に接触しにくくなる。   In the above embodiment, a notch is formed in front of the laser element mounting portion of the lead, and a protrusion is provided next to the notch. Thus, since the lead is cut out in front of the laser element, it is possible to prevent the laser light from being reflected from the surface of the lead. Further, since the protrusion is provided next to the notch, it is difficult for fingers, tweezers, etc. to contact the laser element when handling the laser device.

上記実施形態は、前記突出部は前記基準部より外側に設けられ、前記樹脂枠の外形は、前記突出部の先端より内側に設けられる構成とする。この様に、樹脂枠の外形を、突出部の先端より内側に位置させる事により、上記先端に於ける、プレス時に生じたリードの抜きだれによる、樹脂枠に於ける樹脂漏れを防止できる。   In the above embodiment, the protrusion is provided outside the reference part, and the outer shape of the resin frame is provided inside the tip of the protrusion. As described above, by positioning the outer shape of the resin frame inside the tip of the protruding portion, it is possible to prevent the resin leak in the resin frame due to the lead being pulled out at the tip.

上記実施形態は、前記リードに貫通孔が形成され、前記樹脂枠は、前記貫通孔を介して、前記リードの表面上の部分と、前記リードの裏面上の部分がつながっている構成とする。上記構成により、フレームを挟んで上下の樹脂がつながるので、リードが樹脂枠から容易に分離する事を防止できる。   In the above embodiment, a through hole is formed in the lead, and the resin frame is configured such that a portion on the surface of the lead and a portion on the back surface of the lead are connected via the through hole. With the above configuration, since the upper and lower resins are connected with the frame interposed therebetween, it is possible to prevent the lead from being easily separated from the resin frame.

フレームパッケージを用いた半導体レーザ装置に適用することができる。   The present invention can be applied to a semiconductor laser device using a frame package.

本発明の実施の形態に係るレーザ装置の正面図である。It is a front view of the laser apparatus which concerns on embodiment of this invention. 上記レーザ装置の平面図である。It is a top view of the said laser apparatus. 図１のＡ１Ａ２断面図である。It is A1A2 sectional drawing of FIG.

符号の説明Explanation of symbols

２ リード
２０ レーザ素子
２４ 樹脂枠
２７、２８、２９ 樹脂枠２４の外形 2 Lead 20 Laser element 24 Resin frame 27, 28, 29 Outline of resin frame 24

Claims (2)

レーザ素子と、前記レーザ素子を配置するリードと、前記レーザ素子を保護する樹脂枠とを備え、前記リードは、その左右の前方部分に取り付け基準となる基準部と、この左右の基準部の間に前記基準部よりも前方に突出した突起部を備え、前記突出部の上に前記樹脂枠の左右の前端が位置する事を特徴とするレーザ装置。 A laser element; a lead on which the laser element is disposed; and a resin frame that protects the laser element. A laser device comprising: a protrusion portion protruding forward from the reference portion; and the left and right front ends of the resin frame are positioned on the protrusion portion. 前記左右の基準部に隣接する側の前記突起部の縁、並びに前記突起部に繋がる前記左右の基準部が見える事を特徴とする請求項１記載のレーザ装置。 2. The laser device according to claim 1, wherein an edge of the protruding portion adjacent to the left and right reference portions and the left and right reference portions connected to the protruding portion can be seen.
JP2005212678A 2005-07-22 2005-07-22 Laser equipment Expired - Fee Related JP3970292B2 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008066511A (en) * 2006-09-07 2008-03-21 Fuji Xerox Co Ltd Optical transmission module, method of manufacturing optical transmission module, and optical transmission apparatus
US8422522B2 (en) 2008-06-17 2013-04-16 Sharp Kabushiki Kaisha Semiconductor laser device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008066511A (en) * 2006-09-07 2008-03-21 Fuji Xerox Co Ltd Optical transmission module, method of manufacturing optical transmission module, and optical transmission apparatus
US8422522B2 (en) 2008-06-17 2013-04-16 Sharp Kabushiki Kaisha Semiconductor laser device

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