JP2005353764A - Dumet wire for glass-sealed semiconductor device - Google Patents

Dumet wire for glass-sealed semiconductor device Download PDF

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Publication number
JP2005353764A
JP2005353764A JP2004171594A JP2004171594A JP2005353764A JP 2005353764 A JP2005353764 A JP 2005353764A JP 2004171594 A JP2004171594 A JP 2004171594A JP 2004171594 A JP2004171594 A JP 2004171594A JP 2005353764 A JP2005353764 A JP 2005353764A
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wire
copper
glass
oxide film
cuprous oxide
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Masao Sakuta
正男 作田
Takeshi Sugai
健 菅井
Kenshin Ko
建進 洪
Shinno Ho
進能 彭
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SUM PAC CORP
SUM-PAC CORP
Sumitomo Electric Industries Ltd
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SUM PAC CORP
SUM-PAC CORP
Sumitomo Electric Industries Ltd
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Priority to JP2004171594A priority Critical patent/JP2005353764A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal Rolling (AREA)
  • Metal Extraction Processes (AREA)
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a high-quality Dumet wire 1, having a flat part 9 on the outer surface thereof and moreover, having no minute cracks in a copper suboxide film of the outermost surface, at a low cost. <P>SOLUTION: The Dumet wire 1 for glass-sealed semiconductor device is constituted of a core 2, a copper layer or a copper containing alloy layer 3 covering the periphery of the core 2, and the cuprous oxide film 4 covering the surface of the copper layer or the copper-containing alloy layer 3. In such a Dumet wire 1, generation of minute cracks in the cuprous oxide film 4 is prevented, by forming previously a flat part 9 on at least a part of surface of a wire consisting of the core 2 and the copper layer or the copper containing alloy layer 3 covering the periphery of the core, under the condition before forming the copper suboxide film 4. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

この発明は、心金と、この心金の周囲を覆う銅層又は銅含有合金層と、銅層又は銅含有合金層の表面を覆う亜酸化銅膜とからなるガラス封止型半導体装置用ジュメット線に関するものである。   The present invention relates to a glass sealed semiconductor device jumet comprising a mandrel, a copper layer or a copper-containing alloy layer covering the periphery of the mandrel, and a cuprous oxide film covering the surface of the copper layer or the copper-containing alloy layer. It is about the line.

ジュメット線１は、例えば、図１に示すように、鉄−ニッケル製の心金２の周囲に、銅層又は銅含有合金層３を設け、この銅層又は銅含有合金層３の表面に、亜酸化銅膜４を設けた構造である。
このジュメット１線は、図２に示すように、ガラス封止型半導体装置を製造する場合に、ダイオード等の半導体素子５のリード端子６ａ、６ｂとして使用され、周面がガラス製の筒状の封止体７によって封着されるようになっている。
ところで、ジュメット線１の周囲を、ガラス製の封止体７によって封着する場合、ジュメット線１の周囲に、筒状の封止体７を被せ、封止体７を加熱すると、図３（ａ）に示す封着前の状態から、（ｂ）の状態を経て、（ｃ）に示すように、ジュメット線１の周囲と筒状の封止体７の内周面との間の空間Ａが次第に減り、封着が完了する。
ところが、この封着工程において、ジュメット線１の周囲と筒状の封止体７の内周面との間の空間Ａに存在するエアーの抜けが悪いと、封着後に、図４に示すように、封止体７の内面にエアー玉８が残るという問題がある。 For example, as shown in FIG. 1, the jumet wire 1 is provided with a copper layer or a copper-containing alloy layer 3 around an iron-nickel mandrel 2, and on the surface of the copper layer or the copper-containing alloy layer 3, In this structure, a cuprous oxide film 4 is provided.
As shown in FIG. 2, this dumet 1 wire is used as a lead terminal 6a, 6b of a semiconductor element 5 such as a diode when manufacturing a glass-sealed semiconductor device, and has a cylindrical surface made of glass. It is sealed by the sealing body 7.
By the way, when sealing the circumference | surroundings of the dumet wire 1 with the glass-made sealing body 7, when the cylindrical sealing body 7 is covered on the circumference | surroundings of the jumet line 1 and the sealing body 7 is heated, FIG. From the state before sealing shown in a), through the state of (b), and as shown in (c), the space A between the periphery of the jumet wire 1 and the inner peripheral surface of the cylindrical sealing body 7 Gradually decreases and sealing is completed.
However, in this sealing step, if the air present in the space A between the periphery of the jumet wire 1 and the inner peripheral surface of the cylindrical sealing body 7 is poor, as shown in FIG. In addition, there is a problem that the air ball 8 remains on the inner surface of the sealing body 7.

この封着工程におけるエアー抜けを良好にするために、従来、ジュメット線１を平面加工して、図５又は図６に示すように、ジュメット線１の外面に平坦部９を形成することが行われている。図５は、平坦部９を２箇所設けた例であり、図６は、平坦部９を３箇所設けた例である。
ジュメット線１の外面に平坦部９を形成しておくと、図７（ａ）に示す封着前の状態から、（ｂ）の状態を経て、（ｃ）、（ｄ）に示すように、封着過程が進んでいく際に、（ｃ）の状態で、ジュメット線１の外面に平坦部９の部分にエアー抜き通路Ｂが形成され、このエアー抜き通路Ｂからエアーがスムーズに排出され、封止体７の内面にエアー玉８が残り難くなる。 In order to improve the air escape in this sealing step, conventionally, the flat surface 9 is formed on the outer surface of the dumet wire 1 as shown in FIG. It has been broken. FIG. 5 is an example in which two flat portions 9 are provided, and FIG. 6 is an example in which three flat portions 9 are provided.
When the flat portion 9 is formed on the outer surface of the dumet wire 1, from the state before sealing shown in FIG. 7 (a), through the state (b), as shown in (c) and (d), When the sealing process proceeds, in the state of (c), an air vent passage B is formed in the portion of the flat portion 9 on the outer surface of the dumet wire 1, and air is smoothly discharged from the air vent passage B, The air ball 8 hardly remains on the inner surface of the sealing body 7.

しかしながら、ジュメット線１の外面に平坦部９を形成することは、封着工程におけるエアー抜きを良好にすることができても、次のような問題があった。
従来、ジュメット線１の外面に平坦部９を形成する平面加工は、リード加工機上に、加圧ローラー等の平面加工機を設置して行っているため、平面加工機をリード加工機毎に設置する必要があり、設備コストが高くなる。
また、ジュメット線１の線径のバラツキに応じて各平面加工機の調整が必要になり、その調整に時間がかかり、平面加工の精度も低い。
また、平面加工によって、ジュメット線１の最外面の亜酸化銅膜４に微小クラックが発生しやすく、この微小クラックによってガラス封着性が悪化するという欠陥があった。 However, the formation of the flat portion 9 on the outer surface of the dumet wire 1 has the following problems even if the air bleeding in the sealing process can be improved.
Conventionally, the flat processing for forming the flat portion 9 on the outer surface of the dumet wire 1 is performed by installing a flat processing machine such as a pressure roller on the lead processing machine. It is necessary to install it, and the equipment cost becomes high.
Further, it is necessary to adjust each plane processing machine according to the variation in the diameter of the jumet wire 1, and it takes time to adjust the plane processing machine, and the accuracy of the plane processing is low.
In addition, there is a defect that a fine crack is likely to occur in the cuprous oxide film 4 on the outermost surface of the dumet wire 1 due to the planar processing, and the glass sealing property deteriorates due to the fine crack.

そこで、この発明は、外面に平坦部を有し、しかも最外面の亜酸化銅膜に微小クラックのない高品質のジュメット線を、ローコストで提供しようとするものである。   Therefore, the present invention intends to provide a high-quality dumet wire having a flat portion on the outer surface and having no microcracks in the outermost cuprous oxide film at a low cost.

この発明は、心金と、この心金の周囲を覆う銅層又は銅含有合金層と、銅層又は銅含有合金層の表面を覆う亜酸化銅膜とからなるガラス封止型半導体装置用ジュメット線において、上記亜酸化銅膜を形成する前の状態で、心金と、この心金の周囲を覆う銅層又は銅含有合金層とからなる線材の表面の少なくとも一部に予め平坦部を形成したことを特徴とする。   The present invention relates to a glass sealed semiconductor device jumet comprising a mandrel, a copper layer or a copper-containing alloy layer covering the periphery of the mandrel, and a cuprous oxide film covering the surface of the copper layer or the copper-containing alloy layer. In the wire, in a state before forming the cuprous oxide film, a flat portion is previously formed on at least a part of the surface of the wire consisting of a mandrel and a copper layer or a copper-containing alloy layer covering the periphery of the mandrel It is characterized by that.

上記亜酸化銅膜を形成する前に、心金と、この心金の周囲を覆う銅層又は銅含有合金層とからなる線材の表面に、平坦部を形成しておくことにより、その後に設けられる亜酸化銅膜の微小クラックの形成を防止できる。
したがって、この発明に係るジュメット線は、最外層の亜酸化銅膜に微小クラックがないため、微小クラックによるガラス封着性の悪化を防止できる。
また、線材の伸線加工後、異形ダイスによる引き抜き加工またはロールによる圧延加工により、リード加工を行う前に、伸線加工のロット単位で平面加工が行えるので、リード加工機毎に、平面加工機を設置する必要がなく、設備費及び加工コストの大幅な低減が図れる。 Before forming the cuprous oxide film, a flat portion is formed on the surface of a wire consisting of a mandrel and a copper layer or a copper-containing alloy layer covering the mandrel. The formation of micro cracks in the cuprous oxide film can be prevented.
Therefore, the jumet wire according to the present invention has no micro cracks in the outermost cuprous oxide film, and therefore can prevent deterioration of the glass sealing property due to the micro cracks.
In addition, after wire drawing processing, before lead processing is performed by drawing with a deformed die or rolling with rolls, surface processing can be performed in lot units of wire drawing processing. There is no need to install the equipment, and equipment costs and processing costs can be greatly reduced.

この発明によれば、以上のように、外面に平坦部を有し、しかも最外面の亜酸化銅膜に微小クラックのない高品質のジュメット線を、ローコストで提供することができる。   As described above, according to the present invention, it is possible to provide a high-quality dumet wire having a flat portion on the outer surface and having no microcracks in the outermost cuprous oxide film at a low cost.

この発明に係るガラス封止型半導体装置用ジュメット線は、心金の周囲に銅層又は銅含有合金層を有する線材を、異形ダイスによる引き抜き加工またはロールによる圧延加工により、線材の表面の少なくとも一部に予め平坦部を形成した後、線材の表面を酸化加熱して亜酸化銅膜を形成することにより、製造することができる。   The jumet wire for a glass-sealed semiconductor device according to the present invention is a method in which at least one surface of a wire is obtained by drawing a wire having a copper layer or a copper-containing alloy layer around a mandrel by drawing with a deformed die or rolling with a roll. After forming a flat part in the part beforehand, it can manufacture by oxidizing and heating the surface of a wire, and forming a cuprous oxide film.

上記心金の材質としては、鉄−ニッケルを使用することができる。
この線材の表面に平坦部を形成しておくと、ガラス封止の際に、円弧部の後に、平坦部が封止されるというタイミングのずれが生じ、このずれにより、内部のエアー抜きがスムーズに行われる。
したがって、平坦部の長さ（図８のａ）が短い場合には、平坦部の深さ、即ち、線材の中心線上における外形円ｃから平坦部までの距離（図８のｂ）が浅くなり、エアー抜き効果が少なくなる。 As the material of the mandrel, iron-nickel can be used.
If a flat portion is formed on the surface of the wire, a shift in timing occurs when the flat portion is sealed after the arc portion during glass sealing. To be done.
Therefore, when the length of the flat portion (a in FIG. 8) is short, the depth of the flat portion, that is, the distance from the outer circle c to the flat portion on the center line of the wire (b in FIG. 8) becomes shallow. , Air venting effect is reduced.

この平坦部の数や、長さ、深さの適正値は、線径によって異なるが、線径が小さくなるほど、平坦部の線径対する比率が大きくなる傾向にあり、線径が同じであれば、平坦部の数とその大きさとは基本的に関係がなく、数が増えても、個々の平坦部は一定の大きさが必要である。一方、平坦部の長さが長い（平坦部の深さが深い）場合、加工部の銅が薄くなりすぎて、ガラスとの膨張係数が合わなくなるといった問題が生じる。
線径０．７ｍｍのジュメット線の場合、平坦部の長さは、０．１２〜０．２０ｍｍ、好ましくは、０．１７〜０．１８ｍｍ、平坦部の深さは、０．０５〜０．０９ｍｍ、好ましくは０．０６〜０．０８ｍｍである。
その最適な範囲としては、線径１．０ｍｍ未満の場合、平坦部の幅は線外径の１０〜３０％、線径１．０ｍｍ以上の場合、平坦部の幅は線外径の５〜２５％である。 The appropriate number of flat portions, length, and depth vary depending on the wire diameter, but the smaller the wire diameter, the greater the ratio of the flat portion to the wire diameter. The number of flat portions and their size are basically unrelated, and even when the number increases, each flat portion needs to have a certain size. On the other hand, when the length of the flat portion is long (the depth of the flat portion is deep), the copper in the processed portion becomes too thin, and a problem arises that the expansion coefficient with the glass is not matched.
In the case of a dumet wire having a wire diameter of 0.7 mm, the length of the flat portion is 0.12 to 0.20 mm, preferably 0.17 to 0.18 mm, and the depth of the flat portion is 0.05 to 0.00 mm. It is 09 mm, preferably 0.06 to 0.08 mm.
As the optimum range, when the wire diameter is less than 1.0 mm, the flat portion width is 10 to 30% of the wire outer diameter, and when the wire diameter is 1.0 mm or more, the flat portion width is 5 to 5% of the wire outer diameter. 25%.

次に、外径０．７ｍｍのジュメット線を、亜酸化銅膜を形成する前の状態で、ローラーで引き抜いて、幅０．１８ｍｍ、深さ０．０７ｍｍの平坦部を形成し、その後、加熱処理して２．０μｍの亜酸化銅膜を形成したこの発明に係るジュメット線Ａ（実施例）と、外径０．７ｍｍのジュメット線に加熱処理をして亜酸化銅膜を形成した後、ローラーで引き抜いて幅０．１８ｍｍ、深さ０．０７ｍｍの平坦部を形成した従来のジュメット線Ｂ（比較例）とを作成し、その効果確認試験を行った。
ジュメット線Ａ、Ｂを使用して、ＤＨＤ型ダイオードを製作し、表面の亜酸化銅膜の観察とガラス封着特性の試験を行ったところ、ジュメット線Ａは、亜酸化銅膜に亀裂などの欠陥がなく、ガラス封着特性の点でも異常が認められなかった。
これに対し、ジュメット線Ｂは、平坦部の亜酸化銅膜に微小クラックの発生が認められ、ガラス封着特性の点でも０．０５％の気密不良が発生した。
なお、ガラス封着試験は、ＪＩＳ Ｈ ４５４１、３．８項「空気漏れ」に準じて行った。 Next, a jumet wire having an outer diameter of 0.7 mm is pulled out with a roller in a state before forming the cuprous oxide film to form a flat portion having a width of 0.18 mm and a depth of 0.07 mm, and then heated. After forming a cuprous oxide film by heat-treating the jumet wire A (Example) according to the present invention, which was processed to form a 2.0 μm cuprous oxide film, and a jumet wire having an outer diameter of 0.7 mm, A conventional jumet wire B (comparative example) in which a flat portion having a width of 0.18 mm and a depth of 0.07 mm was formed by drawing with a roller was prepared, and the effect confirmation test was performed.
Using Dumet wires A and B to fabricate DHD type diodes, and observing the cuprous oxide film on the surface and testing the glass sealing properties, it was found that the Dumet wire A had cracks in the cuprous oxide film. There were no defects and no abnormality was observed in terms of glass sealing properties.
On the other hand, with respect to the dumet wire B, generation of micro cracks was observed in the cuprous oxide film in the flat portion, and 0.05% airtight failure occurred in terms of glass sealing characteristics.
The glass sealing test was conducted in accordance with JIS H 4541, section 3.8 “Air Leakage”.

ジュメット線の構造説明図である。It is structure explanatory drawing of a jumet line. ガラス封止型半導体装置の概略図である。It is the schematic of a glass sealing type semiconductor device. 平坦部を有しないジュメット線を使用したガラス封着工程を示す概略図である。It is the schematic which shows the glass sealing process which uses the jumet line which does not have a flat part. 平坦部を有しないジュメット線を使用してガラス封着を行った場合に生じやすい内部欠陥を有するガラス封止型半導体装置の概略図である。It is the schematic of the glass sealing type | mold semiconductor device which has the internal defect which is easy to produce when glass sealing is performed using the dumet wire which does not have a flat part. 外面に平坦部を形成したジュメット線の一例を示す概略図である。It is the schematic which shows an example of the jumet line which formed the flat part in the outer surface. 外面に平坦部を形成したジュメット線の他の例を示す概略図である。It is the schematic which shows the other example of the jumet line which formed the flat part in the outer surface. 平坦部を有するジュメット線を使用したガラス封着工程を示す概略図である。It is the schematic which shows the glass sealing process which uses the dumet wire which has a flat part. 平坦部を有するジュメット線の部分拡大図である。It is the elements on larger scale of the jumet line which has a flat part.

符号の説明Explanation of symbols

１ ジュメット線
２ 心金
３ 銅層又は銅含有合金層
４ 亜酸化銅膜
５ 半導体素子
６ａ、６ｂ リード端子
７ 封止体
８ エアー玉
９ 平坦部
Ａ 空間
Ｂ エアー抜き通路 DESCRIPTION OF SYMBOLS 1 Dumet wire 2 Core metal 3 Copper layer or copper containing alloy layer 4 Cuprous oxide film 5 Semiconductor element 6a, 6b Lead terminal 7 Sealing body 8 Air ball 9 Flat part A Space B Air vent passage

Claims (2)

心金と、この心金の周囲を覆う銅層又は銅含有合金層と、銅層又は銅含有合金層の表面を覆う亜酸化銅膜とからなるガラス封止型半導体装置用ジュメット線において、上記亜酸化銅膜を形成する前の状態で、心金と、この心金の周囲を覆う銅層又は銅含有合金層とからなる線材の表面の少なくとも一部に予め平坦部を形成していることを特徴とするガラス封止型半導体装置用ジュメット線。   In the glass sealed semiconductor device jumet wire comprising a mandrel, a copper layer or a copper-containing alloy layer covering the periphery of the mandrel, and a cuprous oxide film covering the surface of the copper layer or the copper-containing alloy layer, Before the cuprous oxide film is formed, a flat portion is previously formed on at least a part of the surface of the wire composed of the mandrel and the copper layer or the copper-containing alloy layer covering the periphery of the mandrel. A jumet wire for a glass-sealed semiconductor device. 心金の周囲に銅層又は銅含有合金層を有する線材を、異形ダイスによる引き抜き加工またはロールによる圧延加工により、線材の表面の少なくとも一部に予め平坦部を形成した後、線材の表面を酸化加熱して亜酸化銅膜を形成することを特徴とするガラス封止型半導体装置用ジュメット線の製造方法。   A wire rod having a copper layer or a copper-containing alloy layer around the mandrel is formed by drawing a flat die on at least a part of the surface of the wire by drawing with a deformed die or rolling with a roll, and then oxidizes the surface of the wire. A method for producing a jumet wire for a glass-encapsulated semiconductor device, comprising heating to form a cuprous oxide film.
JP2004171594A 2004-06-09 2004-06-09 Dumet wire for glass-sealed semiconductor device Pending JP2005353764A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015035682A1 (en) * 2013-09-14 2015-03-19 Jin Jiashan Boron-free oxide dumet wire and manufacturing process therefor
JPWO2017188015A1 (en) * 2016-04-28 2019-03-07 日本電気硝子株式会社 Metal sealing glass tube and metal sealing glass

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015035682A1 (en) * 2013-09-14 2015-03-19 Jin Jiashan Boron-free oxide dumet wire and manufacturing process therefor
JPWO2017188015A1 (en) * 2016-04-28 2019-03-07 日本電気硝子株式会社 Metal sealing glass tube and metal sealing glass
US11377385B2 (en) 2016-04-28 2022-07-05 Nippon Electric Glass Co., Ltd. Glass tube for metal sealing and glass for metal sealing

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