JP2005347725A - One chip high-tension photoelectric cell continuously arranging many single crystal si particulates - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To save the labor of a photoelectric cell connection and obtain a light receiving electric power of high efficiency-output by integrating a plurality of photoelectric units each having high sensitivity to infrared rays on a glass substrate to output a high voltage. <P>SOLUTION: The thickness of three layers of a 8N type (or 6P type) polycrystalline layer, a 7I type silicon polycrystalline layer and a 6P type (or 8N type) polycrystalline layer is set to the thickness that effectively absorbs infrared rays (λ= about 700 to 1,000 nm) to form the photoelectric cell unit having high sensitivity to the infrared rays. A plurality of the photoelectric cell units are integrated on a sheet of glass substrate to configure a one-tip photoelectric cell. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

Detailed Description of the Invention

Technical field belonging to the invention

  Photovoltaic elements such as solar power, with high sensitivity in the infrared region integrated on a single chip.

  Photovoltaic cells have a minimum generation voltage determined by the materials used. In order to extract a voltage exceeding the minimum unit voltage, a plurality of unit power generation elements must be connected in series. In order to connect a plurality of units, a plurality of unit power generation elements are arranged and connected to each other by electric wires (for example, bonding), but enormous man-hours are spent. In order to reduce the number of man-hours, it is necessary to make a single chip that connects multiple devices. As an example of one-chip implementation, a large number of amorphous silicon thin-film solar cells that are connected and integrated in series to form a single chip are currently used, but the drawback is that the irradiation light is only in the visible light range. It has no sensitivity and cannot generate electricity in the infrared region. At present, when a high voltage photovoltaic cell in the infrared region is required, a plurality of unit power generation elements made of silicon crystal are connected in series to form a high voltage photovoltaic cell. This is because it is difficult to integrate elements in the infrared region.

Problems to be solved by the invention

  In the optical communication field, when it is necessary to transmit large light energy in the invisible infrared wavelength region, a high voltage photovoltaic cell that effectively receives the infrared energy and generates power is required. However, there is no integrated one-chip high-voltage photovoltaic cell that has sensitivity in the infrared region and is easy to incorporate. The problem is to realize a one-chip high-voltage photovoltaic cell having sensitivity in the infrared region.

Means for solving the problem

This case has the following three features in order to solve the conventional difficulties.
1) The material used is silicon fine particle crystal (including polycrystal) having sensitivity to infrared rays.
2) Silicon fine particle crystals are deposited and sintered in layers on a glass substrate so that the elements can be easily connected in series, forming a thick polycrystalline layer, and a thick film with sensitivity in the infrared region. It is possible to form a layer.
3) It is composed of a sintered layer having a PIN structure so that infrared rays can penetrate deep into the polycrystalline silicon thick film layer and be effectively absorbed.

  FIG. 1) shows a cross-sectional view of the element in this case. 1 A glass substrate is used as a base, 2 transparent conductive films to be one electrode are formed on it, and a 5Si fine particle sintered layer to be an infrared sensor is deposited and sintered thereon to form a unit sensor area. ing. Si fine particles are fine particles prepared by decomposing and crystallizing silane (SiH4) gas, and each fine particle is made of a single crystal. If a small amount of phosphine (PH3) is mixed in the silane gas, a deposited layer of N-type Si fine particles can be formed. This is sintered at a specified temperature (fine particles can be sintered at a low temperature) to form an 8N type Si fine particle layer (a single crystal fine particle sintered layer is a polycrystalline layer). Next, a 7I type Sia particle layer is formed only with silane gas, and a diborane (B2H6) 6P type Si fine particle layer is laminated thereon to form a 5Si fine particle sintered layer. Next, a unit photovoltaic cell is completed by forming a 4Al electrode as an electrode on the P-type layer surface. A multi-stage high voltage photovoltaic cell can be achieved by arranging a large number of unit photoelectric grounds on a glass substrate and connecting them in series with an Al electrode pattern. A thick film made of a Si polycrystalline sintered layer having high infrared sensitivity in the photosensitive portion is set to a thickness that effectively absorbs infrared rays. Since the film thickness of the polycrystalline layer has more interface reflection than the Si single crystal and absorbs easily, the film thickness can be much smaller than the thickness of a general Si single crystal substrate. The incident surface of this proton is on the glass substrate side, and 9 incident light passes through the 2 transparent conductive film and enters the 5Si fine particle sintered layer. The polycrystalline layer grown by sintering absorbs incident light and generates electrons and holes. Both are stored in the N layer and the P layer, respectively, to form a battery.

The invention's effect

1) Although there was no one-chip photovoltaic cell that has sensitivity to infrared rays and can extract various voltages that generate large energy, the present invention has made this possible.
2) One-chip high-voltage photovoltaic cells with various working voltages can be used to expand the use of electronic components (eg, CPUs, various LSIs, etc.) and greatly reduce the assembly process.
3) Significantly contributes to the reduction of total cost, such as reduction of installation space due to downsizing and downsizing of peripheral parts (lenses, etc.).

Element cross section Unit photosensitive section enlarged sectional view Equivalent circuit

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Glass substrate 2 Transparent conductive film 3 Oxide film 4 Al conductive film 5 Si fine particle sintered film 6 P type Si fine particle layer 7 I type Si fine particle layer 8 N type Si fine particle layer 9 Incident light 10 Diode

Claims (2)

2 transparent conductive films are coated on 1 glass substrate, 8N type (or 6P type) silicon single crystal fine particles are deposited on this, and then an 8N type (or 6P type) polycrystalline layer that is sintered at an appropriate temperature is formed.
An i-type silicon polycrystalline layer on which 7i-type (intrinsic = intrinsic) silicon single crystal armor particles are deposited and sintered is formed on the polycrystalline layer.
Further, a thick-film-type PIN structure single photovoltaic cell in which 6P type (or 8N type) silicon single crystal fine particles are deposited and sintered on the polycrystalline layer to form a 6P type (or 8N type) silicon polycrystalline layer.   2. A one-chip high-voltage photovoltaic cell according to claim 1, wherein a glass substrate is expanded, a plurality of single photovoltaic cells are integrated and electrically connected in series.

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