JP2005345207A - Semiconductor dynamic quantity sensor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor dynamic quantity sensor of a new constitution capable of accurate sensing and stabilizing output. <P>SOLUTION: An SOI substrate is used for forming capacitor constituent parts E1-E3 in one chip. Movable electrode parts 13 and 23 of a beam structure are displaced in directions which intersect with the surface of a supporting substrate at right angles in the capacitor constituent parts E1 and E2 by the action of acceleration while a carrier wave voltage is being impressed on the movable electrode parts 13 and 23. At the displacements, a capacitance C1 between the movable electrode part 13 and the supporting substrate and a capacitance C2 between the movable electrode part 23 and the supporting substrate change in a different manner, and their capacitance difference is extracted from the supporting substrate via the third capacitor constituent part E3. A shield layer (40) made of a membrane silicon layer 4 is partitioned and formed in the peripheries of a beam structure 10, a beam structure 20, and a counter electrode part 30 for signal extraction. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor dynamic quantity sensor.

Patent Documents 1 and 2 disclose sensors that detect acceleration acting in a direction perpendicular to the surface of the substrate.
FIG. 10 shows a capacitive acceleration sensor using the SOI substrate described in Patent Document 1. On the support substrate 100, a movable electrode portion (weight portion) 102 is connected and supported by beams 101a, 101b, 101c, and 101d. The beams 101a, 101b, 101c, and 101d have a bowl shape, and the movable electrode portion 102 is displaced in the Z-axis direction perpendicular to the surface of the substrate. The acceleration is detected from a change in capacitance between the support substrate 100 and the movable electrode unit 102. In this case, it is easily affected by disturbance (noise).

FIG. 11 shows a differential capacitive sensor described in Patent Document 2. A first static conductive layer (polysilicon layer) 111 is disposed on the silicon substrate 110, a dynamic conductive layer (polysilicon layer) 113 is formed on the first static conductive layer (polysilicon layer) via a gap 112, and further a gap 114 is formed thereon. A second static conductive layer (polysilicon layer) 115 is disposed. The first and second static conductive layers 111 and 115 are fixed, and the dynamic conductive layer 113 is displaced in the direction perpendicular to the surface of the substrate 110 between them. Thus, disturbance (noise) can be canceled by adopting the differential capacitance type.
JP-A-9-113534 JP-A-5-218300

  However, although the sensor of FIG. 11 has a structure resistant to noise, on the silicon substrate 110, the first static conductive layer (polysilicon layer) 111, the dynamic conductive layer (polysilicon layer) 113, and the second static conductive layer (polysilicon). Layer) 115 needs to be stacked and arranged, which complicates the structure.

  The present invention has been made paying attention to the above-described problems, and an object of the present invention is to provide a semiconductor dynamic quantity sensor capable of sensing with a novel configuration with high accuracy and stabilizing the output. There is.

  According to the first aspect of the present invention, in the multilayer substrate in which the thin film semiconductor layer is disposed on the support substrate made of a semiconductor material via the insulating film, the first capacitor component, the second capacitor component, 3 capacitor components are integrated into a single chip. A carrier voltage is applied to the movable electrode portion of the first beam structure in the first capacitor component. A carrier voltage is applied to the movable electrode portion of the second beam structure in the second capacitor component. Then, the movable electrode portion of the first capacitor component and the movable electrode portion of the second capacitor component are displaced in a direction perpendicular to the surface of the support substrate by the action of the mechanical quantity. As a result, the capacitance between the movable electrode portion and the support substrate in the first capacitor component changes, and the capacitance between the movable electrode portion and the support substrate in the second capacitor component changes. At this time, the capacitance between the movable electrode portion and the support substrate in the second capacitor constituent portion changes in a state different from the capacitance due to the displacement of the movable electrode portion of the first capacitor constituent portion. This capacitance difference is taken out to the support substrate, and further taken out from the support substrate to the signal extraction counter electrode portion via the third capacitor component.

  Therefore, by adopting the differential capacitance structure, disturbance (noise) is canceled and sensing can be performed with high accuracy. In addition, by using a laminated substrate in which a thin film semiconductor layer is disposed on a support substrate made of a semiconductor material with an insulating film interposed therebetween, and forming the thin film semiconductor layer on the laminated substrate, the polysilicon layer in FIG. A differential capacitance structure can be obtained with a simpler configuration than when three layers are stacked.

  The shield layer made of a thin film semiconductor layer surrounds the periphery of the first beam structure, the periphery of the second beam structure, and the periphery of the signal extraction counter electrode portion. Electrode part of capacitor component (electrode part constituted by thin film semiconductor layer), electrode part of second capacitor component (electrode part constituted by thin film semiconductor layer), and electrode part of third capacitor component It is possible to prevent mutual interference with the (electrode portion constituted by the thin film semiconductor layer) and to stabilize the output.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
In the present embodiment, a differential capacitance type semiconductor acceleration sensor is embodied. FIG. 1 shows a plan view of a semiconductor acceleration sensor. FIG. 2 shows a longitudinal section taken along line AA in FIG. FIG. 3 shows a longitudinal section taken along line BB in FIG. This sensor is a sensor that detects acceleration applied in a direction perpendicular to the surface of the substrate (a direction perpendicular to the substrate).

  As shown in FIG. 2, an SOI substrate 1 is used as a sensor chip, and a thin film silicon layer (single crystal silicon layer) is formed on a support substrate 2 made of a single crystal silicon substrate via an insulating film 3 made of a silicon oxide film. ) 4 is arranged. In a broad sense, the SOI substrate 1 is a laminated substrate, the support substrate 2 is made of a semiconductor material, and the thin film silicon layer 4 is made of a thin film semiconductor layer. The thin film silicon layer 4 is formed by disposing a single crystal silicon substrate on the support substrate 2 with an insulating film 3 interposed therebetween and then reducing the film thickness. The laminated body of the support substrate 2 and the insulating film 3 has a square plate shape.

  The SOI substrate 1 constitutes a first capacitor component E1, a second capacitor component E2, and a third capacitor component E3 (made in one chip). Further, the frame portion 40 around the capacitor constituent portions E1, E2, and E3 (specifically, beam structures 10 and 20 and electrode portions 30 described later) in the thin film silicon layer 4 is used as a shield layer. Hereinafter, the first, second, and third capacitor components E1, E2, and E3 and the shield layer (40) will be described.

  A through hole 5 is formed in the thin film silicon layer 4, and the thin film silicon layer 4 is partitioned and formed in a predetermined shape by the through hole 5. That is, as shown in FIG. 1, the first and second beam structures 10 and 20 arranged on the left and right sides, the signal extraction counter electrode portion 30 arranged therebetween, and these members (10, 20, A frame portion 40 around 30) is partitioned. Using the support substrate 2 as a common electrode, the first capacitor structure E1 using the first beam structure 10 and the second capacitor structure E2 using the second beam structure 20 are used for signal extraction. The third capacitor component E3 is configured using the counter electrode unit 30.

  The first beam structure 10 includes anchor portions 11a, 11b, 11c, and 11d, beam portions 12a, 12b, 12c, and 12d, and a movable electrode portion (weight portion) 13. The anchor portions 11a, 11b, 11c, and 11d are fixed on the insulating film 3. The beam portions 12a, 12b, 12c, and 12d and the movable electrode portion (weight portion) 13 are disposed on the insulating film 3 with a gap 14 as shown in FIGS. That is, the beam portions 12a, 12b, 12c, and 12d extend from the anchor portions 11a, 11b, 11c, and 11d, and the movable electrode portion (weight portion) 13 is connected and supported at the distal ends of the beam portions 12a, 12b, 12c, and 12d. Yes. In this way, the four beam-shaped beams (12a, 12b, 12c, 12d) are provided, and the movable electrode portion (weight portion) 13 is supported by the beam portions 12a, 12b, 12c, 12d. Part) 13 is disposed opposite to the support substrate 2 with a gap 14 therebetween.

  Further, as shown in FIG. 1, the weight portion 13 is formed with a through hole 15 to reduce the weight. The movable electrode portion (weight portion) 13 is movable in a direction (vertical direction) orthogonal to the surface of the support substrate 2. As shown in FIG. 4, the capacitance (capacitor capacitance) between the movable electrode portion (weight portion) 13 and the support substrate 2 is C1. That is, the movable electrode part (weight part) 13 and the support substrate 2 form a counter electrode, and the capacitance between the two counter electrodes is C1.

  Similarly, the second beam structure 20 in FIG. 1 includes anchor portions 21 a, 21 b, 21 c, 21 d, beam portions 22 a, 22 b, 22 c, 22 d and a movable electrode portion (weight portion) 23. The anchor portions 21a, 21b, 21c, and 21d are fixed on the insulating film 3. The beam portions 22a, 22b, 22c, 22d and the movable electrode portion (weight portion) 23 are arranged on the insulating film 3 with a gap 24 as shown in FIG. That is, the beam portions 22a, 22b, 22c, and 22d extend from the anchor portions 21a, 21b, 21c, and 21d, and the movable electrode portion (weight portion) 23 is connected and supported at the distal ends of the beam portions 22a, 22b, 22c, and 22d. Yes. In this manner, the four beam-shaped beams (22a, 22b, 22c, 22d) are provided, and the movable electrode portion (weight portion) 23 is supported by the beam portions 22a, 22b, 22c, 22d. Part) 23 is arranged to face the support substrate 2 with a gap 24 therebetween.

  Moreover, as shown in FIG. 1, the weight part 23 is formed with a through hole 25 to reduce the weight. The movable electrode portion (weight portion) 23 is movable in a direction (vertical direction) orthogonal to the surface of the support substrate 2. As shown in FIG. 4, the capacitance (capacitor capacitance) between the movable electrode portion (weight portion) 23 and the support substrate 2 is C2. That is, the movable electrode part (weight part) 23 and the support substrate 2 form a counter electrode, and the capacitance between the two counter electrodes is C2.

  Here, the beam portions 12 a to 12 d and 22 a to 22 d displace the movable electrode portions (weight portions) 13 and 23 in the direction when receiving acceleration in a direction (vertical direction) orthogonal to the surface of the support substrate 2. At the same time, it has a spring function of restoring the original state according to the disappearance of the acceleration.

  Further, in the comparison between the length L1 of the beam portion in the first beam structure 10 in FIG. 1 and the length L2 of the beam portion in the second beam structure 20, the length L2 is larger than the length L1. ing. Thus, when acceleration is applied, the electrode portion 23 of the second beam structure 20 is displaced more greatly than the electrode portion 13 of the first beam structure 10. In this way, the first beam structure 10 and the second beam structure 20 are different in capacitance change when acceleration (dynamic quantity) is applied.

  In FIG. 1, an electrode pad (aluminum pad) 16 for wire bonding is formed on the upper surface of an anchor portion 11c made of a thin film silicon layer. Similarly, an electrode pad (aluminum pad) 26 for wire bonding is formed on the upper surface of the anchor portion 21d made of a thin film silicon layer.

  The signal extraction counter electrode portion 30 shown in FIG. 1 includes a rectangular portion 31 and a strip-shaped portion 32, and a strip-shaped portion 32 for pad formation extends from the rectangular portion 31. As shown in FIG. 2, the signal extraction counter electrode portion 30 is partitioned and formed with the insulating film 3 in contact with the lower surface thereof (the signal extraction counter electrode portion 30 is in the state where the insulating film 3 exists below it). Compartments are formed). As shown in FIG. 4, the capacitance (capacitor capacitance) between the signal extraction counter electrode portion 30 and the support substrate 2 is C3. An electrode pad (aluminum pad) 33 for wire bonding is formed on the upper surface of the strip portion 32 made of the thin film silicon layer of FIG. Then, as shown in FIG. 4, the difference (C1-C2) between the capacitance C1 in the first capacitor component E1 and the capacitance C2 in the second capacitor component E2 is the counter electrode portion for signal extraction from the support substrate 2. 30 will be taken out.

  Further, in the thin film silicon layer 4, a frame portion 40 is partitioned and formed around the first beam structure 10, the second beam structure 20, and the signal extraction counter electrode portion 30 in FIG. An electrode pad (aluminum pad) 41 for wire bonding is formed on the upper surface of the frame portion 40 (thin film silicon layer 4). By this pad 41, the thin film silicon layer 4 (frame portion 40) in the peripheral portion of the first beam structure 10, the peripheral portion of the second beam structure 20, and the peripheral portion of the signal extraction counter electrode portion 30 is brought to the ground potential. (Grounded) Thereby, the beam structures 10 and 20 and the signal extraction counter electrode portion 30 are shielded. As shown in FIG. 4, the capacity between the shield layer (40) and the support substrate 2 is C4.

The semiconductor acceleration sensor (sensor chip) is manufactured as follows. The manufacturing process will be described with reference to FIG. FIG. 5 is a cross section taken along line BB in FIG.
First, as shown in FIG. 5A, a wafer-like SOI substrate 1 is prepared. Then, electrode pads 16, 26, 33, and 41 (see FIG. 1) are formed on the thin film silicon layer 4 by using a photolithography technique and an etching technique.

  Subsequently, as shown in FIG. 5B, the mask material 7 is patterned, and anisotropic dry etching is performed by a dry etching apparatus, thereby forming an insulating film (embedded oxide film) 3 on the thin film silicon layer 4. The reaching through hole 5 and the through holes 15 and 25 are formed (patterned). Furthermore, isotropic dry etching is performed from the surface side of the SOI substrate (wafer) 1 where the insulating film (buried oxide film) 3 is exposed with the mask material 7 left, as shown in FIG. As such, the portion of the thin film silicon layer 4 in contact with the insulating film (buried oxide film) 3 is removed. Accordingly, the movable electrode portion (weight portion) 13 of the beam structure 10, the beam portions 12a, 12b, 12c, and 12d, the movable electrode portion (weight portion) 23 of the beam structure 20, and the beam portions 22a, 22b, 22c, and 22d. Becomes movable. Then, by removing the mask material 7 and dicing, the sensor chip shown in FIG. 1 and the like is completed.

  In the semiconductor acceleration sensor configured as described above, when an acceleration including a component in a direction (vertical direction) orthogonal to the surface of the substrate 2 is applied, the movable electrode portions (weight portions) 13 and 23 are It will be displaced in the direction. The amount of displacement corresponding to the acceleration is proportional to the mass of the movable electrode portions (weight portions) 13 and 23 and the restoring force of the beam portions 12a, 12b, 12c, 12d, 22a, 22b, 22c, and 22d. . In this case, with respect to the first capacitance C1 between the movable electrode portion 13 and the support substrate 2 and the second capacitance C2 between the movable electrode portion 23 and the support substrate 2, the potential of the support substrate 2 is floating as shown in FIG. In this state, a change in capacitance (capacity difference) appears on the substrate 2.

  In the present example, the first and second capacitors C1 and C2 are set to be equal to each other when no acceleration is applied. That is, in the beam structures 10 and 20 arranged on the left and right in FIG. 1, C1 = C2.

  FIG. 6 shows a circuit configuration of a capacitance change detection circuit (CV conversion circuit) for detecting the change in capacitance as described above. However, in FIG. 6, the semiconductor acceleration sensor is represented by an equivalent circuit.

  A first carrier wave signal (frequency; for example, 100 kHz, voltage level Vcc is, for example, 5 volts) composed of a rectangular wave as shown in FIG. 7 is applied to the electrode pad 16 in the first beam structure 10. In addition, the electrode pad 26 in the second beam structure 20 has a second carrier signal (frequency; for example, 100 kHz, voltage level Vcc is, for example, 5 volts) made of a rectangular wave that is 180 degrees out of phase with the first carrier signal. Is applied. Although not specifically shown, the first and second carrier signals are formed in synchronization with a clock signal from the same oscillation circuit.

  In this way, in the first capacitor component E1, the movable electrode portion 13 is displaced in the direction perpendicular to the surface of the support substrate 2 by the action of acceleration while the carrier voltage is applied to the movable electrode portion 13, and the movable electrode portion The capacitance C1 between 13 and the support substrate 2 changes. Similarly, in the second capacitor constituting unit E2, the movable electrode unit 23 is displaced in a direction perpendicular to the surface of the support substrate 2 by the action of acceleration while the carrier voltage is applied to the movable electrode unit 23, and the movable electrode unit 23 The capacitance C2 between the support substrate 2 changes. At this time, the capacitance C2 between the movable electrode portion 23 and the support substrate 2 changes in a state different from the capacitance C1 due to the displacement of the movable electrode portion 13 of the first beam structure 10, and the capacitance difference (C1− C2) is removed from the support substrate 2.

  In FIG. 6, a switched capacitor circuit 50 as a CV conversion circuit is connected to the pad 33. The switched capacitor circuit 50 is formed on a chip different from the sensor chip shown in FIG. In the state where each carrier wave signal is applied as described above, the potential level of the electrode pad 33 in the signal extraction counter electrode portion 30 becomes a level corresponding to the difference between the first and second capacitors C1 and C2. The potential level is detected by the switched capacitor circuit 50.

  Specifically, the switched capacitor circuit 50 is connected by combining an operational amplifier 51, a feedback capacitor 52, and a switch element 53 as illustrated. In the operational amplifier 51, a signal from the electrode pad 33 is input to the inverting input terminal and Vcc / 2 (that is, the potential appearing on the electrode pad 33 when the first and second capacitors C1 and C2 are equal to each other). Voltage signal corresponding to the level). The switch element 53 is turned on / off by a trigger signal generated in synchronization with a clock signal from the oscillation circuit (not shown). As shown in FIG. 7, the rising timing of the first carrier signal It is set to turn on only for a certain time (a time shorter than a half cycle of the first carrier signal) at the (falling timing of the second carrier signal).

The capacitance change detection circuit (CV conversion circuit) shown in FIG. 6 operates as follows.
That is, when the first and second capacitors C1 and C2 are equal, at the timing T1 in the timing chart of FIG. 7, Vcc (for example, 5 volts) is applied to the electrode of the first beam structure 10 and the second beam. A voltage of 0 volts is applied to the electrodes in the structure 20. At this time, since the switch element 53 is turned on, the output voltage Vo from the switched capacitor circuit 50 becomes Vcc / 2.

  When the switch element 53 is turned off at a timing T2 at which a predetermined time has elapsed from the timing T1, the applied voltage to each electrode does not change, so the output voltage Vo also remains at Vcc / 2. Next, when the carrier voltage is switched, the applied voltage to each electrode changes.

  Here, the level of the output voltage Vo changes according to the differential change amount of the first and second capacitors C1 and C2, that is, the magnitude of acceleration acting on the electrode portions (weight portions) 13 and 23. Therefore, the magnitude of acceleration can be detected using the output voltage Vo.

In other words, regarding the capacitances C1 and C2 between the movable electrode and the fixed electrode, the fixed capacitance C3 for signal extraction, and the capacitance C4 by the frame (shield layer) 40, the output of the sensor when acceleration is applied is This occurs when the interval between the fixed electrodes changes and a capacitance change (C1-C2) occurs therebetween. Specifically, the sensor output voltage Vo is
Vo = C3. (C1-C2) .Vcc / (C1 + C2 + C3 + C4) / Cf
It becomes. Where Cf is the feedback capacitance of the switched capacitor circuit.

Here, if the C1 and C2 values are sufficiently smaller than the C3 value,
The sensor output voltage Vo is
Vo = (C1-C2) .Vcc / Cf
It becomes.

Therefore, an output proportional to the capacitance difference (C1-C2) that changes with acceleration is obtained.
In this way, the movable electrode portion 13 of the beam structure 10 in the first capacitor component E1 and the movable electrode portion 23 of the beam structure 20 in the second capacitor component E2 move in the same direction and are generated. The capacitance difference (C1-C2) is detected, and the capacitance difference (C1-C2) is taken out via the third capacitor component E3.

  In addition, each capacitor component E1, E2, E3 (beam structures 10, 20, signal extraction counter electrode 30) is completely surrounded by a frame (thin film silicon layer) 40 as a shield layer. , Mutual interference can be prevented. In other words, when a capacitive acceleration sensor using an SOI wafer is displaced in a direction perpendicular to the surface of the substrate and acceleration is detected from a change in capacitance between the support substrate and the movable electrode (the potential of the support substrate is floated to support the movable electrode and the movable electrode). When detecting capacitance change between substrates), the first to third capacitor components E1, E2, and E3 interfere with each other and the output tends to become unstable. It is covered with a frame part (thin film silicon layer) 40, whereby interference between electrodes can be prevented.

Regarding the shield layer, the merit of the present embodiment will be described by comparing FIGS.
In FIG. 8, between the first capacitor component E1 (first beam structure 10) and the third capacitor component E3 (signal extraction counter electrode 30), and the second capacitor component. There is no shield layer between E2 (second beam structure 20) and the third capacitor component E3 (signal extraction counter electrode 30). In this case, as shown in FIG. 9, a parasitic capacitance C10 is formed between the movable electrode portion 13 and the signal extraction counter electrode portion 30, and between the movable electrode portion 23 and the signal extraction counter electrode portion 30. A parasitic capacitance C11 is formed in And since the capacitance value of these parasitic capacitances C10 and C11 changes, it becomes a factor of a sensor output error. On the other hand, in this embodiment, as shown in FIGS. 1 and 4, between the movable electrode portion 13 and the signal extraction counter electrode portion 30, and between the movable electrode portion 23 and the signal extraction counter electrode portion 30. Parasitic capacitance is not formed between them, and the sensor output error can be reduced.

As described above, the present embodiment has the following features.
In the SOI substrate 1, the first capacitor component E1, the second capacitor component E2, and the third capacitor component E3 are integrated into one chip. A carrier voltage is applied to the movable electrode portion 13 of the first beam structure 10 in the first capacitor component E1, and the movable electrode of the second beam structure 20 in the second capacitor component E2. A reverse phase carrier voltage is applied to the unit 23. And the movable electrode part 13 of the 1st capacitor | condenser structure part E1 and the movable electrode part 23 of the 2nd capacitor | condenser structure part E2 are displaced to the direction orthogonal to the surface of the support substrate 2 by the effect | action of an acceleration. As a result, the capacitance C1 between the movable electrode portion 13 and the support substrate 2 in the first capacitor component E1 changes, and between the movable electrode portion 23 and the support substrate 2 in the second capacitor component E2. The capacity C2 changes. At this time, the capacitance C2 between the movable electrode portion 23 and the support substrate 2 in the second capacitor component E2 changes in a state different from the capacitance C1 due to the displacement of the movable electrode portion 13 in the first capacitor component E1. To do. Then, this capacitance difference is taken out from the support substrate 2 and further taken out from the support substrate 2 to the signal extraction counter electrode portion 30 via the third capacitor component E3. Therefore, by adopting the differential capacitance structure, disturbance (noise) is canceled and sensing can be performed with high accuracy. Further, by using the SOI substrate 1 and partitioning and forming the thin film silicon layer 4 on the SOI substrate 1, a differential capacitance structure with a simpler structure than the case where the polysilicon layers in FIG. It can be.

  Further, the frame portion 40 made of the thin film silicon layer 4 was used as a shield layer, and was partitioned around the first beam structure 10, the second beam structure 20, and the signal extraction counter electrode portion 30. Therefore, the shield layer (40) made of the thin film silicon layer 4 surrounds the periphery of the first beam structure 10, the periphery of the second beam structure 20, and the periphery of the signal extraction counter electrode 30. Thus, the electrode part of the first capacitor component E1 (electrode part constituted by a thin film silicon layer), the electrode part of the second capacitor component E2 (electrode part constituted by a thin film silicon layer), Mutual interference with the electrode part (electrode part constituted by a thin film silicon layer) of the third capacitor constituent part E3 can be prevented, and the output can be stabilized.

  In the above embodiment, the first beam structure 10 and the second beam structure 20 have capacitance changes when acceleration (mechanical quantities) is applied by changing the lengths L1 and L2 of the beam portions. However, the following may be used instead.

  The first beam structure 10 and the second beam structure 20 have a capacity when acceleration (mechanical quantity) is applied by changing the width of the beam portions 12a to 12d and the width of the beam portions 22a to 22d. Make changes different.

The first beam structure 10 and the second beam structure 20 differ in capacitance change when acceleration (mechanical quantity) is applied by changing the mass or electrode area of the movable electrode portions 13 and 23.
The first beam structure 10 and the second beam structure 20 are subjected to acceleration (mechanical quantity) by changing the material or thickness of the insulating film 3 between the support substrate 2 and the thin film silicon layer 4. Different capacity changes when.

In addition to the semiconductor acceleration sensor, the present invention may be applied to other mechanical quantities such as a semiconductor yaw rate sensor.
Next, technical ideas that can be grasped from the above embodiment and other embodiments will be described below.

  (A) In the semiconductor dynamic quantity sensor according to claim 1, the first beam structure (10) and the second beam structure (20) are the lengths of the beam portions (12a to 12d, 22a to 22d). A semiconductor dynamic quantity sensor characterized in that a change in capacitance when a dynamic quantity acts is varied by changing the length (L1, L2).

  (B) In the semiconductor dynamic quantity sensor according to claim 1, the first beam structure (10) and the second beam structure (20) are the widths of the beam portions (12a to 12d, 22a to 22d). A semiconductor mechanical quantity sensor characterized in that the change in capacitance when the mechanical quantity is applied is made different by changing.

  (C) The semiconductor dynamic quantity sensor according to claim 1, wherein the first beam structure (10) and the second beam structure (20) are the mass or electrode area of the movable electrode portion (13, 23). A semiconductor mechanical quantity sensor characterized in that the change in capacitance when the mechanical quantity is applied is made different by changing.

  (D) In the semiconductor dynamic quantity sensor according to claim 1, the first beam structure (10) and the second beam structure (20) are formed of the support substrate (2) and the thin film semiconductor layer (4). A semiconductor mechanical quantity sensor characterized in that a change in capacitance when a mechanical quantity is applied is changed by changing a material or a thickness of an insulating film (3).

The top view of the semiconductor acceleration sensor in embodiment. The longitudinal cross-sectional view in the AA line in FIG. The longitudinal cross-sectional view in the BB line in FIG. The conceptual diagram for demonstrating an electrical structure. (A)-(c) is sectional drawing for demonstrating the manufacturing process of a semiconductor acceleration sensor. The circuit block diagram of a capacity | capacitance change detection circuit. Various waveform diagrams. The figure which shows the semiconductor acceleration sensor for a comparison. The equivalent circuit diagram in the semiconductor acceleration sensor for a comparison. The perspective view of the sensor for demonstrating background art. The longitudinal cross-sectional view of the sensor for demonstrating background art.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... SOI substrate, 2 ... Support substrate, 3 ... Insulating film, 4 ... Thin film silicon layer, 10 ... 1st beam structure, 11a, 11b, 11c, 11d ... Anchor part, 12a, 12b, 12c, 12d ... Beam , 13 ... movable electrode part, 14 ... gap, 20 ... second beam structure, 21a, 21b, 21c, 21d ... anchor part, 22a, 22b, 22c, 22d ... beam part, 23 ... movable electrode part, 24 DESCRIPTION OF SYMBOLS ... Air gap, 30 ... Counter electrode part for signal extraction, 40 ... Frame part used as shield layer, 41 ... Pad, E1 ... First capacitor component, E2 ... Second capacitor component, E3 ... Third capacitor configuration Department.

Claims (1)

A laminated substrate (1) in which a thin film semiconductor layer (4) is arranged on a support substrate (2) made of a semiconductor material with an insulating film (3) interposed therebetween, and the first thin film semiconductor layer (4) has a first The beam structure (10) is partitioned and the movable electrode portion (13) of the first beam structure (10) is disposed to face the support substrate (2) via the gap (14), and the movable electrode While the carrier voltage is applied to the part (13), the movable electrode part (13) is displaced in the direction perpendicular to the surface of the support substrate (2) by the action of the mechanical quantity, and the movable electrode part (13) and the support substrate A first capacitor component (E1) whose capacitance between (2) and
A single chip is formed on the multilayer substrate (1) together with the first capacitor component (E1), and a second beam structure (20) is sectioned and formed in the thin film semiconductor layer (4). The movable electrode portion (23) of the body (20) is disposed to face the support substrate (2) via the gap (24), and the movable electrode portion (23) is applied with a carrier voltage applied to the movable electrode portion (23). 23) is displaced in the direction orthogonal to the surface of the support substrate (2) by the action of the mechanical quantity, and the capacitance between the movable electrode portion (23) and the support substrate (2) is the first beam structure. A second capacitor component (E2) that changes in a state different from the capacitance due to the displacement of the movable electrode portion (13) of the body (10), the capacitance difference being taken out from the support substrate (2);
The laminated substrate (1) is formed into one chip together with the first and second capacitor components (E1, E2), and the signal extraction counter electrode portion (30) is disposed below the thin film semiconductor layer (4). A third capacitor component (E3) that is partitioned and formed in the presence of the insulating film (3), and in which the capacitance difference is extracted from the support substrate (2) to the signal extraction counter electrode (30);
The thin-film semiconductor layer (4) is divided and formed around the first beam structure (10), the second beam structure (20), and the signal extraction counter electrode (30). A shield layer (40),
A semiconductor dynamic quantity sensor comprising:

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