JP2005333161A5 - - Google Patents

Download PDF

Info

Publication number
JP2005333161A5
JP2005333161A5 JP2005227657A JP2005227657A JP2005333161A5 JP 2005333161 A5 JP2005333161 A5 JP 2005333161A5 JP 2005227657 A JP2005227657 A JP 2005227657A JP 2005227657 A JP2005227657 A JP 2005227657A JP 2005333161 A5 JP2005333161 A5 JP 2005333161A5
Authority
JP
Japan
Prior art keywords
charged particle
particle beam
inspection apparatus
sample
charging voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005227657A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005333161A (ja
JP5016799B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005227657A priority Critical patent/JP5016799B2/ja
Priority claimed from JP2005227657A external-priority patent/JP5016799B2/ja
Publication of JP2005333161A publication Critical patent/JP2005333161A/ja
Publication of JP2005333161A5 publication Critical patent/JP2005333161A5/ja
Application granted granted Critical
Publication of JP5016799B2 publication Critical patent/JP5016799B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2005227657A 2005-08-05 2005-08-05 荷電粒子ビームを用いた検査装置 Expired - Fee Related JP5016799B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005227657A JP5016799B2 (ja) 2005-08-05 2005-08-05 荷電粒子ビームを用いた検査装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005227657A JP5016799B2 (ja) 2005-08-05 2005-08-05 荷電粒子ビームを用いた検査装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2001295399A Division JP3955450B2 (ja) 2001-09-27 2001-09-27 試料検査方法

Publications (3)

Publication Number Publication Date
JP2005333161A JP2005333161A (ja) 2005-12-02
JP2005333161A5 true JP2005333161A5 (cg-RX-API-DMAC10.html) 2008-11-06
JP5016799B2 JP5016799B2 (ja) 2012-09-05

Family

ID=35487548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005227657A Expired - Fee Related JP5016799B2 (ja) 2005-08-05 2005-08-05 荷電粒子ビームを用いた検査装置

Country Status (1)

Country Link
JP (1) JP5016799B2 (cg-RX-API-DMAC10.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4891036B2 (ja) * 2006-11-16 2012-03-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体検査装置
JP5044813B2 (ja) * 2007-02-19 2012-10-10 エスアイアイ・ナノテクノロジー株式会社 集束イオンビーム装置及び荷電粒子光学系の調整方法
JP2009099540A (ja) * 2007-09-27 2009-05-07 Hitachi High-Technologies Corp 試料の検査，測定方法、及び走査電子顕微鏡
JP5406308B2 (ja) * 2009-11-13 2014-02-05 株式会社日立ハイテクノロジーズ 電子線を用いた試料観察方法及び電子顕微鏡
US12169208B2 (en) 2021-11-30 2024-12-17 Innovatum Instruments Inc. Probe tip X-Y location identification using a charged particle beam
US12306241B2 (en) 2022-02-14 2025-05-20 Innovatum Instruments Inc. Automated probe landing
CN119339775B (zh) * 2024-09-06 2025-11-21 华中科技大学 一种存储器件电学性能缺陷的原位测量方法及系统

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4843330A (en) * 1986-10-30 1989-06-27 International Business Machines Corporation Electron beam contactless testing system with grid bias switching
JPH0786348A (ja) * 1993-09-13 1995-03-31 Fujitsu Ltd 電子ビーム装置
JP2959529B2 (ja) * 1997-06-18 1999-10-06 日本電気株式会社 荷電粒子ビームによる半導体ウエハー検査装置及び検査方法
US6504393B1 (en) * 1997-07-15 2003-01-07 Applied Materials, Inc. Methods and apparatus for testing semiconductor and integrated circuit structures
JP3724949B2 (ja) * 1998-05-15 2005-12-07 株式会社東芝 基板検査装置およびこれを備えた基板検査システム並びに基板検査方法

Similar Documents

Publication Publication Date Title
JP2005164451A5 (cg-RX-API-DMAC10.html)
JP3955450B2 (ja) 試料検査方法
US7019294B2 (en) Inspection method and apparatus using charged particle beam
JP5174750B2 (ja) 荷電粒子線装置及び荷電粒子線画像を安定に取得する方法
US8421008B2 (en) Pattern check device and pattern check method
KR101685274B1 (ko) 하전 입자선 장치
JP2002289128A (ja) 荷電粒子線を用いた基板検査装置および基板検査方法
JP2001313322A5 (cg-RX-API-DMAC10.html)
TW202020921A (zh) 用於裸晶圓檢測之系統及方法
US20070272858A1 (en) Charged particle beam apparatus and pattern measuring method
CN102213683A (zh) X射线透射检查装置及x射线透射检查方法
KR20210027064A (ko) 하전 입자선 장치
JP4828162B2 (ja) 電子顕微鏡応用装置および試料検査方法
TW202107509A (zh) 掃描電子顯微鏡及圖案計測方法
JP2005333161A5 (cg-RX-API-DMAC10.html)
WO2010113232A1 (ja) 検査方法及び検査装置
TWI810618B (zh) 用於檢測樣本之帶電粒子束設備及相關的非暫時性電腦可讀媒體
JP4238072B2 (ja) 荷電粒子線装置
JP5016799B2 (ja) 荷電粒子ビームを用いた検査装置
JP2006024921A5 (cg-RX-API-DMAC10.html)
JP5638098B2 (ja) 検査装置、及び検査条件取得方法
JP2004014207A5 (cg-RX-API-DMAC10.html)
JP5431440B2 (ja) 帯電粒子ビームの角状変位を測定および縮小するための方法
TWI747269B (zh) 帶電粒子束系統、及帶電粒子線裝置中的決定觀察條件之方法
JP2002270655A (ja) 半導体装置の製造方法