JP2005333079A - Semiconductor device packaging structure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device packaging structure which can efficiently dissipate heat generated from a plurality of semiconductor devices. <P>SOLUTION: The semiconductor device packaging structure (1) comprises electrical insulating substrates (11a-11c), semiconductor devices (12-14) disposed on a surface (111c) of the electrical insulating substrate (11c) and between the electrical insulating substrates (11a-11c), heat dissipating parts (15a-15d) provided on the surfaces (111a, 111c) of the electrical insulating substrates (11a, 11c), and heat conducting paths (16a-16d) for connecting the heat dissipating parts (15a-15d) and the semiconductor devices (12-14). <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor element mounting structure such as a semiconductor package or a multilayer wiring board on which semiconductor elements are mounted, and more particularly to a semiconductor element mounting structure on which a plurality of semiconductor elements are mounted.

  Mobile electronic devices typified by mobile phones, notebook computers, digital cameras, and the like are rapidly becoming smaller, thinner and lighter. Further, there are significant demands for higher performance and multi-functionality, and miniaturization of semiconductor elements and circuit parts and high-density mounting technology for these electronic parts are making rapid progress in order to meet such demands. Further, in the recent semiconductor element field, with the progress of microfabrication technology, the semiconductor element mounting structure has been highly integrated and scaled up, so that the power consumption of the semiconductor element mounting structure has increased and is generated. Heat dissipation treatment for a large amount of heat has become an important issue.

  Conventionally, as a heat dissipation means for a semiconductor element mounting structure, a means for dissipating heat generated by the semiconductor element by attaching a heat dissipation fin formed of a highly thermally conductive metal to the surface of the semiconductor element mounting structure is known.

  FIG. 8 shows a cross-sectional view of a conventional semiconductor element mounting structure provided with the above-described heat radiation means. As shown in FIG. 8, the semiconductor element mounting structure 100 includes a base material 101, a semiconductor element 102 disposed in the opening 101 a of the base material 101, and a heat conductive adhesive 103 on the upper surface of the base material 101 in the drawing. And a heat sink 104 made of aluminum or the like provided through the. As a result, heat generated from the semiconductor element 102 is conducted to the heat sink 104 and is dissipated into the air from the radiation fins 104 a provided on the heat sink 104. Further, in the semiconductor element mounting structure 100, an electrode (not shown) provided on the circuit formation surface 102a of the semiconductor element 102 is wire-bonded to the internal wiring 106a formed on the base material 101 by the gold wire 105, and the via The conductor 107 is connected to the external wiring 106 b formed on the base material 101. Further, bumps 108 are formed on the external wiring 106b.

  However, the semiconductor device mounting structure provided with the heat dissipation means using such a heat sink has to have a large mounting space, which makes it difficult to apply to Multi Chip Package (MCP) and System In Package (SIP). ing. In order to solve such a problem, a semiconductor element mounting structure having a heat dissipation structure that can be mounted on a small electronic device without using a heat sink has been recently proposed (see Patent Document 1 and Patent Document 2). ).

  All of the heat dissipation means described in the above-mentioned patent documents are such that a semiconductor element is mounted on a substrate with the circuit formation surface facing upward, and a metal material filled in a heat dissipation through hole formed in the substrate is a circuit formation surface of the semiconductor element. The heat generated from the semiconductor element is dissipated out of the substrate.

Further, Patent Document 3 proposes a semiconductor element mounting structure having a heat dissipation structure different from the above proposal. This heat radiation means is provided with a ground electrode on a circuit forming surface of a semiconductor bare chip mounted face down on a substrate, and from the ground electrode to a heat radiation projecting electrode formed on the substrate via an insulating resin. The generated heat is transferred to dissipate heat.
JP-A-9-199823 Japanese Patent Laid-Open No. 10-313071 JP-A-10-65072

  However, each of the above conventional techniques is a heat dissipation structure for a single semiconductor element mounted on a package or wiring board, and a plurality of semiconductor elements mounted on the surface or inside of an MCP, a multilayer wiring board, etc. Is still not enough to dissipate the large amount of heat generated from the heat. For this reason, it has been difficult for conventional techniques to prevent deterioration of element characteristics due to heat generated between semiconductor elements.

  The present invention solves the above problems and provides a semiconductor element mounting structure capable of efficiently dissipating heat generated from a plurality of semiconductor elements.

  A semiconductor element mounting structure according to the present invention includes a semiconductor element including a plurality of layers of an electrically insulating substrate, and a plurality of semiconductor elements disposed on at least one of the surface of the electrically insulating substrate and the electrically insulating substrate. A mounting structure, wherein each of the semiconductor elements has portions that do not face each other in the thickness direction of the electrically insulating substrate, and is at least one of the electrically insulating substrates disposed in the outermost layer. And a heat conducting path provided in the electrically insulating base material and connecting the heat radiating part and the semiconductor element.

  According to the semiconductor element mounting structure of the present invention, each of the semiconductor elements has portions that do not face each other in the thickness direction of the electrically insulating substrate, and further, among the electrically insulating substrates disposed in the outermost layer Since it has a heat radiating portion provided on at least one surface and a heat conduction path connecting the heat radiating portion and the semiconductor element, deterioration of element characteristics due to heat generated between the semiconductor elements can be prevented. The heat generated from the plurality of semiconductor elements can be efficiently radiated from the heat radiating portion.

  The semiconductor element mounting structure of the present invention includes a plurality of layers of electrically insulating base materials and a plurality of semiconductor elements disposed on at least one of the surface of the electrically insulating base material and the electrically insulating base material. Although the electrical insulation base material which can be used for the semiconductor element mounting structure of the present invention is not particularly limited, a mixed material of a thermosetting resin and an inorganic filler can be suitably used. The thickness of the electrically insulating substrate is preferably 10 to 600 μm. The semiconductor element can be mounted by a known method, for example, by a flip chip bonding method. The semiconductor element mounting structure of the present invention can be produced by using a method disclosed in, for example, Japanese Patent Application Laid-Open No. 2002-261449.

  And in addition to the said structure, the semiconductor element mounting structure of this invention is a heat-radiation part provided in the surface of at least any one among the electrically insulating base materials arrange | positioned in the outermost layer, The said electrically insulating base material inside And a heat conducting path connecting the heat radiating portion and the semiconductor element. Thereby, the heat generated from the plurality of semiconductor elements can be efficiently radiated from the heat radiating portion. The heat dissipating part that can be used for the semiconductor element mounting structure of the present invention is formed by patterning a metal foil such as a copper foil provided on the surface of the electrically insulating base material by hot pressing or the like by a known photolithography method. be able to. In addition, the heat conduction path has a through hole formed by a laser or the like at a desired position of the electrically insulating substrate, for example, and a heat conductive paste containing a metal powder and a heat conductive resin (for example, an epoxy resin) in the through hole. After being filled, it can be formed by heating and pressurizing with a hot press or the like. Further, instead of the heat conductive paste, for example, the inside of the through hole may be subjected to metal plating to form a heat conduction path.

  Moreover, the semiconductor element mounting structure of the present invention has a portion where the semiconductor elements do not face each other in the thickness direction of the electrically insulating substrate. Thereby, deterioration of element characteristics due to heat generated between the semiconductor elements can be prevented. In the semiconductor element mounting structure of the present invention, it is preferable that a groove for forming an air layer is provided at a position located at least in a part between the plurality of semiconductor elements in the electrically insulating substrate. . Also with this configuration, it is possible to prevent deterioration of element characteristics due to heat generated between semiconductor elements. The groove can be formed by a processing means such as a laser. In order to more effectively prevent deterioration of device characteristics, the width of the groove is preferably 10 μm or more. Furthermore, in the said structure, it is preferable that the said groove | channel has divided | segmented the structural material of the electrically insulating base material located between several semiconductor elements. Thereby, deterioration of element characteristics due to heat generated between the semiconductor elements can be effectively prevented.

  In addition, the semiconductor element mounting structure of the present invention further includes a heat radiating material layer connected to the heat conducting path between the electrically insulating base materials, and the heat radiating material layer is preferably divided for each semiconductor element to be connected. . Thereby, heat generated from the semiconductor elements can be radiated more efficiently, and deterioration of element characteristics due to heat generated between the semiconductor elements can be prevented. Moreover, in the said structure, it is preferable that a heat radiating material layer is at least any one of a ground layer and a power supply layer. Thereby, the heat generated from the semiconductor element can be radiated more efficiently using the ground layer or the power supply layer having a large area. The ground layer and the power supply layer can be formed by a method similar to the method for forming the heat dissipation portion described above.

  In the semiconductor element mounting structure of the present invention, the semiconductor element and the heat conducting path are preferably connected via at least one of a heat collecting pad, a heat conducting bump, and a heat collecting land. Thereby, the heat generated from the semiconductor element can be radiated more efficiently. The heat collection pad is, for example, a pad on a semiconductor element provided for heat dissipation in a place where an electrical signal does not pass, and the heat conduction bump is, for example, a protruding electrode formed on the heat collection pad, and the heat collection pad The land is, for example, a land on the substrate on which the heat conduction bump is mounted. Further, in the above configuration, when the semiconductor element and the heat conducting path are connected via at least one of the heat collecting pad and the heat collecting land, the connection surface of the heat collecting pad or the heat collecting land has an uneven shape. Preferably it is formed. Thereby, since the area of a connection surface can be increased, the heat generated from the semiconductor element can be radiated more efficiently.

  Moreover, in the semiconductor element mounting structure of the present invention, it is preferable that the semiconductor elements are connected to the heat radiating portion through a plurality of heat conduction paths. Thereby, the heat generated from the semiconductor element can be radiated more efficiently. Further, the semiconductor element mounting structure of the present invention is a semiconductor element in which the semiconductor element is radiated by one or more heat conducting paths through one or more heat collecting pads, a plurality of heat conducting bumps, and one or more heat collecting lands. It is preferable that it is connected to. Thereby, the heat generated from the semiconductor element can be dissipated more efficiently.

  Further, in the semiconductor element mounting structure of the present invention, if the heat generation amount per unit time of each semiconductor element is different, the heat resistance of the heat conduction path connected to the semiconductor element increases as the heat generation amount of the semiconductor element increases. It is preferable to be configured to be small. Thereby, the heat generated from the semiconductor element can be radiated more efficiently. The heat resistance of the heat conduction path is preferably 10 ° C./W or less.

  Further, in the semiconductor element mounting structure of the present invention, when the calorific value per unit time of each semiconductor element is different, as the calorific value of the semiconductor element increases, the width of the heat conduction path connected to the semiconductor element increases. It is preferable that the cross-sectional area is large. Thereby, the heat generated from the semiconductor element can be radiated more efficiently.

  The semiconductor element mounting structure of the present invention is preferably a multilayer wiring board on which a semiconductor element is mounted. As a result, even when other electronic components, such as capacitors, are mounted with high density, it is possible to suppress deterioration in performance of the electronic components due to heat generated from the semiconductor element. Hereinafter, embodiments of the present invention will be described in detail.

[First Embodiment]
First, a first embodiment of the present invention will be described with reference to the drawings as appropriate. FIG. 1 to be referred to is a cross-sectional view of the semiconductor element mounting structure according to the first embodiment of the present invention.

  As shown in FIG. 1, the semiconductor element mounting structure 1 according to the first embodiment includes an electrical insulating base material 11a, 11b, 11c, a semiconductor element 12 disposed between the electrical insulating base materials 11a, 11b, and an electrical The semiconductor element 13 disposed between the insulating base materials 11b and 11c, the semiconductor element 14 disposed on the surface 111c of the electrical insulating base material 11c, and the heat radiation portions 15a and 15b provided on the surface 111a of the electrical insulating base material 11a. , 15c, a heat radiating portion 15d provided on the surface 111c of the electrical insulating base material 11c, and a heat conduction path provided in the electrical insulating base materials 11a to 11c and connecting the heat radiating portions 15a to 15c and the semiconductor elements 12 to 14 16a, 16b, and 16c, and a heat conducting path 16d that connects the heat radiating portion 15d and the semiconductor element 12 are provided. Thereby, the heat which generate | occur | produces from the semiconductor elements 12-14 can be efficiently radiated from the thermal radiation parts 15a-15d. Further, in the present embodiment, even when the semiconductor element 12 generates a larger amount of heat per unit time than the semiconductor elements 13 and 14, the two heat conduction paths 16 a and 16 d connected to the upper and lower surfaces of the semiconductor element 12 are used. The generated heat can be efficiently dissipated. Further, as shown in FIG. 1, the heat conduction path 16 d may have a cross-sectional area in the width direction larger than that of the heat conduction paths 16 a to 16 c in accordance with the heat generation amount of the semiconductor element 12.

  As shown in FIG. 1, the semiconductor elements 13 and 14 have portions 13 a and 14 a that do not face each other in the thickness direction of the electrical insulating base material 11 c, respectively. It does not face 14. As a result, the heat generated in the semiconductor elements 12 to 14 is preferentially passed through the heat conducting paths 16a to 16d to be dissipated. For example, the heat generated in the semiconductor element 13 propagates to the semiconductor element 14 and It is possible to prevent deterioration of element characteristics due to temperature rise. In addition, it is preferable that the heat-conduction paths 16a-16d are connected to the part with the highest surface temperature of the semiconductor elements 12-14.

[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to the drawings as appropriate. FIG. 2 to be referred to is a partial cross-sectional enlarged view of a semiconductor element mounting structure according to the second embodiment of the present invention. In FIG. 2, the same components as those of the semiconductor element mounting structure 1 according to the first embodiment described above are denoted by the same reference numerals, and the description thereof is omitted.

  As shown in FIG. 2, in the semiconductor element mounting structure 20, the semiconductor element 12 is connected to the heat conducting path 16 a through the heat collecting pads 21, the heat conducting bumps 22, and the heat collecting lands 23. Further, the semiconductor element 12 and the electrically insulating base material 11 a are connected via a plurality of electrodes 24, pads 25 and lands 26. Others are formed in the same manner as the semiconductor element mounting structure 1 (see FIG. 1). With this configuration, heat generated from the semiconductor element 12 can be efficiently radiated. In the present embodiment, an example in which only the connection portion between the semiconductor element 12 and the heat conducting path 16a is connected via the heat collecting pad 21, the heat conducting bump 22, and the heat collecting land 23 has been described. The connection location between the semiconductor element and the heat conduction path may be similarly connected.

[Third Embodiment]
Next, a third embodiment of the present invention will be described with reference to the drawings as appropriate. FIG. 3 to be referred to is an enlarged partial cross-sectional view of the semiconductor element mounting structure according to the third embodiment of the present invention. In FIG. 3, the same components as those of the semiconductor element mounting structure 20 according to the second embodiment described above are denoted by the same reference numerals, and the description thereof is omitted.

  As shown in FIG. 3, in the semiconductor element mounting structure 30, the semiconductor element 12 is connected to the two heat conducting paths 16 a via the heat collecting pads 21, the two heat conducting bumps 22 and the heat collecting lands 23. Others are formed in the same manner as the semiconductor element mounting structure 20 (see FIG. 2). With this configuration, the heat generated from the semiconductor element 12 can be radiated more efficiently. In order to effectively dissipate the heat generated from the semiconductor element 12, a plurality of heat conduction paths 16d connecting the semiconductor element 12 and the heat radiating portion 15d may be provided.

[Fourth Embodiment]
Next, a fourth embodiment of the present invention will be described with reference to the drawings as appropriate. FIG. 4 to be referred to is a cross-sectional view of the semiconductor element mounting structure according to the fourth embodiment of the present invention. In FIG. 4, the same components as those of the semiconductor element mounting structure 1 according to the first embodiment described above are denoted by the same reference numerals, and the description thereof is omitted.

  As shown in FIG. 4, the semiconductor element mounting structure 40 is provided with a groove 42 for forming an air layer 41 at a position located between the semiconductor elements 12 and 13 in the electrically insulating base materials 11 b and 11 c. ing. Other configurations are the same as those of the semiconductor element mounting structure 1 (see FIG. 1). In the cross-sectional view shown in FIG. 4, the groove 42 includes a line segment connecting the corner 12 b of the semiconductor element 12 and the corner 13 b of the semiconductor element 13, the corner 12 c of the semiconductor element 12, and the corner 13 c of the semiconductor element 13. The constituent materials of the electrically insulating base materials 11b and 11c located between the line segments connecting the two are separated. In FIG. 5, which is a schematic top view showing the positional relationship between the semiconductor elements 12, 13 and the groove 42, the groove 42 is a line segment connecting the corner portion 12 d of the semiconductor element 12 and the corner portion 13 d of the semiconductor element 13. The constituent materials of the electrical insulating base materials 11b and 11c located between the line segment connecting the corner portion 12e of the semiconductor element 12 and the corner portion 13e of the semiconductor element 13 are divided. As a result, heat conduction between the semiconductor element 12 and the semiconductor element 13 is blocked by the air layer 41 in the groove 42, and deterioration of element characteristics due to heat generated between the semiconductor elements 12 and 13 can be effectively prevented. it can.

[Fifth Embodiment]
Next, a fifth embodiment of the present invention will be described with reference to the drawings. FIG. 6 to be referred to is a cross-sectional view of the semiconductor element mounting structure according to the fifth embodiment of the present invention. In FIG. 6, the same components as those of the semiconductor element mounting structure 1 according to the first embodiment described above are denoted by the same reference numerals, and the description thereof is omitted.

  As shown in FIG. 6, the semiconductor element mounting structure 60 includes five layers of electrically insulating base materials 51a to 51e, a ground layer 52 is provided between the electrically insulating base materials 51b and 51c, and further, the electrically insulating base material. Power supply layers 53a and 53b are provided between 51a and 51b. The ground layer 52 is connected to the heat transfer path 16b, and the power supply layers 53a and 53b are connected to the heat transfer paths 16a and 16c, respectively. The ground layer 52 and the power supply layers 53a and 53b are divided for each of the semiconductor elements 12 to 14 to be connected. In addition, the ground layer 52 and the power supply layers 53a and 53b have portions that do not face each other in the thickness direction of the electrically insulating base material, like the semiconductor elements 12 to 14. Other configurations are the same as those of the semiconductor element mounting structure 1 (see FIG. 1). Thereby, the heat conduction between the semiconductor elements 12 to 14 is blocked, and the deterioration of the element characteristics due to the heat generated between the semiconductor elements 12 to 14 can be prevented.

[Sixth Embodiment]
Next, a sixth embodiment of the present invention will be described with reference to the drawings as appropriate. FIG. 7 to be referred to is a cross-sectional view of a multilayer wiring board (semiconductor element mounting structure) on which a semiconductor element according to the sixth embodiment of the present invention is mounted. In FIG. 7, the same components as those of the semiconductor element mounting structure 1 according to the first embodiment described above are denoted by the same reference numerals, and the description thereof is omitted.

  As shown in FIG. 7, in addition to the configuration of the semiconductor element mounting structure 1 (see FIG. 1), the multilayer wiring board 70 is formed between the surfaces 111a and 111c of the electrical insulating base materials 11a and 11c and the electrical insulating base materials 11a to 11c. Circuit wiring 71 formed between the electrical insulating bases 11a and 11b and between the electrical insulating bases 11b and 11c, and electronic components 72a and 72b such as capacitors. In the present embodiment, the heat generated from the semiconductor elements 12 to 14 is efficiently radiated from the heat radiating portions 15a to 15d, so that the performance deterioration of the electronic components 72a and 72b due to the heat generated from the semiconductor elements 12 to 14 is suppressed. be able to. In the present embodiment, it is also possible to use each heat conducting path and heat radiating portion together as a signal transmission path and an electrode, respectively.

  As described above, in the semiconductor element mounting structure according to the present invention, the semiconductor elements each have a portion that does not face each other in the thickness direction of the electric insulating base material, and further, the electric insulating property disposed in the outermost layer. Since it has a heat dissipating part provided on at least one surface of the base material and a heat conducting path connecting the heat dissipating part and the semiconductor element, deterioration of element characteristics due to heat generated between the semiconductor elements is prevented. In addition, heat generated from a plurality of semiconductor elements can be efficiently radiated from the heat radiating portion. In addition, according to the semiconductor element mounting structure of the present invention, heat generated in one semiconductor element is preferentially guided to the heat radiating portion. For example, heat generated in one semiconductor element propagates to another semiconductor element. By doing so, it is possible to avoid a problem that a desired power cannot be applied to the another semiconductor element or a thermal runaway of the another semiconductor element occurs. In the first to sixth embodiments, it goes without saying that the heat conducting path, the heat collecting pad, the heat conducting bump, and the heat collecting land can also be used as a via conductor and an electrode terminal for electric signal transmission. .

  As described above, the semiconductor element mounting structure according to the present invention can efficiently dissipate heat generated from a plurality of semiconductor elements. Therefore, the semiconductor element mounting structure such as an MCP or a multilayer wiring board can be easily downsized. Can be achieved. Therefore, it can be suitably used for electronic devices that are required to be small and thin, such as mobile phones.

It is sectional drawing of the semiconductor element mounting structure which concerns on 1st Embodiment of this invention. It is a partial cross-section enlarged view of the semiconductor element mounting structure according to the second embodiment of the present invention. It is a partial cross-section enlarged view of a semiconductor element mounting structure according to a third embodiment of the present invention. It is sectional drawing of the semiconductor element mounting structure which concerns on 4th Embodiment of this invention. In the semiconductor element mounting structure concerning a 4th embodiment of the present invention, it is a schematic top view showing the positional relationship of a semiconductor element and a slot. It is sectional drawing of the semiconductor element mounting structure which concerns on 5th Embodiment of this invention. It is sectional drawing of the multilayer wiring board (semiconductor element mounting structure) with which the semiconductor element which concerns on 6th Embodiment of this invention was mounted. It is sectional drawing of the semiconductor element mounting structure provided with the conventional thermal radiation means.

Explanation of symbols

1, 20, 30, 40, 50, 60 Semiconductor element mounting structure 11a, 11b, 11c, 51a, 51b, 51c, 51d, 51e Electrical insulating base 12, 13, 14 Semiconductor element 15a, 15b, 15c, 15d Part 16a, 16b, 16c, 16d Heat conduction path 21 Heat collection pad 22 Heat conduction bump 23 Heat collection land 41 Air layer 42 Groove 52 Ground layer 53a, 53b Power supply layer 70 Multilayer wiring board (semiconductor element mounting structure)

Claims (13)

A semiconductor element mounting structure comprising a plurality of layers of an electrically insulating substrate, and a plurality of semiconductor elements disposed on at least one of the electrically insulating substrate surface and the electrically insulating substrate,
Each of the semiconductor elements has portions that do not face each other in the thickness direction of the electrically insulating substrate,
A heat dissipating part provided on the surface of at least one of the electrically insulating substrates disposed in the outermost layer;
A semiconductor element mounting structure, further comprising a heat conduction path provided in the electrically insulating base material and connecting the heat radiating portion and the semiconductor element.   2. The semiconductor element mounting structure according to claim 1, wherein a groove for forming an air layer is provided at a position located in at least a part between the plurality of semiconductor elements in the electrically insulating substrate.   The semiconductor element mounting structure according to claim 2, wherein the groove divides a constituent material of the electrically insulating base located between the plurality of semiconductor elements. The semiconductor element mounting structure further includes a heat dissipation material layer connected to the heat conducting path between the electrically insulating bases,
The semiconductor element mounting structure according to claim 1, wherein the heat dissipation material layer is divided for each of the semiconductor elements to be connected.   The semiconductor element mounting structure according to claim 4, wherein the heat dissipation material layer is at least one of a ground layer and a power supply layer.   The semiconductor element according to claim 1, wherein the semiconductor element and the heat conducting path are connected via at least one of a heat collecting pad, a heat conducting bump, and a heat collecting land. Mounting structure. The semiconductor element and the heat conducting path are connected via at least one of a heat collecting pad and a heat collecting land,
The semiconductor element mounting structure according to claim 6, wherein at least one connection surface of the heat collecting pad and the heat collecting land is formed in an uneven shape.   2. The semiconductor element mounting according to claim 1, wherein the semiconductor element is connected to the heat radiating portion by the heat conducting path via one or more heat collecting pads, a plurality of heat conducting bumps, and one or more heat collecting lands. Structure.   The semiconductor element mounting structure according to claim 1, wherein each of the semiconductor elements is connected to the heat radiating portion by a plurality of the heat conducting paths. The semiconductor elements have different calorific values per unit time,
The semiconductor element mounting structure according to any one of claims 1 to 9, wherein a heat resistance of the heat conducting path connected to the semiconductor element is reduced as a calorific value of the semiconductor element is increased. body. The semiconductor elements have different calorific values per unit time,
11. The semiconductor according to claim 1, wherein a cross-sectional area in a width direction of the heat conducting path connected to the semiconductor element is increased as a heat generation amount of the semiconductor element is increased. Element mounting structure.   The semiconductor element mounting structure according to any one of claims 1 to 11, wherein the heat conduction path is formed by at least one of a heat conductive paste containing metal powder and a heat conductive resin and a metal. The semiconductor element mounting structure according to any one of claims 1 to 12, wherein the semiconductor element mounting structure is a multilayer wiring board on which the semiconductor element is mounted.

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