JP2005333073A - Semiconductor device - Google Patents
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- JP2005333073A JP2005333073A JP2004152199A JP2004152199A JP2005333073A JP 2005333073 A JP2005333073 A JP 2005333073A JP 2004152199 A JP2004152199 A JP 2004152199A JP 2004152199 A JP2004152199 A JP 2004152199A JP 2005333073 A JP2005333073 A JP 2005333073A
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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Abstract
Description
この発明は、半導体装置に係り、半導体モジュールとして用いられる半導体装置に関する。 The present invention relates to a semiconductor device, and more particularly to a semiconductor device used as a semiconductor module.
半導体パワーモジュールにおいては、例えば、基板上に放熱板を介して半導体チップが搭載され、この半導体チップの表面に形成されている電極パッドと基板上に配設された外部電極とがワイヤボンディングにより接続される。あるいは、放熱基板上にケースが形成されると共にケース内の放熱基板上に半導体チップが搭載され、半導体チップの電極パッドとケースに一体に形成されたインサート電極とがワイヤボンディングにより接続される。 In a semiconductor power module, for example, a semiconductor chip is mounted on a substrate via a heat sink, and electrode pads formed on the surface of the semiconductor chip and external electrodes disposed on the substrate are connected by wire bonding. Is done. Alternatively, a case is formed on the heat dissipation substrate, a semiconductor chip is mounted on the heat dissipation substrate in the case, and an electrode pad of the semiconductor chip and an insert electrode formed integrally with the case are connected by wire bonding.
このような構造を有する半導体パワーモジュールでは、半導体チップの電極パッドと外部電極あるいはインサート電極との間に高低差が生じ、外部から振動等を受けたり、ワイヤボンディング設備の異常でワイヤのループ高さが低くなったりして、ワイヤの中間部が放熱板の角部あるいはインサート電極の縁部に接触し、短絡したり、ワイヤが摩擦により断線するおそれがある。 In the semiconductor power module having such a structure, there is a difference in height between the electrode pad of the semiconductor chip and the external electrode or the insert electrode, and the wire loop height is affected by external vibration or abnormal wire bonding equipment. , The intermediate portion of the wire may come into contact with the corner of the heat sink or the edge of the insert electrode, causing a short circuit, or the wire may be broken due to friction.
特許文献1には、半導体チップの周辺部に絶縁物を形成して半導体チップの電極パッドからリードへ引き出すワイヤが半導体チップの縁部に接触して短絡したり、隣接するワイヤが互いに短絡することを防止する半導体装置が開示されている。 In Patent Document 1, an insulator is formed in the periphery of a semiconductor chip, and a wire drawn from the electrode pad of the semiconductor chip to the lead contacts the edge of the semiconductor chip and is short-circuited, or adjacent wires are short-circuited to each other. A semiconductor device for preventing the above is disclosed.
しかしながら、特許文献1の半導体装置は、ワイヤと半導体チップの縁部や隣接するワイヤとの接触を防止する目的で半導体チップの周辺部に絶縁物を形成するものであり、これでは上述したような半導体パワーモジュールにおけるワイヤと放熱板の角部あるいはインサート電極の縁部との接触を防止することは困難である。また、特許文献1の半導体装置は、半導体チップやリードを保持するために、半導体チップ、リードの基端部及びワイヤが樹脂パッケージ等で封止された状態で使用され、上述した半導体パワーモジュールのようにワイヤが振動等によって移動するものではない。
この発明はこのような問題点を解消するためになされたもので、ワイヤの断線及び短絡を防止することができる半導体装置を提供することを目的とする。
However, the semiconductor device of Patent Document 1 forms an insulator on the periphery of the semiconductor chip for the purpose of preventing contact between the wire and the edge of the semiconductor chip or the adjacent wire. It is difficult to prevent contact between the wire and the corner of the heat sink or the edge of the insert electrode in the semiconductor power module. In addition, the semiconductor device of Patent Document 1 is used in a state in which the semiconductor chip, the base end portion of the lead, and the wire are sealed with a resin package or the like in order to hold the semiconductor chip or the lead. Thus, the wire is not moved by vibration or the like.
The present invention has been made to solve such a problem, and an object of the present invention is to provide a semiconductor device capable of preventing disconnection and short circuit of wires.
この発明に係る半導体装置は、半導体チップの電極パッドと半導体チップの近傍に配置された外部電極とが互いに高低差を有すると共にこれら両者間がワイヤにより接続される半導体装置において、半導体チップの電極パッドと外部電極のワイヤボンディング部との間の領域で且つワイヤの下方に位置する中間部材の表面上にゴム状の絶縁部材が突出形成されたものである。
半導体チップの電極パッドと外部電極のワイヤボンディング部との間の領域で且つワイヤの下方に位置する中間部材の表面上にゴム状の絶縁部材が形成されているため、外部からの振動等によりワイヤが移動しても、ワイヤは絶縁部材に接触することによりワイヤと中間部材との直接の接触が防止され、これによりワイヤの断線及び短絡が防止される。
According to another aspect of the present invention, there is provided a semiconductor device in which an electrode pad of a semiconductor chip and an external electrode arranged in the vicinity of the semiconductor chip have a difference in height and are connected to each other by a wire. A rubber-like insulating member protrudes from the surface of the intermediate member located between the wire and the wire bonding portion of the external electrode and below the wire.
A rubber-like insulating member is formed on the surface of the intermediate member located between the electrode pad of the semiconductor chip and the wire bonding portion of the external electrode and below the wire. Even if the wire moves, the wire comes into contact with the insulating member to prevent direct contact between the wire and the intermediate member, thereby preventing the wire from being disconnected or short-circuited.
基板とこの基板上に配置される放熱板をさらに備え、半導体チップは放熱板上に配置されると共に外部電極は基板上に配置され、中間部材は放熱板の角部から形成することができる。またこの場合、絶縁部材は、放熱板の面取りされた角部に配置されることが好ましい。
また、放熱基板とこの放熱基板上に配置されるケースをさらに備え、半導体チップはケース内の放熱基板上に配置されると共に外部電極はケースに一体に形成されたインサート電極からなり、中間部材はインサート電極の縁部から形成することができる。
さらに、絶縁部材は、熱硬化型、常温硬化型または紫外線硬化型の樹脂から形成することができる。
The semiconductor device may further include a substrate and a heat sink disposed on the substrate, the semiconductor chip may be disposed on the heat sink and the external electrode may be disposed on the substrate, and the intermediate member may be formed from a corner of the heat sink. In this case, it is preferable that the insulating member is disposed at a chamfered corner of the heat sink.
In addition, a heat dissipating substrate and a case disposed on the heat dissipating substrate are further provided, the semiconductor chip is disposed on the heat dissipating substrate in the case and the external electrode is formed of an insert electrode formed integrally with the case, and the intermediate member is It can be formed from the edge of the insert electrode.
Furthermore, the insulating member can be formed from a thermosetting resin, a room temperature curable resin, or an ultraviolet curable resin.
この発明によれば、半導体チップの電極パッドと外部電極のワイヤボンディング部との間の領域で且つワイヤの下方に位置する中間部材の表面上にゴム状の絶縁部材が突出形成されているため、ワイヤは絶縁部材に接触することによりこのワイヤと中間部材との直接の接触が防止され、これによりワイヤの断線及び短絡が防止される。 According to the present invention, the rubber-like insulating member protrudes on the surface of the intermediate member located between the electrode pad of the semiconductor chip and the wire bonding portion of the external electrode and below the wire. When the wire comes into contact with the insulating member, direct contact between the wire and the intermediate member is prevented, thereby preventing disconnection and short circuit of the wire.
以下、この発明の実施の形態を添付図面に基づいて説明する。
実施の形態1.
図1に、この発明の実施の形態1に係る半導体装置の全体構成を示す。この半導体装置は、半導体パワーモジュールとして用いられるものである。基板1上に銅板等からなる放熱板2を介して半導体チップ3が搭載されている。また、基板1上には外部電極4が配設されており、半導体チップ3の表面に形成された電極パッド(図示せず)と外部電極4とがワイヤ5により接続されている。また、半導体チップ3の電極パッドと外部電極4のワイヤボンディング部との間の領域において、ワイヤ5の下方に位置する放熱板2の角部6上には、この角部6に沿って延出するゴム状の絶縁部材7が形成されている。
図2に示されるように、絶縁部材7は放熱板2の角部6表面から上方に向けて凸状に突出するように形成されており、この絶縁部材7は弾性及び絶縁性を有している。
Embodiments of the present invention will be described below with reference to the accompanying drawings.
Embodiment 1 FIG.
FIG. 1 shows an overall configuration of a semiconductor device according to Embodiment 1 of the present invention. This semiconductor device is used as a semiconductor power module. A
As shown in FIG. 2, the
次に、この実施の形態1の半導体装置の作用を説明する。この半導体装置では、半導体チップ3の電極パッドが外部電極4よりも高い位置にあり、外部からの振動等によりワイヤ5が移動しても、ワイヤ5の下方に位置する放熱板2の角部6上にゴム状の絶縁部材7が突出形成されているため、ワイヤ5は絶縁部材7に接触することにより、このワイヤ5の放熱板2の角部6との直接の接触が防止される。ここで、絶縁部材7は弾性を有しているため、ワイヤ5が絶縁部材7と摩擦して擦り切れることもなく、これによりワイヤ5の断線を防止することができる。
Next, the operation of the semiconductor device of the first embodiment will be described. In this semiconductor device, even if the electrode pad of the
また、このようにワイヤ5が絶縁部材7に接触してワイヤ5の放熱板2の角部6との接触が防止されるため、ワイヤ5と放熱板2との短絡を防止することができる。
また、ワイヤ5の放熱板2の角部6との接触を防止するために、ワイヤ5のループ高さを大きくとる必要がなく、これにより小型の半導体装置を実現することができる。
Further, since the wire 5 comes into contact with the
Further, it is not necessary to increase the loop height of the wire 5 in order to prevent the wire 5 from contacting the
なお、上述の実施の形態1において、図2に示されるように、絶縁部材7を放熱板2の角部6の表面上に配置する代わりに、図3に示されるように、放熱板2の角部6の先端を絶縁部材7により覆うように配置することもでき、このようにしてもワイヤ5が絶縁部材7に接触してワイヤ5の短絡及び断線を防止することができ、実施の形態1と同様の効果が得られる。
また、図4に示されるように、放熱板4の角部6を面取りし、この面取りされた角部8上に絶縁部材7を配置することができ、このようにしても実施の形態1と同様の効果を得ることができる。また、このようにすれば、ワイヤ5が放熱板2の角部8に対してさらに接触しにくくなり、ワイヤ5の短絡及び断線をより確実に防止することができる。
In the first embodiment described above, instead of disposing the
Further, as shown in FIG. 4, the
実施の形態2.
次に図5を参照して、この発明の実施の形態2に係る半導体装置を説明する。この実施の形態2の半導体装置は、図1に示した実施の形態1の半導体装置において、半導体チップ3を放熱板2を介して基板1上に搭載する代わりに、優れた放熱性を有する放熱基板11の上に半導体チップ3を搭載したものである。すなわち、放熱基板11上の周縁部にケース12が配設されると共に、ケース12内の放熱基板11上に半導体チップ3が配置されている。また、この半導体装置は、外部電極としてケース12に一体に形成されたインサート電極13を有しており、半導体チップ3表面の電極パッドとこのインサート電極13とがワイヤ14により互いに接続されている。
Next, a semiconductor device according to the second embodiment of the present invention will be described with reference to FIG. The semiconductor device of the second embodiment is a heat dissipation having excellent heat dissipation instead of mounting the
また、インサート電極13のワイヤボンディング部と半導体チップ3の電極パッドとの間の領域において、ワイヤ14の下方に位置するインサート電極13の縁部15上には、図6に示されるように、この縁部15に沿って延出すると共にインサート電極13の縁部15表面から凸状に突出するようにゴム状の絶縁部材16が配置されている。
Further, in the region between the wire bonding portion of the
このように、インサート電極13が半導体チップ3の電極パッドより高い位置にあっても、ワイヤ14が絶縁部材16に接触することにより、このワイヤ14とインサート電極13の縁部15との直接の接触が防止されるため、実施の形態1と同様に、ワイヤ14の短絡及び断線を防止することができる。
Thus, even when the
なお、上述の実施の形態1及び2における絶縁部材7及び16は、熱硬化型の樹脂、常温硬化型の樹脂、或いは紫外線硬化型の樹脂から形成することができ、特に、放熱板2及びインサート電極13に塗布して高く盛ることができるように、硬化前には所定の粘性を有するものが好ましい。例えば、シリコーン樹脂からなる接着剤やポッティング材を用いることができる。
The insulating
1 基板、2 放熱板、3 半導体チップ、4 外部電極、5、14 ワイヤ、6 放熱板の角部、7,16 絶縁部材、8 放熱板の面取りされた角部、11 放熱基板、12 ケース、13 インサート電極、15 インサート電極の縁部。 DESCRIPTION OF SYMBOLS 1 Board | substrate, 2 Heat sink, 3 Semiconductor chip, 4 External electrode, 5, 14 wire, 6 Corner | angular part of a heat sink, 7,16 Insulation member, 8 Chamfered corner | angular part of a heat sink, 11 Heat sink, 12 Case, 13 Insert electrode, 15 Edge of insert electrode.
Claims (5)
半導体チップの電極パッドと外部電極のワイヤボンディング部との間の領域で且つワイヤの下方に位置する中間部材の表面上にゴム状の絶縁部材が突出形成されていることを特徴とする半導体装置。 In a semiconductor device in which an electrode pad of a semiconductor chip and an external electrode arranged in the vicinity of the semiconductor chip have a height difference with each other and the two are connected by a wire,
A semiconductor device characterized in that a rubber-like insulating member protrudes on the surface of an intermediate member located between the electrode pad of the semiconductor chip and the wire bonding portion of the external electrode and below the wire.
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