JP2005327469A - Semiconductor memory device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which needs little electric power to work. <P>SOLUTION: In a DRAM, upper addresses are allocated to ways W0 and W1 and lower addresses are allocated to word lines WL belonging to the way W0 and way W1 respectively . The start of self-refresh is detected by a self-refresh start trigger generation circuit 1 and a change of the upper addresses is detected by a refresh address change detection circuit 2. Way selection signals RX0 and RX1 are not reset and are held at the activation level while the certain ways W0 and W1 are selected based on the result of the detection. Accordingly, the electric power consumption is reduced as compared to heretofore when the signals RX0 and RX1 are reset every time one word line WL is selected. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor memory device, and more particularly to a semiconductor memory device having a self-refresh mode.

  FIG. 16 is a block diagram showing a configuration of a conventional dynamic random access memory (hereinafter referred to as DRAM) having a self-refresh mode.

  Referring to FIG. 16, this DRAM includes control signal input terminals 30 to 32, 34, an address signal input terminal group 33, a data signal input / output terminal group 35, a ground terminal 36, and a power supply terminal 37. The DRAM also includes a clock generation circuit 38, a row and column address buffer 39, an address switching circuit 40, an address generation circuit 41, a row decoder 42, a column decoder 43, a memory mat 44, an input buffer 47, and an output buffer 48. Memory mat 44 includes a memory array 45 and a sense refresh amplifier + input / output control circuit 46.

  The clock generation circuit 38 selects a predetermined operation mode based on signals ext / RAS and ext / CAS given from the outside via the control signal input terminals 30 and 31, and controls the entire DRAM. Row and column address buffer 39 selects address signals A0 to Aq (q is a natural number) externally applied through address signal input terminal group 33 for row decoder 42 and column decoder 43 during read and write operations. Give it.

  The address generating circuit 41 includes an oscillator 49 and an address counter 50 as shown in FIG. The oscillator 49 is activated by the self-refresh instruction signal SREFE output from the clock generation circuit 38, and outputs the internal clock signal int / RAS. The address counter 50 includes a plurality of flip-flops FF0 to FFq connected in series, and counts the number of pulses of the internal clock signal int / RAS output from the oscillator 49. Outputs of the flip-flops FF0 to FFq are self-refresh address signals C0 to Cq, respectively. Address switching circuit 40 is controlled by self-refresh instruction signal SREFE, and couples row and column address buffer 39 and row decoder 42 during read and write operations, and address generation circuit 41 and row decoder 42 during self-refresh operation. And combine.

  The memory array 45 has a recording capacity of 64 Mbits, for example. One bit of data is stored in one memory cell. Each memory cell is arranged at a predetermined address determined by a row address and a column address.

  Row decoder 42 designates a row address of memory array 45 in response to an address signal applied from row and column address buffer 39 or address generation circuit 41. Column decoder 43 designates a column address of memory array 45 in response to an address signal applied from row and column address buffer 39.

  Sense refresh amplifier + input / output control circuit 46 connects a memory cell at an address designated by row decoder 42 and column decoder 43 to one end of global signal input / output line pair GIO during read and write operations. The sense refresh amplifier + input / output control circuit 46 refreshes the data in the memory cell at the row address designated by the row decoder 42 during the self-refresh operation.

  The other end of global signal input / output line pair GIO is connected to input buffer 47 and output buffer 48. In response to a signal ext / W externally applied through control signal input terminal 32, input buffer 47 receives data input from data signal input / output terminal group 35 in a global signal input / output line pair during a write operation. This is applied to the selected memory cell via GIO. Output buffer 48 outputs read data from the selected memory cell to data signal input / output terminal group 35 in response to signal ext / OE input from control signal input terminal 34 during the read operation.

  FIG. 18 shows a layout of row decoder 42 and memory mat 44 of the DRAM shown in FIG. Referring to FIG. 18, this DRAM employs a so-called alternate shared sense amplifier system. That is, the memory array 45 is divided into a plurality of memory array blocks BK1 to BKm (m is a natural number), and the sense refresh amplifier + input / output control circuit 46 is divided into a plurality of sense amplifier bands SA0 to SAm. Each of memory array blocks BK1 to BKm is arranged between SA0 to SAm.

  In sense amplifier band SA0, a plurality of sense refresh amplifiers 51 are provided corresponding to, for example, even columns of adjacent memory array block BK1. In sense amplifier band SA1, a plurality of sense refresh amplifiers 51 are provided corresponding to, for example, odd columns of adjacent memory array blocks BK1 and BK2. The sense refresh amplifier 51 of the sense amplifier band SA1 is shared by the memory array blocks BK1 and BK2. Which side of the memory array blocks BK1 and BK2 is used for the sense refresh amplifier 51 of the sense amplifier band SA1 is determined by signals BLIL1 and BLIR1 input from the row decoder 42. The same applies to the other sense amplifier bands SA2 to SAm.

  The row decoder 42 includes a plurality of word driver groups WD1 to WDm. Word driver groups WD1 to WDm are provided corresponding to memory array blocks BK1 to BKm, respectively. The word driver group WD1 selects any row of the memory array block BK1 in response to the signal group X and the signals RX0-1 and RX1-1. The signal group X is a signal group generated in the row decoder 42 based on the address signals A1 to A7 given from the outside or the address signals C1 to C7 given from the address generation circuit 41. The signals RX0-1 and RX1-1 are signals generated in the row decoder 42 based on the address signals A0, A8 to Aq or the address signals C0 and C8 to Cq. The same applies to the other word driver groups WD2 to WDm.

  FIG. 19 is a partially omitted circuit block diagram showing the configuration of memory array block BK1 shown in FIG. 18 and its periphery. Referring to FIG. 19, memory array block BK1 includes a plurality of memory cells MC arranged in a matrix, word lines WL provided corresponding to each row, and bit lines provided corresponding to each column. To BLP. Memory cell MC includes an access MOS transistor Q and an information storage capacitor C. The word line WL transmits the output of the word driver group WD1, and activates the memory cells MC in the selected row. Bit line pair BLP includes bit lines BL and / BL through which complementary signals are transmitted, and inputs / outputs data signals to / from selected memory cell MC.

  The odd-numbered bit line pair BLP of the memory array block BK1 is connected to the sense refresh amplifier 51 via the transfer gate 61, and further connected to the odd-numbered bit line pair BLP of the memory array block BK2 via the transfer gate 64. The Transfer gate 61 includes N channel MOS transistors 62 and 63 connected between bit lines BL and / BL and input / output nodes N1 and N2 of sense refresh amplifier 51, respectively. The gates of N channel MOS transistors 62 and 63 both receive signal BLIL1. Transfer gate 64 includes N channel MOS transistors 65 and 66 connected between bit lines BL and / BL and input / output nodes N1 and N2 of sense refresh amplifier 51, respectively. The gates of N channel MOS transistors 65 and 66 both receive signal BLIR1. The transfer gates 61 and 64 connect the selected memory array block (for example, BK1) of the memory array blocks BK1 and BK2 to the sense refresh amplifier 51, and sense refresh with the other memory array block (in this case, BK2). The amplifier 51 is shut off.

  Sense refresh amplifier 51 includes N-channel MOS transistors 52 and 53 connected between input / output nodes N1 and N2 and node N3, respectively, and a P-channel MOS connected between input / output nodes N1 and N2 and node N4, respectively. Transistors 55 and 56. The gates of MOS transistors 52 and 55 are both connected to input / output node N2, and the gates of MOS transistors 53 and 56 are both connected to input / output node N1. Sense refresh amplifier 51 includes an N channel MOS transistor 54 connected between node N3 and the node of ground potential GND, and a P channel MOS transistor 57 connected between node N4 and a node of power supply potential Vcc. Including. The gates of MOS transistors 54 and 57 receive sense amplifier activation signals SANE and SAPE, respectively. The sense refresh amplifier 51 amplifies a minute potential difference that appears between the bit lines BL and / BL after the memory cell MC is selected.

  A bit line equalize circuit 70 is provided between transfer gates 61 and 64 for equalizing bit lines BL and / BL to bit line potential Vcc / 2 before memory cell MC is selected. Bit line equalize circuit 70 includes N channel MOS transistors 71 and 72 connected between input / output nodes N1 and N2 and node N5 of sense amplifier 51, and an N channel connected between input and output nodes N1 and N2, respectively. MOS transistor 73. MOS transistors 71-73 receive bit line equalize signal BLEQ at their gates. Bit line potential Vcc / 2 is applied to node N5.

  In addition, this DRAM employs a 2-way system. The plurality of word lines WL in the memory array block BK1 are divided into two ways W0 and W1. The way W0 includes odd-numbered word lines WL, and the way W1 includes even-numbered word lines WL. Signals RX0-1 and RX1-1 are respectively assigned to the ways W0 and W1 of the memory array block BK1, and a signal group X is assigned to each word line WL belonging to each way W0 and W1. Each word line WL of the memory array block BK1 is specified by signals RX0-1 and RX1-1 and a signal group X.

  In order to configure this two-way system, the word driver group WD1 includes a word driver (AND gate) 80 provided corresponding to each odd row of the memory array block BK1, and a word provided corresponding to each even row. A driver (AND gate) 81 and a word driver (AND gate) 82 provided corresponding to each adjacent word driver 80 and 81 are included. Word driver 82 receives signal group X. Word driver 80 receives the output of word driver 82 and signal RX0-1. The word driver 81 receives the output of the word driver 82 and the signal RX1-1. The outputs of the word drivers 80 and 81 are given to the corresponding word lines WL, respectively. For example, when all the signal groups X are at the activation level “H” level and the signals RX0-1 for selecting the way W0 are at the activation level “H” level, the first word line WL1 is selected. The The same applies to the other memory array blocks BK2 to BKm.

  Next, the operation of the DRAM shown in FIGS. 16 to 19 will be briefly described. In the write operation, the column decoder 43 selects the bit line pair BLP of the column corresponding to the address signal, and the selected bit line pair BLP uses the sense refresh amplifier + input / output control circuit 46 and the global signal input / output line GIO. To the input buffer 47. Input buffer 47 supplies write data from data signal input / output terminal group 35 to selected bit line pair BLP via global signal input / output line pair GIO in response to signal ext / W. Write data is given as a potential difference between bit lines BL and / BL. Next, the row decoder 42 raises the word line WL of the row corresponding to the address signal to the “H” level which is the activation level, and turns on the MOS transistor Q of the memory cell MC of the row. An amount of electric charge corresponding to the potential of the bit line BL or / BL is stored in the capacitor C of the selected memory cell MC.

  Since the charge in the capacitor C of the memory cell MC gradually flows out, the data is refreshed. FIG. 20 is a time chart showing the self-refresh operation. When the clock generation circuit 38 detects that the signal ext / RAS falls after the signal ext / CAS falls and the state is maintained for 100 μs or longer, the clock generation circuit 38 outputs the self-refresh instruction signal SREFE.

  In response to the output of self-refresh instruction signal SREFE from clock generation circuit 38, address switching circuit 40 couples address generation circuit 41 and row decoder 42. The oscillator 49 of the address generation circuit 41 starts oscillating and outputs the internal clock signal int / RAS. The address counter 50 counts the number of pulses of the internal clock signal int / RAS and outputs address signals C0 to Cq.

  Assuming that address signals C0-Cq specify a certain word line WL in memory array block BK1, for example, in FIG. 19, signals BLIR1, BLEQ are set to "" according to the fall of internal clock signal int / RAS. The "H" level falls to the "L" level, and the MOS transistors 65 and 66 of the transfer gate 64 and the MOS transistors 71 to 73 of the bit line equalize circuit 70 become non-conductive. Row decoder 42 raises word line WL in a row corresponding to address signals C0-Cq to "H" level. The potentials of the bit lines BL and / BL change by a minute amount according to the charge amount of the capacitor C of the activated memory cell MC.

  Next, sense amplifier activation signal SANE is raised to “H” level, sense amplifier activation signal SAPE is lowered to “L” level, and sense refresh amplifier 51 is activated. When the potential of the bit line BL is slightly higher than the potential of the bit line / BL, the resistance values of the MOS transistors 53 and 55 are lower than the resistance values of the MOS transistors 52 and 56, and the potential of the bit line BL is “ The potential of the bit line / BL is pulled down to the “L” level. Conversely, when the potential of the bit line / BL is slightly higher than the potential of the bit line BL, the resistance values of the MOS transistors 52 and 56 become smaller than the resistance values of the MOS transistors 53 and 55, and the bit line / BL Is pulled up to the “H” level, and the potential of the bit line BL is pulled down to the “L” level.

  When signal int / RAS rises to "H" level, word line WL is lowered to "L" level, which is an inactive level, and signals BLIR1, BLEQ, SANE, SAPE are reset, and word line WL is reset. The data refresh for is finished.

  Such a cycle is performed for each word line WL of the memory array block BK1, and then for each word line WL of the memory array block BK2. When signals ext / RAS, ext / CAS attain “H” level and output of self-refresh signal SREFE is stopped, self-refresh mode is terminated.

  In the read operation, the data in the memory cell MC in the row selected by the row decoder 42 is read out to the bit line pair BLP in the same manner as in the refresh operation, and the data in the bit line pair BLP in the column selected by the column decoder 43 is read. Is applied to the output buffer 48 via the global signal input / output line pair GIO. Output buffer 48 outputs read data to data signal input / output terminal group 35 in response to signal ext / OE.

  However, the conventional DRAM has the following problems. That is, if the number of word lines WL in each memory array block BK1 to BKm is n (n is a natural number), for example, the signal BLIR1 is k times (k ≦ n) while the memory array block BK1 is selected. The signals BLIL1 and BLIR2 were amplified n times while the memory array block BK2 was selected. The signals RX0-1 and RX1-1 are amplified k / 2 times while the memory array block BK1 is selected. The signals RX0-2 and RX1-2 are n while the memory array block BK2 is selected. / The amplitude was twice.

  The “H” level of these signals BLI and RX is set to a boosted potential Vpp higher than the power supply potential Vcc in order to make the bit lines BL and / BL fully swing. In order to generate the boosted potential Vpp, a booster pump circuit is used. Since the pumping efficiency of the booster pump circuit is as low as about 30 to 40%, the signals BLI and RX are amplified in order to keep the boosted potential Vpp stable. Electric power that is several times larger than the electric power required to make it necessary.

  Therefore, a main object of the present invention is to provide a semiconductor memory device with low power consumption.

  A semiconductor memory device according to the present invention is a semiconductor memory device having a self-refresh mode, and includes a memory array, an address specifying unit, a first signal generating unit, a second signal generating unit, a word line driving unit, and refresh execution. Means. The memory array includes a plurality of memory cells arranged in a plurality of rows and a plurality of columns, a plurality of word lines provided in correspondence with a plurality of rows, respectively, and a plurality of word lines previously divided into a plurality of groups, and a plurality of memory cells. In the self-refresh mode, a first address is assigned to each group, and a second address is assigned to each word line belonging to each group. The address designation means sequentially designates each second address belonging to a certain first address in the memory array in response to the setting of the self-refresh mode, and then designates each second address belonging to the other first address. Specify 2 addresses in sequence. The first signal generation means is provided corresponding to each first address, and outputs an activation level signal in response to the start of designation of the corresponding first address by the address designation means, and the self signal generation means When the refresh mode is set, an activation level signal is output while each second address belonging to the first address is sequentially designated, and the designation of the corresponding first address is completed. When the self-refresh mode is not set, the deactivation level signal is output every time the designation of each address is completed. The second signal generation means is provided corresponding to each second address, and outputs an activation level signal in response to the start of designation of the corresponding second address by the address designation means, A deactivation level signal is output in response to the end of designation. The word line driving means is provided corresponding to each word line, and activates the corresponding word line in response to the activation level signal being output from both the corresponding first and second signal generating means. Level. The refresh execution means refreshes the data in the memory cell corresponding to the word line activated by the word line driving means.

  In the semiconductor memory device according to the present invention, a plurality of word lines are divided into a plurality of groups, a first address is assigned to each group, and a second address is assigned to each word line belonging to each group. First signal generating means is provided corresponding to each first address, and second signal generating means is provided corresponding to each second address. The first and second signal generating means output an activation level signal to activate the word line driving means during a period in which the address designation means designates the corresponding address. Therefore, the power consumption can be reduced as compared with the prior art in which the output levels of the first and second signal generating means are amplituded once each time the second address designated by the address designating means is changed. .

  Another semiconductor memory device according to the present invention is a semiconductor memory device having a self-refresh mode, and includes a memory array, a refresh execution unit, an address specifying unit, a first signal generating unit, a second signal generating unit, A connection unit and a word line driving unit are provided. Each of the memory arrays includes a plurality of memory cells arranged in a plurality of rows and a plurality of columns, a plurality of word lines provided in correspondence with the plurality of rows, and a plurality of bits provided in correspondence with the plurality of columns, respectively. In the self refresh mode, each block is assigned a first address, and each word line belonging to each block is assigned a second address. The refresh execution means is provided between each of the plurality of blocks of the memory array, and refreshes the data of the memory cells corresponding to the word lines set to the activation level of the adjacent blocks. The address designation means sequentially designates each second address belonging to a certain first address in the memory array in response to the setting of the self-refresh mode, and then designates each second address belonging to the other first address. Specify 2 addresses in sequence. The first signal generation means is provided corresponding to each first address, and outputs an activation level signal in response to the start of designation of the corresponding first address by the address designation means, and the self signal generation means When the refresh mode is set, an activation level signal is output while each second address belonging to the first address is sequentially designated, and the designation of the corresponding first address is completed. When the self-refresh mode is not set, the deactivation level signal is output every time the designation of each address is completed. The second signal generation means is provided corresponding to each second address, and outputs an activation level signal in response to the start of designation of the corresponding second address by the address designation means, A deactivation level signal is output in response to the end of designation. The connecting means is provided corresponding to each block, and connects the corresponding block and the corresponding refresh execution means in response to the activation level signal being output from the corresponding first signal generating means. The refresh execution means is separated from other blocks. The word line driving means is provided corresponding to each word line, and activates the corresponding word line in response to the activation level signal being output from both the corresponding first and second signal generating means. Level.

  In another semiconductor memory device according to the present invention, the memory array is divided into a plurality of blocks, a refresh execution unit is provided between each of the plurality of blocks, and a connection unit is provided corresponding to each block. The connection unit connects the corresponding block and the corresponding refresh execution unit during a period in which the corresponding block is specified by the address specifying unit. Therefore, power consumption can be reduced compared to the conventional case where the connection means is reset each time the word line designated by the address designation means is changed.

  As described above, in this semiconductor memory device, the first and second signal generating means output the activation level signal during the period when the address generating means designates the corresponding address. Therefore, the power consumption can be reduced as compared with the prior art in which the output levels of the first and second signal generating means are amplituded once each time the second address designated by the address designating means is changed. .

[Embodiment 1]
FIG. 1 is a circuit block diagram showing a configuration of a main part of a DRAM according to the first embodiment of the present invention, and FIG. 2 is a circuit block diagram showing a configuration of an address generation circuit 41.

  Referring to FIGS. 1 and 2, this DRAM is different from the conventional DRAM in that self-refresh start trigger generation circuit 1, refresh address change detection circuit 2, AND gates 3, 10, flip-flop 4 are included in row decoder 42. In addition, the latch circuits 8 and 9 are newly provided, the address signal C0 is output from the flip-flop FF7 of the address generation circuit 41, and the address signals C1 to C7 are respectively output from the flip-flops FF0 to FF6 of the address generation circuit 41. This is the output point.

  Self-refresh start trigger generation circuit 1 normally outputs an “H” level, and outputs an “L” level pulse in response to the output of self-refresh instruction signal SREFE from clock generation circuit 38. The refresh address change detection circuit 2 normally outputs an “H” level, and outputs an “L” level pulse in response to a change in the address signal C 0, that is, the output of the flip-flop FF 7 of the address generation circuit 41. AND gate 3 outputs a logical product signal / RATD of the output signal of self-refresh start trigger generation circuit 1 and the output signal of refresh address change detection circuit 2.

  The flip-flop 4 includes two NAND gates 5 and 6 and an inverter 7. The flip-flop 4 is set by the signal / RATD and is reset by the internal clock signal int / RAS output from the oscillator 49 of the address generation circuit 41. The output of the flip-flop 4 becomes the signal / HOLD.

  As shown in FIG. 3, the latch circuit 8 includes a transfer gate 11 and inverters 12 to 14. Transfer gate 11 is connected between input node 8a and intermediate node 8c, inverter 12 is connected between intermediate node 8c and output node 8b, and inverter 13 is connected between output node 8b and intermediate node 8c. The signal / HOLD is directly input to the gate 11a on the N channel MOS transistor side of the transfer gate 11 and is input to the gate 11b on the P channel MOS transistor side of the transfer gate 11 through the inverter 14. Therefore, inverters 12 and 13 latch the input level when signal / HOLD falls from "H" level to "L" level. The same applies to the latch circuit 9. The latch circuit 8 receives the signal RXM, and the latch circuit 9 receives the signal φBL0-1.

  The AND gate 10 outputs the output signal Pre. RX, Pre. Receive BS0-1. The output of the AND gate 10 becomes a signal RX0-1. Latch circuit 9 and AND gate 10 are provided corresponding to each of signals RX0-1, RX1-1 to RX0-m, RX1-m.

  FIG. 4 is a time chart showing the operation of the DRAM shown in FIGS. When the self-refresh instruction signal SREFE is output from the clock generation circuit 38, the internal clock signal int / RAS is output from the oscillator 49 of the address generation circuit 41, and the count operation of the address counter 50 is started.

  In response to the output of the self-refresh instruction signal SREFE, the “L” level pulse signal P1 is output from the self-refresh start trigger generation circuit 1 and output to the address signal C0, that is, the flip-flop FF7 of the address generation circuit 41. In response to the change of the "L" level pulse signals P2, P3, ... are output from the refresh address change detection circuit 2. Pulse signals P1, P2, P3,... Pass through AND gate 3 and become signal / RATD.

  The flip-flop 4 is set by the fall of the signal / RATD to the “L” level, and is reset by the fall of the internal clock signal int / RAS to the “L” level. The output of the flip-flop 4 becomes the signal / HOLD.

  Signals φBL0-1 and φBL1-1 are signals generated in row decoder 42 based on outputs C0 and C8 to Cq of flip-flops FF7 to FFq of address generation circuit 41 and internal clock signal int / RAS. . Signals φBL0-1 are signals indicating that one way W0 of memory array block BK1 has been selected, and are inverted signals of internal clock signal int / RAS during the period in which way W0 of block BK1 is selected. The signal φBL1-1 is a signal indicating that the other way W1 of the memory array block BK1 is selected, and becomes an inverted signal of the internal clock signal int / RAS during the period when the way W1 of the block BK1 is selected.

  Signals φBL0-1 are latched in latch circuit 9 when signal / HOLD falls from "H" level to "L" level, and latched when signal / HOLD rises from "L" level to "H" level. The latch of the circuit 9 is released. The output of the latch circuit 9 is the signal Pre. BS0-1. Similarly, the signal φBL1-1 is the signal Pre. BS1-1. As a result, portions of the signals φBL0-1 and φBL1-1 that have the same amplitude as the internal clock signal int / RAS are smoothed to the “H” level.

  The signal RXM is a signal that swings at substantially the same timing as the internal clock signal int / RAS, and is output from the clock generation circuit 38. Signal RXM is latched in latch circuit 8 when signal / HOLD falls from “H” level to “L” level, and latch circuit 8 when signal / HOLD rises from “L” level to “H” level. Is unlatched. The output of the latch circuit 8 is the signal Pre. RX. Signal Pre. RX and Pre. The logical product signal of BS0-1 becomes the signal RX0-1, and the signal Pre. RX and Pre. The logical product signal of BS1-1 becomes the signal RX1-1. The word drivers 80 and 81 in FIG. 19 are activated by these signals RX0-1 and RX1-1.

  While the word driver 80 of the way W0 is activated by the signal RX0-1, the word lines WL belonging to the way W0 are sequentially selected to refresh the data. In addition, while the word driver 81 of the way W1 is activated by the signal RX1-1, the word lines WL belonging to the way W1 are sequentially selected to refresh the data. Next, block BK2 is selected and the same operation is performed.

  In the first embodiment, a high-order address is assigned to each way W0, W1, a low-order address is assigned to each word line WL belonging to each way WL, W1, and a way W (eg, W0) having a certain block BK (eg, BK1). ) Is selected, the signal RX (in this case, RX0-1) is not reset and held at the “H” level of the activation level. Therefore, the power consumption is reduced as compared with the conventional case where the signal RX is reset every time one word line WL is selected. Specifically, the signal RX is reset only once while n / 2 word lines WL are selected [only once for j (j <n / 2) in the first selected way W0]. Therefore, the power for resetting the signal RX is about 2 / n as compared with the prior art. Usually, since the number of word lines WL per block BK is 256 or 512, the power consumption is one hundredth.

  In the first embodiment, the number of ways is 2, but it goes without saying that the same effect can be obtained even if the number of ways is 3 or more.

  Further, the word drivers 80 to 82 may be constituted by CMOS transistors, or may be constituted by N channel MOS transistors.

[Embodiment 2]
5 is a diagram showing a layout of a row decoder 42 and a memory mat 44 of a DRAM according to the second embodiment of the present invention, and FIG. 6 is an enlarged view of a main part of FIG.

  Referring to FIGS. 5 and 6, in this DRAM, a divided word line system and a 2-way system are adopted. Each word line WL of each of the memory array blocks BK1 to BKm is divided into a plurality of sub word lines SWL, each of the memory array blocks BK1 to BKm is divided into a plurality of sub blocks 16, and the SD band 15 corresponding to each sub block 16 Is provided.

  A plurality of sub word lines SWL of each sub block 16 are divided into two ways W0 and W1. The way W0 includes odd-numbered sub-word lines SWL, and the way W1 includes even-numbered sub-word lines SWL. Signals SD0 and SD1 are assigned to the ways W0 and W1, respectively, and a signal group X is assigned to each sub-word line SWL belonging to the ways W0 and W1. Each sub word line SWL of each sub block 16 is specified by signals SD0 and SD1 and a signal group X.

  In order to configure the 2-way method, each SD band is provided corresponding to each odd row of the corresponding sub-block 16 and each even row of the corresponding sub-block 16. A word driver 18. Each word driver group WD1-WDm includes a word driver 82 provided corresponding to each adjacent word driver 17 and 18 in each SD band 16 of the corresponding memory array block BK1-BKm. Word driver 82 receives signal group X. Word driver 17 receives the output of word driver 82 and signal SD0. Word driver 18 receives the output of word driver 82 and signal SD1. The outputs of the word drivers 17 and 18 are respectively applied to the corresponding sub word lines SWL.

  FIG. 7 is a circuit block diagram showing a circuit for generating a signal SD in the DRAM shown in FIGS. 5 and 6, and FIG. 8 is a time chart showing its operation.

  7 and 8 show signals RXM, Pre. RX, RX0-1, RX1-1 are signals XDM, Pre. The circuit configuration and operation are the same as those shown in FIGS. 1 and 4 except that SD, SD0, and SD1 are replaced. That is, the signals SD0 and SD1 for selecting the ways W0 and W1 are not reset while the sub word lines SWL belonging to the respective ways W0 and W1 are selected.

Also in this second embodiment, the same effect as in the first embodiment can be obtained.
[Embodiment 3]
FIG. 9 is a diagram showing a layout of a row decoder 42 and a memory mat 44 of a DRAM according to the third embodiment of the present invention, and FIG. 10 is a partially omitted circuit block diagram showing a configuration of the word driver group WD shown in FIG. It is.

  FIG. 11 is a circuit block diagram showing the main part of the DRAM, and FIG. 12 is a circuit block diagram showing the configuration of the address generation circuit 41.

  Referring to FIGS. 11 and 12, this DRAM is different from the DRAM of the first embodiment in that latch circuit 8 and AND gate 10 are removed and address signals C8 to Cq involved in selection of block BK. Are output from the flip-flops FF0 to FF6 of the address generation circuit 41, and the address signals C1 to C7 related to the predecode signals XJ, XK, XL are output from the flip-flops FF7 to FFq-1, and are related to the selection of the way W. The signal is output from the flip-flop FFq. The refresh address change detection circuit 2 outputs a pulse signal in response to the change of the address signal C1, that is, the output of the flip-flop FF7 of the address generation circuit 41. The latch circuit 9 receives the signal XJM, and the output of the latch circuit 9 becomes the signal XJ. A latch circuit 9 is provided corresponding to each of the predecode signals XJ, XK, XL, and Reset.

  FIG. 13 is a time chart showing the operation of the DRAM shown in FIGS. The signal / HOLD is generated in the same manner as in the first embodiment. Signal XJM is latched in latch circuit 9 when signal / HOLD falls from "H" level to "L" level, and latch circuit 9 when signal / HOLD rises from "L" level to "H" level. Is unlatched. The output of the latch circuit 9 is a signal XJ. The same applies to the other signals XK, XL, and Reset.

  While the two word drivers 80 and 81 of the blocks BK1 to BKm are activated by the predecode signals XJ, XK, XL, and Reset, the signals RX0-1 to RX0-m or the signals RX1-1 to RX1-m are activated. Sequentially become "H" level, and word lines WL in each of the blocks BK1 to BKm are sequentially selected to refresh data. At the start of the refresh, signals RX0-h (h ≧ 1) to while the two word drivers 80 and 81 of each block BK1 to BKm are activated by the predecode signals XJ, XK, XL, Reset. RX0-m or signals RXh-1 to RX1-m are sequentially set to "H" level, and word lines WL in blocks BKh to BKm are sequentially selected to refresh data.

  In the third embodiment, a lower address is assigned to each block BK1 to BKm, an upper address is assigned to each word line WL belonging to each block BK1 to BKm, and a word line WL with each block BK1 to BKm is selected. During this time, the predecode signals XJ, XK, XL and Reset are not reset. Therefore, the power consumption is reduced as compared with the conventional case where the predecode signals XJ, XK, XL, and Reset are reset every time one word line WL is selected.

[Embodiment 4]
FIG. 14 is a circuit block diagram showing a configuration of a main part of a DRAM according to the fourth embodiment of the present invention.

  Referring to FIG. 14, this DRAM is different from the conventional DRAM in that self-refresh start trigger generating circuit 1, refresh address change detecting circuit 2, AND gate 3, flip-flop 4, latch circuit 8, 9, an inverter 19 and a NAND gate 20 are newly provided. The refresh address change detection circuit 2 normally outputs an “H” level, and outputs an “L” level pulse in response to a change in the address signal C8, that is, the output of the flip-flop FF8 of the address generation circuit 41. A signal BLIM is input to the latch circuit 8 through the inverter 19, and a block selection signal φBL 1 is input to the latch circuit 9. The NAND gate 20 outputs the output signal Pre. BLI and the output signal Pre. Receives BS1 and outputs a signal BLIR1. The self-refresh start trigger generating circuit 1, the AND gate 3, the flip-flop 4 and the latch circuits 8 and 9 are the same as those described with reference to FIG. Latch circuit 9 and NAND gate 20 are provided corresponding to each of signals BLIL1, BLIR1, BLIL2, BLIR2,. The latch circuit 9 is supplied with block selection signals φBL2, φBL1, φBL3, φBL2,... Related to the corresponding signals BLIL1, BLIR1, BLIL2, BLIR2,.

  FIG. 15 is a time chart showing the operation of the DRAM shown in FIG. The signal / HOLD is generated in the same manner as in the first embodiment. Signals φBL1 and φBL2 are inverted signals of internal clock signal int / RAS during the period when blocks BK1 and BK2 are selected, respectively. Signal Pre. BS1, Pre. BS2 is a signal obtained by latching the signals φBL1 and φBL2 by the latch circuit 9. Of the signals φBL1 and φBL2, the signals obtained by smoothing the portion that is the inverted signal of the internal clock signal int / RAS to “H” level are respectively Pre. BS1, Pre. BS2. The signal BLIM is a signal that swings at substantially the same timing as the internal clock signal int / RAS and is output from the clock generation circuit 38. Signal Pre. BLI is a signal obtained by latching the inverted signal of the signal BLIM by the latch circuit 8.

  Signal BLIR0 is always at “H” level. Signals BLIL1 and BLIR2 are both signals Pre. BS2 and Pre. This is an inverted signal of the logical product signal of BLI, and is normally “H” level and is “L” level while the block BK2 is selected. The signal BLIR1 is the signal Pre. BS1 and Pre. This is an inverted signal of the logical product signal of BLI, and is normally “H” level, and is “L” level while the block BK1 is selected.

  While signal BLIR1 is at "L" level, each word line WL of block BK1 is sequentially selected to refresh data. While the signals BLIL1 and BLIR2 are at "L" level, the word lines WL of the block BK2 are sequentially selected to refresh the data. Next, the block BK3 is selected and the same operation is performed.

  In this embodiment, while a certain block BK (for example, BK2) is selected, signal BLI (in this case, BLIL1 and BLIR2) is not reset and held at the “L” level of the activation level. Therefore, power consumption is reduced as compared with the conventional case where the signal BLI is reset every time one word line WL is selected.

  In addition, when this embodiment and any one of Embodiments 1 to 3 are combined, power consumption is further reduced.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

1 is a circuit block diagram showing a configuration of a main part of a DRAM according to a first embodiment of the present invention. FIG. 2 is a partially omitted circuit block diagram illustrating a configuration of an address generation circuit illustrated in FIG. 1. FIG. 2 is a circuit block diagram illustrating a configuration of a latch circuit illustrated in FIG. 1. 2 is a time chart illustrating an operation of the DRAM illustrated in FIG. 1. It is a figure which shows the layout of the row decoder and memory mat of DRAM by Embodiment 2 of this invention. FIG. 6 is a partially omitted circuit block diagram illustrating a configuration of main parts of the row decoder and the memory mat illustrated in FIG. 5. FIG. 6 is a circuit block diagram illustrating a configuration of a main part of the DRAM illustrated in FIG. 5. 6 is a time chart showing the operation of the DRAM shown in FIG. It is a figure which shows the layout of the row decoder and memory mat of DRAM by Embodiment 3 of this invention. FIG. 10 is a circuit block diagram showing a configuration of the word driver shown in FIG. 9. FIG. 10 is a circuit block diagram illustrating a configuration of a main part of the DRAM illustrated in FIG. 9. FIG. 12 is a partially omitted circuit block diagram illustrating a configuration of the address generation circuit illustrated in FIG. 11. 10 is a time chart showing the operation of the DRAM shown in FIG. FIG. 10 is a circuit block diagram showing a configuration of a main part of a DRAM according to a fourth embodiment of the present invention. 15 is a time chart showing the operation of the DRAM shown in FIG. It is a circuit block diagram which shows the structure of the conventional DRAM. FIG. 17 is a circuit block diagram in which a part of the configuration of the address generation circuit shown in FIG. 16 is omitted. FIG. 17 is a partially omitted diagram illustrating a layout of a row decoder and a memory mat illustrated in FIG. 16. FIG. 19 is a circuit block diagram in which a part of the configuration of the memory array block and its periphery shown in FIG. 18 is omitted. 17 is a time chart showing a self-refresh operation of the DRAM shown in FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Self-refresh start trigger generation circuit, 2 Refresh address change detection circuit, 3 AND gate, 4 Flip-flop, 5,6 NAND gate, 7 Inverter, 8, 9 Latch circuit, 10 AND gate, 11 Transfer gate, 12-14 Inverter , 15 SD band, 16 sub-block, 17, 18 word driver, 19 inverter, 20 NAND gate, 38 clock generation circuit, 39 row and column address buffer, 40 address switching circuit, 41 address generation circuit, 42 row decoder, 43 column decoder 44 memory mat, 45 memory array, 46 sense refresh amplifier + input / output control circuit, 47 input buffer, 48 output buffer, 49 oscillator, 50 address counter, 51 sense refresh Amplifier, 61, 64 transfer gate, 70 bit line equalize circuit, 80-82 word driver, FF0-FFq flip-flop, BK1-BKm memory array block, SA0-SAm sense amplifier band, WD1-WDm word driver group, MC memory cell , WL Word line, BL, / BL Bit line.

Claims (5)

A semiconductor memory device having a self-refresh mode,
A plurality of memory cells arranged in a plurality of rows and a plurality of columns, each provided corresponding to the plurality of rows, a plurality of word lines previously divided into a plurality of groups, and provided corresponding to the plurality of columns, respectively. A memory array including a plurality of bit line pairs, wherein in the self-refresh mode, a first address is assigned to each group, and a second address is assigned to each word line belonging to each group;
In response to the setting of the self-refresh mode, each second address belonging to a certain first address of the memory array is sequentially designated, and then each second address belonging to another first address Addressing means for sequentially specifying
Provided corresponding to each first address, an activation level signal is output in response to the start of designation of the corresponding first address by the address designating means, and the self-refresh mode is set. When the second address belonging to the first address is sequentially designated, an activation level signal is output, and the deactivation level is determined in response to the end of designation of the corresponding first address. First signal generating means for outputting an inactivation level signal each time the address designation is completed when the self-refresh mode is not set,
It is provided corresponding to each second address, an activation level signal is output in response to the start of designation of the corresponding second address by the address designation means, and designation of the address is completed. Second signal generating means for outputting a signal of an inactivation level in response,
A word line that is provided corresponding to each word line and that activates the corresponding word line in response to the activation level signal being output from both the corresponding first and second signal generating means. A semiconductor memory device comprising: drive means; and refresh execution means for refreshing data in a memory cell corresponding to a word line activated by the word line drive means. The memory array is divided into a plurality of blocks,
The word line driving means is provided at a position where each block is arranged for each of the plurality of blocks.
2. The semiconductor memory device according to claim 1, wherein an output of said first signal generating means is given to each of said word line driving means through a sub word line passing over said plurality of blocks. A semiconductor memory device having a self-refresh mode,
Each of a plurality of memory cells arranged in a plurality of rows and a plurality of columns, a plurality of word lines provided corresponding to the plurality of rows, and a plurality of bit line pairs provided corresponding to the plurality of columns, respectively. A memory array in which, in the self-refresh mode, a first address is assigned to each block and a second address is assigned to each word line belonging to each block;
Refresh execution means provided between each of the plurality of blocks of the memory array for refreshing data of memory cells corresponding to the word lines at the activation level of adjacent blocks;
In response to the setting of the self-refresh mode, each second address belonging to a certain first address of the memory array is sequentially designated, and then each second address belonging to another first address Addressing means for sequentially specifying
Provided corresponding to each first address, an activation level signal is output in response to the start of designation of the corresponding first address by the address designating means, and the self-refresh mode is set. When the second address belonging to the first address is sequentially designated, an activation level signal is output, and the deactivation level is determined in response to the end of designation of the corresponding first address. First signal generating means for outputting an inactivation level signal each time the address designation is completed when the self-refresh mode is not set,
It is provided corresponding to each second address, an activation level signal is output in response to the start of designation of the corresponding second address by the address designation means, and designation of the address is completed. Second signal generating means for outputting a signal of an inactivation level in response,
Corresponding to each block, the corresponding block and the corresponding refresh execution means are connected in response to the activation level signal being output from the corresponding first signal generation means, and the refresh execution means In response to the output of the activation level signal from both the corresponding first and second signal generation means provided corresponding to each word line, and the connection means for separating the other blocks from the other blocks A semiconductor memory device comprising word line driving means for setting a corresponding word line to an activation level. The refresh execution means is a sense amplifier,
4. The semiconductor memory device according to claim 3, wherein said connection means is a transistor for connecting a bit line pair of a corresponding block and a sense amplifier.   4. The semiconductor memory device according to claim 1, wherein an activation level of an output signal of said first signal generation circuit is a boosted voltage level higher than a power supply voltage level. 5.

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