JP2005317900A - Vacuum equipment, its particle monitoring method, program and particle monitoring window member - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum device with which cleanliness of the vacuum device can correctly be evaluated, and to provide a particle monitoring method of the device. <P>SOLUTION: A semiconductor manufacturing device 1000 is provided with a process chamber 100 for performing a product processing on a wafer. In the process chamber 100, an intake air line for introducing purge gas with a valve 120 formed therein is connected to an upper part, and a roughing exhaust line 200 in which a valve (a) is formed is connected to a lower part. A dry pump 220 which ejects gas in the process chamber 100 and a particle monitoring device 210 monitoring particles between the valve (a) and the dry pump 220 are arranged in the roughing exhaust line 200. In the semiconductor manufacturing device 1000, the valve 120 is opened, purge gas is supplied and physical vibration by an impulse wave is given into the process chamber 100. Thus, deposits are peeled and the particles are monitored. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a vacuum apparatus provided with a particle monitor, a particle monitoring method thereof, a program, and a particle monitor window member.

  2. Description of the Related Art A semiconductor manufacturing apparatus (FIG. 10) using plasma is used to perform a commercialization process such as an etching process on a semiconductor wafer (hereinafter referred to as “wafer”). When particles generated in the commercialization process adhere to and contaminate the commercialized wafer, the yield decreases, so that high cleanliness is required for the semiconductor manufacturing apparatus.

  FIG. 10 is a diagram schematically showing a configuration of a conventional semiconductor manufacturing apparatus.

  In FIG. 10, a semiconductor manufacturing apparatus 800 includes a process chamber 810 made up of a cylindrical container for subjecting a wafer to a commercialization process. Inside the process chamber 810 is provided a wafer stage in which an electrode to which a high voltage (HV) can be applied is embedded, and the wafer is placed on the wafer stage. A shower head 811a having a plurality of through holes is disposed at the upper part of the process chamber 800, and the shower head 811a is a corrosive processing gas (process gas) used in the commercialization process through these through holes. ) Into the process chamber 810.

  The process chamber 810 is connected to an intake line made of a tubular member for introducing purge gas at the upper portion, and a valve 811 for regulating the flow rate of the purge gas to be supplied to the process chamber 810 is connected to the intake line. Is provided. A roughing line 820 made of a thin tubular member and a main vacuuming line 830 made of a thick tubular member are connected to the lower part, and the roughing line 820 and the main vacuuming line 830 join the exhaust line.

  The roughing line 820 is provided with a dry pump (DP) 822 that discharges the gas in the process chamber 810 via an exhaust line, and a valve 821 that regulates the flow rate of the gas discharged by the dry pump 822. It has been.

  From the process chamber 810 side, the main evacuation line 830 has an automatic pressure controller (APC) 831, an isolation valve (ISO) 832 which is a gate valve, and a dry pump 822 in order from the process chamber 810 side. A turbo-molecular pump (TMP) 833 is provided.

  In the semiconductor manufacturing apparatus 800, when the pressure in the process chamber 810 is reduced for a commercialization process, the process chamber 810 is exhausted through the roughing line 820 and the valve 821 is closed, and then the main vacuuming line 830 is used. The process chamber 810 is brought to a desired degree of vacuum. A high vacuum is required when performing an etching process in a product process. During the commercialization process, the exhaust through the main vacuum line 830 is continued in order to maintain the degree of vacuum.

  After the commercialization process is completed, purge gas is supplied to the process chamber 810 through the intake line and exhausted through the exhaust line, whereby particles floating in the process chamber 810 are discharged from the process chamber 810 together with the purge gas. Then, the process chamber 810 is cleaned with a purge gas (see, for example, Patent Document 1).

  In order to evaluate the cleanliness of the process chamber 810, an attempt is made to monitor particles by installing a commercially available optical particle monitoring device (PM) (not shown).

  In order to monitor particles discharged during the commercialization process in real time, the particle monitor device is isolated between the automatic pressure regulator 831 and the process chamber 810 on the main vacuum line 830, and the automatic pressure regulator 831. Often installed between the valve 832 or in the process chamber 810.

  Further, in the particle monitoring device, particularly, parts such as a glass lens are easily corroded by a corrosive process gas. For example, the glass part is whitened one week after the start of use. Accordingly, replacement and maintenance of the parts are necessary, and not only the cost of the semiconductor manufacturing apparatus 800 increases, but also the operation time decreases. On the other hand, by installing the particle monitor device on the roughing line 820, it is possible to prevent the glass parts of the particle monitor device from being corroded.

  Since it is difficult for the particle monitoring device to monitor particles moving at a high speed of, for example, 20 m / sec under high vacuum, in order to improve the particle detection probability, a main vacuum drawing line 830 made of a thick tubular member is used. There has been proposed a technique for monitoring particles by regulating the flow area of gas passing through an exhaust line (see, for example, Patent Document 2).

Further, the semiconductor manufacturing apparatus 800 of FIG. 10 includes a transparent window member (not shown) made of quartz glass (SiO ₂ ) provided so as to face the process chamber 810, and the window member is, for example, the process chamber 810. It functions as a window for introducing microwaves.

When the quartz glass constituting the window member is exposed to a fluorine-based plasma atmosphere, silicon (Si) atoms in the quartz glass react with active molecules such as fluorine radicals contained in the fluorine-based plasma to react with silicon fluoride (SiF). ₄ ) Volatilizes and contaminates the wafer, and the window member is eroded from the surface to cause fogging (deterioration).

In order to suppress this deterioration, the quartz glass is usually heated. In order to suppress the deterioration of the window member, a window member made of a member in which the first phase made of quartz is dispersed in the second phase made of alumina (Al ₂ O ₃ ) and quartz has also been proposed. (For example, see Patent Document 3). In addition, it is not a window member, but as a part used in a process chamber such as a pelger or a focus ring, a material in which silica (SiO ₂ ) is mixed with aluminum (Al) and melted to form an amorphous state of silica and alumina Has been proposed (see, for example, Patent Document 4). In any of the techniques, resistance to fluorine-based plasma and active molecules is improved by containing aluminum in a predetermined member.
Japanese Utility Model Publication No. 06-056999 JP-A-11-304688 JP 2001-261364 A JP 2003-292337 A

  However, since the techniques described in Patent Documents 1 and 2 only monitor particles that move together with the gas discharged from the process chamber 810, the deposit (deposit) attached to the inner wall of the process chamber 810 is monitored. Can not do it.

  Deposits cause separation from the inner wall during productization processing and the like to contaminate the wafer. Therefore, it is required to more accurately evaluate the cleanliness of the process chamber 810 by actively monitoring the deposits as particles. It is done.

  Further, when heating is performed to suppress the deterioration of the window member, a failure occurs in the electric circuit provided in the semiconductor manufacturing apparatus 800 or the deterioration of the laser apparatus is promoted.

  Furthermore, in the technology for incorporating aluminum into the predetermined member as described above, since aluminum atoms are dispersed in silica or quartz, plasma resistance and resistance to active molecules are efficiently exhibited on the surface. This cannot be done, and the frequency of replacement of the predetermined member increases. As a result, the time required for the replacement becomes longer, the productivity of the semiconductor manufacturing apparatus 800 is lowered, the replacement cost is increased, and the cost of the semiconductor manufacturing apparatus 800 is increased. Furthermore, from the viewpoint of preventing the productivity of the semiconductor manufacturing apparatus 800 from being reduced and reducing the cost, the particle monitoring window member included in the particle monitoring apparatus of the semiconductor manufacturing apparatus 800 connected to, for example, the main evacuation line is also frequently replaced. Low is required.

  A first object of the present invention is to provide a vacuum apparatus, a particle monitoring method thereof, and a program capable of reliably monitoring particles including deposits that are easily peeled off and accurately evaluating the cleanliness of the vacuum apparatus. It is in.

  The second object of the present invention is to provide a particle monitor window member that can exhibit resistance to active molecules efficiently and reduce the exchange frequency.

  In order to achieve the first object, the vacuum apparatus according to claim 1 is a container that defines a predetermined space, an exhaust unit that exhausts gas in the container through a predetermined exhaust pipe, and At least one exhaust regulating means for regulating a flow rate of the exhausted gas provided in the exhaust pipe; and provided in the exhaust pipe between the at least one exhaust regulating means and the exhaust means, and particles in the exhaust pipe In a vacuum device comprising a particle monitoring means for monitoring the purge means for supplying a purge gas into the container via a predetermined supply pipe, provided in the supply pipe between the purge means and the container, Supply restriction means for restricting the flow rate of the purge gas to be supplied, wherein the supply restriction means allows the at least one exhaust restriction means to discharge the gas. The Rutoki, starting the supply of the purge gas, the particles to be the monitor, characterized in that it comprises particles liberated in the container by the supply of the purge gas.

  A vacuum apparatus according to claim 2 is the vacuum apparatus according to claim 1, wherein a processing gas supply means for supplying a corrosive processing gas into the container, and another exhaust means for discharging the processing gas. The at least one exhaust restriction unit prohibits the discharge of the gas when the processing gas is discharged by the other exhaust unit.

  According to a third aspect of the present invention, in the vacuum device according to the first or second aspect, the supply restricting means supplies the supply gas so that the pressure value of the purge gas is twice or more the pressure value in the container. The flow rate of the purge gas is regulated.

  A vacuum device according to claim 4 is the vacuum device according to any one of claims 1 to 3, further comprising power supply means for discharging into the container, wherein the power supply means includes the at least one exhaust restriction. The discharge is started when the means allows the gas to be discharged, and the particles to be monitored include particles released into the container by the discharge.

  In order to achieve the first object, the vacuum device according to claim 5 is a container that defines a predetermined space, an exhaust unit that exhausts gas in the container through a predetermined exhaust pipe, and At least one exhaust regulating means for regulating a flow rate of the exhausted gas provided in the exhaust pipe; and provided in the exhaust pipe between the at least one exhaust regulating means and the exhaust means, and particles in the exhaust pipe In a vacuum apparatus comprising a particle monitoring means for monitoring the gas, the apparatus further comprises power supply means for discharging into the container, and the power supply means is configured such that when the at least one exhaust restriction means allows the gas to be discharged. The discharge is started, and the monitored particles include particles released into the container by the discharge.

  A vacuum apparatus according to a sixth aspect is the vacuum apparatus according to the fifth aspect, wherein the power supply means generates electromagnetic stress in the container by the discharge.

  The vacuum apparatus according to claim 7 is the vacuum apparatus according to claim 5 or 6, wherein the purge means supplies a purge gas into the container via a predetermined supply pipe, and the purge means is interposed between the purge means and the container. A supply restricting means for restricting a flow rate of the supplied purge gas, and the supply restricting means, when the at least one exhaust restricting means permits discharge of the gas, The supply of the purge gas is started, and the monitored particles include particles released into the container by the supply of the purge gas.

  In order to achieve the first object, a particle monitoring method according to claim 8 is a particle monitoring method for a vacuum container including a container that defines a predetermined space, and the gas in the container is exhausted to a predetermined level. In a particle monitoring method comprising an exhaust step for exhausting through a pipe and a particle monitor step for monitoring particles in the exhaust pipe, an exhaust regulating step for regulating the flow rate of the exhausted gas, and a purge gas in the container A purge step for supplying the gas through a predetermined supply pipe; and a supply regulation step for regulating a flow rate of the supplied purge gas. In the supply regulation step, discharge of the gas is permitted in the exhaust regulation step. The purge gas supply is started when the Characterized in that it comprises particles liberated in the container by the supply of gas.

  The particle monitoring method according to claim 9 is the particle monitoring method according to claim 8, wherein a processing gas supply step for supplying a corrosive processing gas into the container and another exhaust for discharging the processing gas. And the exhaust restriction step prohibits the discharge of the gas when the processing gas is discharged in the other exhaust step.

  The particle monitoring method according to claim 10 is the particle monitoring method according to claim 8 or 9, wherein, in the supply regulation step, the pressure value of the purge gas is twice or more the pressure value in the container. The flow rate of the purge gas supplied is regulated.

  The particle monitoring method according to claim 11, wherein the particle monitoring method according to any one of claims 8 to 10 includes a discharging step of discharging into the container, wherein the discharging step includes: The discharge is started when the gas discharge is allowed, and the monitored particles include particles released into the container by the discharge.

  In order to achieve the first object, a particle monitoring method according to claim 12 is a particle monitoring method for a vacuum apparatus including a container that defines a predetermined space, and the gas in the container is exhausted to a predetermined level. In a particle monitoring method, comprising: an exhaust step for exhausting through a pipe; an exhaust control step for regulating the flow rate of the exhausted gas; and a particle monitor step for monitoring particles in the exhaust pipe. A discharge step, and in the discharge step, when discharge of the gas is permitted in the exhaust restriction step, the discharge is started, and the monitored particles are released into the container by the discharge. It is characterized by containing particles.

  A particle monitoring method according to a thirteenth aspect is the particle monitoring method according to the twelfth aspect, wherein in the discharging step, electromagnetic stress is generated in the container by the discharging.

  A particle monitoring method according to claim 14 is the particle monitoring method according to claim 12 or 13, wherein a purge step for supplying purge gas into the container through a predetermined supply pipe and a flow rate of the supplied purge gas are regulated. The supply regulation step, and in the supply regulation step, when the gas discharge is permitted in the exhaust regulation step, the supply of the purge gas is started, and the monitored particles It is characterized by containing particles released in the container by supply.

  In order to achieve the first object, a program according to claim 15 is a program for causing a computer to execute a particle monitoring method for a vacuum container including a container that defines a predetermined space, wherein the gas in the container is stored. An exhaust module that discharges the exhaust gas through a predetermined exhaust pipe, a particle monitor module that monitors particles in the exhaust pipe, an exhaust control module that regulates the flow rate of the exhausted gas, and a purge gas in the container A purge module that is supplied via a supply pipe; and a supply regulation module that regulates a flow rate of the supplied purge gas. The supply regulation module is configured to allow the gas to be discharged by the exhaust regulation module. The purge gas supply is started, and the monitored particles Characterized in that it comprises particles liberated in the container by a sheet.

  In order to achieve the first object, a program according to claim 16 is a program for causing a computer to execute a particle monitoring method of a vacuum apparatus including a container that defines a predetermined space, the gas in the container being An exhaust module that discharges gas through a predetermined exhaust pipe, an exhaust control module that regulates the flow rate of the exhausted gas, a particle monitor module that monitors particles in the exhaust pipe, and a discharge module that discharges into the container The discharge module starts the discharge when the exhaust restriction module allows the gas to be discharged, and the monitored particles include particles released into the container by the discharge. It is characterized by that.

  In order to achieve the second object, a particle monitor window member according to claim 17 is provided between a housing that defines a predetermined space and a particle monitor device that monitors particles in the housing. In the particle monitor window member made of a transparent base material, the base material includes a transparent base and a surface treatment layer in which a predetermined treatment is applied to a surface of the base facing the gas in the casing. It is characterized by that.

  The window member according to claim 18 is the window member according to claim 17, wherein the surface treatment layer contains a material selected from the group consisting of carbon, yttrium, yttria, and calcium fluoride. It is characterized by.

  The window member according to claim 19 is the window member according to claim 18, wherein the carbon is made of crystalline diamond or diamond-like carbon.

  The window member according to claim 20 is the window member according to claim 18 or 19, wherein the content of the one material is within a range of 10 to 100% by mass in the total mass of the surface treatment layer. Features.

  The window member according to claim 21 is the window member according to claim 17, wherein the surface treatment layer contains aluminum or alumina.

  The window member according to claim 22 is the window member according to claim 21, wherein the content of the aluminum or alumina is in the range of 10 to 100% by mass in the total mass of the surface treatment layer. To do.

  The window member according to claim 23 is the window member according to any one of claims 17 to 22, wherein the predetermined treatment is a coating.

  The window member according to claim 24 is the window member according to any one of claims 17 to 22, wherein the predetermined treatment is doping.

  The window member according to claim 25 is the window member according to any one of claims 17 to 24, wherein the surface treatment layer has a thickness in a range of 100 nm to 10 µm.

  The window member according to claim 26 is the window member according to any one of claims 17 to 25, wherein the base is made of glass containing silicon as a main component, and the surface treatment layer is formed of gas in the casing. It is characterized by exposure to contained active molecules.

  In order to achieve the second object, the particle monitoring window member according to claim 27 is provided between a housing that defines a predetermined space and a particle monitoring device that monitors particles in the container. In the particle monitor window member made of a transparent base material, the base material is made of calcium fluoride.

  A window member according to a twenty-eighth aspect is the window member according to any one of the seventeenth to twenty-seventh aspects, wherein the casing is formed of a container or a pipe.

  According to the vacuum device according to claim 1, the particle monitoring method for a vacuum device according to claim 8, or the program according to claim 15, the supply of purge gas started when gas discharge is allowed into the container. Since the released particles are monitored, it is possible to reliably monitor particles including deposits that are easily peeled off, and to accurately evaluate the cleanliness of the vacuum apparatus.

  According to the particle monitoring method of the vacuum device according to claim 2 or the vacuum device according to claim 9, the discharge of gas through the exhaust pipe is prohibited when the processing gas is exhausted through another exhaust pipe. Thus, the particle monitor device can be prevented from being corroded and the life can be extended.

  According to the vacuum device according to claim 3 or the particle monitoring method of the vacuum device according to claim 10, the flow rate of the purge gas to be supplied is regulated so that the pressure value of the purge gas becomes twice or more the pressure value in the container. Therefore, a shock wave can be reliably generated in the container, and the deposit can be reliably peeled off.

  According to the particle monitoring method of the vacuum device according to claim 4 or the vacuum device according to claim 11, in addition to the particles released by the supply of the purge gas, the inside of the container is caused by the discharge that is started when the gas discharge is allowed. Therefore, the particles including deposits that easily peel off can be more reliably monitored, and the cleanliness of the vacuum apparatus can be more accurately evaluated.

  According to the vacuum device according to claim 5, the particle monitoring method for a vacuum device according to claim 12, or the program according to claim 16, the gas is released into the container by a discharge that is started when gas discharge is allowed. Since the particles are monitored, it is possible to reliably monitor the particles including deposits that are easily peeled off and accurately evaluate the cleanliness of the vacuum apparatus.

  According to the particle monitoring method of the vacuum device according to the sixth aspect or the vacuum device according to the thirteenth aspect, since the electromagnetic stress is generated in the container by the discharge, the deposit can be reliably peeled off.

  According to the vacuum monitor of claim 7 or the particle monitor method of the vacuum device of claim 14, supply of purge gas in addition to particles released into the container by discharge started when gas discharge is allowed Since the released particles are monitored by the above, it is possible to more reliably monitor particles including deposits that are easily peeled off, and more accurately evaluate the cleanliness of the vacuum apparatus.

  According to the particle monitor window member according to claim 17, the transparent base material includes a transparent base and a surface treatment layer in which a predetermined treatment is performed on a surface of the base facing the gas in the container. As a result, resistance to active molecules can be exhibited efficiently, and the exchange frequency can be reduced.

  According to the particle monitor window member of claim 18, since the surface treatment layer contains one material selected from the group of materials consisting of carbon, yttrium, yttria, and calcium fluoride, The resistance to active molecules can be more efficiently exhibited, and the exchange frequency can be reliably reduced.

  According to the particle monitor window member according to claim 20, since the content of the material constituting the surface treatment layer is within a range of 10 to 100% by mass in the total mass of the surface treatment layer, resistance to active molecules is obtained. Can be improved.

  According to the particle monitor window member according to claim 21, since the surface treatment layer contains aluminum or alumina, the surface treatment layer more effectively exhibits resistance to active molecules, and the replacement frequency is reliably reduced. Can be made.

  According to the particle monitor window member according to claim 22, since the content of aluminum or alumina is in the range of 10 to 100% by mass in the total mass of the surface treatment layer, the resistance to active molecules can be improved. it can.

  According to the particle monitor window member of the twenty-third aspect, since the predetermined treatment is coating, the surface treatment layer can be easily provided on the base.

  According to the particle monitor window member of the twenty-fourth aspect, since the predetermined treatment is doping, the surface treatment layer can be reliably provided on the base.

  According to the particle monitor window member of claim 25, since the thickness of the surface treatment layer is in the range of 100 nm to 10 μm, the resistance to active molecules can be improved.

  According to the particle monitor window member of claim 26, since the base is made of glass containing silicon as a main component and the surface treatment layer is exposed to the plasma atmosphere generated in the container, the silicon is exposed to the plasma atmosphere. It is possible to more efficiently exhibit the resistance to active molecules in the surface treatment layer while preventing the occurrence of the occurrence of the occurrence, and to reliably reduce the exchange frequency.

  According to the particle monitor window member of the twenty-seventh aspect, since the transparent base material is made of calcium fluoride, the resistance to active molecules can be efficiently exhibited and the replacement frequency can be reduced.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 schematically shows a configuration of a semiconductor manufacturing apparatus including a vacuum apparatus according to the first embodiment of the present invention.

  In FIG. 1, a semiconductor manufacturing apparatus 1000 performs a commercialization process using plasma such as etching, sputtering, and CVD (chemical vapor deposition) on a semiconductor wafer (hereinafter referred to as “wafer”) as an object to be processed. A process chamber 100 (vacuum apparatus) comprising a cylindrical container for application is provided. The process chamber 100 is connected to a load lock chamber having an arm for transferring a wafer, and the wafer is carried into the process chamber 100 by the arm of the load lock chamber.

  The process chamber 100 includes a chamber wall 110 that defines a space necessary for a commercialization process, and a wafer stage 120 mounted on the lower upper surface of the chamber wall 110 inside the process chamber 100. An electrode 113 connected to a high voltage power source 112 is embedded in the process chamber 100, and the electrode 113 is formed on the upper surface of the wafer stage 120 by the arm by the high voltage HV applied from the high voltage power source 112. The mounted wafer is electrostatically attracted (chucked) to the wafer stage 120. A shower head 120a having a plurality of through holes is disposed in the upper portion of the process chamber 100, and the shower head 120a is a corrosive processing gas (process gas) used in the commercialization process through these through holes. ) Into the process chamber.

  In addition, an intake line made of a tubular member for introducing purge gas is connected to the process chamber 100 at the top, and a valve 120 for regulating the flow rate of purge gas to be supplied to the process chamber 100 is connected to the intake line. Is provided.

As the purge gas, a gas that is low in corrosivity and is easily available and inexpensive is used. Examples of such a gas include nitrogen gas (N ₂ ), helium gas (He), argon gas (Ar), dry air, oxygen ( O ₂ ). In addition, since halogen gas corrodes the glass-made components of the particle monitor apparatus mentioned later, using it as purge gas is not appropriate.

  For example, a roughing line 200 made of a thin tubular member having a diameter of 25 mm and a main vacuum drawing line 300 made of a thick tubular member having a diameter of 150 mm, for example, are connected to the lower portion of the process chamber 100. And the main evacuation line 300 join the exhaust line. The exhaust line exhausts gas from the roughing line 200 and / or the main vacuuming line 300 to the outside of the semiconductor manufacturing apparatus 1000.

  In the roughing line 200, a dry pump (DP) 220 that exhausts the gas in the process chamber 100 through the exhaust line, and a flow rate of the gas exhausted by the dry pump 220, that is, flows from the process chamber 100 to the exhaust line. Valves a and b for regulating the gas flow rate and an optical particle monitor (PM) 210 for monitoring particles between the valves a and b are provided.

  The main evacuation line 300 includes, in order from the process chamber 100 side, an automatic pressure regulator (APC) 310 that monitors the pressure in the process chamber 100, an isolation valve (ISO) 320 that is a gate valve, and the dry pump 220. A connected turbo molecular pump (TMP) 330 is provided. The isolation valve 320 regulates exhaust of the process chamber 100 by the turbo molecular pump 330. The automatic pressure adjustment device 310 adjusts the degree of restriction by the isolation valve 320 while monitoring the pressure in the process chamber 100. The turbo molecular pump 330 has a larger displacement than the dry pump 220.

  In the semiconductor manufacturing apparatus 1000, when the pressure in the process chamber 100 is reduced for a commercialization process, the valves a and b are evacuated through the roughing line 200 until the pressure in the process chamber 100 reaches a predetermined pressure. After closing, the pressure in the process chamber 100 is monitored by the automatic pressure adjusting device 310 through the main vacuum line 300 and the desired pressure or degree of vacuum is achieved. During the commercialization process, the corrosive process gas is supplied to the process chamber 100 through the shower head 120a, so that the exhaust through the main vacuum line 300 is continued.

  FIG. 2 is a diagram schematically showing the configuration of the particle monitor apparatus 210 of FIG.

  In FIG. 2, the particle monitor 210 includes a housing 211 disposed so as to surround the outer periphery of the roughing line 200, a laser light source 212 that emits laser light having a wavelength in the visible light region, and a laser light source 212. A mirror 213 that guides the irradiated laser light to the roughing line 200 in the housing 211, a beam damper 214 on which light that has passed through the roughing line 200 is incident, and particles that have passed through the roughing line 200 are scattered. 3 includes a light receiving element 215 that receives laser light through a particle monitor window member 219 made of quartz provided in a housing 211, and a lens 216 that focuses scattered laser light incident on the light receiving element 215. As described later, the laser beam received by the light receiving element 215 is detected as a detection signal. The particle monitor window member 219 is disposed at a predetermined angle with respect to the incident direction of the laser beam.

The roughing line 200 is made of quartz glass whose surface is partially or entirely coated with an antireflection film made of magnesium fluoride (MgF ₂ ) or the like at least in a portion irradiated with laser light.

  The mirror 213 is configured to raster scan the entire area of the inner diameter in the cross section of the exhaust line 200 using the laser light emitted from the laser light source 212. As the beam damper 214, a black solid having innumerable irregularities on its surface, or one having an optical labyrinth structure can be used. As the light receiving element 215, a photomultiplier tube (PMT), a charge coupled device (CCD), or the like can be used.

  FIG. 3 is a graph showing the intensity of the detection signal detected by the light receiving element 215 of the particle monitor apparatus 210 of FIG.

  As shown in FIG. 3, the signal detected by the light receiving element 215 regularly includes a noise signal due to stray light. Since this noise signal has a predetermined noise width, a threshold value of signal intensity obtained by adding a predetermined margin value to the upper limit value of the noise width is set in the particle monitor device 210.

  The particle monitor device 210 is configured to count detection signals having an intensity equal to or greater than a set threshold value as particles. The cleanliness of the process chamber 100 can be evaluated based on the number of counted particles.

  FIG. 4 is a timing chart showing the sequence of the particle monitoring method executed by the semiconductor manufacturing apparatus 1000 of FIG.

  As shown in FIG. 4, when particles are monitored after the commercialization process is completed and the wafer is unloaded, first, the particle monitor apparatus 210 is turned on and the valves a and b on the process chamber 100 side are turned on. At the same time, the automatic pressure regulator 310 is turned off and the isolation valve 320 (not shown) is closed. As a result, the exhaust of the process chamber 100 is switched from the main vacuum line 300 to the rough line 200.

Next, the valve 120 is opened, and the purge gas is supplied to the process chamber 100 through the intake line at a flow rate value higher than the flow rate value used for the conventional purge gas cleaning, for example, 70 L / min (70000 SCCM). In the process chamber 100, for example, since the product processing is normally performed in a high vacuum atmosphere of, for example, 10 ⁻¹ to 10 ⁻⁴ Pa, the purge gas is in the process chamber 100 at a pressure value higher than the pressure value in the process chamber 100. The pressure value in the process chamber 100 is increased. The final stable ultimate pressure value due to the increase in the pressure value is preferably 133.3 Pa (1 Torr) or more. By setting the stable ultimate pressure value to 133.3 Pa or more, a large viscous force is applied to the discharged gas, and it is possible to easily discharge the particles together with this gas.

  Therefore, the rapid inflow of the purge gas gives physical vibrations due to shock waves to all objects in the process chamber 100, that is, the chamber wall 110 and the wafer stage 120.

  The purge gas is preferably supplied to the intake line so that the pressure value of the purge gas is twice or more the pressure value in the process chamber 100. Thereby, vibration can be reliably applied to the object in the process chamber 100.

  Thereafter, the high voltage HV is applied three times from the high voltage power source 112 to the electrode 113 with the valve 120 opened. The application of these high voltages HV will be described later as a second embodiment of the present invention.

  When the particle monitoring is ended, the valve 120 and the valves a and b are sequentially closed, the isolation valve 320 is opened, and the state immediately after the end of the commercialization process is restored.

  Since this sequence is executed after the commercialization process is completed and the wafer is carried out, contamination of the wafer can be prevented. Further, it is preferably performed when no process gas is used. Thereby, it can prevent that the glass components of the particle monitor apparatus 210 corrode.

  According to FIG. 4, when the particles are monitored, physical vibration (shock wave) by the purge gas is applied to the object in the process chamber 100.

  FIG. 5 is a graph showing the number of particles measured by the particle monitor device 210 in the sequence of FIG. FIG. 5 shows an example of the measurement result before and after the vibration due to the purge gas occurs.

  As shown in FIG. 5, a large number of particles, for example, a total of 9000 particles are counted for several seconds after the valve 120 is opened. This is because deposits peeled off from the chamber wall 110, the wafer stage 111, and the like due to vibration by the purge gas are counted as particles. Thereby, the particle | grains containing the deposit which peels easily can be monitored reliably, and the cleanliness of the process chamber 100 can be evaluated correctly. As shown in FIG. 4, the opening time of the valve 120 is 1 to 5 seconds, preferably 2 to 5 seconds. That is, the time required for the vibration to diffuse in the process chamber 100 can be sufficiently secured. Preferably there is.

  4 and 5, the valve 120 is opened, and the physical vibration caused by the purge gas is applied to the object in the process chamber 100 at least once, so that the deposit is positively peeled and the particles are reliably removed. Since it can be monitored, the cleanliness of the process chamber 100 can be accurately evaluated.

  In addition, since particles are monitored after the commercialization process, by closing the valve a during the commercialization process, the inflow of process gas is prevented, and the glass parts of the particle monitoring device 210 are reliably corroded. Therefore, the life of the particle monitor device 210 can be extended and the productivity of the semiconductor manufacturing apparatus 1000 can be improved.

  In the above embodiment, physical vibration generated by supply of the purge gas is used, but any vibration to be used may be used. For example, an ultrasonic wave of several tens of kHz may be applied in the process chamber 100 in order to generate vibration. Further, since physical vibration is used, it is preferable that the intake line does not have an orifice structure at a place where it is connected to the process chamber 100 or the vacuum transfer chamber 100 ′.

  Moreover, it is preferable to generate physical vibrations a plurality of times. In this case, every time a physical vibration is generated, the peeling of the deposit is suppressed, so the number of particles tends to decrease. Thereby, after evaluating that the cleanliness of the process chamber 100 is higher, the next commercialization process can be performed.

  As shown in FIG. 4, the above embodiment is preferably executed in combination with the second embodiment of the present invention described below.

  Since the configuration of the semiconductor manufacturing apparatus including the vacuum apparatus according to the second embodiment of the present invention is the same as that of the above-described first embodiment, the description thereof is omitted, and the particles of the semiconductor manufacturing apparatus 1000 are omitted. Only the differences in the monitoring method will be described.

  As shown in FIG. 4, the semiconductor manufacturing apparatus 1000 according to the present embodiment has a high voltage from the high voltage power supply 112 to the electrode 113 when the valves a and b are open. For example, HV is applied three times intermittently. The applied high voltage HV is preferably +1 kV or more or −1 kV or less. More preferably, a voltage of ± 1 kV is applied alternately. Thereby, the electromagnetic stress (electromagnetic stress) mentioned later can be generated efficiently.

  Each time the high voltage HV is applied, a DC (Direct Current) discharge is instantaneously generated in the process chamber 100, and an instantaneous potential gradient is formed on the chamber wall 110 and the wafer stage 111. Stress is generated. The electromagnetic stress causes the deposit to peel off from the chamber wall 110, the wafer stage 111, etc., and the peeled deposit is discharged as a particle together with the purge gas and is monitored by the particle monitor device 210.

  The particle count result of the particle monitor device 210 when the high voltage HV is applied once is the same as the result shown in FIG. However, every time the number of times the high voltage HV is intermittently applied increases, the peeling of the deposit due to electromagnetic stress is suppressed, so the number of particles tends to decrease. Therefore, the application of the high voltage HV is preferably performed at a number of times within the range of 1 to 10 times, more preferably 2 to 5 times.

  According to the present embodiment, by applying the high voltage HV at least once, the deposit can be positively peeled and the particles can be reliably monitored. Therefore, the cleanliness of the process chamber 100 can be accurately determined. Can be evaluated.

  In addition, since the application of the high voltage HV is intermittently performed a plurality of times, the next commercialization process can be performed after evaluating that the cleanliness of the process chamber 100 is higher.

  In the present embodiment, the application of the high voltage HV is performed with the valve 120 open as shown in FIG. 4, but it may be performed with the valve 120 closed. Thereby, for example, the wafer can be prevented from vibrating due to the purge gas from the intake line.

  Further, the high voltage HV is applied to form an instantaneous potential gradient on the chamber wall 110 and the wafer stage 111, but a high frequency RF (Radio Frequency) may be applied. An RF discharge is generated by the application of RF, and electromagnetic stress can be generated as in the case of applying a high voltage HV. It is preferable that the RF application does not keep the RF discharge for a long time, and may be performed for about 1 second, for example.

  As shown in FIG. 4, the above embodiment is preferably executed in combination with the first embodiment.

  In the first and second embodiments, the exhaust lines connected to the process chamber 100 are two systems of the roughing line 200 and the main evacuation line 300, but three or more systems may be used. In the case of one exhaust line, it will be described later as a third embodiment of the present invention.

  FIG. 6 is a diagram schematically showing a configuration of a semiconductor processing apparatus including the vacuum apparatus according to the third embodiment.

  In FIG. 6, a vacuum transfer device 1000 ′ as a vacuum device includes a vacuum transfer chamber 100 ′ having a single exhaust line. The vacuum transfer chamber 100 'is applied to, for example, a load lock chamber connected to the process chamber 100 of the semiconductor manufacturing apparatus 1000 of FIG. 1, and the load lock chamber includes an arm for transferring a wafer. The vacuum transfer apparatus 1000 ′ transfers the wafer to the wafer stage 120 of the process chamber 100 using an arm.

  The vacuum transfer chamber 100 ′ includes an intake line including a valve 120 ′, a dry pump (DP) 220 ′, valves a ′ and b ′, and a particle monitor device (PM) 210 provided between the valves a ′ and b ′. An exhaust line 200 having “is connected”.

  That is, the configuration of the present embodiment is a configuration in which the main evacuation line 300 is omitted in the configuration of the first embodiment described above. Only the differences will be described.

  Since the turbo molecular pump 330 of the main evacuation line 300 is omitted from the vacuum transfer chamber 100 ′, the vacuum transfer chamber 100 ′ is not always at a high vacuum when monitoring particles. In that case, a certain degree of vacuum is achieved by the dry pump 220 ', and the sequence as shown in FIG. 7 is executed. The sequence shown in FIG. 7 is the same as that described with reference to FIG. 4 in the first embodiment, and a description thereof will be omitted.

  According to FIG. 6 and FIG. 7, the valve 120 ′ is opened and physical vibration caused by the purge gas is applied to the object in the vacuum transfer chamber 100 ′, so that the deposit is positively peeled and the particles are reliably removed. Since it can be monitored, the cleanliness of the vacuum transfer chamber 100 ′ can be accurately evaluated.

  In the third embodiment, the vacuum transfer chamber 1000 ′ includes one exhaust line. However, the vacuum transfer chamber 1000 ′ may include a plurality of exhaust lines. In the case where a plurality of exhaust lines are provided, the inductance of the exhaust lines, which is a coefficient representing the ease of flow of fluid such as exhausted gas, is usually different from each other. Can be applied.

  Moreover, it is preferable to execute the above embodiment in combination with the above-described second embodiment. In this case, a high voltage power supply similar to the high voltage power supply 112 is connected to the object in the vacuum transfer chamber 100 ′.

  In the first to third embodiments, the cleanliness of the process chamber 100 or the vacuum transfer chamber 100 ′ when the wafer is not present is evaluated, but an object other than the process chamber 100 or the vacuum transfer chamber 100 ′, for example, It is also possible to evaluate the cleanliness of the wafer.

  For example, first, it is evaluated that the cleanliness of the process chamber 100 is sufficiently high and there is no particle separation, and then the cleanliness of the process chamber 100 when the wafer is loaded and the wafer exists is evaluated. Then, the two cleanliness levels evaluated are compared. Thereby, the cleanliness of the wafer can be evaluated. Similarly, the cleanliness of the back surface of the wafer can be evaluated by comparing the case where the back surface of the wafer is in close contact with the wafer stage 111 and the case where it is not in close contact.

  In the first to third embodiments, the particles are monitored after the commercialization process is completed. However, the particles may be monitored before the commercialization process is completed or during the commercialization process.

  The intake line preferably has no orifice structure where it is connected to the process chamber 100 or the vacuum transfer chamber 100 ′. However, when a wafer or the like exists in the process chamber 100 or the vacuum transfer chamber 100 ′, There may be an orifice structure. Thereby, it is possible to prevent the wafer or the like from being damaged due to the purge gas imparting a physical vibration to the wafer or the like.

  In the above embodiment, the particle monitoring window member 219 in FIG. 2 is made of quartz, but may be any material as long as it is made of a transparent base material.

  Another object of the present invention is to store a storage medium storing software program codes (program codes corresponding to the sequences in FIGS. 4 and 7) for realizing the functions of the above-described embodiments, such as a computer, for example, FIG. This is also achieved by reading the program code stored in the storage medium and executing it by the computer (or CPU, MPU, etc.).

  Further, by executing the program code read out by the computer, for example, the PC 600, not only the functions of the above-described embodiments are realized, but also an operating system (operating system) operating on the PC 600 based on the instruction of the program code ( It goes without saying that the case where the functions of the above-described embodiments are realized by performing part or all of the actual processing by the OS) and the like.

  Further, after the program code read from the storage medium is written into a memory provided in a function expansion card inserted into the PC 600 or a function expansion unit connected to the computer, the function expansion is performed based on the instruction of the program code. It goes without saying that the CPU or the like provided in the card or the function expansion unit performs part or all of the actual processing and the functions of the above-described embodiments are realized by the processing.

  The above-described program only needs to be able to realize the functions of the above-described embodiments on the PC 600, and the form includes forms such as object code, a program executed by an interpreter, and script data supplied to the OS. But you can.

  As a recording medium for supplying the program, for example, RAM, NV-RAM, floppy (registered trademark) disk, optical disk, magneto-optical disk, CD-ROM, MO, CD-R, CD-RW, DVD (DVD-ROM, DVD-RAM, DVD-RW, DVD + RW), magnetic tape, non-volatile memory card, ROM, or the like may be used as long as the program can be stored. Alternatively, the program is supplied by downloading from another computer or database (not shown) connected to the Internet, a commercial network, a local area network, or the like.

  Next, a particle monitor window member according to a fourth embodiment of the present invention will be described.

  FIG. 8 is a cross-sectional view showing in detail the configuration of the particle monitor window member according to the fourth embodiment.

  The particle monitor window member according to the fourth embodiment is used in place of the particle monitor window member 219 made of quartz in the above-described first embodiment. In the fourth embodiment, the same components and elements as those of the semiconductor manufacturing apparatus 1000 according to the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

  In FIG. 8, each of the particle monitoring window members 219 has a substantially cylindrical shape, and is provided between the roughing line 200 and the particle monitoring device 210, and more specifically, formed in the roughing line 200. It is inserted into a hole having a complementary shape. The particle monitor window member 219 is not limited to a substantially cylindrical body that is inserted into the hole of the roughing line 200, and for example, has a hollow, substantially cylindrical shape having substantially the same diameter as the exhaust line 200. And the exhaust line 200 may be partially configured.

  The particle monitor window member 219 includes a transparent base 219a and a surface treatment layer 219b provided on the base 219a. The base 219a has a gas contact surface facing the gas in the roughing line 200 and a monitor surface connected to the particle monitor device 210, and the surface treatment layer 219b is described later on the gas contact surface of the base 219a. It consists of a surface treated product.

  The base 219a is preferably made of glass containing silicon as a main component, for example, quartz, but may be a transparent resin or the like.

The surface treatment layer 219b is a group of materials composed of carbon (C), yttrium (Y), yttria (Y ₂ O ₃ ), calcium fluoride (CaF ₂ ), aluminum (Al), and alumina (Al ₂ O ₃ ). Containing one material selected from When the material is carbon, it is preferably made of crystalline diamond or diamond-like carbon (DLC). By using these materials, the resistance to halogen plasma (hereinafter referred to as “plasma resistance”) and the resistance to active molecules can be sufficiently improved.

Of the above-mentioned materials, calcium fluoride is insoluble in water, has a melting point of 1373 ° C., a maximum usable temperature of 900 ° C., a hardness expressed by Knoop number of 158.3, a wavelength range of light that can be transmitted (transmission wavelength range) ) Not only has physical properties of 0.2 to 9.0 μm and a refractive index of 1.39 with respect to light having a wavelength of 1000 cm ⁻¹ , but also has high corrosion resistance to halogens and high hardness because of its high hardness. Have. Further, calcium fluoride having a high purity can be obtained easily and inexpensively. Furthermore, it is less soluble in hydrofluoric acid, which is an aqueous solution of hydrogen fluoride than quartz.

  As described above, since calcium fluoride has high pressure resistance, it is suitable as a window member, and since the maximum usable temperature is 900 ° C., it is also suitable for the process chamber 100 in which a high temperature atmosphere of about 900 ° C. is obtained. Furthermore, since the transmission wavelength region is wider than that of quartz, it is suitable for optical measurement. Therefore, it is most preferable to use calcium fluoride.

Aluminum atoms in aluminum alone and alumina react with fluorine in the plasma to produce aluminum fluoride (AlF ₃ ). The generated aluminum fluoride remains in the surface treatment layer 219b, and thus has particularly high plasma resistance to fluorine.

The halogen-based plasma includes halogen or a compound thereof that corrodes quartz glass, and examples thereof include CF ₄ / Ar / O ₂ / CO plasma, F ₂ plasma, CF ₄ , C ₄ F ₈ , and C ₅ F ₈ . There are fluorine plasma containing fluorine or a compound thereof such as fluorocarbon plasma, and chlorine (Cl ₂ ) plasma. These halogen-based plasmas contain active molecules such as halogen radicals and react with silicon atoms that are components of glass and the like to degrade glass and the like.

  Moreover, it is preferable that the material which comprises the surface treatment layer 219b exists in the range of 10-100 mass% in the total mass of the surface treatment layer 219b. This is because if the content is less than 10% by mass, the plasma resistance of the surface treatment layer 219b and the resistance to active molecules cannot be sufficiently improved.

  The thickness of the surface treatment layer 219b is preferably in the range of 100 nm to 100 μm. This is because when the thickness is less than 100 nm, the surface treatment layer 219b is easily peeled off from the base 219a when the surface treatment layer 219b is formed of a coating film described later, and is easily eroded by fluorine-based plasma when the surface treatment layer 219b is formed of a doping layer. On the other hand, if the thickness exceeds 100 μm, it becomes difficult to form on the base 219a, the manufacturing cost increases, the transparency of the surface treatment layer 219b decreases, and the particle monitor device 210 causes particles in the exhaust line 200 to be formed. This is because it becomes difficult to monitor this.

  Hereinafter, the surface treatment on the gas contact surface of the base 219a will be described.

  As the surface treatment, a coating for forming a coating film made of a material constituting the surface treatment layer 219b on the gas contact surface of the base 219a, or a surface treatment layer from the surface of the gas contact surface of the base 219a to a predetermined depth. There is doping that forms a doping layer on the base 219a by doping the material constituting the 219b, but any other method may be used.

  Examples of the coating include a method in which a mixture of the above materials such as silicon dioxide and aluminum oxide is melted and rapidly cooled on the gas contact surface of the base 219a, or a melted mixture is sprayed on the gas contact surface of the base 219a. There are a thermal spraying method, a method of forming the above material by sputtering or PVD, and the like. According to the coating, the surface treatment layer 219b can be easily provided on the base 219a.

  Examples of the doping include an ion implantation method and a method of mixing the material by partially melting the gas contact surface of the base 219a. Note that baking is preferably performed after the base 219a is doped with the above material. When the surface treatment layer 219b made of a doping layer is formed on the base 219a by doping, the boundary formed by them is not clear, but at least at a predetermined depth from the gas contact surface of the surface treatment layer 219b, It is preferable that the content of the doped material is within the above range. According to the doping, the surface treatment layer 219b provided on the base 219a is not peeled off, so that the surface treatment layer 219b can be reliably provided on the base 219a.

  According to the particle monitor window member 219 of FIG. 8, since the surface treatment layer 219b is provided on the base 219a, the surface treatment layer 219b, which is a newly configured gas contact surface, is efficiently plasma-resistant. And the resistance to active molecules can be exerted to reduce the exchange frequency. Further, since the replacement frequency is reduced, it is possible to ensure a long time for maintaining the vacuum pressure of the exhaust line 200, and to improve the productivity of the semiconductor manufacturing apparatus 1000.

  Furthermore, since the particle monitor window member 219 has plasma resistance and resistance to active molecules, and its deterioration is suppressed, the particle monitor device 210 reliably monitors particles including separated deposits, The cleanliness of the semiconductor manufacturing apparatus 1000 can be accurately evaluated.

  In the above embodiment, the particle monitor window member 219 in FIG. 8 has high transparency with respect to the wavelength of the visible light region of the laser light irradiated by the laser light source 212 and is used as a window member facing the vacuum space. It is preferable to have sufficient hardness.

  In addition, a film made of magnesium fluoride may be formed on the monitor surface of the base 219a. Thereby, reflection of the light incident on the particle monitor window member 219 can be prevented.

  In the fourth embodiment, the particle monitor window member 219 in FIG. 8 is composed of the base 219a and the surface treatment layer 219b. However, the particle monitor window member 219 may be composed of a single bulk member composed of calcium fluoride. .

  The particle monitor window member 219 can also be applied to other vacuum vessels, for example, the process chamber 100 in FIG. 1, the particle monitor device 210 'in FIG. Furthermore, you may use for members other than a particle monitor apparatus. Specific examples thereof will be described with reference to FIG.

  FIG. 9 is a partial cross-sectional view showing in detail the configuration of the semiconductor manufacturing apparatus 1000 of FIG.

  In FIG. 9, in addition to the components shown in FIG. 1, the semiconductor manufacturing apparatus 1000 includes an in situ particle monitor (ISPM) 400 that monitors particles in the process chamber 100 on the spot, a subject in the process chamber 100, For example, a CCD (charge coupled device) camera 500 that images a laser beam from the particle monitor device 400 is provided. The particle monitor device 400 and the CCD camera 500 are connected to a personal computer (PC) 600. Further, a CVD tool control unit 620 is connected to the PC 600 via a signal processing unit 610.

  The particle monitor 400 includes a laser light source 410 that irradiates a YAG laser beam having a predetermined wavelength, for example, 532 nm, with an output of 2.5 kW and a pulse of 10 kHz, an arbitrary optical system 420 that shapes the laser beam into a desired shape, and the optical A mirror 430 that reflects the laser beam incident through the system 420 in the direction of the process chamber 100 and a particle monitor window member 440 provided on the chamber wall 111 of the process chamber 100 are provided. The particle monitor window member 440 has the same configuration and material as the particle monitor window member 219 of FIG. The laser beam reflected by the mirror 430 is guided into the process chamber 100 through the particle monitor window member 440. Inside the process chamber 100, the light beam enters the beam damper 116 through the slits 114 and 115.

  The CCD camera 500 captures an image of laser light in the process chamber 100 via a not-shown CCD camera window member provided on the chamber wall 110 of the process chamber 100, and inputs the captured image to the PC 600. Thus, the number of pulses of the laser light can be measured and the sensor can function as a sensor that counts the laser light scattered by the particles in the process chamber 100. This CCD camera window member also has the same structure and material as the particle monitor window member 219 of FIG. 8, for example, the material of the surface treatment layer is made of calcium fluoride, thereby suppressing surface erosion. The replacement frequency can be reduced and the sensitivity of the sensor can be prevented from decreasing. Note that a photomultiplier tube may be used instead of the CCD camera 500 as long as it functions as a sensor.

  Further, the semiconductor manufacturing apparatus 1000 includes a focus ring 117 disposed on the wafer stage 111. The focus ring 117 is also made of the same configuration and material as the particle monitor window member 219 of FIG. 8, for example, calcium fluoride. Thereby, while being able to achieve insulation, surface erosion can be suppressed and the replacement frequency can be reduced.

  According to FIG. 9, the components in the process chamber 100 such as the window member 440, the CCD camera window member, and the focus ring 117 are made of the same structure and materials as the particle monitor window member 219 of FIG. It is possible to suppress the erosion of the surface of the resin and reduce the frequency of their replacement. Furthermore, since surface erosion is suppressed, wafer contamination in the process chamber 100 can be suppressed.

  The vacuum apparatus, the particle monitoring method thereof, and the program according to the embodiment of the present invention are not limited to the process chamber and load lock chamber of the semiconductor manufacturing apparatus, but a container that defines a predetermined space that can be evacuated, for example, a flat panel display The present invention can be applied to a liquid crystal manufacturing apparatus such as the above and other substrate processing apparatuses.

  In addition, the particle monitor window member according to the embodiment of the present invention is a transparent particle monitor for use provided between a housing that defines a predetermined space and a particle monitor device that monitors particles in the housing. It can be applied to a window member.

It is a figure which shows roughly the structure of the semiconductor manufacturing apparatus provided with the vacuum device which concerns on the 1st Embodiment of this invention. It is a figure which shows schematically the structure of the particle monitor apparatus of FIG. It is a graph which shows the intensity | strength of the detection signal detected by the light receiving element of the particle monitor apparatus of FIG. 2 is a timing chart showing a sequence of a particle monitoring method executed by the semiconductor manufacturing apparatus of FIG. 1. 5 is a graph showing the number of particles measured by a particle monitor device in the sequence of FIG. It is a figure which shows roughly the structure of the semiconductor processing apparatus provided with the vacuum device which concerns on the 3rd Embodiment of this invention. It is a timing chart which shows the sequence of the particle | grain monitoring method performed with the vacuum conveying apparatus of FIG. It is sectional drawing which shows in detail the structure of the window member for particle monitors which concerns on the 4th Embodiment of this invention. It is a fragmentary sectional view which shows the structure of the semiconductor manufacturing apparatus of FIG. 1 in detail. It is a figure which shows roughly the structure of the conventional semiconductor manufacturing apparatus.

Explanation of symbols

100 Process chamber 110 Chamber wall 111 Wafer stage 112 High voltage power supply 120 Valve 200 Roughing line 210 Particle monitor device (PM)
219, 340 Particle monitor window member 219a Base 219b Surface treatment layer 220 Dry pump (DP)
300 Main vacuum line 310 Automatic pressure regulator (APC)
320 Isolation valve (ISO)
1000 Semiconductor manufacturing equipment

Claims (28)

  A container defining a predetermined space; exhaust means for discharging the gas in the container through a predetermined exhaust pipe; and at least one exhaust provided in the exhaust pipe and regulating a flow rate of the exhausted gas. In a vacuum apparatus comprising a regulating means and a particle monitoring means provided in the exhaust pipe between the at least one exhaust regulating means and the exhaust means for monitoring particles in the exhaust pipe, a purge gas is predetermined in the container. A purge means for supplying via the supply pipe; and a supply regulating means provided in the supply pipe between the purge means and the container for regulating the flow rate of the purge gas to be supplied. Starts the supply of the purge gas when the at least one exhaust restriction means allows the gas to be discharged and is monitored Tikuru a vacuum apparatus which comprises particles liberated in the container by the supply of the purge gas.   A processing gas supply means for supplying a corrosive processing gas into the container; and another exhaust means for discharging the processing gas; and the at least one exhaust regulating means is provided by the other exhaust means. The vacuum apparatus according to claim 1, wherein the gas is prohibited from being discharged when the processing gas is discharged.   The vacuum according to claim 1 or 2, wherein the supply regulating means regulates the flow rate of the supplied purge gas so that the pressure value of the purge gas is twice or more the pressure value in the container. apparatus.   A power supply means for discharging into the container; the power supply means starts the discharge when the at least one exhaust restriction means allows the gas to be discharged; The vacuum apparatus according to claim 1, further comprising particles released in the container by the discharge.   A container defining a predetermined space; exhaust means for discharging the gas in the container through a predetermined exhaust pipe; and at least one exhaust provided in the exhaust pipe and regulating a flow rate of the exhausted gas. Electric power discharged into the container in a vacuum apparatus comprising a regulating means and a particle monitoring means provided in the exhaust pipe between the at least one exhaust regulating means and the exhaust means for monitoring particles in the exhaust pipe Supply means, and the power supply means starts the discharge when the at least one exhaust restriction means allows the gas to be discharged, and the monitored particles are moved into the container by the discharge. A vacuum apparatus characterized by containing free particles.   The vacuum apparatus according to claim 5, wherein the power supply means generates electromagnetic stress in the container by the discharge.   Purge means for supplying purge gas into the container via a predetermined supply pipe; and supply regulating means provided in the supply pipe between the purge means and the container for regulating the flow rate of the supplied purge gas; The supply restricting means starts supplying the purge gas when the at least one exhaust restricting means allows the gas to be discharged, and the monitored particles are supplied by the supply of the purge gas. The vacuum apparatus according to claim 5 or 6, wherein the container contains free particles.   A vacuum container particle monitoring method including a container that defines a predetermined space, wherein an exhaust step for discharging gas in the container through a predetermined exhaust pipe, and a particle monitor step for monitoring particles in the exhaust pipe The exhaust gas regulating step for regulating the flow rate of the exhausted gas, the purge step for supplying the purge gas into the container through a predetermined supply pipe, and the flow rate of the supplied purge gas. A supply regulation step for regulating, and in the supply regulation step, when the discharge of the gas is allowed in the exhaust regulation step, the supply of the purge gas is started, and the monitored particles are the purge gas Characterized in that it contains particles released by the supply of Over Tcl monitoring method.   A processing gas supply step for supplying a corrosive processing gas into the container; and another exhaust step for discharging the processing gas. In the exhaust restriction step, the processing is performed in the other exhaust step. 9. The particle monitoring method according to claim 8, wherein the gas is prohibited from being discharged when the working gas is discharged.   10. The particle according to claim 8, wherein, in the supply regulation step, a flow rate of the supplied purge gas is regulated so that a pressure value of the purge gas becomes twice or more a pressure value in the container. How to monitor.   A discharge step of discharging into the container, and in the discharge step, the discharge is started when the discharge of the gas is permitted in the exhaust restriction step, and the particles to be monitored are caused by the discharge. The particle monitoring method according to claim 8, wherein the container contains free particles.   A method for monitoring particles in a vacuum apparatus including a container that defines a predetermined space, wherein an exhaust step for discharging the gas in the container through a predetermined exhaust pipe, and exhaust for regulating a flow rate of the discharged gas In the particle monitoring method including a regulating step and a particle monitoring step for monitoring particles in the exhaust pipe, the particle monitoring method includes a discharging step for discharging into the container, and in the discharging step, the gas is discharged in the exhaust regulating step. A particle monitoring method, wherein the discharge is started when allowed, and the particles to be monitored include particles released into the container by the discharge.   13. The particle monitoring method according to claim 12, wherein in the discharging step, electromagnetic stress is generated in the container by the discharging.   A purge step for supplying a purge gas into the container through a predetermined supply pipe; and a supply regulation step for regulating a flow rate of the supplied purge gas. In the supply regulation step, the gas is included in the exhaust regulation step. 14. The supply of the purge gas is started when discharge of gas is permitted, and the monitored particles include particles released into the container by the supply of the purge gas. Particle monitoring method.   A program for causing a computer to execute a particle monitoring method for a vacuum container including a container that defines a predetermined space, the exhaust module for discharging the gas in the container through a predetermined exhaust pipe, and the particles in the exhaust pipe A particle monitor module that monitors the flow rate of the exhaust gas, an exhaust gas regulation module that regulates the flow rate of the exhausted gas, a purge module that supplies purge gas into the container via a predetermined supply pipe, and a flow rate of the purge gas that is supplied A supply regulation module that regulates, the supply regulation module starts supplying the purge gas when the exhaust regulation module allows the gas to be discharged, and the monitored particles It contains particles released in the container by supply. Program.   A program for causing a computer to execute a particle monitoring method of a vacuum apparatus including a container that defines a predetermined space, the exhaust module for discharging the gas in the container through a predetermined exhaust pipe, and the exhausted gas An exhaust regulation module that regulates the flow rate of gas, a particle monitor module that monitors particles in the exhaust pipe, and a discharge module that discharges into the container, wherein the exhaust regulation module allows the gas to be discharged. The program starts when the discharge is started, and the monitored particles include particles released into the container by the discharge.   In a particle monitoring window member comprising a transparent base material provided between a housing that defines a predetermined space and a particle monitoring device that monitors particles in the housing, the base material includes a transparent base and A window member comprising: a surface treatment layer having a predetermined treatment applied to a surface of the base facing the gas in the housing.   The window member according to claim 17, wherein the surface treatment layer contains one material selected from the group of materials consisting of carbon, yttrium, yttria, and calcium fluoride.   The window member according to claim 18, wherein the carbon is made of crystalline diamond or diamond-like carbon.   20. The window member according to claim 18, wherein the content of the one material is in a range of 10 to 100 mass% with respect to the total mass of the surface treatment layer.   The window member according to claim 17, wherein the surface treatment layer contains aluminum or alumina.   The window member according to claim 21, wherein the content of the aluminum or alumina is in the range of 10 to 100 mass% with respect to the total mass of the surface treatment layer.   The window member according to any one of claims 17 to 22, wherein the predetermined treatment is a coating.   The window member according to any one of claims 17 to 22, wherein the predetermined treatment is doping.   The window member according to any one of claims 17 to 24, wherein the surface treatment layer has a thickness in a range of 100 nm to 10 µm.   The said base consists of glass which has a silicon as a main component, and the said surface treatment layer is exposed to the active molecule | numerator contained in the gas in the said housing | casing, The any one of Claims 17 thru | or 25 characterized by the above-mentioned. Window member.   In a particle monitor window member made of a transparent base material provided between a casing that defines a predetermined space and a particle monitor device that monitors particles in the container, the base material is made of calcium fluoride. The window member characterized by the above-mentioned.   The window member according to any one of claims 17 to 27, wherein the casing is made of a container or a pipe.

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