JP2005302791A5 - - Google Patents

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JP2005302791A5
JP2005302791A5 JP2004112535A JP2004112535A JP2005302791A5 JP 2005302791 A5 JP2005302791 A5 JP 2005302791A5 JP 2004112535 A JP2004112535 A JP 2004112535A JP 2004112535 A JP2004112535 A JP 2004112535A JP 2005302791 A5 JP2005302791 A5 JP 2005302791A5
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shots
processed
light
wavelength
detecting
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JP2004112535A
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JP2005302791A (en
JP4497988B2 (en
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Priority to JP2004112535A priority Critical patent/JP4497988B2/en
Priority claimed from JP2004112535A external-priority patent/JP4497988B2/en
Priority to US11/002,906 priority patent/US7253885B2/en
Publication of JP2005302791A publication Critical patent/JP2005302791A/en
Priority to US11/695,705 priority patent/US7551262B2/en
Publication of JP2005302791A5 publication Critical patent/JP2005302791A5/ja
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Claims (9)

レチクルに形成されたパターンを投影光学系を介して被処理体上の複数のショットに露光する露光装置であって、
前記複数のショットの各々において、少なくとも2つ以上の計測点に複数の波長の光を照射する照射手段と、
前記計測点からの反射光を検出する検出手段と、
前記検出手段の検出結果を基に、前記複数の波長から前記計測点毎の最適波長を選択する選択手段と、
前記選択手段が選択した波長の光を用いて前記複数のショットの各々の光軸方向の位置を計測する計測手段とを有することを特徴とする露光装置。
An exposure apparatus that exposes a pattern formed on a reticle to a plurality of shots on an object to be processed via a projection optical system,
Irradiation means for irradiating at least two or more measurement points with light of a plurality of wavelengths in each of the plurality of shots;
Detecting means for detecting reflected light from the measurement point;
Based on the detection result of the detection means, a selection means for selecting an optimum wavelength for each of the measurement points from the plurality of wavelengths ,
An exposure apparatus comprising: a measuring unit that measures the position in the optical axis direction of each of the plurality of shots using light of the wavelength selected by the selecting unit.
前記照射手段は、複数のエレメントから構成される格子パターンを有するパターン板と、
前記格子パターンの像を前記複数のショットに投影する投影手段とを有し、
前記選択手段は、前記格子パターンの像の前記複数のエレメント間隔のばらつきが前記複数のショット間で最も小さい波長を選択することを特徴とする請求項1記載の露光装置。
The irradiation means includes a pattern plate having a lattice pattern composed of a plurality of elements;
Projecting means for projecting an image of the lattice pattern onto the plurality of shots;
The exposure apparatus according to claim 1, wherein the selection unit selects a wavelength having the smallest variation in the spacing between the plurality of elements in the image of the lattice pattern between the plurality of shots.
前記照射手段は、所定のパターンの像を前記複数のショットに投影する投影手段を有し、
前記選択手段は、前記所定のパターンの像のコントラストが最も大きい波長を選択することを特徴とする請求項1記載の露光装置。
The irradiation unit includes a projection unit that projects an image of a predetermined pattern onto the plurality of shots,
The exposure apparatus according to claim 1, wherein the selection unit selects a wavelength having the highest contrast of the image of the predetermined pattern.
前記照射手段は、光を透過する透過部と、前記光を遮光する遮光部とから構成される格子パターンを有するパターン板と、
前記格子パターンの像を前記複数のショットに投影する投影手段を有し、
前記選択手段は、前記格子パターンの前記透過部を通過した光の反射率が最も大きい波長を選択することを特徴とする請求項1記載の露光装置。
The irradiation means includes a pattern plate having a lattice pattern composed of a transmission part that transmits light and a light-shielding part that shields the light;
Projecting means for projecting an image of the lattice pattern onto the plurality of shots;
2. The exposure apparatus according to claim 1, wherein the selection unit selects a wavelength having the highest reflectance of light that has passed through the transmission part of the grating pattern.
前記選択手段は、前記複数の波長の光から求められる前記複数のショットの光軸方向の位置のばらつきが、前記複数のショット間で最も小さい波長を選択することを特徴とする請求項1記載の露光装置。   2. The selection unit according to claim 1, wherein the selection unit selects a wavelength having the smallest variation in position in the optical axis direction of the plurality of shots obtained from the light of the plurality of wavelengths. Exposure device. レチクルに形成されたパターンを投影光学系を介して被処理体上の複数のショットに露光する露光方法であって、
前記被処理体の複数のショットに配置された計測位置に、複数の波長の光を用いて複数のエレメントから構成されるパターンの像を投影し、前記被処理体の複数のショットからの信号波形を検出するステップと、
前記検出ステップで検出した前記信号波形を基に、前記複数の波長毎に前記複数のエレメントの間隔を求めるステップと、
前記複数のエレメントの間隔を基に、前記複数のショット内の前記計測位置における前記複数のエレメントの間隔の標準偏差を算出するステップと、
前記算出ステップで算出された前記標準偏差が最も小さい波長を選択するステップと
前記選択ステップで選択した波長の光を用いて前記被処理体の光軸方向の位置を検出するステップと、
前記検出ステップで検出した前記被処理体の光軸方向の位置に基づいて、前記被処理体を前記レチクルと同期させて走査するステップと、を有することを特徴とする波長選択方法。
An exposure method for exposing a pattern formed on a reticle to a plurality of shots on an object to be processed via a projection optical system ,
A signal waveform from a plurality of shots of the object to be processed is projected onto a measurement position arranged in a plurality of shots of the object to be processed by projecting an image of a pattern composed of a plurality of elements using light of a plurality of wavelengths. Detecting steps,
Based on the signal waveform detected in the detection step, obtaining intervals of the plurality of elements for each of the plurality of wavelengths;
Calculating a standard deviation of the intervals of the plurality of elements at the measurement positions in the plurality of shots based on the intervals of the plurality of elements;
Selecting a wavelength with the smallest standard deviation calculated in the calculating step ;
Detecting the position of the object to be processed in the optical axis direction using light of the wavelength selected in the selection step;
A wavelength selection method comprising: scanning the object to be processed in synchronization with the reticle based on the position of the object to be processed detected in the detecting step .
レチクルに形成されたパターンを投影光学系を介して被処理体上の複数のショットに露光する露光方法であって、
前記被処理体の複数のショットに配置された計測位置に、複数の波長の光を用いて一のエレメントから構成されるパターンの像を投影し、前記被処理体の複数のショットからの信号波形を検出するステップと、
前記検出ステップで検出した前記信号波形を基に、前記複数の波長毎に前記信号波形の信号コントラストを求めるステップと、
前記複数のショットの前記計測位置における前記信号コントラストが最大となる波長を選択するステップと
前記選択ステップで選択した波長の光を用いて前記被処理体の光軸方向の位置を検出するステップと、
前記検出ステップで検出した前記被処理体の光軸の位置に基づいて、前記被処理体を前記レチクルとを同期させて走査するステップと、を有することを特徴とする波長選択方法。
An exposure method for exposing a pattern formed on a reticle to a plurality of shots on an object to be processed via a projection optical system ,
A signal waveform from a plurality of shots of the object to be processed is projected onto the measurement positions arranged on the plurality of shots of the object to be processed by projecting an image of a pattern composed of one element using light of a plurality of wavelengths. Detecting steps,
Based on the signal waveform detected in the detection step, obtaining a signal contrast of the signal waveform for each of the plurality of wavelengths;
Selecting a wavelength that maximizes the signal contrast at the measurement positions of the plurality of shots ;
Detecting the position of the object to be processed in the optical axis direction using light of the wavelength selected in the selection step;
And a step of scanning the object in synchronization with the reticle based on the position of the optical axis of the object detected in the detecting step .
レチクルに形成されたパターンを投影光学系を介して被処理体上の複数のショットに露光する露光方法であって、
前記被処理体の複数のショットに配置された計測位置に、複数の波長の光を用いて一のエレメントから構成されるパターンの像を投影し、前記被処理体の複数のショットからの信号波形を検出するステップと、
前記検出ステップで検出した前記信号波形を基に、前記エレメントを通過した光の前記計測位置での反射率を算出するステップと、
前記複数のショットの前記計測位置における前記反射率が最大となる波長を選択するステップと
前記選択ステップで選択した波長の光を用いて前記被処理体の光軸方向の位置を検出するステップと、
前記検出ステップで検出した前記被処理体の光軸方向の位置に基づいて、前記被処理体を前記レチクルとを同期させて走査するステップと、を有することを特徴とする波長選択方法。
An exposure method for exposing a pattern formed on a reticle to a plurality of shots on an object to be processed via a projection optical system ,
A signal waveform from a plurality of shots of the object to be processed is projected onto the measurement positions arranged on the plurality of shots of the object to be processed by projecting an image of a pattern composed of one element using light of a plurality of wavelengths. Detecting steps,
Based on the signal waveform detected in the detection step, calculating a reflectance at the measurement position of the light that has passed through the element;
Selecting a wavelength at which the reflectance at the measurement positions of the plurality of shots is maximum ;
Detecting the position of the object to be processed in the optical axis direction using light of the wavelength selected in the selection step;
A wavelength selection method comprising: scanning the object to be processed in synchronization with the reticle based on the position in the optical axis direction of the object to be detected detected in the detecting step .
レチクルに形成されたパターンを投影光学系を介して被処理体上の複数のショットに露光する露光方法であって、
前記被処理体の複数のショットに配置された計測位置に、複数の波長の光を照射し、前記複数の位置を示す位置情報を検出するステップと、
前記検出ステップで検出した前記位置情報の前記複数の波長間の平均値から近似曲線を求めるステップと、
前記近似曲線からの前記位置情報のずれ量を算出するステップと、
前記算出ステップで算出された前記ずれ量を基に、前記複数のショット間のばらつきが最も小さくなる波長を選択するステップと
前記選択ステップで選択した波長の光を用いて前記被処理体の光軸方向の位置を検出するステップと、
前記検出ステップで検出した前記被処理体の光軸方向の位置に基づいて、前記被処理体を前記レチクルとを同期させて走査するステップと、を有することを特徴とする波長選択方法。
An exposure method for exposing a pattern formed on a reticle to a plurality of shots on an object to be processed via a projection optical system ,
Irradiating measurement positions arranged in a plurality of shots of the object to be processed with light of a plurality of wavelengths, and detecting position information indicating the plurality of positions;
Obtaining an approximate curve from an average value between the plurality of wavelengths of the position information detected in the detection step;
Calculating a shift amount of the position information from the approximate curve;
Selecting a wavelength with the smallest variation between the plurality of shots based on the shift amount calculated in the calculating step ;
Detecting the position of the object to be processed in the optical axis direction using light of the wavelength selected in the selection step;
A wavelength selection method comprising: scanning the object to be processed in synchronization with the reticle based on the position of the object to be processed detected in the detecting step .
JP2004112535A 2003-12-05 2004-04-06 Exposure apparatus and method, and wavelength selection method Expired - Fee Related JP4497988B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004112535A JP4497988B2 (en) 2004-04-06 2004-04-06 Exposure apparatus and method, and wavelength selection method
US11/002,906 US7253885B2 (en) 2003-12-05 2004-12-03 Wavelength selecting method, position detecting method and apparatus, exposure method and apparatus, and device manufacturing method
US11/695,705 US7551262B2 (en) 2003-12-05 2007-04-03 Exposure apparatus having a position detecting system and a wavelength detector

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Application Number Priority Date Filing Date Title
JP2004112535A JP4497988B2 (en) 2004-04-06 2004-04-06 Exposure apparatus and method, and wavelength selection method

Publications (3)

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JP2005302791A JP2005302791A (en) 2005-10-27
JP2005302791A5 true JP2005302791A5 (en) 2007-05-24
JP4497988B2 JP4497988B2 (en) 2010-07-07

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