JP2005294747A - Method and device for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent deposition substance from affecting a characteristic of etching, to generate plasma of a low dissociation degree which is suitable for deposition, and to secure anisotropy in an etching cycle even if cycles of etching and deposition are made into high speed in a manufacturing method of a semiconductor device to which etching and deposition are alternately applied. <P>SOLUTION: The manufacturing method of the semiconductor device to which etching and deposition are alternately applied includes a step for generating plasma and etching a substrate by a first excitation source which is connected to a processing room and which is for generating plasma, and a second excitation source which is connected to an electrode of a stage where the substrate is placed; and a step for generating plasma and depositing the substrate by the second excitation source. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor device manufacturing method and a manufacturing apparatus, and more particularly to a method for processing a semiconductor substrate such as silicon.

  In the deep processing (etching) of substrates, which is required for MEMS (Micro Electro Mechanical Systems) and micromachine fabrication, etching and deposition have been performed during the process with the aim of improving the etching speed, anisotropy and selectivity. A process method that performs processing while alternately repeating the so-called Bosch process has been proposed.

For example, as shown on pages 2 to 3 of the following Patent Document 1, when performing an etching process, SF ₆ is alternately used as an etching gas, and NH ₃ is repeatedly used as a deposition gas (in this case, a protective film is formed by nitriding). And a method for performing processing is described.

Since this method uses a highly reactive SF ₆ gas as an etching gas, (i) etching, (i) deposition; (ii) etching, (ii) deposition; (iii) etching, (iii) deposition; In each cycle in which etching and deposition are alternately repeated, isotropic etching in a direction parallel to the substrate proceeds simultaneously with etching in a direction perpendicular to the substrate during the etching of (i). Since the portion (side wall) isotropically etched in (i) is not etched because it is protected by the deposition in (i), the portion isotropically etched in (i) It remains until the end. Similarly, the first isotropically etched portion remains even after the etching after (iii).

  In Patent Document 1 described below, since the alternately repeating time is as long as several seconds to several tens of seconds, the amount of isotropic etching is large. For this reason, the etched side wall portion once etched isotropic is notched and smooth. Such a jagged processed shape is a problem because a desired etching shape cannot be obtained particularly for miniaturization, high accuracy, and high aspect ratio of MEMS devices and sensors.

In order to reduce this problem, a method of shortening the cycle of one cycle consisting of etching and deposition can be considered. However, if the gas used for etching and deposition is switched at a high speed, residual adsorbed gas and reaction product desorption from the wall cannot be exhausted sufficiently, leading to process characteristics in each cycle. The influence of can not be ignored. In particular, when reaction products adhering to the chamber wall at the time of deposition are taken into the plasma during the etching cycle, there arises a problem that a new problem arises that the etching characteristics deteriorate.
JP-A-60-126835

  The present invention has been made to solve the above-described problems, and even when the etching and deposition cycle is accelerated, the deposition material does not affect the etching characteristics. An object is to generate a plasma with a low degree of dissociation suitable for deposition and to ensure anisotropy in an etching cycle.

  According to the present invention, in a method of manufacturing a semiconductor device in which etching and deposition are applied alternately, a first excitation source for generating plasma and an electrode of a stage on which a substrate is placed are connected to a processing chamber. Generating a plasma with a second excitation source connected to the substrate and etching the substrate; and generating a plasma with the second excitation source to deposit the substrate. A manufacturing method is provided.

  According to the method of the present invention, high-pressure and low-density plasma is generated in the vicinity of the stage during deposition, so that the reaction product does not spread into the processing chamber and the amount of deposition on the walls of the processing chamber is reduced. As a result, the deposition material from the wall mixed into the plasma during the etching cycle is reduced, and the cycle between etching and deposition can be performed at a high speed. In addition, according to the present invention, since high-pressure and low-density plasma is generated in the deposition, the plasma has a low electron temperature, and excessive dissociation of the deposition gas is suppressed. Anisotropy can be secured in the etching cycle.

(Embodiment 1)
The present invention relates to a method of processing a substrate by alternately applying etching and deposition, and processing a substrate characterized in that deposition is performed with high-pressure and low-density plasma at the time of deposition. A method is provided. In particular, high-pressure and low-density plasma is preferably generated in the vicinity of the substrate.

  In the present invention, the high-pressure and low-density plasma used for deposition has a high pressure and low density compared to the plasma used for etching. By making the pressure high in this way, plasma can be generated in the vicinity of the substrate, and adsorption of deposition plasma to the side wall portion etched in the substrate can be suppressed, and etching is performed during the next etching cycle. It is possible to prevent mixing of substances that deteriorate the characteristics. In addition, by reducing the density, plasma with a low electron temperature is generated and the dissociation of the CF-based gas is suppressed, so that the deposition plasma can enter the bottom etched in the substrate. In this case, not only the vicinity of the upper opening but also the bottom can be uniformly deposited.

  More specifically, during deposition, plasma is generated near the substrate stage by generating high-pressure and low-density plasma by a second excitation source connected to the stage electrode on which the substrate is placed. As a result, the reaction product of the generated plasma is difficult to spread to the inner wall of the processing chamber, so that adhesion to the wall can be prevented. Therefore, during the next etching cycle following the deposition, the reaction products leaving the wall are reduced, and the desired etching can be performed without interfering with the etching, and the etching and deposition cycle can be performed at high speed. It can be made.

  As described above, according to the method of the present invention, it is possible to eliminate the jaggedness on the side wall of the etching site, which has occurred in the conventional method of processing a substrate by alternately using etching and deposition, and to reduce the etching rate. There is no decline.

  Hereinafter, the present invention will be described in detail with reference to the drawings.

<Device>
FIG. 1 is a schematic sectional view showing an etching apparatus used in the present invention. In FIG. 1, a stage 5 on which a substrate 4 is placed is disposed in a processing chamber 1, and an RF power source 6 as a second excitation source is connected to a stage electrode (not shown) installed on the stage 5. Yes. Further, a waveguide 8 for introducing a microwave from a microwave power source 7 as a first excitation source is attached to the processing chamber 1. Microwaves are supplied to the processing chamber 1 via the processing chamber 1 and a microwave introduction window 9 made of a dielectric such as quartz or alumina ceramic that is vacuum-sealed. A coil 2 for generating a magnetic field in the processing chamber 1 is installed around the processing chamber 1. Further, the processing chamber 1 is provided with a first pulse valve 10 for supplying an etching gas in a pulsed manner and a second pulse valve 11 for supplying a deposition gas in a pulsed manner. The introduced gas is exhausted from an exhaust port 3 provided in the processing chamber 1 by a vacuum pump (not shown).

  In the apparatus having such a configuration, when a process gas and a microwave of 2.45 GHz are introduced into the processing chamber 1 by the first excitation source 7 and a magnetic field of 745 Gauss is formed in the processing chamber 1 by the coil 2, The process gas in the chamber 1 is discharged, and ECR (Electron Cyclotron Resonance) plasma is generated. An etching apparatus using such a discharge format is generally called an ECR etching apparatus.

  Although the above apparatus has been described with respect to an ECR etching apparatus, an etching apparatus using ICP (Inductively Coupled Plasma) discharge can also be used in the present invention. In this case, ICP discharge is performed by the first excitation source. Further, the present invention may be applied to a parallel plate etching apparatus that generates plasma by applying a high frequency to two opposing electrodes (not shown). In this case, plasma is generated by connecting the first excitation source to the electrode facing the stage electrode on which the substrate is placed.

<Processing method>
A method for processing a substrate of the present invention using the apparatus having the above-described configuration will be described. First, the process gas is supplied to the processing chamber 1 in a pulse manner, and at this time, the microwave power source 7 as the first excitation source and the RF power source 6 as the second excitation source are also operated in a pulse manner. The timing of these pulse operations will be described with reference to FIG. In each pulse train in FIG. 2, the horizontal axis represents time, and each pulse train is a timing chart in which the time is shared. In FIG. 2, (a) is an etching gas, (b) is a deposition gas, (c) is an operating state of a microwave power source, (d) is an operating state of an RF power source, and (e) is a process state. Indicates the state.

  The state of the substrate when processing the substrate while alternately repeating etching and deposition by the process shown in FIG. 2 will be described with reference to the substrate cross-sectional view of FIG. In FIG. 3, an etching mask 31 for etching only a predetermined portion is formed on a substrate 32 to be etched. When the etching is started, the etching proceeds in the thickness direction of the substrate 32. Hereinafter, the progress of etching in the processing method of the present invention will be described in detail.

First, SF ₆ is introduced into the processing chamber 1 as an etching gas from the first pulse valve 9 in a pulsed manner. The reason why SF ₆ is used as the etching gas is as follows. In other words, in the fabrication of current MEMS and micromachines, the depth of etching is from μm to several hundreds of μm, so that deeper machining is required compared to LSI semiconductors. Therefore, in order to ensure productivity in the etching process, a high etching rate of μm / min or more is required. In order to obtain such an etching rate, a gas having high reactivity with respect to Si is advantageous, and in general, SF ₆ which is an F-based process gas and easy to handle is used.

  When the etching gas is introduced in a pulsed manner, the pressure in the processing chamber 1 fluctuates with time, but the pressure is set to an average value. In this case, in order to obtain a high etching rate and etching anisotropy, the pressure in the processing chamber 1 needs to be selected in a pressure region where low-pressure and high-density plasma can be generated. In the case of the above-described ECR etching apparatus, this pressure region is several tens to several thousand mPa, and can be set to an average of 666 mPa here. The method for setting the pressure can be determined by the gas flow rate to be supplied if the evacuation capacity is constant.

  Next, as shown in FIGS. 2A and 2C, the microwave power source 7 is operated in a pulse manner in synchronization with the time when the first pulse valve 10 is opened and the gas is introduced. As a result, the microwave is introduced into the processing chamber 1 through the microwave introduction window 9 and acts on the magnetic field formed in the processing chamber 1 to generate ECR plasma. The generated plasma is transported onto the substrate 4. In this state, the first pulse valve 10 is further opened and the RF power supply 6 is operated in a pulse manner as shown in FIG. As a result, an RF bias is applied to the substrate 4 and etching is performed for the period A shown in FIG.

  That is, in the etching according to the present invention, as shown in FIG. 2, the etching progresses during the period A by synchronizing the pulsed introduction of the etching gas and the operations of the microwave power source and the RF power source.

When the above etching cycle is performed, the etching in the thickness direction of the substrate shown in FIG. 3A is performed, and at the same time, isotropic is also generated in the direction parallel to the substrate by the highly reactive SF ₆ plasma. Etching proceeds.

Next, the deposition cycle will be described. The deposition gas supplied from the second pulse valve 11 to the processing chamber 1 is performed during a period in which the first pulse valve 10 supplying the etching gas is closed. The deposition gas used here is preferably a gas that, when decomposed by discharge with an RF power source, produces a CF-based polymer. Here, C ₄ F ₈ is used as the gas. When this CF polymer adheres to the silicon surface, it becomes an etching protective film. Note that the pressure in the processing chamber 1 fluctuates with time as in the case of etching, and is therefore set to an average value. As the pressure setting of the processing chamber 1, a pressure region is selected in which plasma can be generated only by the high frequency of the RF power source as the second excitation source 6. Specifically, it is set to several hundred mPa to several tens of thousands mPa, which is about one digit higher than the pressure during etching. By setting in this way, high-pressure and low-density plasma can be generated. In this case, since the pressure is determined by the gas flow rate to be supplied if the evacuation capability is constant, a larger flow rate gas can be supplied in a pulsed manner than in the etching.

  In the above state, as shown in FIGS. 2B and 2D, the RF power source 6 is pulsed in synchronization with the timing when the second pulse valve 11 is opened and the gas is introduced in a pulsed manner. When operated at a high pressure, low-density plasma is generated. The magnitude of RF to be operated in a pulsed manner is set to the power required for deposition while maintaining high frequency discharge in the above pressure range.

  In the present invention, as shown in FIG. 2, it can be set to a value larger than the RF bias power applied during the etching cycle. The plasma generated under the above conditions is a high-pressure and low-density plasma as compared with ECR plasma generated during etching. Therefore, plasma is generated mainly in the vicinity of the substrate 4 without diffusing to the side wall of the processing chamber 1. With the deposition plasma described above, deposition is performed only during the period B shown in FIG. Note that the microwave power source 7 during this period is stopped or set to a power level that does not generate plasma by itself.

  That is, in the deposition method described above, as shown in FIGS. 2B and 2D, the deposition gas and the RF power source are operated in a pulse manner, respectively, so that the deposition in the period B shown in FIG. Will be performed.

  When deposition is performed, a CF-based polymer film adheres to the side wall 33 etched in the etching cycle shown in FIG. 3A and the bottom of the etching, and a protective film 34 shown in FIG. 3B is formed. Is done.

  When the protective film 34 is formed, the process proceeds to the next etching cycle, and etching is performed by generating etching plasma by the method described above. When etching is started, the protective film formed on the bottom of the etching is removed at an initial stage of the etching cycle by anisotropic etching in the direction toward the substrate. Since the silicon surface appears at the bottom from which the protective film has been removed, etching proceeds in the direction toward the silicon substrate. On the other hand, the protective film formed on the etching side wall 33 is etched to some extent by isotropic etching in a direction parallel to the substrate. However, since the isotropic etching rate is small, the protective film is not completely removed, and the silicon surface of the etching sidewall 33 is protected to prevent etching in the direction parallel to the substrate. Therefore, the Si side wall shape shown in FIG. 3A is maintained, and the etching shape shown in FIG. 3C is formed.

  When the cycle of alternately performing the etching and deposition described above is repeated, the processing of the substrate progresses in the order of (D) and (E) shown in FIG. 3, and an etching shape along the mask 31 is obtained. .

  Here, if the cycle is shortened by repeating the above-described etching and deposition at a high speed, the amount etched in one cycle becomes small, so that the jaggedness of the side wall shown in FIG. The degree is improved. In this case, the etching amount in one etching cycle is small, but the repetition rate is increased, so that the etching rate can be maintained.

  Note that if such etching and deposition are repeated at high speed, the deposition gas may be mixed into the etching gas during etching, which may adversely affect the etching characteristics. Since the plasma during deposition has a high atmospheric pressure and low density and is generated near the substrate, reaction products from the plasma are difficult to diffuse and adhere to the wall of the processing chamber 1, The above problem can be solved. That is, since there are few deposits on the wall due to the deposition gas, there is no influence on the etching characteristics due to the separation of the reaction product and the residual adsorbed gas, and the desired etching performance can be obtained.

  Note that the timing of each pulse shown in FIG. 2 does not need to be strictly synchronized, and a better machining cycle can be achieved by setting it appropriately variable according to the process gas type and plasma conditions. .

  In addition, it will be described with reference to FIGS. 4 and 5 that the following effects can be obtained when high-pressure low-density plasma is used as the deposition plasma in the deposition cycle of the etching method of the present invention.

  In FIG. 4, an etching mask 41 is provided on a silicon substrate 42, and an etching sidewall 43 and an etching bottom 45 are formed by performing etching. Reference numeral 44 denotes a protective film adhered during the deposition cycle. Similarly in FIG. 5, an etching mask 51 is formed on the silicon substrate 52, and etching sidewalls 53 and an etching bottom 55 are formed by performing etching. Reference numeral 54 denotes a protective film attached during the deposition cycle.

  In the processing of MEMS and micromachines, deep drilling of several hundred μm may be required. In that case, it is important to securely transport the deposit to the bottom of the etching, form a protective film on the side wall of the bottom, and ensure anisotropy. However, if the deposition plasma is generated with the same discharge method and the same pressure as the plasma at the time of etching (low pressure high density plasma) described in the above prior art, the following problems occur.

That is, since the plasma at the time of the above-described conventional etching is a low-pressure high-density plasma, the electron temperature is high and the plasma density is also high. For this reason, the dissociation of C ₄ F _{8 as} the deposition gas proceeds more than necessary, and the C, F, and CF species having a large adhesion probability shown in FIG. As a result, the deposited material serving as the side wall protective film easily adheres to the vicinity of the opening at the top of the etching side wall, and does not reach the etching bottom 45. For this reason, a sufficient protective film cannot be formed on the side wall at the bottom, and isotropic etching proceeds, and a desired etching shape cannot be obtained.

  On the other hand, in the deposition cycle according to the method of the present invention, high-frequency plasma is generated under high pressure conditions of several hundred mPa to tens of thousands mPa, so that low-density plasma with a low electron temperature can be generated. As a result, excessive dissociation of the CF-based gas is suppressed, CFx (x = 2, 3) radicals having a low adhesion probability shown in FIG. 5 are abundant, and the deposit is transported to the bottom of the pattern. Thereby, the side wall protective film 54 is formed on the entire surface of the etching side wall 53 from the etching opening to the etching bottom 55, and anisotropic etching can be performed.

  In the present invention, in the above-described deposition cycle, the power of the RF power source, which is the second excitation source applied to the stage electrode, may be temporally changed between pulsed operation times. In this case, in the RF power timing sequence shown in FIG. 6D, the magnitude of the RF power to be applied in a pulse manner is set large in the initial stage immediately after the application. The period during which the RF power is increased is set to a time during which discharge starts and plasma is stably formed, and thereafter, the RF power is reduced to that required for deposition. In general, in the case of high-frequency discharge, poor ignition of discharge occurs in a high-pressure atmosphere. However, by applying a large amount of RF power temporarily, high-frequency discharge can be started reliably and deposition plasma can be generated, so that a stable protective film can be formed. 6A, 6B, 6C, and 6E are the same as those in FIG.

  The method for manufacturing a semiconductor device of the present invention described in Embodiment 1 above requires, for example, etching with a high aspect ratio (width / depth), and a micro cooling device that requires flatness of a channel wall. Can be used for the manufacture of semiconductor devices such as forming a microchannel and a channel for a chemical microdevice (μ-TAS). This is because it is possible to deepen a substrate using a silicon material, and it is possible to suitably reduce the jaggedness of the etching side wall that becomes the flow path wall.

(Embodiment 2)
<Device>
Next, the case where the method of the present invention is carried out using an apparatus having the configuration shown in FIG. 7 will be described. In FIG. 7, the plasma chamber 72 communicates with the processing chamber 71 through a partition plate 73. The plasma chamber 72 is provided with a first pulse valve 710 for supplying an etching gas in a pulsed manner and a third pulse valve 713 for supplying a gas that does not directly contribute to the process in a pulsed manner. A second pulse valve 712 for supplying the deposition gas in a pulsed manner is attached to the processing chamber 71. In FIG. 7, the configuration other than these is the same as that of the apparatus of FIG.

<Processing method>
In the apparatus configured as described above, the progress of the process will be described with reference to the timing chart of pulse operation shown in FIG. SF ₆ as an etching gas is introduced into the plasma chamber 72 in a pulse manner from the first pulse valve 710. The etching gas introduced into the plasma chamber 72 is exhausted from the exhaust port provided in the processing chamber 71 through the partition plate 73 as in the first embodiment. In this case, the opening of the partition plate 73 is set to be smaller than the side wall (diameter of the plasma chamber) of the plasma chamber 72 so that a pressure difference is generated between the plasma chamber 72 and the processing chamber 71. Desirably, the opening diameter is set such that the plasma chamber pressure is several times the processing chamber pressure.

  Next, as shown in FIGS. 8A and 8D, the microwave that is the first excitation source is synchronized with the time when the first pulse valve 710 is opened and the gas is introduced in a pulsed manner. ECR plasma is generated by operating the power supply in a pulsed manner. The generated plasma diffuses from the plasma chamber 72 to the processing chamber 71 and is transported onto the substrate. In this state, as shown in FIG. 8E, the RF power source, which is the second excitation source, is operated in a pulsed manner in synchronization with the timing when the first pulse valve 710 is opened and the gas is introduced. Let As a result, an RF bias is applied to the substrate, and etching is performed only during the period A shown in FIG. When the above etching cycle is performed, the same etching as that in the first embodiment is performed.

  That is, as shown in FIGS. 8A, 8D, and 8E, the introduction of gas by the first pulse valve, the pulse operation of the microwave power supply, and the pulse operation of the RF power supply are performed in synchronization. Thus, etching is performed.

Next, the deposition cycle will be described. As shown in FIG. 8B, the deposition gas supplied from the second pulse valve 712 to the processing chamber 71 is supplied during the period when the first pulse valve 710 that supplies the etching gas is closed. At the same time, as shown in FIG. 8C, a gas that does not contribute to etching is supplied in a pulse manner from the third pulse valve 713 in synchronization with the second pulse valve 712. The deposition gas is C ₄ F ₈ as in the first embodiment, and the rare gas Ar is used as the gas that does not contribute to the etching. For the pressure setting of the processing chamber 71, a pressure region in which plasma can be generated only by a high frequency from an RF power source similar to that in the first embodiment is selected. That is, it is set to several hundred mPa to several tens of thousands mPa, which is about one digit higher than the pressure at the time of etching that enables discharge by high frequency discharge. The method for setting the pressure is determined by the gas flow rate to be supplied if the vacuum exhaust capability is constant. In this case, the C ₄ F ₈ gas flow rate may be set to a flow rate required for deposition, and the pressure range described above may be obtained by the total flow rate obtained by adding Ar gas thereto.

  In the above state, in synchronization with the time when the second pulse valve 712 is opened and the gas is introduced in a pulsed manner, as shown in FIG. 8 (e), the RF power source as the second excitation source is pulsed. When it is operated automatically, high-frequency plasma is generated. As in the first embodiment, the plasma generated under the above conditions is a high-pressure and low-density plasma as compared with the ECR plasma generated during etching. Therefore, the plasma is generated mainly in the vicinity of the substrate without diffusing to the side wall of the processing chamber 71 or the plasma chamber 72. With the deposition plasma described above, deposition is performed only during the period B shown in FIG.

  When the apparatus of the second embodiment is used, radicals (active species) in the plasma in the deposition cycle are also caused by the difference in pressure between the plasma chamber and the processing chamber generated by supplying Ar gas from the plasma chamber 72. Difficult to diffuse to the side. Accordingly, the amount of deposits on the wall is reduced, and the desired etching performance can be obtained without affecting the etching characteristics due to the separation of reaction products and residual adsorbed gas.

In the second embodiment, the substrate can be processed using an apparatus having the structure shown in FIG. 9 instead of the apparatus having the structure shown in FIG. In FIG. 9, a shower ring 914 is attached to the second pulse valve 912. In the deposition in the machining cycle, the deposition gas C ₄ F ₈ is introduced from the second pulse valve 912 into the processing chamber through the shower ring 914. The shower ring is installed around the substrate and has a hole (gas blowing hole) for supplying gas toward the substrate. The configuration other than that described above is the same as that of the apparatus shown in FIG.

By using the apparatus of FIG. 9 as described above, it is possible to generate deposition plasma in the vicinity of the substrate, particularly by supplying deposition gas via the shower ring 914. Therefore, the residence time of the active species in the plasma during the deposition during the deposition is shortened and exhausted from the processing chamber before the gas dissociation proceeds, so that excessive dissociation of C ₄ F ₈ is reduced. Can do. When excessive dissociation of C ₄ F ₈ is suppressed, as described with reference to FIG. 5, a large number of radicals having a low adhesion rate to the etching wall such as CF ₂ and CF ₃ are generated, and such deposition plasma is generated. Transported to the bottom of the etch. As a result, a protective film is formed on the entire etching side surface from the etching opening to the bottom, and anisotropic etching is realized in the etching cycle.

  Note that the timing of each pulse shown in FIG. 8 does not need to be strictly synchronized, and a better machining cycle can be achieved by setting it appropriately variably according to the process gas type and plasma conditions. .

  The semiconductor device manufacturing method of the present invention described in the second embodiment requires, for example, etching with a high aspect ratio (width / depth) as in the first embodiment, and the flow path wall is flat. It can be used for manufacturing a semiconductor device such as forming a micro flow path of a micro cooling device that requires high performance, or forming a flow path of a chemical micro device (μ-TAS). This is because it is possible to deepen a substrate using a silicon material, and it is possible to suitably reduce the jaggedness of the etching side wall that becomes the flow path wall.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

It is a schematic sectional drawing which shows the etching apparatus used for this invention. It is a figure showing the timing chart of the method of processing the board | substrate of this invention. It is a schematic sectional drawing showing the state of a board | substrate when processed with the method of processing the board | substrate of this invention. It is a schematic sectional drawing which shows the state of formation of the protective film in a board | substrate when the deposition in a prior art is applied. It is a schematic sectional drawing which shows the state of formation of the protective film in a board | substrate when the deposition in this invention is applied. In FIG. 2, it is a figure showing the timing chart at the time of changing the electric power of RF power supply temporally between pulse-like operation time. It is a schematic sectional drawing which shows another etching apparatus used for this invention. It is a figure showing the timing chart of the method of processing the board | substrate of this invention at the time of using the apparatus of FIG. It is a schematic sectional drawing which shows another etching apparatus used for this invention.

Explanation of symbols

  1,71 processing chamber, 2 coils, 3 exhaust ports, 4,32,42,52 substrate, 5 stage, 6 RF power supply, 7 microwave power supply, 8 waveguide, 9 microwave introduction window, 10,710 1st Pulse valve, 11, 712, 912 Second pulse valve, 31, 41, 51 Etching mask, 33, 43, 53 Etching sidewall, 34, 54 Protective film, 45, 55 Etching bottom, 72 Plasma chamber, 73 Partition plate, 713 Third pulse valve, 914 shower ring.

Claims (10)

In a method for manufacturing a semiconductor device in which etching and deposition are applied alternately,
Etching the substrate by generating plasma by a first excitation source connected to the processing chamber for generating plasma and a second excitation source connected to an electrode of a stage on which the substrate is placed; Generating a plasma by the second excitation source to deposit a substrate.   2. The method of manufacturing a semiconductor device according to claim 1, wherein a rare gas is added to the deposition gas when performing the deposition.   3. The semiconductor device according to claim 1, wherein when the processing chamber is separated into the plasma chamber and the processing chamber using a partition plate, an etching gas is supplied to the plasma chamber and a deposition gas is supplied to the processing chamber. Manufacturing method.   4. The method of manufacturing a semiconductor device according to claim 3, wherein a rare gas is supplied to the plasma chamber by operating a valve provided for supplying the rare gas to the plasma chamber during deposition.   5. The semiconductor device according to claim 1, wherein an output of the second excitation source applied at the time of deposition is larger than an output of the second excitation source applied at the time of etching. Manufacturing method.   The output of the second excitation source applied at the time of deposition is larger than the minimum output required for deposition at the initial stage of application, according to any one of claims 1 to 5. A method for manufacturing a semiconductor device.   The method for manufacturing a semiconductor device according to claim 1, wherein the pressure at the time of deposition is larger than the pressure at the time of etching.   8. The method of manufacturing a semiconductor device according to claim 1, wherein a deposition gas is supplied from a gas blowout hole provided in the vicinity of the substrate. A processing chamber for reacting by supplying gas;
A stage provided with electrodes in the processing chamber for mounting a substrate;
A first excitation source for generating microwaves connected to the processing chamber;
A second excitation source connected to the electrode of the stage;
Gas supply means for supplying gas into the processing chamber,
An apparatus for manufacturing a semiconductor device, wherein plasma is generated by the first excitation source and the second excitation source to perform etching, and plasma is generated by a second excitation source to perform deposition . A plasma chamber for reacting by supplying an etching gas;
A processing chamber for communicating with the plasma chamber via a partition plate having an opening, for performing a reaction by supplying a deposition gas;
A stage provided with electrodes in the processing chamber for mounting a substrate;
A first excitation source for generating a microwave connected to the plasma chamber;
And a second excitation source connected to the electrode of the stage.

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