JP2005293476A - Flash memory rewriting system, flash memory rewriting method and program - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a flash memory rewriting system in which old contents before rewriting do not remain in a flash memory after rewriting.
A composite processing apparatus includes: a flash memory that can rewrite data; a RAM that temporarily stores data to be written to the flash memory; and a CPU that controls writing of data to the flash memory. The CPU 61 selects a rewriting method for the flash memory 63 in accordance with a rewriting method instruction command received from the host computer 100.
[Selection] Figure 2

Description

  The present invention relates to a flash memory rewriting system, a flash memory rewriting method, and a program.

  In information devices such as printers and scanners, firmware is separated into a boot sector and a main program sector and stored in a flash memory. For example, in the case of a printer, a main program that is a program for controlling the normal mode of the printer is stored in the main program sector. In addition, a boot program for executing a printer boot process and a rewrite mode program for controlling the printer rewrite mode to rewrite the flash memory are stored in the boot sector. Here, the sector is an area that can be erased and written collectively in the flash memory.

  The flash memory is rewritten in units of sectors. Usually, information device firmware is upgraded to add new functions to information devices, firmware bug fixes, customization for specific customers, etc., so flash memory is rewritten relatively frequently. .

  When rewriting a conventional flash memory, first, the data in the update target sector in the flash memory is copied to the RAM. Then, after the copy is completed, the sector to be updated is collectively erased (sector initialization) by the sector erase program.

Next, the data copied to the RAM is edited, and after the editing in the RAM is completed, the edited data (hereinafter referred to as new sector storage data) is taken out and updated by a writable data size (for example, one word). Write to the target sector. Then, it is determined whether or not all the new sector storage data has been written to the update target sector. If all the new sector storage data has not been written to the update target sector, the writing is continued, while the new sector storage data is updated to the update target sector. When all the data are written in the sector, the sector rewriting process is terminated (see Patent Document 1).
JP 2004-13536 A (Claim 1)

  In the above flash memory rewriting method, when only a part of the flash memory program is rewritten, the program code to be rewritten is copied to the RAM in 1-sector units, then edited on the RAM, and the rewritten content is flashed. It is executed by the procedure of writing back to the memory sector.

  In this procedure, as shown in FIG. 6B, the data area before rewriting in one sector is exactly the same as the data area after rewriting. For example, a predetermined value recorded in the flash memory is changed (for example, “value 1”). In the case of “change from“ 0 ”to“ value 0 ”), no problem occurs, but as shown in FIG. 6A, the entire program needs to be updated, and the data area before rewriting in one sector is If the data area is larger than the rewritten data area, there is a possibility that a part of old contents before rewriting may remain in the sector after rewriting. In this case, the firmware in the sector after rewriting does not access the data of the old contents, so it is considered that there will be no problem. However, the firmware under evaluation within the manufacturer strictly by this rewriting (no old program area) And the firmware embedded in the product (with the old program area) is not exactly the same. Therefore, if there is a program error in the firmware, the product version firmware may accidentally read the values in the old program area and cause the device to operate abnormally. There may be a situation where it cannot be said that the quality of the firmware can be ensured.

  In the present invention, even when rewriting of an area smaller than the area before rewriting is performed, the flash memory sector after rewriting does not leave the old contents before rewriting outside the rewritten new program area. An object of the present invention is to provide a method for selecting a partial flash memory rewriting method according to a necessary situation while providing a memory rewriting system, a flash memory rewriting method, and a program.

(1) Flash memory with data rewritable,
Volatile memory for temporarily storing data written to the flash memory;
A control unit for controlling the writing of the data to the flash memory,
The flash memory rewriting system, wherein the control unit selects a rewriting method of the flash memory according to a rewriting method instruction command received from a host computer.
(2) The control unit executes any one of a partial rewrite program and a batch rewrite program in accordance with the rewrite method instruction command received from the host computer, and rewrites data in the flash memory. (1) The flash memory rewriting system according to (1).
(3) The control unit expands data stored in a predetermined area in the flash memory in a data expansion area in the volatile memory according to the partial rewrite program, and the predetermined part in the flash memory. The flash memory rewriting system according to (2), wherein an area is initialized, data copied to the volatile memory is edited, and the edited data is written to the predetermined area of the flash memory.
(4) The control unit initializes a data expansion area in the volatile memory according to the batch rewrite program, initializes a predetermined area in the flash memory, and expands write data in the data expansion area. The flash memory rewriting system according to (2), wherein the write data is written to the predetermined area of the flash memory.
(5) A printer including the flash memory rewriting system according to any one of (1) to (4).
(6) An information device including the flash memory rewriting system according to any one of (1) to (4).
(7) a selection step of selecting a flash memory rewriting method according to a rewriting method instruction command received from the host computer;
A flash memory rewriting method comprising: a rewriting step of rewriting a flash memory in accordance with a selected rewriting method.
(8) In the rewriting step, in accordance with the rewriting method instruction command received from the host computer, one of partial rewriting and batch rewriting is executed to rewrite data in the nonvolatile memory. The flash memory rewriting method according to (7), characterized in that
(9) When executing the partial rewriting,
Expanding data stored in a predetermined area in the non-volatile memory into a data expansion area in the volatile memory;
Initializing the predetermined area in the nonvolatile memory;
Editing the data copied to the volatile memory;
The step of writing the edited data into the predetermined area of the non-volatile memory is executed. The flash memory rewriting method according to (8),
(10) When performing the batch rewriting,
Initializing a data expansion area in the volatile memory;
Initializing a predetermined area in the nonvolatile memory;
Expanding the write data in the data expansion area;
The step of writing the write data into the predetermined area of the nonvolatile memory is performed. The flash memory rewriting method according to (8),
(11) a selection step of selecting a flash memory rewrite method in response to a rewrite method instruction command received from the host computer;
A flash memory rewriting program that causes a computer to execute a rewriting step of rewriting a flash memory in accordance with a selected rewriting method.
(12) In the rewriting step, in accordance with the rewriting method instruction command received from the host computer, any one of partial rewriting and batch rewriting is executed to rewrite data in the nonvolatile memory. The flash memory rewriting program as set forth in (11), characterized in that
(13) When executing the partial rewriting,
Expanding data stored in a predetermined area in the non-volatile memory into a data expansion area in the volatile memory;
Initializing the predetermined area in the nonvolatile memory;
Editing the data copied to the volatile memory;
The flash memory rewriting program according to (12), which causes a computer to execute the step of writing the edited data into the predetermined area of the nonvolatile memory.
(14) When performing the batch rewriting,
Initializing a data expansion area in the volatile memory;
Initializing a predetermined area in the nonvolatile memory;
Expanding the write data in the data expansion area;
(12) The flash memory rewriting program according to (12), which causes a computer to execute the step of writing the write data into the predetermined area of the nonvolatile memory.

  According to the present invention, partial rewriting of the flash memory can be executed in a situation where partial rewriting is preferred, and batch rewriting of the flash memory can be executed in a situation where batch rewriting is preferred. In other words, when partial rewriting is performed, such as when the area after rewriting is smaller than the area before rewriting, the old contents before rewriting remain outside the new data area rewritten in the sector of the flash memory after rewriting. In such a case, batch rewriting can be performed, and in other cases, partial rewriting can be performed. As a result, it is possible to create a state in which unnecessary data does not always exist in the flash memory, and it is possible to provide a system with few malfunctions.

  Hereinafter, embodiments of a flash memory rewriting system according to the present invention will be described in detail with reference to the drawings. In the following description, a composite processing apparatus provided with a flash memory rewriting system is taken as an example, and a case of rewriting the firmware of the composite processing apparatus is illustrated.

FIG. 1 is a perspective view showing a data processing system including the composite processing apparatus of the present embodiment.
As shown in FIG. 1, the composite processing apparatus 1 according to the present embodiment conveys the check S loaded in the paper feeding unit 3 to the paper discharge unit 4 along the paper conveyance path P1 formed in the housing 1a. The card C that is the second reading medium inserted from the card insertion slot 20 is configured to be transportable along the paper transport path P2 formed in the housing 1a. Then, the composite processing apparatus 1 reads the image on the check S, conveys the check S while conveying the check S along the paper conveyance path P1, reads the magnetic character printed on the check S, and performs printing on the check S. At the same time, it is an image reading device / magnetic character reading device / printing device capable of reading an image on the card C while conveying the card C along the paper conveyance path P2. The composite processing apparatus 1 is communicably connected to the host computer 100 via a communication cable 50.

  The host computer 100 includes a main unit 100a, a display unit 103 as a display provided integrally with the main unit 100a, and an input unit 102 for an operator to perform various inputs. The host computer 100 is a control terminal that controls the composite processing apparatus 1. The composite processing apparatus 1 executes image reading, printing, magnetic character reading, and the like in accordance with various control commands transmitted from the host computer 100. Do. When rewriting the firmware, the host computer 100 transmits a firmware rewrite instruction command to the composite processing apparatus 1 and transmits new firmware data in a command format. Thereby, the composite processing apparatus 1 executes rewriting of firmware in the flash memory.

  FIG. 2 is a block diagram showing an electrical configuration of a data processing system including the composite processing apparatus 1 and the host computer 100 according to the present embodiment. FIG. 3 is a memory map showing data stored in the flash memory 63. is there.

First, the configuration of the composite processing apparatus 1 will be described.
The composite processing apparatus 1 includes a CPU 61, a RAM 62, a flash memory 63, a communication control unit 64, a conveyance control unit 65, a print control unit 66, an image reading control unit 67, and a magnetic character reading control unit 68. It is prepared for.

  The CPU 61 is a main control unit that plays a central role in controlling the composite processing apparatus 1. The CPU 61 executes the firmware written in the flash memory 63 and executes various processes for controlling the entire composite processing apparatus 1.

  The RAM 62 is a volatile memory provided as a main memory of the composite processing apparatus 1. The RAM 62 is used as a temporary data buffer for various operations of the CPU 61, a reception buffer for temporarily storing received data, a print buffer for temporarily storing print data, and the like. The RAM 62 is also used as a data temporary save / rewrite area when data is rewritten in the flash memory 63 described later.

  The flash memory 63 is a nonvolatile memory in which firmware such as a boot program and a main program executed in the composite processing apparatus 1 and various setting values used for control of the composite processing apparatus 1 are written. Even when the power is turned off, the internal data can be retained without loss.

As shown in FIG. 3, the storage area in the flash memory 63 is divided into areas called a plurality of sectors. In the example of this embodiment, the “boot program area” that stores the boot program for executing the startup processing of the composite processing apparatus 1 in the sector 10 performs various operations of the composite processing apparatus 1 after the startup processing in the sectors 7 and 8. A “main program area” for storing a main program to be controlled and a “data area” for storing various setting values are allocated to the sector 9.
The flash memory 63 can erase and write data only in units of sectors. A specific method for rewriting data in the flash memory 63 will be described later.

  The communication control unit 64 is a control unit that controls communication with the host computer 100. Various commands transmitted from the host computer 100 are received via the communication control unit 64 and stored in a reception buffer in the RAM 62. Further, status signals indicating various situations in the composite processing apparatus 1 are transmitted to the host computer 100 via the communication control unit 64.

  The conveyance control unit 65 is a control unit that controls the conveyance operation of the check S in the paper conveyance path P1 and the conveyance operation of the card C in the paper conveyance path P2. Specifically, the conveyance control unit 65 drives a stepping motor (not shown) according to the detection result of a paper detector (not shown) to rotationally drive the conveyance rollers arranged along the paper conveyance paths P1 and P2. By doing so, the check S and the card C are conveyed.

  The print control unit 66 is a control unit that drives a print head provided in the housing 1a. The composite processing apparatus 1 is provided with an ink jet type print head, and controls the amount of ink discharged from the print head, the discharge timing, and the like based on print data received from the host computer 100.

  The image reading control unit 67 is a control unit that controls image reading sensors (scanners) provided along the sheet conveyance paths P <b> 1 and P <b> 2 of the composite processing apparatus 1. In response to an instruction from the image reading control unit 67, the image reading sensor irradiates the check S or card C conveyed on the paper conveyance paths P1 and P2 with reading light, receives the reflected light, and receives the check S or The image data of the card C is acquired.

  The magnetic character reading control unit 68 is a control unit that controls the operation of a MICR (Magnet Ink Character Reader) provided along the paper transport path P1 of the composite processing apparatus 1. The MICR reads magnetic characters printed with magnetic ink on the check S conveyed along the paper conveyance path P1 in accordance with an instruction from the magnetic character reading control unit 68, and acquires magnetic character data.

Next, the configuration of the host computer 100 will be described.
The host computer 100 includes a main control unit 101, an input unit 102, a display unit 103, a communication control unit 104, and a data holding unit 105.

  The main control unit 101 is a control center of the host computer 100 including a CPU, a RAM, a ROM, and other various controllers, and controls operations of the input unit 102, the display unit 103, the communication control unit 104, and the data holding unit 105. . The main control unit 101 executes various programs to generate various commands for controlling the composite processing apparatus 1 and controls the composite processing apparatus 1.

  The input unit 102 is a man-machine interface for an operator to input various data, and can be configured from a keyboard, various input devices, and the like. The display unit 103 is configured by a display device such as a liquid crystal and notifies the operator of visual information.

  The communication control unit 104 is a control unit that controls communication with the composite processing apparatus 1. Various commands generated by the main control unit 101 are transmitted to the composite processing apparatus 1 via the communication control unit 104. Also, status signals indicating various situations in the composite processing apparatus 1 are received from the composite processing apparatus 1 via the communication control unit 104.

  The data holding unit 105 is configured as a data storage area of the host computer 100. In the present embodiment, the following description will be given on the assumption that the rewrite data in the flash memory 63 is stored in the data holding unit 105.

  Next, rewriting of the flash memory 1 of the composite processing apparatus 1 in this embodiment will be described. Here, a command for selecting a rewriting method of the flash memory 1 will be described first.

The host computer 100 of the present embodiment is configured to be able to transmit a rewrite method selection command for designating a rewrite method of the flash memory 63 to the composite processing apparatus 1. Examples of the format of the rewrite method selection command include the following.

ESC 100 n (1)

  In Expression (1), “ESC” indicates the type of command system, and the argument “100” indicates the type of command in this ESC command system. Here, the command in Expression (1) specifies the flash memory rewriting method. Indicates a command. N is a factor indicating the rewrite method. For example, when “n = 0”, this command designates partial rewrite of the flash memory, and when “n = 1” designates batch rewrite of the flash memory. Is meant to be.

  4A and 4B are schematic diagrams schematically showing a rewriting method of the flash memory 63, where FIG. 4A shows partial rewriting of the sector n of the flash memory, and FIG. 4B shows batch rewriting of the sector n of the flash memory. .

First, partial rewriting of a flash memory will be described with reference to FIG.
“Partial rewriting of flash memory” refers to a process of rewriting only a part of data in sector n of the flash memory 63. In this partial rewriting, the CPU 61 executes processing by executing a flash memory rewriting program written in, for example, a boot program area in the flash memory 63.

  Specifically, with reference to FIG. 4A, in this partial rewriting, first, all the data in the sector n in the flash memory 63 to be rewritten is copied to the data development area in the RAM 62 (steps). S1).

When all data in sector n is copied to the data expansion area in RAM 62, all data X in sector n is expanded in RAM 62 corresponding to the address in flash memory 63. Then, the rewriting is executed by replacing the data in the rewriting area Y to be partially rewritten with the new data among all the data X, and the data Z of the sector n in which the rewriting area Y is rewritten is generated (step S2). .
When performing this partial rewriting, the size of the rewriting area Y must not change before and after rewriting.

Next, initialization processing is performed on the sector n in the flash memory 63, and the data in the sector n is batch erased (for example, a state in which nothing is written at all addresses = 0xFF is written) (Step S3). Then, the data Z of the sector n after rewriting developed in the RAM 62 is written into the sector n of the flash memory 63 and recorded in the sector n, whereby the partial rewriting of the flash memory is completed (step S4). ).
The above is the flow of “partial rewriting of flash memory”. This partial rewriting of the flash memory is performed by, for example, changing the predetermined area recorded in the flash memory (for example, changing from “value 1” to “value 0”) before and after rewriting, and the size of the rewriting area Y It can be suitably applied to a situation where no change occurs.

Next, batch rewriting of the flash memory will be described with reference to FIG.
“Batch rewriting of flash memory” refers to the flash memory 63 without copying data from the flash memory 63 to the RAM 62 in the flow of “partial rewriting of flash memory” described with reference to FIG. The process of erasing all data in sector n and writing completely new data into sector n. Even in this batch rewriting, processing is performed by the CPU 61 executing a flash memory rewriting program written in, for example, a boot program area in the flash memory 63.

  Specifically, referring to FIG. 4B, in this batch rewriting, first, a data expansion area in the RAM 62 where data to be written to the sector n of the flash memory 63 is to be expanded is initialized, A state where there is no data in the data development area (for example, a state where nothing is written to all addresses = 0xFF is written) (step S11).

When the data expansion area of the RAM 62 is initialized, the data W to be written in the sector n is written in the data expansion area that has been initialized, and is expanded in accordance with the address in the sector n (step S12). ). Then, the initialization process is performed on the sector n in the flash memory 63, and the data in the sector n is erased at once (for example, the state where nothing is written to all addresses = 0xFF is written) (Step S13). Then, the data W developed in the RAM 62 is written in the sector n of the flash memory 63 and recorded in the sector n, whereby the batch rewriting of the flash memory is completed (step S14).
The above is the “flash memory batch rewrite” flow. This batch rewriting of the flash memory can be suitably applied in a situation where the amount of data in the sector n changes before and after rewriting in the flash memory, such as rewriting at the time of complete update over the entire program. .

  In the present embodiment, in consideration of the characteristics of partial rewriting and batch rewriting of the flash memory, the host computer 100 transmits a rewriting method selection command to the multi-processing device 1 and performs a rewriting method of the flash memory in the multi-processing device 1. I try to change it. If the composite processing apparatus 1 receives the rewrite method selection command and analyzes the command, if partial rewrite is instructed, for example, the rewrite program corresponding to the partial rewrite is executed in the RAM 62, while batch rewrite is performed. Is instructed, a rewriting method is selected by executing a rewriting program corresponding to batch rewriting in the RAM 62.

Next, an overall flow of rewriting of the flash memory will be described.
FIG. 5 is a flowchart showing an overall flow of rewriting of the flash memory according to the present embodiment.

  First, for example, when the operator inputs an instruction to rewrite the flash memory 63 of the composite processing apparatus 100 via the input unit 102, the host computer 100 transmits a flash memory rewrite command to the composite processing apparatus 1 to rewrite the flash memory 63. An instruction to shift to the mode is given (step S21).

  When the composite processing apparatus 1 receives the flash memory rewrite command from the host computer 100 (step S22), the composite processing apparatus 1 is restarted to initialize the CPU, RAM, etc., and the flash memory rewrite program is loaded from the boot program area. The data is read to shift to the flash memory rewrite mode and notify the host computer 100 to the flash memory rewrite mode of the completion of the shift (step S23).

  When the composite processing apparatus 1 shifts to the flash memory rewrite mode, the host computer 100 first transmits a rewrite method instruction command to the composite processing apparatus 1 to instruct partial rewrite or batch rewrite as the rewrite method of the flash memory 63. (Step S24). Then, upon receiving the rewrite method instruction command (step S25), the composite processing apparatus 1 executes a rewrite program of the flash memory 63 according to the rewrite method instruction command (step S26).

If the rewrite method instruction command indicates partial rewrite, the partial rewrite program is executed, and the flash as shown in FIG. 4A is executed based on the rewrite data transmitted from the host computer 100 in step S27. Data in the memory 63 is partially rewritten for each sector instructed to rewrite (step S28).
On the other hand, if the rewrite method instruction command instructs batch rewrite, the batch rewrite program is executed, and the flash memory as shown in FIG. 4B is executed based on the rewrite data transmitted from the host computer 100 in step S27. The 63 data is rewritten at once for each sector instructed to rewrite (step S29).

In step S28 and step S29, when the rewriting of the flash memory 63 is completed, the termination processing is performed, and the composite processing apparatus 1 is reset and restarted (step S30). Thereby, the data in the flash memory 63 of the composite processing apparatus 1 is rewritten, and after the rewriting, the composite processing apparatus 1 operates based on the rewritten data in the flash memory 63.
The above is the flow of flash memory rewriting in the present embodiment.

  As described above, the composite processing apparatus 1 according to the present embodiment has the data rewritable flash memory 63, the RAM 62 that temporarily stores data to be written to the flash memory 63, and the writing of data to the flash memory 63. The CPU 61 selects a flash memory 63 rewrite method in response to a rewrite method instruction command received from the host computer 100.

  Specifically, the CPU 61 rewrites data in the flash memory 63 by executing one of the partial rewrite program and the batch rewrite program in response to a rewrite method instruction command received from the host computer 100.

  Specifically, when the partial rewriting program is executed, the CPU 61 expands data stored in a predetermined area in the flash memory 63 into a data expansion area in the RAM 62 and then stores the predetermined data in the flash memory 62. The area is initialized, the data developed in the RAM 62 is edited, and the edited data is written in a predetermined area of the flash memory 63.

  When the batch rewrite program is executed, the CPU 61 initializes the data expansion area in the RAM 62, initializes a predetermined area in the flash memory 63, expands write data in the data expansion area, and stores the write data. Write to a predetermined area of the flash memory 63.

  According to the present embodiment, in a situation where partial rewriting is preferred, the composite processing device 1 is caused to execute partial rewriting of the flash memory 63, and in a situation where batch rewriting is preferred, the composite processing device 1 is allowed to execute flash memory. 63 batch rewriting can be executed. For example, when partial rewriting is performed, such as when the area after rewriting is smaller than the area before rewriting, the old contents before rewriting remain outside the new program area rewritten in the sector of the flash memory after rewriting. In such a case, batch rewriting can be performed, and in other cases, partial rewriting can be performed.

  Therefore, for example, in the case where an increase or decrease in data in the flash memory is expected, such as rewriting at the time of a complete update over the entire program in the flash memory 63, the rewrite can be performed by causing the composite processing apparatus 1 to select batch rewriting. As a result, the data structure as intended by the manufacturer can be built in the flash memory 63 without any program before rewriting remaining in the sector. Accordingly, it is possible to provide the composite processing apparatus 1 in which a part of the program before the rewriting is executed by executing the program after the rewriting due to an unintended program error or the like, and no problem such as a malfunction occurs. It becomes.

  On the other hand, when rewriting a certain setting value in the flash memory 63 does not affect other areas, the program can be rewritten by selecting partial rewriting. In the case of partial rewriting, the amount of data transferred from the host computer 100 to the composite processing apparatus can be reduced, so that data rewriting in the flash memory 63 can be executed quickly.

  In addition, the host computer 100 generates a rewrite method instruction command for instructing a rewrite method so that an unnecessary program does not remain in the flash memory 63, and the data in the flash memory 63 is transferred according to the rewrite method instruction command. By configuring so that rewriting is performed, if the rewriting history in the flash memory 63 is held, it is possible to completely grasp the current state in the flash memory 63. Therefore, even if the number of times the flash memory 63 is rewritten increases, rewriting is performed so that unnecessary data does not exist in the flash memory 63, always considering the state in the flash memory 63, and stable operation is always realized. A possible data state can be established in the flash memory 63.

  In this embodiment, the composite processing apparatus 1 having a printing function, an image reading function, and a magnetic character reading function has been described as an example. However, the present invention is not limited to this, and a printer having only a printing function. The present invention may be applied to a scanner having only an image reading function, a MICR apparatus having only a magnetic character reading function, and other various information devices having a flash memory.

1 is a perspective view showing a data processing system including a composite processing apparatus according to the present invention. It is a block diagram which shows the electric constitution of the data processing system provided with the compound processing apparatus and the host computer. It is a memory map which shows the data preserve | saved in flash memory. 2A and 2B are schematic diagrams schematically showing a flash memory rewriting method, in which FIG. 1A shows partial rewriting of a sector n of the flash memory and FIG. 2B shows batch rewriting of the sector n of the flash memory. It is a flowchart which shows the whole flow of rewriting of flash memory. It is a schematic diagram which shows the mode of rewriting of flash memory.

Explanation of symbols

1 .. Complex processing device 61... CPU 62... RAM 63 .. Flash memory 64 .. Communication control unit 65 .. Conveyance control unit 66 .. Print control unit 67 .. Image reading control unit 68. Control unit 100... Host computer 101.. Main control unit 102.. Input unit 103.. Display unit 104 .. Communication control unit 105.

Claims (14)

Data rewritable flash memory,
Volatile memory for temporarily storing data written to the flash memory;
A control unit for controlling the writing of the data to the flash memory,
The flash memory rewriting system, wherein the control unit selects a rewriting method of the flash memory according to a rewriting method instruction command received from a host computer.   The control unit rewrites data in the flash memory by executing one of a partial rewrite program and a batch rewrite program in response to the rewrite method instruction command received from the host computer. The flash memory rewriting system according to claim 1.   The control unit expands data stored in a predetermined area in the flash memory to a data expansion area in the volatile memory according to the partial rewrite program, and initializes the predetermined area in the flash memory. 3. The flash memory rewriting system according to claim 2, wherein the data copied to the volatile memory is edited, and the edited data is written to the predetermined area of the flash memory.   The control unit initializes a data expansion area in the volatile memory according to the batch rewrite program, initializes a predetermined area in the flash memory, expands write data in the data expansion area, and writes the write data 3. The flash memory rewriting system according to claim 2, wherein data is written to the predetermined area of the flash memory.   A printer comprising the flash memory rewriting system according to claim 1.   An information device comprising the flash memory rewriting system according to claim 1. A selection step of selecting a flash memory rewriting method according to a rewriting method instruction command received from the host computer;
A flash memory rewriting method comprising: a rewriting step of rewriting a flash memory in accordance with a selected rewriting method.   In the rewriting step, in accordance with the rewriting method instruction command received from the host computer, any one of partial rewriting and batch rewriting is executed to rewrite data in the nonvolatile memory. The flash memory rewriting method according to claim 7. When performing the partial rewriting,
Expanding data stored in a predetermined area in the non-volatile memory into a data expansion area in the volatile memory;
Initializing the predetermined area in the nonvolatile memory;
Editing the data copied to the volatile memory;
The flash memory rewriting method according to claim 8, further comprising: writing the edited data in the predetermined area of the nonvolatile memory. When performing the batch rewriting,
Initializing a data expansion area in the volatile memory;
Initializing a predetermined area in the nonvolatile memory;
Expanding the write data in the data expansion area;
9. The flash memory rewriting method according to claim 8, wherein the step of writing the write data into the predetermined area of the nonvolatile memory is performed. A selection step of selecting a flash memory rewriting method according to a rewriting method instruction command received from the host computer;
A flash memory rewriting program that causes a computer to execute a rewriting step of rewriting a flash memory in accordance with a selected rewriting method.   In the rewriting step, according to the rewriting method instruction command received from the host computer, one of partial rewriting and batch rewriting is executed to rewrite data in the nonvolatile memory. The flash memory rewriting program according to claim 11. When performing the partial rewriting,
Expanding data stored in a predetermined area in the non-volatile memory into a data expansion area in the volatile memory;
Initializing the predetermined area in the nonvolatile memory;
Editing the data copied to the volatile memory;
13. The flash memory rewriting program according to claim 12, further comprising: causing a computer to execute the step of writing the edited data into the predetermined area of the nonvolatile memory. When performing the batch rewriting,
Initializing a data expansion area in the volatile memory;
Initializing a predetermined area in the nonvolatile memory;
Expanding the write data in the data expansion area;
13. The flash memory rewriting program according to claim 12, further comprising: causing a computer to execute the step of writing the write data into the predetermined area of the nonvolatile memory.