JP2005288648A - Foreign matter sensing method for double-side polishing device - Google Patents

Foreign matter sensing method for double-side polishing device Download PDF

Info

Publication number
JP2005288648A
JP2005288648A JP2004109610A JP2004109610A JP2005288648A JP 2005288648 A JP2005288648 A JP 2005288648A JP 2004109610 A JP2004109610 A JP 2004109610A JP 2004109610 A JP2004109610 A JP 2004109610A JP 2005288648 A JP2005288648 A JP 2005288648A
Authority
JP
Japan
Prior art keywords
polishing
carrier
surface plate
double
work
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004109610A
Other languages
Japanese (ja)
Inventor
Tomonori Miura
友紀 三浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2004109610A priority Critical patent/JP2005288648A/en
Publication of JP2005288648A publication Critical patent/JP2005288648A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method to work with a double-side polishing device used in polishing etc., for example, of a semiconductor wafer, capable of sensing whether a work and a carrier to be carried to outside a platen has been carried out certainly. <P>SOLUTION: The polishing device is configured so that the work inserted to and held by the carrier is interposed between an upper 1 and a lower rotary platen 2 whereto polishing pads 3 are affixed and the obverse and reverse surfaces of the work are polished simultaneously while slurry is supplied onto the pads 3, wherein a foreign matter sensing method to work with this polishing device is to put the rotary platens 1 and 2 in tight attachment after the work and carrier having finished polishing are carried out from upon the platens. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、例えば半導体ウェーハのポリッシング等に使用される両面研磨装置に関し、特に研磨終了後、ワーク及びキャリアを定盤の外へ搬出する際に確実に搬出されたかどうかを検出するための方法に関する。   The present invention relates to a double-side polishing apparatus used, for example, for polishing a semiconductor wafer, and more particularly to a method for detecting whether or not a workpiece and a carrier are reliably unloaded when the workpiece and a carrier are unloaded from the surface plate after polishing. .

半導体デバイスの素材であるシリコンウェーハは、シリコン単結晶から切り出された後にラッピングまたは/及び研削を受け、更にポリッシングと呼ばれる研磨処理を受ける。この研磨処理を行う研磨装置としては遊星歯車形式の両面研磨装置が多用されている。この形式の両面研磨装置の概略構造を図2(a)及び図2(b)により説明する。尚、図2(b)は図2(a)のB−B線矢示図である。   A silicon wafer, which is a material of a semiconductor device, is cut out from a silicon single crystal, is subjected to lapping or / and grinding, and is further subjected to a polishing process called polishing. As a polishing apparatus for performing this polishing process, a planetary gear type double-side polishing apparatus is frequently used. A schematic structure of a double-side polishing apparatus of this type will be described with reference to FIGS. 2 (a) and 2 (b). FIG. 2B is a view taken along line B-B in FIG.

遊星歯車形式の両面研磨装置は、研磨盤としてポリウレタン系、硬質ゴム系等の研磨パット3を貼り付けた上下一対の回転定盤1、2と、回転定盤1、2間の回転中心部周囲に遊星歯車として配置された複数のキャリア4、4・・と、回転定盤1、2間回転中心部に配置された太陽ギヤ5と、回転定盤1、2間の外周部配置されたインターナルギヤ6とを備えている。   The planetary gear type double-side polishing apparatus is composed of a pair of upper and lower rotating surface plates 1 and 2 with a polishing pad 3 made of polyurethane, hard rubber or the like as the polishing plate, and the rotation center portion between the rotating surface plates 1 and 2 A plurality of carriers 4, 4... Arranged as planetary gears, a sun gear 5 disposed at the center of rotation between the rotating surface plates 1 and 2, and an outer peripheral portion disposed between the rotating surface plates 1 and 2. And a null gear 6.

上側の回転定盤1は昇降可能であり、複数のキャリア4、4・・を挟んで下側の回転定盤2上に所定の加重で載置される。各キャリア4は、ワークであるシリコン等のウェーハ7を偏心して保持する。太陽ギヤ5及びインターナルギア6は複数のキャリア4、4・・に内側及び外側から噛み合い、通常は下側の回転定盤2と同方向に回転駆動される。なお、上側の回転定盤1の回転方向は、下側の回転定盤2の回転方向と反対である。   The upper rotary platen 1 can be moved up and down, and is placed on the lower rotary platen 2 with a predetermined weight with a plurality of carriers 4, 4. Each carrier 4 holds a wafer 7 such as silicon, which is a workpiece, eccentrically. The sun gear 5 and the internal gear 6 mesh with the plurality of carriers 4, 4... From the inside and the outside, and are normally driven to rotate in the same direction as the lower rotating platen 2. The rotation direction of the upper rotary platen 1 is opposite to the rotation direction of the lower rotary platen 2.

上側の回転定盤1を上昇させた状態で、下側の回転定盤2上に複数のキャリア4、4・・を載せ、各キャリア4のキャリアホール8にウェーハ7をセットした後、回転定盤1を下降させる。この状態で回転定盤1、2、太陽ギヤ5及びインターナルギヤ6を回転駆動することにより、複数のキャリア4、4・・は、逆方向に回転する回転定盤1、2間で自転しつつ太陽ギヤ5の回りを公転する。これにより、複数枚のウェーハ7、7・・の両面が同時に均一研磨される。   With the upper rotary platen 1 raised, a plurality of carriers 4, 4... Are placed on the lower rotary platen 2 and the wafer 7 is set in the carrier hole 8 of each carrier 4. Board 1 is lowered. In this state, by rotating and driving the rotating surface plates 1, 2, the sun gear 5 and the internal gear 6, the plurality of carriers 4, 4... Rotate between the rotating surface plates 1, 2 rotating in the opposite direction. While revolving around the sun gear 5. Thereby, both surfaces of the plurality of wafers 7, 7,... Are uniformly polished simultaneously.

また、特許文献1においては、シリコンウェーハの大口径化に伴い上記のような遊星歯車形式の両面研磨装置ではキャリアが大きくなり、装置規模が増大(特にインターナルギヤが大型化)することによる製作コストの高騰及び研磨精度の低下、又は大型のインターナルギヤが金属でしか形成されないため、キャリアとの噛み合いによる金属粉発生に伴うウェーハへの汚染などを抑えるために、インターナルギヤを排除し、各キャリアを定位置で小型の歯車により自転させる方式の両面研磨装置が提案されている。   Further, in Patent Document 1, as the silicon wafer has a larger diameter, the planetary gear type double-side polishing apparatus as described above has a larger carrier, and the scale of the apparatus increases (especially, the internal gear becomes larger). Since the cost increases and polishing accuracy decreases, or the large internal gear is formed only of metal, in order to suppress contamination of the wafer due to metal powder generation due to meshing with the carrier, the internal gear is eliminated, There has been proposed a double-side polishing apparatus in which each carrier is rotated at a fixed position by a small gear.

特開2000−237953号公報JP 2000-237953 A

上述した両面研磨装置において、研磨終了後ウェーハ及びキャリアを定盤外へ搬出する際に、確実に行われずにウェーハやキャリア及びこれらの破損片が定盤上に残留してしまい、次バッチの研磨が正常に行われないことがある。この原因は、定盤上への搬入出用のハンドラーがウェーハ全体を吸着するものではなく、例えばウェーハが半分に割れた場合はそのまま続行されることになる。また、ハンドラーの取り損ね検出は、あくまでも吸盤の真空到達度で判断されるため、水がたくさんのっているウェーハ吸着の真空度のバラツキは大きく信頼性が低いからである。従って、定盤上にそのような異物が残留した状態で次バッチの加工が行われれば、加工中にウェーハがキャリアより離脱して全てのウェーハ、キャリアが破損してしまい生産に致命的な被害を及ぼしたり、そこまで行かずとも、微少な破片によるウェーハへのギス導入等の問題が発生してしまう。特に自動搬送にて無人操業を行う装置については、オペレーターによる確認ができないため事態は深刻である。   In the above-described double-side polishing apparatus, when the wafer and carrier are carried out of the surface plate after the polishing is completed, the wafer, the carrier, and their broken pieces remain on the surface plate without being reliably performed, and the next batch is polished. May not be performed properly. This is because the handler for loading and unloading onto the surface plate does not attract the entire wafer, and for example, when the wafer is broken in half, it is continued as it is. Further, since the detection of the removal of the handler is determined based on the suction level of the suction cup to the last, the variation in the degree of vacuum of the wafer adsorption with a lot of water is large and the reliability is low. Therefore, if the next batch is processed with such foreign matter remaining on the surface plate, the wafer will be detached from the carrier during processing and all the wafers and the carrier will be damaged, resulting in fatal damage to production. However, even if it does not go so far, problems such as introduction of grease into the wafer due to minute fragments will occur. The situation is particularly serious for devices that perform unattended operations by automatic transport because they cannot be confirmed by the operator.

これらを改善するために、両面研磨装置には次バッチの加工前にウェーハ及びキャリアを載せた状態で一度上下回転定盤を密着させて、定盤原点(上下定盤密着状態)からの変位量を上定盤に装備しているリニアゲージにて計測する方法が行われており、その際の変位量は、基本的にウェーハが一番厚いためウェーハの厚みとなるが、意図的に加工前のウェーハよりも厚いキャリアを使う場合もあるため、その際はキャリアの厚みとなり、その変位量が所定の範囲に入っていないと加工を自動スタートしないインターロックを装備している。   In order to improve these problems, the double-side polishing machine is placed in close contact with the vertical rotating surface plate with the wafer and carrier mounted before processing the next batch, and the displacement from the surface plate origin (upper and lower surface plate contact state) Is measured with a linear gauge equipped on the upper surface plate, and the displacement amount at that time is basically the thickness of the wafer because it is the thickest, but intentionally before processing In some cases, a carrier thicker than that of the wafer is used. In this case, the thickness of the carrier is used, and an interlock is provided that does not automatically start processing unless the amount of displacement is within a predetermined range.

しかし、この変位量は研磨パット等の資材消耗量及びウェーハの加工前厚み又は回転定盤の熱膨張によるたわみ等で容易に変化してしまうために、安定して装置を稼働させるためにはどうしてもインターロックの範囲を広くする必要があった。また、回転定盤上の異物の上に次バッチのウェーハもしくはキャリアがセットされなければ、この方法では異物が検出されないという問題があった。   However, this amount of displacement is easily changed by the amount of material consumption of the polishing pad, the thickness before processing of the wafer, or the deflection due to the thermal expansion of the rotating surface plate. It was necessary to widen the range of interlock. In addition, there is a problem that the foreign matter is not detected by this method unless the wafer or carrier of the next batch is set on the foreign matter on the rotating surface plate.

本発明は、このような上記問題点に鑑みてなされたものであって、研磨終了後にウェーハやキャリア及びそれらの破片等の異物の有無を感度良く検出することにより、次バッチ以降の装置の安定稼働及びキズの発生を低減させることを目的としている。   The present invention has been made in view of the above-described problems, and by detecting the presence or absence of foreign matters such as wafers, carriers and fragments thereof after the completion of polishing, it is possible to stabilize the apparatus after the next batch. The purpose is to reduce operation and generation of scratches.

請求項1に記載の発明は、研磨パットを貼り付けた上下一対の回転定盤間に、キャリアに挿入保持されたワークを介在させ、スラリーを前記パット上に供給しながらワークの表裏面を同時に研磨する研磨装置において、研磨終了後にワーク及びキャリアを定盤上から搬出した後、上下回転定盤を密着させることを特徴とする両面研磨装置の異物検出方法である。   According to the first aspect of the present invention, a work inserted and held in a carrier is interposed between a pair of upper and lower rotating surface plates to which a polishing pad is attached, and the front and back surfaces of the work are simultaneously applied while supplying slurry onto the pad. In the polishing apparatus for polishing, the foreign object detection method of the double-side polishing apparatus, wherein after the workpiece and the carrier are unloaded from the surface plate after the polishing is finished, the vertical rotation surface plate is brought into close contact.

このように、研磨終了後にワーク及びキャリアを回転定盤上から排出した段階、言い換えれば回転定盤(研磨パット)上に基本的に何も存在しない状態で上下回転定盤を密着させ、定盤位置検出手段として例えばリニアゲージによる変位量を測定することにより、原点からのズレ量が許容範囲内にあるかどうかの判断を自動的に行うようにしたことにより、定盤上の異物が確実に且つセンサー等の高コスト検出器を用いることなく検出できるようになった。   In this way, when the workpiece and carrier are discharged from the rotating surface plate after polishing, in other words, the surface platen is brought into close contact with the rotating surface plate (polishing pad) in a state where nothing basically exists. For example, by measuring the amount of displacement with a linear gauge as a position detection means, it is possible to automatically determine whether the amount of deviation from the origin is within the allowable range. Moreover, it has become possible to detect without using a high-cost detector such as a sensor.

また、上下回転定盤を密着させた際、同時に上定盤位置の原点出しを行うことを特徴とする両面研磨装置の異物検出方法であるが、具体的には自動判定に用いる定盤変位量(原点位置)は、主に研磨パット消耗量や定盤の熱膨張によるたわみ等の影響により経時的にこの値は変化してしまう。これに対応するために異物が検出されなかった場合にその時点の密着状態を原点としてリセットするものである。   In addition, it is a foreign object detection method for a double-side polishing machine characterized in that when the vertical rotating surface plate is brought into close contact, the origin of the upper surface plate position is detected at the same time. The value of (origin position) changes over time mainly due to the influence of the polishing pad wear amount and the deflection due to thermal expansion of the surface plate. In order to cope with this, when no foreign object is detected, the contact state at that time is reset as the origin.

研磨パットとしては、ポリウレタン系、硬質ゴム系等があり、スラリーとしては、コロイダルシリカ含有アルカリ溶液等を用いれば良い。
また、上下回転定盤を密着することによりウェーハやキャリア又はそれらの破片等の異物を検出するものであり、その際の上定盤位置を検出するものとしては、従来技術同様リニアゲージ等を用いて行うものであるが、定盤の位置が検出されればこれに限定されるものではない。
Examples of the polishing pad include polyurethane and hard rubber, and the slurry may be a colloidal silica-containing alkaline solution.
In addition, it detects foreign matter such as wafers, carriers, or fragments of them by bringing the vertical rotating surface plate into close contact, and as it detects the upper surface plate position at that time, a linear gauge or the like is used as in the prior art. However, the present invention is not limited to this as long as the position of the surface plate is detected.

これらの方法は、できれば研磨終了後のワークを回収する毎に毎回行うことが望まれるが、生産性等を考慮すれば数バッチに1回の実施でも良く適宜設定すれば良い。また、これら一連の動作は異常が検出されるまで完全自動稼働とし、異常発生時にはオペレーターコールを行いここで初めてオペレーターが介入するシステムとした。   These methods are desirably performed every time the workpiece after polishing is collected, if possible. However, in consideration of productivity and the like, it may be performed once in several batches and may be set as appropriate. These series of operations are fully automatic until an abnormality is detected, and when an abnormality occurs, an operator call is made and this is the first system in which the operator intervenes.

本発明によれば、研磨終了後にウェーハやキャリア及びそれらの破片等の異物の有無を感度良く検出することができ、加工中にウェーハがキャリアより離脱して全てのウェーハ、キャリアが破損してしまい生産に致命的な被害を及ぼしたり、微少な破片によるウェーハへのギス導入等の問題を発生させることが無くなり、特に自動搬送にて無人操業を行うための安定稼働させることが可能となる。   According to the present invention, it is possible to detect the presence or absence of a foreign substance such as a wafer, a carrier, and fragments thereof after polishing, and the wafer is detached from the carrier during processing, and all the wafers and the carrier are damaged. There will be no fatal damage to production or problems such as the introduction of grease into the wafer due to minute debris, and stable operation for unmanned operation with automatic transfer will be possible.

以下、本発明に係わる両面研磨装置の実施の形態を図1(a)及び図1(b)を用いて説明する。尚、図1に関してはワークとしてのウェーハやそれを保持するためのキャリアは加工された後、定盤上から排出されている状態を示しているもので、上下回転定盤の位置関係及び上定盤位置計測手段として用いたリニアゲージ9が最低限分かればよく簡略されたものとなっており、その他の回転機構等については基本的に図2及び特許文献1と同じものである。尚、上回転定盤位置を検出するためのリニアゲージ9は、図示されていない装置本体のフレームに固定され、上回転定盤に設けられている接点10に当接するように設置されており、上回転定盤の上下の動きに対し原点(上下回転定盤密着時)からの距離を細かく計測できるようになっている。尚、リニアゲージは別途図示されていない制御系へ接続されている。   Hereinafter, an embodiment of a double-side polishing apparatus according to the present invention will be described with reference to FIGS. 1 (a) and 1 (b). Note that FIG. 1 shows a state in which the wafer as a workpiece and the carrier for holding the workpiece are discharged from the surface plate after being processed. The linear gauge 9 used as the panel position measuring means is simplified as long as it is known at a minimum. The other rotating mechanisms and the like are basically the same as those in FIG. The linear gauge 9 for detecting the position of the upper rotating surface plate is fixed to the frame of the apparatus main body (not shown) and is installed so as to contact the contact 10 provided on the upper rotating surface plate. The distance from the origin (at the time of close contact with the vertical rotating surface plate) can be measured finely with respect to the vertical movement of the upper rotating surface plate. The linear gauge is connected to a control system not shown separately.

図1(a)は本発明における研磨パット3を貼り付けた上下一対の回転定盤1、2において、上回転定盤1が上限位置まで上昇している状態を示しているもので、図1(b)は上回転定盤1及び下回転定盤2の間の異物を検出するために上下回転定盤1、2を密着させた状態を示している。この時のリニアゲージ9の値は、上下回転定盤間にウェーハのかけ割れ等の異物が存在していなければ、前回のバッチ処理時に原点出しを行っているために0±10μmを示している。   FIG. 1A shows a state in which the upper rotating surface plate 1 is raised to the upper limit position in the pair of upper and lower rotating surface plates 1 and 2 to which the polishing pad 3 of the present invention is attached. (B) shows a state in which the vertical rotating surface plates 1 and 2 are brought into close contact with each other in order to detect foreign matter between the upper rotating surface plate 1 and the lower rotating surface plate 2. The value of the linear gauge 9 at this time is 0 ± 10 μm because the origin is determined at the previous batch processing if there is no foreign matter such as a wafer crack between the vertical rotating surface plates. .

本発明と従来技術とを用いて、それぞれ直径200mmのラッピング、エッチング等の両面研磨に投入されるための必要な加工が施されたウェーハを、それぞれ約1800バッチ加工してみた。その結果をオペレーターの介入率及びキズ発生率で表したものを以下に示す。尚、この時のインターロックの範囲を誤動作防止の理由から、若干安全を見てリニアゲージ8の測定結果から得られる変位量の30μm以上の範囲に設定した。   Using the present invention and the prior art, about 1800 batches of wafers each having a diameter of 200 mm and subjected to processing necessary for double-side polishing such as lapping and etching were tried. The results are shown below in terms of operator intervention rate and scratch rate. Note that the interlock range at this time was set to a range of 30 μm or more of the displacement obtained from the measurement result of the linear gauge 8 with some safety, for the purpose of preventing malfunction.

その結果、従来技術による方法では、オペレーター介入率0.8%、キズ発生率4.0%だったのに対し、本発明によるものは、オペレーター介入率0.5%、キズ発生率2.0%となった。また、更に上下回転定盤1、2を密着させた際に、同時に上定盤位置の原点出し(ゼロリセット)を行ったところ、オペレーター介入率0.08%、キズ発生率0.5%となり、非常に良好な結果となった。   As a result, in the method according to the prior art, the operator intervention rate was 0.8% and the scratch occurrence rate was 4.0%, whereas in the method according to the present invention, the operator intervention rate was 0.5% and the scratch occurrence rate was 2.0%. %. In addition, when the upper and lower rotating surface plates 1 and 2 are brought into close contact with each other, the origin of the upper surface plate position is simultaneously reset (zero reset), resulting in an operator intervention rate of 0.08% and a scratch rate of 0.5%. With very good results.

(a)本発明の両面研磨装置の上回転定盤が上昇した際の概略構成図、(b)本発明の両面研磨装置の上下回転定盤を密着した際の概略構成図である。(A) It is a schematic block diagram when the upper rotating surface plate of the double-side polishing apparatus of this invention raises, (b) It is a schematic block diagram when the vertical rotation surface plate of the double-side polishing apparatus of this invention closely_contact | adhered. (a)従来の両面研磨装置の概略構成図、(b)図2(a)のB−B線矢示図である。(A) The schematic block diagram of the conventional double-side polish apparatus, (b) It is a BB line arrow figure of Fig.2 (a).

符号の説明Explanation of symbols

1 上回転定盤
2 下回転定盤
3 研磨パット
4 キャリア
5 太陽ギヤ
6 インターナルギヤ
7 ワーク
8 キャリアホール
9 リニアゲージ
10接点
1 Upper rotating surface plate 2 Lower rotating surface plate 3 Polishing pad 4 Carrier 5 Sun gear 6 Internal gear 7 Work 8 Carrier hole 9 Linear gauge 10 contacts

Claims (2)

研磨パットを貼り付けた上下一対の回転定盤間に、キャリアに挿入保持されたワークを介在させ、スラリーを前記パット上に供給しながらワークの表裏面を同時に研磨する研磨装置において、研磨終了後にワーク及びキャリアを定盤上から搬出した後、上下定盤を密着させることを特徴とする両面研磨装置の異物検出方法。   In a polishing apparatus for interposing a work inserted and held in a carrier between a pair of upper and lower rotating surface plates to which a polishing pad is attached, and simultaneously polishing the front and back surfaces of the work while supplying slurry onto the pad, after polishing is completed. A method for detecting foreign matter in a double-side polishing apparatus, wherein a workpiece and a carrier are unloaded from a surface plate and then the upper and lower surface plates are brought into close contact with each other. 上下定盤を密着させた際、同時に上定盤位置の原点出しを行うことを特徴とする請求項1記載の両面研磨装置の異物検出方法。   2. The foreign object detection method for a double-side polishing apparatus according to claim 1, wherein when the upper and lower surface plates are brought into close contact with each other, the origin of the upper surface plate position is simultaneously determined.
JP2004109610A 2004-04-02 2004-04-02 Foreign matter sensing method for double-side polishing device Pending JP2005288648A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004109610A JP2005288648A (en) 2004-04-02 2004-04-02 Foreign matter sensing method for double-side polishing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004109610A JP2005288648A (en) 2004-04-02 2004-04-02 Foreign matter sensing method for double-side polishing device

Publications (1)

Publication Number Publication Date
JP2005288648A true JP2005288648A (en) 2005-10-20

Family

ID=35322172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004109610A Pending JP2005288648A (en) 2004-04-02 2004-04-02 Foreign matter sensing method for double-side polishing device

Country Status (1)

Country Link
JP (1) JP2005288648A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110031108A (en) * 2009-09-18 2011-03-24 후지코시 기카이 고교 가부시키가이샤 Wafer polishing apparatus and wafer manufacturing method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110031108A (en) * 2009-09-18 2011-03-24 후지코시 기카이 고교 가부시키가이샤 Wafer polishing apparatus and wafer manufacturing method
JP2011066342A (en) * 2009-09-18 2011-03-31 Fujikoshi Mach Corp Wafer polishing apparatus and wafer manufacturing method
CN102019581A (en) * 2009-09-18 2011-04-20 不二越机械工业株式会社 Wafer grinding equipment and wafer manufacturing method
KR101657316B1 (en) * 2009-09-18 2016-09-13 후지코시 기카이 고교 가부시키가이샤 Wafer polishing apparatus and wafer manufacturing method

Similar Documents

Publication Publication Date Title
JP5630414B2 (en) Wafer processing method
JP6937370B2 (en) Grinding equipment, grinding methods and computer storage media
CN102019581B (en) Wafer grinding equipment and wafer manufacturing method
KR102296692B1 (en) Workpiece machining device and workpiece machining method
TWI633972B (en) Honing device
JP2011235406A (en) Wafer chamfering device
CN107073683A (en) The processing unit (plant) of workpiece
CN112352303A (en) Machining device, machining method, and computer storage medium
KR101016402B1 (en) Apparatus for grinding glass of solar cells
JP2554432B2 (en) Peripheral surface processing equipment for semiconductor wafers
JP2011143516A (en) Machining device
JP2005288648A (en) Foreign matter sensing method for double-side polishing device
JP5261125B2 (en) How to detect the chuck table origin height position
JP2010137349A (en) Chuck table for wafer and wafer processing apparatus
JP5036426B2 (en) Grinding equipment
JP2012006090A (en) Grinding device
KR20100068557A (en) Transfer arm chuck
JPH02106269A (en) Polishing machine having abnormal charging detector
JPH09262762A (en) Method and device for surface-machining sheet
KR101050089B1 (en) Apparatus for double side processing of wafer
KR20080113710A (en) Apparatus and method for grinding wafer backside
JP2010137346A (en) Grinding machine
KR20030018781A (en) Wafer sending apparatus having weight sensing ability
JP2012071376A (en) Method for setting vertically moving distance of conveyor
CN117995713A (en) Processing device