JP2005285295A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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JP2005285295A
JP2005285295A JP2004102099A JP2004102099A JP2005285295A JP 2005285295 A JP2005285295 A JP 2005285295A JP 2004102099 A JP2004102099 A JP 2004102099A JP 2004102099 A JP2004102099 A JP 2004102099A JP 2005285295 A JP2005285295 A JP 2005285295A
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chip select
chip
semiconductor device
semiconductor
circuit
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Hideki Nishikawa
秀樹 西川
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Hitachi Ltd
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Hitachi Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which includes a chip select terminal and is laminated to connect the same kinds of terminals with each other, and a stacked semiconductor device using the same. <P>SOLUTION: With regard to a semiconductor device mounting a semiconductor chip comprising a selector circuit for selecting only one of a chip select and a plurality of signals and a circuit for generating a logical state for individually identifying a plurality of semiconductor devices, the semiconductor device comprises a connecting terminal including a plurality of chip select terminals provided through upper and lower surfaces of a package, and the plurality of chip select terminals and the selector circuit are connected. Only one of the plurality of chip select signals is validated according to the state of a chip select signal inputted to the selector circuit, the chip select signal is connected to the circuit for generating the logical state for individually identifying the plurality of semiconductor devices, and the select signal is outputted after changing its logical state into state for selecting different semiconductor devices. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、チップセレクト端子を備えた半導体チップを搭載した半導体装置並びに該半導体装置を積層してなる積層半導体装置に関するものである。   The present invention relates to a semiconductor device on which a semiconductor chip having a chip select terminal is mounted, and a stacked semiconductor device formed by stacking the semiconductor devices.

近年、各種電子機器の小型化及び軽量化が望まれているため、電子機器を構成する個々の電子部品の小型化も進んでいる。   In recent years, miniaturization and weight reduction of various electronic devices have been desired, and therefore miniaturization of individual electronic components constituting the electronic device is also progressing.

しかし、半導体チップを用いた電子部品のほとんどが、1つの半導体チップの周囲を樹脂やセラミックでモールドして外部端子を設けた周知のデュアルインラインパッケージ(DIP)タイプか若しくは表面実装用フラットパッケージタイプ、BGAタイプである。   However, most of the electronic components using semiconductor chips are the well-known dual in-line package (DIP) type in which the periphery of one semiconductor chip is molded with resin or ceramic and external terminals are provided, or the flat package type for surface mounting, BGA type.

このようなDIPタイプの電子部品を用いる場合、例えば半導体メモリを複数個使用するメモリ回路を構成するときには、回路基板上にDIPタイプの半導体メモリを並べて配置し、必要に応じて個々の半導体メモリのチップセレクト端子にメモリのアドレス信号に関連づけたセレクト信号を入力することによって、メモリアドレスに応じて使用する半導体メモリを選択している。   When such DIP type electronic components are used, for example, when configuring a memory circuit using a plurality of semiconductor memories, DIP type semiconductor memories are arranged side by side on a circuit board, and individual semiconductor memories are arranged as necessary. The semiconductor memory to be used is selected according to the memory address by inputting a select signal associated with the memory address signal to the chip select terminal.

このため、使用するメモリ容量が増大するに従って電子部品の実装面積が増大してしまい、電子機器の小型化の妨げになっている。実装面積の増大を防ぐために複数の半導体チップを立体的に配置して実装面積を低減する積層半導体装置も開示されている。   For this reason, as the memory capacity to be used increases, the mounting area of electronic components increases, which hinders downsizing of electronic devices. In order to prevent an increase in the mounting area, a stacked semiconductor device is also disclosed in which a plurality of semiconductor chips are arranged three-dimensionally to reduce the mounting area.

以下、図4、図5にて、従来の半導体装置について、簡単に説明する。図4は従来の半導体装置の概略平面図であり、図5は図4の半導体装置を積層した場合の概略断面図である。   Hereinafter, a conventional semiconductor device will be briefly described with reference to FIGS. FIG. 4 is a schematic plan view of a conventional semiconductor device, and FIG. 5 is a schematic cross-sectional view when the semiconductor devices of FIG. 4 are stacked.

図4の(a)ないし(d)は各パッケージの回路パターンを示す透視平面図である。図5に示した積層半導体装置100は、4個のパッケージ130、131、132、133をマザーボード134上に積み重ねて構成されている。各半導体装置は、図4に示したように、平面視矩形に形成され、その各長辺に沿って16の接続端子1ないし16が配列されている。図4は各半導体装置の上面を示しており、図4における上側の長辺に沿って接続端子1ないし8が一定の配列ピッチで配置され、図4における下側の長辺に沿って接続端子9ないし16が一定の配列ピッチで配置されている。   4A to 4D are perspective plan views showing circuit patterns of the respective packages. The stacked semiconductor device 100 shown in FIG. 5 is configured by stacking four packages 130, 131, 132, 133 on a mother board 134. As shown in FIG. 4, each semiconductor device is formed in a rectangular shape in plan view, and 16 connection terminals 1 to 16 are arranged along each long side. 4 shows the upper surface of each semiconductor device. The connection terminals 1 to 8 are arranged at a constant arrangement pitch along the upper long side in FIG. 4, and the connection terminals along the lower long side in FIG. 9 to 16 are arranged at a constant arrangement pitch.

そして各半導体装置の下面にも同様に16の接続端子が配列され、下面の各接続端子は上面の各接続端子の真下の位置に配置され、上面の各接続端子1ないし16とそれぞれの真下の接続端子とはスルーホールによって電気的に接続されている。   Similarly, 16 connection terminals are arranged on the lower surface of each semiconductor device. Each connection terminal on the lower surface is arranged at a position directly below each connection terminal on the upper surface, and each of the connection terminals 1 to 16 on the upper surface and directly below each connection terminal. The connection terminal is electrically connected through a through hole.

積層半導体装置100は、図5に示したように、このようなパッケージ130、131、132、133を、各接続端子の位置が一致する状態でマザーボード134上に積み重ねて構成されている。各パッケージには、たとえばメモリチップである半導体チップ140が搭載され、そのチップセレクト端子は、各パッケージごとに異なる接続端子に接続され、各パッケージの半導体チップ140が個別に選択できるようになっている。   As illustrated in FIG. 5, the stacked semiconductor device 100 is configured by stacking such packages 130, 131, 132, and 133 on a mother board 134 in a state where the positions of the connection terminals coincide with each other. In each package, for example, a semiconductor chip 140 which is a memory chip is mounted, and its chip select terminal is connected to a different connection terminal for each package, so that the semiconductor chip 140 of each package can be individually selected. .

そのため、もっとも下段のパッケージ130では、図4の(a)に示したように、半導体チップ140のチップセレクト端子150と接続端子9とを接続する回路パターン160がパッケージ内に形成されている。下から2段目のパッケージ131では、図4の(b)に示したように、半導体チップ140のチップセレクト端子150と接続端子10とを接続する回路パターン161がパッケージ内に形成されている。また、下から3段目のスタックキャリア132では、図4の(c)に示したように、半導体チップ140のチップセレクト端子150と接続端子11とを接続する回路パターン162がパッケージ内に形成されている。そして、最上段のパッケージ133では、図4の(d)に示したように、半導体チップ140のチップセレクト端子150と接続端子12とを接続する回路パターン163がパッケージ内に形成されている。   Therefore, in the lowermost package 130, as shown in FIG. 4A, a circuit pattern 160 for connecting the chip select terminal 150 and the connection terminal 9 of the semiconductor chip 140 is formed in the package. In the second-stage package 131 from the bottom, as shown in FIG. 4B, a circuit pattern 161 for connecting the chip select terminal 150 of the semiconductor chip 140 and the connection terminal 10 is formed in the package. In the third stack carrier 132 from the bottom, as shown in FIG. 4C, a circuit pattern 162 that connects the chip select terminal 150 of the semiconductor chip 140 and the connection terminal 11 is formed in the package. ing. In the uppermost package 133, as shown in FIG. 4D, a circuit pattern 163 that connects the chip select terminal 150 and the connection terminal 12 of the semiconductor chip 140 is formed in the package.

その結果、図5に示したように、最上段のパッケージ133に搭載された半導体チップ140のチップセレクト端子150は、下面の接続端子9によりマザーボード134上の回路に接続され、2段目の半導体チップ132のチップセレクト端子150は点線で示した経路171によってマザーボード134に接続され、3段目および最上段の半導体チップ140のチップセレクト端子150はそれぞれ経路172、経路173によってマザーボード134に接続される。   As a result, as shown in FIG. 5, the chip select terminal 150 of the semiconductor chip 140 mounted on the uppermost package 133 is connected to the circuit on the mother board 134 by the connection terminal 9 on the lower surface, so that the second-stage semiconductor The chip select terminal 150 of the chip 132 is connected to the motherboard 134 by a path 171 indicated by a dotted line, and the chip select terminals 150 of the third and uppermost semiconductor chips 140 are connected to the motherboard 134 by a path 172 and a path 173, respectively. .

また、特開2003−163326号公報では別の技術が開示されている。以下に簡単に説明する。図6に示すように半導体チップ230上面のチップセレクト端子250と接続端子9ないし12とをチップ上面の配線270によって接続し、チップ上面の配線270を図6に示す点線の部分で切断することにより、チップセレクト端子250と接続端子9のみが接続された半導体チップを得ることができる。同様に配線270の切断する位置を変えることにより、チップセレクト信号250と接続端子10ないし12のうち一つのみを接続した半導体チップを得る。   Japanese Patent Laid-Open No. 2003-163326 discloses another technique. Briefly described below. As shown in FIG. 6, the chip select terminal 250 on the upper surface of the semiconductor chip 230 and the connection terminals 9 to 12 are connected by the wiring 270 on the upper surface of the chip, and the wiring 270 on the upper surface of the chip is cut at the dotted line portion shown in FIG. A semiconductor chip in which only the chip select terminal 250 and the connection terminal 9 are connected can be obtained. Similarly, by changing the cutting position of the wiring 270, a semiconductor chip in which only one of the chip select signal 250 and the connection terminals 10 to 12 is connected is obtained.

特開2003−163326号公報JP 2003-163326 A

解決しようとする問題点は、積層する各半導体装置のパッケージを個別のパターンとする場合、各パッケージでそれぞれ個別にパターン設計し、異なるマスクを作成して製作する必要があり、初期コストが高くなる点である。また、各半導体装置が相互に異なる部品であるため、個別に管理しなければならず、管理コストが上昇する点である。また、積層する各半導体装置上で複数のチップセレクト信号を接続したパターンを個別に切断する場合、製造工程が複雑になり、製造コストが高くなる点である。   The problem to be solved is that, when the packages of the semiconductor devices to be stacked are made into individual patterns, it is necessary to design the patterns individually for each package and to create and manufacture different masks, which increases the initial cost. Is a point. In addition, since each semiconductor device is a different part, it must be managed individually, which increases the management cost. In addition, in the case of individually cutting a pattern in which a plurality of chip select signals are connected on each stacked semiconductor device, the manufacturing process becomes complicated and the manufacturing cost increases.

本発明は、複数のチップセレクト信号を全て半導体チップの内部に入力し、積層される各半導体装置を個別に識別できる信号の状態に対応させて、前記複数のチップセレクト信号のうちの1つのみを有効にすることによって、積層する各半導体装置の半導体チップ、パッケージを同一のものにすることができ、コストの増加を無くすことができる。   The present invention inputs all of a plurality of chip select signals into a semiconductor chip, and makes only one of the plurality of chip select signals corresponding to the state of a signal capable of individually identifying each stacked semiconductor device. By making effective, it is possible to make the semiconductor chip and the package of each semiconductor device to be laminated the same, and to eliminate an increase in cost.

本発明の半導体装置は、チップセレクト端子を備えた同一チップ、同一パッケージを同じ位置に形成されている接続端子同士を接続して、複数個積み重ねることができるという利点がある。   The semiconductor device of the present invention has an advantage that a plurality of connection terminals formed in the same position on the same chip and the same package having chip select terminals can be connected and stacked.

本発明の半導体装置は、同じ位置に形成されている接続端子同士を接続して、複数個積み重ねることができる。このとき、複数のチップセレクト信号は各半導体チップ内に設けたセレクタ回路に入力される。また、チップセレクト選択信号の状態により、複数のチップセレクト信号から一つを選択する。さらにチップセレクト選択信号は、インクリメント回路にも入力され、インクリメントされた状態に変化して出力される。インクリメント回路から出力された信号は、次段の半導体チップの前記チップセレクト選択信号として入力される。これにより、各半導体チップのチップセレクト信号を互いに異なる1つのチップセレクト信号のみが有効な状態にすることによって、最大で前記チップセレクト端子の数に相当する半導体チップを積み重ねることができる。   A plurality of the semiconductor devices of the present invention can be stacked by connecting the connection terminals formed at the same position. At this time, a plurality of chip select signals are input to a selector circuit provided in each semiconductor chip. Further, one of the plurality of chip select signals is selected according to the state of the chip select selection signal. Further, the chip select selection signal is also input to the increment circuit, and is changed to an incremented state and output. The signal output from the increment circuit is input as the chip select selection signal for the next-stage semiconductor chip. As a result, it is possible to stack semiconductor chips corresponding to the number of the chip select terminals at the maximum by making the chip select signal of each semiconductor chip valid only by one different chip select signal.

図1は、本発明装置の半導体装置の接続関係を示す図、図2は、パッケージ30を上面側から見た透視平面図、図3は図2に示すパッケージ30の短辺側の側面からの透視断面図である。   1 is a diagram showing the connection relationship of the semiconductor device of the present invention device, FIG. 2 is a perspective plan view of the package 30 as viewed from the upper surface side, and FIG. 3 is a side view of the package 30 shown in FIG. FIG.

各図において、1〜20はパッケージ上の接続端子、30はパッケージ、31はマザーボード、40は半導体チップ、50〜53は半導体チップ40のチップセレクト入力端子、54,55は半導体チップのチップセレクト選択信号入力端子、56,57は半導体チップのチップセレクト選択信号出力端子、60〜67は半導体チップの入力端子とパッケージ上の接続端子を接続する配線である。   In each figure, 1 to 20 are connection terminals on the package, 30 is a package, 31 is a motherboard, 40 is a semiconductor chip, 50 to 53 are chip select input terminals of the semiconductor chip 40, and 54 and 55 are chip select selections of the semiconductor chip. Signal input terminals 56 and 57 are chip select selection signal output terminals of the semiconductor chip, and 60 to 67 are wirings for connecting the input terminals of the semiconductor chip and the connection terminals on the package.

図3に示したように本実施例の積層半導体装置においても、従来と同様、接続端子1〜20がパッケージ上面および下面のそれぞれに間隔を置いてほぼ一列に配置され、下面の接続端子は対応する上面の接続端子のほぼ真下に配置される。   As shown in FIG. 3, in the stacked semiconductor device of this embodiment, as in the conventional case, the connection terminals 1 to 20 are arranged in a line at intervals on the upper and lower surfaces of the package, and the connection terminals on the lower surface correspond to each other. It is arranged almost directly below the connecting terminal on the upper surface.

本発明の実施例では、パッケージ上面および下面の接続端子11〜14がチップセレクト用の接続端子であり、図3(a)に示すように上面の接続端子11は、スルーホールにより下面の接続端子11と電気的に接続されている。また、半導体チップ40のチップセレクト端子50ともワイヤボンディングおよび配線60により電気的に接続されている。接続端子12〜14と半導体チップ40のチップセレクト端子51〜53についても同様に電気的に接続されている。   In the embodiment of the present invention, the connection terminals 11 to 14 on the upper and lower surfaces of the package are chip select connection terminals. As shown in FIG. 3A, the upper connection terminal 11 is connected to the lower connection terminal by a through hole. 11 is electrically connected. The chip select terminal 50 of the semiconductor chip 40 is also electrically connected by wire bonding and wiring 60. Similarly, the connection terminals 12 to 14 and the chip select terminals 51 to 53 of the semiconductor chip 40 are also electrically connected.

接続端子19,20は、チップセレクト選択信号であり、図3(b)(c)に示すように、パッケージ上面の接続端子19,20とパッケージ下面の接続端子19,20は電気的に絶縁されている。また、パッケージ下面の接続端子19,20は、それぞれ半導体チップ40のチップセレクト選択信号入力端子54,55とワイヤボンディングおよび配線64,65により電気的に接続されている。パッケージ上面の接続端子19,20は、それぞれ半導体チップ40のチップセレクト選択信号入力端子56,57とワイヤボンディングおよび配線66,67により電気的に接続されている。   The connection terminals 19 and 20 are chip select selection signals. As shown in FIGS. 3B and 3C, the connection terminals 19 and 20 on the upper surface of the package are electrically insulated from the connection terminals 19 and 20 on the lower surface of the package. ing. The connection terminals 19 and 20 on the lower surface of the package are electrically connected to the chip select selection signal input terminals 54 and 55 of the semiconductor chip 40 by wire bonding and wirings 64 and 65, respectively. The connection terminals 19 and 20 on the upper surface of the package are electrically connected to the chip select selection signal input terminals 56 and 57 of the semiconductor chip 40 by wire bonding and wirings 66 and 67, respectively.

本実施例では、図1に示すように4個のパッケージ30を積み重ねて積層半導体装置を構成している。マザーボード34とパッケージ30のパッケージ下面の接続端子、パッケージ30の同一位置にある接続端子同士を例えば半田を材料とした半田ボールを用いて接続される。   In this embodiment, as shown in FIG. 1, four packages 30 are stacked to constitute a stacked semiconductor device. The connection terminals on the lower surface of the package and the mother board 34 and the connection terminals at the same position of the package 30 are connected using, for example, solder balls made of solder.

図1に示す最下段に積層される半導体チップ40では、チップセレクト0〜3が、マザーボードから半田ボール、スルーホール、配線、を通してチップセレクト端子50〜53に入力され、さらに半導体チップ内のセレクタ回路に接続される。   In the semiconductor chip 40 stacked at the lowermost stage shown in FIG. 1, chip select 0 to 3 are input from the mother board to the chip select terminals 50 to 53 through solder balls, through holes and wirings, and further a selector circuit in the semiconductor chip. Connected to.

チップセレクト選択信号信号は、マザーボードのGND(0V)から半田ボール、スルーホール、配線、を通してチップセレクト選択信号入力端子54,55に入力され、さらに半導体チップ内のセレクタ回路に接続される。このとき、チップセレクト選択信号入力端子54,55に入力される信号は、0Vのため、それぞれ論理値”0”,”0”となる。セレクタ回路は、論理値”0”,”0”の場合、チップセレクト0のみを選択するように設計されている。これにより最下段の半導体チップ40のメモリ回路は、チップセレクト0により動作状態または非動作状態が設定される。   The chip select selection signal signal is input from the GND (0V) of the motherboard to the chip select selection signal input terminals 54 and 55 through solder balls, through holes, and wirings, and is further connected to a selector circuit in the semiconductor chip. At this time, since the signals input to the chip select selection signal input terminals 54 and 55 are 0 V, the logical values are “0” and “0”, respectively. The selector circuit is designed to select only chip select 0 when the logical values are “0” and “0”. As a result, the memory circuit of the lowermost semiconductor chip 40 is set to the operating state or the non-operating state by the chip select 0.

また、前記チップセレクト選択信号は、インクリメント回路にも入力され、論理値”0”,”0”がインクリメントされて”1”,”0”となって、チップセレクト選択信号出力端子56,57から2段目の半導体チップに送られる。   The chip select selection signal is also input to the increment circuit, and the logical values “0” and “0” are incremented to become “1” and “0”, and are output from the chip select selection signal output terminals 56 and 57. It is sent to the second-stage semiconductor chip.

マザーボードから2段目の半導体チップ40でも前記最下段の半導体チップに入力されるのチップセレクト0〜3が、最下段の半導体装置のパッケージを通ってチップセレクト端子50〜53に入力され、さらに半導体チップ内のセレクタ回路に接続される。   Chip select 0 to 3 input to the lowermost semiconductor chip in the second-stage semiconductor chip 40 from the motherboard are input to the chip select terminals 50 to 53 through the package of the lowermost semiconductor device, and further to the semiconductor. Connected to the selector circuit in the chip.

マザーボードから2段目の半導体チップ40のチップセレクト選択信号入力端子54,55には、前記最下段の半導体チップ40のチップセレクト選択信号出力端子56,57からの論理値”1”,”0”の信号が入力される。セレクタ回路は論理値”1”,”0”の場合、チップセレクト1を選択するように設計されている。これによりマザーボードから2段目の半導体チップ40のメモリ回路は、チップセレクト1により動作状態または非動作状態が設定される。   The logic values “1” and “0” from the chip select selection signal output terminals 56 and 57 of the lowermost semiconductor chip 40 are applied to the chip select selection signal input terminals 54 and 55 of the second stage semiconductor chip 40 from the motherboard. Signal is input. The selector circuit is designed to select the chip select 1 when the logical values are “1” and “0”. As a result, the memory circuit of the second-stage semiconductor chip 40 from the mother board is set to the operating state or the non-operating state by the chip select 1.

また、前記チップセレクト選択信号は、インクリメント回路にも入力され、論理値”1”,”0”がインクリメントされて”0”,”1”となって、セレクト信号出力端子56,57から3段目の半導体チップに送られる。   Further, the chip select selection signal is also input to an increment circuit, and logical values “1” and “0” are incremented to become “0” and “1”, and three stages from the select signal output terminals 56 and 57 are obtained. Sent to the semiconductor chip of the eye.

チップセレクト信号0〜3はマザーボードから3段目、4段目の半導体チップ40に対してもマザーボードから2段目の半導体チップ40と同じく接続される。マザーボードから3段目の半導体チップ40のチップセレクト選択信号入力端子54,55には、前記マザーボードから2段目の半導体チップ40のチップセレクト選択信号出力端子56,57の論理値”0”,”1”の信号が入力される。マザーボードから4段目の半導体チップ40のチップセレクト選択信号入力端子54,55には、マザーボードから3段目の半導体チップ40のチップセレクト選択信号入力の論理値”0”,”1”がインクリメントされた論理値”1”,”1” の信号が入力される。セレクタ回路は論理値”0”,”1”の場合、チップセレクト2を選択し、論理値”1”,”1”の場合、チップセレクト3を選択するように設計されている。これにより、マザーボードから3段目の半導体チップ40のメモリ回路は、チップセレクト2により動作状態または非動作状態が設定され、マザーボードから4段目の半導体チップ40のメモリ回路は、チップセレクト3により動作状態または非動作状態が設定される。このようにして、各半導体チップのチップセレクト信号を互いに異なる1つのチップセレクト信号のみが有効な状態となる積層半導体装置を得ることができる。   The chip select signals 0 to 3 are connected to the third and fourth semiconductor chips 40 from the mother board in the same manner as the second semiconductor chip 40 from the mother board. The logic values “0” and “0” of the chip select selection signal output terminals 56 and 57 of the second-stage semiconductor chip 40 from the motherboard are connected to the chip select selection signal input terminals 54 and 55 of the third-stage semiconductor chip 40 from the motherboard. 1 "signal is input. The logic values “0” and “1” of the chip select selection signal input of the third-stage semiconductor chip 40 from the motherboard are incremented to the chip select selection signal input terminals 54 and 55 of the fourth-stage semiconductor chip 40 from the motherboard. Signals with logical values “1” and “1” are input. The selector circuit is designed to select the chip select 2 when the logical values are “0” and “1”, and to select the chip select 3 when the logical values are “1” and “1”. As a result, the memory circuit of the semiconductor chip 40 in the third stage from the motherboard is set to the operating state or non-operating state by the chip select 2, and the memory circuit of the semiconductor chip 40 in the fourth stage from the motherboard is operated by the chip select 3. State or non-operational state is set. In this way, it is possible to obtain a stacked semiconductor device in which only one chip select signal different from each other in the chip select signal of each semiconductor chip is valid.

本実施例では、4個の半導体装置を積み重ねる積層半導体装置について説明したが、積層する半導体装置の数は4個に限定されるものではない。4個以下の半導体装置を積層することも可能である。また、チップセレクト信号、チップセレクト選択信号の数を増やすことにより、4個以上の半導体装置を積層することも可能である。   In this embodiment, a stacked semiconductor device in which four semiconductor devices are stacked has been described. However, the number of stacked semiconductor devices is not limited to four. It is also possible to stack up to four semiconductor devices. It is also possible to stack four or more semiconductor devices by increasing the number of chip select signals and chip select selection signals.

本実施例では、インクリメント回路を例に説明したが、デクリメント回路によっても実現可能である。また、複数の半導体装置を個別に識別する論理状態を生成する回路であれば、前記インクリメント、デクリメント回路に限定するものではない。   In this embodiment, the increment circuit has been described as an example, but it can also be realized by a decrement circuit. Further, the circuit is not limited to the increment / decrement circuit as long as it is a circuit that generates a logic state for individually identifying a plurality of semiconductor devices.

本実施例では、半導体チップは20ピンのパッケージ内に搭載され、ワイヤボンディングでパッケージに接続される半導体装置を例に説明したが、パッケージの上面、下面に半導体チップが搭載される形態、半導体チップがワイヤボンディング以外の例えば半田ボール等によりパケージに接続される形態等も容易に類推され、半導体装置のピン数、半導体チップの搭載位置、パッケージとの接続方法、パッケージ同士の接続方法を限定するものではない。   In this embodiment, the semiconductor chip is mounted in a 20-pin package and connected to the package by wire bonding. The semiconductor chip is mounted on the upper and lower surfaces of the package. Semiconductor chip Other than wire bonding, for example, the form of connection to the package by solder balls or the like can be easily inferred, and the number of pins of the semiconductor device, the mounting position of the semiconductor chip, the connection method with the package, and the connection method between the packages are limited is not.

半導体装置の接続関係を示す図である。(実施例1)It is a figure which shows the connection relation of a semiconductor device. (Example 1) 半導体装置を上面側から見た透視平面図である。(実施例1)It is the see-through plan view which looked at the semiconductor device from the upper surface side. (Example 1) 半導体装置の側面からの透視断面図である。(実施例1)It is a perspective sectional view from the side of a semiconductor device. (Example 1) 半導体装置を上面側から見た透視平面図である。(背景技術)It is the see-through plan view which looked at the semiconductor device from the upper surface side. (Background technology) 積層した半導体装置の概略断面図である。(背景技術)It is a schematic sectional drawing of the laminated | stacked semiconductor device. (Background technology) 半導体装置を上面側から見た透視平面図である。(背景技術)It is the see-through plan view which looked at the semiconductor device from the upper surface side. (Background technology)

符号の説明Explanation of symbols

1〜20 パッケージ上の接続端子
30 半導体装置
31 マザーボード
40 パッケージ
50〜53 チップセレクト入力端子
54,55 チップセレクト選択信号入力端子
56,57 チップセレクト選択信号出力端子
60〜67 パッケージ内の配線
100 積層半導体装置
131〜133 半導体装置
134 マザーボード
140 半導体チップ
150 チップセレクト入力端子
160〜163 パッケージ内の配線
171〜174 信号伝播経路
230 半導体チップ
250 チップセレクト入力端子
270 半導体チップ上の配線
1 to 20 Connection terminal on package 30 Semiconductor device 31 Motherboard 40 Package 50 to 53 Chip select input terminal 54 and 55 Chip select selection signal input terminal 56 and 57 Chip select selection signal output terminal 60 to 67 Wiring in package 100 Multilayer semiconductor Device 131 to 133 Semiconductor device 134 Motherboard 140 Semiconductor chip 150 Chip select input terminal 160 to 163 Wiring in package 171 to 174 Signal propagation path 230 Semiconductor chip 250 Chip select input terminal 270 Wiring on semiconductor chip

Claims (4)

内部回路を動作状態または非動作状態に設定するチップセレクトと複数の信号のうちの1つのみを選択するセレクタ回路と複数の半導体装置を個別に識別する論理状態を生成する回路を備えた半導体チップをパッケージ(回路基板)上面、下面または内部に搭載した半導体装置であって、複数のチップセレクト端子を含み且つそれぞれがパッケージの上面および下面に貫通して設けられている複数の接続端子とを備え、前記複数のチップセレクト端子と前記セレクタ回路とを接続し、該セレクタ回路に入力されるチップセレクト選択信号の状態により複数のチップセレクト信号のうちの1つのみを有効とし、且つチップセレクト選択信号を前記複数の半導体装置を個別に識別する論理状態を生成する回路に接続し、チップセレクト選択信号の論理状態を異なる半導体装置を選択する状態に変化させて出力することを特徴とする半導体装置。   Semiconductor chip comprising a chip select for setting an internal circuit in an operating state or a non-operating state, a selector circuit for selecting only one of a plurality of signals, and a circuit for generating a logic state for individually identifying the plurality of semiconductor devices Is a semiconductor device mounted on the upper surface, lower surface or inside of the package (circuit board), and includes a plurality of connection terminals including a plurality of chip select terminals, each penetratingly provided on the upper and lower surfaces of the package. The plurality of chip select terminals and the selector circuit are connected, and only one of the plurality of chip select signals is made effective according to the state of the chip select selection signal input to the selector circuit, and the chip select selection signal To a circuit for generating a logic state for individually identifying the plurality of semiconductor devices, and a chip select selection signal Semiconductor device and outputs the physical state by changing the state of selecting the different semiconductor device. 前記半導体チップの内部回路がメモリ回路である請求項1に記載の半導体装置。   The semiconductor device according to claim 1, wherein an internal circuit of the semiconductor chip is a memory circuit. 前記請求項1の半導体装置のチップセレクト端子を含む同じ位置の接続端子同士を接続して積み重ねられており、それぞれ異なるチップセレクト信号を選択できることを特徴とする積層半導体装置。   2. The stacked semiconductor device according to claim 1, wherein connection terminals at the same position including the chip select terminal of the semiconductor device of claim 1 are connected and stacked, and different chip select signals can be selected. 前記請求項2の半導体装置のチップセレクト端子を含む同じ位置の接続端子同士を接続して積み重ねられており、それぞれ異なるチップセレクト信号を選択できることを特徴とする積層半導体装置。
3. A stacked semiconductor device according to claim 2, wherein the connection terminals at the same position including the chip select terminal of the semiconductor device of claim 2 are connected and stacked, and different chip select signals can be selected.
JP2004102099A 2004-03-31 2004-03-31 Semiconductor device Pending JP2005285295A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008305378A (en) * 2007-06-11 2008-12-18 Hynix Semiconductor Inc Memory module and memory system
KR100905816B1 (en) * 2007-12-28 2009-07-02 주식회사 하이닉스반도체 Controller for chip selection and nonvolatile memory device comprising that
KR101420817B1 (en) 2008-01-15 2014-07-21 삼성전자주식회사 Semiconductor Integrated Circuit Device Electrically Connecting Integrated Circuit Modules Stacked Sequentially With 3-Dimensional Serial And Parallel Circuits And Method Of Forming The Same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008305378A (en) * 2007-06-11 2008-12-18 Hynix Semiconductor Inc Memory module and memory system
KR100905816B1 (en) * 2007-12-28 2009-07-02 주식회사 하이닉스반도체 Controller for chip selection and nonvolatile memory device comprising that
US7660185B2 (en) 2007-12-28 2010-02-09 Hynix Semiconductor Inc. Chip select controller and non-volatile memory device including the same
KR101420817B1 (en) 2008-01-15 2014-07-21 삼성전자주식회사 Semiconductor Integrated Circuit Device Electrically Connecting Integrated Circuit Modules Stacked Sequentially With 3-Dimensional Serial And Parallel Circuits And Method Of Forming The Same

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