JP2005281797A - Magnetic film plating equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide magnetic film plating equipment with which the problems relating to the arrangement of the elements constituting the plating equipment can be reduced. <P>SOLUTION: The plating equipment has a position regulation mechanism capable of optionally changing at least either of a direction of an impressed magnetic field 3 or a direction of a substrate 1 to be deposited with a magnetic film according to the shape of at least either of a magnetic film forming pattern shape 2 or a magnetic domain shape. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a magnetic film plating apparatus, and more particularly, to a magnetic film characterized by a structure for reducing problems related to the arrangement of elements constituting a plating apparatus used in a manufacturing process of a magnetic head, a magnetic recording medium, and the like. The present invention relates to a film plating apparatus.

  With the recent progress of high-density recording and high-speed magnetic recording apparatuses, various demands for magnetic films used for thin-film magnetic heads or magnetic recording media are increasing. An important requirement is an increase in permeability in the high frequency region.

  Conventionally, such a magnetic film has been formed by a vapor deposition method, a sputtering method, an electrolytic plating method, or a laminated film that combines these. Since the film is formed by an electrolytic plating method capable of forming a film, a conventional magnetic film plating apparatus will be described with reference to FIG.

See FIG.
FIG. 11 is a schematic configuration diagram of a conventional magnetic film plating apparatus, in which an upper diagram is a projection plan view and a lower diagram is a cross-sectional view.
The magnetic film plating apparatus includes a plating tank 41 for receiving a plating solution 51 and performing a plating process, an overflow tank 42 for receiving the plating solution 51 overflowing from the plating tank 41, and a pair of magnetic fields for generating an applied magnetic field in a predetermined direction. Permanent magnets 43 and 44, an anode 45, a substrate, that is, a cathode 46, a substrate fixing jig 47 for fixing and holding the cathode 46, an auxiliary electrode 48 for allowing a current to flow uniformly through the cathode 46, and a stirrer 49 at one end. It comprises a stirring arm 50 for supporting and fixing and for translational movement.
The plating solution 51 overflowing into the overflow tank 42 is poured from the lower part of the plating tank 41 after removing foreign substances and the like through a reflux means (not shown).

  In the plating process, with a magnetic field generated between the permanent magnets 43 and 44 applied to the plating solution 51, a voltage is applied between the anode 45 and the cathode 46 to pass a current, and the stirrer A magnetic film such as permalloy is deposited on the cathode 46 in a state in which the plating solution 51 is agitated by translating 49 to constantly supply new plating solution 51 to the surface of the cathode 46.

  When breakdown is performed from the parameters used as the function evaluation index of the magnetic film thus formed to the parameters in the manufacturing process, the magnetic force is reduced from the coercive force, magnetic anisotropy, magnetic flux density, or magnetostriction of the magnetic film. Although the composition and film thickness of the film itself are reached, and these conditions are intricately intertwined, if the plating deposition rate can be made constant on the surface of the product to be plated, variation in composition and film thickness can be minimized. It will be possible.

  However, with the recent increase in recording density, the pattern to be plated is becoming finer and the substrate to be processed tends to be larger. The composition of the magnetic film in one substrate to be processed, film thickness variation, and lot-to-lot In addition, the variation among various products is increasing.

For this reason, a method of rotating the plating object in the applied magnetic field direction by a certain angle and energizing it in a stopped state (for example, see Patent Document 1), or a state in which the cathode and the magnetic field generating function are integrated and the magnetic field application direction is fixed. Thus, a device for performing the plating process while rotating the product to be plated (see, for example, Patent Document 2) has been made.
Japanese Unexamined Patent Publication No. 05-017898 JP 05-283263 A

  There are various causes for variations in the composition and thickness of the magnetic film formed by the electrolytic plating method, but as described above, changes in plating efficiency due to changes in current density, differences in ion concentration and deterioration of uneven portions on the substrate surface, etc. There is a problem that the plating deposition rate caused by this becomes non-uniform, and the direct influence of these causes variations in the composition and thickness of the magnetic film.

  That is, in general, an anode, a cathode, a stirrer, a plating solution supply port, and the like are disposed inside the electrolytic plating tank, and a permanent magnet or an electromagnet is disposed and fixed on the outer periphery of the electrolytic plating tank. Depending on the arrangement, it affects the flow and stirring of the plating solution, the stagnation of the solution when the anode and the cathode are energized, and the non-uniform current distribution. And cause variations in film thickness.

  Further, in the conventional magnetic film plating apparatus, since the magnetic field direction is fixed, the shape of the substrate to be processed, for example, the orientation flat (orientation flat) position and pattern design, for example, the direction of the light pole, the stirring direction, Therefore, the film thickness and composition distribution of the magnetic film are limited in the magnetic field direction (magnetic domain shape).

  Further, as described above, when the cathode plate serving as the substrate to be processed is rotated, the stirring speed is different between the central portion of the substrate to be processed and the outer peripheral portion. Therefore, in the case of permalloy, the Fe content is Will increase the difference.

  Accordingly, an object of the present invention is to alleviate problems relating to the arrangement of elements constituting the plating apparatus.

FIG. 1 is a diagram illustrating the basic configuration of the present invention. Means for solving the problems in the present invention will be described with reference to FIG.
Refer to FIG. 1 In order to solve the above-mentioned problem, the present invention forms a magnetic film in the direction of the applied magnetic field 3 in accordance with at least one of the magnetic film formation pattern shape 2 or the magnetic domain shape in the magnetic film plating apparatus. And a position adjusting mechanism capable of arbitrarily changing at least one of the directions of the substrate 1 to be performed.

The present invention also provides a position adjusting mechanism capable of arbitrarily changing the agitating direction by the agitating means 6 while maintaining the direction of the substrate 1 on which the magnetic film is formed and the direction of the applied magnetic field 3 in the magnetic film plating apparatus. It is characterized by having.
In this case, the stirring operation of the stirring means 6 is a translation operation on a plane parallel to the main surface of the substrate 1 on which the magnetic film is formed.

  In this way, by adding the position adjusting mechanism between the direction of the applied magnetic field 3 and the substrate 1 for forming the magnetic film, the substrate 1 and the stirring direction, the direction of the applied magnetic field 3 and the direction of the substrate 1 are finely adjusted. While maintaining the positional relationship, it is possible to adjust the orientation of the magnetic film formation pattern shape 2 or the magnetic domain shape in the plating tank 10, that is, the positional relationship, and thereby the film thickness and composition of the formed magnetic film. Variations can be reduced.

  That is, when forming the magnetic film of the magnetic head, the target substrate 1 is mainly a wafer, and even in a single wafer, the orientation flat film thickness and composition tend to be different in many cases. However, by changing the wafer direction during the plating film formation, the film thickness and composition variation in the wafer due to the liquid flow can be reduced.

  In addition, there is provided a database in which a correlation between at least one of the magnetic film formation pattern shape 2 or the magnetic domain shape and the film thickness and composition distribution of the magnetic film in at least the magnetic field application direction and the stirring direction is simulated in advance. A position adjustment mechanism that automatically sets the magnetic field application direction and the stirring direction according to at least one of the formation pattern shape 2 or the magnetic domain shape may be provided.

  That is, a correlation between at least one of the magnetic film formation pattern shape 2 or the magnetic domain shape in the electroplating process and the magnetic film thickness and composition distribution in the magnetic field application direction and the stirring direction is obtained in advance by simulation, By storing at least one of the magnetic film formation pattern shape 2 or the magnetic domain shape to be deposited, conditions such as a magnetic field application direction and a stirring direction with little variation in film thickness and composition ratio are stored. Can be set automatically.

  The mechanism for applying the magnetic field is connected to the rotating shaft 7 that rotatably holds the cathode, the bearing 8 that rotatably holds the rotating shaft 7, and the locking mechanism. The rotary arm 9 and the magnets 4 and 5 fixed to the tip of the rotary arm 9 may be configured so that the rotary motion is transmitted to the rotary arm 9 only when the bearing 8 is locked.

  With such a configuration, an anode, a cathode, and a substrate fixing jig are arranged concentrically with the plating tank 10 in a tank based on a general cylindrical shape or a cube that is easily arranged symmetrically about the substrate 1. It is possible to arbitrarily adjust the position of the stirring direction while maintaining the directions of the substrate 1 and the applied magnetic field 3, the substrate 1 and the stirring direction, and the substrate 1 and the applied magnetic field 3.

For example, the anode, the cathode, the substrate fixing jig, and the auxiliary electrode plate in the plating tank 10 are arranged on the concentric circles of the cylindrical plating tank 10, and it is possible to keep the distance from the tank wall constant. As a premise, the arrangement in the tank can be expressed by a straight line symmetry passing through the center of the tank.
In this case, the current distribution / equipotential line when the influence of the liquid flow and the substrate pattern design is ignored can be in the best state.

  As explained above, the anode, cathode, substrate fixing jig, and auxiliary electrode plate in the plating tank are on the concentric circles of the plating tank based on the cylindrical plating apparatus, and the permanent magnet or electromagnet that generates a magnetic field is an arc. Because of the shape, the arrangement in the tank is line-symmetric with a straight line passing through the center of the tank, and the current distribution / equipotential line is in the best state.

  In addition, the magnetic field generation source with adjustable position makes it possible to set the optimum magnetic field direction and agitation direction for the orientation of the wafer and the pattern shape forming the plating film. Does not require a substrate fixing jig.

  The magnetic film plating apparatus of the present invention is a tank based on a general cylindrical shape or cube that is easy to arrange symmetrically around a processing substrate, and an anode, a cathode, that is, a substrate, a substrate fixing jig, and a plating tank. A mechanism that is arranged on concentric circles and that can adjust the position of the agitation direction arbitrarily while maintaining the direction of the substrate and the applied magnetic field, the direction of the substrate and the agitation, and the direction of the substrate and the applied magnetic field is added.

Here, with reference to FIG. 2, the magnetic film plating apparatus of Example 1 of this invention is demonstrated.
See Figure 2
FIG. 2 is a schematic configuration diagram of a conventional magnetic film plating apparatus, in which an upper diagram is a projection plan view and a lower diagram is a cross-sectional view.
The magnetic film plating apparatus includes a cylindrical plating tank 11 that contains a plating liquid 26, an annular overflow tank 12 that receives the plating liquid 26 overflowing from the plating tank 11, and a pair for generating an applied magnetic field in a predetermined direction. Permanent magnets 13, 14, anode 15, cathode, that is, substrate 16, substrate fixing jig 17 for fixing and holding substrate 16, auxiliary pole 18 for allowing a current to flow uniformly through substrate 16, and stirrer 19 at one end. And a stirring arm 20 for supporting and fixing and for translational movement.
The plating liquid 26 overflowing into the overflow tank 12 is injected from the lower part of the plating tank 11 through a reflux means (not shown), and the plating liquid 26 is interposed between the substrate fixing jig 17 and the plating tank 11. A seal member for preventing leakage is provided.

The pair of permanent magnets 13 and 14 is fixed to the tip of a rotating arm 23 that protrudes from a bearing 22 provided with a lock mechanism while rotatably holding a rotating shaft 21 that holds the substrate 16 rotatably.
In the pair of permanent magnets 13 and 14 in the figure, only the magnetic poles facing each other are shown.

  The rotary shaft 21 is coupled to a motor 25 via a rotation transmission mechanism 24 including a pulley and a rubber belt, and is configured such that the rotational motion is transmitted to the rotary arm 23 only when the bearing 22 is locked. .

  That is, after the substrate 16 is set on the substrate fixing jig 17 so as to have a predetermined positional relationship with the direction of the magnetic field, that is, the extending direction of the rotating arc 23, the motor 25 is operated with the lock mechanism locked. By driving, the applied magnetic field and the direction of the substrate 16 are set so as to be at a predetermined angle with respect to the direction of translational movement of the stirrer 19 in a state in which the direction of the substrate 16 is maintained at a predetermined angle.

  By driving the motor 25 with the lock mechanism of the bearing 22 released, only the substrate fixing jig 17 can be rotated, and the direction of the substrate 16 is set to the direction of the magnetic field generated from the permanent magnets 13 and 14. On the other hand, it can be finely adjusted.

  In the plating process, a voltage is applied between the anode 15 and the substrate 16 in a state where a magnetic field generated between the single permanent magnets 13 and 14 is applied to the plating solution 26, and a current is applied to the stirrer. The magnetic film 19 is deposited on the substrate 16 in a state where the plating solution 26 is stirred by translating 19 and the surface of the substrate 16 is always supplied with a new plating solution 26.

In the middle of the plating film formation, the motor 25 is driven to change the substrate direction with respect to the stirring direction during the plating film formation, thereby reducing the film thickness and composition variation in the wafer due to the liquid flow.
In this case, if the lock mechanism is released and a rotational motion is applied, the position and direction of the substrate alone can be adjusted, and if the rotational motion is applied with the lock mechanism turned on, the applied magnetic field and the direction of the substrate are set to a predetermined value. The position direction of the substrate can be adjusted in a state where the angle is maintained.

Next, a plating process using the magnetic film plating apparatus according to the first embodiment of the present invention will be described with reference to FIGS.
See Figure 3
FIG. 3 shows that the orientation flat of the substrate 16 in which the orientation of the orientation flat and the major axis of the upper magnetic pole coincide with the direction of the applied magnetic field is held by the substrate fixing jig. The case where plating is performed in a state where the positional relationship is set so as to coincide with the translation direction of the stirring bar 19 is shown, and corresponds to a conventional plating process.

See Figure 4
FIG. 4 shows the orientation of the orientation flat and the orientation of the top pole of the upper magnetic pole held by the substrate fixing jig so that the orientation of the orientation flat of the substrate 16 coincides with the direction of the applied magnetic field. The case where plating is performed in a state where the positional relationship is set so that the angle of the stirring bar 19 with respect to the translation direction is 15 ° is shown.

See Figure 5
In FIG. 5, first, the orientation flat of the substrate 16 in which the orientation flat and the major axis direction of the upper magnetic pole coincide with each other is held on the substrate fixing jig so that it coincides with the direction of the applied magnetic field. After setting the positional relationship so that the angle between the direction and the translation direction of the stirrer 19 becomes 10 °, the lock mechanism of the bearing 22 is released, and only the substrate 16 is further rotated 5 °, and the orientation flat direction of the substrate 16 This shows a case where plating is performed in a state in which the positional relationship is set so that the angle between the axis and the translation direction of the stirrer 19 is 15 °.

See FIG.
In FIG. 6, first, the orientation flat of the substrate 27 in which the orientation of the orientation flat and the major axis direction of the upper magnetic pole are orthogonal to each other is held on the substrate fixing jig so as to coincide with the direction of the applied magnetic field. The case where plating is performed in a state where the direction is set to a positional relationship orthogonal to the translation direction of the stirring bar 19 is shown.

See FIG.
FIG. 7 is an explanatory view of the effect when electrolytic plating is performed under the optimum conditions close to the state of FIG. 4 using the magnetic film plating apparatus of Example 1 of the present invention. In this case, the plating conditions are as follows. Substrate current 0.47A
Stirrer translation speed 1800 cm / min Stirrer-substrate spacing 25 mm
Plating solution injection rate 2.5 l / min Auxiliary electrode current 1.29A
Plating time 16 minutes Plating solution temperature 37.5 ° C
It went on condition of.
In FIG. 7, the yoke portion means a large area portion that covers the write coil in the upper magnetic pole, and the magnetic pole portion means a small area light pole at the tip of the upper magnetic pole.

FIG. 7 also shows the result of the conventional state shown in FIG. 3, and the plating conditions in this case are as follows:
Substrate current 0.47A
Stirrer translation speed 1680 cm / min Stirrer-substrate spacing 25 mm
Plating solution injection rate 2.5 l / min Auxiliary electrode current 2.04A
Plating time 16 minutes Plating solution temperature 37.0 ° C
It went on condition of.

As shown in FIG. 7, the R value (= maximum value−minimum value) of the film thickness of the magnetic pole portion is 0.68 μm compared to the conventional 1.49 μm, and the R value / average film thickness is 43% of the conventional value. It was able to be suppressed to the extent.
Further, the variation σ of the film thickness of the magnetic pole portion is 0.22 μm with respect to the conventional 0.44 μm, and σ / average film thickness can be suppressed to about 50% of the conventional.

  As described above, even when the surface of the substrate is uneven according to the present invention, by selecting the optimum conditions using the magnetic film plating apparatus of the present invention, variation in the film thickness of the magnetic film can be greatly suppressed. It becomes possible.

See FIG.
The upper diagram of FIG. 8 is a diagram showing the relationship between the film thickness of the magnetic pole part and the Ni composition ratio in the chip at seven positions on the same wafer in the electrolytic plating in the conventional method, and the lower diagram shows the magnetic film plating apparatus of the present invention. It is a figure which shows the relationship between the film thickness of the magnetic pole part in 7 chips | tips of the same position as the prior art example when the optimal condition is selected using, and Ni composition ratio.

  As is clear from the comparison between the upper and lower figures, in the present invention, the variation in the film thickness is reduced and the variation in the Ni composition ratio is also greatly reduced, so that the variation in the characteristics of the obtained magnetic head is reduced. can do.

Next, the magnetic film plating apparatus according to the second embodiment of the present invention will be described with reference to FIGS. 10 and 11. This magnetic film plating apparatus applies the substrate direction and magnetic field application according to the shape of the magnetic film to be formed. It has a function of automatically setting the direction with respect to the stirring direction.
Since the hardware configuration of the plating apparatus itself is exactly the same as that of the magnetic film plating apparatus of the first embodiment, the illustration of the apparatus configuration is omitted.

  That is, in the second embodiment of the present invention, the optimum conditions for the substrate direction and the magnetic field application direction for the magnetic film shape to be deposited are determined in advance by simulation, and the data is stored in the control terminal. As a result, the optimum conditions can be automatically set according to the type of film to be formed, so that the throughput is improved and a high-quality product can be manufactured with good reproducibility.

See FIGS. 10 and 11
10 and 11 are diagrams showing an example of a database obtained as a result of performing simulation on a predetermined magnetic film formation pattern. FIG. 10 shows the substrate direction, magnetic field application direction, and stirring direction shown in FIG. 11 is a database when various conditions are satisfied in the positional relationship among the substrate direction, the magnetic field application direction, and the stirring direction shown in FIG.

Such a database is obtained for the positional relationship among various substrate directions, magnetic field application directions, and stirring directions, and such a database is obtained for various magnetic film formation patterns and stored in the control terminal. It ’s fine.
If there is no magnetic film formation pattern in the database that matches the shape of the magnetic film to be deposited, the most similar pattern is searched and the optimum plating position relationship is interpolated from the difference in the pattern shape, etc. It may be obtained by.

As mentioned above, although each Example of this invention was described, this invention is not restricted to the structure and conditions described in each Example, A various change is possible.
For example, in the above embodiment, the upper magnetic pole layer plating process of the induction type write head has been described. However, the present invention is not limited to the upper magnetic pole layer, but can be applied to the lower magnetic pole layer plating process. .

The shape of the permanent magnet shown in FIG. 2 is an arc shape, but is not limited to an arc shape, and a rectangular permanent magnet may be used.
Moreover, a magnet is not restricted to a permanent magnet, An electromagnet may be used.

  In the above embodiment, the rotation shaft is driven using a rotation transmission mechanism including a pulley and a rubber belt. However, the rotation shaft may be directly rotated by a motor.

  The present invention is not limited to the plating process of the magnetic pole layer of the induction type write head, but is applied to the plating process of the magnetic film in another magnetic element such as a magnetic recording medium or a magnetic apparatus.

  In addition, the present invention is not necessarily limited to a plating apparatus for a magnetic film, and may be applied to an electroplating process for a nonmagnetic alloy layer such as Cu-Zn. When there is, an alloy layer with little composition variation and little film thickness variation can be formed with good reproducibility.

The detailed features of the present invention will be described again with reference to FIG. 1 again.
Again see Figure 1
(Additional remark 1) The magnetic film plating apparatus provided with the position adjustment mechanism which can change arbitrarily the direction of the applied magnetic field 3 according to at least one shape of the magnetic film formation pattern shape 2 or a magnetic domain shape.
(Supplementary Note 2) A magnetic having a position adjusting mechanism capable of arbitrarily changing the direction of the substrate 1 on which the magnetic film is formed according to at least one of the magnetic film formation pattern shape 2 or the magnetic domain shape. Film plating equipment.
(Supplementary Note 3) A magnet having a position adjusting mechanism capable of arbitrarily changing the stirring direction by the stirring means 6 while maintaining the direction of the substrate 1 on which the magnetic film is formed and the direction of the applied magnetic field 3. Film plating equipment.
(Supplementary note 4) The magnetic film plating apparatus according to supplementary note 3, wherein the stirring operation of the stirring means 6 is a translational operation on a plane parallel to the main surface of the substrate 1 on which the magnetic film is formed.
(Supplementary Note 5) A database that simulates in advance a correlation between at least one of the magnetic film formation pattern shape 2 or the magnetic domain shape, and at least the magnetic film thickness and composition distribution in the magnetic field application direction and the stirring direction, Any one of Supplementary notes 1 to 4, further comprising a position adjusting mechanism that automatically sets the magnetic field application direction and the stirring direction according to at least one of the magnetic film formation pattern shape 2 or the magnetic domain shape of the magnetic film. 2. The magnetic film plating apparatus according to claim 1.
(Supplementary Note 6) The mechanism for applying the magnetic field includes a rotating shaft 7 that rotatably holds the cathode, a bearing 8 that rotatably holds the rotating shaft 7, and a lock mechanism, and the rotating shaft on the bearing 8. 7 and a rotating arm 9 connected in the orthogonal direction, and magnets 4 and 5 fixed to the tip of the rotating arm 9, and the rotational motion is transmitted to the rotating arm 9 only when the bearing 8 is locked. The magnetic film plating apparatus according to any one of appendices 1 to 5, wherein:

  As a practical example of the present invention, the plating process of the upper magnetic pole layer of the induction type write head is typical, but it can be applied to the film forming process of the lower magnetic pole layer or the plating process of other magnetic films. is there.

It is explanatory drawing of the fundamental structure of this invention. It is a schematic block diagram of the magnetic film plating apparatus of Example 1 of this invention. It is a layout view showing an example of a positional relationship in a plating process using the magnetic film plating apparatus of Example 1 of the present invention. It is a layout view showing another example of the positional relationship in the plating process using the magnetic film plating apparatus of Example 1 of the present invention. It is a layout view showing still another example of the positional relationship in the plating process using the magnetic film plating apparatus of Example 1 of the present invention. It is an arrangement | positioning figure which shows another example of the positional relationship in the plating process using the magnetic film plating apparatus of Example 1 of this invention. It is explanatory drawing of the effect at the time of using the magnetic film plating apparatus of Example 1 of this invention. It is explanatory drawing of the Ni composition ratio variation improvement effect at the time of using the magnetic film plating apparatus of Example 1 of this invention. It is explanatory drawing of an example of the database stored in the magnetic film plating apparatus of Example 2 of this invention. It is explanatory drawing of the other example of the database stored in the magnetic film plating apparatus of Example 2 of this invention. It is a schematic block diagram of the conventional magnetic film plating apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate 2 Magnetic film formation pattern shape 3 Applied magnetic field 4 Magnet 5 Magnet 6 Stirring means 7 Rotating shaft 8 Bearing 9 Rotating arm 10 Plating tank 11 Plating tank 12 Overflow tank 13 Permanent magnet 14 Permanent magnet 15 Anode 16 Substrate 17 Substrate fixing jig 18 Auxiliary electrode 19 Stirrer 20 Stirring arm 21 Rotating shaft 22 Bearing 23 Rotating arm 24 Rotation transmission mechanism 25 Motor 26 Plating solution 27 Substrate 41 Plating bath 42 Overflow bath 43 Permanent magnet 44 Permanent magnet 45 Anode 46 Cathode 47 Substrate fixing jig 48 Auxiliary electrode 49 Stirrer 50 Stirring arm 51 Plating solution

Claims (5)

A magnetic film plating apparatus comprising a position adjusting mechanism capable of arbitrarily changing the direction of an applied magnetic field according to at least one of a magnetic film formation pattern shape and a magnetic domain shape. A magnetic film plating apparatus comprising a position adjusting mechanism capable of arbitrarily changing a direction of a substrate on which a magnetic film is formed according to at least one of a magnetic film formation pattern shape and a magnetic domain shape. A magnetic film plating apparatus comprising a position adjusting mechanism capable of arbitrarily changing a stirring direction by a stirring means while maintaining a direction of a substrate on which a magnetic film is formed and a direction of an applied magnetic field. 4. The magnetic film plating apparatus according to claim 3, wherein the stirring operation of the stirring means is a translational operation on a plane parallel to the main surface of the substrate on which the magnetic film is formed. A database simulating in advance a correlation between at least one of the magnetic film formation pattern shape or the magnetic domain shape and at least the magnetic film thickness and composition distribution in the magnetic field application direction and the stirring direction; 5. The position adjusting mechanism according to claim 1, further comprising a position adjusting mechanism that automatically sets the magnetic field application direction and the stirring direction according to at least one of a formation pattern shape and a magnetic domain shape. Magnetic film plating equipment.

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