JP2005277403A5 - - Google Patents
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- JP2005277403A5 JP2005277403A5 JP2005048298A JP2005048298A JP2005277403A5 JP 2005277403 A5 JP2005277403 A5 JP 2005277403A5 JP 2005048298 A JP2005048298 A JP 2005048298A JP 2005048298 A JP2005048298 A JP 2005048298A JP 2005277403 A5 JP2005277403 A5 JP 2005277403A5
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- JP
- Japan
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005048298A JP4999278B2 (ja) | 2004-02-24 | 2005-02-24 | 窒化ガリウム系化合物半導体発光素子 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004048538 | 2004-02-24 | ||
| JP2004048538 | 2004-02-24 | ||
| JP2005048298A JP4999278B2 (ja) | 2004-02-24 | 2005-02-24 | 窒化ガリウム系化合物半導体発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005277403A JP2005277403A (ja) | 2005-10-06 |
| JP2005277403A5 true JP2005277403A5 (ja) | 2008-02-21 |
| JP4999278B2 JP4999278B2 (ja) | 2012-08-15 |
Family
ID=35176667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005048298A Active JP4999278B2 (ja) | 2004-02-24 | 2005-02-24 | 窒化ガリウム系化合物半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4999278B2 (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100662191B1 (ko) | 2004-12-23 | 2006-12-27 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| JP2011146639A (ja) | 2010-01-18 | 2011-07-28 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物系半導体素子 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4018177B2 (ja) * | 1996-09-06 | 2007-12-05 | 株式会社東芝 | 窒化ガリウム系化合物半導体発光素子 |
| JP3365607B2 (ja) * | 1997-04-25 | 2003-01-14 | シャープ株式会社 | ＧａＮ系化合物半導体装置及びその製造方法 |
| JPH11220168A (ja) * | 1998-02-02 | 1999-08-10 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体素子及びその製造方法 |
| JP2000058911A (ja) * | 1998-08-13 | 2000-02-25 | Toshiba Corp | 半導体発光装置 |
| JP3795298B2 (ja) * | 2000-03-31 | 2006-07-12 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法 |
| JP4167833B2 (ja) * | 2002-01-24 | 2008-10-22 | 株式会社ユーテック | 成膜装置、酸化物薄膜成膜用基板及びその製造方法 |
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2005
- 2005-02-24 JP JP2005048298A patent/JP4999278B2/ja active Active