JP2005251867A - Processor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus that can always keep a gas pressure nearly uniform in a chamber during the formation of thin film in case when the thin film is formed on an object to be processed while gases to be supplied into the chamber are changed. <P>SOLUTION: The processor is provided with a process chamber 1 wherein an object to be processed is housed, supply pipes 3a-3c to supply a material gas into the process chamber, high-speed valves G-HSV 9a-9c provided to the gas supply pipe; a gas discharge pipe 10 to discharge a gas in the process chamber; a throttle valve 11 provided to the gas discharge pipe; bypass pipes 12a-12c to connect the upstream of the G-HSV of the gas supply pipe and the gas discharge pipe; high-speed valves B-HSV 13a-13c provided to the bypass pipe; and a controller 14 that controls opening/closing of the G-HSV, blocks the G-HSV when the G-HSV is open, and opens the B-HSV when the G-HSV is closed. The G-HSV and the B-HSV open and close at equivalent reaction speed when they are given an instruction by the controller. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a processing apparatus for forming a thin film on an object to be processed using a chemical reaction.

  2. Description of the Related Art Processing apparatuses that form a thin film on a target object using a chemical reaction are known. Some of these processing apparatuses form a plurality of thin films in one process chamber by switching and supplying a plurality of types of gases into a process chamber serving as a processing chamber (for example, Patent Document 1). reference.).

  FIG. 4 shows an example of a conventional processing apparatus.

  As shown in FIG. 4, in this processing apparatus, the gas supplied into the process chamber 103 is controlled by opening and closing the first to third high speed valves 101a to 101c and the first to third air function valves 102a to 102c. Is switched.

  For example, if the first high speed valve 101a and the second and third air function valves 102b and 102c are opened and the second and third high speed valves 101b and 101c and the first air function valve 102a are closed, the first to first Of the first to third gases supplied from the three gas supply tubes 104 a to 104 c, only the first gas supplied from the first gas supply tube 104 a flows into the process chamber 103.

  At this time, the second gas and the third gas supplied from the second and third gas supply pipes 104b and 104c are discharged from the gas discharge pipe 106 via the first and second bypass pipes 105b and 105c.

  That is, in this processing apparatus, the first gas to the third gas supplied from the first to third gas supply pipes 104a to 104c are continuously flown to prevent the flow of the first gas to the third gas from being delayed. doing.

  This prevents the first gas to third gas, which have become high pressure due to stagnation in the first to third gas supply pipes 104a to 104c, from flowing into the process chamber 103 at the start of gas supply. ing.

Further, the mass flow meter 107 reacts to a rapid flow rate fluctuation in the first to third gas supply pipes 104a to 104c generated at the start of gas supply, so that the gas pressure in the process chamber 103 changes. It is preventing.
Japanese Patent Laid-Open No. 2002-367992

  The first to third air function valves 102a to 102c provided in the first to third bypass pipes 105a to 105c operate slower than the first to third high speed valves 101a to 101c. The opening / closing operation of the third high speed valves 101a to 101c may not match the opening / closing operation of the first to third air function valves 102a to 102c.

  In such a case, when the gas is switched, a stagnation occurs in the gas flow, and the gas pressure in the process chamber 103 may fluctuate during the formation of the thin film.

  In particular, when a film forming method in which gas is switched many times per second, such as ALD (Atomic Layer Deposition), which has recently been attracting attention, the next gas is used before the gas pressure in the process chamber 103 is stabilized. In other words, the thickness of the thin film formed on the object to be processed is not uniform, and a thin film having a required function may not be obtained.

  The present invention has been made in view of the above circumstances, and the object of the present invention is to sequentially form a thin film on an object to be processed by supplying a plurality of types of gases to the chamber while switching. Another object of the present invention is to provide a processing apparatus capable of maintaining the gas pressure in the chamber at a substantially constant level during film formation.

  In order to solve the above problems and achieve the object, the processing apparatus of the present invention is configured as follows.

(1) A chamber in which an object to be processed is accommodated, a gas supply pipe for supplying a raw material gas into the chamber, a gas supply pipe on / off valve provided in the gas supply pipe, and a gas for discharging the gas in the chamber A discharge pipe, a throttle valve provided in the gas discharge pipe, a bypass pipe connecting the gas supply pipe upstream of the gas supply pipe on-off valve and the gas discharge pipe, and a bypass provided in the bypass pipe A pipe opening / closing valve and the gas supply pipe opening / closing valve are controlled to be opened / closed, the bypass pipe opening / closing valve is closed when the gas supply pipe opening / closing valve is opened, and the bypass pipe opening / closing valve is closed when the gas supply pipe opening / closing valve is closed. The gas supply pipe opening / closing valve and the bypass pipe opening / closing valve are opened / closed at an equivalent reaction speed with respect to a command from the control means.

(2) The processing apparatus according to (1), wherein the throttle valve is provided upstream of a connection portion between the gas discharge pipe and the bypass pipe.

(3) The processing apparatus according to (1), wherein the control means creates a time during which the gas supply pipe on-off valve and the bypass pipe on-off valve are both open or closed, and adjusts the time. It is possible to do.

(4) The processing apparatus according to (1), further comprising an auxiliary chamber provided at a connection portion between the gas supply pipe and the bypass pipe and communicating with the gas supply pipe and the bypass pipe. It is characterized by.

(5) The processing apparatus according to (1), wherein the object to be processed is a semiconductor substrate.

  According to the present invention, when a plurality of thin films are sequentially formed on a target object by supplying a plurality of types of gases to the chamber while switching, the pressure in the chamber is always constant during the formation of the thin film. Can be maintained.

  The best mode for carrying out the present invention will be described below with reference to the drawings.

  First, a first embodiment of the present invention will be described with reference to FIG.

  FIG. 1 is a schematic view of a processing apparatus according to the first embodiment of the present invention.

  As shown in FIG. 1, this semiconductor manufacturing apparatus has a process chamber 1 that accommodates an object to be processed such as a semiconductor substrate. The process chamber 1 includes a pressure sensor 2 for detecting an internal pressure on the outer peripheral surface, and first to third gas supply pipes 3a to 3c are connected to the upper surface.

  These first to third gas supply pipes 3a to 3c are for supplying the first gas to the third gas into the process chamber 1, respectively, and the first to third gases are sequentially provided from the upstream side of the gas flow. Mechanical regulators 4a to 4c, first to third pressure sensors 5a to 5c, first to third upstream side on-off valves 6a to 6c, first to third mass flow controllers (hereinafter referred to as "first to third MFC"). ) 7a to 7c, first to third downstream opening / closing valves 8a to 8c, and first to third gas supply pipe side high speed valves (hereinafter referred to as "first to third G-HSV") 9a to 9c. I have.

  A gas exhaust pipe 10 is connected to the lower surface of the process chamber 1. The gas exhaust pipe 10 is for exhausting residual gas in the process chamber 1 and includes a throttle valve 11 in the middle thereof.

  The first to third gas supply pipes 3a to 3c are provided between the first to third downstream open / close valves 8a to 8c and the first to third G-HSVs 9a to 9c, respectively. After the process chamber 1 is bypassed and the process chamber 1 is bypassed, the gas exhaust pipe 10 is joined between the process chamber 1 and the throttle valve 11.

  The first to third bypass pipes 12a to 12c are first to third bypass pipe side high speed valves (hereinafter referred to as “first to third B-HSV”) having the same configuration as the first to third G-HSVs 9a to 9c, respectively. And 13a-13c.

  The first to third MFCs 7a to 7c, the first to third G-HSVs 9a to 9c, and the first to third B-HSVs 13a to 13c are connected to the control device 14, respectively. Open / close control and flow rate control are performed respectively.

  By the way, what is important in the present invention is that the first to third G-HSVs 9a to 9c and the first to third B-HSVs 13a to 13c have the same configuration. Thus, the first to third G-HSVs 9a to 9c and the first to third B-HSVs 13a to 13c can be opened and closed at an equivalent reaction speed with respect to the command from the control device 14.

  Next, an operation when the semiconductor manufacturing apparatus having the above configuration is used will be described.

  When using this semiconductor manufacturing apparatus, the first to third downstream opening / closing valves 8a to 8c are always opened and the first to third gases are kept flowing.

  First, the first G-HSV 9a and the second and third B-HSVs 13b and 13c are opened, and the first B-HSV 13a and the second and third G-HSVs 9b and 9c are closed. Thereby, the first gas is supplied from the first gas supply pipe 3a into the process chamber 1, and a thin film is formed on the object to be processed. At this time, the second and third gases supplied from the second and third gas supply pipes 3b and 3c are both discharged from the gas discharge pipe 10 via the second and third bypass pipes 12b and 12c.

  When switching the gas supplied to the process chamber 1 from the first gas to the second gas, the first B-HSV 13a is opened simultaneously with closing the first G-HSV 9a. Thus, the first gas supplied from the first gas supply pipe 3a is discharged from the gas discharge pipe 10 through the first bypass pipe 12a.

  Next, simultaneously with opening the second G-HSV 9b, the second B-HSV 13b is closed. As a result, the second gas discharged from the gas discharge pipe 10 through the second bypass pipe 12b is supplied into the process chamber 1. As described above, the gas supplied to the process chamber 1 is switched from the first gas to the second gas.

  The gas supplied to the process chamber 1 is a first gas to a third gas, a second gas to a third gas, a third gas to a first gas, a third gas to a second gas, and a second gas to a first gas. When switching to, the same procedure as described above is performed.

  According to the semiconductor manufacturing apparatus having the above configuration, the first to third G-HSVs 9a to 9c and the first to third B-HSVs 13a to 13c have the same configuration.

  Therefore, the first to third G-HSVs 9a to 9c and the first to third B-HSVs 13a to 13c can be opened and closed at substantially the same reaction speed with respect to the command from the control device 14, so the gas supplied into the process chamber 1 When switching, the timings of the opening and closing operations of the first to third G-HSVs 9a to 9c and the opening and closing operations of the first to third B-HSVs 13a to 13c can be matched substantially exactly. As a result, the pressure in the process chamber 1 can be kept substantially constant throughout the formation of the thin film, so that a homogeneous and high-quality thin film can be formed on the object to be processed.

  Further, with such a configuration, the gas flow in the process chamber 1 does not change abruptly, so that dust is hardly generated in the process chamber 1.

  Furthermore, the theoretical analysis of film formation becomes easy, and furthermore, correct production management can be performed.

  Moreover, it is possible to suppress the occurrence of non-uniform chemical reaction in the process chamber 1 due to the deviation of the gas flow.

  Further, the throttle valve 11 is provided on the downstream side of the connection portion between the first to third bypass pipes 12 a to 12 c and the gas discharge pipe 10.

  Therefore, the pressure on the upstream side and the downstream side of the first to third bypass pipes 12a to 12c can be kept substantially constant, so that the gas can be switched smoothly.

  Next, a second embodiment of the present invention will be described with reference to FIG. Here, the description of the same configuration and operation as those in the above embodiment is omitted.

  FIG. 2 is a timing chart for performing surge prevention control according to the second embodiment of the present invention.

  As shown in FIG. 2, in the present embodiment, the control device 14 shifts the timing of the opening and closing operations of the first to third G-HSVs 9 a to 9 c to thereby change the first to third G-HSVs 9 a to 9 c and the first to first G-HSVs 9 a to 9 c. The time during which the 3B-HSVs 13a to 13c are both open or closed can be adjusted.

  Therefore, the opening / closing timings of the first to third G-HSVs 9a to 9c and the first to third B-HSVs 13a to 13c can be adjusted to the optimum timings according to the film forming conditions. More uniform and high-quality film formation can be performed.

  Next, a third embodiment of the present invention will be described with reference to FIG. Here, the description of the same configuration and operation as those in the above embodiment is omitted.

  FIG. 3 is a schematic view of a semiconductor manufacturing apparatus according to the third embodiment of the present invention.

  As shown in FIG. 3, in the present embodiment, auxiliary chambers 31 are provided at the connection portions of the first to third gas supply pipes 3 a to 3 c and the first to third bypass pipes 12 a to 12 c, respectively.

  The auxiliary chamber 31 communicates with the first to third gas supply pipes 3a to 3c and the first to third bypass pipes 12a to 12c, and the first to third gas supply pipes 3a to 3c, And the pressure surge which generate | occur | produces in the 1st-3rd bypass pipes 12a and 12c can be absorbed.

  Therefore, since the pressure in the process chamber 1 can be kept more uniform during the formation of the thin film, a more uniform and high-quality film can be formed on the object to be processed.

  Note that the present invention is not used only for forming a thin film on an object to be processed. That is, as long as two or more kinds of gases are switched and used, the present invention can also be applied to, for example, etching. Moreover, it is not limited to a semiconductor manufacturing apparatus.

  Finally, the present invention is not limited to the above-described embodiments as they are, and can be embodied by modifying the constituent elements without departing from the scope of the invention in the implementation stage. Further, various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the embodiment. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, you may combine suitably the component covering different embodiment.

  Specifically, in the present embodiment, an example using three types of gas is described, but the number is not limited as long as it is a plurality of types of gas.

1 is a schematic view of a semiconductor manufacturing apparatus according to a first embodiment of the present invention. The timing diagram for performing the surge prevention control which concerns on the 2nd Embodiment of this invention. Schematic of the principal part of the semiconductor manufacturing apparatus which concerns on the 3rd Embodiment of this invention. Schematic of conventional semiconductor manufacturing.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Process chamber (chamber), 3a-3c ... 1st-3rd gas supply pipe (gas supply pipe), 9a-9c ... 1st-3rd gas supply pipe side high speed valve (gas supply pipe on-off valve), DESCRIPTION OF SYMBOLS 10 ... Gas exhaust pipe, 11 ... Throttle valve, 12a-12c ... 1st-3rd bypass pipe (bypass pipe), 13a-13c ... 1st-3rd bypass pipe side high speed valve (bypass pipe on-off valve), 14 ... control device (control means), 31 ... auxiliary chamber.

Claims (5)

A chamber in which an object is accommodated;
A gas supply pipe for supplying a source gas into the chamber;
A gas supply pipe opening / closing valve provided in the gas supply pipe;
A gas exhaust pipe for exhausting the gas in the chamber;
A throttle valve provided in the gas discharge pipe;
A bypass pipe that bypasses the upstream side of the gas supply pipe on-off valve of the gas supply pipe and the gas discharge pipe;
A bypass pipe opening / closing valve provided in the bypass pipe;
Control means for controlling the opening and closing of the gas supply pipe opening and closing valve, closing the bypass pipe opening and closing valve when the gas supply pipe opening and closing valve is opened, and opening the bypass pipe opening and closing valve when the gas supply pipe opening and closing valve is closed; ,
Comprising
The processing apparatus according to claim 1, wherein the gas supply pipe opening / closing valve and the bypass pipe opening / closing valve are opened / closed at a reaction speed equivalent to a command from the control means.   The processing apparatus according to claim 1, wherein the throttle valve is provided upstream of a connection portion between the gas discharge pipe and the bypass pipe.   2. The processing apparatus according to claim 1, wherein the control means creates a time during which the gas supply pipe on-off valve and the bypass pipe on-off valve are both open or closed, and can adjust the time.   The processing apparatus according to claim 1, further comprising an auxiliary chamber provided at a connection portion between the gas supply pipe and the bypass pipe and communicating with the gas supply pipe and the bypass pipe.   The processing apparatus according to claim 1, wherein the object to be processed is a semiconductor substrate.

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