JP2005243871A - Organic thin film light emitting transistor and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve light emitting efficiency and also control a leakage current between a source and a gate without reflection by a gate electrode of a light beam emitted from a light emitting layer. <P>SOLUTION: A first electrode 2 composed of a light transmissive material is formed on a substrate 1. A first insulator layer 6, a third electrode 4 composed of the light transmissive material, and a laminated layer material composed of a second insulator layer 7 are formed on the first electrode 2. A third insulator layer 8 is formed on the side surface of the laminated layer material. An organic semiconductor layer 5 is formed over the laminated layer material. Moreover, a light emitting layer 9 and a second electrode 3 composed of an organic material are formed on the organic semiconductor layer 5. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention provides an organic thin film light emitting transistor in which a light emitting layer made of an organic electroluminescent material is provided in an organic thin film layer of an organic thin film transistor using an organic substance, and ON / OFF of light emission is controlled by switching operation of the transistor, and It relates to a manufacturing method.

  Thin film transistors (TFTs) are widely used as switching elements for display devices. Conventionally, TFTs have been made using amorphous or polycrystalline silicon. However, a CVD apparatus used for producing a TFT using such silicon is very expensive, and there is a problem that an increase in size of a display apparatus using a TFT is accompanied by a significant increase in manufacturing cost. In addition, since the process of forming amorphous or polycrystalline silicon is performed at an extremely high temperature, there are limitations on materials that can be used as a substrate, and a lightweight resin substrate cannot be used. TFTs using organic substances have been proposed as means for solving these problems. Vacuum deposition and coating methods, which are film formation methods used when forming TFTs with organic substances, are easy to increase in size and can be realized at low cost, and because the process temperature is low, the material used as the substrate is selected. There is an advantage that there are few restrictions at the time, and the practical application of TFTs using organic substances is expected. In fact, TFTs using organic substances have been actively reported in recent years, and there are many reports (for example, Non-Patent Document 1, Non-Patent Document 2, Non-Patent Document 3, Non-Patent Document 4, Non-patent). Document 5, Non-patent document 6, Non-patent document 7, Non-patent document 8, Non-patent document 9, Non-patent document 10, Non-patent document 11, Non-patent document 12, Non-patent document 13, Non-patent document 14, Non-patent Reference 15 and Patent Document 1). Examples of organic substances used in the organic compound layer of the TFT include multimers such as conjugated polymers and thiophenes (see, for example, Patent Document 2, Patent Document 3, Patent Document 4, Patent Document 5, and Patent Document 6), or metal phthalocyanine compounds ( For example, Patent Document 7) and condensed aromatic hydrocarbons such as pentacene (see, for example, Patent Document 8 and Patent Document 9) are used in the form of a simple substance or a mixture with other compounds.

  Such organic TFTs include a horizontal type in which carriers move in the horizontal direction and a vertical type in which carriers move in the vertical direction. 8 and 9 are cross-sectional views showing structures of conventional horizontal organic TFTs and vertical organic TFTs, respectively. As shown in FIG. 8, in the horizontal organic TFT, a third electrode 4 as a gate electrode is provided on a substrate 1, and a first electrode 2 and a second electrode 3 are provided thereon via a gate insulating film 13. And an organic semiconductor layer 5 serving as an active layer is provided between the electrodes. As shown in FIG. 9, the vertical organic TFT has a first organic semiconductor layer 5-1 formed on a first electrode 2 formed on a substrate 1, and a third electrode 4 formed thereon. Then, the second organic semiconductor layer 5-2 is formed, and the second electrode 3 is formed thereon.

An organic thin-film light-emitting transistor in which a light-emitting layer made of an organic electroluminescent material is provided in an organic thin-film layer of a transistor using such an organic substance and ON / OFF of light emission is controlled by the switching operation of the transistor includes an inorganic TFT and an organic thin-film transistor. Compared to the combination of electroluminescent (EL) elements, both TFT and light emitting part can be formed in a consistent organic thin film deposition process, so the process can be simplified and cost reduction can be expected. Therefore, it is promising as a light emitting element for a thin self light emitting display device. For example, Patent Document 10 discloses an organic thin film light emitting transistor in which an organic semiconductor layer and a light emitting layer of an organic TFT having an electrostatic induction TFT structure are formed of the same compound. Patent Document 11 discloses an organic thin film light emitting transistor in which a light emitting layer function is added to an organic semiconductor layer of an organic TFT having a lateral MOS structure.
FIG. 10 is a cross-sectional view showing a configuration of a conventional organic thin film light emitting transistor in which an organic semiconductor layer having a static induction TFT structure and a light emitting layer are made of different compounds. This conventional organic thin-film light-emitting transistor has a light-emitting layer 9 made of an organic material disposed between the second organic semiconductor layer 5-2 and the second electrode 3 of the vertical organic TFT shown in FIG. is there.

  Among organic TFTs and organic thin-film light-emitting transistors that have been actively researched in this way, those having a vertical organic TFT structure in which carriers move in the film thickness direction of the organic thin film (for example, Patent Document 12, Patent Document 13, Non-Patent Document 14) has a shorter channel length than a TFT element of a type in which carriers move in the surface direction of an organic thin film as typified by the structure shown in FIG. It has the feature of excellent high-speed response. Among vertical organic TFTs, a transistor having a static induction transistor (SIT) structure has conventionally been provided with an organic semiconductor layer in which a gate electrode (third electrode 4) is embedded as a source electrode (first electrode) as shown in FIG. 1 electrode 2) and a drain electrode (second electrode 3). In this structure, a part of the source electrode is opposed to the gate electrode, and not only the part of the source electrode facing the gate electrode does not work effectively but also the gate-source leakage current is large, and the transistor on / off ratio is high. It was a cause of lowering. In addition, in order to create the structure of FIG. 9, a gate electrode must be formed on the first organic semiconductor layer after the first organic semiconductor layer is formed, and the gate electrode is low due to the low heat resistance of the material used for the organic semiconductor layer. In addition, there is a problem that a material and a process for forming an insulating film surrounding the gate electrode are greatly limited. Since an appropriate gate electrode material cannot be selected or a gate insulating film having sufficient insulation cannot be formed, the on / off ratio of the transistor remains low, and an organic thin film light emitting transistor with sufficient performance can be obtained. It wasn't. As a means for solving this problem, a method has been proposed in which the interface where the gate electrode and the organic semiconductor layer are in contact with each other is covered with an insulating layer (for example, see Patent Document 14). However, when forming the insulator layer provided between the gate electrode and the organic semiconductor layer, the metal used for the gate electrode is selectively oxidized to the gate electrode portion unless the metal is used to form the insulator layer by oxidation. Insulator layers cannot be formed at the same time, so that the effective source electrode area is reduced by the insulator layer formed in an unnecessary place, the current that can be injected into the device is lowered, and the maximum luminance is lowered. there were.

  Further, when an organic thin film light emitting transistor is formed using a conventional SIT structure, as shown in FIG. 10, the light generated in the light emitting layer and the reflected light from the back electrode (second electrode 3) are caused by the gate electrode. Since it is shielded, only a part of it is taken out to the outside, and there is a problem that the light emission efficiency is lowered. As a method for solving this problem, a method using a light-transmitting conductor as the gate electrode is conceivable. However, since the light-transmitting conductor has a high process temperature at the time of formation, the organic semiconductor layer is prevented from being deteriorated during film formation. However, sufficient performance was not obtained.

JP 2003-101104 A JP-A-8-228034 JP-A-8-228035 Japanese Patent Laid-Open No. 9-232589 Japanese Patent Laid-Open No. 10-125924 Japanese Patent Laid-Open No. 10-190001 JP 2000-174277 A JP-A-5-55568 JP 2001-94107 A Japanese Patent Laid-Open No. 2003-188793 JP 2003-282256 A JP 2003-124472 A JP 2003-115624 A JP 2003-209122 A F. Ebisawa et al., Journal of Applied Physics, 54, 3255, 1983 A. Assadi et al., Applied Physics Letter, 53, 195, 1988 G. Guillaud et al., Chemical Physics Letter, 167, 503, 1990 X. Peng et al., Applied Physics Letter, 57, 2013, 1990 G. Horowitz et al., Synthetic Metals, 41-43, 1127, 1991 S. Miyauchi et al., Synthetic Metals, 41-43, 1991 H. Fuchigami et al., Applied Physics Letter, 63, 1372, 1993 H. Koezuka et al., Applied Physics Letter, 62, 1794, 1993 F. Garnier et al., Science, 265, 1684, 1994 A. R. Brown et al., Synthetic Metals, 68, 65, 1994 A. Dodabalapur et al., Science, 268, 270, 1995 T. Sumimoto et al., Synthetic Metals, 86, 2259, 1997 K. Kudo et al., Thin Solid Films, 331, 51, 1998 K. Kudo et al., Synthetic Metals, 102, 900, 1999 K. Kudo et al., Synthetic Metals, 111-112, 11 pages, 2000

  An object of the present invention is to solve the above-described problems of the prior art, and firstly, the object is to prevent light emitted from the light emitting layer from being blocked by the gate electrode. . Secondly, the on / off ratio of the transistor is increased by reducing the leakage current between the source and the gate. Thirdly, an unnecessary insulating film is not formed around the gate electrode so that the effective source electrode area is not reduced. Fourthly, an inorganic film forming step is not inserted during the formation of the organic film. Fifth, there is no need to perform a film forming process at a high temperature on the organic film.

  In order to achieve the above object, according to the present invention, a first electrode and a second electrode separated from each other, an organic thin film layer including at least a light emitting layer and an organic semiconductor layer sandwiched between and in contact with each other, And a third electrode made of a light-transmitting conductor that exists in the organic semiconductor layer apart from both of the second electrode and the second electrode, and the first and second electrodes are applied by a voltage applied to the third electrode. A first insulator layer having a static induction transistor structure for controlling a current flowing between the electrodes, wherein the third electrode and the organic semiconductor layer are formed below the bottom surface of the third electrode; The first and second electrodes are separated by a second insulator layer formed on the upper surface of the third electrode and a third insulator layer covering a side surface of the third electrode. The first electrode formed in the same pattern as the third electrode. The organic thin film light-emitting transistor, characterized by being filled by an edge layer, is provided.

Moreover, in order to achieve said objective, according to this invention, manufacture of the organic thin film light emitting transistor in which the organic thin film layer containing the light emitting layer and the organic-semiconductor layer was formed between the 1st electrode and the 2nd electrode A method,
(1) A first insulator layer, a third conductor layer made of a light-transmitting conductor, and a second insulator layer are sequentially deposited on the first conductor layer to be the first electrode. Process,
(2) A step of patterning the second insulator layer, the third conductor layer, and the first insulator layer to form a third electrode sandwiched between the first and second insulator layers. When,
(3) forming a third insulator layer covering the side surface of the third electrode;
(4) depositing an organic semiconductor layer covering the first electrode and the second insulator layer;
There is provided an organic thin film light emitting transistor characterized by comprising:

Moreover, in order to achieve said objective, according to this invention, the organic thin film light emitting transistor by which the organic thin film layer containing the light emitting layer and the organic-semiconductor layer was formed between the 1st electrode and the 2nd electrode of the manufacturing method A manufacturing method of
(1) sequentially depositing a first insulator layer and a third conductor layer made of a light-transmitting conductor on the first conductor layer to be the first electrode;
(2) patterning the third conductor layer and the first insulator layer to form a third electrode placed on the first insulator layer;
(3) forming a third insulator layer covering the upper surface and side surfaces of the third electrode;
(4) depositing an organic semiconductor layer covering the first electrode and the third insulator layer;
A method for producing an organic thin film light-emitting transistor characterized by comprising:

According to the present invention, since the third electrode serving as the gate electrode is formed from the light-transmitting conductor layer, the light generated in the light-emitting layer and the reflected light from the second electrode are transmitted by the gate electrode. The light is not shielded and light emission with high efficiency can be realized. Then, the first electrode and the third electrode, which serve as the source electrode, are filled with an insulating layer, and the third electrode and the organic semiconductor layer are separated by an insulating film. , Leakage current between the gate and the source is suppressed, and a high on / off ratio is realized.
In addition, according to the present invention, since the gate electrode can be formed before the organic thin film layer is formed, the degree of freedom in selecting the process of forming the light-transmitting conductor and insulator layer is greatly increased. It becomes possible to form electrodes, a gate insulating film and an organic thin film layer with high quality, and a highly efficient and high performance organic thin film light emitting transistor can be obtained. In addition, by forming the gate electrode and the gate insulating film before forming the organic thin film layer, the organic thin film layer can be formed by a single film forming process. Destabilization of device performance due to the formation can be prevented, and a highly stable device can be obtained. Further, by forming the first insulator layer and the second insulator layer in the same pattern as the third electrode, it is possible to keep the formation area of the insulator layer to a minimum, and an effective source electrode The area is not reduced, and a high-intensity organic thin film light-emitting transistor can be provided.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, the organic thin-film light-emitting transistor of the present invention and the manufacturing method thereof will be described in detail with reference to the drawings.
FIG. 1 is a cross-sectional view showing the structure of an organic thin film light emitting transistor according to a first embodiment of the present invention. As shown in FIG. 1, a first electrode 2 is formed on a substrate 1, and a stacked layer including a first insulator layer 6, a third electrode 4, and a second insulator layer 7 is formed thereon. A third insulator layer 8 is formed on the side surface of the laminate. An organic semiconductor layer 5 is formed so as to cover the laminated body, and a light emitting layer 9 and a second electrode 3 made of an organic material are formed on the organic semiconductor layer 5.

  FIG. 2 is a cross-sectional view showing the structure of an organic thin film light emitting transistor according to the second embodiment of the present invention. In FIG. 2, the same reference numerals are given to the same parts as those of the first embodiment shown in FIG. 1, and the duplicate description will be omitted (the same applies to the other embodiments). The difference of the present embodiment from the first embodiment is that the third insulator layer 8 is formed only on the side surface of the third electrode 4.

  FIG. 3 is a cross-sectional view showing the structure of an organic thin film light emitting transistor according to a third embodiment of the present invention. The second embodiment is different from the second embodiment shown in FIG. 2 in that the second insulator layer 7 is removed, and the third insulator layer 8 is disposed on the side surface of the third electrode 4 and It is a point formed so as to cover the entire upper surface.

  FIG. 4 is a sectional view showing the structure of an organic thin film light emitting transistor according to a fourth embodiment of the present invention. The present embodiment is different from the first embodiment shown in FIG. 1 in that an electron transport layer 10 is inserted between the light emitting layer 9 and the second electrode 3.

FIG. 5 is a sectional view showing the structure of an organic thin film light emitting transistor according to a fifth embodiment of the present invention. A difference of the present embodiment from the fourth embodiment shown in FIG. 4 is that a hole transport layer 11 is inserted between the organic semiconductor layer 5 and the light emitting layer 9, and the light emitting layer 9 and the electron transport are transported. The hole blocking layer 12 is inserted between the layers 10.
The electron transport layer 10 and the hole blocking layer 12 can be omitted from the fifth embodiment.
Further, an electron injection layer may be used instead of the electron transport layer 10. Alternatively, an electron injection layer may be formed in addition to the electron transport layer 10. Alternatively, an electron transport / injection layer having both electron injection and electron transport functions may be used.
Further, a hole injection layer may be used in place of the hole transport layer 11. Alternatively, a hole injection layer may be formed in addition to the hole transport layer 11. Alternatively, a hole transport / injection layer having functions of both hole injection and hole transport may be used.
Instead of the hole blocking layer 12, an exciton blocking layer for confining excitons formed by recombination in the light emitting layer may be used. Alternatively, an exciton blocking layer may be formed in addition to the hole blocking layer 11. Alternatively, a hole / exciton blocking layer having functions of both hole blocking and exciton blocking may be used.

  Next, a manufacturing method of the first embodiment shown in FIG. 1 will be described with reference to FIGS. First, a conductive material such as ITO is deposited on the substrate 1 to form the first electrode 2 (FIG. 6A). Next, an insulating material is deposited to form a first insulator layer 6 (FIG. 6B), and then a light-transmissive conductive material such as ITO is deposited to form an electrode material layer 4a. An insulating material is deposited to form the second insulator layer 7 (FIG. 6C). Next, the second insulator layer 7, the electrode material layer 4a, and the first insulator layer 6 are patterned by photolithography and RIE to form the third electrode 4 sandwiched between the insulator layers. [FIG. 6D]. Next, a third insulator layer 8 is formed on the side surfaces of the third electrode 4 and the like by depositing an insulating material and anisotropic RIE [FIG. 7E]. Subsequently, the organic semiconductor layer 5, the light emitting layer 9, and the second electrode 3 are sequentially deposited and patterned to obtain the organic thin film light emitting transistor of the first embodiment (FIG. 7F).

  In the step of forming the third insulator layer 8 shown in FIG. 7E, the deposition is performed with the substrate surface inclined with respect to the radiation direction of the deposit, instead of the method of depositing the insulating material and anisotropic etching. It is also possible to perform oblique vacuum deposition or oblique sputtering. At this time, the substrate may be rotated. Further, a thin film for lift-off is formed on the first electrode 2 or the second insulator layer 7 before performing oblique vacuum deposition or oblique sputtering, and the lift-off thin film is deposited after depositing the insulator layer. May be removed.

  FIG. 7E 'is a cross-sectional view for explaining the manufacturing method of the second embodiment shown in FIG. After the steps up to FIG. 6D are completed, the third insulating layer 8 is formed by dipping in an electrodeposition solution and performing electrodeposition using the counter electrode as a cathode and the third electrode 4 as an anode. . Subsequent processes are the same as those in the first embodiment.

The substrate 1 may be formed of any material, whether inorganic or organic, as long as it is light transmissive.
Materials used for the first and second electrodes of the present invention include indium tin oxide (ITO), tin oxide (NESA), gold, silver, platinum, copper, indium, aluminum, magnesium, magnesium-indium alloy, magnesium -In addition to metals and alloys such as aluminum alloys, aluminum-lithium alloys, aluminum-scandium-lithium alloys, and magnesium-silver alloys, organic materials such as conductive polymers are not limited thereto. In addition to ITO and NESA described above, indium zinc oxide (IZO) can be used as the light-transmitting conductor used for the third electrode of the present invention. Sufficient light transmission with a transmittance of 70% or more is possible. However, it is not limited to this as long as it has sufficient conductivity and sufficient conductivity. As the first to third material used for the insulating layer of the present _invention, SiO 2, SiNx, an inorganic insulator or an insulating polymer such as alumina and the like, but is not limited thereto.

  Moreover, the organic-semiconductor material used for the organic-semiconductor layer in the organic thin-film layer of this invention can use what is normally a material used for an organic thin-film transistor. Examples thereof include compounds represented by the general formulas [Chemical Formula 1] to [Chemical Formula 7] and substituted or unsubstituted aromatic hydrocarbons having 14 to 34 carbon atoms, but are not limited thereto.

(Wherein R1 to R6 each independently represents a hydrogen atom, a halogen atom, a hydroxyl group, a substituted or unsubstituted amino group, a nitro group, a cyano group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, Substituted or unsubstituted cycloalkyl group, substituted or unsubstituted alkoxy group, substituted or unsubstituted aromatic hydrocarbon group, substituted or unsubstituted aromatic heterocyclic group, substituted or unsubstituted aralkyl group, substituted or unsubstituted Represents a substituted aryloxy group, a substituted or unsubstituted alkoxycarbonyl group, or a carboxyl group, and R1 to R6 may form a ring with two of them, and L1 is a substituted or unsubstituted group. Alkyl group, substituted or unsubstituted alkenyl group, substituted or unsubstituted cycloalkyl group, substituted or unsubstituted Represents a substituted aromatic hydrocarbon group, a substituted or unsubstituted aromatic heterocyclic group, a substituted or unsubstituted aralkyl group, n is an integer of 1 to 3, and m is an integer represented by 0 to 2. M represents an (n + m) -valent metal ion.)

Wherein R ^{7 to} R ¹⁸ are each independently a hydrogen atom, halogen atom, hydroxyl group, substituted or unsubstituted amino group, nitro group, cyano group, substituted or unsubstituted alkyl group, substituted or unsubstituted alkenyl. Group, substituted or unsubstituted cycloalkyl group, substituted or unsubstituted alkoxy group, substituted or unsubstituted aromatic hydrocarbon group, substituted or unsubstituted aromatic heterocyclic group, substituted or unsubstituted aralkyl group, substituted Alternatively, it represents an unsubstituted aryloxy group, a substituted or unsubstituted alkoxycarbonyl group, a carboxyl group, and R ^{7 to} R ¹⁸ may form a ring with two of them adjacent to each other. L ² is a substituted or unsubstituted alkylene group, a substituted or unsubstituted alkenylene group, a substituted or unsubstituted cycloalk Represents a len group, a substituted or unsubstituted arylene group, a substituted or unsubstituted aralkylene group, l is a number having a value of 0 or 1, s is an integer of 1 to 2, and M is (s + 1 ) Represents a valent metal ion.)

Wherein R ^{19 to} R ⁴⁰ are each independently a hydrogen atom, a halogen atom, a hydroxyl group, a substituted or unsubstituted amino group, a nitro group, a cyano group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl. Group, substituted or unsubstituted cycloalkyl group, substituted or unsubstituted alkoxy group, substituted or unsubstituted aromatic hydrocarbon group, substituted or unsubstituted aromatic heterocyclic group, substituted or unsubstituted aralkyl group, substituted Or an unsubstituted aryloxy group, a substituted or unsubstituted alkoxycarbonyl group, or a carboxyl group, and R ^{19 to} R ⁴⁰ may form a ring with two of them adjacent to each other. Ar ^{1 to} Ar ³ represent a substituted or unsubstituted aromatic hydrocarbon having 6 to 20 carbon atoms, t is an integer having a value of 0 to 3. )

Wherein R ^{41 to} R ⁵⁶ are each independently a hydrogen atom, halogen atom, hydroxyl group, substituted or unsubstituted amino group, nitro group, cyano group, substituted or unsubstituted alkyl group, substituted or unsubstituted alkenyl. Group, substituted or unsubstituted cycloalkyl group, substituted or unsubstituted alkoxy group, substituted or unsubstituted aromatic hydrocarbon group, substituted or unsubstituted aromatic heterocyclic group, substituted or unsubstituted aralkyl group, substituted Or an unsubstituted aryloxy group, a substituted or unsubstituted alkoxycarbonyl group, or a carboxyl group, and R ^{41 to} R ⁵⁶ may form a ring with two of them adjacent to each other.)

Wherein R ^{57 to} R ⁶² are each independently a hydrogen atom, halogen atom, hydroxyl group, substituted or unsubstituted amino group, nitro group, cyano group, substituted or unsubstituted alkyl group, substituted or unsubstituted alkenyl. Group, substituted or unsubstituted cycloalkyl group, substituted or unsubstituted alkoxy group, substituted or unsubstituted aromatic hydrocarbon group, substituted or unsubstituted aromatic heterocyclic group, substituted or unsubstituted aralkyl group, substituted or unsubstituted aryloxy group, a substituted or unsubstituted alkoxycarbonyl group, a carboxyl group. the R ⁵⁷ to R ⁶² may together to form a two adjacent groups out of their ring.)

Wherein R ^{63 to} R ⁸⁰ are each independently a hydrogen atom, a halogen atom, a hydroxyl group, a substituted or unsubstituted amino group, a nitro group, a cyano group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl. Group, substituted or unsubstituted cycloalkyl group, substituted or unsubstituted alkoxy group, substituted or unsubstituted aromatic hydrocarbon group, substituted or unsubstituted aromatic heterocyclic group, substituted or unsubstituted aralkyl group, substituted Or an unsubstituted aryloxy group, a substituted or unsubstituted alkoxycarbonyl group, or a carboxyl group, and R ^{63 to} R ⁸⁰ may form a ring with two of them adjacent to each other.)

(In the formula, Ar ^{4 to} Ar ⁵ are each independently a substituted or unsubstituted aromatic hydrocarbon group or a substituted or unsubstituted aromatic heterocyclic group having 6 to 20 carbon atoms. Ar ^{4 to} Ar ⁵ The substituents of each may be bonded to each other to form a ring, and X is a monovalent to tetravalent group composed of a substituted or unsubstituted condensed aromatic hydrocarbon having 6 to 34 carbon atoms, and n is 1. Represents an integer of ~ 4.)
For each general formula, R ^{1 to} R ⁸⁰ are each independently a hydrogen atom, halogen atom, hydroxyl group, substituted or unsubstituted amino group, nitro group, cyano group, substituted or unsubstituted alkyl group, substituted or unsubstituted alkenyl. Group, substituted or unsubstituted cycloalkyl group, substituted or unsubstituted alkoxy group, substituted or unsubstituted aromatic hydrocarbon group, substituted or unsubstituted aromatic heterocyclic group, substituted or unsubstituted aralkyl group, substituted Alternatively, it represents an unsubstituted aryloxy group, a substituted or unsubstituted alkoxycarbonyl group, or a carboxyl group. R ^{1 to} R ⁸⁰ may form a ring with two of them adjacent to each other.
n is an integer of 1 to 3, and m is an integer represented by 0 to 2. l is a number having a value of 0 or 1. Moreover, s is an integer of 1-2. t is an integer having a value of 0 to 3. M represents a (n + m) -valent or (s + 1) -valent metal ion.
X is a 1 to 4 valent group composed of a substituted or unsubstituted aromatic hydrocarbon having 6 to 34 carbon atoms. Examples of unsubstituted aromatic hydrocarbon groups having 6 to 34 carbon atoms include benzene, naphthalene, anthracene, biphenylene, fluorene, phenanthrene, naphthacene, triphenylene, pyrene, dibenzo [cd, jk] pyrene, perylene, benzo [a]. Examples include perylene, dibenzo [a, j] perylene, dibenzo [a, o] perylene, pentacene, tetrabenzo [de, hi, op, st] pentacene, tetraphenylene, terylene, bisanthrene, and 9,9′-spirobifluorene. . The substituents that these aromatic hydrocarbons have include halogen atoms, hydroxyl groups, substituted or unsubstituted amino groups, nitro groups, cyano groups, substituted or unsubstituted alkyl groups, substituted or unsubstituted alkenyl groups, substituted or Unsubstituted cycloalkyl group, substituted or unsubstituted alkoxy group, substituted or unsubstituted aromatic hydrocarbon group, substituted or unsubstituted aromatic heterocyclic group, substituted or unsubstituted aralkyl group, substituted or unsubstituted Examples thereof include an aryloxy group, a substituted or unsubstituted alkoxycarbonyl group, and a carboxyl group.

Ar ^{1 to} Ar ⁵ are each independently a substituted or unsubstituted aromatic hydrocarbon group having 6 to 20 carbon atoms. Examples of the unsubstituted aromatic hydrocarbon group having 6 to 20 carbon atoms include a phenyl group, a naphthyl group, an anthryl group, a phenanthrenyl group, a pyrenyl group, and a perylenyl group. Examples of the substituent of the aromatic hydrocarbon group having 6 to 20 carbon atoms include halogen atom, hydroxyl group, substituted or unsubstituted amino group, nitro group, cyano group, substituted or unsubstituted alkyl group, substituted or unsubstituted Substituted alkenyl group, substituted or unsubstituted cycloalkyl group, substituted or unsubstituted alkoxy group, substituted or unsubstituted aromatic hydrocarbon group, substituted or unsubstituted aromatic heterocyclic group, substituted or unsubstituted aralkyl Group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted alkoxycarbonyl group, and a carboxyl group.

Examples of condensed aromatic hydrocarbons having 14 to 34 carbon atoms include anthracene, phenanthrene, naphthacene, pentacene, pyrene, chrysene, picene, pentaphen, hexacene, perylene, benzo [a] perylene, dibenzo [a, j] perylene, dibenzo [A, o] perylene, terylene, bisanthrene, pyranthrene, tetrabenzo [de, hi, op, st] pentacene, coronene and the like. The substituents of these condensed aromatic hydrocarbons include halogen atoms, hydroxyl groups, substituted or unsubstituted amino groups, nitro groups, cyano groups, substituted or unsubstituted alkyl groups, substituted or unsubstituted alkenyl groups, substituted Or an unsubstituted cycloalkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aromatic hydrocarbon group, a substituted or unsubstituted aromatic heterocyclic group, a substituted or unsubstituted aralkyl group, a substituted or unsubstituted Aryloxy groups, substituted or unsubstituted alkoxycarbonyl groups, and carboxyl groups.
Examples of the halogen atom include fluorine, chlorine, bromine and iodine. Examples of the substituted or unsubstituted alkyl group include methyl, ethyl, propyl, isopropyl, n-butyl, s-butyl, isobutyl, t-butyl, n-pentyl, and n-hexyl. Group, n-heptyl group, n-octyl group, hydroxymethyl group, 1-hydroxyethyl group, 2-hydroxyethyl group, 2-hydroxyisobutyl group, 1,2-dihydroxyethyl group, 1,3-dihydroxyisopropyl group, Examples include 2,3-dihydroxy-t-butyl group, 1,2,3-trihydroxypropyl group, chloromethyl group, 2-bromoethyl group, 2,3-diiodo t-butyl group. Examples of the substituted or unsubstituted aromatic hydrocarbon group include phenyl group, 1-naphthyl group, 2-naphthyl group, 1-anthryl group, 2-anthryl group, 9-anthryl group, 1-phenanthryl group, 2-phenanthryl group, 3-phenanthryl group, 4-phenanthryl group, 9-phenanthryl group, 1-naphthacenyl group, 2-naphthacenyl group, 9-naphthacenyl group, 1-pyrenyl group, 2-pyrenyl group, 4-pyrenyl group, 2-biphenylyl group, 3-biphenylyl group, 4-biphenylyl group, p-terphenyl-yl group, m-terphenyl-yl group, tolyl group, pt-butylphenyl group, 4 ''-t -Butyl-p-terphenyl-4-yl group and the like. The substituted or unsubstituted aromatic heterocyclic group includes pyrrolyl group, pyrazinyl group, indolyl group, isoindolyl group, furyl group, benzofuranyl group, isobenzofuranyl group, quinolyl group, isoquinolyl group, quinoxalinyl group, carbazolyl group. Group, phenanthridinyl group, acridinyl group, phenanthrolin-2-yl group, phenazinyl group, phenothiazinyl group, phenoxazinyl group, oxazolyl group, furazanyl group, thienyl group, 2-methylpyrrol-1-yl group, 4 -T-butyl 1-indolyl group, etc. are mentioned. The substituted or unsubstituted amino group is represented by —NX ¹ X ^2, and examples of X ¹ and X ² are independently a hydrogen atom or the above substituted or unsubstituted alkyl group, the above substituted or unsubstituted group. Examples thereof include a substituted aromatic hydrocarbon group and a substituted or unsubstituted aromatic heterocyclic group.

Examples of the substituted or unsubstituted alkenyl group include vinyl group, allyl group, 1-butenyl group, 2-butenyl group, 3-butenyl group, 1,3-butanedienyl group, 1-methylvinyl group, styryl group, 2 , 2-diphenylvinyl group, 1,2-diphenylvinyl group, phenylallyl group, cyclohexylidenemethine group and the like. Examples of the substituted or unsubstituted cycloalkyl group include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, and a 4-methylcyclohexyl group. The substituted or unsubstituted alkoxy group is a group represented by —OY, and examples of Y include the aforementioned substituted or unsubstituted alkyl group. Examples of the substituted or unsubstituted aralkyl group include benzyl group, 1-phenylethyl group, 2-phenylethyl group, 1-phenylisopropyl group, 2-phenylisopropyl group, phenyl-t-butyl group, α-naphthyl. Examples include a methyl group, 1-β-naphthylethyl group, p-methylbenzyl group, 1-chloro-2-phenylisopropyl group and the like. The substituted or unsubstituted aryloxy group is represented as —OZ, and Z includes the above-described substituted or unsubstituted aromatic hydrocarbon group or the above-described substituted or unsubstituted aromatic heterocyclic group. The substituted or unsubstituted alkoxycarbonyl group is represented as —COOY ^2, and examples of Y ² include the aforementioned substituted or unsubstituted alkyl group. Examples of metal atoms represented by M are aluminum, beryllium, bismuth, cadmium, cerium, cobalt, copper, iron, gallium, germanium, mercury, indium, lanthanum, magnesium, molybdenum, niobium, antimony, scandium, tin, tantalum. , Thorium, titanium, uranium, tungsten, zirconium, vanadium, zinc and the like.
Specific examples of the compound used in the organic semiconductor layer of the present invention are shown in the following [Chemical Formula 8] to [Chemical Formula 62], but are not particularly limited thereto.

  As the compound used for the light emitting layer of the present invention, any compound can be used as long as it is used for the light emitting layer of the organic electroluminescence element. For example, in addition to the above [Chemical Formula 8] and [Chemical Formula 22], 1,3-bis (pt-butylphenyl-1,3,4-oxadiazolyl) phenyl (OXD-7) [Chemical Formula 63] N, N′-bis (2,5-di-t-butylphenyl) perylenetetracarboxylic acid diimide (BPPC) [chemical formula 64], 1,4 bis (p-tolyl-p-methylstyrylphenyl) naphthalene [chemical formula 65].

  In addition, a layer in which a charge transport material is doped with a fluorescent material can be used as a light emitting material. For example, 4-dicyanomethylene-2-methyl-6- (p-dimethylaminostyryl) -4H-pyran (DCM) [Chemical Formula 66], 2,3-quinacridone is added to the quinolinol metal complex such as Alq3 [Chemical Formula 8]. A layer doped with a quinacridone derivative such as [Chemical Formula 67], a coumarin derivative such as 3- (2′-benzothiazole) -7-diethylaminocoumarin [Chemical Formula 68], or an electron transport material bis (2-methyl-8-hydroxyquinoline) ) A layer in which a condensed polycyclic aromatic group such as perylene [Chemical Formula 70] is doped to -4-phenylphenol-aluminum complex [Chemical Formula 69] or a hole transport material 4,4′-bis (m-tolylphenylamino) biphenyl A layer in which (TPD) [Chemical 71] is doped with rubrene [Chemical 72] or the like can be used.

  The material used for the hole transport / injection layer used in the present invention is not particularly limited, and any compound that is usually used as a hole transport / injection material may be used. For example, bis (di (p-tolyl) aminophenyl) -1,1-cyclohexane [Chemical Formula 73], TPD [Chemical Formula 71], N, N′-diphenyl-NN—bis (1-naphthyl) -1, And triphenyldiamines such as 1′-biphenyl) -4,4′-diamine (NPB [Chemical Formula 62]), starburst type molecules (Chemical Formula 74) to [Chemical Formula 76], and the like.

  The material used for the electron transport / injection layer used in the present invention is not particularly limited, and any compound that is usually used as an electron transport / injection material may be used. For example, 2- (4-biphenylyl) -5- (4-t-butylphenyl) -1,3,4-oxadiazole (Bu-PBD) [Chemical 77], OXD-7 [Chemical 63] Examples thereof include diazole derivatives, triazole derivatives ([Chemical Formula 78], [Chemical Formula 79], etc.) and quinolinol-based metal complexes ([Chemical Formula 8], [Chemical Formula 69], [Chemical Formula 80] to [Chemical Formula 83], etc.).

The material used for the hole blocking layer and the exciton blocking layer of the present invention is not particularly limited, and any compound that is usually used as a hole blocking material or an exciton blocking material may be used. For example, by combining the above-mentioned electron transport / injection material and hole transport / injection material in consideration of the oxidation and reduction potential relationship between the material used for the light emitting layer and the electrode material, the interface and bulk characteristics, It can be a hole blocking layer or an exciton blocking layer.
The formation method of each electrode and insulator layer of the organic thin film light emitting transistor of the present invention is not particularly limited. In addition to the conventionally known vacuum deposition method, spin coating method, sputtering method, CVD method, a general thin film forming method such as a coating method or a coating sintering method can be used. The organic thin film layer containing an organic compound used in the organic TFT of the present invention is not only a wet method such as a dipping method of a solution dissolved in a solvent, a spin coating method, a casting method, a bar coating method, a roll coating method, and an ink jet method. It can be formed by a method such as a vacuum deposition method or a molecular beam deposition method (MBE method). Among these, for the third insulator layer, a voltage is applied in a state where the exposed portion of the third electrode is immersed in a solution in which the material forming the insulating layer is dissolved or dispersed, and the electricity is selectively deposited on the electrode. When the electrophoresis method is used, an insulator layer can be formed on the surface of the third electrode made of a light-transmitting conductor without reducing the effective area of the first electrode. In this case, any material can be used for the third insulator layer as long as it has sufficient insulation and electrophoretic properties. Examples include various organic polymer materials such as natural oils and fats, synthetic oils and fats, alkyd resins, polyester resins, acrylic resins, and epoxy resins.

The etching method of the present invention is appropriately selected according to the electrode material and insulator material to be used. For example, when the first and second insulator layers are silicon insulators such as SiO2, wet etching using hydrofluoric acid or dry etching using a fluorine-based gas can be used, but the method is not limited thereto. It is not a thing.
As a patterning method used in the present invention, in addition to using a metal mask or the like, a resist mask or the like produced using a photolithography method can be used. Not.
The film thickness of the organic layer of the organic thin film light-emitting transistor of the present invention is not particularly limited, but in general, if the film thickness is too thin, defects such as pinholes are likely to occur. A voltage is required, which causes a deterioration in performance of the organic thin film light emitting transistor. Usually, the range of several tens of nm to 1 μm is preferable.
Hereinafter, examples of the present invention will be described in detail, but the present invention is not limited to the following examples unless it exceeds the gist.

The structure of the organic TFT element of Example 1 is shown in FIG. An ITO film having a thickness of 150 nm was formed as a first electrode on a glass substrate by sputtering. Subsequently, SiO ₂ was formed thereon as a first insulator layer to a thickness of 100 nm by sputtering, and then ITO was formed as a conductor layer to be a third electrode to a thickness of 100 nm by sputtering. . Further, a SiO ₂ film having a thickness of 100 nm was formed again by sputtering. After a photoresist is formed on the multilayer film thus obtained by spin coating to a thickness of 250 nm, it is exposed and developed through a comb-like photomask having a line width of 10 μm and an interval of 10 μm as a gate electrode pattern, and a pitch of 20 μm. A resist mask pattern having an L / S ratio = 1 was obtained. This was processed in a reactive ion etching apparatus for 5 minutes under the conditions of CF ₄ : flow rate 20 SCCM, process pressure 2.0 Pa, and RF output 100 W. Subsequently, after treatment for 20 minutes under the conditions of CH ₄ : flow rate 6 SCCM, hydrogen: flow rate 30 SCCM, process pressure 2.7 Pa, RF output 100 W, oxygen ashing was performed for 2 minutes. This was further treated for 5 minutes 30 seconds under the conditions of CF ₄ : flow rate 20 SCCM, process pressure 2.0 Pa, RF output 100 W. An SiO ₂ thin film is deposited to a thickness of 60 nm on the substrate thus obtained by chemical vapor deposition (CVD), and CHF ₃ : flow rate 30 SCCM, process pressure 1.3 Pa, RF output 90 W in a reactive ion etching apparatus. A third insulator layer was formed on the side surface of the third electrode by treatment for 7 minutes under the above conditions. On this substrate, the compound [Chemical Formula 62] was formed as an organic thin film layer to a thickness of 350 nm by vacuum deposition. On this, a compound [Chemical Formula 8] was formed to a thickness of 70 nm as a light emitting layer. Further, a magnesium-silver alloy was formed as a second electrode to a thickness of 200 nm by a vacuum vapor deposition method to produce an organic thin film light emitting transistor. A rectangular wave voltage with a frequency of 50 Hz and a maximum voltage of 8.5 V is applied to the gate electrode of this element, and a DC voltage of 10 V is applied between the source and drain, and the response rise time of the light emission intensity (90% from the time of 10% change of the total change amount). %), The time was 1 μs or less. When a gate voltage of −3 V and a source / drain voltage of 10 V were applied to this device, the light emission efficiency was 14 cd / A and the maximum luminance was 20000 cd / m ² .

An organic thin film light emitting transistor was fabricated in the same manner as in Example 1 except that SiNx layers were used as the first and second insulator layers. A rectangular wave voltage with a frequency of 50 Hz and a maximum voltage of 8.5 V is applied to the gate electrode of this element, and a DC voltage of 10 V is applied between the source and drain, and the response rise time of the light emission intensity (90% from the time of 10% change of the total change amount). %), The time was 1 μs or less. When a gate voltage of −3 V and a source / drain voltage of 10 V were applied to this device, the light emission efficiency was 15 cd / A and the maximum luminance was 20000 cd / m ² .

The element structure of Example 3 is shown in FIG. The light emitting layer is a thin film having a thickness of 50 nm made of the compound [Chemical Formula 65], and an electron transporting layer having a thickness of 20 nm made of the compound [Chemical Formula 8] is formed between this and the second electrode by a vacuum deposition method. In the same manner as in Example 1, an organic thin film light emitting transistor was produced. A rectangular wave voltage with a frequency of 50 Hz and a maximum voltage of 8.5 V is applied to the gate electrode of this element, and a DC voltage of 10 V is applied between the source and drain, and the response rise time of the light emission intensity (90% from the time of 10% change of the total change amount). %), The time was 1 μs or less. When a gate voltage of −3 V and a source / drain voltage of 10 V were applied to the device, the light emission efficiency was 3 cd / A and the maximum luminance was 8000 cd / m ² .

An organic thin film light-emitting transistor was fabricated in the same manner as in Example 1 except that IZO was formed to a thickness of 100 nm by a sputtering method as a conductor layer to be the third electrode. A rectangular wave voltage with a frequency of 50 Hz and a maximum voltage of 8.5 V is applied to the gate electrode of this element, and a DC voltage of 10 V is applied between the source and drain, and the response rise time of the light emission intensity (90% from the time of 10% change of the total change amount). %), The time was 1 μs or less. When a gate voltage of −3 V and a source / drain voltage of 10 V were applied to this device, the light emission efficiency was 14 cd / A and the maximum luminance was 21000 cd / m ² .

The structure of the organic TFT element of Example 5 is shown in FIG. An ITO film having a thickness of 150 nm was formed as a first electrode on a glass substrate by sputtering. Subsequently, a SiO ₂ film having a thickness of 100 nm is formed thereon as a first insulator layer by a sputtering method, and then a film having a thickness of 100 nm is formed while ITO is heated to 350 ° C. by sputtering as a third electrode. Formed with. Further, a SiO ₂ film having a thickness of 100 nm was formed again by sputtering. After a photoresist is formed on the multilayer film thus obtained by spin coating to a thickness of 250 nm, it is exposed and developed through a comb-like photomask having a line width of 10 μm and an interval of 10 μm as a gate electrode pattern, and a pitch of 20 μm. A resist mask pattern having an L / S ratio = 1 was obtained. This was processed in a reactive ion etching apparatus for 5 minutes under the conditions of CF ₄ : flow rate 20 SCCM, process pressure 2.0 Pa, and RF output 100 W. Subsequently, after treatment for 20 minutes under the conditions of CH ₄ : flow rate 6 SCCM, hydrogen: flow rate 30 SCCM, process pressure 2.7 Pa, RF output 100 W, oxygen ashing was performed for 2 minutes. This was further treated for 5 minutes 30 seconds under the conditions of CF ₄ : flow rate 20 SCCM, process pressure 2.0 Pa, RF output 100 W. The substrate thus obtained is immersed in an electrodeposition solution prepared from 750 parts by weight of acrylic resin, 250 parts by weight of melamine resin, and 60 parts by weight of triethylamine together with the counter electrode, so that the counter electrode is a cathode and the third electrode is an anode. Energized. After electrodeposition, the glass substrate was taken out and thoroughly washed, and then dried at 100 ° C. until there was no weight loss. The film thickness of the formed third insulator layer after drying was 50 nm. On this substrate, the compound [Chemical Formula 62] was formed as an organic thin film layer to a thickness of 350 nm by vacuum deposition. On this, a compound [Chemical Formula 8] was formed to a thickness of 70 nm as a light emitting layer. Further, a magnesium-silver alloy was formed as a second electrode to a thickness of 200 nm by a vacuum vapor deposition method to produce an organic thin film light emitting transistor. A rectangular wave voltage with a frequency of 50 Hz and a maximum voltage of 8.5 V is applied to the gate electrode of this element, and a DC voltage of 10 V is applied between the source and drain, and the response rise time of the light emission intensity (90% from the time of 10% change of the total change amount). %), The time was 1 μs or less. When a gate voltage of −3 V and a source / drain voltage of 10 V were applied to this device, the light emission efficiency was 13 cd / A and the maximum luminance was 25000 cd / m ² .

The light emitting layer is a thin film having a thickness of 50 nm made of the compound [Chemical Formula 65], and an electron transporting layer having a thickness of 20 nm made of the compound [Chemical Formula 8] is formed between this and the second electrode by a vacuum deposition method. In the same manner as in Example 5, an organic thin film light emitting transistor was produced. A rectangular wave voltage with a frequency of 50 Hz and a maximum voltage of 8.5 V is applied to the gate electrode of this element, and a DC voltage of 10 V is applied between the source and drain, and the response rise time of the light emission intensity (90% from the time of 10% change of the total change amount). %), The time was 1 μs or less. When a gate voltage of −3 V and a source / drain voltage of 10 V were applied to the device, the light emission efficiency was 2.5 cd / A and the maximum luminance was 10,000 cd / m ² .

The structure of the organic TFT element of Example 7 is shown in FIG. An ITO film having a thickness of 150 nm was formed as a first electrode on a glass substrate by sputtering. Subsequently, SiO ₂ was formed thereon as a first insulator layer to a thickness of 100 nm by sputtering, and then ITO was formed as a conductor layer to be a third electrode to a thickness of 100 nm by sputtering. . After a photoresist is formed on the multilayer film thus obtained by spin coating to a thickness of 250 nm, it is exposed and developed through a comb-like photomask having a line width of 10 μm and an interval of 10 μm as a gate electrode pattern, and a pitch of 20 μm. A resist mask pattern having an L / S ratio = 1 was obtained. This was treated in a reactive ion etching apparatus for 20 minutes under the conditions of CH ₄ : flow rate 6 SCCM, hydrogen: flow rate 30 SCCM, process pressure 2.7 Pa, RF output 100 W, and then oxygen ashing was performed for 2 minutes. This was further treated for 5 minutes 30 seconds under the conditions of CF ₄ : flow rate 20 SCCM, process pressure 2.0 Pa, RF output 100 W. The substrate thus obtained is immersed in an electrodeposition solution prepared from 750 parts by weight of acrylic resin, 250 parts by weight of melamine resin and 60 parts by weight of triethylamine together with the counter electrode so that the counter electrode is a cathode and the third electrode is an anode. Energized to. After electrodeposition, the glass substrate was taken out and thoroughly washed, and then dried at 100 ° C. until there was no weight loss. The film thickness of the formed third insulator layer after drying was 50 nm. On this substrate, the compound [Chemical Formula 62] was formed as an organic thin film layer to a thickness of 350 nm by vacuum deposition. On this, a compound [Chemical Formula 8] was formed to a thickness of 70 nm as a light emitting layer. Further, a magnesium-silver alloy was formed as a second electrode to a thickness of 200 nm by a vacuum vapor deposition method to produce an organic thin film light emitting transistor. A rectangular wave voltage with a frequency of 50 Hz and a maximum voltage of 8.5 V is applied to the gate electrode of this element, and a DC voltage of 10 V is applied between the source and drain, and the response rise time of the light emission intensity (90% from the time of 10% change of the total change amount). %), The time was 1 μs or less. When a gate voltage of −3 V and a source / drain voltage of 10 V were applied to this device, the light emission efficiency was 14 cd / A and the maximum luminance was 22000 cd / m ² .

  The structure of the organic TFT element of Example 8 is shown in FIG. An ITO film having a thickness of 150 nm was formed as a first electrode on a glass substrate by sputtering. Subsequently, SiO 2 was formed as a first insulator layer with a thickness of 100 nm thereon by a sputtering method, and then ITO was formed as a conductor layer to be a third electrode with a thickness of 100 nm by a sputtering method. Furthermore, SiO2 was formed into a film having a thickness of 100 nm by sputtering again. A photoresist (manufactured) is formed on the multilayer film thus obtained to a film thickness of 250 nm by spin coating, and then exposed and developed through a phase shift mask with a pitch of 2 μm as a gate electrode pattern, with a pitch of 1 μm and an L / S ratio. = 1 resist mask pattern was obtained. This was treated in a reactive ion etching apparatus for 5 minutes under the conditions of CF4: flow rate 20 SCCM, process pressure 2.0 Pa, and RF output 100 W. Subsequently, after treatment for 20 minutes under the conditions of CH4: flow rate 6 SCCM, hydrogen: flow rate 30 SCCM, process pressure 2.7 Pa, RF output 100 W, oxygen ashing was performed for 2 minutes. This was further treated for 5 minutes 30 seconds under the conditions of CF4: flow rate 20 SCCM, process pressure 2.0 Pa, RF output 100 W. A SiO thin film having a thickness of 50 nm was formed on only the side surface of the third electrode by oblique vacuum deposition with substrate rotation as a third insulator layer on the substrate thus obtained. Compound (55) was formed into a film thickness of 350 nm as an organic thin film layer on this substrate by a vacuum deposition method. A compound (1) having a thickness of 70 nm was formed thereon as a light emitting layer. Further, a magnesium-silver alloy was formed to a thickness of 200 nm as a second electrode by a vacuum vapor deposition method to produce an organic thin film light emitting transistor element. A rectangular wave voltage with a frequency of 50 Hz and a maximum voltage of 8.5 V is applied to the gate electrode of this element, and a DC voltage of 10 V is applied between the source and drain, and the response rise time of the light emission intensity (90% from the time of 10% change of the total change amount). %), The time was 1 μs or less. When a gate voltage of −3 V and a source / drain voltage of 10 V were applied to the device, the light emission efficiency was 13.5 cd / A and the maximum luminance was 24000 cd / m 2.

Comparative Example 1

The structure of the organic TFT element of the comparative example is shown in FIG. An ITO film having a thickness of 150 nm was formed as a first electrode on a glass substrate by sputtering. On top of this, a compound [Chemical Formula 62] was formed as a first organic thin film layer to a thickness of 100 nm by vacuum deposition. A third electrode was formed thereon by using a metal mask with a comb-like pattern to deposit aluminum in a thickness of 100 nm by a vacuum deposition method. Further thereon, a compound [Chemical Formula 62] was formed as a second organic thin film layer to a film thickness of 100 nm by vacuum deposition. On this, a compound [Chemical Formula 8] was formed to a thickness of 70 nm as a light emitting layer. Further, a magnesium-silver alloy was formed as a second electrode to a thickness of 200 nm by a vacuum vapor deposition method to produce an organic thin film light emitting transistor. When a rectangular wave voltage with a frequency of 50 Hz and a maximum voltage of 8.5 V is applied to the gate electrode of this device and a DC voltage of 10 V is applied between the source and the drain, a large current flows between the gate and the source, and a clear response of the emission luminance is observed. Was not. When the rectangular wave voltage was set to 3 V, the response rise time of the light emission intensity (time from 10% change to 90% change of the total change amount) was 1 μs or less. When a gate voltage of −3 V and a source / drain voltage of 10 V were applied to this device, the light emission efficiency was 6 cd / A and the maximum luminance was 10,000 cd / m ² .

Comparative Example 2

(See FIG. 1) ITO was deposited on a glass substrate by sputtering to a thickness of 150 nm as the first electrode. Subsequently, SiO ₂ was formed as a first insulator layer to a thickness of 100 nm thereon by sputtering, and then aluminum was formed as a third electrode to a thickness of 100 nm by vapor deposition. Further, a SiO ₂ film having a thickness of 100 nm was formed again by sputtering. After a photoresist is formed on the multilayer film thus obtained by spin coating to a thickness of 250 nm, it is exposed and developed through a comb-like photomask having a line width of 10 μm and an interval of 10 μm as a gate electrode pattern, and a pitch of 20 μm. A resist mask pattern having an L / S ratio = 1 was obtained. This was processed in a reactive ion etching apparatus for 5 minutes under the conditions of CF ₄ : flow rate 20 SCCM, process pressure 2.0 Pa, and RF output 100 W. This was dipped in an etching solution warmed to 40 ° C. for 10 seconds in a mixed solution of 60 parts of phosphoric acid, 12.6 parts of nitric acid and 18.6 parts of acetic acid, and then washed with running water until the washing solution became neutral. This was further put into a reactive ion etching apparatus and treated for 5 minutes 30 seconds under the conditions of CF ₄ : flow rate 20 SCCM, process pressure 2.0 Pa, and RF output 100 W. A third insulator layer having a thickness of 30 nm was formed on the side surface of the third electrode by depositing a SiO ₂ film and anisotropic etching on the substrate thus obtained. On this substrate, the compound [Chemical Formula 62] was formed as an organic thin film layer to a thickness of 350 nm by vacuum deposition. On this, a compound [Chemical Formula 8] was formed to a thickness of 70 nm as a light emitting layer. Further, a magnesium-silver alloy was formed as a second electrode to a thickness of 200 nm by a vacuum vapor deposition method to produce an organic thin film light emitting transistor. A rectangular wave voltage with a frequency of 50 Hz and a maximum voltage of 8.5 V is applied to the gate electrode of this element, and a DC voltage of 10 V is applied between the source and drain, and the response rise time of the light emission intensity (90% from the time of 10% change of the total change amount). %), The time was 1 μs or less. When a gate voltage of −3 V and a source / drain voltage of 10 V were applied to this device, the light emission efficiency was 8 cd / A and the maximum luminance was 12000 cd / m ² .

Comparative Example 3

(See FIG. 2) ITO was deposited on the glass substrate by sputtering to a thickness of 150 nm as the first electrode. Subsequently, SiO ₂ was formed as a first insulator layer to a thickness of 100 nm thereon by sputtering, and then aluminum was formed as a third electrode to a thickness of 100 nm by vapor deposition. Further, a SiO ₂ film having a thickness of 100 nm was formed again by sputtering. After a photoresist is formed on the multilayer film thus obtained by spin coating to a thickness of 250 nm, it is exposed and developed through a comb-like photomask having a line width of 10 μm and an interval of 10 μm as a gate electrode pattern, and a pitch of 20 μm. A resist mask pattern having an L / S ratio = 1 was obtained. This was processed in a reactive ion etching apparatus for 5 minutes under the conditions of CF ₄ : flow rate 20 SCCM, process pressure 2.0 Pa, and RF output 100 W. This was dipped in an etching solution warmed to 40 ° C. for 10 seconds in a mixed solution of 60 parts of phosphoric acid, 12.6 parts of nitric acid and 18.6 parts of acetic acid, and then washed with running water until the washing solution became neutral. This was further put into a reactive ion etching apparatus and treated for 5 minutes 30 seconds under the conditions of CF ₄ : flow rate 20 SCCM, process pressure 2.0 Pa, and RF output 100 W. The substrate thus obtained is immersed in an electrodeposition solution prepared from 750 parts by weight of acrylic resin, 250 parts by weight of melamine resin, and 60 parts by weight of triethylamine together with the counter electrode, so that the counter electrode is a cathode and the third electrode is an anode. Energized. After electrodeposition, the glass substrate was taken out and thoroughly washed, and then dried at 100 ° C. until there was no weight loss. The film thickness of the formed third insulator layer after drying was 50 nm. On this substrate, the compound [Chemical Formula 62] was formed as an organic thin film layer to a thickness of 350 nm by vacuum deposition. On this, a compound [Chemical Formula 8] was formed to a thickness of 70 nm as a light emitting layer. Further, a magnesium-silver alloy was formed as a second electrode to a thickness of 200 nm by a vacuum vapor deposition method to produce an organic thin film light emitting transistor. A rectangular wave voltage with a frequency of 50 Hz and a maximum voltage of 8.5 V is applied to the gate electrode of this element, and a DC voltage of 10 V is applied between the source and drain, and the response rise time of the light emission intensity (90% from the time of 10% change of the total change amount). %), The time was 1 μs or less. When a gate voltage of −3 V and a source / drain voltage of 10 V were applied to this device, the light emission efficiency was 8 cd / A and the maximum luminance was 13000 cd / m ² .

Sectional drawing of the organic thin film light emitting transistor of the 1st Embodiment of this invention. Sectional drawing of the organic thin film light emitting transistor of the 2nd Embodiment of this invention. Sectional drawing of the organic thin film light emitting transistor of the 3rd Embodiment of this invention. Sectional drawing of the organic thin film light emitting transistor of the 4th Embodiment of this invention. Sectional drawing of the organic thin film light emitting transistor of the 5th Embodiment of this invention. Sectional drawing of the order of the process for demonstrating the manufacturing method of the organic thin film light emitting transistor of the 1st, 2nd embodiment of this invention (the 1). Sectional drawing of the order of the process for demonstrating the manufacturing method of the organic thin film light emitting transistor of the 1st, 2nd embodiment of this invention (the 2). Sectional drawing of the conventional horizontal type organic TFT element. Sectional drawing of the conventional electrostatic induction type organic TFT element. Sectional drawing of the conventional organic thin film light emitting transistor.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate 2 1st electrode 3 2nd electrode 4 3rd electrode 4a Electrode material layer 5 Organic semiconductor layer 5-1 1st organic semiconductor layer 5-2 2nd organic semiconductor layer 6 1st insulator layer 7 Second insulator layer 8 Third insulator layer 9 Light emitting layer 10 Electron transport layer 11 Hole transport layer 12 Hole blocking layer 13 Gate insulation film

Claims (11)

The first electrode and the second electrode separated from each other, the organic thin film layer including at least the light emitting layer and the organic semiconductor layer sandwiched between and sandwiched between them, and the organic semiconductor layer separated from both the first and second electrodes An electrostatic induction transistor having a third electrode made of a light-transmitting conductor present therein and controlling a current flowing between the first and second electrodes by a voltage applied to the third electrode A first insulator layer formed below the bottom surface of the third electrode, and a third insulator formed on the upper surface of the third electrode. 2 and the third insulator layer covering the side surface of the third electrode, and the same pattern as the third electrode is formed between the first electrode and the third electrode. Characterized in that it is filled with a first insulator layer formed on Organic thin-film light-emitting transistor. 2. The organic thin film light emitting transistor according to claim 1, wherein the insulator layer that fills a space between the first electrode and the third electrode is an inorganic insulator layer. The organic thin film light emitting transistor according to claim 1 or 2, wherein the second insulator layer and the third electrode are formed in the same pattern. 4. The insulator layer according to claim 1, wherein the insulator layer other than the first insulator layer, or the third insulator layer is an insulator layer formed of an organic material. Organic thin film light emitting transistor. It is a manufacturing method of the organic thin film light emitting transistor in any one of Claim 1 to 4, Comprising:
(1) sequentially depositing a first insulator layer, a third conductor layer, and a second insulator layer on the first conductor layer to be the first electrode;
(2) A step of patterning the second insulator layer, the third conductor layer, and the first insulator layer to form a third electrode sandwiched between the first and second insulator layers. When,
(3) forming a third insulator layer covering the side surface of the third electrode;
(4) depositing an organic semiconductor layer covering the first electrode and the second insulator layer;
A method for producing an organic thin-film light-emitting transistor comprising: The organic material according to claim 5, wherein the third step includes a step of depositing a third insulator layer and a step of performing anisotropic etching on the third insulator layer. Manufacturing method of thin film light emitting transistor. 6. The step (3) includes a step of performing oblique vapor deposition or oblique sputtering in which a thin film is not formed in a shadow portion of a pattern standing upright on a substrate. Manufacturing method of organic thin film light-emitting transistor. A step of forming a sacrificial film for lift-off is added before the step of performing oblique deposition or oblique sputtering, and a step of removing the sacrificial film is added after the step of performing oblique deposition or oblique sputtering. The method for producing an organic thin film light-emitting transistor according to claim 7. It is a manufacturing method of the organic thin film light emitting transistor in any one of Claim 1 to 4, Comprising:
(1) sequentially depositing a first insulator layer and a third conductor layer on a first conductor layer to be a first electrode;
(2) patterning the third conductor layer and the first insulator layer to form a third electrode placed on the first insulator layer;
(3) forming a third insulator layer covering the upper surface and side surfaces of the third electrode;
(4) depositing an organic semiconductor layer covering the first electrode and the third insulator layer;
A method for producing an organic thin-film light-emitting transistor comprising: The organic material according to claim 5 or 9, wherein in the step (3), a third insulator layer is selectively formed on an exposed surface of the third electrode by electrophoresis. Manufacturing method of thin film light emitting transistor. 11. The organic compound film included in the organic thin film layer sandwiched between the first electrode and the second electrode is continuously formed. 11. Manufacturing method of organic thin film light-emitting transistor.

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