JP2005243845A5 - - Google Patents

Description

According to the first aspect of the present invention, when the protective film made of Co or Ni alloy film is selectively formed on the exposed surface of the wiring formed on the surface of the substrate to protect the wiring, The surface is pretreated, the pretreated surface to be plated is electrolessly plated to selectively form the wiring protective film, and the substrate after the electroless plating is cleaned and dried. The substrate processing method is characterized in that plasma processing is performed in a normal pressure atmosphere on the dried substrate surface.

When the protective film made of Co or Ni alloy film is selectively formed on the exposed surface of the wiring formed on the surface of the substrate, the invention according to claim 2 is applied to the substrate surface to be plated on the substrate under atmospheric pressure. A pretreatment is performed after plasma treatment below, and the protective film is selectively formed by subjecting the pretreated surface to be plated to electroless plating, and cleaning the substrate after the electroless plating treatment The substrate processing method is characterized in that plasma processing is performed in a normal pressure atmosphere on the substrate surface after drying.

Pre Symbol pretreatment preferably comprises a cleaning process to clean the substrate surface.
In general, the results of electroless plating greatly depend on the state of the substrate. Depending on the conditions of the previous process, the surface of the substrate varies greatly, such as an oxide film formed on the wiring film, a metal component remaining on the interlayer insulating film, or a strong anticorrosive agent adsorbed. For this reason, it is possible to perform reproducible plating by performing an appropriate cleaning process as the pre-plating process to clean the entire substrate surface.

According to a third aspect of the present invention, the substrate surface is cleaned by adding a chelating agent to an inorganic acid having a pH of 2 or less, an organic acid having a chelating ability of pH 5 or less, and an inorganic acid having a pH of 5 or less. The substrate surface is brought into contact with a chemical solution composed of an alkaline solution capable of removing the anticorrosive agent of the wiring, the anticorrosive agent of the wiring, or an alkaline solution of amino acids, and then the cleaned substrate surface is rinsed with a rinse solution. A substrate processing method according to claim 1 or 2 .

The invention according to claim 4 is characterized in that the pretreatment includes an activation treatment for activating the substrate surface to be plated by applying a catalyst to the substrate surface to be plated on the substrate after cleaning. a substrate processing method according to any one of claims 1 to 3.
By applying a catalyst to the wiring portion of the surface to be plated and activating it, electroless plating with improved selectivity can be performed with good reproducibility.

In the invention according to claim 5 , the activation treatment of the substrate surface to be plated is performed on a chemical solution containing Pd, Ag, Ni, Co, Pt or Au, or a chemical solution containing alkylamine borane or NaBH ₄ The substrate processing method according to claim 4 , wherein the substrate surface after the activation treatment is rinsed with a rinse solution.

By performing flop plasma treatment under normal pressure atmosphere, it is easy to switch between wet treatment and dry treatment (plasma treatment) is easy to perform continuous processing. In addition, by using remote plasma processing that extrudes the plasma generated in the parallel plate out of the system by the flow of gas, processing can be performed without applying a bias voltage to the substrate, so that damage to the substrate is reduced under normal pressure reduction. Compared to plasma processing of This remote plasma treatment can be performed by using, for example, model AP-T manufactured by Sekisui Chemical Co., Ltd.

The invention described in claim 6 is characterized in that the plasma treatment is performed using O ₂ , Ar, He, H ₂ , N ₂ , NH ₃ , SO ₂ , SO ₃ , CF ₄ , C ₂ F ₆ , CF ₃ , CFCF ₂ , a substrate processing method according to any one of claims 1 to 5, characterized in that under at least one laden atmosphere of the CCIF _3.
By using various gas species in this way, the purpose of processing can be changed, and the result can be prevented from changing depending on the surface of the substrate.

The invention according to claim 7, by the plasma treatment, according to claim 1 to 6, characterized in that modified the thickness of 1/100 to 1/2 of the film formed on the substrate surface The substrate processing method according to any one of the above.
Thereby, a protective film can be made into a 2 layer structure, and both adhesiveness with a wiring metal and adhesiveness with an insulating film can be improved. Further, the barrier property against the diffusion of the wiring metal can be improved by modifying the protective film.

Pre Symbol plasma treatment, among the processing, it is preferable to have a plurality of processing steps of changing the type of gas, flow rate, either a voltage.
As a result, a plurality of process conditions can be changed to change the processing target and the reforming conditions.

The Co or Ni alloy film preferably contains a refractory metal such as W, Mo, or Re. Thus, by introducing a refractory metal such as W, Mo, or Re into the alloy, A stable plating film can be obtained.

The invention according to claim 8 is a substrate processing apparatus for selectively forming a wiring protective film on the exposed surface of the wiring formed on the surface of the substrate, the preprocessing chamber for preprocessing the surface of the substrate, An electroless plating chamber for selectively forming the wiring protective film by performing electroless plating on the surface of the substrate to be plated of the pretreated substrate; and a post-processing chamber for cleaning and drying the substrate after the electroless plating; A substrate processing apparatus comprising a plasma processing chamber for performing plasma processing on the substrate surface after drying.

Pre Symbol pretreatment chamber, removing the substrate surface is treated with a chemical solution, a first pre-processing unit for removing chemical solution from the substrate surface, the catalyst is applied to the substrate surface, a chemical solution used in the catalyst application from the substrate surface It is preferable to have at least one of the second pretreatment units.
Although the surface state of the substrate put into the processing apparatus depends on the previous process, the surface cleaning and initialization by the appropriate chemical treatment in the first pretreatment unit and the activity by applying the catalyst in the second pretreatment unit By performing at least one of the crystallization treatments, a plating treatment independent of the previous step can be performed.

Before SL electroless plating chamber is provided with a plating tank, the plating solution circulating system and the plating solution storage tank, the plating solution circulating system, and the plating tank of the plating solution at configurable flow individually at the time and plating treatment Plating standby a can be circulated between the plating solution storage tank, and a circulating flow rate 2~20L / min of plating solution during the plating stand, it is preferable circulation flow rate of the plating solution during the plating process is 0~10L / min .
This ensures a large circulating flow rate of the plating solution during plating standby, keeps the temperature of the plating bath in the electroless plating unit constant, and reduces the circulating flow rate of the plating solution during plating to make it more uniform. A wiring protective film (plating film) having a sufficient thickness can be formed.

Before SL drying chamber is preferably made of spin drier.
Thereby, since a board | substrate can be dried rapidly, productivity as an apparatus can be improved. For example, when a dry air unit is provided, the substrate can be thoroughly dried, and problems such as oxidation of the wiring portion due to adsorbed moisture and generation of water marks due to mistback can be avoided.

The invention described in claim 9, wherein the plasma processing chamber, have a transfer unit for blocking the atmosphere of plasma processing unit and the apparatus and the plasma treatment unit for plasma treatment, the plasma treatment unit, 9. The substrate processing apparatus according to claim 8 , further comprising a heater for controlling a temperature, wherein the transfer unit includes a cool plate for cooling the substrate. Thereby, the reactivity of the substrate surface at the time of plasma processing can be controlled, and by cooling with a cool plate, it is possible to suppress reaction with the atmosphere when the substrate is released into the atmosphere.

Claims (9)

In protecting the wiring by selectively forming a protective film made of a Co or Ni alloy film on the exposed surface of the wiring formed on the surface of the substrate,
Perform pre-treatment on the substrate surface to be plated,
Selectively forming the protective film by performing electroless plating on the surface of the substrate to be plated that has undergone the pretreatment,
The substrate after the electroless plating is cleaned and dried,
A substrate processing method comprising performing plasma processing on the substrate surface after the drying in a normal pressure atmosphere . In protecting the wiring by selectively forming a protective film made of a Co or Ni alloy film on the exposed surface of the wiring formed on the surface of the substrate,
The substrate surface to be plated is subjected to a plasma treatment in a normal pressure atmosphere and then pretreated,
The protective film is selectively formed by performing electroless plating treatment on the surface of the substrate to be plated that has undergone the pretreatment,
The substrate after the electroless plating treatment is cleaned and dried,
A substrate processing method comprising performing plasma processing on the substrate surface after the drying in a normal pressure atmosphere . The substrate surface is cleaned by removing an inorganic acid having a pH of 2 or less, an organic acid having a chelating ability of pH 5 or less, a solution obtained by adding a chelating agent to an inorganic acid having a pH of 5 or less, and an anticorrosive agent for wiring. 3. The method according to claim 1, wherein the substrate surface is brought into contact with a chemical solution made of an alkali solution or an amino acid alkali solution, and then the cleaned substrate surface is rinsed with a rinse solution. The substrate processing method as described. The pre-treatment is in any one of claims 1 to 3, characterized in that it comprises an activation process for activating the該被plating base surface by applying a catalyst on the plating foundation surface on the substrate after cleaning The substrate processing method as described. For applying the catalyst to the surface of the substrate to be plated, the substrate surface to be plated is brought into contact with a chemical solution containing Pd, Ag, Ni, Co, Pt, Ru, or Au, or a chemical solution containing alkylamine borane or NaBH _4. 5. The substrate processing method according to claim 4 , wherein the substrate surface after applying the catalyst is rinsed with a rinsing liquid. The plasma treatment is performed in an atmosphere containing at least one of O2, Ar, He, H2, N2, NH3, SO2, SO3, CF4, C2F6, CF3, CFCF2, and CCIF3. 6. The substrate processing method according to any one of 5 to 5 . Wherein the plasma treatment, a substrate processing method according to any one of claims 1 to 6, characterized in that modified the thickness of 1/100 to 1/2 of the film formed on the substrate surface. A substrate processing apparatus for selectively forming a protective film on an exposed surface of a wiring formed on a surface of a substrate,
A pretreatment chamber for pretreating the substrate surface;
An electroless plating chamber for selectively forming the protective film by performing an electroless plating process on the surface of the substrate to be plated subjected to the pretreatment;
A post-processing chamber for cleaning and drying the processed substrate;
A substrate processing apparatus having a plasma processing chamber for performing plasma processing on a substrate surface. The plasma processing chamber, have a transfer unit for blocking the atmosphere of plasma processing unit and the apparatus and the plasma treatment unit for plasma treatment, the plasma treatment unit have a heater for controlling the temperature and, wherein the transfer unit is a substrate processing apparatus according to claim 8, characterized in that have a cool plate for cooling the substrate.