JP2005242380A - Active matrix substrate and display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an active matrix substrate and a manufacturing method thereof, in which the height of an active element from a transfer destination substrate surface can be controlled to make the active element and the transfer destination substrate approximately parallel even through an adhesive layer when transferring the active element. <P>SOLUTION: The active matrix substrate is provided with a substrate 401, a plurality of adhesive layers provided on the substrate 401 with a practically uniform height, and a plurality of active elements 301 provided on respective adhesive layers, and each adhesive layer includes a height control member 402 and an adhesive 403. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to an active matrix substrate and a display device.

An active matrix display in which an active element is arranged in each pixel can realize a high-quality flat display.

In particular, a liquid crystal display device (LCD) that uses liquid crystal as a light shutter and drives each pixel with an active element such as a TFT is widely used from a PC monitor to a moving image display on a television.

Also, an organic EL material capable of emitting RGB light is formed by an inkjet method or a mask vapor deposition method to form a pixel, and an organic EL display device in which each pixel is driven by an active element such as a TFT can produce a full-color image. It has been shown to be realized with thin panels.

Conventionally, when forming a pixel portion of such an active matrix LCD, each layer is formed on a glass substrate by a vacuum thin film process such as CVD or sputtering, and fine processing is performed by dry etching or wet etching and lithography. I do. And since this is repeated for each layer such as an electrode such as a semiconductor or metal, an insulating film, etc., the number of processes is large, so that the cost is increased. The active element is not formed over the entire surface of the substrate, but is formed in a partial region of each pixel. Since it is more costly to form a large area display, such a wasteful formation method places an economic limit on the formation of a large area display.

On the other hand, the active elements are formed in advance on the element formation substrate at a high density and transferred to the intermediate substrate, and then the active elements are transferred onto a substrate (transfer destination substrate) as a display, and then wiring and A method for reducing the cost by forming a passive structure such as a pixel electrode is disclosed in Japanese Patent Application Laid-Open No. 2001-7340.

FIG. 25 shows a part of the process for transferring the active element from the intermediate substrate to the transfer destination substrate in JP-A-2001-7340. As shown in FIG. 25, the transfer destination substrate 250.
1, a patterned scanning line 2503, an interlayer insulating film 2504, a patterned signal line 2502, and a planarizing film 2505 are stacked. On the planarizing film 2505, the adhesive layer 2
506 is provided. The interlayer insulating film 2504 and the planarizing film 2505 are provided with contact holes for later wiring in regions corresponding to the signal lines 2502 and the scanning lines 2503.

Further, a TFT 2510 is formed on the intermediate substrate 2507 with an adhesive / peeling layer 2508 interposed therebetween. The TFT 2510 is covered with a protective film 2509, and an under layer 2511 is also provided below the lower layer for protection.

When the TFT 2510 is transferred from the intermediate substrate 2507 to the transfer destination substrate 2501, the TFT 2510 to be transferred is aligned with the adhesive layer 2506, and light is irradiated through the light shielding mask 2512 opened only in this region. Transfer is performed by weakening the adhesive force of the adhesive / peeling layer 2508 and bonding the under layer 2511 and the adhesive layer 2506 together.

In this method, a TFT 2510 having a large number of manufacturing processes is formed on an element formation substrate at a high density, transferred once from the element formation substrate to the intermediate substrate 2507, and further TF on the intermediate substrate 2507.
T2510 is transferred onto the transfer destination substrate 2501. At that time, by using a large element formation substrate and a large intermediate substrate 2507, the TFTs 2 arranged at a constant interval are arranged at a high density.
510 can also be transferred to the transfer destination substrate 2501. When such a method is used, TFT 2510 used for a large number of substrates can be formed on a single element formation substrate.
The cost is reduced by the TFT density ratio between the element formation substrate and the transfer destination substrate.

When the TFT 2510 is transferred to the transfer destination substrate 2501 by the method as shown in FIG.
510 is pressed against the adhesive layer 2506 and transferred. However, at that time, it is difficult to control the strength with which the TFT 2510 is pressed, and the height of the adhesive layer 2506 differs depending on whether the adhesive layer 2506 is pressed and spreads laterally, or the TFT 2510 and the transfer destination substrate 25.
There was a problem that 01 was not parallel. Therefore, the TFT 251 provided on the TFT 251 is provided.
Since the height of 0 and the angle between the TFT 2501 and the transfer destination substrate 2501 are not controlled, T
It becomes difficult to form the wiring after the FT 2510 is formed.

Further, when the TFT 2510 is pressed and transferred to the adhesive layer 2506, the adhesive layer 2506 spreads sideways, and the adjacent TFT 2510 may adhere to the adhesive layer 2506.
Therefore, even if the adhesive layer 2506 spreads laterally, the element formation substrate must be formed with a distance between the adjacent TFTs 2510 so that the adjacent TFTs 2510 are not bonded. Therefore, since the number of TFTs 2510 that can be formed on one element formation substrate is reduced, there is a problem that the cost is increased.

As described above, an active element used for a large number of substrates is formed on a single element formation substrate,
Although the method of transferring it to the transfer destination substrate reduces the cost, the conventional methods control the height of the active element from the transfer destination substrate surface and the angle between the transfer destination substrate and the active element at the time of transfer. It was difficult. Further, in order to prevent a plurality of adjacent active elements from being transferred to a region where one active element is transferred, the active elements cannot be formed at a high density on the element formation substrate.

Therefore, in the present invention, in consideration of the above problems, the height of the active element from the transfer destination substrate surface can be controlled when the active element is transferred. It is an object of the present invention to provide an active matrix substrate and a method of manufacturing the same that are substantially parallel to each other.

In order to solve the above problems, an active matrix substrate according to the present invention includes a substrate, an active element formed on the substrate, an element wiring whose one end is connected to the electrode of the active element, and a contact portion. And the other end of the internal wiring is connected to the external wiring, and the contact portion is formed at a portion where the external wiring and the internal wiring intersect on the plane pattern. .

In order to solve the above problems, a display device according to the present invention includes the active matrix substrate, a pixel electrode connected to an element wiring in the active matrix substrate, and an organic EL unit formed on the pixel electrode. It is characterized by having.

As described above in detail, according to the present invention, when the active element is transferred, the height of the active element from the transfer destination substrate surface can be controlled, and the active element and the transfer destination substrate can be interposed through the adhesive layer. An active matrix substrate and a method for manufacturing the same can be provided.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to these examples.

Example 1 of the present invention will be described. In this embodiment, an active element (hereinafter simply referred to as an element) is formed on an element forming substrate (first substrate), transferred to an intermediate substrate, and then a height control member and an adhesive surrounded by the active element are attached. Transferring to the formed transfer destination substrate (second substrate) and forming wirings and the like forms an active matrix substrate. The active matrix substrate of this example is shown in FIG. 16, and the configuration will be described.

The active matrix substrate of this embodiment includes an adhesive layer 404 provided at a height substantially equal to the transfer destination substrate 401 and an element 301 provided on the adhesive layer 404. Adhesive layer 4
04 includes an adhesive 403 and a height control member 402 provided so as to surround the adhesive 403. A post-transfer insulating film 415 is provided on the entire surface of the element 301, and the post-transfer insulating film 415 in a region corresponding to the contact portion of the element 301 is patterned to form wiring such as the pixel electrode 201.

  Next, a method for manufacturing this active matrix substrate will be described with reference to FIGS.

First, a method of forming an element on an element formation substrate and transferring it to an intermediate substrate is shown in FIGS.
Will be described.

First, as shown in FIG. 5, the element 301 is formed on the element formation substrate 501. Element 301
That is, the internal configuration of the active element may be one TFT, a pixel memory circuit composed of a plurality of TFTs, or a driving T for an organic EL display device using four or more TFTs.
A circuit that compensates for variation in Vth of FT may be an internal configuration of one element 301.
It is not limited.

Next, as shown in FIG. 6A, the intermediate substrate 601 is positioned at a position corresponding to each element 301.
The light conversion body 602 is formed using CrO _x or the like whose back surface is blackened. The intermediate substrate 601 on which the light conversion body 602 is formed is bonded and peeled off to a thickness of about 5 to 20 μm using Riba Alpha manufactured by Nitto Denko Co., Ltd., which is a pressure-sensitive adhesive that foams by heating and decreases its adhesive strength. The layer 603 is applied, bonded to the element formation substrate 501, and vacuum laminated.

In this embodiment, ultraviolet light or visible light is irradiated, the light is absorbed by the light conversion body 602 and converted into heat, and the adhesive / peeling layer 603 is heated to foam, thereby reducing the adhesive force. Let Therefore, the light conversion body 602 may be other than that used in this embodiment, and the light irradiation surface is blackened, such as a metal film such as CrO _x , MoTa, MoW, TiO _x , or a metal multilayer film thereof, a carbon film Alternatively, a pattern obtained by patterning a black paint organic film or the like may be used. Also,
In the case where a material that is peeled off by irradiation with light such as ultraviolet light instead of heat is used as the adhesive / peeling layer 603, the light converter 602 has a wavelength for accelerating peeling as the wavelength of the irradiated light. A material to be converted into may be patterned and used. Note that the light converter 602 may not be provided.

Further, as shown in FIG. 6B, the light converter 604 may be formed on the element 301.
In that case, for example, an insulating black resin having a thickness of about 1 to 3 μm in which a pigment is dispersed can be formed on the upper surface of the element 301 as a part of the protective film. In this case, the light converter 604 is replaced by the element 30.
By being provided on 1, the element 301 itself also generates heat, so that the region to be heated can be localized, and the resolution for peeling of the adhesive / peeling layer 603 is greatly improved. For example, even when the element size is about 50 μm and the element interval is about 5 to 10 μm, it can be peeled without any problem.
Further, when the light conversion body 604 is provided on the element 301, a sheet-like shape in which a pressure-sensitive adhesive that can be bonded and weakened by heat, light, or the like is applied onto the carrier film as the adhesive / peeling layer 603. It is also possible to use these materials. Even if the carrier film is about 100 μm and the adhesive is about 50 μm thick by providing the light conversion body 604 on the element 301,
This is because the resolution for peeling of the adhesive / peeling layer 603 can be increased. In addition, the light conversion body 604 provided on the element 301 serves as a light shielding layer of the TFT in the element 301 and is effective in reducing light leakage current. Further, the entire protective film 414 of the element 301 may be made of a black resin, or even if it is not black, the light to be irradiated may be absorbed and converted into heat.

The adhesive / peeling layer 603 is not limited to that used in this embodiment. For example, wax, wax, etc., such as Apiezon Wax manufactured by Apison Products Limited, whose viscosity decreases and adhesive strength decreases when subjected to heat, can also be used. An organic material that reduces adhesive strength by dispersing UV curable resin in adhesives and curing the network containing adhesives when irradiated with light as a material whose adhesive strength is reduced by reaction with ultraviolet light. A resin material may be used.
Including substances whose adhesiveness is reduced by ultraviolet light, such as benzoferon that is easily decomposed by ultraviolet light,
An acrylic adhesive may be used. Further, as the adhesive / peeling layer 603, a temperature-sensitive adhesive or an adhesive tape that responds to a temperature change may be used. For example, by using an organic material that changes to a crystalline state or an amorphous state depending on temperature, it is possible to change the strength change of the adhesive force by one digit or more. Specifically, Intellimer manufactured by Nitta Corporation can be used. The Warm-off type that peels off at the switching temperature or higher is easy to use, but the Cool-off type that peels off at the switching temperature or lower can also be used by making the process suitable for it. Moreover, since the transition between crystal and non-crystal is reversible, this material can be used a plurality of times, which is preferable.

As the intermediate substrate 601, a plastic substrate such as PET or polyolefin can be used in addition to glass. Further, the adhesive / release layer 603 is formed into a sheet shape, and the intermediate substrate 60
1 and the element formation substrate 501 may be attached to each other. The adhesive / peeling layer 603 may be formed on the intermediate substrate 601 by coating.

Next, as shown in FIG. 7, the element formation substrate 501 is removed. In this embodiment, since the element formation substrate 501 is a glass substrate, it is etched with a mixed solution of hydrofluoric acid and a surfactant after being thinned by mechanical polishing. At this time, the etching solution and the material of the under layer are adjusted so that the under layer is not etched. For example, when etching glass with a hydrofluoric acid-based etchant, it is preferable to use a hydrofluoric acid-resistant material such as AlO _x , TaO _x , SiN _x , or an organic resin as the under layer. The element formation substrate 501 is removed by a method such as polishing and etching, or a method in which a layer to be laser ablated is made a part of the under layer or provided below the under layer, and is peeled off by irradiating a laser from the back surface May be.

Next, a process of forming a wiring by further transferring the element transferred to the intermediate substrate to the transfer destination substrate will be described with reference to FIGS.

First, as shown in FIG. 8, a height control member 402 is formed in a region where an element is transferred on a transfer destination substrate 401 made of alkali-free glass, soda lime, plastic, metal foil, or the like. In this embodiment, a photosensitive acrylic resin is applied as the height control member 402 and patterned by photolithography. The height control member 402 has a bank-like shape surrounding the element, and is about 1 to 5 μm higher than the transfer destination substrate 401. Height control member 40
The size of the inner circumference of 2 is smaller than the size of the element.

Next, as shown in FIG. 9, an adhesive 403 is formed inside the height control member 402 to form an adhesive layer 404. The adhesive 403 is formed by screen printing an ultraviolet curable adhesive. At that time, as shown in FIG. 10, since the height control member 402 surrounds the periphery of the region corresponding to the element, the adhesive 403 is a liquid at the time of formation, and an appropriate amount of the adhesive 403 is dropped and then cured. It may be made to do.

Next, as shown in FIG. 11, the intermediate substrate 601 to which the element 301 is transferred and the transfer destination substrate 401 on which the adhesive layer 404 is formed are aligned and temporarily fixed. At this time, the intermediate substrate 601 is pressed against the transfer destination substrate 401, but the height control member 402 of the adhesive layer 404 has a function of maintaining the height. That is, the adhesive 403 is pushed and spreads on the lower surface of the element 301, but the height control member 40.
The height is maintained by the presence of 2 and the spread of the adhesive 403 is restricted. Thus, the height of the adhesive layer 404 becomes a constant height of the height control member 402 and can be controlled. Adhesive 403
This amount may be set so as not to be insufficient for bonding the element 301. Further, since the adhesive layer 404 is surrounded by the height control member 402 and does not spread outward, the adjacent element 301 is not adhered to the region of one element 301, and one adhesive layer 404 is not bonded. 1
Two elements 301 are bonded. When the intermediate substrate 601 and the transfer destination substrate 401 are temporarily fixed, the positions may be fixed mechanically or may be fixed with an appropriate temporary fixing adhesive. In the case of fixing using an adhesive for temporary fixing, it is preferable that the size of the transfer destination substrate 401 and the intermediate substrate 601 is approximately the same size, and there is no element in the portion to be fixed with the adhesive. ,
It is preferable to use the peripheral part of both substrates.

Next, as shown in FIG. 12, in order to selectively peel off the element 301 from the intermediate substrate 601, infrared light is irradiated from the back surface of the intermediate substrate 601 to fix the element 301 to be transferred. The adhesive strength of the layer 603 is weakened. At this time, a glass mask 1201 is provided to selectively irradiate infrared light so that the element 301 that is not transferred does not receive infrared light. And about 9
When the adhesive / peeling layer 603 is adjusted so as to exhibit peelability at 0 ° C., the intensity of infrared light is adjusted so that the light conversion body 602 of the selected element 301 has a peak of about 100 ° C. for about 2 seconds. To keep. Then, since the peripheral non-selected element 301 is hardly irradiated with infrared light, it can maintain a temperature of about 80 ° C. or lower, and the adhesive force of the adhesive / peeling layer 603 fixing these elements 301 is Almost no decline.

Simultaneously with weakening the adhesive force of the adhesive / peeling layer 603, the adhesive 403 is cured by irradiating ultraviolet light from the back surface of the transfer destination substrate 401 to adhere the element 301 to the transfer destination substrate 401. At this time, as shown in FIG. 13, the outer periphery (broken line portion) of the element 301 is provided inside the outer periphery of the height control member 402, and the adhesive 403 is provided inside the height control member 402. If it is, the level | step difference which can be made from these structures will become smooth. Accordingly, when wiring is performed later, defects such as step breaks and nests are reduced, so that the yield of an active matrix substrate having about 1 million or more elements can be remarkably improved. When the adhesive 403 is a thermosetting type, the intermediate substrate 601 and the transfer destination substrate 401 can be locally heated by being sandwiched between heating rollers.

As shown in FIG. 14, the intermediate substrate 601 and the transfer destination substrate 401 are separated in a state where the adhesive force of the adhesive / release layer 603 is weakened and the adhesive 403 is cured, and only the predetermined element 301 is transferred to the transfer destination substrate. 401 is transferred.

At this time, the adhesive 403 does not adhere to the elements 301 other than the selected element 301, and almost 1
One element 301 was adhered to one adhesive layer 404 with a selectivity of 00%. Further, there was no damage to the non-transfer elements remaining on the intermediate substrate 601.

Next, as shown in FIG. 15, a post-transfer insulating film 415 is formed on the entire surface of the transfer destination substrate 401 to which the element 301 has been transferred, using a photosensitive acrylic resin. Contact portion 108 of element 301
In the region corresponding to, a post-transfer insulating film 415 is patterned and opened.

Next, as shown in FIG. 16, Al, ITO, or the like is formed on the entire surface by sputtering, and patterned to form signal lines, scanning lines, pixel electrodes 201, and the like. In FIG. 16, only the pixel electrode 201 is shown. Thereby, an active matrix substrate is completed.

In this embodiment, an adhesive layer having a height control member and an adhesive surrounded by the height control member is formed on the transfer destination substrate, and the element is transferred thereon. Since the adhesive is surrounded by the height control member constituted by the cylindrical member, the adhesive does not come out of the height control member. Accordingly, it is possible to prevent the adhesive from spreading too far to the periphery and simultaneously adhering to one adhesive layer and transferring the adjacent elements. As a cylindrical member which forms a height control member, what is necessary is just a shape which surrounds an adhesive agent, and the shape of an outer periphery and an inner periphery is not limited. For example, it may be a square such as a square or a rectangle as shown in FIG. 10, or may be a circle or an ellipse. In addition, since the height of the height control member is almost uniform in each adhesive layer, the height differs for each element on the transfer destination substrate, or the transfer destination substrate surface and the element are not parallel. There is no problem and subsequent wiring can be easily performed. The height control member and the adhesive are preferably solid when the active matrix substrate is completed. Since the adhesive does not control the height, it may be a solid having viscosity and further having plasticity and elasticity.

Next, examples of elements that can be used in this embodiment are shown. In this example, two TFTs and an auxiliary capacitor are formed as an element on an element formation substrate, transferred to an intermediate substrate, further transferred to a transfer destination substrate, and then a wiring is formed to form an EL display device. It is.

FIG. 1 is a circuit diagram of one pixel of this EL display device, FIG. 2 is a plan view of one pixel, FIG. 3 is a plan view of an element (part surrounded by a dotted line in FIG. 2) in FIG. FIG. 4 is a cross-sectional view taken along the line A-A ′. The part corresponding to the element in FIG. 2 shows a configuration above the element. EL
The overall view of the display device is such that these pixels are arranged in an array and will be omitted.

  The configuration of the EL display device of this embodiment will be described with reference to these drawings.

First, a circuit of one pixel of the EL display device of this embodiment will be described with reference to FIG. E of this example
One pixel of the L display device includes a signal line 101, a scanning line 102, a scanning TFT 103, and a storage capacitor 1
04, a driving TFT 105, an organic EL unit 106, and a power supply line 107. Note that the contact portion 108 in FIG. 1 indicates the position of the contact portion in FIGS.

The gate of the scanning TFT 103 is connected to the scanning line 102, one of the source and the drain is connected to the signal line 101, and the other is connected to the gate of the storage capacitor 104 and the driving TFT 105. The opposite side of the storage capacitor 104 is connected to the power line 107. One of the source and drain of the driving TFT 105 is connected to the power supply line 107, and the other is connected to the organic EL unit 106.

When light is emitted from the organic EL unit 106 in this pixel, the scanning TFT 103 is turned on at a predetermined timing by the pulse of the scanning line 102, and the image signal from the signal line 101 is driven via the scanning TFT 103. Applied to the gate of the TFT 105. A storage capacitor 104 is interposed between the gate and the power supply line 107. Therefore, even after the scanning line 102 becomes a low level and the signal line 101 and the driving transistor 105 are disconnected, the electric charge does not escape. Therefore, according to the image signal written in the driving transistor 105, the power line 107 A current is supplied to the organic EL unit 106, and the organic EL unit 106 emits light with a predetermined luminance.

  Next, a configuration for realizing the circuit of FIG. 1 will be described with reference to FIGS. 2, 3, and 4.

  First, the element 301 in the pixel will be described with reference to FIGS.

An adhesive layer 404 having a height control member 402 and an adhesive 403 surrounded by the height control member 402 is provided on the transfer destination substrate 401. An under layer (insulating layer) 405 and a buffer layer 406 are stacked on the adhesive layer 404.

On the buffer layer 406, a semiconductor layer 407 of the scanning TFT 103 and the driving TFT 105 is provided at predetermined positions, and a gate insulating film 408 is provided on the entire surface thereof. On the gate insulating film 408, a gate electrode 409 is provided in a region corresponding to the semiconductor layer 407 of the scanning TFT 103 and the driving TFT 105. Gate electrode 4 of driving TFT 105
09 also extends and serves as the lower electrode of the storage capacitor 104.

An interlayer insulating film 410 is provided on the entire surface of the gate electrode 409. TFT1 for scanning
03 and a portion of the semiconductor layer 407 of the driving TFT 105 corresponding to the source region and the drain region are provided with an in-element contact portion 413 by patterning the gate insulating film 408 and the interlayer insulating film 410. In addition, in the portion corresponding to the gate electrode 409 of the scanning TFT 103 and the driving TFT 105, the interlayer insulating film 410 is patterned to provide an in-element contact portion 413.

An in-element wiring 411 that connects one of the source / drain regions of the scanning TFT 103 and the gate electrode 409 of the driving TFT 105 via the in-element contact portion 413.
a is provided. In addition, an in-element wiring 411b that connects the gate electrode 409 of the scanning TFT 103 and the scanning line 102 via the in-element contact portion 413, and the driving TFT 105
In-element wiring 411 c that connects one of the source / drain regions of the TFT and the pixel electrode 201, and in-element wiring 4 that connects the other of the source / drain regions of the driving TFT 105 and the power supply line 107.
11 d, an in-element wiring 411 e that connects the other of the source / drain regions of the scanning TFT 103 to the signal line 101 is provided. These wirings will be described later. The intra-element wiring 411d also serves as the upper electrode of the storage capacitor 104.

A passivation film 412 is provided on the element wiring 411 so as to cover all the elements 301 above the buffer layer 406. The passivation film 412 corresponding to a predetermined region of each intra-element wiring 411 is patterned, and the contact portion 108 is opened.

A protective film 414 is provided on the passivation film 412 so as to cover not only the upper part but also the side part. In the region where the contact portion 108 is provided, the protective film 414 is similarly patterned, and the contact portion 108 is opened.

Next, a region above the element 301 and a region other than the element 301 in one pixel will be described with reference to FIGS.

A transfer destination substrate 401 is provided on the protective film 414 of the element 301 and in a region other than the element 301 of one pixel.
A post-transfer insulating film 415 is directly provided thereon. In-element wiring 411b, 411c, 41
Contact portions 108 are opened in the post-transfer insulating film 415 in the regions corresponding to the predetermined regions 1d and 411e, respectively. Then, on the post-transfer insulating film 415, the scanning line 102 and the element wiring 411 connected to the element wiring 411 b through these contact portions 108.
A pixel electrode 201 connected to c, a power supply line 107 connected to the intra-element wiring 411d, and a signal line 101 connected to the intra-element wiring 411e are provided. In addition, organic E is formed on the pixel electrode 201.
An L portion 106 is provided. The organic EL unit 106 may be configured by laminating a hole injection layer, a light emitting layer, and a cathode in this order.

  Next, a method for manufacturing the EL display device according to this embodiment having the above-described configuration will be described.

In the manufacturing method of the EL display device of this embodiment, first, an element 301 as shown in FIG. 3 and FIG. 4 is formed on an element formation substrate, transferred to an intermediate substrate, and further transferred to a transfer destination substrate. Is formed.

  First, a method for forming the element 301 on the element formation substrate will be described with reference to FIGS.

As an element formation substrate (not shown), an alkali-free glass substrate is used, and an under layer 405 for facilitating element isolation is formed on the entire surface. As the under layer 405, about 1
Alumina (AlO _x ), TaO _x , SiN _x or the like having a thickness of ˜2 μm may be used. Subsequently, SiN _x is formed as a buffer layer 406 on the entire surface of the under layer 405 so as to have a thickness of about 200 nm.

An amorphous silicon semiconductor layer 407 is deposited on the entire surface of the buffer layer 406 by a CVD method so as to have a thickness of about 50 nm. The amorphous silicon semiconductor layer 407 is rapidly heated and crystallized to form a polycrystalline silicon film 407. This polycrystalline silicon film 407 is processed into an island shape by photolithography to form a scanning TFT 103 and a driving TFT.
105 is a semiconductor layer 407.

Next, a SiO ₂ film is formed on the entire surface as a gate insulating film 408 by a CVD method so as to have a thickness of about 150 nm. On the gate insulating film 408, MoW is deposited to a thickness of about 400 nm by sputtering and processed by photolithography to form the gate electrode 409 of the scanning TFT 103 and the driving TFT 105. The gate electrode 409 of the driving TFT 105 also serves as the lower electrode of the storage capacitor 104. Using the gate electrode 409 as a mask, impurities are doped by ion implantation or ion shower to form source / drain regions of the scanning TFT 103 and the driving TFT 105. When forming the source / drain regions, an LDD region may be formed. When forming the LDD region, the resist is used for LD.
A mask covering the D region is provided and implanted at a high dose, and then the resist is removed and implanted at a low dose. In this embodiment, since both the scanning TFT 103 and the driving TFT 105 can be constituted by n-type TFTs, phosphorus is added to the source / drain regions by about 10 ²⁰ c.
Doping may be performed so that m ⁻³ , but the TFT may be a CMOS.
In that case, n-type and p-type impurities such as phosphorus and boron are sequentially doped, and when one of them is doped, the TFT which is not desired to be doped may be covered.

Next, an SiO ₂ film having a thickness of about 400 nm is formed by plasma CVD to form an interlayer insulating film 410. The gate insulating film 408 and the interlayer insulating film 4 at portions corresponding to the source region and the drain region of the semiconductor layer 407 of the scanning TFT 103 and the driving TFT 105.
10 predetermined regions are patterned by photolithography to contact the in-element contact portion 4.
13 is formed. Further, the gate electrode 409 of the scanning TFT 103 and the driving TFT 105 is used.
A predetermined region of the interlayer insulating film 410 corresponding to is also patterned by photolithography to form an in-element contact portion 413.

Next, an Al alloy such as Al—Zr is deposited by sputtering so as to have a film thickness of about 500 to 800 nm, and is patterned by photolithography, so that the in-element wiring 411a,
411b, 411c, 411d, and 411e are formed. Since the intra-element wiring 411 is connected to another electrode at the contact portion 108 later, an oxide film may be generated if the surface remains as an Al alloy, and the contact resistance may increase. Therefore, Mo may be further laminated on the Al alloy so that it is difficult to oxidize or is conductive even if oxidized. In addition, it is preferable to improve the chemical resistance of a region of the in-element wiring 411 that will later become the contact portion 108.
For that purpose, it is preferable to use at least the region to be the contact portion 108 of a refractory metal such as Mo, W or Ta, a noble metal such as Pt or Au, a metal such as Cu or Ni, or an alloy.

The scanning TFT 103 via the element contact portion 413 by the element wiring 411a.
One of the source / drain regions is connected to the gate electrode 409 of the driving TFT 105. Further, the gate electrode 409 and the scanning line 102 of the scanning TFT 103, one of the source / drain regions of the driving TFT 105, the pixel electrode 201, the other of the source / drain regions of the driving TFT 105, and the power supply via the in-element contact portion 413. The signal line 101 is connected to the other of the line 107 and the source / drain region of the scanning TFT 103. Scan line 102, pixel electrode 2
01, the power supply line 107 and the signal line 101 are formed above the in-element wiring 411. Also,
These forming methods will be described later.

Next, in order to separate each element on the element formation substrate into an island shape, the interlayer insulating film 410, the gate insulating film 408, and the buffer layer 406 on the outer periphery of each element are subjected to reactive dry etching (RIE) or the like. To pattern.

A passivation film 412 is formed using SiN _x by a CVD method so as to cover each element. Contact portion 108 of passivation film 412 and each element 30
A region corresponding to the outer peripheral region of 1 is patterned. Further, the protective film 414 is formed using the same AlO _x as the under layer 405 so as to further cover the region covered with the passivation film 412.
Form. In the protective film 414, the contact portion 108 and the region corresponding to the outer peripheral portion region of each element 301 are patterned.

In this embodiment, a passivation film 412 is formed using SiN _x having a low moisture permeability, and an under layer 405 and a protective film 414 are further formed using AlO _x to cover the whole. With such a structure, damage in the transfer process, prevention of bending of the element due to stress relaxation, prevention of contamination from the outside of the element including an adhesive, and improvement of element reliability against moisture are achieved.

Further, the protective film 414 and the passivation film 412 may be made of the same material, and the protective film 414 may also serve as a passivation. In that case, in order to obtain the above effect, AlO _x and Si
A laminated film with N _x , AlSiN _x O _y , TaO _x or the like can be used.

As a method of patterning the passivation film 412 and the protective film 414 to provide the opening 108, after forming a post-transfer insulating film on the whole after a step of transferring an element to a transfer destination substrate described later, This film may be formed by patterning three layers simultaneously. In this case, a protective film cannot be formed on the side surface of the element so as to cover the passivation film, but the influence can be reduced by devising a process for removing the element from the element formation substrate.

Alternatively, the protective film 414 may be formed without element isolation after the passivation film 412 is formed, and then element isolation may be performed. In that case, in order to improve the reliability, the scanning T
It is preferable that the FT 103 and the driving TFT 105 be separated from each other by about 5 to 10 μm from the end when the elements are separated. At the time of element isolation, the under layer 405 may not be separated.

The step of transferring the element formed on the element forming substrate to the intermediate substrate and further transferring to the transfer destination substrate on which the height control member and the adhesive surrounded by the element are formed may be performed by the method described above. The description is omitted.

Next, as shown in FIG. 4, a post-transfer insulating film 415 is formed on the entire surface of the transfer destination substrate 401 to which the element 301 has been transferred using a photosensitive acrylic resin. Contact portion 108 of element 301
The post-transfer insulating film 415 in the region corresponding to is patterned and opened.

Next, as shown in FIG. 2, Al, ITO or the like is formed on the entire surface by sputtering or the like, and patterned using photolithography or the like to form the signal line 101, the scanning line 102, the power supply line 107, and the pixel electrode 201. To do.

After that, as shown in FIG. 2, an organic EL unit 106 is provided on the pixel electrode 201, bonded to a cover substrate, sealed, and wired (not shown) to complete an EL display device. it can.

Further, a liquid crystal display device can be obtained by forming a transparent electrode or the like on a counter substrate to face a transfer destination substrate on which an element is formed, injecting liquid crystal, sealing, and wiring.

In this embodiment, such an element is transferred to a transfer destination substrate on which a height control member and an adhesive are formed, whereby an EL display device having an element whose height is controlled can be formed. Since the height of the element is controlled, there is no variation in the capacitance of the wiring and the element when wiring is performed, and high display quality can be maintained.

In this embodiment, as shown in FIG. 2, the size of one pixel is about 40 μm × about 120 μm.
Since the size of one element is about 40 μm × about 25 μm, the size of the element is about 1/5 of one pixel. In addition, although the element has many manufacturing processes, it is formed on a separate element formation substrate at a high density and transferred. Therefore, if the size of the element formation substrate and the transfer destination substrate are the same,
On one element formation substrate, four or more transfer destination substrates can be formed. It is preferable that a large number of elements having many manufacturing processes can be formed at a time because the cost can be reduced.

Further, in this embodiment, each element is provided on an under layer separated for each element. The under layer relaxes the distortion of the lower layer film of the element, so that the reliability is improved. The strain relief is
Since it prevents changes in element characteristics and prevents peeling defects, it is effective in improving the adhesion reliability during transfer.

In this example, a photosensitive acrylic resin was used as the height control member of the adhesive layer.
The height control member may be a solid that can maintain the height of the adhesive layer, and is not limited thereto. For example, photosensitive resin such as polyimide, BCB, fluorine resin, or PE
Non-photosensitive resins such as materials used as substrates such as T, PES, PEN, and materials formed as processed bodies by embossing or injection molding of the substrates themselves, SiO2 baked with a coating type spin-on glass or from polysilazane _x film, CVD formed SiO _x and SiN _x ,
An inorganic insulating film such as phosphorus glass is also preferable because the height of the adhesive layer can be controlled.

In this embodiment, an ultraviolet curable adhesive is used as the adhesive for the adhesive layer. However, the adhesive may be any material that can adhere to the element when the active matrix substrate is completed, and is not limited thereto. It is not a thing. For example, an adhesive such as a thermosetting adhesive, a thermoplastic adhesive, an elastic adhesive, an alloy adhesive, or the like is preferable in order to favorably adhere to the element. Examples of the material of these adhesives include one-pack, two-pack epoxy resin, acrylic resin, melamine resin, polyimide resin, polyester resin, polybenzimidazole resin, phenol resin, urea resin, resorcinol resin, cellulose acetate, Nitrocellulose, polyvinyl acetate,
There are polyvinylidene chloride, polyamide, cyanoacrylate, polyurethane rubber, silicone rubber, acrylic emulsion and the like. These adhesives may be liquid when formed and subsequently cured. And you may form by the method of dripping predetermined amount from a nozzle. The dropping may be dispensed by a mechanical pump or a piezoelectric element, or may be driven so that the droplets fly in the air. Further, it may be formed by a method such as mechanically placing a piece cut into small pieces as a solid from the time of forming the adhesive, or placing it by suction with an electrostatic force. Since the adhesive does not control the height, it may be a solid having plasticity or elasticity.

In this embodiment, a glass substrate is used as a transfer destination substrate. However, a plastic substrate, a resin film, a ceramic substrate, a metal thin plate substrate, or the like can be used. Conventionally, plastic substrates, resin films, and the like are lightweight, but cannot be precisely formed as high-definition active matrix substrates due to thermal deformation and the coefficient of thermal expansion. However, in this embodiment, since the element formation including the thermal process is performed on the element formation substrate and transferred, the lightweight substrate can be selected regardless of the material of the transfer destination substrate. is there.

Next, FIG. 17 shows a modification of the transfer process from the intermediate substrate to the transfer destination substrate of this embodiment. First
The same components as those of the embodiment are designated by the same reference numerals and the description thereof is omitted.

In this modification, an intermediate substrate mask 1701 is further provided on the intermediate substrate 601 as shown in FIG. When the intermediate substrate 601 is thick, if light is irradiated only through the glass mask 1201, the element 301 that is not selected may be irradiated with light. However, by providing the intermediate substrate mask 1701 in this way, the boundary of the light irradiation region can be clarified and the selectivity of the element 301 to be transferred can be improved. In the case of this modification, the selectivity is improved without providing a light converter. Therefore, this is particularly effective when the adhesive / peeling layer 603 whose adhesive strength is reduced by ultraviolet light is used, and when there is no suitable material as a light converter. Even when the size of the element 301 to be transferred is as small as about 20 to 40 μm, it is effective because the adhesive / peeling layer 603 can be peeled with high spatial accuracy. Also in this modified example, since the adhesive layer 404 selectively adheres only one element 301 by the adhesive 403 and the height control member 402, the adhesion between the element 301 and the adhesive layer 404 and the adhesion / release layer 603 It is possible to ensure comprehensive selectivity by peeling off.

Note that, instead of providing the glass mask 1201 or the intermediate substrate mask 1701, only the element 301 to be transferred may be selectively irradiated with the beam light by using irradiation light as a laser or the like.

Next, a second embodiment of the present invention will be described. This embodiment differs from the first embodiment in the shape of the adhesive layer formed on the transfer destination substrate. In this embodiment, the steps other than the adhesive layer may be performed in the same manner as in the first embodiment, and the description other than the adhesive layer is omitted.

A sectional view showing one element of the active matrix substrate of this embodiment is shown in FIG.
A plan view of the adhesive layer corresponding to one element is shown in FIG. As shown in FIG. 18B, this example has the same configuration as that of Example 1 except that the shape of the inner periphery of the height control member 402 of the adhesive layer 404 is a circle. A broken line in FIG. 18B indicates the outer periphery of the element 301.

In the present embodiment, the inner peripheral shape of the height control member 402 is a curved surface having a curvature, so that the spread adhesive 403 and height when the element 301 is pressed against the adhesive layer 404 are increased. A gap with the control member 402 can be reduced. When a highly viscous liquid adhesive is used as the adhesive 403, a particularly high effect can be obtained because the shape pressed by the element 301 will have a curved surface. As shown in FIG. 18, when the outer periphery of the height control member 402 has a shape close to a square, the shape of the inner periphery of the height control member 402 is preferably circular. The same effect can be obtained if the inner peripheral shape of the height control member 402 is a curved surface having a curvature corresponding to the outer peripheral shape of the height control member 402. The radius of curvature of the inner circumference of the height control member 402 depends on the viscosity of the material of the adhesive 403, but if it is about 1/5 to 1/2 of the length of one side of the height control member 402, good. The material, formation method, and the like of the height control member 402 may be the same as those in the first embodiment.

Next, a third embodiment of the present invention will be described. This embodiment differs from the first embodiment in the shape of the adhesive layer formed on the transfer destination substrate. In this embodiment, the steps other than the adhesive layer may be performed in the same manner as in the first embodiment, and the description other than the adhesive layer is omitted.

A sectional view showing one element of the active matrix substrate of this embodiment is shown in FIG.
FIG. 19B shows a plan view of the adhesive layer corresponding to one element, and FIG. 19C shows a plan view of one element.
). In this embodiment, as shown in FIG. 19B, the height control member 402 of the adhesive layer 404 is used.
Is provided so as to surround the adhesive 403 with a notch (cut) 1901.
The configuration is the same as that of the embodiment. A broken line in FIG. 19B indicates the outer periphery of the element 301.

In this embodiment, the height control member 402 has the notch 1901 in this way, and the adhesive 40
3, even if the amount of the adhesive 403 is somewhat large, excess adhesive 403 passes through the notch 1901 and goes out of the height control member 402. This is preferable because the height and spread size of the adhesive layer 404 can be controlled without strictly controlling the amount of the adhesive 403. Further, the shape of the notch 1901 is narrow at the portion near the inner periphery of the height control member 402 and wide at the portion near the outer periphery, so that the height of the adhesive coming out from the notch 1901 can be controlled in height. The height of the member 402 can be made lower and adhesion to an adjacent element can be prevented. Further, the position of the notch 1901 is provided at a location different from the position corresponding to the contact portion 108 of the element 301 as shown in FIG. The occurrence of contact failure can be reduced even if it is covered with mist.

Next, a fourth embodiment of the present invention will be described. This embodiment differs from the first embodiment in the shape of the adhesive layer formed on the transfer destination substrate. In this embodiment, the steps other than the adhesive layer may be performed in the same manner as in the first embodiment, and the description other than the adhesive layer is omitted.

A cross-sectional view showing one element of the active matrix substrate of this embodiment is shown in FIG.
A plan view of the adhesive layer corresponding to one element is shown in FIG. A region indicated by a broken line in FIG. 20B is a position corresponding to the element 301. In the present embodiment, as shown in FIG. 20B, the element 301 is the first except that the element 301 is provided on the inner side of the inner periphery of the height control member 402 of the adhesive layer 404.
The configuration is the same as that of the embodiment.

In this embodiment, when the element 301 is transferred from the intermediate substrate to the transfer destination substrate, the element 30
In order to prevent the adhesive / peeling layer around 1 from coming into contact with the height control member 402 and being pressed further, the height of the adhesive layer 404 is made constant as in the first embodiment, The element can be transferred so as to be substantially parallel. Also, since the height can be controlled, the adhesive 403
You can also prevent the spread of. In this embodiment, it is preferable to provide the element 301 on the inner side of the inner periphery of the height control member 402 because the contact area between the element 301 and the adhesive 403 can be increased and the adhesive force is increased.

Next, a fifth embodiment of the present invention will be described. This embodiment differs from the first embodiment in the shape of the adhesive layer formed on the transfer destination substrate. In this embodiment, the steps other than the adhesive layer may be performed in the same manner as in the first embodiment, and the description other than the adhesive layer is omitted.

A cross-sectional view showing one element of the active matrix substrate of this embodiment is shown in FIG.
A plan view of the adhesive layer corresponding to one element is shown in FIG. In the present embodiment, FIG.
As shown in FIG. 5, the height control member 402 of the adhesive layer 404 is not only provided so as to surround the adhesive 403, but the second height control member 2101 is provided below the element 301 region,
The configuration is the same as that of the first embodiment.

In this embodiment, the second height control member 2101 may be formed by photolithography using a photosensitive acrylic resin such as HRC manufactured by JSR, an epoxy resin, a novolac resin, or the like. Further, the height control member 402 and the second height control member 2101 may be formed simultaneously. For example, if a photosensitive acrylic resin is formed on the entire surface and exposed and developed with a photomask corresponding to the shape of the height control member 402 and the second height control member 2101, two height controls having the same height are controlled. A member can be realized. In this embodiment, the height control of the element 301 can be more reliably performed by providing the second height control member 2101 under the region corresponding to the element 301. This is particularly effective when the size of the element is made smaller than the inner circumference of the height control member as in the fourth embodiment. The area of the second height control member 2101 provided under the element 301 region is preferably about 0.1 to 0.8 times the area of the element 301. When the strength against deformation of the element 301 is weak, the area of the second height control member 2101 is preferably large in order to reduce damage to the element 301. In particular, when the area to be transferred at a time is large and the pressure for pressing the intermediate substrate 601 and the transfer destination substrate 401 varies depending on the location, the above area is about 0.5 times or more. It is preferable for reducing damage.

Next, a sixth embodiment of the present invention will be described. This embodiment differs from the first embodiment in the shape of the adhesive layer formed on the transfer destination substrate. In this embodiment, the steps other than the adhesive layer may be performed in the same manner as in the first embodiment, and the description other than the adhesive layer is omitted.

A sectional view showing one element of the active matrix substrate of this embodiment is shown in FIG.
A plan view of the adhesive layer corresponding to one element is shown in FIG. In the present embodiment, FIG.
As shown in FIG. 3, the height control member 402 of the adhesive layer 404 is not provided so as to surround the adhesive 403, but the adhesive 403 surrounds the periphery of the height control member 402 as in the first embodiment. It is the same composition.

In this embodiment, the height control member 402 may be formed by forming a plurality of small height control members 402 at the time of patterning, and the bonding portion 403 is made of a material that can maintain the shape when formed. What is necessary is just to form in a predetermined shape by printing etc. The shape of the adhesive 403 is
An element close to the shape of the element 301 is preferable. In this embodiment, the height control member 402 is not provided so as to surround the adhesive 403. However, since the height control member 402 is provided, the height can be increased even if the element 301 is pressed as in the other embodiments. It becomes constant. The adhesive 403 itself maintains its shape, and the height control member 402 prevents the element 301 from being pressed.
The spread of 03 can also be suppressed. Materials that can be formed by printing, etc., and that maintain the shape of the adhesive 403 itself include adhesives for liquid crystal main seals blended with thickeners as printing ink, UV curable epoxy resins, thermosetting epoxy resins, acrylics Resins can also be used.

Next, a seventh embodiment of the present invention will be described. This embodiment differs from the first embodiment in the shape of the adhesive layer formed on the transfer destination substrate. In this embodiment, the steps other than the adhesive layer may be performed in the same manner as in the first embodiment, and the description other than the adhesive layer is omitted.

A sectional view showing one element of the active matrix substrate of this embodiment is shown in FIG.
A plan view of the adhesive layer corresponding to one element is shown in FIG. In the present embodiment, FIG.
As shown in FIG. 4, the height control member 402 of the adhesive layer 404 is not provided so as to surround the adhesive 403, but the first embodiment is different from the first control except that the height control member 402 is dispersed in the adhesive 403. The configuration is the same as that of the example.

In this embodiment, the adhesive layer 404 may be formed by printing with the height control member 402 dispersed in the adhesive 403. The height control member 402 may be dispersed in the adhesive 403 in a columnar shape, a spherical shape, a fiber, a bead shape or the like using silica, SiN _x , polyester, polyethylene, acrylic resin, or the like. Also in this embodiment, the height control member 40
2, as in the other embodiments, the height is constant even when the element 301 is pressed, and the spread of the adhesive 403 can be suppressed. Further, in this embodiment, since there is no process for forming the height control member 402, there is an effect of reducing the manufacturing process of the active matrix substrate.

Next, an eighth embodiment of the present invention will be described. This embodiment differs from the first embodiment in the shape of the adhesive layer formed on the transfer destination substrate. In this embodiment, the steps other than the adhesive layer may be performed in the same manner as in the first embodiment, and the description other than the adhesive layer is omitted.

A sectional view showing one element of the active matrix substrate of this embodiment is shown in FIG.
A plan view of the adhesive layer corresponding to one element is shown in FIG. In the present embodiment, FIG.
As shown, the height control member 402 of the adhesive layer 404 has the same configuration as that of the first embodiment except that the adhesive 403 not only surrounds the adhesive 403 but also partially covers the upper part of the adhesive 403. FIG.
The broken line b) shows the outer periphery of the element 301.

In this embodiment, the adhesive 403 is first formed by printing or the like. This can be realized by joining the height control member 402 molded in advance with plastic or the like to the transfer destination substrate 401. Thereafter, in the same manner as in the other embodiments, the element 301 is pressed to adhere the adhesive 403 coming out from the upper surface of the height control member 402 to the element 301. Also in this embodiment, as in the other embodiments, the height is constant even when the element 301 is pressed, and the spread of the adhesive 403 can be suppressed. Further, in this embodiment, since the side portion and part of the upper portion of the adhesive 403 are covered with the height control member 402, the margin of the adhesive can be greatly widened, and the yield at the time of bonding the element 301 is increased. It is also effective for improvement.

  It is also possible to combine these various embodiments.

1 is a circuit diagram showing one pixel of an active matrix substrate according to a first embodiment of the present invention. 1 is a plan view showing one pixel of an active matrix substrate according to a first embodiment of the present invention. 1 is a plan view showing an element of one pixel of an active matrix substrate according to a first embodiment of the present invention. It is sectional drawing which shows between AA 'of FIG. It is sectional drawing which shows 1 process of the manufacturing method of the active matrix substrate which concerns on the 1st Embodiment of this invention. (A), (b) is sectional drawing which shows 1 process of the manufacturing method of the active matrix substrate which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows 1 process of the manufacturing method of the active matrix substrate which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows 1 process of the manufacturing method of the active matrix substrate which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows 1 process of the manufacturing method of the active matrix substrate which concerns on the 1st Embodiment of this invention. It is a top view which shows 1 process of the manufacturing method of the active matrix substrate which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows 1 process of the manufacturing method of the active matrix substrate which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows 1 process of the manufacturing method of the active matrix substrate which concerns on the 1st Embodiment of this invention. It is a top view which shows 1 process of the manufacturing method of the active matrix substrate which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows 1 process of the manufacturing method of the active matrix substrate which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows 1 process of the manufacturing method of the active matrix substrate which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows 1 process of the manufacturing method of the active matrix substrate which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows 1 process of the manufacturing method of the active matrix substrate which concerns on the modification of the 1st Embodiment of this invention. (A), (b) is a figure explaining 1 process of the manufacturing method of the active matrix substrate of the 2nd Embodiment of this invention, (a) is sectional drawing, (b) is a top view. (A), (b), (c) is a figure explaining 1 process of the manufacturing method of the active matrix substrate of the 3rd Embodiment of this invention, (a) is sectional drawing, (b), (c) ) Is a plan view. (A), (b) is a figure explaining 1 process of the manufacturing method of the active matrix substrate of the 4th Embodiment of this invention, (a) is sectional drawing, (b) is a top view. (A), (b) is a figure explaining 1 process of the manufacturing method of the active matrix substrate of the 5th Embodiment of this invention, (a) is sectional drawing, (b) is a top view. (A), (b) is a figure explaining 1 process of the manufacturing method of the active matrix substrate of the 6th Embodiment of this invention, (a) is sectional drawing, (b) is a top view. (A), (b) is a figure explaining 1 process of the manufacturing method of the active matrix substrate of the 7th Embodiment of this invention, (a) is sectional drawing, (b) is a top view. (A), (b) is a figure explaining 1 process of the manufacturing method of the active matrix substrate of the 8th Embodiment of this invention, (a) is sectional drawing, (b) is a top view. It is sectional drawing which shows 1 process of the manufacturing method of the conventional active matrix substrate.

Explanation of symbols

101, 502 ... signal lines 102, 2503 ... scanning line 103 ... scanning TFT
104 ... Storage capacitor 105 ... TFT for driving
106 ... Organic EL part 107 ... Power line 108 ... Contact part 201 ... Pixel electrode 301 ... Element 401, 2501 ... Transfer destination substrate 402 ... Height control member 403 ... Adhesive 404, 2506 ... Adhesive layer 405, 2511 ... Under layer 406 ... Buffer layer 407 ... Semiconductor layer 408 ... Gate insulating film 409 ... Gate electrodes 410, 2504 ... Interlayer insulating films 411a, 411b, 411c, 411d, 411e ... Intra-element wiring 412 ... Passivation film 413 ... Intra-element contact portions 414, 2509 ... Protective film 501 ... Element formation substrate 601,2507 ... Intermediate substrate 602,604 ... Light converter 603,2508 ... Adhesive / peeling layer 1201 ... Glass mask 1701 ... Intermediate substrate mask 1901 ... Notch 2101 ... Second height control member 2505 ... Planarization film 2510 ... TFT
2512 ... Shading mask

Claims (12)

A substrate,
An active element formed on the substrate;
In-element wiring whose one end is connected to the electrode of the active element;
An external wiring to which the other end of the in-element wiring is connected via a contact portion;
An active matrix substrate, wherein the external wirings intersect internal wirings or internal wirings and external wirings. A substrate,
An active element formed on the substrate;
In-element wiring whose one end is connected to the first electrode of the active element;
A first external wiring to which the other end of the in-element wiring is connected via a contact portion;
A second external wiring connected to the second electrode of the active element via a contact portion, wherein the internal wiring and the second external wiring intersect on a plane pattern Active matrix substrate. The active matrix substrate according to claim 1, wherein an adhesive layer is provided between the substrate and the active element, and the adhesive layer is surrounded by a height control member. The adhesive layer is provided between the substrate and the active element, and particles having a predetermined shape serving as a height control member are dispersed in the adhesive layer. The active matrix substrate as described. 2. The external wiring is formed in a layer above the internal wiring.
5. The active matrix substrate according to any one of 4 to 4. The active matrix substrate according to claim 1, wherein the intra-element wiring connects the active element and a pixel electrode. The active matrix substrate according to claim 1, wherein the external wiring is made of Al or ITO. 8. The active matrix substrate according to claim 1, wherein the active element includes a scanning TFT and a driving TFT. The active matrix substrate according to claim 1, wherein the external wiring includes a scanning line and a signal line. 10. The active device according to claim 1, wherein the first external wiring is divided into two parts by the active element, each of which is connected by the internal wiring of the active element. 11. Matrix substrate. The active element includes a TFT and a capacitor.
The active matrix substrate according to any one of 0. An active matrix substrate according to any one of claims 1 and 2,
A pixel electrode connected to the intra-element wiring in the active matrix substrate;
An organic EL portion formed on the pixel electrode.

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