JP2005236095A - Heating and cooling method of substrate, and heating and cooling equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heating and cooling method of a substrate which can effectively perform the heating and cooling of the substrate in a short time and can make a temperature in a panel surface after cooling uniform, and to provide heating and cooling equipment. <P>SOLUTION: In the heating and cooling method of a substrate, a substrate 60 is heated only from the one side by a heat sources 56, and a temperature difference is set to 50-400°C between the temperatures of a substrate surface and a substrate rear surface in each position inside the substrate surface when the temperature of one side of the substrate becomes maximum. After heating, the cooling of one side of the substrate is performed by using at least the substrate itself as a cooling source. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method for heating and cooling a substrate and a heating and cooling apparatus.

  In recent years, processes for efficiently heating and cooling a substrate have been developed in fields such as semiconductors and flat panel displays. For example, according to the substrate heating and cooling technique disclosed in Patent Document 1, a radiation endothermic layer is formed on the inner surface of the cooling chamber by a method such as applying a substance having a high emissivity, and the substrate installed in the cooling chamber is formed. Heat is efficiently absorbed by the radiation heat absorption layer. A cooling water channel is provided in the cooling chamber, and the absorbed heat of the substrate is quickly exhausted by the cooling water flowing through the cooling water channel.

  According to the substrate heating / cooling technique disclosed in Patent Document 2, the substrate heated in the heating chamber is transferred to the cooling chamber and cooled by the cooling plate. The cooling plate is made of a metal having a high emissivity, and is maintained at a temperature around -190 ° C. by liquid nitrogen flowing through a cooling pipe provided inside. Thus, the time for cooling the substrate can be shortened from 8 hours to 5 minutes.

According to the substrate heating / cooling technique disclosed in Patent Document 3, the substrate carried into the heat treatment chamber is heated by the heating source through the transmission window. After heating, the heating source is stopped and the substrate is cooled. At this time, the radiant heat from the substrate is absorbed by the bottom of the heat treatment chamber, and the temperature drop rate is accelerated. A cooling water passage is formed inside the bottom, and the surface is treated to increase the emissivity. Moreover, in order to enlarge a surface area, the technique which gives an uneven | corrugated process and an inclination process to the surface of a bottom part is disclosed.
JP 7-216550 A JP-A-8-222130 JP 2001-284280 A

As described above, methods for shortening the heating and cooling time of the substrate by various methods have been proposed. However, in order to mass-produce products, it is important to further shorten the heating and cooling time.
By the way, the purpose of heating and cooling the substrate performed in the fields related to semiconductors and flat panel displays is to perform annealing and degassing on the formation surface of the substrate processed up to the previous step. However, the conventional heating / cooling method heats and cools the entire substrate, and is not an efficient method. In particular, the thicker the substrate, the larger the heat capacity of the substrate and the longer the cooling time. For example, a silicon wafer has a thin substrate thickness of 0.2 to 0.5 mm, but a glass used in connection with a flat display has a substrate thickness of about 3 mm, which greatly affects heating and cooling time. Furthermore, since the cooling proceeds from the peripheral part of the substrate to the central part, the substrate temperature after cooling is lower in the peripheral part than in the central part, which causes a problem in the next processing step.

  The present invention has been made in view of the above points. The purpose of the present invention is to efficiently and quickly heat and cool the surface of the substrate that needs to be heat-treated, and to uniformize the temperature in the panel surface after cooling. Another object of the present invention is to provide a heating / cooling method and heating / cooling device for a substrate.

  In order to solve the above-described problem, a substrate heating / cooling method according to an aspect of the present invention heats a substrate only from one side thereof, and the substrate at each position in the substrate surface when the temperature of one side of the substrate becomes maximum. The temperature difference between the front and back surfaces is 50 ° C to 400 ° C.

  Further, the substrate heating / cooling method according to the aspect of the present invention is such that the substrate is heated only from one side thereof, and the temperature difference between the front and back surfaces of the substrate at each position in the substrate surface when the temperature of one side of the substrate becomes maximum. Is set to 50 ° C. to 400 ° C., and after heating, the one side of the substrate is cooled using at least the substrate itself as a cooling source.

  A heating / cooling device according to an aspect of the present invention includes a heating source provided facing one side of a substrate, and the substrate is heated only from one side by the heating source so that the temperature on one side of the substrate becomes maximum. And a controller that controls the heating source so that the temperature difference between the front and back surfaces of the substrate at each position within the substrate surface is 50 ° C to 400 ° C.

  According to the above-described heating / cooling method and heating / cooling device for a substrate, a surface that requires heat treatment of the substrate is heated in a short time by heating only one side of the substrate, rather than heating the entire substrate during heating. Can be processed. The substrate is cooled by heat exchange within the substrate using the substrate itself as a cooling source. Therefore, it can be performed efficiently and in a shorter time than cooling the substrate with thermal radiation. Since the substrate cooling rate is determined by the substrate thickness, the temperature after cooling is constant at any substrate position as long as the substrate thickness is constant.

  ADVANTAGE OF THE INVENTION According to this invention, the surface which needs the heat processing of a board | substrate can be heated and cooled efficiently and in a short time, and the heating-cooling method and heating of a board | substrate which can make the temperature in the substrate surface after cooling uniform A cooling device can be provided.

A substrate heating / cooling method and heating / cooling apparatus according to an embodiment of the present invention will be described below in detail with reference to the drawings.
As shown in FIGS. 1 and 2, the heating / cooling device includes a vacuum chamber 50 and a vacuum pump 52 that evacuates the vacuum chamber, and the degree of vacuum in the vacuum chamber is 1 × 10 −3 to 1 × 10 −5 Pa. Is maintained in the range. In the vacuum chamber 50, a support mechanism 54 for horizontally supporting the substrate 60 to be an initial target, a heating rod 56 as a heating source, and a moving mechanism 58 for moving the heating rod relative to the substrate are provided. .

  For example, the heating rod 56 has a rectangular cross-sectional shape, extends substantially horizontally, and faces the upper surface of the substrate 60 supported by the support mechanism 54 in parallel with a predetermined distance. The heating rod 56 is made of, for example, a material containing a pure metal or alloy of tungsten (W). Both ends of the heating rod 56 are supported by the guide rails 62 of the moving mechanism 58 so as to be movable along the horizontal direction. The moving mechanism 58 includes a drive unit 64 that moves both ends of the heating rod 56 along the guide rail 62. Thereby, the heating rod 56 can move in parallel with the substrate surface while maintaining a predetermined distance from the upper surface of the substrate 60.

  Both ends of the heating rod 56 are electrically connected to a direct current power source 66 disposed outside the vacuum chamber 50. The heating rod is heated to a desired temperature by energizing the heating rod 56 from the DC power supply 66. One end of the heating rod 56 is connected to the moving mechanism 58 via an elastic member 67 such as a spring. Thereby, even when the heating rod 56 expands due to heating, the heating rod can be prevented from being bent and the distance from the upper surface of the substrate 60 can be kept constant. A controller 68 that controls the heating temperature, heating time, and moving speed of the heating rod 56 is connected to the drive unit 64 and the DC power supply 66 of the moving mechanism 58.

Next, a method for heating and cooling the substrate by the heating and cooling apparatus will be described.
First, a substrate 60 having a thickness of 1.2 mm or more to be processed is carried into the vacuum chamber 50 and supported horizontally by the support mechanism 54. At this time, the substrate 60 is supported so that the surface to be processed is on the heating rod 56 side. Thereafter, the vacuum chamber 50 is evacuated to a predetermined degree of vacuum.

  Subsequently, under the control of the control unit 68, the heating rod 56 is energized from the DC power supply 66 to heat the heating rod 56 to a high temperature of 2000 ° C. or higher. With the distance between the heating rod 56 and the upper surface of the substrate 60 maintained, the moving mechanism 58 moves the heating rod 56 in the horizontal direction from one end side to the other end side of the substrate 60. By this operation, the upper surface side of the substrate 60 is heated in the order in which the heating rod 56 passes, and the heating rod scans from one end to the other end of the upper surface of the substrate, thereby completing the heating. At this time, only one side of the substrate 60, that is, the upper surface side is heated by the heating rod 56, and the back surface of the substrate is not heated.

  Next, the energization of the heating rod 56 is stopped, and the heating rod is separated from the substrate 60, thereby starting the cooling process for the substrate 60. In the cooling process, the substrate 60 itself is used as a cooling source, and the substrate is cooled by heat exchange between a relatively unheated region in the substrate and near the back surface of the substrate and a heated region on the upper surface side of the substrate.

  FIG. 3 shows a temperature change state of the upper surface of the substrate in the heating and cooling process described above. The temperature measurement location was the point X described in FIG. As shown by a solid line A in FIG. 3, the temperature of the upper surface of the substrate 60 is heated from 25 ° C. to 340 ° C. by heat treatment. On the other hand, the temperature of the back surface of the substrate 60 at the same position at this time was 70 ° C. or lower as indicated by a broken line B. In the cooling process, the temperature of the substrate surface is rapidly cooled by heat exchange of the substrate 60 itself so that the temperature of the entire substrate becomes uniform. The time until the substrate 60 became 100 ° C. or lower was 3 minutes, and the substrate 60 could be cooled in a short time.

  By raising the temperature of the heating source and heating quickly, only the surface side of the substrate 60 can be heated, and the heating and cooling time can be shortened. That is, it is desirable to heat only one side of the substrate 60 in a short time and increase the temperature difference between the front and back surfaces of the substrate 60. In order to maximize the temperature difference between the front surface and the back surface of the substrate 60, it is desirable that the temperature of the back surface of the substrate is the temperature before heating when the temperature of the substrate surface is the highest temperature. However, the temperature on the back surface of the substrate 60 slightly increases due to the heat treatment. Therefore, in practice, when the maximum temperature on the surface of the substrate 60 is 450 ° C. to 550 ° C., the temperature difference between the substrate surface and the back surface is limited to 400 ° C. On the other hand, the minimum temperature difference between the front surface and the back surface of the substrate can be zero as much as possible. However, in this case, the entire substrate 60 is heated, and the heating and cooling time becomes long. Therefore, in order to obtain the effect of shortening the cooling time, the temperature difference between the front surface and the back surface of the substrate is desirably 50 ° C. or higher and 400 ° C. or lower. Such a temperature difference can be adjusted by controlling the heating temperature, heating time, and moving speed of the heating rod 56 by the control unit 68.

  According to the heating / cooling method and heating / cooling apparatus for a substrate configured as described above, the substrate needs to be heat-treated by heating only one side of the substrate, rather than heating the entire substrate during heating. The surface can be heat-treated in a short time. The substrate is cooled by heat exchange within the substrate using the substrate itself as a cooling source. Therefore, it is possible to efficiently cool the substrate in a shorter time than when the substrate is cooled by heat radiation. Since the substrate cooling rate is determined by the substrate thickness, the temperature after cooling is constant at any substrate position as long as the substrate thickness is constant.

  The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, when processing a large substrate, it is necessary to increase the length of the heating rod 56, and the heating rod may be loosened by its own weight. In this case, it is desirable that the heating rod be appropriately changed to a shape that does not bend due to its own weight. For example, as shown in FIGS. 4 (a), 4 (b), and 4 (c), the heating rod 56 may be formed so that the cross-sectional shape is concave, L-shaped, or T-shaped. It is better to select the heat source shape according to the target substrate size.

  When processing a large substrate, since it takes time to move the heat source, a plurality of heating rods may be provided and different regions on the substrate surface may be heated independently. In this embodiment, the heating source is scanned, but the heating source may be fixed and the substrate may be moved. Alternatively, a heating source having a size approximately the same as the surface area of the substrate to be processed may be provided, and the substrate may be heated without moving the substrate and the heating source relatively.

  The material for forming the heat source is not limited to tungsten, but may be any material having a low vapor pressure and a high melting point, such as a pure metal such as tantalum (Ta), osmium (Os), rhenium (Re), or molybdenum (Mo). The alloy may be used. Further, the material itself may not be used as long as the heating source can heat the substrate surface side. Therefore, the heating source may be a lamp. For example, if it is a condensing lamp or a halogen lamp, the substrate surface side can be heated relatively efficiently.

Next, an embodiment in which the heating / cooling device and the heating / cooling method described above are applied to manufacture of an FED as a flat display device will be described. First, the configuration of the FED will be described.
As shown in FIGS. 5 and 6, the FED includes a first substrate 11 and a second substrate 12 each made of a rectangular glass substrate, and these substrates have a gap of about 1.0 to 3.0 mm. Corresponding arrangement. The 1st board | substrate 11 and the 2nd board | substrate 12 comprise the flat vacuum envelope 10 by which the peripheral part was joined through the rectangular frame-shaped side wall 13 which consists of glass, and the inside was maintained at the vacuum.

  The side wall 13 functioning as a bonding member is sealed to the inner peripheral edge portion of the second substrate 12 by, for example, a low melting point glass 30 such as frit glass. Further, the first substrate 11 and the side wall 13 are sealed by a sealing layer 33 in which the base layers 31a and 31b formed on the sealing surface and the indium layer 32 formed on the base layer are fused. Has been. Thereby, the side wall 13 and the sealing layer 33 airtightly join the peripheral portions of the first substrate 11 and the second substrate 12 to define a sealed space between the first and second substrates.

  In order to support an atmospheric pressure load applied to the first substrate 11 and the second substrate 12, a plurality of plate-like support members 14 made of glass, for example, are provided inside the vacuum envelope 10. These support members 14 extend in a direction parallel to the short side of the vacuum envelope 10 and are arranged at a predetermined interval along a direction parallel to the long side. The shape of the support member 14 is not particularly limited to this, and a columnar support member may be used.

  As shown in FIG. 7, a phosphor screen 16 that functions as a phosphor screen is formed on the inner surface of the first substrate 11. The phosphor screen 16 includes a plurality of phosphor layers 15 that emit red, green, and blue light, and a plurality of light shielding layers 17 formed between the phosphor layers. Each phosphor layer 15 is formed in a stripe shape, a dot shape, or a rectangular shape. On the phosphor screen 16, a metal back layer 18 and a getter film 19 made of aluminum or the like are sequentially formed.

  On the inner surface of the second substrate 12, many electron-emitting devices 22 that emit electron beams are provided as electron sources that excite the phosphor layer 15 of the phosphor screen 16. More specifically, a conductive cathode layer 24 is formed on the inner surface of the second substrate 12, and a silicon dioxide film 26 having a large number of cavities 25 is formed on the conductive cathode layer. A gate electrode 28 made of molybdenum, niobium or the like is formed on the silicon dioxide film 26. A cone-shaped electron-emitting device 22 made of molybdenum or the like is provided in each cavity 25 on the inner surface of the second substrate 12. These electron-emitting devices 22 are arranged in a plurality of columns and a plurality of rows corresponding to each pixel. In addition, on the second substrate 12, a large number of wirings 21 for supplying a potential to the electron-emitting devices 22 are provided in a matrix shape, and end portions thereof are drawn out of the vacuum envelope 10.

  In the FED configured as described above, a video signal is input to the electron-emitting device 22 and the gate electrode 28. When the electron-emitting device 22 is used as a reference, a gate voltage of +100 V is applied when the luminance is highest. Further, +10 kV is applied to the phosphor screen 16. The magnitude of the electron beam emitted from the electron-emitting device 22 is modulated by the voltage of the gate electrode 28, and this electron beam excites the phosphor layer of the phosphor screen 16 to emit light, thereby displaying an image. . Since a high voltage is applied to the phosphor screen 16, high strain point glass is used for the plate glass for the first substrate 11, the second substrate 12, the side wall 13, and the support member 14. Further, the first substrate 11 and the second substrate 12 are formed with a plate thickness of, for example, 1.5 mm or more.

Next, the manufacturing method of FED which has the said structure is demonstrated.
First, the phosphor screen 16 is formed on the plate glass to be the first substrate 11. In this method, a plate glass having the same size as the first substrate 11 is prepared, and a phosphor stripe pattern is formed on the plate glass by a plotter machine. The plate glass on which the phosphor stripe pattern is formed and the plate glass for the twelfth substrate are placed on a positioning jig and set on an exposure table. In this state, the phosphor screen is formed on the glass plate to be the first substrate 11 by exposure and development. Thereafter, a metal back layer 18 is formed on the phosphor screen 16.

  Subsequently, the electron-emitting device 22 is formed on the plate glass for the second substrate 12. First, a conductive cathode layer 24 is formed on a plate glass, and an insulating film of a silicon dioxide film is formed on the cathode layer by, for example, a thermal oxidation method, a CVD method or a sputtering method. Thereafter, a metal film for forming a gate electrode such as molybdenum or niobium is formed on the insulating film by, for example, sputtering or electron beam evaporation. Next, a resist pattern having a shape corresponding to the gate electrode to be formed is formed on the metal film by lithography. Using this resist pattern as a mask, the metal film is etched by wet etching or dry etching to form the gate electrode 28.

  Thereafter, the insulating film is etched by wet etching or dry etching using the resist pattern and the gate electrode 28 as a mask to form the cavity 25. Then, after removing the resist pattern, a peeling layer made of, for example, aluminum or nickel is formed on the gate electrode 28 by performing electron beam evaporation from a direction inclined at a predetermined angle with respect to the second substrate surface. Thereafter, for example, molybdenum is deposited by electron beam evaporation as a material for forming the cathode from a direction perpendicular to the surface of the second substrate. As a result, the electron-emitting device 22 is formed inside the cavity 25. Next, the release layer is removed together with the metal film formed thereon by a lift-off method.

  Subsequently, the side wall 13 and the support member 14 are sealed on the inner surface of the second substrate 12 by the low melting point glass 30 in the atmosphere. Thereafter, a base layer 31b is formed over the entire circumference of the sealing surface of the side wall 13, and indium is filled to a predetermined width and thickness on the base layer to form an indium layer 32. Similarly, a base layer 31a is formed on the sealing surface facing the side wall of the first substrate 11, and indium is filled in a rectangular frame shape with a predetermined width and thickness on the base layer to form an indium layer 32. .

  As the metal sealing material, it is desirable to use a low melting point metal material having a melting point of about 350 ° C. or less and excellent adhesion and bondability. Indium (In) used in the present embodiment has not only a low melting point of 156.7 ° C., but also has excellent characteristics such as low vapor pressure and no brittleness even at low temperatures. Further, the base layers 31a and 31b are made of a material having good wettability and airtightness with respect to the metal sealing material, that is, a material having high affinity with the metal sealing material.

  Next, the second substrate 12 and the first substrate 11 to which the side walls 13 are sealed are arranged to face each other with a predetermined distance therebetween, and in this state, they are put into a vacuum processing apparatus. Here, for example, a vacuum processing apparatus 100 as shown in FIG. 8 is used. The vacuum processing apparatus 100 includes a load chamber 101, a baking chamber 102, a getter film deposition chamber 103, an assembly chamber 104, a cooling chamber 105, and an unload chamber 106 arranged side by side. The baking chamber 102 is constituted by the heating and cooling device described above, and a DC power source 66 for energizing the heating rod and a control unit 68 for controlling the DC power source are connected to the baking chamber. Each chamber of the vacuum processing apparatus 100 is configured as a processing chamber capable of vacuum processing, and all the chambers are evacuated when the FED is manufactured. These processing chambers are connected by a gate valve or the like (not shown).

  The first substrate 11 and the second substrate 12 that are arranged with a predetermined interval between them are first put into the load chamber 101. Then, after the atmosphere in the load chamber 101 is set to a vacuum atmosphere, it is sent to the baking chamber 102. In the baking chamber, when the degree of vacuum reaches about 10-5 Pa, the first substrate 11 and the second substrate 12 are baked by heating to a temperature of 300 ° C. or higher, and the surface adsorbed gas of each member is sufficiently released. Let This baking is performed by the same heating and cooling method as in the above-described embodiment. That is, in the first substrate 11, only one surface on which the phosphor screen 16 is formed is baked by heating with a heating rod, and then the first substrate is cooled using the first substrate itself as a cooling source. Further, the second substrate 12 is baked by heating only the lower surface on which the electron-emitting devices 22 are provided with a heating rod, and then the second substrate is cooled using the second substrate itself as a cooling source. In addition, the method for heating and cooling the substrate is the same as that of the above-described embodiment, and a detailed description thereof is omitted.

  Subsequently, the first substrate 11 and the second substrate 12 are sent to a getter film deposition chamber 103, where a Ba film is deposited on the outside of the phosphor screen as a getter film. The Ba film is prevented from being contaminated with oxygen, carbon, or the like, and can maintain an active state.

Next, the first substrate 11 and the second substrate 12 are sent to the assembly chamber 104 where they are heated to 200 ° C., and the indium layer 32 is melted or softened into a liquid state. In this state, the first substrate 11 and the side wall 13 are joined and pressurized at a predetermined pressure, and then indium is removed and solidified. Thus, the first substrate 11 and the side wall 13 are sealed by the sealing layer 33 in which the indium layer 32 and the base layers 31a and 31b are fused, and the vacuum envelope 10 is formed.
The vacuum envelope 10 thus formed is sent to the cooling chamber 105, cooled to room temperature, and taken out from the unload chamber 106. The FED is completed through the above steps.

  According to the FED manufacturing method and manufacturing apparatus as described above, a getter film having excellent adsorption capability can be obtained by forming a getter film after sufficiently releasing the surface adsorption gas of the substrate by baking in a vacuum atmosphere. Can be obtained. Thereby, a high vacuum degree can be maintained and the display apparatus which can obtain a stable and favorable image can be manufactured. By using indium as the sealing material, an FED having high airtightness and high sealing strength can be obtained without foaming in a vacuum as in the case of sealing with a frit. In addition, after heating and baking one side of the substrate that requires degassing, the substrate is cooled using the substrate itself as a cooling source, so that the substrate can be efficiently heated and cooled in a short time. it can.

  Note that the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying constituent elements without departing from the scope of the invention in the implementation stage. Moreover, various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the embodiment. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, constituent elements over different embodiments may be appropriately combined.

  For example, in the above-described embodiment, the field emission type electron emission element is used as the electron emission element. However, the present invention is not limited to this, and other electron emission such as a pn type cold cathode element or a surface conduction type electron emission element is used. An element may be used. The present invention is also applicable to the manufacture of other image display devices such as a plasma display panel (PDP) and electroluminescence (EL).

Sectional drawing which shows the heating-cooling apparatus which concerns on embodiment of this invention. FIG. 2 is a plan view schematically showing the heating / cooling device. The figure which shows the temperature change of the surface of a board | substrate in the said heating-cooling apparatus, and a back surface. Sectional drawing which each shows the cross-sectional shape of the heating rod in the said heating-cooling apparatus. The perspective view which partially fractures and shows FED manufactured with the heating-cooling method and heating-cooling apparatus which concern on embodiment of this invention. FIG. 6 is a cross-sectional view of the FED along line AA in FIG. 5. The top view which shows the phosphor screen of the said FED. The figure which shows schematically the vacuum processing apparatus used for manufacture of the said FED.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Vacuum envelope, 11 ... 1st board | substrate, 12 ... 2nd board | substrate, 13 ... Side wall,
14 ... support member, 16 ... phosphor screen, 22 ... electron-emitting device,
50 ... Vacuum tank, 54 ... Support mechanism, 56 ... Heating rod, 58 ... Moving mechanism,
60 ... Board, 66 ... DC power supply, 68 ... Control unit

Claims (15)

In the method of heating and cooling the substrate,
Heating the substrate only from one side,
A method for heating and cooling a substrate, wherein the temperature difference between the front and back surfaces of the substrate at each position in the substrate surface is set to 50 ° C to 400 ° C when the temperature of one surface of the substrate becomes maximum.   2. The substrate heating and cooling method according to claim 1, wherein one side of the substrate is heated by a plurality of heating means.   The method for heating and cooling a substrate according to claim 1, wherein one side of the substrate is partially heated.   The method for heating and cooling a substrate according to any one of claims 1 to 3, wherein the substrate is heated in a vacuum atmosphere. In the method of heating and cooling the substrate,
When the substrate is heated only from one side thereof, and the temperature on one side of the substrate is maximized, the temperature difference between the front and back surfaces of the substrate at each position in the substrate surface is set to 50 ° C. to 400 ° C.,
A method for heating and cooling a substrate, comprising: cooling the substrate after heating using at least the substrate itself as a cooling source.   6. The substrate according to claim 1, wherein the substrate is heated by relatively moving the substrate and the heating unit in a state where the one surface of the substrate is opposed to the heating unit. Heating and cooling method.   The substrate is a component of a flat panel display device including a first substrate having a phosphor layer provided on one side and a second substrate having a plurality of electron sources for exciting the phosphor layer provided on one side. The method for heating and cooling a substrate according to claim 1, wherein the substrate is heated and cooled.   The method for heating and cooling a substrate according to claim 1, wherein the substrate has a thickness of 1.2 mm or more. A heating source provided facing one side of the substrate;
The substrate is heated only from one side by the heating source, and when the temperature on one side of the substrate is maximized, the temperature difference between the front and back surfaces of the substrate at each position in the substrate surface is 50 ° C. to 400 ° C. A control unit for controlling the heating source;
A substrate heating / cooling device comprising:   The substrate heating / cooling apparatus according to claim 9, further comprising a moving mechanism that relatively moves the heating source and the substrate.   The substrate heating / cooling device according to claim 9 or 10, wherein the heating source is formed of a material containing at least one of pure metals or alloys of W, Ta, Os, Re, and Mo.   The substrate heating / cooling device according to claim 9, wherein the heating source is formed in a linear shape.   The substrate heating / cooling apparatus according to claim 9, wherein a surface temperature of the heating source is 2000 ° C. or higher.   The substrate heating / cooling device according to claim 9, further comprising a vacuum chamber that houses the substrate and a heating source.   The substrate is a part of a flat panel display device including a first substrate having a phosphor layer provided on one side and a second substrate having a plurality of electron sources for exciting the phosphor layer provided on one side. The heating / cooling device for a substrate according to claim 9.

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