JP2005233700A - Scanning probe microscope equipped with scanning electron microscope - Google Patents

Scanning probe microscope equipped with scanning electron microscope Download PDF

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JP2005233700A
JP2005233700A JP2004040756A JP2004040756A JP2005233700A JP 2005233700 A JP2005233700 A JP 2005233700A JP 2004040756 A JP2004040756 A JP 2004040756A JP 2004040756 A JP2004040756 A JP 2004040756A JP 2005233700 A JP2005233700 A JP 2005233700A
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JP4223971B2 (en
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Susumu Aoki
進 青木
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Jeol Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem wherein a noise is shown on an SEM image and an SPM image owing to vibration of the SEM. <P>SOLUTION: A sample observation device is equipped with a sample observation chamber storing a sample inside and kept in the vacuum state, a scanning probe microscope for detecting a physical quantity acting between a probe and the sample, a charged particle microscope for observing the sample, and the first base having a vibration isolation means installed in the sample observation chamber. The sample observation device is characterized by installing a sample stage for holding the sample, the scanning probe microscope and the charged particle microscope on the first base. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は走査電子顕微鏡を備えた、走査形トンネル顕微鏡、原子間力顕微鏡、磁気力顕微鏡、摩擦力顕微鏡、マイクロ粘弾性顕微鏡、表面電位差顕微鏡、走査形近接場顕微鏡及びその類似装置の総称である走査形プローブ顕微鏡に関するものである。   The present invention is a generic term for a scanning tunnel microscope, an atomic force microscope, a magnetic force microscope, a friction force microscope, a micro-viscoelastic microscope, a surface potential difference microscope, a scanning near-field microscope, and similar devices equipped with a scanning electron microscope. The present invention relates to a scanning probe microscope.

走査形プローブ顕微鏡（以下、ＳＰＭという）は原子レベルの表面形状及び物性を測定することができるが、測定領域が小さい。また、余り凹凸の大きいものの測定は不得意であるが、表面の凹凸が一様でない試料も多い。従って、ＳＰＭにより試料を観察する場合は、あらかじめ試料上の観察したい領域を選定し、ＳＰＭの探針をその領域に正確に位置させることが必要となる。   A scanning probe microscope (hereinafter referred to as SPM) can measure the surface shape and physical properties at the atomic level, but has a small measurement area. In addition, although it is not good at measuring even those with very large irregularities, many samples have uneven surface irregularities. Therefore, when observing a sample by SPM, it is necessary to select a region to be observed on the sample in advance and to accurately position the SPM probe in that region.

そこで、試料上の観察したい領域を選定する際、解像度ではＳＰＭに及ばないが測定領域が広く、試料表面の凹凸の影響を受け難い走査電子顕微鏡（以下、ＳＥＭという）を使用することが有効である。   Therefore, when selecting the region to be observed on the sample, it is effective to use a scanning electron microscope (hereinafter referred to as SEM) that does not reach the SPM in the resolution but has a wide measurement region and is not easily affected by the unevenness of the sample surface. is there.

従来、図５のように、真空を保持した試料観察室に真空フランジを介して走査電子顕微鏡を設置し、別の真空フランジの蓋に固定された第２の基台１８を介して走査形プローブ顕微鏡を設置していた。また、ＳＥＭの視野中心と探針先端との位置合わせを行うためＳＥＭを移動させる必要があるが、ＳＥＭは試料観察室に全体が収納されていないので、真空を保持するためにベローズ６を使用している。ベローズ６は強度的に強くなく、ＳＥＭ像の振動ノイズの原因となっていた。   Conventionally, as shown in FIG. 5, a scanning electron microscope is installed through a vacuum flange in a sample observation chamber holding a vacuum, and a scanning probe is installed through a second base 18 fixed to a lid of another vacuum flange. A microscope was installed. In addition, it is necessary to move the SEM in order to align the center of the field of view of the SEM and the tip of the probe. However, since the entire SEM is not stored in the sample observation chamber, the bellows 6 is used to maintain the vacuum. doing. The bellows 6 is not strong in strength and causes vibration noise of the SEM image.

なお、従来技術としては、真空容器に走査形電子顕微鏡を備えた走査形トンネル顕微鏡（例えば、特許文献１）及び超小型走査電子顕微鏡（例えば、特許文献２）がある。   In addition, as a prior art, there exist a scanning tunnel microscope (for example, patent document 1) provided with the scanning electron microscope in the vacuum vessel, and a microminiature scanning electron microscope (for example, patent document 2).

特開平１０−２７５５８５JP-A-10-275585 特開平８−２２２１６１JP-A-8-222161

しかし、ＳＥＭは直接試料観察室に固定されているが、ＳＰＭ及び試料は除振機構を介して試料観察室に固定されている。このため、ＳＥＭとＳＰＭは別々に振動し、結果としてＳＥＭ像に振動ノイズが載ってしまう。さらに、重量の大きいＳＥＭの振動が試料観察室を介してＳＰＭに悪影響を及ぼすことがあった。   However, although the SEM is directly fixed in the sample observation chamber, the SPM and the sample are fixed in the sample observation chamber via a vibration isolation mechanism. For this reason, SEM and SPM vibrate separately, and as a result, vibration noise appears on the SEM image. Furthermore, the heavy SEM vibration may adversely affect the SPM through the sample observation chamber.

本発明が解決しようとする問題点は、ＳＥＭの振動のためＳＥＭ像及びＳＰＭ像にノイズが載ることがあるという点である。   The problem to be solved by the present invention is that noise may appear on the SEM image and the SPM image due to the vibration of the SEM.

請求項１の発明は、内部に試料を収容し真空に保持された試料観察室と、探針と前記試料との間に作用する物理量を検出する走査形プローブ顕微鏡と、前記試料を観察する荷電粒子顕微鏡と、前記試料観察室内に設置された除振手段を有する第１の基台と、を備えた試料観察装置において、前記試料を保持する試料ステージ、前記走査形プローブ顕微鏡及び前記荷電粒子顕微鏡が第１の前記基台に設置されたことを特徴とした試料観察装置である。   According to the first aspect of the present invention, there is provided a sample observation chamber in which a sample is housed and held in a vacuum, a scanning probe microscope for detecting a physical quantity acting between a probe and the sample, and a charge for observing the sample. In a sample observation apparatus comprising a particle microscope and a first base having a vibration isolation unit installed in the sample observation chamber, a sample stage for holding the sample, the scanning probe microscope, and the charged particle microscope Is a sample observation apparatus characterized in that it is installed on the first base.

請求項２の発明は、前記試料観察室に設置された真空継手と、前記真空継手の蓋と、前記真空継手の蓋に設置された第２の基台と、を備えた請求項１に記載された試料観察装置であって、前記第１の基台が前記第２の基台に設置された試料観察装置である。   The invention of claim 2 comprises the vacuum joint installed in the sample observation chamber, the lid of the vacuum joint, and a second base installed on the lid of the vacuum joint. In the sample observation device, the first base is a sample observation device installed on the second base.

請求項３の発明は、前記走査形プローブ顕微鏡は走査形トンネル顕微鏡又は原子間力顕微鏡である請求項１又は２に記載された試料観察装置である。   A third aspect of the present invention is the sample observation apparatus according to the first or second aspect, wherein the scanning probe microscope is a scanning tunnel microscope or an atomic force microscope.

本発明により、ＳＥＭとＳＰＭを同一の除振機構を備えた基台に載せることができ、ノイズの少ない高分解能のＳＥＭ像及びＳＰＭ像を得ることができた。   According to the present invention, the SEM and SPM can be mounted on a base having the same vibration isolation mechanism, and a high-resolution SEM image and SPM image with less noise can be obtained.

以下、発明を実施するための最良の形態により、本発明を詳細に説明する。   Hereinafter, the present invention will be described in detail according to the best mode for carrying out the invention.

本発明の構成を図を用いて説明する。図１は試料観察室である超高真空チャンバの断面図である。超高真空チャンバ２０は図示しない真空ポンプが接続され、超高真空が保持されている。超高真空チャンバ２０には真空フランジ１９が設置されており、図示しないパッキングを有した蓋で気密が保持されている。蓋には第２の基台１８が設置されており、第２の基台１８上面にはゴムスタック除振機構等の除振機構１７を介して第１の基台１６が設置されている。第１の基台１６上面にはＸＹテーブルから構成される試料ステージ１３が設置されており、試料ステージ１３には試料１１が交換自在に置載されている。   The configuration of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view of an ultra-high vacuum chamber which is a sample observation room. The ultra-high vacuum chamber 20 is connected to a vacuum pump (not shown) and maintains an ultra-high vacuum. A vacuum flange 19 is installed in the ultra-high vacuum chamber 20, and airtightness is maintained by a lid having a packing (not shown). A second base 18 is installed on the lid, and a first base 16 is installed on the upper surface of the second base 18 via a vibration isolation mechanism 17 such as a rubber stack vibration isolation mechanism. A sample stage 13 composed of an XY table is installed on the upper surface of the first base 16, and the sample 11 is placed on the sample stage 13 in a replaceable manner.

また、第１の基台１６上面にはＺ粗動機構１５が設置されている。Ｚ粗動機構１５にはスキャナ１４が設置されている。スキャナ１４はピエゾ素子から構成され、表面には図示しない電極がメタライズされている。スキャナ１４の自由端には探針１２が設置されている。   A Z coarse movement mechanism 15 is installed on the upper surface of the first base 16. A scanner 14 is installed in the Z coarse movement mechanism 15. The scanner 14 is composed of a piezoelectric element, and an electrode (not shown) is metallized on the surface. A probe 12 is installed at the free end of the scanner 14.

さらに、第１の基台１６の上面にはＳＥＭベース２１が設置されており、ＳＥＭベース２１にはＳＥＭ１７が設置されている。ＳＥＭ１７内部にはエミッタ１、ガンレンズ４、アライメント電極３、対物絞り５、スキャン電極８、非点補正電極１０、対物レンズ９等が設置されている。   Further, the SEM base 21 is installed on the upper surface of the first base 16, and the SEM 17 is installed on the SEM base 21. Inside the SEM 17, an emitter 1, a gun lens 4, an alignment electrode 3, an objective aperture 5, a scan electrode 8, an astigmatism correction electrode 10, an objective lens 9, and the like are installed.

以上、図１における各部の構成について説明したが、次に動作について説明する。第１の基台１６は除振機構１７を介して第２の基台１８の上に設置されているため、超高真空チャンバ２０及び超高真空チャンバ２０が設置されている図示しない床からの振動が減衰されている。第１の基台１６にはＳＴＭ２７、ＳＥＭ７及び試料１１が設置されているため振動の影響を受け難いうえ、同一の第１の基台１６上に設置されているためＳＴＭ２７、ＳＥＭ７及び試料１１が別々に振動することがない。   The configuration of each unit in FIG. 1 has been described above. Next, the operation will be described. Since the first base 16 is installed on the second base 18 via the vibration isolation mechanism 17, the ultrahigh vacuum chamber 20 and the floor (not shown) on which the ultrahigh vacuum chamber 20 is installed are installed. Vibration is damped. Since the STM 27, SEM 7 and the sample 11 are installed on the first base 16, they are not easily affected by vibrations, and the STM 27, the SEM 7 and the sample 11 are installed on the same first base 16. It does not vibrate separately.

ＳＥＭ７は以下のように動作する。エミッタ１から放出した電子線はガンレンズ４により収束され、アライメント電極３により軸調整され、対物絞り５を通り、対物レンズ９により、試料１１にフォーカスされる。非点補正電極１０は非点収差を補正して、試料表面ビーム径をより小さくするためのものである。   The SEM 7 operates as follows. The electron beam emitted from the emitter 1 is converged by the gun lens 4, adjusted in axis by the alignment electrode 3, passed through the objective aperture 5, and focused on the sample 11 by the objective lens 9. The astigmatism correction electrode 10 is for correcting astigmatism and making the sample surface beam diameter smaller.

つまり、ＳＥＭ７は、試料１１の表面を微小電子プローブで走査し、表面から放出される二次電子や反射電子を図示しない検出器で受け、その強度をプローブ走査に同期させた図示しないTVモニタ上に輝点列の像として表示する電子顕微鏡である。試料表面の微細な構造や形態が観察でき、凹凸のある試料の広範囲を観察できる。このため、ＳＥＭ７により試料１１の広い範囲を観察し、ＳＴＭ観察を行う領域を選定することができる。選定された試料の領域に、ＸＹテーブルを備えた試料ステージにより、試料を探針位置に移動させる。   That is, the SEM 7 scans the surface of the sample 11 with a micro electron probe, receives secondary electrons and reflected electrons emitted from the surface with a detector (not shown), and synchronizes the intensity with the probe scan on a TV monitor (not shown). FIG. 3 is an electron microscope that displays an image of a bright spot array. The fine structure and form of the sample surface can be observed, and a wide range of the uneven sample can be observed. For this reason, a wide range of the sample 11 can be observed with the SEM 7 and a region for STM observation can be selected. The sample is moved to the probe position on the selected sample area by the sample stage having the XY table.

ＳＥＭ７の視野中心とＳＴＭ２７の探針１２のずれは、鏡筒をあらかじめ精度良くＳＥＭベース２１に固定することを前提に、ＳＥＭ７のスキャン電極８にシフト分の電圧を重畳し、電気的に補正することができる。   The deviation between the center of the field of view of the SEM 7 and the probe 12 of the STM 27 is electrically corrected by superimposing the shift voltage on the scan electrode 8 of the SEM 7 on the assumption that the lens barrel is fixed to the SEM base 21 with high accuracy in advance. be able to.

一方、ＳＴＭ観察では、Ｚ粗動機構１５をＺ方向にスライドさせ、探針１２を試料１１に数ｎｍ程度近づける。微動機構であるスキャナ１４により、試料１１と金属製探針１２との距離をｌｎｍ以下に保ち、これらの間に数Ｖ程度のバイアス電圧をかけると、探針１２と試料１１間の真空間隙を通って電子が移動しトンネル電流が流れるという、いわゆるトンネル効果の原理を利用する。トンネル電流は試料１１と探針１２との距離に敏感であり、距離に対して指数関数的に変化する。そこで、スキャナ１４によりこのトンネル電流が一定となるように探針１２をＺ方向に制御して、試料１１表面上を二次元的に走査する。この時Ｚ方向を制御するために印加した電圧を距離換算したデータに基づいて凹凸情報として画像化することにより、試料１１表面の凹凸を原子レベルで観察することができる。   On the other hand, in STM observation, the Z coarse movement mechanism 15 is slid in the Z direction, and the probe 12 is brought closer to the sample 11 by about several nm. When the distance between the sample 11 and the metal probe 12 is kept at 1 nm or less by the scanner 14 which is a fine movement mechanism and a bias voltage of about several volts is applied between them, the vacuum gap between the probe 12 and the sample 11 is set. The so-called tunnel effect principle is used, in which electrons move through and a tunnel current flows. The tunnel current is sensitive to the distance between the sample 11 and the probe 12, and varies exponentially with respect to the distance. Therefore, the surface of the sample 11 is two-dimensionally scanned by controlling the probe 12 in the Z direction so that the tunnel current becomes constant by the scanner 14. At this time, the unevenness on the surface of the sample 11 can be observed at the atomic level by imaging the unevenness information based on the data obtained by converting the voltage applied to control the Z direction.

以上のように、ＳＥＭ７、ＳＴＭ２７及び試料１１は同じ第１の基台１６の上に載っているので、超高真空チャンバ２０からの振動の影響を受けてＳＥＭ７、ＳＴＭ２７及び試料１１が独立して振動することなく、両方において同時に高分解能の像を得ることができる。   As described above, since the SEM 7, the STM 27, and the sample 11 are mounted on the same first base 16, the SEM 7, the STM 27, and the sample 11 are independently affected by the influence of vibration from the ultrahigh vacuum chamber 20. A high-resolution image can be obtained simultaneously in both without vibration.

また、ＳＥＭ７の分解能は対物レンズ９と試料１１間距離に依存するが、ＳＥＭ７を小型化することにより試料１１に近づけることができるので、より高分解能のＳＥＭ像を得ることができる。   Further, although the resolution of the SEM 7 depends on the distance between the objective lens 9 and the sample 11, since the SEM 7 can be made closer to the sample 11 by downsizing the SEM 7, a higher-resolution SEM image can be obtained.

なお、本発明は、上記実施の形態に限定されるものではなく、種々の変形が可能である。例えば、図２のようにＳＴＭ２７の探針１２先端位置とＳＥＭ７の視野中心を合わせるのに、電気的にではなく、垂直方向移動機構２２及び水平方向移動機構２３を使用して機械的に合わせてもよい。つまり、図２は図１における上面図に相当する図であり、図１のＳＥＭベース２１の替わりに垂直方向移動機構２２及び水平方向移動機構２３を構成し、垂直方向移動機構２２にＳＥＭ７鏡筒を固定している。   In addition, this invention is not limited to the said embodiment, A various deformation | transformation is possible. For example, as shown in FIG. 2, the tip position of the probe 12 of the STM 27 and the visual field center of the SEM 7 are not mechanically aligned but mechanically aligned using the vertical direction moving mechanism 22 and the horizontal direction moving mechanism 23. Also good. That is, FIG. 2 is a view corresponding to the top view in FIG. 1, and the vertical direction moving mechanism 22 and the horizontal direction moving mechanism 23 are configured instead of the SEM base 21 of FIG. Is fixed.

また、ＳＥＭ７は図３のようにガンレンズ４と対物レンズ９に、コンデンサレンズの代わりに磁界型レンズを用いてもよい。   Further, the SEM 7 may use a magnetic lens instead of the condenser lens for the gun lens 4 and the objective lens 9 as shown in FIG.

本発明の構成を図を用いて説明する。図４は第１の基台の上面図である。実施例１との相違点は、ＳＴＭの換わりに原子間力顕微鏡（以下、ＡＦＭという）を用いた点であり、他は同様である。   The configuration of the present invention will be described with reference to the drawings. FIG. 4 is a top view of the first base. The difference from Example 1 is that an atomic force microscope (hereinafter referred to as AFM) is used instead of STM, and the others are the same.

図示しない第２の基台上面にはゴムスタック除振機構等の除振機構を介して第１の基台１６が設置されている。第１の基台１６にはＡＦＭ用ＸＹステージ１３ａが設置されており、ＡＦＭ用ＸＹステージ１３ａには試料スキャナ１４ａが設置されている。試料スキャナ１４ａはピエゾ素子から構成されており、表面には図示しない電極がコーティングされている。試料スキャナ１４ａ上面には試料１１が着脱自在に載置されている。また、第１の基台１６にはＺ粗動機構１５が設置されており、Ｚ粗動機構１５には先端に探針を有するカンチレバ２４、半導体レーザ２５、フォトディテクタ２６が設置されている。   A first base 16 is installed on the upper surface of a second base (not shown) via a vibration isolation mechanism such as a rubber stack vibration isolation mechanism. An AFM XY stage 13a is installed on the first base 16, and a sample scanner 14a is installed on the AFM XY stage 13a. The sample scanner 14a is composed of a piezoelectric element, and an electrode (not shown) is coated on the surface. The sample 11 is detachably mounted on the upper surface of the sample scanner 14a. A Z coarse movement mechanism 15 is installed on the first base 16, and a cantilever 24 having a probe at the tip, a semiconductor laser 25, and a photodetector 26 are installed in the Z coarse movement mechanism 15.

さらに、第１の基台１６にはＳＥＭ７が設置されているが、構成は実施例１と同様である。   Further, the SEM 7 is installed on the first base 16, but the configuration is the same as that of the first embodiment.

以上、図における各部の構成について説明したが、次に動作について説明する。第１の基台１６は除振機構１７を介して図示しない第２の基台の上に設置されているため、図示しない超高真空チャンバ及び超高真空チャンバが設置されている床からの振動が減衰されている。第１の基台１６にはＡＦＭ、ＳＥＭ７及び試料１１が設置されているため振動の影響を受け難いうえ、同一の第１の基台１６上に設置されているためＡＦＭ、ＳＥＭ及び試料１１が別々に振動することがない。   The configuration of each unit in the figure has been described above. Next, the operation will be described. Since the first base 16 is installed on the second base (not shown) via the vibration isolation mechanism 17, vibrations from the ultra high vacuum chamber (not shown) and the floor on which the ultra high vacuum chamber is installed are shown. Is attenuated. Since the AFM, SEM 7 and the sample 11 are installed on the first base 16, the AFM, SEM and the sample 11 are not easily affected by vibrations and are installed on the same first base 16. It does not vibrate separately.

ＳＥＭ７の動作は、実施例１と同様である。   The operation of the SEM 7 is the same as that in the first embodiment.

一方、ＡＦＭ観察では、第１の基台１６に設置されたＺ粗動機構１５がスライドして、カンチレバ２４の先端に設置された探針を試料１１に数ｎｍ以下に近づける。微動機構である試料スキャナ１４ａにより試料１１と探針との距離をｌｎｍ以下に保ち、試料１１を試料スキャナ１４ａで走査させながら、カンチレバ２４のたわみ量を半導体レーザ２５とフォトディテクタ２６により検出して画像化することにより、試料１１表面を原子レベルで観察することが可能である。   On the other hand, in the AFM observation, the Z coarse movement mechanism 15 installed on the first base 16 slides to bring the probe installed at the tip of the cantilever 24 closer to the sample 11 to several nm or less. The distance between the sample 11 and the probe is kept at 1 nm or less by the sample scanner 14a which is a fine movement mechanism, and the amount of deflection of the cantilever 24 is detected by the semiconductor laser 25 and the photodetector 26 while the sample 11 is scanned by the sample scanner 14a. Therefore, the surface of the sample 11 can be observed at the atomic level.

カンチレバ２４の先端位置とＳＥＭ７の視野中心のずれは、垂直方向移動機構２２及び水平方向移動機構２３を使用して機械的に合わせる。垂直方向移動機構２２及び水平方向移動機構２３の方式としては小型化し易い慣性駆動方式等を利用する。   The deviation between the tip position of the cantilever 24 and the center of the visual field of the SEM 7 is mechanically adjusted using the vertical direction moving mechanism 22 and the horizontal direction moving mechanism 23. As a method of the vertical direction moving mechanism 22 and the horizontal direction moving mechanism 23, an inertial drive method or the like that is easy to miniaturize is used.

以上により、ＳＥＭ７、ＡＦＭ及び試料は同じ第１の基台１６の上に載っているので、超高真空チャンバ２０の振動の影響を受けることなく両方とも高分解能を得ることができる。   As described above, since the SEM 7, the AFM, and the sample are mounted on the same first base 16, both can obtain high resolution without being affected by the vibration of the ultra-high vacuum chamber 20.

本発明の実施例１における走査形トンネル顕微鏡を備えた超高真空チャンバの側面断面図である。It is side surface sectional drawing of the ultrahigh vacuum chamber provided with the scanning tunnel microscope in Example 1 of this invention. 本発明の実施例１における他実施例の第１の基台の平面図である。It is a top view of the 1st base of other examples in Example 1 of the present invention. 本発明の実施例１における他実施例の第１の基台の平面図である。It is a top view of the 1st base of other examples in Example 1 of the present invention. 本発明の実施例２における原子間力顕微鏡を備えた第１の基台の平面図である。It is a top view of the 1st base provided with the atomic force microscope in Example 2 of the present invention. 従来技術における走査形トンネル顕微鏡を備えた超高真空チャンバの側面断面図である。It is side surface sectional drawing of the ultrahigh vacuum chamber provided with the scanning tunnel microscope in a prior art.

符号の説明Explanation of symbols

１ エミッタ
２ 引出電極
３ アライメント電極
３ａ ガンアライメントコイル
４ ガンレンズ
５ 対物絞り
６ ベローズ
７ ＳＥＭ
８ スキャン電極
９ 対物レンズ
１０ 非点補正電極
１１ 試料
１２ 探針
１３ 試料ステージ
１３ａ ＡＦＭ用ＸＹステージ
１４ スキャナ
１４ａ 試料スキャナ
１５ Ｚ粗動機構
１６ 第１の基台
１７ ゴムスタック除振機構
１８ 第２の基台
１９ 真空フランジ
２０ 超高真空チャンバ
２１ ＳＥＭベース
２２ 垂直方向移動機構
２３ 水平方向移動機構
２４ カンチレバ
２５ 半導体レーザ
２６ フォトディテクタ
２７ ＳＴＭ DESCRIPTION OF SYMBOLS 1 Emitter 2 Extraction electrode 3 Alignment electrode 3a Gun alignment coil 4 Gun lens 5 Objective aperture 6 Bellows 7 SEM
8 Scan electrode 9 Objective lens 10 Astigmatism correction electrode 11 Sample 12 Probe 13 Sample stage 13a XY stage for AFM 14 Scanner 14a Sample scanner 15 Z coarse motion mechanism 16 First base 17 Rubber stack vibration isolation mechanism 18 Second Base 19 Vacuum flange 20 Ultra high vacuum chamber 21 SEM base 22 Vertical movement mechanism 23 Horizontal movement mechanism 24 Cantilever 25 Semiconductor laser 26 Photo detector 27 STM

Claims (3)

内部に試料を収容し真空に保持された試料観察室と、
探針と前記試料との間に作用する物理量を検出する走査形プローブ顕微鏡と、
前記試料を観察する荷電粒子顕微鏡と、
前記試料観察室内に設置された除振手段を有する第１の基台と、を備えた試料観察装置において、
前記試料を保持する試料ステージ、前記走査形プローブ顕微鏡及び前記荷電粒子顕微鏡が第１の前記基台に設置されたことを特徴とした試料観察装置。 A sample observation chamber in which a sample is stored and held in a vacuum,
A scanning probe microscope for detecting a physical quantity acting between the probe and the sample;
A charged particle microscope for observing the sample;
A sample observation apparatus comprising: a first base having vibration isolation means installed in the sample observation chamber;
A sample observation apparatus, wherein a sample stage for holding the sample, the scanning probe microscope, and the charged particle microscope are installed on the first base. 前記試料観察室に設置された真空継手と、
前記真空継手の蓋と、
前記真空継手の蓋に設置された第２の基台と、を備えた請求項１に記載された試料観察装置であって、
前記第１の基台が前記第２の基台に設置された試料観察装置。 A vacuum joint installed in the sample observation chamber;
A lid of the vacuum joint;
A sample observation device according to claim 1, comprising a second base installed on the lid of the vacuum joint,
A sample observation apparatus in which the first base is installed on the second base. 前記走査形プローブ顕微鏡は走査形トンネル顕微鏡又は原子間力顕微鏡である請求項１又は２に記載された試料観察装置。   The sample observation apparatus according to claim 1, wherein the scanning probe microscope is a scanning tunnel microscope or an atomic force microscope.
JP2004040756A 2004-02-18 2004-02-18 Scanning probe microscope with scanning electron microscope Expired - Fee Related JP4223971B2 (en)

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JP2016530499A (en) * 2013-06-24 2016-09-29 ディーシージー システムズ、 インコーポレイテッドDcg Systems Inc. Probing-based data acquisition system with an adaptive mode of probing controlled by local sample characteristics
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JP2007232387A (en) * 2006-02-27 2007-09-13 Hitachi High-Technologies Corp Inspection device and method
KR20080060000A (en) * 2006-12-26 2008-07-01 삼성전자주식회사 Apparatus for inspecting sample using a scanning electronic microscope
JP2011228311A (en) * 2011-06-21 2011-11-10 Hitachi High-Technologies Corp Inspection device and inspection method
JP2016530499A (en) * 2013-06-24 2016-09-29 ディーシージー システムズ、 インコーポレイテッドDcg Systems Inc. Probing-based data acquisition system with an adaptive mode of probing controlled by local sample characteristics
US9891280B2 (en) 2013-06-24 2018-02-13 Fei Efa, Inc. Probe-based data collection system with adaptive mode of probing controlled by local sample properties
US10539589B2 (en) 2014-06-25 2020-01-21 Fei Efa, Inc. Through process flow intra-chip and inter-chip electrical analysis and process control using in-line nanoprobing
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CN105928812A (en) * 2016-07-05 2016-09-07 北京工业大学 In-situ high-temperature indentation test system based on scanning electron microscope

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