JP2005222988A - Method for dividing wafer - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To establish a process for forming a deterioration layer in a wafer along a predetermined division line, using a pulse laser beam, dividing the wafer into individual chips along the deteriorated layer and picking up the divided chips. <P>SOLUTION: The method for dividing a wafer, arranged with a functional element in a region sectioned by predetermined division lines, along the predetermined division lines comprises a step for sticking the wafer to a dicing tape, a step of polishing the rear surface of the wafer, a step for forming a deteriorated layer in the wafer along the predetermined division line by irradiating the wafer with a pulse laser beam transmitting the wafer from the rear surface side along the predetermined division line, a step of dividing the wafer into individual chips along the predetermined division line by imparting an external force, a step of enlarging the interval between the chips by spreading the dicing tape, and a step of picking up each chip. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a wafer in which a functional element is arranged in a region partitioned by a predetermined division line formed in a lattice pattern on the surface, and the wafer is divided along the predetermined division line to pick up the divided individual chips. It is related to the division method.

  In the semiconductor device manufacturing process, a plurality of regions are partitioned by dividing lines called streets arranged in a lattice pattern on the surface of a substantially disc-shaped semiconductor wafer, and circuits such as ICs, LSIs, etc. are partitioned in these partitioned regions. (Functional element) is formed. Then, by cutting the semiconductor wafer along the planned dividing line, the region where the circuit is formed is divided to manufacture individual semiconductor chips. In addition, an optical device wafer in which a light receiving element (functional element) such as a photodiode or a light emitting element (functional element) such as a laser diode is laminated on the surface of a sapphire substrate is cut along individual lines by dividing each photo. Divided into optical devices such as diodes and laser diodes, they are widely used in electrical equipment.

  The cutting along the division lines such as the above-described semiconductor wafer and optical device wafer is usually performed by a cutting device called a dicer. This cutting apparatus includes a chuck table for holding a workpiece such as a semiconductor wafer or an optical device wafer, a cutting means for cutting the workpiece held on the chuck table, and a chuck table and the cutting means. And a cutting feed means for moving it. The cutting means includes a spindle unit having a rotary spindle, a cutting blade mounted on the spindle, and a drive mechanism for driving the rotary spindle to rotate. The cutting blade is composed of a disk-shaped base and an annular cutting edge mounted on the outer periphery of the side surface of the base. The cutting edge is fixed to the base by electroforming, for example, diamond abrasive grains having a particle size of about 3 μm. It is formed to a thickness of about 20 μm.

  However, since the cutting blade has a thickness of about 20 μm, the dividing line that divides the chip needs to have a width of about 50 μm, and the area ratio of the dividing line to the area of the wafer is large, resulting in poor productivity. There is. Moreover, since the sapphire substrate, the silicon carbide substrate, and the like have high Mohs hardness, cutting with the cutting blade is not always easy.

On the other hand, in recent years, as a method for dividing a plate-like workpiece such as a semiconductor wafer, a pulse laser beam that uses a pulsed laser beam that is transparent to the workpiece and aligns the condensing point inside the region to be divided is used. A laser processing method for irradiating the film has also been attempted. The dividing method using this laser processing method irradiates a pulsed laser beam in an infrared region having transparency to the work piece by aligning a condensing point from one side of the work piece to the inside. The workpiece is divided by continuously forming a deteriorated layer along the planned division line inside the workpiece and applying external force along the planned division line whose strength has been reduced by the formation of this modified layer. To do. (For example, refer to Patent Document 1.)
Japanese Patent No. 3408805

  Thus, although a process for picking up the chips by cutting the wafer completely by cutting the wafer with the above-described cutting apparatus has been established, a pulse laser beam is used along the planned division line inside the wafer. Since the technology for forming an altered layer cannot completely divide the wafer, the production line has not been established and is in a trial and error state.

  The present invention has been made in view of the above-mentioned facts, and the main technical problem thereof is that a deteriorated layer is formed along the line to be divided inside the wafer by using a pulsed laser beam, and an individual layer is formed along this deteriorated layer. To provide a wafer dividing method capable of establishing a process of picking up divided chips while dividing the chips.

In order to solve the above-mentioned main technical problem, according to the present invention, a wafer in which functional elements are arranged in a region partitioned by division lines formed in a lattice pattern on the surface is divided along the division lines. A method of dividing a wafer,
A frame holding step of attaching the wafer surface to a dicing tape attached to an annular frame;
A polishing step for polishing the back surface of the wafer whose surface is attached to a dicing tape mounted on a frame;
A deteriorated layer forming step of irradiating a pulsed laser beam having transparency to the wafer from the back side of the polished wafer along the planned dividing line, and forming a modified layer along the planned dividing line inside the wafer;
A dividing step of applying an external force along the planned dividing line on which the altered layer of the wafer held by the frame is formed, and dividing the wafer into individual chips along the planned dividing line;
An expansion process for expanding the dicing tape to which the wafer divided into individual chips is attached and expanding the distance between the chips;
Picking up each chip from the expanded dicing tape, and
A method of dividing a wafer is provided.

It is desirable that the deteriorated layer formed inside the wafer in the deteriorated layer forming step is formed to be exposed at least on the surface of the wafer.
The dividing step is preferably performed by expanding a dicing tape in the tensioning step.

  Since the wafer dividing method according to the present invention comprises the above steps, a pulsed laser beam having transparency to a wafer in which functional elements are disposed in regions partitioned by scheduled dividing lines formed in a lattice pattern on the surface. The process of forming a deteriorated layer along the planned split line inside the wafer by dividing the chip along the planned split line, dividing the chip into individual chips along the damaged layer, and picking up the split chips. Can be established.

  Preferred embodiments of a wafer dividing method according to the present invention will be described below in detail with reference to the accompanying drawings.

  FIG. 1 shows a perspective view of a semiconductor wafer as a wafer to be processed according to the present invention. A semiconductor wafer 2 shown in FIG. 1 is made of a silicon wafer, and a plurality of division lines 21 are formed in a lattice shape on the surface 2a, and in a plurality of regions partitioned by the plurality of division lines 21. A circuit 22 as a functional element is formed.

  The semiconductor wafer 2 configured in this manner performs a frame holding process in which the surface 2a is adhered to a dicing tape mounted on an annular frame. In the frame holding step, the surface 2a of the semiconductor wafer 2 is adhered to the surface of the expandable dicing tape 30 mounted on the annular frame 3 as shown in FIG. In the illustrated embodiment, the dicing tape 30 has an acrylic resin paste applied to the surface of a sheet base material made of polyvinyl chloride (PVC) having a thickness of 100 μm to a thickness of about 5 μm. This paste has a property that the adhesive strength is reduced by an external stimulus such as ultraviolet rays.

  If the surface 2a of the semiconductor wafer 2 is attached to the dicing tape 30 mounted on the annular frame 3 by performing the frame holding step, the back surface 2b of the semiconductor wafer 2 is ground to a predetermined thickness. Carry out the grinding process. A polishing step is performed in which the back surface 2b of the semiconductor wafer 2 is polished into a mirror surface. This polishing step is performed in order to prevent the infrared laser beam irradiated from the back surface 2b side of the semiconductor wafer 2 from being irregularly reflected. That is, in a wafer formed of silicon or the like, when an infrared laser beam is irradiated with a condensing point inside, if the surface roughness of the surface on which the infrared laser beam is irradiated is rough, it is irregularly reflected on the surface and is predetermined. This is because the laser beam does not reach the condensing point, and it is difficult to form a predetermined deteriorated layer inside. This polishing step is performed by a polishing apparatus in the embodiment shown in FIG. That is, in the polishing process, first, the dicing tape 30 side of the semiconductor wafer 2 is placed on the chuck table 41 of the polishing apparatus 4 as shown in FIG. 3 (therefore, the back surface 2b of the semiconductor wafer 2 is on the upper side). The semiconductor wafer 2 is sucked and held on the chuck table 41 by the suction means that does not. In FIG. 3, the annular frame 3 on which the dicing tape 30 is mounted is omitted, but the annular frame 3 is held by an appropriate clamping mechanism disposed on the chuck table 41. If the semiconductor wafer 2 is held on the chuck table 41 in this way, abrasive grains such as zirconia oxide are dispersed in a flexible member such as felt while rotating the chuck table 41 at 300 rpm, for example, with an appropriate bond agent. The back surface 2b of the semiconductor wafer 2 is mirror-finished by rotating the polishing tool 43 provided with the fixed polishing grindstone 42 at, for example, 6000 rpm and contacting the back surface 2b of the semiconductor wafer 2. In this mirror surface processing step, the back surface 2b of the semiconductor wafer 2, which is a processed surface, has a surface roughness (Ra) specified by JIS B0601 of 0.05 μm or less (Ra ≦ 0.05 μm), preferably 0.02 μm or less (Ra ≦ 0.02 μm).

  Next, a pulsed laser beam having transparency to the wafer is irradiated along the planned dividing line from the back surface 2b side of the mirror-finished semiconductor wafer 2 to form a deteriorated layer along the planned dividing line inside the wafer. An altered layer forming step is performed. This deteriorated layer forming step is performed using a laser processing apparatus 5 shown in FIGS. A laser processing apparatus 5 shown in FIGS. 4 to 6 includes a chuck table 51 that holds a workpiece, laser beam irradiation means 52 that irradiates the workpiece held on the chuck table 51 with a laser beam, and a chuck table 51. An image pickup means 53 for picking up an image of the workpiece held thereon is provided. The chuck table 51 is configured to suck and hold a workpiece, and can be moved in a machining feed direction indicated by an arrow X and an index feed direction indicated by an arrow Y in FIG. Yes.

  The laser beam irradiation means 52 includes a cylindrical casing 521 disposed substantially horizontally. In the casing 521, as shown in FIG. 5, a pulse laser beam oscillation means 522 and a transmission optical system 523 are arranged. The pulse laser beam oscillation means 522 is composed of a pulse laser beam oscillator 522a composed of a YAG laser oscillator or a YVO4 laser oscillator, and a repetition frequency setting means 522b attached thereto. The transmission optical system 523 includes an appropriate optical element such as a beam splitter. A condenser 524 containing a condenser lens (not shown) composed of a combination lens that may be in a known form is attached to the tip of the casing 521. The laser beam oscillated from the pulse laser beam oscillating means 522 reaches the condenser 524 through the transmission optical system 523, and a predetermined focused spot diameter is applied to the workpiece held on the chuck table 51 from the condenser 524. Irradiated with D. As shown in FIG. 6, the focused spot diameter D is D (μm) = 4 × λ × f / (π when a pulse laser beam having a Gaussian distribution is irradiated through the objective condenser lens 524 a of the condenser 524. × W), where λ is defined by the wavelength (μm) of the pulsed laser beam, W is the diameter (mm) of the pulsed laser beam incident on the objective lens 524a, and f is the focal length (mm) of the objective lens 524a.

  In the illustrated embodiment, the image pickup means 53 mounted on the tip of the casing 521 constituting the laser beam irradiation means 52 emits infrared rays to the workpiece in addition to a normal image pickup device (CCD) that picks up an image with visible light. Infrared illumination means for irradiating, an optical system for capturing infrared light emitted by the infrared illumination means, an image pickup device (infrared CCD) for outputting an electrical signal corresponding to the infrared light captured by the optical system, and the like Then, the captured image signal is sent to the control means described later.

The deteriorated layer forming step performed using the laser processing apparatus 5 described above will be described with reference to FIGS. 4, 7, and 8.
In this deteriorated layer forming process, first, the dicing tape 30 side of the semiconductor wafer 2 whose back surface 2b is polished is placed on the chuck table 51 of the laser processing apparatus 5 shown in FIG. The semiconductor wafer 2 is sucked and held on the chuck table 51 by suction means (not shown). 4, 7, and 8, the annular frame 3 to which the dicing tape 30 is attached is omitted, but the annular frame 3 is attached to an appropriate clamping mechanism disposed on the chuck table 51. Is retained. The chuck table 51 that sucks and holds the semiconductor wafer 2 in this way is positioned directly below the imaging means 53 by a moving mechanism (not shown).

  When the chuck table 51 is positioned immediately below the image pickup means 53, an alignment operation for detecting a processing region to be laser processed of the semiconductor wafer 2 is executed by the image pickup means 53 and a control means (not shown). That is, the image pickup means 53 and the control means (not shown) include the division line 21 formed in a predetermined direction of the semiconductor wafer 2, and the condenser 524 of the laser beam irradiation means 52 that irradiates the laser beam along the division line 21. Image processing such as pattern matching is performed to align the laser beam, and alignment of the laser beam irradiation position is performed. In addition, alignment of the laser beam irradiation position is similarly performed on the division line 21 formed on the semiconductor wafer 2 and extending at right angles to the predetermined direction. At this time, the surface 2a on which the division line 21 of the semiconductor wafer 2 is formed is located on the lower side, but the imaging unit 53 corresponds to the infrared illumination unit, the optical system for capturing infrared rays and the infrared ray as described above. Since the image pickup device is provided with an image pickup device (infrared CCD) or the like that outputs an electric signal, the division planned line 21 can be picked up through the back surface 2b.

  If the division planned line 21 formed on the semiconductor wafer 2 held on the chuck table 51 is detected as described above and the laser beam irradiation position is aligned, it is shown in FIG. In this way, the chuck table 51 is moved to the laser beam irradiation region where the condenser 524 of the laser beam irradiation means 52 for irradiating the laser beam is located, and one end (the left end in FIG. 7A) of the predetermined division line 21 is irradiated with the laser beam. Positioned just below the light collector 524 of the means 52. The chuck table 51, that is, the semiconductor wafer 2, is moved at a predetermined feed speed in the direction indicated by the arrow X1 in FIG. Then, as shown in FIG. 7B, when the irradiation position of the condenser 524 of the laser beam irradiation means 52 reaches the position of the other end of the division planned line 21, the irradiation of the pulse laser beam is stopped and the chuck table 51, The movement of the semiconductor wafer 2 is stopped. In this deteriorated layer forming step, the condensing point P of the pulse laser beam is matched with the vicinity of the surface 2a (lower surface) of the semiconductor wafer 2, so that the deteriorated layer 210 is exposed to the surface 2a (lower surface) and from the surface 2a toward the inside. Is formed. This altered layer 210 is formed as a melt-resolidified layer. By forming the altered layer 210 so as to be exposed on the surface 2 a of the semiconductor wafer 2, division by applying an external force along the altered layer 210 is facilitated.

Note that the processing conditions in the deteriorated layer forming step are set as follows, for example.
Light source: LD excitation Q switch Nd: YVO4 laser wavelength: 1064 nm pulse laser Pulse output: 10 μJ
Condensing spot diameter: φ1μm
Pulse width; 40 ns
Peak power density at condensing point; 3.2 × 10 ¹⁰ W / cm ²
Repetition frequency: 100 kHz
Processing feed rate: 100 mm / sec

  When the thickness of the semiconductor wafer 2 is thick, the plurality of deteriorated layers 210 are formed by changing the condensing point P stepwise as shown in FIG. Form. Note that, since the thickness of the deteriorated layer formed at one time is about 50 μm under the above-described processing conditions, in the illustrated embodiment, six deteriorated layers are formed on the wafer 2 having a thickness of 300 μm. . As a result, the altered layer 210 formed inside the semiconductor wafer 2 is formed from the front surface 2a to the back surface 2b along the planned dividing line 21.

If the deteriorated layer 210 is formed along the planned division line 21 inside the semiconductor wafer 2 by the above-described deteriorated layer forming step, a division process for dividing the semiconductor wafer 2 along the planned division line 21 is performed.
A first embodiment of the dividing step will be described with reference to FIG. The first embodiment of the dividing step shown in FIG. 9 is performed using the ultrasonic dividing device 6. The ultrasonic splitting device 6 includes a cylindrical base 61, a first ultrasonic oscillator 62, and a second ultrasonic oscillator 63. A cylindrical base 61 constituting the ultrasonic dividing device 6 includes a mounting surface 61a on which the frame 3 is mounted on an upper surface, and the frame 3 is mounted on the mounting surface 61a and fixed by a clamp 64. To do. The base 61 is configured to be movable in a horizontal direction and a direction perpendicular to the paper surface in FIG. The first ultrasonic oscillator 62 and the second ultrasonic oscillator 63 constituting the ultrasonic dividing device 6 are arranged on the frame 3 placed on the placement surface 61 a of the cylindrical base 61 via the dicing tape 30. The upper and lower sides of the supported semiconductor wafer 2 are opposed to each other, and a longitudinal wave (dense / dense wave) having a predetermined frequency is generated. In order to carry out the dividing step using the ultrasonic dividing apparatus 6 configured as described above, the semiconductor wafer 2 (the altered layer 210 is formed along the planned dividing line 21) is passed through the dicing tape 30. The supported frame 3 is mounted on the mounting surface 61a of the cylindrical base 61 on the side on which the dicing tape 30 is mounted (therefore, the back surface 2b of the semiconductor wafer 2 is on the upper side) and fixed by the clamp 64. . Next, the base 61 is operated by a moving means (not shown), and one end (the left end in FIG. 9) of the predetermined division line 21 formed on the semiconductor wafer 2 is connected to the first ultrasonic oscillator 62 and the second ultrasonic oscillator. It is positioned at the position where the ultrasonic wave from 63 acts. Then, the first ultrasonic oscillator 62 and the second ultrasonic oscillator 63 are operated to generate a longitudinal wave (dense wave) having a frequency of, for example, 28 kHz, and the base 61 is set in a direction indicated by an arrow, for example, 50 to 100 mm / Move at a feed rate of seconds. As a result, since the ultrasonic waves generated from the first ultrasonic oscillator 62 and the second ultrasonic oscillator 63 act on the front and back surfaces along the division line 21 of the semiconductor wafer 2, the semiconductor wafer 2 is deteriorated. 210 is formed and divided along the planned dividing line 21 whose strength has been lowered. When the dividing process is performed along the predetermined division line 21 in this way, the base 71 is indexed and fed in the direction perpendicular to the paper surface by an amount corresponding to the interval between the dividing lines 21 and the above dividing process is performed. To do. When the dividing process is performed along all the dividing lines 21 extending in the predetermined direction in this way, the base 61 is rotated by 90 degrees, and the dividing schedule formed in the direction perpendicular to the predetermined direction on the semiconductor wafer 2 is performed. By performing the above dividing step on the line 21, the semiconductor wafer 2 is divided into individual chips. In addition, since the back surface of the chip | tip divided | segmented separately is affixed on the dicing tape 30, it does not fall apart but the form of a wafer is maintained.

  Next, a second embodiment of the dividing step will be described with reference to FIG. The second embodiment of the dividing step shown in FIG. 10 is performed using a laser processing apparatus 7 similar to the laser processing apparatus shown in FIGS. That is, as shown in FIG. 10, the semiconductor wafer 2 (the altered layer 210 is formed along the division line 21) supported on the frame 3 via the dicing tape 30 is placed on the chuck table 71 of the laser processing apparatus 7. The dicing tape 30 side is placed (therefore, the back surface 2b of the semiconductor wafer 2 is on the upper side), and is sucked and held by suction means (not shown), and the frame 3 is fixed by the clamp mechanism 72. Next, the chuck table 71 is moved to the laser beam irradiation region where the condenser 73 of the laser beam application means is located, and one end (the left end in FIG. 10) of the predetermined division line 21 is positioned immediately below the condenser 73. Then, while irradiating the semiconductor wafer 2 with a continuous wave laser beam having an absorptivity from the condenser 73, the chuck table 71, that is, the semiconductor wafer 2 is moved in a direction indicated by an arrow X1 in FIG. When the other end (right end in FIG. 10) of the predetermined division line 21 reaches the irradiation position of the condenser 73, the irradiation of the laser beam is stopped and the movement of the chuck table 71, that is, the semiconductor wafer 2 is stopped. In this division step, the condensing point P of the continuous wave laser beam is aligned with the back surface 2b (upper surface) of the semiconductor wafer 2, and the division line 21 on which the altered layer 210 is formed is heated to generate thermal stress, Give a shock. As a result, the semiconductor wafer 2 is divided by being divided along the planned dividing line 21 where the altered layer 210 is formed. In addition, the laser beam irradiated along the planned dividing line 21 in which the altered layer 210 is formed in the dividing step is sufficient for the output to heat the semiconductor wafer 2 to give an appropriate temperature gradient (100 to 400 ° C.). Yes, it does not melt silicon.

In addition, the processing conditions in the said division | segmentation process are set as follows, for example.
Light source: LD pumped Nd: YAG second harmonic laser (CW)
Wavelength: 532 nm
Output: 10W
Condensing spot diameter: φ0.5 mm (heats a relatively wide area including the altered layer 110)
Processing feed rate: 100 mm / sec

  When the division process is performed as described above, the chuck table 71, that is, the semiconductor wafer 2 is indexed and fed in the direction perpendicular to the paper surface in FIG. 10 by the interval of the division line 21 and the continuous wave laser beam is irradiated again as described above. While performing the process feed. When the processing feed and the index feed are performed along all the planned division lines 21 formed in the predetermined direction, the chuck table 71, that is, the semiconductor wafer 2 is rotated by 90 degrees to make the predetermined direction. By performing the processing feed and the index feed along the planned division line 21 formed at right angles, the cutting and division are performed along the planned division line 21 formed on the semiconductor wafer 2. The semiconductor wafer 2 is divided into individual chips by being cleaved along the division line 21. However, since the back surface 2b of the semiconductor wafer 2 is adhered to the dicing tape 30, the semiconductor wafer 2 does not fall apart. The shape of the wafer is maintained.

  Next, a third embodiment of the dividing step will be described with reference to FIG. The third embodiment of the dividing step shown in FIG. 11 is performed using a bending dividing device 8 including a cylindrical base 81 and a bending load applying means 83. That is, the frame 3 supporting the semiconductor wafer 2 (the altered layer 210 is formed along the planned dividing line 21) via the dicing tape 30 is placed on the mounting surface 81a of the cylindrical base 81 on the dicing tape 30 side. The semiconductor wafer 2 is fixed by a clamp 82 (therefore, the back surface 2b of the semiconductor wafer 2 is on the lower side). Then, the back surface 2 b (bottom surface) of the semiconductor wafer 2 is placed on a plurality of columnar support members 84 arranged in parallel to each other that constitute the bending load applying means 83. At this time, the semiconductor wafer 2 is placed so that the planned division line 21 formed in the predetermined direction of the semiconductor wafer 2 is positioned between the support members 84 and 84. And it presses along the division line 21 with the pressing member 85 from the dicing tape 30 side stuck to the surface 2a of the semiconductor wafer 2. FIG. As a result, a bending load acts on the semiconductor wafer 2 along the planned division line 21 to generate a tensile stress on the back surface 2b, and the semiconductor wafer 2 is formed along the planned division line 21 where the deteriorated layer 210 is formed and the strength is reduced. Cleaved and divided. Then, after dividing along the altered layer 210 formed in a predetermined direction, that is, along the planned dividing line 21, the cylindrical base 81, that is, the semiconductor wafer 2 is rotated 90 degrees to form a right angle with respect to the predetermined direction. The semiconductor wafer 2 can be divided into individual chips by performing the above dividing operation along the planned dividing line 21. In addition, since the surface of the chip | tip divided | segmented separately is affixed on the dicing tape 30, it does not fall apart but the form of the semiconductor wafer 2 is maintained.

  Next, a fourth embodiment of the dividing step will be described with reference to FIG. The fourth embodiment of the dividing step shown in FIG. 12 is carried out using a bending dividing device 9 comprising a cylindrical base 91 and a pressing member 93 as a bending load applying means. The base 91 is configured to be movable in the left-right direction and the direction perpendicular to the paper surface in FIG. The frame 3 that supports the semiconductor wafer 2 (the altered layer 210 is formed along the planned division line 21) via the dicing tape 30 on the mounting surface 91 a of the cylindrical base 91 configured in this way. The dicing tape 30 side is placed (therefore, the back surface 2b of the semiconductor wafer 2 is on the upper side) and fixed by a clamp 92. Next, the base 91 is actuated by a moving means (not shown), and one end (left end in FIG. 12) of a predetermined division line 21 formed on the semiconductor wafer 2 is positioned at a position facing the pressing member 93 and the pressing member 93. 12 is moved upward in FIG. 12 and positioned at a position where the dicing tape 30 to which the semiconductor wafer 2 is adhered is pressed. Then, the base 91 is moved in the direction indicated by the arrow. As a result, a bending load acts on the semiconductor wafer 2 along the planned dividing line 21 pressed by the pressing member 93 to generate a tensile stress on the back surface 2b. It is divided along the planned division line 21 and divided. When the dividing process is performed along the predetermined dividing line 21 in this way, the base 91 is indexed and fed in the direction perpendicular to the paper surface by an amount corresponding to the interval between the dividing lines 21 and the dividing process is performed. To do. When the dividing process is performed along all the dividing lines 21 extending in the predetermined direction in this way, the base 91 is rotated by 90 degrees, and the dividing schedule formed on the semiconductor wafer 2 in a direction perpendicular to the predetermined direction. By performing the above dividing step on the line 21, the semiconductor wafer 2 is divided into individual chips. In addition, since the surface of the chip | tip divided | segmented separately is affixed on the dicing tape 30, it does not fall apart but the form of a wafer is maintained.

  In addition, in the dividing process of dividing the semiconductor wafer 2 along the planned dividing line 21, the semiconductor wafer 2 attached to, for example, a dicing tape is placed on a flexible rubber sheet in addition to the dividing method described above. By pressing the upper surface with a roller, it is possible to use a method of cleaving the semiconductor wafer 2 along the planned dividing line 21 in which the deteriorated layer 210 is formed and the strength is reduced.

  If the division | segmentation process mentioned above was implemented, the expansion process which expands the space | interval between each chip | tip by expanding the dicing tape with which the wafer divided | segmented into each chip | tip was stuck will be implemented. This expansion process is performed by the pickup device 11 shown in FIGS. Here, the pickup device 11 will be described. The pick-up device 11 shown in the figure includes a cylindrical base 111 on which a mounting surface 111 a for mounting the frame 3 is formed, and a dicing tape 30 that is concentrically disposed in the base 111 and mounted on the frame 3. The expansion means 112 for expanding is provided. The expansion means 112 includes a cylindrical expansion member 113 that supports the region 301 where the semiconductor wafer 2 is present in the dicing tape 30. The expansion member 113 is moved vertically between the reference position shown in FIG. 14 (a) and the extended position shown in FIG. 14 (b) above the reference position by lifting means (not shown). It is configured to be movable in the axial direction. In the illustrated embodiment, an ultraviolet irradiation lamp 114 is disposed in the expansion member 123.

The expansion process performed using the pickup device 11 described above will be described with reference to FIGS.
As described above, the frame 3 on which the dicing tape 30 to which the surface 2a of the semiconductor wafer 2 divided into individual chips 20 is attached has a cylindrical base as shown in FIG. 13 and FIG. 111 is mounted on the mounting surface 111 a and fixed to the base 111 by a clamp 115. Next, as shown in FIG. 14B, the expansion member 113 of the expansion means 112 that supports the region 301 where the semiconductor wafer 2 is present in the dicing tape 30 is moved to the reference position shown in FIG. To the extended position shown in FIG. As a result, the expandable dicing tape 30 is expanded, so that the gap between the dicing tape 30 and the chip 20 is generated and the adhesion is lowered, so that the chip 20 can be easily detached from the dicing tape 30. A gap is formed between the individual semiconductor chips 20.

  Next, as shown in FIG. 13, the pickup collet 116 disposed above the pickup device 11 is operated to separate the individual chips 20 from the upper surface of the dicing tape 30 and transport them to a tray (not shown) (pickup process). . At this time, the ultraviolet irradiation lamp 114 disposed in the expansion member 113 is turned on to irradiate the dicing tape 30 with ultraviolet rays, so that the adhesive force of the dicing tape 30 is reduced, so that it can be detached more easily.

  By using the pickup device 11 described above, the dividing step can also be performed. That is, as shown in FIG. 15A, the frame 3 in which the semiconductor wafer 2 (the altered layer 210 is formed along the planned dividing line 21) before the dividing step is supported via the dicing tape 30. Is mounted on the mounting surface 111 a of the cylindrical base 111 and fixed to the base 111 by the clamp 115. Next, as shown in FIG. 15B, the expansion member 113 of the expansion means 112 that supports the region 301 where the semiconductor wafer 2 exists in the dicing tape 30 is moved to the reference position shown in FIG. To the extended position shown in FIG. As a result, the expandable dicing tape 30 is expanded, so that a tensile force acts radially on the semiconductor wafer 2 to which the dicing tape 30 is adhered. When a tensile force acts radially on the semiconductor wafer 2 in this way, the strength of the altered layer 210 formed along the planned dividing line is reduced, so that the semiconductor wafer 2 is broken along the altered layer 210 and is individually broken. The semiconductor chip 20 is divided. Note that the amount of expansion of the dicing tape 30 in the dividing step, that is, the amount of expansion, can be adjusted by the amount of upward movement of the expansion member 113. According to experiments by the inventors, when the dicing tape 30 is stretched by about 20 mm. In addition, the semiconductor wafer 2 could be broken along the deteriorated layer 210. By carrying out the dividing step in this manner, a gap is generated between the dicing tape 30 and the chip 20 and the adhesion is lowered, so that the chip 20 can be easily detached from the dicing tape 30 and each chip is also separated. A gap is formed between 20. Thereafter, as shown in FIG. 14, the pickup collet 116 disposed above the pickup device 12 is operated to separate the individual chips 20 from the upper surface of the dicing tape 30 and convey them to a tray (not shown). In addition, since the back surface of the chip 20 is held by the pickup collet 116, it is desirable to transport the chip 20 to a tray (not shown) via the front / back reversing means.

The perspective view of the semiconductor wafer divided | segmented by the processing method of the wafer by this invention. The perspective view which shows the state which affixed the surface of the semiconductor wafer shown in FIG. 1 on the dicing tape with which the cyclic | annular flame | frame was mounted | worn. Explanatory drawing of the grinding | polishing process in the processing method of the wafer by this invention. The principal part perspective view of the laser processing apparatus which implements the deteriorated layer formation process in the processing method of the wafer by this invention. The block diagram which shows simply the structure of the laser beam irradiation means with which the laser processing apparatus shown in FIG. 4 is equipped. The simplification figure for demonstrating the condensing spot diameter of a pulse laser beam. Explanatory drawing of the deteriorated layer formation process in the processing method of the wafer by this invention. Explanatory drawing which shows the state formed by laminating | stacking a deteriorated layer inside a wafer in the deteriorated layer formation process shown in FIG. Explanatory drawing which shows 1st Embodiment of the division | segmentation process in the processing method of the wafer by this invention. Explanatory drawing which shows 2nd Embodiment of the division | segmentation process in the processing method of the wafer by this invention. Explanatory drawing which shows 3rd Embodiment of the division | segmentation process in the processing method of the wafer by this invention. Explanatory drawing which shows 4th Embodiment of the division | segmentation process in the processing method of the wafer by this invention. The perspective view of the pick-up apparatus which implements the expansion process and the pick-up process in the processing method of the wafer by this invention. Explanatory drawing which shows the expansion process in the processing method of the wafer by this invention. Explanatory drawing which implemented the division | segmentation process and the expansion process using the pickup apparatus shown in FIG.

Explanation of symbols

2: Semiconductor wafer 20: Semiconductor chip 21: Planned division line 22: Circuit 210: Alteration layer 3: Annular frame 30: Dicing tape 4: Polishing device 41: Chuck table of polishing device 43: Polishing tool 5: Laser processing device 51 : Laser processing apparatus chuck table 51: Laser beam irradiation means 53: Imaging means 6: Ultrasonic splitting apparatus 61: Cylindrical base 62: First ultrasonic oscillator 63: Second ultrasonic oscillator 7: Laser processing apparatus 71 : Chuck table of laser processing apparatus 8: bending division apparatus 1: cylindrical base 82: bending load applying means 9: bending division apparatus 91: cylindrical base 93: pressing member 11: pickup apparatus 111: cylindrical base 112 : Expansion means 113: Expansion member 114: Ultraviolet irradiation lamp 116: Picker Pucolette

Claims (3)

A wafer dividing method for dividing a wafer in which functional elements are arranged in a region partitioned by a division line formed in a lattice shape on the surface, along the division line.
A frame holding step of attaching the wafer surface to a dicing tape attached to an annular frame;
A polishing step for polishing the back surface of the wafer whose surface is attached to a dicing tape mounted on a frame;
A deteriorated layer forming step of irradiating a pulsed laser beam having transparency to the wafer from the back side of the polished wafer along the planned dividing line, and forming a modified layer along the planned dividing line inside the wafer;
A dividing step of applying an external force along the planned dividing line on which the altered layer of the wafer held by the frame is formed, and dividing the wafer into individual chips along the planned dividing line;
An expansion process for expanding the dicing tape to which the wafer divided into individual chips is attached and expanding the distance between the chips;
Picking up each chip from the expanded dicing tape, and
A wafer dividing method characterized by the above.   2. The method for dividing a wafer according to claim 1, wherein the deteriorated layer formed in the inside of the wafer in the deteriorated layer forming step is formed so as to be exposed at least on the surface of the wafer.   The wafer dividing method according to claim 1, wherein the dividing step is performed by expanding a dicing tape in the expanding step.

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