JP2005222746A - Thin-film heating element and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem that, although a resistance heating element is used for various material sources or for heating of substrates, and there is recently growing need for a heating element material chemically stable at all atmospheres, and in response to the above, heating elements using silicon carbide, molybdenum, tantalum, and tungsten are hitherto known, reduction of the thickness of the film and downsizing are difficult, and shapes are mostly limited to plate or wire shapes with poor thermal efficiency. <P>SOLUTION: The thin-film heating element is structured so as to improve the disadvantage of MoSi<SB>2</SB>by directly depositing it in a crucible or the like as a thin film with the use of an RF magnetron sputtering device or the like. With this, heating with high thermal efficiency is realized. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

The present invention relates to a thin film heating element in which molybdenum disilicide (MoSi ₂ ) is formed in a thin film on a substrate and a method for manufacturing the same.

  Resistance heating elements are used for various material sources or substrate heating in vacuum vapor deposition apparatuses, CVD apparatuses, and the like, and in recent years, chemically stable heating element materials in various atmospheres are required. Conventionally, heating elements using silicon carbide, molybdenum, tantalum, and tungsten are known, but thinning is difficult and cannot be reduced. Commercially available heater heating elements are rod-shaped, linear, and plate-shaped. (See, for example, Patent Document 1) The efficiency of heat transfer to an object to be heated, a heating crucible (crucible), etc. is low, and curved surface heat generation is difficult. A heating element having an arbitrary shape capable of efficient heating corresponding to a curved surface shape is desired.

Molybdenum disilicide (MoSi ₂ ), one of the non-oxide ceramics with good conductivity similar to metals, has a very high melting point of about 2030 ° C, and in air, up to about 1800 ° C, which is higher than the SiC heating element Although it can be used, it is brittle at room temperature and has a difficulty in being softened at high temperature, and it is difficult to use as a resistance heating element.
JP-A-8-153568 (page 3, FIG. 1)

The disadvantage of MoSi ₂ can be improved by depositing it directly as a thin film on a crucible or other substrate using an RF magnetron sputtering system, etc., enabling the provision of a MoSi ₂ thin film heating element for the purpose of highly efficient resistance heating .

  In order to solve the above-mentioned problems, the following means and method are employed in the thin film heating element and the manufacturing method thereof according to the present invention.

  (1) A thin film heating element comprising a thin film of molybdenum disilicide, molybdenum silicide or molybdenum platinum silicide formed in a thin film on a substrate, or a thin film mainly composed of molybdenum disilicide, molybdenum silicide or molybdenum platinum silicide.

(2) A thin-film heating element including the above-described substrate in which a thin film of molybdenum disilicide, molybdenum silicide, or molybdenum platinum silicide or a thin film mainly composed of molybdenum disilicide, molybdenum silicide, or molybdenum platinum silicide is formed on the substrate.
(3) The thin film heating element according to claim 1 or 2, wherein the thin film is formed by any one of sputtering, vacuum deposition, PVC, and CVD.
(4) The thin film heating element according to any one of (1) and (2), wherein the base is an alumina base.
(5) The thin film heating element according to (1) or (2), wherein the substrate is a substrate made of BN or SBN.
(6) The thin film heating element according to any one of (1) and (2), wherein the base is a base made of sialon or silicon nitride.
(7) The thin film heating element according to any one of (1) and (2), wherein the base is a base having an arbitrary curved surface.
(8) The thin film heating element according to any one of (1) and (2), wherein the base has a plate shape.
(9) The thin film heating element according to any one of (1) and (2), wherein the base has a crucible shape.
(10) The thin film heating element according to any one of (1) and (2), wherein the base has a rod shape.
(11) The thin film heating element according to any one of (1) and (2), wherein the base is cylindrical.
(12) The thin film heating element according to any one of (1) to (11), which has an electrode layer or a terminal.

  (13) A thin film of molybdenum disilicide, molybdenum silicide, or molybdenum platinum silicide, or molybdenum disilicide, molybdenum silicide, or molybdenum platinum silicide on an alumina, BN, SBN, sialon, or silicon nitride substrate. A method for producing a thin film heating element, characterized in that a thin film containing as a main component is formed.

  (14) A thin film of molybdenum disilicide, molybdenum silicide, or molybdenum platinum silicide, or molybdenum disilicide, molybdenum silicide, or molybdenum platinum silicide on an alumina, BN, SBN, sialon, or silicon nitride substrate. A method for producing a thin film heating element, characterized in that a thin film containing as a main component is formed by any one of sputtering, vacuum deposition, PVC, and CVD.

  According to the thin film heating element of the present invention, the heat transfer efficiency is high, the heating rate and the cooling rate are fast, and uniform surface heating of an arbitrary shape is possible.

The thin film heating element of the present invention improves the disadvantages of MoSi ₂ by directly depositing it as a thin film on a substrate, a crucible or the like using an RF magnetron sputtering apparatus, etc., and enables highly efficient resistance heating. It is a thin film heating element of MoSi ₂ thin film. As the base material on which the MoSi ₂ thin film is deposited, boron nitride BN, SBN, sialon, silicon nitride substrate, etc., which are used as materials for crucibles for sources such as alumina and organic EL, which are general heat-resistant materials, are used. Further, a substrate made of alumina, silicon nitride, boron nitride, silicon nitride added with various additives, boron nitride or the like is used.
Hereinafter, embodiments of the thin film heating element of the present invention will be described with reference to the drawings. In addition, when the component which attached | subjected the same code | symbol performed in embodiment performs the same operation | movement, description may be abbreviate | omitted again.
(Embodiment 1)

FIG. 1 is a diagram showing an embodiment of a thin film heating element of the present invention. In FIG. 1, electrode layers 11a and 11b of platinum Pt are provided at both ends of the surface of a rectangular alumina substrate 10. Molybdenum silicide MoSi ₂ thin film layers 12, 12a, 12b are provided so as to cover the alumina substrate 10 and the electrode layers 11a, 11b. The MoSi ₂ layers 12a and 12b above the electrode layers 11a and 11b are slightly raised. Terminals 13a and 13b are provided in exposed portions of the electrode layers 11a and 11b where the MoSi ₂ layers 12a and 12b are not provided. When a current is passed between the two terminals 13a and 13b, the MoSi ₂ thin film layer 12 generates heat. That is, the MoSi ₂ thin film layer 12 becomes a thin film heating element.
A method for producing the thin film heating element on the surface of the substrate 10 will be described.

Molybdenum silicide MoSi ₂ (manufactured by Nacalai Tesque (registered trademark)) was pressure-formed at 25 MPa on an oxygen-free copper dish-shaped target holder with a diameter of 12 cm, and a capacitively coupled parallel plate magnetron sputtering device (Anelva Substrate for depositing a MoSi ₂ thin film in a position facing the RF magnetron sputtering system that combines RF power supply (Tokyo High Power (registered trademark), RF-500) with SPF-210B (registered trademark) To fix. An alumina substrate (purity 95.3%, Furuuchi Chemical (registered trademark), thickness 1.0 mm) is used as the substrate. The sputtering conditions are a discharge frequency of 13.56 MHz, a discharge power of 200 W, a discharge gas with a constant Ar flow rate of 400 ml / min, and a discharge pressure of 0.53 Pa. The substrate temperature is 700 ° C., 800 ° C., or a natural temperature rise without heating the substrate, and the film formation time is about 2 hours, 4 hours, or 6 hours. In the case of film formation on a crucible, the crucible is naturally heated without heating.

Regarding the MoSi ₂ thin film on the alumina substrate manufactured by the above method, the manufacturing process and the properties of the manufactured MoSi ₂ thin film will be described. A film forming speed of about 0.9 μm / h can be obtained under the above sputtering conditions. In natural temperature rise without substrate heating, the substrate temperature is about 180 ° C. due to the effect of preliminary discharge at the start of thin film deposition on the substrate, and the substrate temperature stabilizes at about 350 ° C. about 1 hour after the start of deposition. When the film formation time is 4 or 6 hours at a substrate temperature of 700 ° C, slight unevenness occurs in the deposited MoSi ₂ thin film, and a difference in the size of the surface shape can be observed. In this case, the difference in the surface state depending on the position of the thin film is almost unidentifiable. The resistance value of thin films deposited at a substrate temperature of 700 ° C. or a natural temperature rise in a film formation time of 2 hours by the DC 4 probe method is 0.27 to 0.29Ω on average. The crystal structure of the target MoSi ₂ is tetragonal (Tetragonal), and the crystal structure of the MoSi ₂ thin film deposited on the alumina substrate is hexagonal (Hexagonal) under any sputtering conditions. However, the orientation is different, and it is considered that the orientation changes, particularly when the film forming time is lengthened, and is related to the unevenness of the surface shape.

In general, when film formation by sputtering is performed in Ar gas, it often has a so-called columnar structure in which all the crystals inside the thin film stand on the substrate in a columnar shape. For a MoSi ₂ thin film deposited on an alumina substrate at a substrate temperature of 700 ° C. and a film formation time of 4 hours, such a columnar structure can be confirmed when the substrate is cut and the cross section of the thin film is observed by SEM.

The MoSi ₂ thin film deposited on the alumina substrate has a hexagonal crystal structure different from the target tetragonal system under any sputtering condition. The heat generation characteristics in a vacuum of a MoSi ₂ thin film heating element produced using an alumina substrate are almost stable. In particular, in the MoSi ₂ thin film on an alumina substrate, no remarkable change can be confirmed even after heat generation.
Next, a method for producing the electrode layers 11a and 11b of the MoSi ₂ thin film heating element using the alumina substrate 10 will be described.

It is considered appropriate to produce Pt with a high melting point of 1770 ° C as a heating element electrode by paste firing. However, in the procedure of firing Pt paste in air after depositing a MoSi ₂ thin film, MoSi ₂ The Si may be oxidized. Therefore, a Pt electrode layer is first prepared on an alumina substrate, and a MoSi ₂ thin film is deposited thereon to produce a heating element. A mask is applied to a portion where the MoSi ₂ thin film is not desired to be deposited.

The characteristics of the MoSi ₂ thin film heating element when a current is passed between the two electrode layers 11a and 11b are as follows. When the substrate temperature is 700 ° C or the film formation time is 2 hours with natural temperature rise, the heating element is heated from about room temperature to about 600 ° C under direct current in a vacuum of about 10-6Torr (10-4Pa) in air atmosphere. When the resistance-equilibrium exothermic temperature characteristic (RT characteristic) at the time of temperature rise when repeatedly generating heat is measured, the temperature coefficient is positive and the characteristic varies after the first few times, but then the characteristic stabilizes. Further, even when the substrate temperature of 700 ° C. and the natural temperature rise are compared, there is no significant difference in characteristics. As a result of examining the XRD pattern by powder X-ray diffractometry for MoSi ₂ thin film deposited on an alumina substrate with a natural temperature rise without substrate heating and a film formation time of 2 hours, the temperature was changed in vacuum. In the range of 1000 ° C., a change in the crystal structure of the MoSi ₂ thin film or the alumina substrate due to temperature cannot be confirmed, and a stable heating element is formed. As for the MoSi ₂ thin film on the Pt electrode, Pt may have taken in MoSi ₂ , but the heat generation characteristics are stabilized, so there is no particular problem.

In addition, after depositing a MoSi ₂ thin film, the electrode layers 11a and 11b may be coated with a Pt paste and fired in a nitrogen atmosphere. In this case, Si of MoSi ₂ is oxidized. There is no fear. What is necessary is just to braze the terminal 13 on the electrode layer 11 by the baked Pt paste.
(Embodiment 2)

A thin film heating element in which a MoSi ₂ thin film is formed on a substrate made of a boron nitride BN material or a boron nitride / silicon nitride composite SBN / 50 material will be described. The substrate 10 includes a BN substrate (purity 99%, Furuuchi Chemical (registered trademark), thickness 1.0 mm) and a composite BN substrate (BN 50%, Si ₃ N ₄ 50%, E & M (registered trademark), thickness 1.0 mm). ) (Hereinafter referred to as SBN / 50), etc., and using the same apparatus as described in the first embodiment, a MoSi ₂ thin film is deposited, and the thin film heat generation having the same structure as described in FIG. The body can be made.

According to the XRD pattern of the MoSi ₂ thin film deposited on the BN or SBN / 50 substrate under various conditions, except when the substrate temperature is 700 ° C. and the deposition time is 4 hours, Although the orientation is different, the crystal structure is hexagonal. When the substrate temperature is 700 ° C and the film formation time is 4 hours, a peak different from MoSi ₂ described in the JCPDS card appears, but the composition of the MoSi ₂ thin film deposited on the BN substrate is 700 ° C or 800 ° C. It almost coincides with that of the MoSi ₂ thin film on the alumina substrate at any temperature.

It was confirmed that a MoSi ₂ thin film having a hexagonal crystal structure similar to that of an alumina substrate was deposited on a BN or SBN / 50 substrate by sputtering conditions. Instead of the hexagonal BN or SBN / 50 substrate, a cubic boron nitride substrate 10 may be used.
(Embodiment 3)

Next, an example in which a MoSi ₂ thin film heating element is manufactured on a sialon or silicon nitride substrate having excellent mechanical properties such as high-temperature strength, fracture toughness, and thermal shock resistance will be described. As a sialon or silicon nitride substrate, SAN-2 (α-Sialon, α-Si ₃ N ₄ , Shinagawa Fine Ceramics (registered trademark), thickness 2.0-2.5 mm) was used. Note that the composition of sialon is known as fine ceramics composed of Si, Al, O, and N, in which aluminum oxide is added to silicon nitride. Deposition can be performed under conditions of natural temperature rise without substrate heating or substrate temperature of 700 ° C., but the conditions are not limited to this. The deposited thin film is uniform without peeling. Although the orientation is different from that of the alumina substrate, the crystal structure of the MoSi ₂ thin film is a hexagonal system under any sputtering conditions. However, when the substrate temperature is 700 ° C, a peak different from that of MoSi ₂ described on the JCPDS card appears around 55 °, and it appears when the substrate temperature is 700 ° C and the film formation time is 4 hours on the BN or SBN / 50 substrate. The highest intensity peak and 2θ? The resistance value by DC 4 probe method is 0.26Ω on average at natural temperature rise and 0.30Ω on average at 700 ° C, which is the same value as MoSi ₂ thin film deposited on an alumina substrate under the same conditions. As a result of observation of the surface shape by SEM, a linear pattern considered to be affected by the surface shape of the sialon or silicon nitride substrate was observed, and the boundary between the particle aggregates was not clear as in the case of the alumina substrate It is. The composition is almost the same as in the case of the alumina substrate, and roughly corresponds to the theoretical value Mo: Si = 1: 2.
(Embodiment 4)
According to the present invention, not only the flat substrate 10 described in the first and second embodiments, but also a thin film heating element in which a MoSi ₂ thin film is formed on a base having a curved surface, for example, a crucible base. Can be made.

FIG. 2 shows an example of the structure of a MoSi ₂ thin film high-temperature heating element using an alumina crucible. In FIG. 2A, a MoSi ₂ thin film layer 22 serving as a MoSi ₂ thin film heating element is formed on the outer surface of an alumina crucible 20. In the vicinity of the opening and bottom of the crucible 20, electrode layers 21a and 21b are formed on the alumina. The MoSi ₂ thin film layers 22a and 22b above the electrode layers 21a and 21b are slightly raised. Lead wires 23a and 23b are drawn through the MoSi ₂ thin film layers 22a and 22b above the electrode layers 21a and 21b. FIG. 2B shows the structure of the electrode layer 21a and the lead wire 23a in the vicinity of the opening.

In magnetron sputtering apparatus described in the first embodiment, when depositing a MoSi ₂ thin film while rotating by attaching a crucible rotation mechanism, it becomes possible to deposit a uniform MoSi ₂ thin film around the crucible. When it is difficult to heat the crucible itself, a natural temperature rise may be used as in the case of no substrate heating. Even without substrate heating, the same hexagonal MoSi ₂ thin film can be deposited on both BN and SBN / 50 as in the case of an alumina substrate.

A description will be given of an example in which a heating element was prototyped using an alumina crucible. The alumina crucible is 99.5% pure. As in the case of the alumina substrate, an electrode was first made of an alumina crucible (inner diameter 12 mm, outer diameter 15 mm, length 23 mm) with Pt paste and Pt wire, and using a rotating mechanism, a MoSi ₂ thin film was placed outside the crucible. Deposit under conditions without crucible heating. A heating element thin film was formed over 6 hours. Since the heating element thus manufactured has a low resistance value, the heating part of the MoSi ₂ thin film is spirally cut to have an appropriate resistance value. The resistance-equilibrium exothermic temperature characteristics (RT characteristics) at the time of temperature rise when repeatedly generating heat up to about 500 ° C with DC current in a vacuum of about 10-6 Torr (10-4 Pa) in air atmosphere Although the tendency in the high temperature region was different from the characteristics of the heating element produced using the alumina substrate, the resistance value variation due to repeated heat generation tended to stabilize.

Looking at the relationship between voltage-heat generation temperature and power-heat generation temperature after 50 times of heat generation and heat release, although some discoloration occurs in the heat generation part of MoSi ₂ thin film after heat generation, the heat generation temperature is voltage On the other hand, it was almost linear, and the exothermic temperature was controllable.

A thin film heating element may be fabricated using an alumina crucible in an ultra-high vacuum evacuation apparatus that can reach about 10-9 Torr (10-7 Pa). When a Pt electrode is first prepared in an alumina crucible, lead holes 23aa and 23b shown in FIG. 2B can be formed if a mask of Pt wire is taken into account when sputtering MoSi ₂ . it can. After producing the MoSi ₂ thin film, a Pt wire may be wound around the MoSi ₂ thin film to form an electrode. If the resistance of MoSi ₂ thin film heating element is too low, the electrode layer 21a of MoSi ₂ thin film heating element, the heating portion sandwiched 21b may be any suitable resistance cutting spirally.

An example of producing a thin film heating element in another crucible shape will be described. A MoSi ₂ thin film is deposited on an alumina crucible (inner diameter: 11 mm, outer diameter: 13 mm, length: 61 mm) under conditions of no crucible heating and a film formation time of 3 hours. For the preparation of the electrode, a Pt wire is wound and then the electrode is uniformly formed using Pt paste and fired at 1000 ° C. for 1 hour under vacuum exhausted by a rotary pump. Note that the Pt paste is heated so that the temperature rises and falls rapidly. When the RT characteristics of the thin-film heating element produced in this way were measured in the ultra-high vacuum evacuation system and the pressure change in the vacuum vessel was measured, the heat generation of the MoSi ₂ thin film was very stable and the power of about 190 W The exothermic temperature achieves 1000 ℃. The pressure tends to increase initially by degassing and then decrease.

  FIG. 3 shows the measurement results of the RT characteristic and the pressure change in the vacuum vessel when the heating element is repeatedly heated to about 1000 ° C. by direct current energization. This RT characteristic is due to direct current conduction of a heating element produced by depositing a MoSi2 thin film on an alumina crucible (no crucible heating, film formation time 3 hours), winding Pt wire and firing Pt paste in vacuum. Repeated RT characteristics (at elevated temperature). From FIG. 3, the resistance value does not decrease even in a high temperature region of about 900 ° C., and the characteristics are almost linear. In addition, the characteristics of heat generation temperature with respect to electric power are very stable and the resistance value tends to gradually decrease due to repeated heat generation, but the rate of change gradually decreases, suggesting stabilization.

As described above, the MoSi ₂ thin film high-temperature heating element manufactured using an alumina crucible has almost linear RT characteristics, although the characteristics differ slightly depending on the manufacturing method. Can be produced.

In the magnetron sputtering apparatus described in the first embodiment, if a rotating mechanism is attached to a substrate having a curved surface as well as a crucible, a MoSi ₂ thin film can be uniformly deposited around the substrate. When it is difficult to heat the substrate itself, the temperature may be increased naturally as in the case where the substrate is not heated. Even when the substrate is not heated, when BN or SBN / 50 is used as the substrate, the same hexagonal MoSi ₂ thin film can be deposited as in the case of the alumina substrate.
Alternatively, a MoSi ₂ thin film may be deposited on a sialon or silicon nitride curved substrate or a crucible substrate.

The holes for drawing out the lead wires 23a and 23b may be covered with a mask so that the MoSi ₂ thin film is not deposited in the Pt layer shape. Also, without using a mask, a part of the MoSi ₂ thin film deposited on the Pt layer is removed mechanically by cutting or polishing, or chemically removed to expose the Pt layer and braze the lead wire. May be.
(Embodiment 5)

In each of the above embodiments, an electrode layer and a terminal are provided. The thin film heating element of the present invention can be produced without using any electrode. A MoSi ₂ thin film is deposited on the surface of the crucible material without the electrode layers 21a and 21b. If a coil carrying high-frequency current is installed around the MoSi ₂ thin film heating element in the crucible, current is induced on the surface of the thin film by electromagnetic induction, Joule heat is generated, and heating is performed. In this structure, high temperature heating is possible without using a platinum electrode. The maximum heat generation temperature is determined by the input power and the degree of high frequency coupling. Needless to say, the temperature should be within a range where the thin film does not break or react with the substrate material. The substrate is not limited to the crucible shape, and may be a plate shape, a rod shape, a cylindrical shape, or the like.
(Embodiment 6)

In each of the above embodiments, MoSi ₂ , that is, molybdenum silicide (molybdenum silicide) is used as a material for thinning, but MoSi ₂ may be the main component and other components may be contained. Further, platinum or the like may be added to MoSi ₂ and molybdenum platinum silicide may be used as a thin film material. Platinum silicide is a semiconductor and its resistance decreases with temperature. Molybdenum silicide MoSi ₂ has metallic properties, and its resistance increases with temperature. Molybdenum platinum silicide, which is an alloy thereof, exhibits a temperature change of resistance in a metallic, semiconducting, or intermediate state depending on the composition of molybdenum and platinum. In addition, when platinum is used for the electrode, platinum may partially diffuse into molybdenum silicide. However, if a thin film of a composition that does not diffuse platinum from the beginning is used, the change in resistance due to diffusion is reduced. Is possible. As in the fifth embodiment, the resistance temperature characteristic can be improved even when there is no electrode.

The material to be thinned or the material of the thin film produced in the form of a thin film according to the present invention will be further described. A material called molybdenum silicide has at least three different compositions. That is, Mo ₅ Si ₃ (melting point 2090 ° C.), MoSi ₂ (molybdenum disilicide) (melting point 1980 ° C.), Mo ₃ Si (melting point 2100 ° C.). These three types are representative, and there are various other compositions. Of these, molybdenum disilicide is practically used as a bulk heating element because it has the property that it does not change even when heated to 1650 ° C. for a long time in air. It is necessary to reduce the film thickness in other environments. Other compositions may exhibit good properties when used in vacuum. This is because molybdenum is a polyvalent element. In addition, as for what is known, melting | fusing point is around 2000 degreeC. As mentioned above, MoSi ₂ is usually called molybdenum disilicide. Some molybdenum disilicides contain no additives, but some contain a small amount of aluminum oxide when analyzed. It is considered that molybdenum disilicide has an effect of reducing the drawback of softening at high temperatures.

In the present invention, the above-described molybdenum disilicide, various molybdenum silicides, molybdenum platinum silicide, and a material mainly composed of molybdenum disilicide, various molybdenum silicides, and molybdenum platinum silicide, with some additives added. A thin film heating element of the present invention is produced by producing a thin film as a starting material. In addition, the composition of the thin film of the produced thin film heating element is also composed of molybdenum disilicide and various molybdenum silicides, or a composition mainly composed of molybdenum disilicide and various molybdenum silicides with some additives added. Become. Further, the composition may include a material for the electrode layer.
(Other embodiments and supplements)
The substrate is not limited to the above-mentioned substrate shape or crucible shape, but may be a rod shape or a cylindrical shape.
In addition to the base materials such as alumina, boron nitride BN, SBN, and silicon nitride (Si ₃ N ₄ ) such as sialon in the description of the above-described embodiment, these materials are the main components and various additives are added. May be a substrate.

In each of the above embodiments, the MoSi ₂ thin film and the molybdenum platinum silicide thin film are deposited by the RF magnetron sputtering apparatus, but other methods may be used as long as the thin film can be produced. For example, you may use PVC, CVD, etc. by other sputtering which does not depend on RF magnetron, a vacuum evaporation method, etc. Further, if a thin film can be produced, other thin film forming methods may be used.

In the description of each of the above embodiments, the thin film heating element of the present invention is a thin film portion of a thin film heating element made of various materials such as MoSi ₂ and molybdenum platinum silicide formed on the substrate, or the substrate and It refers to any one of the thin film heaters composed of thin films of the above-mentioned various materials such as MoSi ₂ and molybdenum platinum silicide.
In the first and second embodiments, the shape of the base, the position and shape of the electrode layers, the terminals, etc. are not limited to those shown in FIGS.

  The thin film heating element and the thin film heating device according to the present invention can be used in fields such as a processing apparatus that requires highly efficient heating and heat generation, and various manufacturing apparatuses.

The block diagram of one Embodiment of the thin film heating element of this invention The other block diagram of one Embodiment of the thin film heating element of this invention Diagram of heating characteristics of thin film heating element of the present invention

Explanation of symbols

10 Substrate 11a, 11b Electrode layer 12, 12a, 12b MoSi ₂ thin film layer 13a, 13b Terminal 20 Crucible 21a, 21b Electrode layer 22, 22a, 22b MoSi ₂ thin film layer 23a, 23b Lead wire

Claims (14)

A thin film heating element comprising a thin film of molybdenum disilicide, molybdenum silicide or molybdenum platinum silicide formed in a thin film on a substrate, or a thin film mainly composed of molybdenum disilicide, molybdenum silicide or molybdenum platinum silicide. A thin-film heating element comprising the above-mentioned substrate, in which a thin film of molybdenum disilicide, molybdenum silicide, or molybdenum platinum silicide, or a thin film mainly composed of molybdenum disilicide, molybdenum silicide, or molybdenum platinum silicide is formed on a substrate. The thin film heating element according to claim 1, wherein the thin film is formed by any one of sputtering, vacuum deposition, PVC, and CVD. The thin film heating element according to claim 1, wherein the substrate is an alumina substrate. The thin film heating element according to claim 1 or 2, wherein the base is a base made of BN or SBN. The thin film heating element according to claim 1, wherein the base is a base made of sialon or silicon nitride. The thin film heating element according to claim 1, wherein the substrate is a substrate having an arbitrary curved surface. The thin film heating element according to claim 1, wherein the base is plate-shaped. The thin film heating element according to claim 1, wherein the substrate has a crucible shape. The thin film heating element according to claim 1, wherein the base body has a rod shape. The thin film heating element according to claim 1, wherein the base is cylindrical. The thin film heating element according to any one of claims 1 to 11, comprising an electrode layer or a terminal. Mainly composed of a thin film of molybdenum disilicide, molybdenum silicide, or molybdenum platinum silicide, or molybdenum disilicide, molybdenum silicide, or molybdenum platinum silicide on an alumina, BN, SBN, sialon, or silicon nitride substrate A method of manufacturing a thin film heating element, comprising: forming a thin film. Mainly composed of molybdenum disilicide, molybdenum silicide, or molybdenum platinum silicide thin film, or molybdenum disilicide, molybdenum silicide, or molybdenum platinum silicide on a substrate made of alumina, BN, SBN, sialon, or silicon nitride A method for producing a thin film heating element, comprising forming the thin film by sputtering, vacuum deposition, PVC, or CVD.