JP2005203124A - Probe for plasma density information measurement, mounting fixture for plasma density information measurement, plasma density information measurement method, its device, plasma treatment method and its device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a probe for plasma density information measurement capable of preventing abnormal discharge to stably implement a process. <P>SOLUTION: When this measurement probe 7 is inserted into a chamber 1 in order to measure plasma density information, one end (tip) 17a on the insertion side of a dielectric member 17 is formed into a planar shape so that the one end 17a is nearly flush with an inside wall 1b of the chamber 1 in the insertion part; and the measurement probe 7 is equipped with a circumferential surface with a first conductor 18 covering the dielectric member brought into contact with the inside wall of an insertion hole 1A of the chamber 1 so as to fit the measurement probe 7 to the insertion hole 1A. By structuring the probe like that, the insertion hole 1A is closed by the circumferential surface of the first conductor 18 in insertion; abnormal discharge can be eliminated by preventing an electric field in the chamber 1 from flowing through the outside wall 1a of the chamber 1 through the insertion hole 1A; and the process can be stably implemented without hindering processes such as measurement of plasma density information and plasma treatment. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a manufacturing process of a semiconductor element or a thin film element, a probe for measuring plasma density information and a mounting tool for measuring plasma density information used in a particle beam source or an analyzer, a plasma density information measuring method and apparatus, and plasma processing. The present invention relates to a method and an apparatus thereof.

  Plasma CVD (chemical vapor deposition), plasma etching, and the like are known as techniques using plasma. In such plasma application technology, plasma in a plasma processing chamber (for example, a chamber) for performing plasma processing changes with time, so that information on the plasma density that shows the characteristics of the generated plasma, that is, plasma density information is sufficient. It is very important to grasp the proper process. Useful physical quantities relating to plasma density information include quantities related to electron density, that is, absorption frequency, plasma surface wave resonance frequency, and the like. By measuring these frequencies and the like, the plasma processing can be performed with sufficient knowledge of plasma density information.

  As a technique for measuring plasma density information, the present inventor has previously proposed the following invention. In this invention, as shown in FIG. 29, a plasma density information measuring probe 101 (hereinafter abbreviated as “measurement probe 101” as appropriate) for measuring plasma density information is inserted into a chamber 102 which is a plasma processing chamber. Then, a plasma density information measurement power source 103 (hereinafter abbreviated as “measurement power source 103” as appropriate) for measuring plasma density information to a plasma density information measurement power (hereinafter abbreviated as “measurement power” as appropriate). Measurement is performed by supplying the plasma PM in the chamber 102. The measurement probe 101 includes an antenna 104 that radiates electric power, a coaxial cable 105 that transmits electric power for measurement, and a dielectric tube 106 with a closed end. An antenna 104 and a coaxial cable 105 are connected and inserted.

  Measurement power is radiated from the measurement power supply 103 to the antenna 104 via the coaxial cable 105 and supplied to the plasma PM in the chamber 102. The measurement power supplied to the plasma PM in the chamber 102 is absorbed by the plasma load due to the plasma density or reflected and returned via the coaxial cable 105. That is, a surface wave having a wavelength depending on the electron density of the plasma is excited on the surface of the dielectric tube 106 of the measurement probe 101 by the measurement power supplied to the plasma PM, and the region where the surface wave propagates is exactly When it becomes an integral multiple of the wavelength, that is, when the surface wave resonates, absorption occurs, and when it is not an integral multiple, it reflects to the power supply side. At this time, when the frequency of the measurement power is swept, the wavelength changes in proportion to the frequency, and thus shows strong absorption only at a certain frequency. The plasma density information is measured by measuring this frequency.

  More specifically, the measurement power source 103 is a frequency sweep type, and outputs the measurement power while automatically sweeping at a frequency in a certain frequency band (for example, from 100 kHz to 2.5 GHz). When the measurement power is absorbed or reflected, the reflected power is transmitted in a direction opposite to the direction supplied to the plasma PM in the chamber 102 and is disposed between the measurement probe 101 and the measurement power source 103. The directional coupler 107 is detected and sent to an output device 108 that outputs to a monitor or the like. The frequency of the power for measurement output from the power supply for measurement 6 is also sequentially sent to the output device 108.

The output device 108 obtains a change in reflectance of the measurement power with respect to frequency based on the frequency of the measurement power and the detected reflection amount of the measurement power. In other words, the reflectance of the measurement power is obtained by calculating (detected reflection amount of the measurement power) ÷ [total output amount of the measurement power] at the same frequency, and the swept frequency and the reflectance of the measurement power are calculated. Plot it in correspondence. Then, based on the obtained result, an absorption frequency at which strong absorption of the power for measurement occurs due to the electron density is obtained. Since the above-described absorption frequency has a certain correlation with plasma density information such as electron density, the plasma density information can be easily obtained by obtaining the absorption frequency (see, for example, Patent Document 1).
JP 2000-100598 (page 6-9, FIG. 1, FIG. 2, FIG. 6, FIG. 7)

  However, the conventional example having such a configuration has the following problems.

  When the measurement probe 101 described above is used for plasma processing (plasma CVD or plasma etching processing), an electrode 109 connected to a processing voltage (bias voltage) is provided in the chamber 102 as shown in FIG. The substrate W which is an object to be processed is placed on the electrode 109. Since the plasma density information to be measured is measured with high spatial resolution, the result of the plasma density information to be measured differs depending on the arrangement position of the measurement probe 101, and in order to control the plasma processing more accurately, the substrate A measurement probe 101 is disposed in the vicinity of W (directly above in FIG. 30) and in the vicinity of the center of the chamber 102.

  However, when the measurement probe 101 is disposed in this manner, the measurement probe 101 becomes a shadow on the substrate W. Therefore, when a bias voltage is applied to the electrode 109 to perform plasma treatment, ions in the plasma move all at once toward the electrode 109 to which the plasma is applied, but the ions etc. are transferred to the substrate when the measurement probe 101 is shaded. It does not reach W or the electrode 109. As a result, it becomes difficult for the plasma processing to proceed, which adversely affects the plasma processing.

  Therefore, the present inventor has previously filed Japanese Patent Application No. 2002-210770 in order to solve such problems. In this application, the measurement probe 101 is placed on the substrate W or the like by utilizing the fact that the plasma density information measured in front of the object to be processed and the plasma density information near the center of the chamber 102 have a high correlation with each other. The plasma density information is measured by arranging it on the front side of the object to be represented. In this application, as shown in FIG. 31, it is also possible to perform measurement by arranging a measurement probe 101 further on the front side than the outer wall 102a or the inner wall 102b of the chamber 102 located on the front side of the substrate W. It suggests.

  When the measurement probe 101 is inserted into the chamber 102, as shown in FIGS. 29 to 32, an outer cylindrical guide part 110 for guiding the measurement probe 101 is provided, and the guide part 110 is a contact part. 110a. In addition, a seal member typified by an O-ring 111 is disposed between the measurement probe 101 and the guide portion 110 in order to prevent a gas such as air from entering between them. When the measurement probe 101 is inserted into the chamber 102 through the insertion port 102A provided in the chamber 102, the contact portion 110a contacts the outer wall 102a of the chamber 102 and the guide portion 110 stops. Then, only the measurement probe 101 is inserted.

  As shown in FIG. 32A, the measurement probe 101 is inserted closer to the object to be processed (for example, the substrate W) than the inner wall 102b of the chamber 102 and closer to the object (the inner wall 102b side) than the object to be processed. When measuring, the measurement probe 101 does not become a shadow of the object to be processed as described above, but the electric field E is shown in FIG. 32A by the measurement probe 101 protruding toward the object to be processed from the inner wall 102b. It becomes a flow. As a result, it interferes with processes such as measurement of plasma density information and plasma processing. In addition, the electric field is in a steady state until the measurement probe 101 is inserted into the chamber 102. However, there is a possibility that the steady state is broken by the measurement probe 101 protruding to the object to be processed after the insertion, resulting in abnormal discharge. it is conceivable that.

  On the other hand, as shown in FIG. 32 (b), when the measurement probe 101 is measured at a position closer to the front than the outer wall 102 a of the chamber 102, it does not interfere with the process, but the surface of the tube 106 of the measurement probe 101 is not disturbed. The gap between the guide portion 110 causes the electric field E to flow as shown in FIG. This flow enters the place where the O-ring 101 is disposed, and abnormal discharge occurs.

  The present invention has been made in view of such circumstances, and is capable of preventing abnormal discharge and stably performing a process, a plasma density information measuring probe, a plasma density information measuring mounting tool, and a plasma density An object of the present invention is to provide an information measuring method and apparatus, a plasma processing method and apparatus.

  In order to achieve such an object, the present invention has the following configuration.

  That is, the invention according to claim 1 is adapted to reflect or absorb the plasma density information measurement power supplied to the plasma from the plasma density information measurement power source for measuring the plasma density information indicating the characteristics of the plasma by the plasma load. A plasma density information measuring probe for measuring plasma density information based on an antenna for radiating power, a cable for transmitting the plasma density information measuring power, and a dielectric region coupled to the plasma. When a plasma density information measurement probe is inserted into the plasma processing chamber to measure density information, one end of the dielectric region on the insertion side is parallel to the inner wall of the plasma processing chamber at the insertion portion. When one end is formed into a flat shape and inserted into the plasma processing chamber, the insertion port is used for plasma density information measurement. The plasma density information measuring probe has a peripheral surface in which a dielectric region or a covering member that covers the dielectric region is brought into contact with the inner wall of the insertion slot so that the probe is fitted.

  [Operation / Effect] According to the invention of claim 1, plasma density information measurement power (hereinafter referred to as “measurement power source” as appropriate) supplied from a plasma density information measurement power source (hereinafter abbreviated as “measurement power source” as appropriate). The power for measurement ”is transmitted to the antenna via the cable of the plasma density information measurement probe, and is emitted from the antenna and absorbed by the plasma load or reflected and returned through the cable. That is, a plasma surface wave is excited in the dielectric region that is the surface of the plasma density information measurement probe, and the measurement power supplied from the measurement power source is coupled to the plasma through the dielectric region, thereby Absorption or reflection by plasma load occurs.

  Such a plasma density information measuring probe is configured as follows. That is, when the plasma density information measurement probe is inserted into the plasma processing chamber in order to measure the plasma density information, the one end on the insertion side of the dielectric region described above with respect to the inner wall of the plasma processing chamber in the insertion portion is Cover the dielectric region or the dielectric region so that one end is configured in a flat shape so that it is parallel and inserted into the plasma processing chamber so that the plasma density information measurement probe fits into the insertion port. The probe for measuring plasma density information has a peripheral surface in which a member is brought into contact with the inner wall of the insertion opening.

  With this configuration, when the probe for measuring plasma density information is inserted into the plasma processing chamber, the insertion port is formed by the dielectric region of the probe for measuring plasma density information or the peripheral surface of the covering member that covers the dielectric region. Is blocked. That is, there is no gap near the insertion opening. Accordingly, the electric field in the plasma processing chamber does not flow to the outer wall of the plasma processing chamber through the insertion port, and abnormal discharge can be eliminated. Also, one end on the insertion side of the dielectric region is formed in a planar shape so as to be parallel to the inner wall of the plasma processing chamber in the insertion portion, and one end on the insertion side of the dielectric region and the plasma processing chamber in the insertion portion When the plasma density information measuring probe is inserted into the plasma processing chamber up to a position where the inner wall is substantially flush with the inner wall, the plasma density information measuring probe does not protrude from the inner wall of the plasma processing chamber. It does not interfere with processes such as measurement and plasma treatment.

  As described above, abnormal discharge can be prevented and the process can be performed stably. Here, “substantially the same plane” in this specification means that the outer diameter of the dielectric region of the plasma density information measurement probe facing the plasma processing chamber (the portion in contact with the plasma) is r ( When the shortest distance is r) in the case of an ellipse and the shortest distance between opposite sides is r) in the case of a polygon, the inner wall of the plasma processing chamber and one end on the insertion side of the dielectric region are + r to −r with respect to the insertion direction. The range is shown (see FIG. 3). For example, when the outer diameter of the probe for measuring plasma density information is 10 mm, if the inner wall of the plasma processing chamber and one end on the insertion side of the dielectric region are in the range of +10 mm to −10 mm with respect to the insertion direction, the dielectric property It is assumed that one end on the insertion side of the region and the inner wall of the plasma processing chamber at the insertion portion are substantially flush with each other.

  A preferred example of the invention described in claim 1 described above is that the covering member described above is formed of a conductor (invention described in claim 2). With such a configuration, since the conductor covers the dielectric region, it is possible to shield the plasma surface wave and perform the process more stably.

  Further, another preferable example of the invention described in claim 1 described above includes a conductor that contacts the outer wall of the plasma processing chamber at the insertion portion when the probe for measuring plasma density information is inserted into the plasma processing chamber. (Invention of Claim 3) By providing such a conductor, it is possible to shield the plasma surface wave from the outer wall of the plasma processing chamber in the insertion portion and perform the process more stably.

  Further, the invention according to claim 4 is adapted to reflect or absorb the plasma density information measuring power supplied to the plasma from the plasma density information measuring power source for measuring the plasma density information indicating the characteristics of the plasma by the plasma load. A plasma density information measurement wearing device that measures plasma density information based on an antenna that radiates power, a cable that transmits the plasma density information measurement power, and a connector that electrically connects the antenna; A dielectric region that covers the antenna and is coupled to the plasma, and a conductive region that covers the dielectric region. When the plasma processing chamber is mounted to measure plasma density information, the plasma in the mounting portion One end of the mounting side is configured to be flat so that the dielectric region contacts the outer wall of the processing chamber. It is intended.

  [Operation / Effect] According to the invention described in claim 4, when the plasma processing chamber is mounted to measure plasma density information, the above-described dielectric region contacts the outer wall of the plasma processing chamber in the mounting portion. Thus, one end on the mounting side is configured to be planar. With this configuration, when the plasma density information measurement mounting tool is mounted in the plasma processing chamber, the plasma surface wave is excited in the dielectric region via the outer wall of the plasma processing chamber in the mounting portion. The plasma density information measurement power (measurement power) supplied from the plasma density information measurement power supply (measurement power supply) is coupled to the plasma through its dielectric region, thereby absorbing or reflecting by the plasma load. Occur.

  In this way, since the plasma density information measurement mounting tool is simply mounted in the plasma processing chamber, changes such as plasma density information measurement and plasma processing can be performed stably without any change in the plasma processing chamber. In addition, since the dielectric region is covered with the conductive region, the process can be performed more stably by shielding the plasma surface wave. In addition, since the process can be performed simply by mounting the plasma density information measuring mounting tool of the present invention on the plasma processing chamber in the conventional plasma processing chamber, a highly versatile mounting tool for measuring plasma density information is realized. Can do.

  According to a fifth aspect of the present invention, the plasma density information is based on the reflection or absorption of the plasma density information measurement power supplied to the plasma from the plasma density information measurement power source for measuring the plasma density information. A plasma density information measurement wearing tool for measuring the antenna, a power transmitting antenna, a cable for transmitting the plasma density information measurement power and a connector for electrically connecting the antenna, and covering the antenna, And a dielectric region that couples to the plasma and a conductive region that covers the dielectric region, and when inserted into the insertion port of the plasma processing chamber to measure plasma density information, One end of the dielectric region is configured to be flat so that one end on the insertion side of the dielectric region is parallel to the inner wall of the plasma processing chamber. When inserted into the plasma processing chamber, the plasma density information measuring mounting tool has a peripheral surface in which the conductive region is brought into contact with the inner wall of the inserting port so that the plasma density information measuring mounting tool fits into the insertion port. It is characterized by comprising.

  [Operation / Effect] According to the invention described in claim 5, when the plasma density information is inserted into the insertion port of the plasma processing chamber and mounted, the inner wall of the plasma processing chamber in the insertion portion is mounted. Then, one end of the dielectric region is configured to be flat so that one end on the insertion side is parallel, and when inserted into the plasma processing chamber, a plasma density information measurement fitting is fitted into the insertion port. As described above, the plasma density information measurement wearing tool includes a peripheral surface in which the conductive region is in contact with the inner wall of the insertion opening. With this configuration, when the plasma density information measuring mounting tool is inserted into the plasma processing chamber and mounted, the plasma surface is placed on the dielectric region of the plasma density information measuring mounting tool inserted into the plasma processing chamber. The plasma density information measurement power (measurement power) supplied from the plasma density information measurement power source (measurement power source) when the wave is excited is coupled to the plasma through its dielectric region, thereby causing a plasma load. Absorption or reflection by occurs. In addition, when mounted, the insertion port is closed by the peripheral surface of the conductive region, and there is no gap near the insertion port.

  In this way, since the plasma density information measurement mounting tool is simply inserted into the insertion port of the plasma processing chamber and mounted, the electric field in the plasma processing chamber does not flow to the outer wall of the plasma processing chamber through the insertion port. Processes such as measurement and plasma treatment can be performed stably. Also, one end on the insertion side of the dielectric region is formed in a planar shape so as to be parallel to the inner wall of the plasma processing chamber in the insertion portion, and one end on the insertion side of the dielectric region and the plasma processing chamber in the insertion portion When the plasma density information measuring mounting tool is inserted into the plasma processing chamber and mounted to a position where the inner wall of the plasma processing chamber is substantially flush with the inner wall of the plasma processing chamber, the plasma density information measuring mounting tool does not protrude from the inner wall of the plasma processing chamber. It does not interfere with processes such as plasma density information measurement and plasma processing. In addition, since the dielectric region is covered with the conductive region, the process can be performed more stably by shielding the plasma surface wave. Further, the plasma density information measuring tool of the present invention is inserted into a conventional plasma processing chamber into an insertion port of a conventional plasma processing chamber (for example, a gas pipe for supplying a gas for generating plasma). The process can be performed simply by mounting or by installing an insertion port in the plasma processing chamber and inserting the plasma density information measurement mounting tool into the insertion port of the plasma processing chamber. A mounting tool for measurement can be realized.

  The invention according to claim 6 is a plasma density information measuring method for measuring plasma density information indicating the characteristics of plasma, comprising: (a) a plasma density information measuring power source for measuring the plasma density information; A process of supplying power for measuring plasma density information to the plasma; and (b) reflection of the power for measuring plasma density information by a plasma load using a probe for measuring plasma density information, which is a probe for measuring plasma density information. Or measuring the plasma density information based on absorption, wherein the probe for measuring plasma density information includes an antenna that radiates power, a cable that transmits the power for measuring plasma density information, and a dielectric coupled to the plasma. A plasma density information measuring probe for measuring plasma density information. When inserted into the processing chamber, one end is configured to be flat so that one end on the insertion side of the dielectric region is parallel to the inner wall of the plasma processing chamber at the insertion portion, and is inserted into the plasma processing chamber. When this is done, the plasma density information measuring probe is connected to the inner surface of the insertion port with a dielectric region or a covering member covering the dielectric region so that the plasma density information measuring probe fits into the insertion port. In the process of (b), the plasma density information measuring probe is brought to a position where one end of the insertion side of the dielectric region and the inner wall of the plasma processing chamber in the insertion portion are substantially flush with each other. The measurement is performed in a state in which is inserted into the plasma processing chamber.

  [Operation / Effect] According to the invention described in claim 6, when plasma density information measuring power (measuring power) is supplied to the plasma from the plasma density information measuring power source (measuring power source) in the step (a). The measurement power incident from the measurement power source is absorbed by the plasma load or reflected and returned through the plasma density information measurement probe. In the process (b), the plasma density information is measured using the plasma density information measuring probe based on the reflection or absorption of the measurement power. Since the plasma density information indicates the characteristics of the plasma, the characteristics of the plasma are grasped by measuring the plasma density information.

  The plasma density information measuring probe used in the plasma density information measuring method according to claim 6 is configured as follows. That is, when the plasma density information measurement probe is inserted into the plasma processing chamber in order to measure the plasma density information, the one end on the insertion side of the dielectric region described above with respect to the inner wall of the plasma processing chamber in the insertion portion is Cover the dielectric region or the dielectric region so that one end is configured in a flat shape so that it is parallel and inserted into the plasma processing chamber so that the plasma density information measurement probe fits into the insertion port. The probe for measuring plasma density information has a peripheral surface in which a member is brought into contact with the inner wall of the insertion opening.

  The probe for measuring plasma density information is configured in such a manner that the one end on the insertion side of the dielectric region and the inner wall of the plasma processing chamber in the insertion portion are substantially flush with each other in the process of (b) described above. The measurement can be performed in a state in which is inserted into the plasma processing chamber, so that abnormal discharge can be prevented and the process can be performed stably.

  The invention according to claim 7 is a plasma density information measuring method for measuring plasma density information indicating characteristics of plasma, comprising: (A) a plasma density information measuring power source for measuring the plasma density information; A process of supplying power for measuring plasma density information to the plasma; and (B) a power for measuring plasma density information by a plasma load using a plasma density information measuring mounting tool that is a mounting tool for measuring plasma density information. Measuring the plasma density information based on the reflection or absorption of the plasma density information measuring device, the plasma density information measuring mounting tool comprising: an antenna for radiating power; a cable for transmitting the plasma density information measuring power; and the antenna. A connector for electrical connection; a dielectric region covering the antenna and coupled to the plasma; and a dielectric region A conductive region to be coated, and when mounted on the plasma processing chamber for measuring plasma density information, one end of the mounting side is arranged so that the dielectric region contacts the outer wall of the plasma processing chamber at the mounting portion. In the process of (B), the plasma density information measurement mounting tool is mounted in the plasma processing chamber by bringing one end of the mounting side of the dielectric region into contact with the outer wall of the plasma processing chamber in the process of (B). In this case, the measurement is performed.

  [Operation / Effect] According to the invention described in claim 7, when plasma density information measuring power (measuring power) is supplied to the plasma from the plasma density information measuring power source (measuring power source) in the process of (A). The measurement power incident from the measurement power supply is caused by the plasma load due to the plasma density via the plasma density information measurement fitting when the plasma density information measurement fitting is attached to the plasma processing chamber. Absorbed or reflected back. In the process (B), the plasma density information is measured by using the plasma density information measurement wearing tool based on the reflection or absorption of the measurement power. Since the plasma density information indicates the characteristics of the plasma, the characteristics of the plasma are grasped by measuring the plasma density information.

  The apparatus for measuring plasma density information used in the plasma density information measuring method according to claim 7 is configured as follows. That is, when the plasma processing chamber is mounted to measure plasma density information, one end of the mounting side is configured to be flat so that the above-described dielectric region contacts the outer wall of the plasma processing chamber at the mounting portion.

  Constructed in this way, during the process of (B) described above, the plasma density information measurement mounting tool is mounted in the plasma processing chamber with one end on the mounting side of the dielectric region in contact with the outer wall of the plasma processing chamber By measuring at, abnormal discharge can be prevented and the process can be performed stably.

  The invention according to claim 8 is a plasma density information measuring method for measuring plasma density information indicating plasma characteristics, comprising: (A) a plasma density information measuring power source for measuring the plasma density information; A process of supplying power for measuring plasma density information to the plasma; and (B) a power for measuring plasma density information by a plasma load using a plasma density information measuring mounting tool that is a mounting tool for measuring plasma density information. Measuring the plasma density information based on the reflection or absorption of the plasma density information measuring device, the plasma density information measuring mounting tool comprising: an antenna for radiating power; a cable for transmitting the plasma density information measuring power; and the antenna. A connector for electrical connection; a dielectric region covering the antenna and coupled to the plasma; and a dielectric region A conductive region to be coated, and when inserted into the insertion port of the plasma processing chamber for measurement of plasma density information, the dielectric region is disposed on the inner wall of the plasma processing chamber at the insertion portion. The conductive region is configured so that one end of the insertion side is formed in a flat shape so that the end is parallel, and the plasma density information measurement fitting is fitted into the insertion port when the insertion side is inserted into the plasma processing chamber. The mounting tool for measuring plasma density information has a peripheral surface in contact with the inner wall of the insertion port, and during the step (B), one end of the dielectric region on the insertion side and the plasma processing chamber in the insertion portion. The measurement is performed in a state in which the plasma density information measurement mounting tool is inserted into the plasma processing chamber and mounted to a position where the inner wall of the plasma processing apparatus is substantially flush with the inner wall.

  [Operation / Effect] According to the invention described in claim 8, when plasma density information measuring power (measuring power) is supplied to the plasma from the plasma density information measuring power source (measuring power source) in the process (A). The measurement power incident from the measurement power source is the plasma density through the plasma density information measurement fitting when the plasma density information measurement fitting is inserted into the plasma processing chamber insertion port. It is absorbed by the plasma load due to or reflected back. In the process (B), the plasma density information is measured by using the plasma density information measurement wearing tool based on the reflection or absorption of the measurement power. Since the plasma density information indicates the characteristics of the plasma, the characteristics of the plasma are grasped by measuring the plasma density information.

  The apparatus for measuring plasma density information used in the plasma density information measuring method according to claim 8 is configured as follows. That is, when the plasma processing chamber is inserted into the insertion port of the plasma processing chamber in order to measure plasma density information, one end of the dielectric region on the insertion side is parallel to the inner wall of the plasma processing chamber in the insertion portion. One end is configured to be flat so that when it is inserted into the plasma processing chamber, the conductive region contacts the inner wall of the insertion port so that the plasma density information measurement fitting is fitted into the insertion port. The mounting tool for measuring plasma density information includes the peripheral surface.

  Constructed in this way, during the process of (B) described above, plasma density information measurement mounting is performed until the insertion end of the dielectric region and the inner wall of the plasma processing chamber at the insertion portion are substantially flush with each other. By performing the measurement while the tool is inserted into the plasma processing chamber and mounted, abnormal discharge can be prevented and the process can be performed stably.

  The invention according to claim 9 is a plasma density information measuring apparatus for measuring plasma density information indicating the characteristics of plasma, and supplies plasma density information measuring power to the plasma in order to measure the plasma density information. A plasma density information measuring power source, and a plasma density information measuring probe for measuring plasma density information based on reflection or absorption of the plasma density information measuring power by a plasma load, and the plasma density information measuring probe Comprises an antenna for radiating power, a cable for transmitting the power for measuring plasma density information, and a dielectric region coupled to plasma, and the plasma density information measuring probe is subjected to plasma processing for measuring plasma density information. When inserted into the chamber, against the inner wall of the plasma processing chamber One end of the dielectric region is configured to be parallel so that one end on the insertion side is parallel, and when inserted into the plasma processing chamber, a probe for measuring plasma density information is fitted into the insertion port. The probe for measuring plasma density information is provided with a peripheral surface in which a dielectric region or a covering member that covers the dielectric region is brought into contact with the inner wall of the insertion opening.

  [Operation / Effect] According to the invention described in claim 9, the plasma density information measuring power (measuring power) incident from the plasma density information measuring power source (measuring power source) is the plasma density information measuring probe. Through the plasma, which is absorbed by the plasma load due to the plasma density or reflected back. Based on the reflection or absorption of the measurement power, the plasma density information is measured using the plasma density information measurement probe. Since the plasma density information indicates the characteristics of the plasma, the characteristics of the plasma are grasped by measuring the plasma density information.

  The plasma density information measuring probe used in the plasma density information measuring apparatus according to claim 9 is configured as follows. That is, when the plasma density information measurement probe is inserted into the plasma processing chamber in order to measure the plasma density information, the one end on the insertion side of the dielectric region described above with respect to the inner wall of the plasma processing chamber in the insertion portion is Cover the dielectric region or the dielectric region so that one end is configured in a flat shape so that it is parallel and inserted into the plasma processing chamber so that the plasma density information measurement probe fits into the insertion port. The probe for measuring plasma density information has a peripheral surface in which a member is brought into contact with the inner wall of the insertion opening.

  With this configuration, abnormal discharge can be prevented and the process can be performed stably.

  Similarly to the first aspect of the present invention, a preferred example of the above-described ninth aspect of the present invention is that the above-described covering member is made of a conductor (the tenth aspect of the present invention). With such a configuration, since the conductor covers the dielectric region, it is possible to shield the plasma surface wave and perform the process more stably.

  Further, another preferable example of the invention described in claim 9 is provided with a conductor that contacts the outer wall of the plasma processing chamber at the insertion portion when the probe for measuring plasma density information is inserted into the plasma processing chamber. (Invention of Claim 11) By providing such a conductor, it is possible to shield the plasma surface wave from the outer wall of the plasma processing chamber in the insertion portion and perform the process more stably.

  According to a twelfth aspect of the present invention, there is provided a plasma density information measuring apparatus for measuring plasma density information indicating plasma characteristics, and supplying plasma density information measuring power to the plasma in order to measure the plasma density information. A plasma density information measuring power source, and a plasma density information measuring mounting device for measuring plasma density information based on reflection or absorption of the plasma density information measuring power by a plasma load. The mounting tool includes an antenna that radiates power, a cable that transmits the plasma density information measurement power and a connector that electrically connects the antenna, a dielectric region that covers the antenna and is coupled to plasma, A conductive region covering the dielectric region, and a plate for measuring plasma density information. When worn during treatment chamber, it is characterized in that which constitutes the one end of the mounting side such that the dielectric region on the outer wall of the plasma processing chamber contacts the flat at the attachment portion.

  [Operation / Effect] According to the invention described in claim 12, the plasma density information measurement power (measurement power) incident from the plasma density information measurement power supply (measurement power supply) is used for plasma density information measurement. When mounted in the plasma processing chamber, it is absorbed by the plasma load or reflected back through the plasma density information measuring mounting tool due to the plasma density. Based on the reflection or absorption of the measurement power, the plasma density information is measured using the plasma density information measurement wearing tool. Since the plasma density information indicates the characteristics of the plasma, the characteristics of the plasma are grasped by measuring the plasma density information.

  The plasma density information measurement wearing tool used in the plasma density information measurement apparatus according to claim 12 is configured as follows. That is, when the plasma processing chamber is mounted to measure plasma density information, one end of the mounting side is configured to be flat so that the above-described dielectric region contacts the outer wall of the plasma processing chamber at the mounting portion.

  With this configuration, abnormal discharge can be prevented and the process can be performed stably. In addition, since the process can be performed simply by mounting the plasma density information measuring mounting tool in the plasma processing chamber in the conventional plasma processing chamber, a highly versatile plasma density information measuring apparatus can be realized.

  The invention according to claim 13 is a plasma density information measuring apparatus for measuring plasma density information indicating the characteristics of plasma, and supplies plasma density information measuring power to the plasma in order to measure the plasma density information. A plasma density information measuring power source, and a plasma density information measuring mounting device for measuring plasma density information based on reflection or absorption of the plasma density information measuring power by a plasma load. The mounting tool includes an antenna that radiates power, a cable that transmits the plasma density information measurement power and a connector that electrically connects the antenna, a dielectric region that covers the antenna and is coupled to plasma, A conductive region covering the dielectric region, and a plate for measuring plasma density information. When inserted and inserted into the insertion port of the processing chamber, one end of the dielectric region is configured to be flat with respect to the inner wall of the plasma processing chamber at the insertion portion. When the plasma processing chamber is inserted into the plasma processing chamber, the peripheral surface where the conductive region is in contact with the inner wall of the insertion port is fitted to the insertion port so that the plasma density information measurement tool is fitted into the insertion port. The tool is characterized by comprising.

  [Operation / Effect] According to the invention described in claim 13, the plasma density information measurement power (measurement power) incident from the plasma density information measurement power supply (measurement power supply) is mounted on the plasma density information measurement. When the tool is inserted into the insertion port of the plasma processing chamber and mounted, it is absorbed by the plasma load due to the plasma density or reflected and returned via the plasma density information measurement mounting tool. Based on the reflection or absorption of the measurement power, the plasma density information is measured using the plasma density information measurement wearing tool. Since the plasma density information indicates the characteristics of the plasma, the characteristics of the plasma are grasped by measuring the plasma density information.

  The plasma density information measuring wearing tool used in the plasma density information measuring apparatus according to claim 13 is configured as follows. That is, when the plasma processing chamber is inserted into the insertion port of the plasma processing chamber in order to measure plasma density information, one end of the dielectric region on the insertion side is parallel to the inner wall of the plasma processing chamber in the insertion portion. One end is configured to be flat so that when inserted into the plasma processing chamber, the conductive region is brought into contact with the inner wall of the insertion port so that the plasma density information measurement fitting is fitted into the insertion port. The mounting tool for measuring plasma density information is provided with the peripheral surface.

  With this configuration, abnormal discharge can be prevented and the process can be performed stably. In addition, the plasma density information measuring mounting tool is inserted into a conventional plasma processing chamber insertion port (for example, a gas pipe for supplying a gas for generating plasma) and mounted in a conventional plasma processing chamber. Alternatively, a plasma density information measuring device with high versatility can be achieved by providing an insertion port in the plasma processing chamber and inserting the plasma density information measurement mounting tool into the plasma processing chamber insertion port. Can be realized.

  The invention described in claim 14 is a plasma processing method for performing plasma processing on an object to be processed in plasma, wherein: (a) plasma density information from a power source for measuring plasma density information for measuring plasma density information A process of supplying measurement power to the plasma; and (b) reflection or absorption of the plasma density information measurement power by a plasma load using a plasma density information measurement probe which is a probe for measuring the plasma density information. And (c) a step of controlling plasma processing based on the measured plasma density information, the plasma density information measuring probe comprising: an antenna for radiating power; The plasma density information measurement power transmission cable, and a dielectric region coupled to the plasma. When a plasma density information measurement probe is inserted into the plasma processing chamber to measure density information, one end of the dielectric region on the insertion side is parallel to the inner wall of the plasma processing chamber at the insertion portion. One end of the electrode is formed in a flat shape, and when inserted into the plasma processing chamber, a dielectric region or a covering member that covers the dielectric region is inserted into the insertion port so that the plasma density information measuring probe is fitted into the insertion port. The plasma density information measuring probe has a peripheral surface in contact with the inner wall of the plasma processing apparatus, and in the process of (b), one end of the dielectric region on the insertion side and the inner wall of the plasma processing chamber in the insertion portion The measurement is performed with the plasma density information measuring probe inserted in the plasma processing chamber up to a position where the two are substantially in the same plane.

  [Operation / Effect] According to the invention described in claim 14, when the plasma density information measurement power (measurement power) is supplied to the plasma from the plasma density information measurement power source (measurement power source) in the step (a). The measurement power incident from the measurement power source is absorbed by the plasma load or reflected and returned through the plasma density information measurement probe. In the process (b), the plasma density information is measured using the plasma density information measuring probe based on the reflection or absorption of the measurement power. Since the plasma density information indicates the characteristics of the plasma, the plasma processing is controlled in the process (c) by measuring the plasma density information.

  The plasma density information measuring probe used in the plasma processing method according to claim 14 is configured as follows. That is, when the plasma density information measurement probe is inserted into the plasma processing chamber in order to measure the plasma density information, the one end on the insertion side of the dielectric region described above with respect to the inner wall of the plasma processing chamber in the insertion portion is Cover the dielectric region or the dielectric region so that one end is configured in a flat shape so that it is parallel and inserted into the plasma processing chamber so that the plasma density information measurement probe fits into the insertion port. The probe for measuring plasma density information has a peripheral surface in which a member is brought into contact with the inner wall of the insertion opening.

  The probe for measuring plasma density information is configured in such a manner that the one end on the insertion side of the dielectric region and the inner wall of the plasma processing chamber in the insertion portion are substantially flush with each other in the process of (b) described above. The measurement can be performed in a state in which is inserted into the plasma processing chamber, so that abnormal discharge can be prevented and the process can be performed stably.

  The invention described in claim 15 is a plasma processing method for performing plasma processing on an object to be processed in plasma, and (A) plasma density information from a power source for measuring plasma density information for measuring plasma density information. (B) Reflecting the plasma density information measurement power by a plasma load using a plasma density information measurement mounting tool which is a mounting tool for measuring the plasma density information. Alternatively, the method includes a step of measuring plasma density information based on absorption, and (C) a step of controlling plasma processing based on the measured plasma density information, and the plasma density information measurement wearing tool radiates power. An antenna for transmitting, a cable for transmitting the plasma density information measurement power, and a connector for electrically connecting the antenna, When the plasma processing chamber is mounted to measure plasma density information, the plasma in the mounting portion is provided with a dielectric region that covers the antenna and is coupled to the plasma and a conductive region that covers the dielectric region. One end of the mounting side is formed in a planar shape so that the dielectric region contacts the outer wall of the processing chamber, and the mounting side of the dielectric region on the outer wall of the plasma processing chamber during the process (B). The measurement is performed in a state in which a plasma density information measurement mounting tool is mounted in the plasma processing chamber with one end of the electrode being in contact with each other.

  [Operation / Effect] According to the invention described in claim 15, when plasma density information measuring power (measuring power) is supplied to the plasma from the plasma density information measuring power source (measuring power source) in the process (A). The measurement power incident from the measurement power supply is caused by the plasma load due to the plasma density via the plasma density information measurement fitting when the plasma density information measurement fitting is attached to the plasma processing chamber. Absorbed or reflected back. In the process (B), the plasma density information is measured by using the plasma density information measurement wearing tool based on the reflection or absorption of the measurement power. Since the plasma density information indicates the characteristics of the plasma, the plasma processing is controlled in the process (C) by measuring the plasma density information.

  The apparatus for measuring plasma density information used in the plasma processing method according to claim 15 is configured as follows. That is, when the plasma processing chamber is mounted to measure plasma density information, one end of the mounting side is configured to be flat so that the above-described dielectric region contacts the outer wall of the plasma processing chamber at the mounting portion.

  Constructed in this way, during the process of (B) described above, the plasma density information measurement mounting tool is mounted in the plasma processing chamber with one end on the mounting side of the dielectric region in contact with the outer wall of the plasma processing chamber By measuring at, abnormal discharge can be prevented and the process can be performed stably.

  The invention according to claim 16 is a plasma processing method for performing plasma processing on an object to be processed in plasma, wherein (A) plasma density information is measured from a power source for measuring plasma density information for measuring plasma density information. (B) Reflecting the plasma density information measurement power by a plasma load using a plasma density information measurement mounting tool which is a mounting tool for measuring the plasma density information. Alternatively, the method includes a step of measuring plasma density information based on absorption, and (C) a step of controlling plasma processing based on the measured plasma density information, and the plasma density information measurement wearing tool radiates power. An antenna for transmitting, a cable for transmitting the plasma density information measurement power, and a connector for electrically connecting the antenna, A dielectric region that covers the antenna and is coupled to the plasma, and a conductive region that covers the dielectric region, and is inserted into the insertion port of the plasma processing chamber to measure plasma density information. One end of the dielectric region is configured to be flat so that one end on the insertion side of the dielectric region is parallel to the inner wall of the plasma processing chamber in the insertion portion. The plasma density information measuring mounting tool includes a peripheral surface in which the conductive region is brought into contact with the inner wall of the insertion slot so that the plasma density information measuring mounting tool is fitted to the inner wall of the plasma density information measuring tool. In addition, the plasma density information measuring tool is inserted and mounted in the plasma processing chamber up to a position where one end of the insertion side of the dielectric region and the inner wall of the plasma processing chamber in the insertion portion are substantially flush with each other. Measure And it is characterized in Ukoto.

  [Operation / Effect] According to the invention described in claim 16, when the plasma density information measurement power (measurement power) is supplied to the plasma from the plasma density information measurement power supply (measurement power supply) in the step (A). The measurement power incident from the measurement power supply is caused by the plasma load due to the plasma density via the plasma density information measurement fitting when the plasma density information measurement fitting is attached to the plasma processing chamber. Absorbed or reflected back. In the process (B), the plasma density information is measured by using the plasma density information measurement wearing tool based on the reflection or absorption of the measurement power. Since the plasma density information indicates the characteristics of the plasma, the plasma processing is controlled in the process (C) by measuring the plasma density information.

  The apparatus for measuring plasma density information used in the plasma processing method according to claim 16 is configured as follows. That is, when the plasma processing chamber is inserted into the insertion port of the plasma processing chamber in order to measure plasma density information, one end of the dielectric region on the insertion side is parallel to the inner wall of the plasma processing chamber in the insertion portion. One end is configured to be flat so that when inserted into the plasma processing chamber, the conductive region is brought into contact with the inner wall of the insertion port so that the plasma density information measurement fitting is fitted into the insertion port. The mounting tool for measuring plasma density information is provided with the peripheral surface.

  Constructed in this way, during the process of (B) described above, plasma density information measurement mounting is performed until the insertion end of the dielectric region and the inner wall of the plasma processing chamber at the insertion portion are substantially flush with each other. By performing the measurement while the tool is inserted into the plasma processing chamber and mounted, abnormal discharge can be prevented and the process can be performed stably.

  The invention according to claim 17 is a plasma processing apparatus for performing plasma processing on an object to be processed in plasma, wherein the plasma density is supplied with plasma density information measurement power to measure plasma density information. An information measurement power source, a plasma density information measurement probe for measuring plasma density information based on reflection or absorption of the plasma density information measurement power by a plasma load, and plasma processing based on the measured plasma density information The plasma density information measuring probe includes an antenna that radiates power, a cable that transmits the plasma density information measuring power, and a dielectric region that is coupled to the plasma. A probe for measuring plasma density information is inserted into the plasma processing chamber to measure density information. When the insertion portion is configured in a planar shape so that one end of the insertion side of the dielectric region is parallel to the inner wall of the plasma processing chamber in the insertion portion, when inserted into the plasma processing chamber, The plasma density information measuring probe includes a peripheral surface in which a dielectric region or a covering member covering the dielectric region is brought into contact with the inner wall of the insertion port so that the plasma density information measuring probe is fitted to the insertion port. It is a feature.

  [Operation and Effect] According to the invention described in claim 17, the plasma density information measuring power (measuring power) incident from the plasma density information measuring power source (measuring power source) is the plasma density information measuring probe. Through the plasma, which is absorbed by the plasma load due to the plasma density or reflected back. Based on the reflection or absorption of the measurement power, the plasma density information is measured using the plasma density information measurement probe. Since the plasma density information indicates the characteristics of the plasma, the plasma processing is controlled by the control means by measuring the plasma density information.

  The plasma density information measuring probe used in the plasma processing apparatus according to claim 17 is configured as follows. That is, when the plasma density information measurement probe is inserted into the plasma processing chamber in order to measure the plasma density information, the one end on the insertion side of the dielectric region described above with respect to the inner wall of the plasma processing chamber in the insertion portion is One end is formed in a flat shape so as to be parallel, and when inserted into the plasma processing chamber, the dielectric region or the dielectric region is covered so that the probe for plasma density information measurement is fitted into the insertion port. The probe for measuring plasma density information has a peripheral surface in which the covering member is in contact with the inner wall of the insertion opening.

  With this configuration, abnormal discharge can be prevented and the process can be performed stably.

  Similarly to the first and ninth aspects of the invention, a preferred example of the above-described aspect of the invention of the seventeenth aspect is that the above-described covering member is made of a conductor (the invention of the eighteenth aspect). With such a configuration, since the conductor covers the dielectric region, it is possible to shield the plasma surface wave and perform the process more stably.

  In addition, another preferable example of the invention described in claim 17 includes a conductor that contacts the outer wall of the plasma processing chamber at the insertion portion when the plasma density information measurement probe is inserted into the plasma processing chamber. (Invention of Claim 19) By providing such a conductor, it is possible to shield the plasma surface wave from the outer wall of the plasma processing chamber in the insertion portion and perform the process more stably.

  According to a twentieth aspect of the present invention, there is provided a plasma processing apparatus for performing plasma processing on an object to be processed in plasma, wherein plasma density for supplying plasma density information measurement power to the plasma in order to measure plasma density information. A power source for information measurement, a plasma density information measurement mounting device that measures plasma density information based on reflection or absorption of the plasma density information measurement power by a plasma load, and plasma processing based on the measured plasma density information The plasma density information measurement wearing tool includes an antenna that radiates power, a cable that transmits the plasma density information measurement power, and a connector that electrically connects the antenna; Covering the antenna and covering the dielectric region with a dielectric region coupled to the plasma When mounted in a plasma processing chamber for measuring plasma density information, one end of the mounting side is planar so that the dielectric region contacts the outer wall of the plasma processing chamber in the mounting portion. It is characterized by comprising.

  [Operation / Effect] According to the invention of claim 20, the plasma density information measurement power (measurement power) incident from the plasma density information measurement power supply (measurement power supply) is used for plasma density information measurement. When mounted in the plasma processing chamber, it is absorbed by the plasma load or reflected back through the plasma density information measuring mounting tool due to the plasma density. Based on the reflection or absorption of the measurement power, the plasma density information is measured using the plasma density information measurement wearing tool. Since the plasma density information indicates the characteristics of the plasma, the plasma processing is controlled by the control means by measuring the plasma density information.

  The plasma density information measuring probe used in the plasma processing apparatus according to claim 20 is configured as follows. That is, when the plasma processing chamber is mounted to measure plasma density information, one end of the mounting side is configured to be flat so that the above-described dielectric region contacts the outer wall of the plasma processing chamber at the mounting portion.

  With this configuration, abnormal discharge can be prevented and the process can be performed stably. In addition, since the process can be performed simply by mounting the plasma density information measuring mounting tool in the plasma processing chamber in the conventional plasma processing chamber, a highly versatile plasma processing apparatus can be realized.

  The invention according to claim 21 is a plasma processing apparatus for performing plasma processing on an object to be processed in plasma, wherein the plasma density supplies power for plasma density information measurement to the plasma in order to measure plasma density information. A power source for information measurement, a plasma density information measurement mounting device that measures plasma density information based on reflection or absorption of the plasma density information measurement power by a plasma load, and plasma processing based on the measured plasma density information The plasma density information measurement wearing tool includes an antenna that radiates power, a cable that transmits the plasma density information measurement power, and a connector that electrically connects the antenna; Covering the antenna and covering the dielectric region with a dielectric region coupled to the plasma An insertion region of the dielectric region with respect to the inner wall of the plasma processing chamber at the insertion portion when the insertion region is inserted into the insertion port of the plasma processing chamber to measure plasma density information. The conductive region is inserted into the insertion port so that the plasma density information measuring fitting is fitted into the insertion port when the one end is formed in a plane shape so that one end of the electrode is parallel and inserted into the plasma processing chamber. The plasma density information measuring wearing tool is provided with a peripheral surface in contact with the inner wall of the plasma density information measuring tool.

  [Operation / Effect] According to the invention described in claim 21, the plasma density information measuring power (measuring power) incident from the plasma density information measuring power source (measuring power source) is attached to the plasma density information measuring power source. When the tool is inserted into the insertion port of the plasma processing chamber and mounted, it is absorbed by the plasma load due to the plasma density or reflected and returned via the plasma density information measurement mounting tool. Based on the reflection or absorption of the measurement power, the plasma density information is measured using the plasma density information measurement wearing tool. Since the plasma density information indicates the characteristics of the plasma, the plasma processing is controlled by the control means by measuring the plasma density information.

  The plasma density information measuring probe used in the plasma processing apparatus according to claim 21 is configured as follows. That is, when the plasma processing chamber is inserted into the insertion port of the plasma processing chamber in order to measure plasma density information, one end of the dielectric region on the insertion side is parallel to the inner wall of the plasma processing chamber in the insertion portion. One end is configured to be flat so that when inserted into the plasma processing chamber, the conductive region is brought into contact with the inner wall of the insertion port so that the plasma density information measurement fitting is fitted into the insertion port. The mounting tool for measuring plasma density information is provided with the peripheral surface.

  With this configuration, abnormal discharge can be prevented and the process can be performed stably. In addition, the plasma density information measuring mounting tool is inserted into a conventional plasma processing chamber insertion port (for example, a gas pipe for supplying a gas for generating plasma) and mounted in a conventional plasma processing chamber. Alternatively, it is possible to perform a process simply by providing an insertion port in the plasma processing chamber and inserting a plasma density information measurement mounting tool into the plasma processing chamber insertion port, thus realizing a highly versatile plasma processing apparatus. can do.

  According to the first, fourth, and fifth aspects of the present invention, when the plasma density information measuring probe is inserted into the plasma processing chamber in order to measure the plasma density information, the plasma processing chamber in the insertion portion is inserted. A probe for measuring plasma density information is inserted into the insertion port when one end of the dielectric region is configured in a plane so that one end on the insertion side of the dielectric region described above is parallel to the inner wall of the plasma processing chamber. The plasma density information measuring probe includes a peripheral surface in which a dielectric region or a covering member that covers the dielectric region is brought into contact with the inner wall of the insertion slot so as to fit (claim 1), or plasma density information is measured In order to do this, one end of the mounting side is configured to be flat so that the above-described dielectric region is in contact with the outer wall of the plasma processing chamber at the mounting portion when mounted in the plasma processing chamber ( Claim 4), or the insertion side of the above-mentioned dielectric region with respect to the inner wall of the plasma processing chamber in the insertion portion when the plasma processing chamber is inserted into the insertion port of the plasma processing chamber to measure plasma density information. The conductive region is inserted into the insertion port so that the plasma density information measurement fitting is fitted to the insertion port when the one end is configured to be parallel to one end of the plasma processing chamber and inserted into the plasma processing chamber. By mounting the plasma density information measuring mounting tool on the peripheral surface in contact with the inner wall (Claim 5), abnormal discharge can be prevented and processes such as plasma density information measurement and plasma processing can be performed stably.

  Embodiment 1 of the present invention will be described below with reference to the drawings.

  FIG. 1 is a block diagram illustrating a schematic configuration of a plasma processing apparatus using the plasma density information measurement probe according to the first embodiment. The first embodiment is an ICP (Inductively Coupled Plasma) type, that is, inductively coupled plasma, and will be described by taking an etching process as an example.

  As shown in FIG. 1, the etching processing apparatus according to the first embodiment includes a chamber 1 in which plasma PM is generated, and the chamber 1 is connected to a processing voltage (not shown). An electrode 2 is provided, and a substrate W as an object to be processed is placed on the electrode 2. By applying a processing voltage to the electrode 2, the substrate W is etched by plasma. A quartz plate 3 and a coil 4 are disposed on the upper portion of the chamber 1. The coil 4 and the generation power source 5 for generating the plasma PM are connected, and a magnetic field is generated from the quartz plate 3 by causing a current to flow from the generation power source 5 to the quartz plate 3 via the coil 4. . A dielectric magnetic field is generated by the magnetic field from the quartz plate 3, and plasma PM is generated by heating. In the first embodiment, the generation power supplied from the generation power supply 5 is a high frequency of about 500 W and a frequency of about 13.56 MHz.

  In the first embodiment, the chamber 1 is provided with an insertion port 1A for inserting a measurement probe 7 described later into the chamber 1 (see FIG. 3A). The insertion port 1A is formed by bending the outer wall 1a and the inner wall 1b of the chamber 1 in a so-called “U” shape and providing the bent portions 1B vertically. The chamber 1 corresponds to the plasma processing chamber in the present invention. The chamber 1 may be formed of a dielectric or a conductor. Alternatively, the dielectric may be formed by coating with a metal.

  Note that the plasma treatment is not limited to plasma etching, and is not particularly limited as long as the treatment is usually performed by plasma, such as plasma CVD or plasma ashing. In addition to the ICP type, the chamber 1 is used for a so-called CCP (Capacitively Coupled Plasma) type in which two electrodes are opposed to each other and generate a plasma between the two electrodes, that is, a non-magnetic field plasma such as capacitively coupled plasma. It may be a chamber or a chamber used for plasma with a magnetic field such as ECR (Electron Cyclotron Resonance) plasma.

  The generation power source 5 is connected to the coil 4 via the generation power control unit 6, and the generation power supplied from the generation power source 5 to the chamber 1 is operated by the generation power control unit 6. . The generation power control unit 6 corresponds to the control means in the present invention.

  In addition to the substrate W and the electrode 2 described above, a measurement probe 7 for measuring plasma density information in the chamber 1 is inserted in the chamber 1. The measurement probe 7 corresponds to a plasma density information measurement probe in the present invention.

  A measurement probe 7 and a measurement power source 8 for measuring plasma density information are connected via a coaxial cable 9 and a probe control unit 10. In the first embodiment, the electron density is measured as the plasma density information. Other plasma density information includes, for example, an ion density, an absorption frequency described later, a plasma surface wave resonance frequency, and the like. The measurement power supply 8 corresponds to the plasma density information measurement power supply in the present invention.

  In addition to the substrate W, the electrode 2 and the measurement probe 7 described above, the chamber 1 and a gas supply source (tank) 11 for supplying a gas for generating the plasma PM are connected to each other via a gas adjustment valve 12. Has been.

  Next, a specific configuration of the generation power control unit 6 will be described. The generation power control unit 6 includes an etching rate conversion unit 13, an etching time conversion unit 14, an etching time setting unit 15, and an impedance matching unit 16. The etching rate conversion unit 13 is configured to convert the electron density measured by the measurement probe 7 and the probe control unit 10 into an etching rate corresponding to the electron density, and the etching time conversion unit 14 is converted. The etching rate is converted to an etching time corresponding to the electron density. The etching time setting unit 15 is configured to set the etching time, and the impedance matching unit 16 adjusts the supply of power for generation to the chamber 1 or when the set etching time elapses. 1 is configured to end the supply of power for generation to 1. In addition, the etching rate used in this specification means the thickness of the film | membrane etched per unit time.

  The etching rate conversion unit 13 and the etching time conversion unit 14 have functions of a calculation unit such as a CPU (central processing unit), and the etching rate and the electron density have a certain correlation in a specific process. Taking advantage of this, the measured electron density multiplied by the coefficient by the arithmetic unit is converted as the etching rate, and the value obtained by dividing the thickness of the film that needs to be etched by the etching rate is converted as the etching time. The In the first embodiment, the etching rate conversion unit 13 and the etching time conversion unit 14 are configured by a calculation unit such as a CPU (central processing unit). However, the storage unit is also provided with a storage unit (not shown). A calibration curve indicating the correlation between the electron density and the etching rate is stored in advance, and the reading is performed from the storage unit according to the measured electron density as needed to derive the etching rate, etching time, etc. May be.

  The etching time setting unit 15 has a timer and a clock function. The timer is reset almost simultaneously with the measurement of the electron density, and the timer starts counting. When the timer is counted by an amount corresponding to the set etching time, the etching time setting unit 15 causes the matching circuit in the impedance matching unit 16 to finish supplying the power for generation to the impedance matching unit 16. To operate. In the first embodiment, the etching time setting unit 15 ends the supply of power for generation to the plasma PM by operating the impedance matching unit 16, but directly to the power source 5 for generation. The etching time setting unit 15 may be configured so that the voltage application or the like is directly ended by operating, or the processing voltage applied to the electrode 2 is directly operated. May be. Further, when the substrate W is continuously processed, when the timer is counted by an amount corresponding to the etching time set by the etching time setting unit 15, the substrate W being processed is taken out from the chamber 1, Next, the substrate W to be processed may be put into the chamber 1.

  When the frequency of the power supply 5 for generation is a frequency on the order of MHz, the impedance matching unit 16 uses a matching circuit that combines inductance and capacitance. Moreover, when the above-mentioned frequency is a frequency of 1 GHz or more, an EH tuner or a stub tuner is used.

  Next, the measurement probe 7 will be described with reference to FIGS. As shown in FIG. 2B (enlarged cutaway view), the measurement probe 7 is formed by processing and molding the distal end portion of the coaxial cable 9, and at the distal end portion, an external insulator 9a of the coaxial cable 9 and It is configured by covering the dielectric member 17 after removing the outer conductor 9b. Further, by removing the outer insulator 9a, the outer conductor 9b, and the center insulator 9c, only the center conductor 9d is provided at the tip of the coaxial cable 9, and the center conductor 9d is transmitted via the coaxial cable 9. It functions as an antenna that radiates the power. Accordingly, the center conductor 9d at the tip corresponds to the antenna in the present invention, the coaxial cable 9 corresponds to the cable in the present invention, and the dielectric member 17 corresponds to the dielectric region in the present invention.

  As shown in FIG. 3, the measurement probe 7 is inserted into the chamber 1. Next, the measurement power is transmitted from the measurement power supply 8. Then, at the absorption frequency of the measurement probe 7, resonance absorption occurs at the tip while holding the dielectric member 17 as a boundary condition. As a result, the electromagnetic wave supplied and transmitted from the measurement power supply 8 is absorbed, so that the reflected power becomes small at the absorption frequency of the measurement probe 7. Further, when the measurement power is absorbed by the plasma PM, the remaining measurement power that is not absorbed is directed to the measurement power supply 8 in the direction opposite to the direction transmitted from the measurement power supply 8 to the plasma PM. Is transmitted. Further, when the measurement power is reflected by the plasma PM, the reflected measurement power is similarly transmitted toward the measurement power supply 8 side. This measurement power corresponds to the plasma density information measurement power in the present invention.

  The shape of the dielectric member 17 is convex. And the front-end | tip 17a of the dielectric material member 17, ie, the one end 17a of the insertion side when the measurement probe 7 is inserted in the chamber 1, as shown in FIG. Specifically, when the measurement probe 7 is inserted into the chamber 1, the distal end 17 a is planar so that one end (tip) 17 a on the insertion side is parallel to the inner wall 1 b of the chamber 1 at the insertion portion. It has become. The dielectric member 17 is provided with an insertion port 17A through which the central conductor 9d as an antenna is inserted.

The dielectric member 17 is made of quartz (SiO ₂ ) having a relative dielectric constant of about 4 in the first embodiment. Examples of the material forming the dielectric member 17 include a fluororesin having a relative dielectric constant of 2, alumina (Al ₂ O ₃ ) having a relative dielectric constant of 10, and zirconia having a relative dielectric constant of 35. (ZrO ₂ ), anisotropic dielectrics, and silicon carbide (SiC) whose relative dielectric constant changes depending on purity but has a relative dielectric constant of about 20, but not particularly limited, In the case of a solid dielectric, considering that it is easy to form the dielectric member 17, it is preferable that the dielectric member 17 is formed of a material having a relative dielectric constant of 2 to 50.

  In addition, as shown in FIG. 2, the measurement probe 7 is fitted into the bent portion 1 </ b> B (see FIG. 3) of the chamber 1 and is fitted into the dielectric member 17 to cover the dielectric member 17. One conductor 18, two second conductors 19 that are in contact with the dielectric member 17 on the opposite side to the insertion side and are fitted to the first conductor 18, the coaxial cable 9 on the insertion side (tip side), and the insertion side And a third conductor 21 having a connector 20 for electrically connecting the coaxial cable 9 on the opposite side to the second conductor 19. The first conductor 18, the second conductor 19, and the third conductor 21 are incorporated with screws or the like not shown. The first conductor 18 corresponds to the covering member in the present invention.

  The first conductor 18 is disposed at a position where the peripheral surface of the first conductor 18 contacts the inner wall of the insertion port 1 </ b> A of the chamber 1 when the measurement probe 7 is inserted into the chamber 1. By arranging in this way, the measurement probe 7 is fitted into the insertion port 1A. Further, when the measurement probe 7 is inserted into the chamber 1, the conductor and the first conductor 18 that are in contact with the outer wall 1 a of the chamber 1 at the insertion portion can be seen.

  The first conductor 18 and the second conductor 19 are made of aluminum (Al). The third conductor is made of stainless steel. The material forming these conductors 18, 19, and 21 is not particularly limited, such as other metals or conductors other than metals (for example, carbon).

  When the measurement probe 7 having such a configuration is inserted into the chamber 1 for measurement as shown in FIG. 3, one end (tip) 17a on the insertion side of the dielectric member 17 and the inner wall 1b of the chamber 1 at the insertion portion are formed. Make sure they are almost flush. Note that it is not necessary to be completely flush, and even if a deviation t occurs as shown in FIG. 3, the deviation t faces the inside of the chamber 1 (a portion in contact with the plasma PM). When the outer diameter of the chamber is r, the inner wall 1b of the chamber 1 and the one end 17a on the insertion side of the dielectric member 17 are within the range from + r to -r with respect to the insertion direction (longitudinal direction of the measurement probe). It does n’t matter. On the contrary, if it is out of the range, it may interfere with the process or cause abnormal discharge. In addition, when the shape of the one end 17a on the insertion side of the dielectric member 17 is an ellipse, the short side is r, and when the shape is a polygon, the shortest distance between opposite sides is r.

  For example, when the outer diameter r of the measurement probe is 10 mm, if the inner wall 1b of the chamber 1 and the one end 17a on the insertion side of the dielectric member 17 are in the range of +10 mm to −10 mm with respect to the insertion direction, the dielectric member It is assumed that one end 17a on the insertion side of 17 and the inner wall 1b of the chamber 1 at the insertion portion are substantially flush with each other.

  Next, a specific configuration of the probe control unit 10 will be described. As shown in FIG. 1, the probe control unit 10 includes a directional coupler 22, an attenuator 23, a filter 24, an absorption frequency deriving unit 25, and an electron density conversion unit 26. A directional coupler 22, an attenuator 23, and a filter 24 are connected to the measurement probe 7 in order from the measurement power supply 8 side via the coaxial cable 9.

  The power supply for measurement 8 is a frequency sweep type, and outputs the power for measurement while automatically sweeping at a frequency in a certain frequency band (for example, from 100 kHz to 2.5 GHz). The measurement power output from the measurement power supply 8 is transmitted to the measurement probe 7 via the directional coupler 22, the attenuator 23, and the filter 24 in this order while being transmitted through the coaxial cable 9. On the other hand, when the measurement power is absorbed or reflected, the reflected power is transmitted in the reverse direction as described above, detected by the directional coupler 22, and sent to the absorption frequency deriving unit 25. The frequency of the measurement power output from the measurement power supply 8 is also sequentially sent to the absorption frequency deriving unit 25.

  The filter 24 functions to remove power and noise mixed in the probe control unit 10. Further, the attenuator 23 functions to adjust the amount of measurement power sent to the measurement probe 7.

  The absorption frequency deriving unit 25 obtains a change in reflectance of the measurement power with respect to frequency based on the frequency of the measurement power and the detected reflection amount of the measurement power. Then, based on the obtained result, an absorption frequency at which strong absorption of the power for measurement occurs due to the electron density is obtained. The specific derivation of the absorption frequency will be described with reference to a flowchart described later.

  The electron density converting unit 26 is configured to convert the electron density based on the absorption frequency obtained by the absorption frequency deriving unit 25. Since the above-described absorption frequency has a certain correlation with the electron density, the electron density can be easily obtained by obtaining the absorption frequency.

  Next, the flow of the etching process in the etching apparatus having the above-described configuration will be described with reference to the flowchart of FIG. Note that at the time of step S1, the switch of the power source 5 for generating plasma is already in the ON state, and the gas has already been supplied from the gas supply source (tank) 11 into the chamber 1, and the plasma PM has already been generated. It shall be. Further, as described above, measurement is performed with the measurement probe 7 inserted into the chamber 1 to a position where the one end (tip) 17a on the insertion side of the dielectric member 17 and the inner wall 1b of the chamber 1 at the insertion portion are substantially flush with each other. Etching process including

  [Step S1] The measurement power supply 8 is turned on. The measurement power is output from the measurement power supply 8 while automatically sweeping the measurement power at a frequency from 100 kHz to 2.5 GHz. Further, the above-described frequencies are sequentially sent to the absorption frequency deriving unit 25 while automatically sweeping. The output measurement power is supplied to the measurement probe 7 via the coaxial cable 9. This step S1 corresponds to the process (a) in the present invention.

  [Step S2] The supplied measurement power is absorbed or reflected by the surface wave depending on the plasma PM, and the measurement power supply is reflected by the reflected amount of the measurement power via the coaxial cable 9 in the opposite direction to that at the time of supply. 8 is transmitted. The reflection amount of the measurement power is detected by the directional coupler 22 via the filter 24, the attenuator 23, and the directional coupler 22 in this order. Then, it is sent to the absorption frequency deriving unit 25.

  In the absorption frequency deriving unit 25, a calculation of [detected reflection amount of measurement power] / [total output amount of measurement power] is performed at the same frequency to obtain the reflectance of the measurement power. By plotting the swept frequency and the reflectance of the measurement power in association with each other, a change in the reflectance of the measurement power with respect to frequency as shown in FIG. 5 is obtained. As shown in FIG. 5, the place where the reflectivity greatly decreases is an absorption point where strong absorption of the measured power occurs due to the electron density, and the frequency of the absorption point is the absorption frequency.

  In FIG. 5, two absorption points Pa and Pb appear. Usually, a plurality of absorption points appear, and accordingly, there are as many absorption frequencies as there are absorption points. Any of these absorption frequencies has a certain correlation with plasma density information such as electron density. In particular, among absorption frequencies, the absorption frequency proportional to the square of the electron density is plasma surface wave resonance. It is called frequency. This plasma surface wave resonance frequency is one of useful physical quantities in deriving plasma density information such as electron density. This step S2 corresponds to the process (b) in the present invention.

  In the present specification, the absorption frequency at the absorption point having the largest Q value (quality factor) is referred to as “zero-order absorption frequency” or “basic absorption frequency”. Then, the absorption frequency is defined as primary, secondary,... In descending order of absorption. The absorption frequency at the highest order, that is, the absorption point at the absorption point with the smallest absorption is the above-described plasma surface wave resonance frequency that is proportional to the square of the electron density.

  Therefore, in order to actually measure the plasma density information, the absorption with a large Q value is an absorption with a large absorption (loss due to reflection) and a narrow half-value width. It is usual to measure the next absorption frequency (basic absorption frequency). In the first embodiment, the zero-order absorption frequency, that is, the fundamental absorption frequency (the zero-order absorption frequency) at the absorption point having the largest Q value is measured.

  [Step S3] The absorption frequency derived by the absorption frequency deriving unit 25 is sent to the electron density conversion unit 26. The electron density conversion unit 26 obtains a plasma surface wave resonance frequency from the fundamental absorption frequency, and further converts the plasma surface wave resonance frequency into an electron density.

  In the case of measuring in the form shown in FIG. 3, since the measurement probe 7 protrudes from the inner wall 1b of the chamber 1 by the amount of deviation t, the electron density obtained here is the deviation t from the inner wall 1b. Value. Since the substrate W is disposed at the center of the chamber 1, the electron density at the center of the chamber 1 must be obtained. Therefore, as described in the section “Problems to be Solved by the Invention”, the plasma density information (here, the electron density) at the position of the deviation t from the inner wall 1b and the plasma density information (here, the center of the chamber 1). The electron density at the center of the chamber 1 may be calibrated from the electron density at the position of the deviation t from the inner wall 1b based on the graph of FIG. In the first embodiment, the electron density conversion unit 26 also has this calibration function, but a calibration unit that stores the graph of FIG. 6 and performs calibration may be provided separately.

  For the graph of FIG. 6, the electron density is measured by changing the arrangement positions of the measurement probes, and the correlation is obtained in advance. In the graph of FIG. 6, argon (Ar) is used as the gas for generating the plasma PM, and the gas pressures are 4 Pa, 5 Pa, and 6 Pa, respectively. Assuming that the (arrangement) position of the measurement probe 7 is T, when the position T is 200 mm, the measurement probe 7 is disposed at the center of the chamber 1, and when the position T is 0 mm, the probe is applied to the inner wall 1 b of the chamber 1. It becomes when it is arranged.

  [Step S4] After the electron density is obtained, the substrate W is put into the chamber 1 and placed on the electrode 2. By applying a processing voltage to the electrode 2, ions and electrons in the plasma PM reach the surface of the substrate W, and the substrate W is etched. Therefore, almost simultaneously with the application of the processing voltage or almost simultaneously with the start of the etching process, the etching time setting unit 15 resets the timer and starts counting the timer. In terms of performing the etching process more precisely, it is preferable that the introduction of the substrate W into the chamber 1 and the measurement of the electron density in step S4 are performed almost simultaneously.

  [Step S5] On the other hand, the measured electron density is sent to the etching rate conversion unit 13 in the generation power control unit 6 and converted into an etching rate based on the electron density. As described above, since there is a certain correlation between the etching rate and the electron density, the etching rate can be obtained only by multiplying the measured electron density by a coefficient.

  [Step S6] When the etching rate is determined, the etching time conversion unit 14 determines the etching time. For example, when the thickness of the film thickness to be etched is 10 μm and the etching rate is 1 μm / min, the etching time is obtained as 10 min divided by 10 μm of the above film thickness by 1 μm / min of the above etching rate. It is done.

  [Step S7] When the etching time is obtained, it is sent to the etching time setting unit 15. When the timer started in step S4 is counted by an amount corresponding to the etching time, that is, when the etching time has elapsed, the etching time setting unit 15 ends the supply of power for generation to the impedance matching unit 16. The matching circuit in the impedance matching unit 16 is operated. By this operation, the generation power supplied from the generation power supply 5 becomes 0, and the etching process is completed. Steps S4 to S7 correspond to the process (c) in the present invention.

  When the measurement power is supplied from the measurement power supply 8 to the plasma PM in step S1 from the above steps S1 to S7, the measurement power incident from the measurement power supply 8 is caused by the plasma density via the measurement probe 7. Then it is absorbed by the plasma load or reflected back. In step S2, the absorption frequency, which is plasma density information, is measured using the measurement probe 7 based on the reflection or absorption of the measurement power. Since the plasma density information indicates the characteristics of the plasma, the plasma etching process is controlled in steps S4 to S7 by measuring the plasma density information.

  The measurement probe 7 used in the etching method of the first embodiment is configured as follows. That is, when the measurement probe 7 is inserted into the chamber 1 in order to measure plasma density information, one end (tip) 17a on the insertion side of the dielectric member 17 is parallel to the inner wall 1b of the chamber 1 in the insertion portion. The one end 17a is formed in a flat shape so that the first conductor 18 that covers the dielectric member 17 is inserted into the insertion port 1A so that the measurement probe 7 is fitted into the insertion port 1A when inserted into the chamber 1. The measurement probe 7 includes a peripheral surface brought into contact with the inner wall 1b of 1A.

  With this configuration, when the measurement probe 7 is inserted into the chamber 1, the insertion port 1 </ b> A is blocked by the peripheral surface (surface) of the first conductor 18 that covers the dielectric member 17 of the measurement probe 7. . That is, there is no gap near the insertion port 1A. Therefore, the electric field in the chamber 1 does not flow to the outer wall 1a of the chamber 1 through the insertion port 1A, and abnormal discharge can be eliminated. In addition, one end 17a on the insertion side of the dielectric member 17 is formed in a planar shape so as to be parallel to the inner wall 1b of the chamber 1 in the insertion portion, and the one end 17a on the insertion side of the dielectric member 17 and the insertion portion When the measurement probe 7 is inserted into the chamber 1 up to a position where the inner wall 1b of the chamber 1 is substantially flush with the inner wall 1b of the chamber 1, the measurement probe 7 does not protrude from the inner wall 1b of the chamber 1, and plasma density information measurement or plasma It does not interfere with processes such as processing. As described above, abnormal discharge can be prevented and the process can be performed stably.

  In the first embodiment, by forming the first conductor 18 covering the dielectric member 17 with a conductor, it is possible to shield the plasma surface wave and perform the process more stably. The first conductor 18 can be regarded as a conductor that contacts the outer wall 1a of the chamber 1 at the insertion portion when the measurement probe 7 is inserted into the chamber 1. By providing such a conductor, it is possible to shield the plasma surface wave from the outer wall 1b of the chamber 1 in the insertion portion and perform the process more stably.

  In addition, the square distribution of the electric field intensity around the probe when the conventional measurement probe 101 and the measurement probe 7 in the first embodiment were respectively inserted into the chamber 1 was confirmed by simulation. This simulation is performed using the FDTD method (Finite Difference Time Domain Method) that obtains the time response of the output point by differentiating Maxwell's equations in time and space. FIG. 7 is a diagram schematically showing the square distribution of the electric field strength when the conventional measurement probe 101 is used, and FIG. 8 is the electric field strength when the measurement probe 7 in Example 1 is used. It is the figure which represented typically square distribution.

  As shown in FIG. 7, when a conventional measurement / measurement probe 101 is inserted into the chamber 1, an electromagnetic wave excites a surface wave at the interface between the dielectric and plasma on the surface of the measurement probe 101 and propagates in the longitudinal direction which is the coaxial direction. To do. The propagated surface wave is reflected at both ends of the coaxial, excites a strong standing wave, forms a node, an abdomen, and a node with the length of the region at the tip of the probe, and it can be seen from FIG. . As shown in FIG. 7A, when the conventional measurement probe 101 is inserted to the vicinity of the center of the chamber 1, it is distributed in the length of the region of the measurement probe 101 in the chamber 1, but as shown in FIG. As described above, when the conventional measurement probe 101 is inserted in the vicinity of the entrance of the chamber 1 (for example, in front of an object to be processed such as a substrate), it is distributed in the chamber 1 only to the length near the entrance. When the measurement probe 1 according to the first embodiment is inserted into the chamber 1, it can be seen from FIG. 8 that resonance is absorbed at one end 17 a on the insertion side of the dielectric member 17. Therefore, even if the measurement probe 7 is inserted into the chamber 1 so that the one end 17a on the insertion side of the dielectric member 17 and the inner wall 1b of the chamber 1 at the insertion portion are substantially flush with each other, the diameter of the probe can be increased. The surface area of the excited surface wave can be increased.

  Next, Embodiment 2 of the present invention will be described with reference to the drawings.

  FIG. 9 is a block diagram illustrating a schematic configuration of a plasma processing apparatus using the plasma density information measurement wearing tool (measurement attachment) according to the second embodiment. In the second embodiment, the same reference numerals are given to the same components as those in the first embodiment, and the description thereof is omitted.

  The etching processing apparatus according to the second embodiment includes a chamber 1 as shown in FIG. As shown in FIG. 10, the chamber 1 according to the second embodiment has the same configuration as that of the first embodiment except that the chamber 1 includes an observation window 30 for confirming the inside of the chamber 1. The observation window 30 is made of transparent or translucent quartz. Further, the chamber 1 in the second embodiment is not provided with the insertion port 1A or the bent portion 1B as in the first embodiment.

  Electrode 2 in chamber 1, quartz plate 3 around coil 1, coil 4, generation power supply 5, generation power control unit 6, measurement power supply 8, coaxial cable 9, probe control unit 10, gas supply source 11, The gas adjustment valve 12 has the same configuration as that of the first embodiment.

  Instead of the measurement probe 7 of the first embodiment, the measurement attachment 31 for measuring plasma density information is attached to the chamber 1 by contacting the measurement attachment 31 for measuring plasma density information in the second embodiment. The measurement attachment 31 corresponds to the plasma density information measurement wearing tool in the present invention.

  Next, the measurement attachment 31 will be described with reference to FIG. The measurement attachment 31 includes an antenna 32 formed of a central conductor of a coaxial cable, a connector 33 that electrically connects the coaxial cable 9 and the antenna 32, a dielectric member 34 that covers the antenna 32 and is coupled to plasma, and a dielectric. And a conductor member 35 that covers the body member 34. The dielectric member 34 corresponds to a dielectric region in the present invention, and the conductor member 35 corresponds to a conductive region in the present invention. As for the conductor member 35, the material forming it is not particularly limited, such as metal and a conductor other than metal (for example, carbon). As shown in FIG. 11B, the dielectric member 34 and the conductor member 35 have a cylindrical shape, and the portion of the bottom surface of the cylinder as viewed from FIG. 11B becomes one end on the mounting side. By forming the cylindrical member in a cylindrical shape, one end 34a on the mounting side of the dielectric member 34 is flat, and when the measurement attachment 31 is mounted on the chamber 1, the outer wall 1a of the chamber 1 at the mounting portion, that is, the present embodiment. In Example 2, the dielectric member 34 comes into contact with the outer wall of the observation window 30.

  The etching process according to the second embodiment is the same as the etching process according to the first embodiment shown in FIG. 4. In the first embodiment, the measurement probe 7 is inserted into the chamber 1 to measure the plasma density information. In the second embodiment, the only difference is that the measurement attachment 31 is attached to the observation window 30 of the chamber 1 and the connector 33 of the measurement attachment 31 and the coaxial cable 9 are electrically connected. Note that step S1 in the second embodiment corresponds to the process (A) in the present invention, and step S2 in the second embodiment corresponds to the process (B) in the present invention. Steps S4 to S7 are equivalent to the process (C) in the present invention.

  When the measurement power is supplied from the measurement power supply 8 to the plasma PM in step S1 from the above steps S1 to S7, the measurement power incident from the measurement power supply 8 causes the measurement attachment 31 to enter the observation window 30 of the chamber 1. When it is mounted, it is absorbed by the plasma load or reflected back through the measurement attachment 31 due to the plasma density. In step S2, the absorption frequency, which is plasma density information, is measured using the measurement attachment 31 based on the reflection or absorption of the measurement power. Since the plasma density information indicates the characteristics of the plasma, the plasma etching process is controlled in steps S4 to S7 by measuring the plasma density information.

  The measurement attachment 31 used in the etching method in the second embodiment is configured as follows. That is, when the measurement attachment 31 is attached to the chamber 1 in order to measure plasma density information, the dielectric member 34 is in contact with the outer wall 1a of the chamber 1 (here, the outer wall of the observation window 30) in the attachment portion. The one end 34a on the mounting side is formed in a planar shape. In Example 2, the dielectric member 34 and the conductor member 35 are formed in a cylindrical shape, so that the one end 34a on the mounting side is configured to be planar.

  With this configuration, when the measurement attachment 31 is attached to the chamber 1, the dielectric member is formed through the outer wall of the observation window 30 formed of a dielectric material (quartz in the second embodiment) in the attachment portion. A plasma surface wave is excited in 34, and the measurement power supplied from the measurement power supply 8 is coupled to the plasma via the dielectric member 34, thereby causing absorption or reflection by the plasma load.

  As described above, since the measurement attachment 31 is simply mounted on the chamber 1, the process can be stably performed without any change in the chamber 1. Further, since the dielectric member 34 is covered with the conductor member 35, the plasma surface wave can be shielded and the process can be performed more stably. Further, since the process can be performed simply by mounting the measurement attachment 31 of the second embodiment in the chamber 1 (having the observation window 30) in the chamber 1, the measurement attachment 31 having a high versatility and the present embodiment. 2 can be realized.

  Next, Embodiment 3 of the present invention will be described with reference to the drawings.

  FIG. 12 is a block diagram illustrating a schematic configuration of a plasma processing apparatus using the measurement attachment according to the third embodiment. In the third embodiment, the same reference numerals are given to the same components as those in the first and second embodiments, and the description thereof is omitted.

  The etching processing apparatus according to the third embodiment includes a chamber 1 as shown in FIG. As shown in FIG. 13, the chamber 1 in the third embodiment has a conventionally provided insertion port 1 </ b> C (for example, a gas pipe for supplying a gas for generating plasma PM). Plasma density information is measured by using the opening 1C as an insertion opening into which the measurement attachment 41 is inserted. Therefore, the chamber 1 in the third embodiment can use the insertion port 1 </ b> C provided conventionally without providing the bent portion 1 </ b> B as in the first embodiment. The measurement attachment 41 corresponds to the plasma density information measurement wearing tool in the present invention.

  Electrode 2 in chamber 1, quartz plate 3 around coil 1, coil 4, generation power supply 5, generation power control unit 6, measurement power supply 8, coaxial cable 9, probe control unit 10, gas supply source 11, The gas adjustment valve 12 has the same configuration as in the first and second embodiments.

  Next, the measurement attachment 41 will be described with reference to FIG. Similar to the measurement attachment 31 of the second embodiment, the measurement attachment 41 includes an antenna 42, a connector 43, a dielectric member 44 that covers the antenna 42, and a conductor member 45 that covers the dielectric member 44. . The dielectric member 44 corresponds to a dielectric region in the present invention, and the conductor member 45 corresponds to a conductive region in the present invention. The conductor member 45 is not particularly limited, as in the first and second embodiments, such as a metal or a conductor other than metal (for example, carbon). The dielectric member 44 and the conductor member 45 are cylindrical as in the second embodiment. Also in the third embodiment, the one end 44a on the insertion side of the dielectric member 44 has a planar shape by being formed in a cylindrical shape, and when the measurement attachment 41 is inserted into the insertion port 1C of the chamber 1 and attached, One end 44a on the insertion side is parallel to the inner wall 1b of the chamber 1 in the insertion portion.

  Further, the conductor member 45 is a cylinder having a size of a peripheral surface that comes into contact with the inner wall of the insertion port 1 </ b> C of the chamber 1 when the measurement attachment 41 is inserted into the chamber 1 and attached. By having such a size, the measurement attachment 41 is fitted into the insertion port 1C when inserted into the chamber 1 and mounted.

  The etching process according to the third embodiment is the same as the etching process according to the first embodiment shown in FIG. 4. In the first embodiment, the measurement probe 7 is inserted into the chamber 1 to measure the plasma density information. In the third embodiment, the measurement attachment 41 is inserted into the insertion port 1C of the chamber 1 and attached, and the connector 43 of the measurement attachment 41 and the coaxial cable 9 are electrically connected. In the second embodiment, the measurement attachment 31 is attached while being brought into contact with the outer wall 1a of the chamber 1. However, in the third embodiment, the measurement attachment 41 is attached by being inserted into the insertion port 1C of the chamber 1. Note that step S1 in the third embodiment corresponds to the process (A) in the present invention, and step S2 in the third embodiment corresponds to the process (B) in the present invention. Steps S4 to S7 are equivalent to the process (C) in the present invention.

  When the measurement power is supplied from the measurement power supply 8 to the plasma PM in step S1 from the above steps S1 to S7, the measurement power incident from the measurement power supply 8 causes the measurement attachment 41 to enter the insertion port 1C of the chamber 1. When inserted and mounted, it is absorbed by the plasma load or reflected back through the measurement attachment 41 due to the plasma density. In step S2, the absorption frequency, which is plasma density information, is measured using the measurement attachment 41 based on the reflection or absorption of the measurement power. Since the plasma density information indicates the characteristics of the plasma, the plasma etching process is controlled in steps S4 to S7 by measuring the plasma density information.

  A measurement attachment 41 used in the etching method in the third embodiment is configured as follows. That is, when the measurement attachment 41 is inserted and attached to the insertion port 1C of the chamber 1 in order to measure the plasma density information, the insertion side of the dielectric member 44 with respect to the inner wall 1b of the chamber 1 at the insertion portion. The one end 44a on the insertion side is formed in a flat shape so that the one end 44a is parallel, and when inserted into the chamber 1, the conductor member 45 is inserted into the insertion port 1C so that the measurement attachment 41 fits into the insertion port 1C. The measurement attachment 41 includes a peripheral surface that is in contact with the inner wall. In the third embodiment, the dielectric member 44 and the conductor member 45 are formed in a cylindrical shape so that the one end 44a on the mounting side is formed in a flat shape, and the peripheral surface in which the conductor member 45 is brought into contact with the inner wall of the insertion port 1C. The measurement attachment 41 is provided.

  With this configuration, when the measurement attachment 41 is inserted into the chamber 1 and attached, the plasma surface wave is excited on the dielectric member 44 of the measurement attachment 41 inserted into the chamber 1, and the measurement power supply The measurement power supplied from 8 is coupled to the plasma via its dielectric member 44, thereby causing absorption or reflection by the plasma load. Further, at the time of mounting, the insertion port 1A is closed by the peripheral surface (surface) of the conductor member 45, and there is no gap near the insertion port 1C.

  As described above, since the measurement attachment 41 is simply inserted into the insertion port 1C of the chamber 1 and attached, the electric field in the chamber 1 does not flow to the outer wall 1a of the chamber 1 through the insertion port 1C, and the process can be performed stably. Can do. Further, one end 44a on the insertion side of the dielectric member 44 is formed in a planar shape so as to be parallel to the inner wall 1b of the chamber 1 in the insertion portion, and the one end 44a on the insertion side of the dielectric member 44 is connected to the insertion portion. When the measurement attachment 41 is inserted into the chamber 1 and mounted to a position where the inner wall 1b of the chamber 1 is substantially flush with the inner wall 1b of the chamber 1, the measurement attachment 41 does not protrude from the inner wall 1b of the chamber 1 and interferes with the process. Don't be. In addition, since the dielectric member 44 is covered with the conductor member 45, the plasma surface wave can be shielded and the process can be performed more stably. Further, the process can be performed simply by inserting the measurement attachment 41 of the third embodiment into the conventional chamber 1 and inserting the measurement attachment 41 into the conventional insertion port 1C (the gas pipe in the third embodiment). The high measurement attachment 41 and the etching processing apparatus according to the third embodiment can be realized.

  Also in the third embodiment, the substantially same plane is the same range as that of the first embodiment (range from + r to -r). In the case where the conventionally provided insertion port does not exist in the chamber 1 or the insertion port is already used for another application such as a gas pipe for supplying gas, the insertion port may be provided in the chamber 1. Good. The process can be performed simply by providing an insertion port in the chamber 1 and inserting the measurement attachment 41 into the insertion port of the chamber 1.

  The present invention is not limited to the above embodiment, and can be modified as follows.

  (1) In steps S1 to S7 in each of the above-described embodiments, the generation power supplied from the generation power supply 5 is set to 0 when the etching process for one substrate W is completed. In the case of continuous processing, when the etching time is reached, the procedure may be such that one substrate W being processed is taken out of the chamber and the substrate W to be processed next is put into the chamber 1. .

  (2) In each of the above-described embodiments, the plasma processing is the etching processing. However, the processing is performed on an object to be processed in plasma such as CVD (chemical vapor deposition), ashing, or chamber cleaning. If it is a plasma process, it will not specifically limit. Further, the present invention can be applied not only to plasma processing but also to a plasma density information measuring apparatus that simply measures plasma density information.

  (3) In each of the above-described embodiments, the plasma processing is controlled by operating the generation power for generating plasma. For example, in addition to the generation power, the gas pressure for generating plasma, the gas mixture ratio, etc. The plasma processing may be controlled by operating the above, and there is no particular limitation as long as it is a method used in normal plasma control.

  In each embodiment, the processing time such as the etching time is set according to the electron density and the generation power is operated. However, by operating the impedance matching unit 18 and the like while the processing time is fixed. The power for generation may be adjusted, and the electron density may be controlled according to the processing time. In the same manner, the gas pressure, the gas mixture ratio, and the like are adjusted by the gas adjustment valve 12 in FIG. The electron density may be controlled according to the processing time. In addition, these methods described above can be appropriately combined with each other.

  (4) In each of the above-described embodiments, the plasma density information is the absorption frequency and the electron density. However, since the ion density also shows the characteristics of the plasma, it is related to plasma generation by calibrating and measuring these physical quantities. Physical quantities (for example, power for generation, gas pressure, gas mixture ratio, etc.) may be manipulated. For example, after the absorption frequency is obtained by the absorption frequency deriving unit 25 in FIG. 1, the generation power may be manipulated according to the correlation between the absorption frequency and the etching process.

  (5) The first conductor 18, the second conductor 19, and the third conductor 21 in each of the embodiments described above may be formed by laminating each conductor, or by vapor deposition or the like. A technique of forming by coating may be used.

(6) In the measurement probe 7 according to the first embodiment described above, when the measurement probe 7 is inserted into the chamber 1 in order to shield the plasma surface wave, it contacts the outer wall 1a of the chamber 1 at the insertion portion, and is dielectric. The first conductor 18 that covers the body member 17 and whose peripheral surface is in contact with the inner wall of the insertion port 1A of the chamber 1 is provided. For example, the first conductor 18 is connected to the chamber 1 as shown in FIG. When inserted, the dielectric member 17 may be configured so as to be in contact with the outer wall 1a of the chamber 1 in the insertion portion and the peripheral surface is in contact with the inner wall of the insertion port 1A. That is, the measurement probe 7 may not include a covering member that covers the dielectric member 17. Further, for example, as shown in FIG. 15, the first conductor 18 is configured so as to cover the dielectric member 17 so that the peripheral surface contacts the inner wall of the insertion port 1 </ b> A of the chamber 1, and the outer wall 1 a of the chamber 1 in the insertion portion. It is not necessary to provide the conductor which contacts. Further, as shown in FIG. 16, the first conductor 18 respectively organized into the individual conductors 18 ₁ and the conductor 18 _2, one of the conductors 18 ₁ to contact the outer wall 1a of the chamber 1 in the insertion portion In addition, the other conductor 18 ₂ may be configured such that the dielectric member 17 is covered and the peripheral surface is in contact with the inner wall of the insertion port 1A of the chamber 1.

  The first conductor 18 is not necessarily provided. However, in order to shield the plasma surface wave, it is more preferable to provide in any region as shown in FIGS. 1 and 14 to 16.

  (7) In the measurement probe 7 of Example 1 described above, as shown in FIG. 2, the dielectric region coupled to the plasma PM is the dielectric member 17, and the rear end of the dielectric member 17 (the side opposite to the insertion side) 1), a gap is interposed between the coaxial cable 9 and the measurement attachment filled with the dielectric member 17 as shown in FIG. 11 of the second embodiment and FIG. 13 of the third embodiment. The measurement probe 7 may be configured like 31 and 41. That is, the dielectric member 17 may be covered and filled together with the coaxial cable 9 as shown in FIG.

  Conversely, the measurement attachments 31 and 41 may be configured like the measurement probe 7 in which a gap is interposed. For example, the measurement attachment 31 of the second embodiment may be configured with a gap interposed between the rear end portion of the dielectric member 34 and the conductor member 35 as shown in FIG. What is necessary is just to comprise similarly about the measurement attachment 41 of Example 3. FIG.

  (8) In the measurement attachment 31 of Example 2 described above, the dielectric member 34 is formed in a cylindrical shape, so that the dielectric member 34 comes into contact with the outer wall 1a of the chamber 1 in the mounting portion at the time of mounting. Although the one end 34a is configured in a planar shape, if the dielectric member 34 is in contact with the outer wall 1a of the chamber 1 in the mounting portion by configuring the one end 34a on the mounting side in a planar shape, the rear end portion of the measurement attachment 31 The shape is not particularly limited. For example, the rear end portion may have a shape as shown in FIGS.

  (9) In the measurement attachment 41 of Example 3 described above, the dielectric member 44 is formed in a cylindrical shape, so that when inserted into the insertion port 1C of the chamber 1 and mounted, the inner wall of the chamber 1 at the insertion portion. One end 44a is formed in a flat shape so that one end 44a on the insertion side of the dielectric member 44 is parallel to 1b, and the conductor member 45 is fitted so that the measurement attachment 41 is fitted to the insertion port 1C during insertion. The measurement attachment 41 has a peripheral surface in which the one end 44a on the insertion side is formed in a flat shape and the conductor member 45 is in contact with the inner wall of the insertion port 1C. In this case, the shape of the rear end portion of the measurement attachment 41 is not particularly limited as in the modification (8) described above. For example, the rear end portion may have a shape as shown in FIGS.

  (10) The outer wall 1a and the inner wall 1b where the measurement probe 7 is to be inserted into the chamber 1 (plasma processing chamber) of each embodiment described above or where the measurement attachments 31 and 41 are to be mounted are shown in FIGS. 3, 9, and FIGS. 11 to 13 (left side as viewed from the drawing), the measurement probe 7 is inserted into the outer wall 1 a and the inner wall 1 b of the bottom surface of the chamber 1 or measurement attachments 31, 41. May be attached, the measurement probe 7 may be inserted into the outer wall 1a and the inner wall 1b of the upper surface (ceiling) of the chamber 1, or the measurement attachments 31, 41 may be attached, or the right side of the chamber 1 (for example, in FIG. 1). The measurement probe 7 may be inserted or the measurement attachments 31, 41 may be attached to the outer wall 1a and the inner wall 1b of the gas pipe communicating with the gas adjusting valve 12). It should be noted that generation power such as the quartz plate 3 and the coil 4 may be directly input to the upper surface (ceiling) side of the chamber 1 to affect the measurement probe 7 and the measurement attachments 31 and 41. It is more preferable to insert the measurement probe 7 or attach the measurement attachments 31 and 41 to the outer wall 1a and the inner wall 1b other than the upper surface.

  Further, as shown in FIG. 25 and FIG. 26, the portion of the electrode 2 to which a processing voltage for performing plasma processing is applied can be regarded as “the wall of the chamber 1”. In this case, the side on which the substrate W is placed is the inner wall 2b of the electrode 2, and the opposite side is the outer wall 2a of the electrode 2, and the measurement probe 7 is inserted through the insertion port 2A provided in the electrode 2 as shown in FIG. 26 may be inserted, or as shown in FIG. 26, the measurement attachment 41 may be inserted and attached via the insertion port 2C provided in the electrode 2.

  Further, as shown in FIGS. 27 and 28, when a stage S formed of a dielectric material, for example, is provided on the electrode 2 and the substrate W is placed on the stage S, the stage S is placed on the portion of the stage S. Can be regarded as “wall of chamber 1”. In this case, the side on which the substrate W is placed is the inner wall Sb of the stage S, the opposite side is the outer wall Sa of the stage S, and the insertion openings 2A and SA provided in the electrode 2 and the stage S are provided as shown in FIG. As shown in FIG. 28, the measurement probe 7 may be inserted, and the measurement attachment 41 may be inserted and attached via the insertion openings 2C and SC provided in the electrode 2 and the stage S, as shown in FIG.

It is the block diagram which showed schematic structure of the plasma processing apparatus of Example 1. FIG. (A) is a side view which shows the structure of the measurement probe of Example 1, (b) is the fracture | rupture figure which expanded a part of (a). (A) is a side sectional view of the measurement probe before being inserted into the chamber, and (b) is a side sectional view of the measurement probe after being inserted into the chamber. It is a flowchart figure which shows the flow of the etching process of Examples 1-3. It is a graph with which it uses for description which calculates | requires an absorption frequency. It is a graph which shows the measurement result of an electron density when the arrangement | positioning position of a measurement probe is each changed. It is the figure which represented the square distribution of the electric field strength at the time of using the conventional measurement probe, Comprising: When (a) is inserted to the center vicinity of a chamber, (b) is inserted near the entrance of a chamber. FIG. It is the figure which represented typically the square distribution of the electric field strength at the time of using the measurement probe of Example 1. FIG. It is the block diagram which showed schematic structure of the plasma processing apparatus of Example 2. FIG. It is the schematic of the observation window vicinity of the chamber of Example 2. FIG. (A) is a sectional side view of the measurement attachment of Example 2, (b) is the schematic of the whole attachment. It is the block diagram which showed schematic structure of the plasma processing apparatus of Example 3. FIG. (A) is a side sectional view of the measurement attachment before being inserted into the chamber, and (b) is a side sectional view of the measurement attachment after being inserted into the chamber. 6 is a side cross-sectional view illustrating a configuration of a measurement probe according to a modification of Example 1. FIG. 6 is a side sectional view showing a configuration of a measurement probe according to a further modification of Example 1. FIG. 6 is a side sectional view showing a configuration of a measurement probe according to a further modification of Example 1. FIG. 6 is a side sectional view showing a configuration of a measurement probe according to a further modification of Example 1. FIG. FIG. 10 is a side cross-sectional view illustrating a configuration of a measurement attachment according to a modification of Example 2. FIG. 12 is a side cross-sectional view showing a configuration of a measurement attachment according to a further modification of Example 2. FIG. 12 is a side cross-sectional view showing a configuration of a measurement attachment according to a further modification of Example 2. FIG. 12 is a side cross-sectional view showing a configuration of a measurement attachment according to a further modification of Example 2. FIG. 10 is a side cross-sectional view illustrating a configuration of a measurement attachment according to a modification example of Example 3. FIG. 10 is a side sectional view showing a configuration of a measurement attachment according to a further modification of Example 3. FIG. 10 is a side sectional view showing a configuration of a measurement attachment according to a further modification of Example 3. 6 is a schematic diagram of a measurement form according to a modification of Example 1. FIG. 10 is a schematic view of a measurement form according to a modification of Example 3. FIG. 6 is a schematic diagram of a measurement configuration according to a further modification of Example 1. FIG. 10 is a schematic diagram of a measurement configuration according to a further modification of Example 3. FIG. It is a figure where it uses for description of the conventional method for measuring plasma density information. It is a figure where it uses for description of the conventional method for measuring plasma density information. It is a side view of the conventional measurement probe and guide part. Using a conventional measurement probe, (a) is a diagram schematically showing the distribution of the electric field when measured by inserting it on the workpiece side from the inner wall of the chamber and on the near side of the workpiece. FIG. 4B is a diagram schematically showing the distribution of the electric field when measured closer to the front wall than the outer wall of the chamber.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Chamber 6 ... Generation | occurrence | production electric power control part 7 ... Measurement probe 8 ... Power supply for measurement 9d ... Center conductor 9 ... Coaxial cable 17 ... Dielectric material 18 ... First conductor 31, 41 ... Measurement attachment PM ... Plasma W ... Substrate

Claims (21)

  Plasma density information for measuring plasma density information based on reflection or absorption of plasma density information measurement power supplied to the plasma from a plasma density information measurement power source for measuring plasma density information indicating the characteristics of the plasma. A measurement probe comprising an antenna for radiating electric power, a cable for transmitting the electric power for measuring plasma density information, and a dielectric region coupled to plasma, and measuring plasma density information for measuring plasma density information When the probe is inserted into the plasma processing chamber, one end is formed in a planar shape so that one end on the insertion side of the dielectric region is parallel to the inner wall of the plasma processing chamber in the insertion portion. When inserted into the processing chamber, the dielectric area is set so that the probe for plasma density information measurement fits into the insertion port. Alternatively the plasma density information measuring probe, characterized in that the plasma density information measuring probe to the peripheral surface in contact with the inner wall of the covering member insertion opening which covers the dielectric region comprises.   2. The plasma density information measuring probe according to claim 1, wherein the covering member is made of a conductor.   The probe for measuring plasma density information according to claim 1 or 2, further comprising a conductor that contacts an outer wall of the plasma processing chamber at the insertion portion when the probe for measuring plasma density information is inserted into the plasma processing chamber. A probe for measuring plasma density information.   Plasma density information for measuring plasma density information based on reflection or absorption of plasma density information measurement power supplied to the plasma from a plasma density information measurement power source for measuring plasma density information indicating the characteristics of the plasma. A measurement mounting tool, an antenna that radiates power, a cable that transmits the plasma density information measurement power, a connector that electrically connects the antenna, and a dielectric that covers the antenna and is coupled to plasma When the plasma processing chamber is mounted to measure plasma density information, the dielectric region contacts the outer wall of the plasma processing chamber at the mounting portion. A mounting tool for measuring plasma density information, characterized in that one end of the mounting side is configured to be flat.   A plasma density information measurement mounting tool for measuring plasma density information based on reflection or absorption of a plasma density information measurement power supplied to a plasma from a plasma density information measurement power source for measuring plasma density information based on a plasma load. An antenna that radiates power, a cable that transmits the power for measuring plasma density information, a connector that electrically connects the antenna, a dielectric region that covers the antenna and is coupled to plasma, and a dielectric A conductive region covering the conductive region, and when the dielectric region is inserted into the insertion port of the plasma processing chamber to measure plasma density information, the dielectric is applied to the inner wall of the plasma processing chamber at the insertion portion. When one end is configured to be flat so that one end on the insertion side of the active region is parallel, and inserted into the plasma processing chamber The plasma density information measuring mounting tool includes a peripheral surface in which the conductive region is brought into contact with the inner wall of the insertion port so that the plasma density information measuring mounting tool is fitted into the insertion port. Measuring equipment.   A plasma density information measuring method for measuring plasma density information indicating characteristics of plasma, wherein (a) plasma density information measuring power is supplied to the plasma from a plasma density information measuring power source for measuring the plasma density information. And (b) plasma density information is measured based on reflection or absorption of the plasma density information measurement power by a plasma load, using a plasma density information measurement probe which is a probe for measuring plasma density information. The plasma density information measuring probe includes an antenna that radiates power, a cable that transmits the power for measuring plasma density information, and a dielectric region that couples to plasma, and measures plasma density information. Therefore, when the probe for measuring plasma density information is inserted into the plasma processing chamber, One end of the dielectric region is configured to be flat with respect to the inner wall of the plasma processing chamber in the portion, and when inserted into the plasma processing chamber, the plasma density is inserted into the insertion port. The plasma density information measurement probe includes a peripheral surface in which a dielectric region or a covering member that covers the dielectric region is brought into contact with the inner wall of the insertion port so that the information measurement probe is fitted, During the process, the measurement is performed with the plasma density information measuring probe inserted into the plasma processing chamber so that one end of the dielectric region on the insertion side and the inner wall of the plasma processing chamber at the insertion portion are substantially flush with each other. A method for measuring plasma density information, comprising:   A plasma density information measuring method for measuring plasma density information indicating plasma characteristics, wherein (A) plasma density information measuring power is supplied to the plasma from a plasma density information measuring power source for measuring the plasma density information. And (B) plasma density information based on reflection or absorption of the plasma density information measurement power by a plasma load, using a plasma density information measurement mounting tool which is a mounting tool for measuring plasma density information. The plasma density information measuring mounting tool includes an antenna that radiates power, a cable that transmits the power for measuring plasma density information, a connector that electrically connects the antenna, and the antenna. A dielectric region that covers and couples to the plasma; and a conductive region that covers the dielectric region; When the plasma processing chamber is mounted to measure plasma density information, one end of the mounting side is configured to be flat so that the dielectric region contacts the outer wall of the plasma processing chamber in the mounting portion, In the process of (B), the measurement is performed in a state in which the end of the mounting side of the dielectric region is brought into contact with the outer wall of the plasma processing chamber and the mounting tool for measuring plasma density information is mounted in the plasma processing chamber. A plasma density information measuring method.   A plasma density information measuring method for measuring plasma density information indicating plasma characteristics, wherein (A) plasma density information measuring power is supplied to the plasma from a plasma density information measuring power source for measuring the plasma density information. And (B) plasma density information based on reflection or absorption of the plasma density information measurement power by a plasma load, using a plasma density information measurement mounting tool which is a mounting tool for measuring plasma density information. The plasma density information measuring mounting tool includes an antenna that radiates power, a cable that transmits the power for measuring plasma density information, a connector that electrically connects the antenna, and the antenna. A dielectric region that covers and couples to the plasma; and a conductive region that covers the dielectric region; When inserted into and inserted into the plasma processing chamber insertion port to measure plasma density information, one end on the insertion side of the dielectric region is parallel to the inner wall of the plasma processing chamber at the insertion portion. The conductive region is in contact with the inner wall of the insertion port so that the plasma density information measurement fitting is fitted to the insertion port when the one end is formed into a planar shape and inserted into the plasma processing chamber. In the process of (B), the insertion side end of the dielectric region and the inner wall of the plasma processing chamber in the insertion portion are substantially flush with each other. A method for measuring plasma density information, comprising: mounting a plasma density information measurement mounting tool up to a position in a plasma processing chamber and mounting the mounting tool.   A plasma density information measuring apparatus for measuring plasma density information indicating characteristics of plasma, the plasma density information measuring power source for supplying plasma density information measuring power to the plasma to measure the plasma density information, and a plasma load A plasma density information measuring probe for measuring plasma density information based on reflection or absorption of the plasma density information measuring power by the antenna, the plasma density information measuring probe radiating power, and the plasma A cable for transmitting power for density information measurement and a dielectric region coupled to plasma, and when the probe for measuring plasma density information is inserted into the plasma processing chamber in order to measure plasma density information, One side of the dielectric region insertion side with respect to the inner wall of the plasma processing chamber. One end is configured to be parallel so as to be parallel to each other, and when inserted into the plasma processing chamber, the dielectric region or the dielectric region is covered so that the probe for plasma density information measurement is fitted into the insertion port. An apparatus for measuring plasma density information, wherein the probe for measuring plasma density information comprises a peripheral surface in which a covering member is brought into contact with the inner wall of the insertion opening.   10. The plasma density information measuring apparatus according to claim 9, wherein the covering member is made of a conductor.   The plasma density information measuring apparatus according to claim 9 or 10, further comprising a conductor that contacts an outer wall of the plasma processing chamber at the insertion portion when the plasma density information measuring probe is inserted into the plasma processing chamber. Characteristic plasma density information measuring device.   A plasma density information measuring apparatus for measuring plasma density information indicating characteristics of plasma, the plasma density information measuring power source for supplying plasma density information measuring power to the plasma to measure the plasma density information, and a plasma load A plasma density information measuring wearing tool that measures plasma density information based on reflection or absorption of the plasma density information measuring power by the plasma density information measuring wearing tool, and an antenna that radiates power; A cable for transmitting the plasma density information measurement power and a connector for electrically connecting the antenna; a dielectric region covering the antenna and coupled to the plasma; and a conductive region covering the dielectric region. When installed in a plasma processing chamber to measure plasma density information, Plasma density information measuring apparatus characterized by constituting the end of the mounting side such that the dielectric region on the outer wall of the plasma processing chamber is in contact with the flat in section.   A plasma density information measuring apparatus for measuring plasma density information indicating characteristics of plasma, the plasma density information measuring power source for supplying plasma density information measuring power to the plasma to measure the plasma density information, and a plasma load A plasma density information measuring wearing tool that measures plasma density information based on reflection or absorption of the plasma density information measuring power by the plasma density information measuring wearing tool, and an antenna that radiates power; A cable for transmitting the plasma density information measurement power and a connector for electrically connecting the antenna; a dielectric region covering the antenna and coupled to the plasma; and a conductive region covering the dielectric region. Equipped and inserted into the plasma processing chamber insertion port to measure plasma density information The one end of the dielectric region is parallel to the inner wall of the plasma processing chamber in the insertion portion, and one end of the dielectric region is configured to be planar, and when inserted into the plasma processing chamber, The plasma density information measuring mounting tool includes a peripheral surface in which the conductive region is brought into contact with the inner wall of the insertion port so that the plasma density information measuring mounting tool is fitted into the insertion port. measuring device.   A plasma processing method for performing plasma processing on an object to be processed in plasma, comprising: (a) supplying plasma density information measurement power to plasma from a plasma density information measurement power source for measuring plasma density information; (B) a process of measuring plasma density information based on reflection or absorption of the plasma density information measurement power by a plasma load using a plasma density information measurement probe which is a probe for measuring the plasma density information; And (c) a step of controlling plasma processing based on the measured plasma density information, wherein the plasma density information measuring probe transmits an antenna for radiating power and the plasma density information measuring power. Includes a cable and a dielectric region that couples to the plasma, plus a plasma to measure plasma density information When the density information measurement probe is inserted into the plasma processing chamber, one end of the dielectric region is configured to be flat with respect to the inner wall of the plasma processing chamber at the insertion portion. When the plasma processing chamber is inserted into the plasma processing chamber, a dielectric region or a peripheral surface covering the dielectric region is contacted with the inner wall of the insertion port so that the plasma density information measuring probe is fitted into the insertion port. The plasma density information measuring probe is provided, and at the time of the process (b), the one end of the dielectric region on the insertion side and the inner wall of the plasma processing chamber in the insertion portion are located at substantially the same plane. A plasma processing method, wherein the measurement is performed with the probe for measuring plasma density information inserted in the plasma processing chamber.   A plasma processing method of performing plasma processing on an object to be processed in plasma, wherein (A) supplying plasma density information measurement power to plasma from a plasma density information measurement power source for measuring plasma density information; (B) Plasma density information is measured based on reflection or absorption of the plasma density information measurement power by a plasma load, using a plasma density information measurement mounting tool that is a mounting tool for measuring the plasma density information. And (C) a step of controlling plasma processing based on the measured plasma density information, wherein the plasma density information measurement wearing tool includes an antenna that radiates power, and the plasma density information measurement power. A cable for transmitting the antenna and a connector for electrically connecting the antenna, and covering the antenna and plasma And a dielectric region that covers the dielectric region. When the plasma processing chamber is mounted to measure plasma density information, the dielectric region is attached to the outer wall of the plasma processing chamber at the mounting portion. One end of the mounting side is configured to be flat so that the region comes into contact, and during the step (B), the end of the mounting side of the dielectric region is brought into contact with the outer wall of the plasma processing chamber to thereby increase the plasma density. A plasma processing method, comprising: performing measurement in a state where the information measurement mounting tool is mounted in a plasma processing chamber.   A plasma processing method of performing plasma processing on an object to be processed in plasma, wherein (A) supplying plasma density information measurement power to plasma from a plasma density information measurement power source for measuring plasma density information; (B) Plasma density information is measured based on reflection or absorption of the plasma density information measurement power by a plasma load, using a plasma density information measurement mounting tool that is a mounting tool for measuring the plasma density information. And (C) a step of controlling plasma processing based on the measured plasma density information, wherein the plasma density information measurement wearing tool includes an antenna that radiates power, and the plasma density information measurement power. A cable for transmitting the antenna and a connector for electrically connecting the antenna, and covering the antenna and plasma A plasma processing chamber at the insertion portion when the plasma processing chamber is inserted into the insertion port of the plasma processing chamber to measure plasma density information. One end of the dielectric region is formed in a planar shape so that one end on the insertion side of the dielectric region is parallel to the inner wall of the plasma, and when inserted into the plasma processing chamber, a plasma density information measuring mounting tool is inserted into the insertion port. The plasma density information measuring mounting tool includes a peripheral surface in which the conductive region is brought into contact with the inner wall of the insertion port so that the conductive region is fitted, and the insertion of the dielectric region is performed during the process (B). The measurement is performed in a state in which the plasma density information measurement mounting tool is inserted into the plasma processing chamber and mounted to a position where one end on the side and the inner wall of the plasma processing chamber in the insertion portion are substantially flush with each other. Plasma treatment Law.   A plasma processing apparatus for performing plasma processing on an object to be processed in plasma, the plasma density information measuring power source supplying plasma density information measuring power to the plasma for measuring plasma density information, and the plasma by the plasma load A plasma density information measuring probe for measuring plasma density information based on reflection or absorption of power for density information measurement; and a control means for controlling plasma processing based on the measured plasma density information. The probe for measuring density information includes an antenna for radiating power, a cable for transmitting the power for measuring plasma density information, and a dielectric region coupled to plasma, and measures plasma density information for measuring plasma density information. When the probe is inserted into the plasma processing chamber, One end of the dielectric region is configured to be flat with respect to the inner wall of the plasma processing chamber, and when inserted into the plasma processing chamber, plasma density information is measured at the insertion port. A plasma processing apparatus characterized in that the plasma density information measuring probe has a peripheral surface in which a dielectric region or a covering member that covers the dielectric region is brought into contact with the inner wall of the insertion slot so that the probe for use is fitted.   The plasma processing apparatus according to claim 17, wherein the covering member is made of a conductor.   19. The plasma processing apparatus according to claim 17, further comprising a conductor that contacts an outer wall of the plasma processing chamber at the insertion portion when the probe for measuring plasma density information is inserted into the plasma processing chamber. Plasma processing equipment.   A plasma processing apparatus for performing plasma processing on an object to be processed in plasma, the plasma density information measuring power source supplying plasma density information measuring power to the plasma for measuring plasma density information, and the plasma by the plasma load A plasma density information measurement wearing tool that measures plasma density information based on reflection or absorption of power for density information measurement, and a control unit that controls plasma processing based on the measured plasma density information, and The plasma density information measurement wearing device includes an antenna that radiates power, a cable that transmits the plasma density information measurement power, a connector that electrically connects the antenna, and the antenna that covers the antenna and is coupled to plasma. Plasma density with a dielectric region and a conductive region covering the dielectric region A plasma is characterized in that one end of the mounting side is formed in a flat shape so that the dielectric region contacts the outer wall of the plasma processing chamber at the mounting portion when the plasma processing chamber is mounted to measure the information. Processing equipment. A plasma processing apparatus for performing plasma processing on an object to be processed in plasma, the plasma density information measuring power source supplying plasma density information measuring power to the plasma for measuring plasma density information, and the plasma by the plasma load A plasma density information measurement wearing tool that measures plasma density information based on reflection or absorption of power for density information measurement, and a control unit that controls plasma processing based on the measured plasma density information, and The plasma density information measurement wearing device includes an antenna that radiates power, a cable that transmits the plasma density information measurement power, a connector that electrically connects the antenna, and the antenna that covers the antenna and is coupled to plasma. Plasma density with a dielectric region and a conductive region covering the dielectric region In order to measure the information, when inserted into the insertion port of the plasma processing chamber and mounted, the insertion side end of the dielectric region is parallel to the inner wall of the plasma processing chamber in the insertion portion. One end is configured in a flat shape, and when inserted into the plasma processing chamber, a peripheral surface in which the conductive region is brought into contact with the inner wall of the insertion port so that the plasma density information measurement fitting is fitted into the insertion port. A plasma processing apparatus comprising a plasma density information measurement wearing tool.

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