JP2005197571A - Etching system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent wafer damage by a ceramic jig mounted on a chuck table with a work having one of various outer diameters to be held and processed, when the ceramic jig corresponding to the outer diameter of the work is mounted on the chuck table within the chamber of an etching system to hold the work via the jig and then to etch the work. <P>SOLUTION: When the work to be processed is held by any of first and second ceramic jigs 100 and 101 on a chuck table 55 having a holding surface 55c and insulating regions 55d, 55e, a jig identifying means 80 for discriminating between the ceramic jigs 100 and 101 is provided to previously know one of the jigs mounted on the chuck table 55. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to an etching apparatus for etching a workpiece by plasma etching.

  The plate-like workpiece is formed to have a desired thickness by grinding the surface using a grindstone. For example, in the case of a semiconductor wafer, a plurality of circuits such as IC and LSI are formed on the front surface side, and the back surface is ground to a desired thickness.

  However, a fine crack called a microcrack occurs on the ground surface, and if the plate-like material is separated into individual chips by subsequent cutting or the like, the bending strength of each chip decreases. There is. Therefore, plasma cracking is performed on the ground surface to remove microcracks (see, for example, Patent Document 1).

JP 2001-257186 A

  In the plasma etching apparatus disclosed in Patent Document 1, a plate-like object to be etched is sucked and held by the lower electrode (chuck table), but there are various types of plate-like objects having different outer diameters. Therefore, in order to stably hold the plate-like object with sufficient suction force without causing air leakage in the chuck table, the chuck table must be replaced with one corresponding to the outer diameter of each plate-like object. In other words, complicated work is required.

  Therefore, as shown in FIG. 7, a plurality of (two in the illustrated example) ring-shaped first insulating regions 55d and second insulating regions 55e having different inner and outer diameters are provided on the holding surface of the chuck table 55. The ceramic jigs 100 and 101 that cover the insulating regions and can accommodate the plate-like material are prepared for the number of types of plate-like materials, and correspond to the outer diameter of each plate-like material. Instead of replacing the chuck table, the plate-like object is also held through a ceramic jig that can accommodate each plate-like object.

  For example, when there are two types of semiconductor wafers having an outer diameter of 200 mm and 300 mm as the plate-like object to be plasma-etched, as shown in FIG. 7, a size that can hold a plate-like object having an outer diameter of 300 mm at the maximum. A ring-shaped first insulating region 55d having an inner diameter of 295 mm and an outer diameter of 305 mm and a ring-shaped second insulating region 55e having an inner diameter of 195 mm and an outer diameter of 205 mm are formed on the chuck table 55. Correspondingly, the housing portions (outside of the semiconductor wafer) having outer diameters covering the first insulating region 55d and the second insulating region 55e and corresponding to the outer diameters of the semiconductor wafers of 200 mm and 300 mm, respectively. Two kinds of ceramic jigs 100 and 101 having an inner diameter slightly larger than the diameter), and exchanging the ceramic jig according to the outer diameter of the semiconductor wafer to be etched. A semiconductor wafer is accommodated in the accommodating portion. By holding the plate-like object through the ceramic jig in this manner, the entire surface of the semiconductor wafer having a different outer diameter can be stably held and etched.

  However, if the plate-like object to be held on the chuck table does not correspond to the ceramic jig mounted on the chuck table, for example, a ceramic jig for a semiconductor wafer having an outer diameter of 200 mm is mounted on the chuck table. However, when a plate-like object having a diameter of 150 mm or 300 mm is carried into the chuck table, the plate-like object cannot be accommodated in the ceramic jig, or even if it can be accommodated, As a result, a large gap is formed between them, and if plasma etching is performed in this state, there is a problem in that portions other than the back surface of the semiconductor wafer are etched and damaged.

  Therefore, the problem to be solved by the present invention is that the ceramic jig mounted on the chuck table in the chamber of the etching apparatus corresponds to the workpiece to be held on the chuck table, thereby causing damage to the workpiece. Is to prevent.

  In order to solve the above problems, the present invention provides a chuck table for holding a workpiece, an etching gas supply means for supplying an etching gas to the workpiece held on the chuck table, and a chuck table and an etching gas supply means. A chamber in which an opening serving as a workpiece inlet / outlet is formed, a loading / unloading means for loading / unloading the workpiece into / from the chamber via the opening, and an opening in an open state or a closed state The chuck table has a holding surface for holding the workpiece and for plasmaizing the etching gas, an inner diameter smaller than the outer diameter of the workpiece, and larger than the outer diameter of the workpiece. An insulating region having an outer diameter, and the insulating region has a large outer diameter in order to accommodate at least two types of outer diameter workpieces. A ring-shaped first insulating region having an inner diameter smaller than the outer diameter of the first workpiece and having an outer diameter larger than the outer diameter of the first workpiece; A ring-shaped second insulating region having an inner diameter smaller than the outer diameter of the second workpiece having a smaller outer diameter and having an outer diameter larger than the outer diameter of the second workpiece; Includes a first ceramic jig for housing a first workpiece and covering a region of the chuck table that does not hold the first workpiece including a part of the first insulating region; Etching capable of accommodating a second workpiece and mounting a second ceramic jig that covers a portion of the chuck table that includes a part of the second insulating region and does not hold the second workpiece. A device comprising a first ceramic jig and a second Jig discriminating means for discriminating the ceramic jig provides an etching apparatus is provided.

  The outer diameter of the first ceramic jig is different from the outer diameter of the second ceramic jig, and the jig discriminating means is disposed outside the chamber, and the first ceramic jig has a first opening when the chamber opening is opened. When the outer diameter of the ceramic jig and the outer diameter of the second ceramic jig are discriminated, the type of the ceramic jig mounted on the chuck table can be discriminated from the outside of the chamber. In this case, for example, an optical sensor can be used to determine the jig. If the ceramic jig is formed so as to be discriminated at a portion other than the outer diameter, a means for discrimination may be provided correspondingly.

  Also, the jig discriminating means has a function of outputting a signal corresponding to the discrimination result, and the jig discriminating means tries to carry the ceramic disc mounted on the chuck table and the chamber by the input of the signal. Judgment means for judging whether or not the workpiece to be processed corresponds is connected, and the result of judgment by the judgment means is notified to the loading / unloading means, and the loading / unloading means in the chamber of the workpiece based on the judgment result By controlling the loading into the workpiece, it is possible to avoid the workpiece that does not correspond to the ceramic jig mounted on the chuck table being carried into the chamber.

  When the workpiece is a semiconductor wafer, the ground surface of the semiconductor wafer is etched in the chamber.

  In the present invention, the jig discriminating means can discriminate whether the jig previously mounted on the chuck table is the first ceramic jig or the second ceramic jig before etching the workpiece. Processing according to the determination result is possible.

  Jig discriminating means is arranged outside the chamber, and when the opening of the chamber is opened, the outer diameter of the first ceramic jig and the outer diameter of the second ceramic jig are discriminated. If the outer diameter of the first ceramic jig is different from the outer diameter of the second ceramic jig, the type of the ceramic jig mounted on the chuck table can be determined from the outside of the chamber. Therefore, the jig discriminating means is not affected by the etching gas or plasma.

  The jig determination means has a function of outputting a signal corresponding to the determination result, the determination means is connected to the jig determination means, the determination result by the determination means is notified to the carry-in / out means, and the determination in the carry-in / out means Based on the result, by controlling the loading of the workpiece into the chamber, the judging means judges whether or not the ceramic jig mounted on the chuck table corresponds to the workpiece to be loaded. Therefore, by notifying the loading / unloading means of the determination result, in the loading / unloading means, when the ceramic jig mounted on the chuck table does not correspond to the workpiece to be loaded, Since it is possible to avoid loading the workpiece into the chamber, it is possible to prevent the workpiece from being damaged by etching.

  When the workpiece is a semiconductor wafer, the semiconductor wafer is prevented from being damaged, and microcracks generated by grinding are removed by etching, so that the bending strength of the semiconductor chip after dicing can be increased.

  An etching apparatus 50 shown in FIG. 1 is installed adjacent to the grinding apparatus 10 in the illustrated example, and a workpiece whose surface is ground in the grinding apparatus 10 is conveyed to the etching apparatus 50. The ground surface can be etched. Below, the case where the back surface of the semiconductor wafer which is a kind of to-be-processed object is ground in the grinding apparatus 10, and the microcrack which arose on the back surface of the semiconductor wafer after the grinding in the etching apparatus 50 is demonstrated is demonstrated.

  The grinding apparatus 10 includes a cassette 11 for storing a semiconductor wafer W having a protective tape attached to the front surface, a cassette 12 for receiving a semiconductor wafer W having a protective tape attached to the front surface and ground back, and a cassette 11. Loading / unloading means 13 for unloading the semiconductor wafer W from or from the cassette 12, an alignment table 14 for aligning the semiconductor wafer W, and a first transport for transporting the semiconductor wafer W Means 15 and second transfer means 16, four holding tables 17, 18, 19, 20 for sucking and holding the semiconductor wafer W, and a turntable 21 for rotatably supporting the holding tables 17, 18, 19, 20 The first grinding means 22 and the second grinding means 23 for grinding the semiconductor wafer W, and the semiconductor wafer W after grinding are cleaned. And a cleaning unit 24 that.

  The cassette 11 stores a plurality of pre-grinding semiconductor wafers W each having a protective tape attached to the front surface thereof, which are picked up by the loading / unloading means 13 one by one. It is placed on the alignment table 14 while facing upward.

  Then, after the semiconductor wafer W is aligned at a certain position on the alignment table 14, the semiconductor wafer W is adsorbed by the first transfer means 15 and transferred to the holding table 17 by the turning movement of the first transfer means 15. Then, the semiconductor wafer W is placed on the holding table 17. At this time, the semiconductor wafer W is exposed with its back surface facing upward.

  Next, the turntable 21 is rotated by a required angle (90 degrees when there are four holding tables as in the illustrated example), so that the semiconductor wafer W held on the holding table 17 is directly below the first grinding means 22. Positioned on. At this time, the holding table 18 is automatically positioned at the position where the holding table 17 was located before the turntable 21 was rotated, and the semiconductor wafer to be ground next is unloaded from the cassette 11 and placed on the alignment table 14. After being placed and aligned, it is transported to the holding table 18 by the first transport means 15 to place the next semiconductor wafer.

  The first grinding means 22 can move up and down with respect to the standing wall portion 25, and a pair of rails 26 are arranged vertically on the inner surface of the wall portion 25, and are driven by a drive source 27. Thus, the support plate 28 is moved up and down along the rail 26, and the first grinding means 22 fixed to the support plate 28 is moved up and down accordingly.

  In the first grinding means 22, a grinding wheel 31 is mounted on the tip of a spindle 29 that is rotatably supported via a mounter 30, and a grinding wheel 32 for rough grinding is fixed to the lower part of the grinding wheel 31. Has been.

  When the semiconductor wafer W is positioned immediately below the first grinding means 22, the semiconductor wafer W is rotated by the rotation of the holding table 17, and the grinding wheel 32 is rotated by the rotation of the spindle 29 while the first grinding means 22 is rotated. When the grinding wheel 32 that is lowered and rotates contacts the back surface of the semiconductor wafer W, the back surface of the semiconductor wafer W is roughly ground. Here, a cutting groove for partitioning a plurality of circuits is formed on the surface of the semiconductor wafer W, and the back surface of the semiconductor wafer is exposed until the cutting groove is exposed from the back surface side and divided into individual semiconductor chips for each circuit. In the case of so-called tip dicing to be ground, the rough grinding is finished immediately before the cutting groove is exposed on the back surface.

  The semiconductor wafer W thus roughly ground is positioned directly below the second grinding means 23 by further rotating the turntable 21 by a required angle.

  The second grinding means 23 can move up and down with respect to the standing wall portion 25, and a pair of rails 33 are arranged in the vertical direction on the inner surface of the wall portion 25, and are driven by a drive source 34. Thus, the support plate 35 is moved up and down along the rail 33, and the second grinding means 23 fixed to the support plate 35 is moved up and down accordingly.

  In the second grinding means 23, a grinding wheel 38 is mounted on the tip of a spindle 36 that is rotatably supported via a mounter 37, and a grinding wheel 39 for finish grinding is fixed to the lower part of the grinding wheel 38. Has been.

  When the semiconductor wafer W having the protective tape 1 attached to the surface and roughly ground is positioned immediately below the second grinding means 23, the semiconductor wafer W is rotated by the rotation of the holding table 17 and is ground by the rotation of the spindle 36. The second grinding means 23 descends while the grindstone 39 rotates, and the rotating grinding grindstone 39 contacts the back surface of the semiconductor wafer W, whereby the back surface of the semiconductor wafer W is finish-ground. Here, in the case of so-called tip dicing, a cutting groove is exposed and separated into individual semiconductor chips.

  The semiconductor wafer W held on the holding table 17 and finish-ground is positioned in the vicinity of the second transfer means 16 by the rotation of the turntable 21. Then, after being transported to the cleaning unit 24 by the second transport unit 16 and the grinding dust is removed by the cleaning, it is unloaded from the cleaning unit 24 by the loading / unloading unit 40 constituting the etching apparatus 50.

  The loading / unloading means 40 disposed in the vicinity of the cassette 12 includes a suction portion 41 that sucks the semiconductor wafer W, an arm portion 42 that moves the suction portion 41 in the horizontal direction and the vertical direction, and a drive that drives the arm portion 42. The semiconductor wafer W after cleaning is adsorbed by the adsorbing unit 41 and moved by the adsorbing unit 41, so that the semiconductor wafer W is transferred to the etching apparatus 50.

As shown in FIG. 1, the etching apparatus 50 is configured by connecting a gas supply unit 51 and a plasma processing unit 52. The gas supply unit 51 includes a tank that stores an etching gas, a pump that sends the etching gas to the plasma processing unit 52, and the like. The tank stores a mixed gas for plasma generation mainly composed of at least a fluorine-based gas such as CF ₄ and oxygen.

  As shown in FIG. 2, the plasma processing unit 52 includes a chamber 53 in which plasma etching is performed. The plasma processing unit 52 accommodates an etching gas supply unit 54 from the upper side of the chamber 53 and holds a workpiece to be etched. The chuck table 55 is accommodated from the lower side of the chamber 53. The etching gas supply means 54 plays a role of introducing the gas supplied from the gas supply unit 51 into the chamber 53.

  The etching gas supply means 54 includes a shaft portion 54a that is inserted into the chamber 53 via a bearing 56 so as to be movable up and down, and an upper electrode 54b that is connected to the lower end of the shaft portion 54a. A gas flow passage 57 communicating with the gas supply portion 51 is formed inside the gas supply means 54, and a plurality of gas ejection holes 54c communicating with the gas flow passage 57 are formed inside the upper electrode 54b.

  An elevating part 60 is connected to the side part of the shaft part 54a. The elevating unit 60 is screwed into a ball screw 59 disposed in the vertical direction, and the ball screw 59 is connected to a motor 58. The elevating unit 60 is moved up and down as the ball screw 59 is rotated by being driven by the motor 58. As a result, the etching gas supply means 54 moves up and down.

  The chuck table 55 includes a shaft portion 55a that is rotatably inserted into the chamber 53 via a bearing 61, and a lower electrode 55b that is connected to the upper end of the shaft portion 55a. The lower electrode 55b is made of, for example, a metal having high electrical conductivity such as aluminum, and holds a workpiece, and also uses a holding surface 55c for plasmaizing an etching gas, a ring-shaped first insulating region 55d, and a second electrode. Insulating region 55e. The holding surface 55c is a region that holds the workpiece by suction force, and the first insulating region 55d and the second insulating region 55e do not receive the force to hold the workpiece and generate plasma due to discharge. It is a part not to let you. In the illustrated example, the first insulating region 55d is formed to protrude upward from the upper surface on the outer peripheral side, and the first insulating region 55d, the second insulating region 55e, and the holding surface 55c are flush with each other. Is formed. Note that three or more insulating regions may be formed.

  Inside the chuck table 55, a suction path 63 communicating with the suction source 62 and a cooling path 65 communicating with the cooling unit 64 are formed. The suction path 63 branches into a plurality of suction holes 63 a inside the lower electrode 55 b, and forms a holding surface 55 c on the surface of the chuck table 55. The cooling path 65 cools the workpiece to be held by cooling water circulating inside the chuck table 55.

  An opening 66 serving as a loading / unloading port for a workpiece to be etched is formed on one side of the chamber 53, and an opening / closing shutter that opens or closes the opening 66 by raising and lowering the opening 66. 67 is arranged. The opening / closing shutter 67 is moved up and down by a piston 69 that is driven by a cylinder 68 to move up and down. Further, an exhaust port 71 communicating with the gas exhaust unit 70 is formed in the lower portion of the chamber 53, and used gas can be exhausted from the exhaust port 71 to the gas exhaust unit 70.

  A high frequency power source 72 is connected to the etching gas supply means 54 and the chuck table 55. The high frequency power source 72 supplies high frequency power for making the gas introduced into the chamber 53 into plasma into the etching gas supply means 54 and the chuck table 55.

  As shown in FIG. 3, the chuck table 55 is formed with a first insulating region 55d and a second insulating region 55e. In order to hold two types of workpieces having different outer diameters, a first ceramic jig 100 is prepared corresponding to the first workpiece having a larger outer diameter, and the second ceramic workpiece having a smaller outer diameter is prepared. A second ceramic jig 101 is prepared corresponding to the workpiece, and one of the ceramic jigs is mounted on the chuck table 55 in advance depending on which workpiece is to be etched. Is held on the chuck table via any ceramic jig.

As shown in FIG. 3, when the inner diameter and outer diameter of the first insulating region 55d are D ₁₁ and D ₁₂ , respectively, and the inner diameter and outer diameter of the second insulating region 55e are D ₂₁ and D ₂₂ , respectively, the outer diameter of the first workpiece is a workpiece of larger is smaller than the D ₁₂ with greater than D _11, the outer diameter of the second workpiece is a workpiece towards the outer diameter is smaller smaller _{D 22} with greater than D _21.

As shown in FIGS. 4A and 4B, the first ceramic jig 100 and the second ceramic jig 101 have a step formed on the inner peripheral surface, and are different between the front surface side and the back surface side. It has an inner diameter. The inner diameter D _31a on the surface side of the first ceramic jig 100 is formed to be slightly larger than the outer diameter of the first workpiece so that the first workpiece can be accommodated. The inner diameter D _41a on the surface side of the ceramic jig 101 is formed to be slightly larger than the outer diameter of the second workpiece so as to accommodate the second workpiece. On the other hand, the inner diameter D _31b on the back surface side of the first ceramic jig 100 and the inner diameter D _41b on the back surface side of the second ceramic jig 101 are based on the outer diameter D _{12 of} the first insulating region 55d (see FIG. 3). The first ceramic jig 100 and the second ceramic jig 101 have a larger inner diameter (on the back side) and the outer peripheral surface of the first insulating region 55d. Fixed.

Further, in the illustrated example, the outer diameter D _{32 of} the first ceramic jig 100 and the second ceramic jig 100 are identified in order to enable the first ceramic jig 100 and the second ceramic jig 101 to be distinguished. the outer diameter _{D 42} of the tool 101 has a different configuration.

  FIG. 5A shows a case where the first ceramic jig 100 is mounted on the chuck table 55 and the first semiconductor wafer W1 is accommodated in the first ceramic jig 100 as the first workpiece. FIG. 5B shows a case where the second ceramic jig 101 is mounted on the chuck table 55 and the second semiconductor wafer W2 is accommodated in the second ceramic jig 101. FIG. In any case, since the back surface of the semiconductor wafers W1 and W2 or the ceramic jig 101 is in close contact with the holding surface 55c, there is no air leakage, and the accommodated semiconductor wafers W1 and W2 are attracted to the holding surface 55c. Held by.

  As shown in FIGS. 3 and 6, a jig discriminating means 80 is disposed outside the chamber 53. The jig discriminating means 80 has a function of discriminating the type of ceramic jig mounted on the chuck table 55, and includes an optical sensor 81 in the illustrated example. The ceramic jig mounted on the chuck table 55 has different outer diameters depending on the outer diameter of the semiconductor wafer to be accommodated, and the optical sensor 81 is based on the distance from the ceramic jig. The type can be determined.

  If the jig discriminating means 80 is arranged outside the opening / closing shutter 67 that opens and closes the opening 66 of the chamber 53 as in the illustrated example, the jig discriminating means 80 is not affected by plasma etching, so that it is possible to prevent failure. can do. A semiconductor wafer that does not correspond to the ceramic jig mounted on the chuck table 55 is carried into the chamber 53 by discriminating the jig when the open / close shutter 67 is opened and a semiconductor wafer is to be carried in. Thus, plasma etching can be prevented.

  The jig determination means 80 has a function of outputting a signal corresponding to the determination result. As shown in FIG. 6, the determination means 82 is connected to the jig determination means 80 and the determination means 82 and the loading / unloading means 40 are connected. Is connected to the ceramic jig mounted on the chuck table 55 and the semiconductor wafer to be loaded into the chamber 53 according to a signal from the jig determining means 80. Judgment can be made. For example, if the value of the outer diameter of the semiconductor wafer input from the operation panel 10 a of the grinding apparatus 10 is stored in the storage means 83, the determination means 82 reads the value of the outer diameter from the storage means 83, thereby It can be determined whether or not the jig and the semiconductor wafer correspond to each other. When it is determined that the ceramic jig and the semiconductor wafer do not correspond to each other, the carry-in / out means 40 is notified of the fact, and the carry-in / out means 40 controls the suction part 41 and the arm part 42 to transfer to the chamber 53. The loading of the semiconductor wafer can be stopped, and the semiconductor wafer can be prevented from being damaged by etching. In the case where the outer diameter of the semiconductor wafer is not stored in the storage unit 83, the determination unit 82 may be configured to recognize the outer diameter of the semiconductor wafer.

  Next, the case where the back surface of the semiconductor wafer W is ground and then the back surface is plasma etched will be described with reference to FIG. 2 and other drawings as necessary. First, the shutter 67 is lowered to open the opening 66, and the semiconductor wafer W held by the suction portion 41 (see FIG. 1) enters the chamber 53 from the opening 66. At this time, the type of the ceramic jig mounted on the chuck table 55 in the chamber 53 is discriminated by the jig discriminating means 80 (see FIGS. 3 and 6), and further carried in by the judging means 82 (see FIG. 6). It is determined whether the semiconductor wafer is to be processed. Then, only when the determination means 82 determines that the semiconductor wafer W to be loaded corresponds to the ceramic jig, the semiconductor wafer is placed on the ceramic jig with the back surface facing upward, By applying a suction force to the holding portion 55c, the semiconductor wafer W is sucked and held via the ceramic jig.

  Next, after retracting the suction portion 41 to the outside of the chamber 53, the shutter 67 is returned to the original position to close the opening 66. Then, the inside of the chamber 53 is decompressed, gas is introduced into the chamber 53 from the etching gas supply means 54, and high-frequency power is supplied from the high-frequency power source 72 to the etching gas supply means 54 and the chuck table 55 to be discharged, The back surface of the semiconductor wafer W is plasma-etched by turning the introduced gas into plasma. Then, microcracks are removed by plasma etching, and the bending strength of each semiconductor chip can be increased.

  The semiconductor wafer W whose back surface is plasma-etched as described above is opened by opening the shutter 67 shown in FIGS. 1 and 2, and the semiconductor wafer W is sucked by the suction portion 41 shown in FIG. At the same time, the suction portion 41 is moved and carried out of the chamber 53. Then, the semiconductor wafer W is transferred to the cleaning means 24 of the grinding apparatus 10 shown in FIG. 1, the etched semiconductor wafer W is cleaned, and then stored in the cassette 12 by the loading / unloading means 13. Grinding and plasma etching as described above are performed on all the semiconductor wafers accommodated in the cassette 11, and all the semiconductor wafers are accommodated in the cassette 12.

  In the present embodiment, the type of the ceramic jig is discriminated by the jig discriminating means 80 based on the fact that the outer diameter of the ceramic jig is different. For example, the discrimination is performed based on the difference in shape. You can also Further, the jig determining means 80 is not limited to one using an optical sensor.

  The present invention can be used for etching various workpieces having different outer diameters.

It is a perspective view which shows an example of a grinding device and an etching apparatus. It is sectional drawing which shows an example of a structure of an etching apparatus. It is a perspective view which shows the chuck table, jig | tool discrimination | determination means, and a ceramic jig in an etching apparatus. It is sectional drawing which shows the structure of a ceramic jig. It is sectional drawing which shows the state which mounted the ceramic jig | tool in the chuck table. It is a top view which shows a chuck table and a jig | tool discrimination | determination means. It is a perspective view which shows the chuck table and ceramic jig | tool in the conventional etching apparatus.

Explanation of symbols

10: Grinding device 11, 12: Cassette 13: Loading / unloading means 14: Positioning table 15: First conveying means 16: Second conveying means 17, 18, 19, 20: Holding table 21: Turntable 22: First grinding means 23: Second grinding means 24: Cleaning means 25: Wall part 26: Rail 27: Drive source 28: Support plate 29: Spindle 30: Mounter 31: Grinding wheel 32: Grinding wheel 33: Rail 34: Drive source 35: support plate 36: spindle 37: mounter 38: grinding wheel 39: grinding wheel
40: Etching means 41: Adsorption part 42: Arm part 43: Drive part 50: Etching device 51: Gas supply part 52: Plasma processing part 53: Chamber 54: Etching gas supply means 55: Chuck table 55a: Shaft part 55b: Lower part Electrode 55c: Holding surface 55d: First insulating region 55e: Second insulating region 56: Bearing 57: Gas flow path 58: Motor 59: Ball screw 60: Lifting unit 61: Bearing 62: Suction source 63: Suction path 64: Cooling part 65: Cooling path 66: Opening part 67: Opening / closing shutter 68: Cylinder 69: Piston 70: Gas exhaust part 71: Exhaust port 72: High frequency power supply 80: Jig discrimination means 81: Optical sensor 82: Determination means

Claims (4)

A chuck table for holding a workpiece, an etching gas supply means for supplying an etching gas to the workpiece held on the chuck table, and the chuck table and the etching gas supply means are accommodated and the workpiece A chamber in which an opening serving as a loading / unloading port is formed; loading / unloading means for loading and unloading a workpiece into / from the chamber via the opening; and an open / close shutter that opens or closes the opening Including
The chuck table holds a workpiece and has a holding surface for plasmaizing an etching gas, an insulating region having an inner diameter smaller than the outer diameter of the workpiece and an outer diameter larger than the outer diameter of the workpiece. And consists of
The insulating region corresponds to a workpiece having at least two types of outer diameters, has an inner diameter smaller than the outer diameter of the first workpiece having a larger outer diameter, and has an outer diameter of the first workpiece. A ring-shaped first insulating region having a larger outer diameter, and an inner diameter smaller than the outer diameter of the second workpiece having a smaller outer diameter than the first workpiece and the second workpiece A ring-shaped second insulating region having an outer diameter larger than the outer diameter of
The chuck table accommodates the first workpiece and includes a portion of the chuck table that includes a part of the first insulating region and covers a region that does not hold the first workpiece. One ceramic jig and the second workpiece are accommodated, and a portion of the chuck table including a part of the second insulating region is covered and does not hold the second workpiece. An etching apparatus capable of mounting a second ceramic jig,
An etching apparatus provided with jig discriminating means for discriminating between the first ceramic jig and the second ceramic jig. The outer diameter of the first ceramic jig is different from the outer diameter of the second ceramic jig,
The jig discriminating means is arranged outside the chamber and discriminates the outer diameter of the first ceramic jig and the outer diameter of the second ceramic jig when the opening is opened. The etching apparatus according to claim 1.   The jig discriminating unit has a function of outputting a signal corresponding to the discrimination result, and the jig discriminating unit includes a ceramic jig mounted on the chuck table and an inside of the chamber by the input of the signal. Judgment means for judging whether or not the workpiece to be carried in corresponds, is connected, the result of judgment by the judgment means is notified to the carry-in / out means, and the carry-in / out means obtains the result of the judgment The etching apparatus according to claim 2, wherein the delivery of the workpiece into the chamber is controlled based on the step.   The etching apparatus according to claim 1, 2 or 3, wherein the workpiece is a semiconductor wafer, and the surface of the ground semiconductor wafer is etched in the chamber.

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