JP2005177625A - Method for forming film pattern, conductive film wiring, electro-optical device, electronic appliance and non-contact card medium - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for forming film pattern which makes it possible to control the line width of a pattern as desired particularly when the pattern having a thick film is formed and, thereby realizing fine pattern and high definition pattern, and to provide a conductive film wiring, an electro-optical device, an electronic appliance and a non-contact card medium obtained by the method for forming film pattern. <P>SOLUTION: In the method for forming film pattern, droplets containing a film component are discharged to a predetermined film formation region on the substrate 1 and the film pattern is formed. The method for forming film pattern comprises a first discharge process of discharging a plurality of droplets to the whole region of film formation, a drying process of drying the droplets discharged in the first discharge process and forming an underlayer film pattern 3, a liquid-repellent treatment process of performing liquid-repellent treatment of the substrate 1, a second discharge process of discharging a plurality of droplets onto the underlayer film pattern 3 and a baking process of baking the underlayer film pattern 3 and the droplets thereon and making the film pattern. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a film pattern forming method applied to the manufacture of various devices and the like, and a conductive film wiring, an electro-optical device, an electronic apparatus, and a non-contact card medium obtained by this forming method.

A circuit element used for a semiconductor device or the like is manufactured by forming a wiring pattern on a substrate made of silicon, glass or the like. Various methods have conventionally been used for forming a wiring pattern on a substrate, and one of the most commonly used methods is a photolithography method. However, when a wiring pattern is formed by this photolithography method, the process is complicated, a large amount of waste liquid is generated during etching, and the substrate itself is damaged by an alkaline liquid used during development. There's a problem.
On the other hand, if a pattern is directly drawn by discharging a conductive liquid from the discharge head by a droplet discharge method such as an ink jet method, the process becomes simple and less waste liquid is generated. The problem of damage is also eliminated.

  However, in the above-described droplet discharge method, when the conductive liquid is discharged from the discharge head to the substrate and the pattern is formed, if the substrate is not subjected to any treatment, the droplet spreads out or is desired. In this case, the desired pattern cannot be formed neatly because it cannot be discharged to the part. Therefore, conventionally, a lyophilic / liquid-repellent pattern is formed in advance so that a portion where pattern formation is to be performed on the substrate is made lyophilic and other portions are made lyophobic. A method of forming a clean pattern in a lyophilic portion by discharging a conductive liquid in the method (see, for example, Patent Document 1 and Patent Document 2).

  By the way, in this method, after the substrate is subjected to a lyophobic treatment, the exposed portion is made lyophilic by exposing the substrate through a photomask, thereby forming a lyophilic / liquid repellent pattern simultaneously. . Therefore, in this method, a photomask is essential for forming a wiring pattern. However, since there are many types of wiring patterns, it takes a lot of cost to prepare all the photomasks for each type, resulting in an increase in manufacturing cost.

In contrast to such a method using a photomask, a method is also proposed in which a conductive liquid material is discharged by a droplet discharge method without using a photomask to form a pattern (see, for example, Patent Document 3). . In this method, the substrate is subjected to a liquid repellent treatment by FAS (fluoroalkylsilane) treatment or the like, and then the entire surface of the substrate is subjected to a short exposure process to appropriately lyophilic the substrate surface. That is, the liquid repellent surface is made lyophilic by exposure processing, and the desired line width is adjusted by adjusting the contact angle so that the droplet does not wet and spread with respect to the liquid applied to the substrate surface. This is a method of forming a wiring pattern. This method is advantageous in terms of cost because it does not require a photomask.
JP 2002-164635 A JP 2000-282240 A Japanese Patent Laid-Open No. 2003-136991

  By the way, in this method, when it is desired to increase the film thickness of the pattern obtained by overcoating the conductive liquid material and reduce the wiring resistance, the overcoating is applied to double, triple or even more. To do. However, in that case, the overcoated liquid material wets and spreads on the substrate surface, and the line width cannot be controlled as desired, so that there is a problem that it is difficult to make the pattern finer and higher definition.

  The present invention has been made in view of the above circumstances, and the object of the present invention is to make it possible to control the line width as desired, particularly when forming a pattern having a large film thickness. It is an object of the present invention to provide a film pattern forming method that enables high definition, and a conductive film wiring, an electro-optical device, an electronic device, and a non-contact card medium obtained by this forming method.

In order to achieve the above object, a film pattern forming method of the present invention is a film pattern forming method in which a film pattern is formed by discharging droplets containing a film component to a predetermined film forming region on a substrate. ,
A first discharge process for discharging the plurality of droplets at a pitch larger than the diameter of the droplets after landing on the substrate over the entire film formation region; and forming the plurality of droplets into the film A second discharge process that discharges at a pitch larger than the diameter of the droplets after landing on the substrate at a position different from the discharge position in the first discharge process in the entire region. When,
A drying step of drying the droplets discharged in the first discharge step to form a lower layer film pattern;
After the drying step, a liquid repellent treatment step of subjecting the substrate to a liquid repellent treatment;
A second discharge step of discharging a plurality of droplets onto the lower layer film pattern after the liquid repellent treatment step;
After the second discharge step, the lower layer film pattern and a baking step of baking the droplets on the lower layer film pattern to form a film pattern are provided.

  Here, the “film formation region” is a region where a film pattern is to be formed, and is mainly composed of a single or a plurality of straight lines. In addition, “the entire film forming region” does not mean the entire surface of the film forming region, but an entire region that is not biased only to a specific region of the film forming region (for example, the right half of a straight line drawn to the left and right). means. Further, “the diameter of the droplet after landing on the substrate” means the maximum diameter during which the discharged droplet naturally spreads after landing on the substrate and then shrinks with drying. That is, by “discharging at a pitch larger than the diameter of the droplet after landing on the substrate”, the droplets to be continuously discharged do not come into contact with each other even after they naturally spread after landing. It means to discharge. In addition, “different positions” means that the center positions of the droplets are different, and the droplets ejected in the first ejection process and the droplets ejected in the second ejection process are partially different from each other. It overlaps with or does not overlap completely.

According to this film pattern forming method, in the first discharge process, in both the first discharge process and the second discharge process, the droplets and the droplets are separated from each other in the film formation region on the substrate. Since the droplets are discharged, the droplets do not coalesce with each other to form a bulge, and the gap between the droplets by the first discharge process can be filled by the second discharge process. As a result, the lower layer film pattern can be formed in a continuous state.
In addition, since the lower layer film pattern is formed in this way, the substrate is subjected to the liquid repellent process in the liquid repellent process step, and thereafter, the plurality of droplets are discharged onto the lower layer film pattern in the second discharge process. In this case, the substrate is made liquid repellent, so that the droplet does not spread on the substrate, and thus the droplet does not protrude from the lower layer film pattern, and the droplet is repeatedly applied within the width. Therefore, by repeating this overcoating as appropriate, it is possible to form a film pattern with a desired film thickness and a desired line width, thereby making it possible to make the film pattern finer and higher definition.

In the method for forming a film pattern, it is preferable that the droplets contain an organic substance, for example, as a coating material for coating the film component or a dispersion medium for dispersing the film component.
In this way, since the organic matter remains in the lower layer film pattern formed by the drying process, when the substrate is subjected to a liquid repellent process such as FAS process in the liquid repellent process step, the lower film pattern is repelled on the lower layer film pattern. Therefore, when the droplets are overcoated on the lower layer film pattern in the second discharge step, the droplets wet well on the lower layer film pattern.

In the method for forming a film pattern, as the second ejection step, among the droplets that are continuously ejected, a droplet that is ejected later partially overlaps the droplet that was ejected earlier. It is preferable to discharge in such a manner.
In this way, as the second discharge process, for example, the discharge head can be run in one direction to perform one layer of overcoating, and therefore it is possible to shorten the discharge time and improve productivity. Become.

In the film pattern forming method, it is preferable that a pitch in the second discharge process is substantially the same as a pitch in the first discharge process.
If it does in this way, a process can be simplified and work efficiency can be improved. However, it is not an absolute requirement that the pitch in the second ejection process be substantially the same as the pitch in the first ejection process. For example, it is possible to make the pitch in the second ejection process approximately twice or 1/2 the pitch in the first ejection process.

In the method for forming a film pattern, it is preferable that a pitch in the first discharge step is not more than twice a diameter of a droplet after landing on the substrate.
In this way, since a continuous linear film pattern can be formed only by the first discharge process and the second discharge process, the process can be simplified and the working efficiency can be improved. When the pitch in the first discharge process exceeds twice the diameter of the droplet after landing on the substrate, another discharge process is performed once or more after the second discharge process. By doing so, a continuous linear film pattern can be formed.

In the film pattern forming method, the contact angle between the surface of the substrate on the film formation region side of the substrate and the droplet is 20 [deg] or more and 60 [deg] or less before the first discharge step. It is preferable to have a pretreatment step for adjusting so that.
In this way, the lower layer film pattern is formed in a continuous state by suppressing the excessive wetting and spreading of the landed droplets and filling the gaps of the droplets by the first ejection process by the second ejection process. It becomes possible to do.

In addition, in this film pattern formation method, it is preferable to have an irradiation step of irradiating the substrate with energy rays such as ultraviolet rays between the drying step and the liquid repellent treatment step.
If it does in this way, the liquid repellent film formed by the said pre-processing process will decompose | disassemble by irradiation of an ultraviolet-ray. Therefore, when the substrate is subsequently subjected to a liquid repellent treatment by, for example, FAS treatment in a liquid repellent treatment step, a denser and better liquid repellent film is formed.

Moreover, in this film pattern forming method, it is preferable that the substrate is a light-transmitting substrate and the ultraviolet rays are irradiated from the back side of the substrate.
If it does in this way, among the liquid repellent film formed by the said pre-processing process, the part formed under the said lower layer film pattern will also decompose | disassemble by irradiation of an ultraviolet-ray. Therefore, the adhesion of the film pattern obtained by the firing process to the substrate is improved.

In the film pattern forming method, the film component preferably contains conductive fine particles.
In this way, it is possible to form a conductive film wiring that is thick and advantageous for electrical conduction and is less susceptible to defects such as disconnection and short-circuiting in a fine and high-definition manner.

The conductive film wiring of the present invention is characterized by being formed by the film pattern forming method described above.
According to this conductive film wiring, as described above, the film thickness is large, which is advantageous for electric conduction, is not likely to cause defects such as disconnection or short circuit, and can be made finer and higher definition.

In addition, the conductive film wiring of the present invention is characterized by including a conductive film wiring, the electronic device of the present invention is characterized by including the electro-optical device, and the non-contact type card medium of the present invention includes: The conductive film wiring is provided as an antenna circuit.
According to these embodiments of the present invention, there are provided an electro-optical device that can be reduced in size and thickness, and an electronic device and a non-contact type card medium that are less likely to cause defects such as disconnection or short circuit of a wiring portion or an antenna. can do.

The present invention will be described in detail below.
First, as an embodiment of the film pattern forming method of the present invention, an example in which the present invention is applied to a method of forming a wiring pattern made of a conductive film will be described.
The wiring pattern forming method of this example is a method of forming a wiring pattern (film pattern) by discharging liquid droplets containing a film component to a predetermined film forming region on the substrate. A pretreatment process, a first discharge process, a drying process, an irradiation process, a liquid repellent treatment process, a second discharge process, and a baking process are provided.
Hereinafter, each step will be described.

(Substrate pretreatment process)
First, as shown in FIG. 1A, a substrate 1 for forming a wiring pattern is prepared. As the substrate 1, various materials such as Si wafer, quartz glass, glass, plastic film, and metal plate can be used. As will be described later, energy rays such as ultraviolet rays are irradiated from the back side of the substrate particularly in the irradiation process. In this case, a translucent material such as quartz glass is used as the substrate 1 in particular. Here, a semiconductor film, a metal film, a dielectric film, an organic film, or the like is formed as a base layer on the surface of the substrate made of these various materials, and this is used as a substrate in the present invention. A wiring pattern may be formed. Even in such a case, it is preferable that the entire substrate including the base layer is translucent. In this example, a translucent substrate such as quartz glass is used.

  For such a substrate 1, the surface on the pattern forming side, that is, the surface on the film forming region side is adjusted so that the contact angle with the liquid material is 20 [deg] or more and 60 [deg] or less. Thus, in order to adjust the liquid repellency (wetting property) of the substrate surface, that is, to pre-treat the substrate surface, various surface treatment methods described below can be employed.

  One of the surface treatment methods is a method of forming a self-assembled film made of an organic molecular film or the like on the surface on the film forming region side. The organic molecular film for treating the substrate surface has a functional group that can bind to the substrate and a functional group that modifies the surface properties of the substrate, such as a lyophilic group or a liquid repellent group, on the opposite side (controls the surface energy). And a carbon straight chain or a partially branched carbon chain connecting these functional groups, and is bonded to a substrate and self-assembles to form a molecular film, for example, a monomolecular film.

The self-assembled film is composed of a binding functional group capable of reacting with atoms constituting the substrate (or underlying layer) and other linear molecules, and has extremely high orientation due to the interaction of the linear molecules. It is a film formed by orienting a compound. Since the self-assembled film is formed by aligning single molecules, the film thickness can be extremely reduced, and the film is uniform at the molecular level. That is, since the same molecule is located on the surface of the film, uniform and excellent liquid repellency and lyophilicity can be imparted to the surface of the film.
When, for example, fluoroalkylsilane (FAS) is used as the compound having high orientation, each compound is oriented so that the fluoroalkyl group is located on the surface of the film to form a self-assembled film. Therefore, uniform liquid repellency is imparted to the surface of the film.

  Examples of the compound that forms such a self-assembled film include heptadecafluoro-1,1,2,2 tetrahydrodecyltriethoxysilane, heptadecafluoro-1,1,2,2 tetrahydrodecyltrimethoxysilane, heptadeca Fluoro-1,1,2,2 tetrahydrodecyltrichlorosilane, tridecafluoro-1,1,2,2 tetrahydrooctyltriethoxysilane, tridecafluoro-1,1,2,2 tetrahydrooctyltrimethoxysilane, trideca Fluoroalkylsilanes (hereinafter referred to as “FAS”) such as fluoro-1,1,2,2 tetrahydrooctyltrichlorosilane, trifluoropropyltrimethoxysilane, and the like. In use, it is preferable to use one compound alone, but two or more compounds may be used in combination. In the present invention, the FAS is used as the compound that forms the self-assembled film.

FAS is generally represented by the structural formula R _n SiX _(4-n) . Here, n represents an integer of 1 to 3, and X is a hydrolyzable group such as a methoxy group, an ethoxy group, or a halogen atom. R is a fluoroalkyl group, and has a structure of (CF ₃ ) (CF ₂ ) _x (CH ₂ ) _y (where x represents an integer of 0 to 10 and y represents an integer of 0 to 4). Have. When a plurality of R or X are bonded to Si, each R or X may be the same or different. The hydrolyzable group represented by X forms silanol by hydrolysis, reacts with the hydroxyl group of the base such as a substrate (quartz glass, silicon), etc., and bonds to the substrate with a siloxane bond. On the other hand, since R has a fluoro group such as (CF ₃ ) on the surface, the base surface such as a substrate is modified to a surface that does not wet (surface energy is low), that is, a liquid repellent surface.

  Such a self-assembled film is formed on the substrate 1 when the raw material compound (for example, FAS) and the substrate 1 are placed in the same sealed container and left at room temperature for about 2 to 3 days. Is done. Further, by holding the entire sealed container at 120 ° C., it is formed on the substrate 1 in about 2 hours. What has been described above is the formation method from the gas phase, but the self-assembled film can also be formed from the liquid phase. For example, a self-assembled film can be obtained on the substrate 1 by immersing the substrate 1 in a solution containing a raw material compound, washing and drying. Before forming the self-assembled film, it is desirable to perform pretreatment by irradiating the surface of the substrate 1 with ultraviolet light or washing with a solvent.

  In this example, the FAS film (liquid repellent film) 2 is formed on the surface of the substrate 1 as shown in FIG. In the substrate 1 on which the FAS film 2 is formed in this manner, the contact angle of the liquid material with respect to the surface on which the FAS film 2 is formed exceeds 60 [deg], for example. However, when the contact angle is increased in this way, there is a high possibility that droplets discharged in the first discharge step, which will be described later, are combined with each other to generate a bulge. Therefore, in the pretreatment of this example, as shown in FIG. 1A, the FAS film 2 is irradiated with ultraviolet rays for a short time, and the self-assembled film constituting the FAS film 2 is partially decomposed, thereby The surface of the substrate 1 on the film forming region side is adjusted so that the contact angle with the liquid material is 20 [deg] or more and 60 [deg] or less. The irradiation conditions and the irradiation time of ultraviolet rays are appropriately determined by conducting experiments or the like in advance according to the liquid repellency (contact angle) of the formed FAS film 2.

  In addition, as a surface treatment for adjusting the liquid repellency (wetting property) of the surface of the substrate 1, another method includes a method of plasma irradiation in normal pressure or vacuum. Various types of gas used for the plasma treatment can be selected in consideration of the surface material of the substrate on which the conductive film wiring is to be formed. For example, tetrafluoromethane, perfluorohexane, perfluorodecane, etc. can be used as the processing gas.

(First discharge process)
Next, a liquid material for wiring is ejected as droplets by the ink jet method (droplet ejection method) onto the surface of the substrate 1 pretreated in this way, and the liquid material is spread over the entire film formation region. Arrange.
Here, the ink jet method is a method in which, for example, the discharge head 34 shown in FIGS. 2A and 2B is used, and the liquid material is discharged as droplets.
As shown in FIG. 2A, the discharge head 34 includes, for example, a stainless steel nozzle plate 12 and a vibration plate 13, and both are joined via a partition member (reservoir plate) 14. A plurality of cavities 15 and reservoirs 16 are formed between the nozzle plate 12 and the diaphragm 13 by the partition member 14, and the cavities 15 and the reservoirs 16 communicate with each other via a flow path 17. Yes.

Each cavity 15 and the inside of the reservoir 16 are filled with a liquid material, and a flow path 17 between them functions as a supply port for supplying the liquid material from the reservoir 16 to the cavity 15. . In addition, a plurality of hole-shaped nozzles 18 for injecting a liquid material from the cavity 15 are formed in the nozzle plate 12 in a state of being aligned vertically and horizontally. On the other hand, the diaphragm 13 is formed with a hole 19 that opens into the reservoir 16, and a liquid tank (not shown) is connected to the hole 19 via a tube (not shown). It has become.
Also, a piezoelectric element (piezo element) 20 is joined to the surface of the diaphragm 13 opposite to the surface facing the cavity 15 as shown in FIG. The piezoelectric element 20 is sandwiched between a pair of electrodes 21 and 21 and is configured to bend so as to protrude outward when energized.

The diaphragm 13 to which the piezoelectric element 20 is bonded in such a configuration is bent together with the piezoelectric element 20 at the same time, thereby increasing the volume of the cavity 15. Then, the cavity 15 and the reservoir 16 communicate with each other, and when the reservoir 16 is filled with the liquid material, the liquid material corresponding to the increased volume in the cavity 15 flows from the reservoir 16. It flows in through the path 17.
When the energization to the piezoelectric element 20 is released from such a state, both the piezoelectric element 20 and the diaphragm 13 return to their original shapes. Accordingly, since the cavity 15 also returns to its original volume, the pressure of the liquid material inside the cavity 15 rises, and the liquid droplet 22 is discharged from the nozzle 18.

  The ejection means of the ejection head may be other than the electromechanical transducer using the piezoelectric element (piezo element) 20, for example, a method using an electrothermal transducer as an energy generating element, a charge control type, It is also possible to employ a continuous method such as a pressure vibration type, an electrostatic suction method, or a method in which an electromagnetic wave such as a laser is irradiated to generate heat and a liquid material is discharged by the action of this heat generation.

  Further, a liquid material for wiring discharged using such a discharge head 34 will be described. In this liquid material, a film component contains conductive fine particles, and the conductive fine particles are dispersed in a dispersion medium. It is the dispersion liquid formed. As the conductive fine particles to be used, fine particles of conductive polymer, superconductor, etc. are used in addition to metal fine particles containing any of gold, silver, copper, palladium and nickel. In order to improve the dispersibility, these conductive fine particles are usually used with an organic material coated on the surface. Examples of the coating material include organic solvents such as xylene and toluene, citric acid, and the like. The particle diameter of the conductive fine particles is preferably 5 nm or more and 0.1 μm or less. If it is larger than 0.1 μm, nozzle clogging is likely to occur, and it becomes difficult to discharge by the ink jet method. On the other hand, if the thickness is smaller than 5 nm, the volume ratio of the coating agent to the conductive fine particles becomes large, and the ratio of the organic matter in the obtained film becomes excessive.

  The liquid dispersion medium containing conductive fine particles preferably has a vapor pressure at room temperature of 0.001 mmHg to 200 mmHg (about 0.133 Pa to 26600 Pa). This is because when the vapor pressure is higher than 200 mmHg, the dispersion medium rapidly evaporates after discharge, and it becomes difficult to form a good film. The vapor pressure of the dispersion medium is more preferably 0.001 mmHg or more and 50 mmHg or less (about 0.133 Pa or more and 6650 Pa or less). This is because when the vapor pressure is higher than 50 mmHg, nozzle clogging due to drying tends to occur when droplets are ejected by the ink jet method, and stable ejection becomes difficult. On the other hand, in the case of a dispersion medium having a vapor pressure lower than 0.001 mmHg at room temperature, drying becomes slow and the dispersion medium tends to remain in the film, and it becomes difficult to obtain a high-quality conductive film after the post-baking process. Because.

  The dispersion medium to be used is not particularly limited as long as it can disperse the conductive fine particles and does not cause aggregation. In addition to water, alcohols such as methanol, ethanol, propanol and butanol, n- Hydrocarbon compounds such as heptane, n-octane, decane, toluene, xylene, cymene, durene, indene, dipentene, tetrahydronaphthalene, decahydronaphthalene, cyclohexylbenzene, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol methyl ethyl Ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, 1,2-dimethoxyethane, bis (2-methoxyethyl) ether Le, p- ether compounds such as dioxane, propylene carbonate, .gamma.-butyrolactone, N- methyl-2-pyrrolidone, dimethylformamide, dimethyl sulfoxide, may be mentioned polar compounds consisting of organic material, such as cyclohexanone. Of these, water, alcohols, hydrocarbon compounds, and ether compounds are preferred from the viewpoints of fine particle dispersibility, dispersion stability, and ease of application to the ink jet method, and more preferred dispersion media. Can include water and hydrocarbon compounds. These dispersion media can be used alone or as a mixture of two or more.

When the conductive fine particles are dispersed in a dispersion medium, the dispersoid concentration is 1% by mass or more and 80% by mass or less, and can be adjusted according to the desired film thickness of the conductive film. If it exceeds 80% by mass, aggregation tends to occur and it becomes difficult to obtain a uniform film.
The surface tension of the dispersion liquid of the conductive fine particles is preferably in the range of 0.02 N / m or more and 0.07 N / m or less. When the liquid is ejected by the ink jet method, if the surface tension is less than 0.02 N / m, the wettability of the ink composition with respect to the nozzle surface increases, and thus flight bending easily occurs, and exceeds 0.07 N / m. This is because the shape of the meniscus at the nozzle tip is not stable, and it becomes difficult to control the discharge amount and the discharge timing.

  In order to adjust the surface tension, a trace amount of a surface tension adjusting agent such as a fluorine-based, silicone-based, or nonionic-based one can be added to the dispersion within a range that does not unduly decrease the contact angle with the substrate. The nonionic surface tension modifier improves the wettability of the liquid to the substrate, improves the leveling property of the film, and helps to prevent the occurrence of crushing of the coating film and the generation of the itchy skin. The dispersion liquid may contain an organic compound such as alcohol, ether, ester, or ketone, if necessary.

  The dispersion preferably has a viscosity of 1 mPa · s to 50 mPa · s. When discharging by the inkjet method, if the viscosity is less than 1 mPa · s, the nozzle periphery is easily contaminated by the outflow of ink, and if the viscosity is more than 50 mPa · s, the nozzle hole is clogged frequently. This is because it becomes difficult to smoothly discharge droplets.

  The liquid thus prepared, that is, the dispersion, is discharged onto the entire film formation region on the pretreatment surface of the substrate 1 by the discharge head 34 as shown in FIG. About this discharge method, it performs by the process of two steps, the 1st discharge process and the 2nd discharge process. In this example, a case where the wiring formation region (film formation region) is a straight line will be described.

First Discharge Process First, as shown in FIG. 3A, the liquid droplet L _{1 of the} dispersion liquid is discharged from the inkjet head 34 and dropped onto the wiring formation region on the substrate 1. The droplets L ₁ are ejected at a pitch larger than the diameter after the droplets L ₁ have landed on the substrate 1. That is, as the droplet L ₁ is not in contact with each other on the substrate 1, to discharge at regular intervals.

After discharging droplets L ₁ throughout the wiring forming region, since the removal of the dispersion medium, the drying treatment if necessary. The drying process can be performed by lamp annealing, for example, in addition to a process using a normal hot plate or an electric furnace for heating the substrate 1. The light source used for lamp annealing is not particularly limited, but excimer laser such as infrared lamp, xenon lamp, YAG laser, argon laser, carbon dioxide laser, XeF, XeCl, XeBr, KrF, KrCl, ArF, ArCl, etc. Can be used as a light source. In general, these light sources have an output in the range of 10 W to 5000 W, but in the present embodiment, a range of 100 W to 1000 W is sufficient.

At this time, it is not necessary to increase the degree of heating or light irradiation until the dispersion liquid is converted into a conductive film as well as removal of the dispersion medium. That is, the conversion to the conductive film is performed collectively in the baking step after the second discharge step described later is completed. In particular, here, it is preferable that a certain amount of organic matter remains in the discharged dispersion liquid for the liquid repellent treatment process described later. For this reason, in the first discharge process, the fluidity of the dispersion liquid is almost unchanged. It is sufficient to remove the dispersion to the extent that it disappears. Therefore, in the case of heat treatment, it is usually sufficient to perform heating at about 100 ° C. for several minutes. Also, the drying process can proceed simultaneously with the ejection. For example, it is possible to advance the drying immediately after the landing of the substrate 1 by discharging it onto the heated substrate 1 or cooling the inkjet head 34 and using a dispersion medium having a low boiling point. After drying, the droplets _{L 1} is a dry film _{S 1.} Volume dry film S ₁ as shown in FIG. 3 (b) is significantly reduced by removal of the dispersion medium, it has viscosity tends to be fixed at a predetermined position of the wiring forming region increases.

Second Discharge Process Next, as shown in FIG. 3C, the liquid droplet L _{2 of the} dispersion liquid is discharged from the inkjet head 34 and dropped onto the wiring formation region on the substrate 1. Incidentally, the droplet L ₂ is a droplet of the same dispersion as droplets L _1, volume is the same. This droplet _{L 2} is dropped substantially at the center of the droplet _{L 1} and the droplet _{L 1.} That is, the pitch of the droplet L ₂ and the droplet L ₁ is the same, and the droplet L ₂ is also ejected at a pitch larger than the diameter after landing on the substrate 1. Therefore, as the droplet L ₂ do not contact each other on the substrate 1 even. At this time, contact is the droplet L ₂ and dry film S _1, since the dry film S ₁ has already dispersion medium is removed to some extent, does not cause bulges in both attract each other. In FIG. 3 (c), the although the dropping start position of the droplet L ₂ was from the same left side of the drawing the droplet L _1, may start dropping from the opposite direction (right side in the drawing). In this case, the first ejection process and the second ejection process can be performed by reciprocating the relative movement between the inkjet head 34 and the substrate 1 once.

Here, the ejection positions in the first ejection process and the second ejection process will be described in more detail with reference to the plan view of FIG. As shown in FIG. 4, the pitch _{P 1} of the droplet _{L 1} is greater than the diameter _{R 1} after landing on the substrate 1 of the droplet _{L 1,} the droplet _{L 1} interval _d 1 _(d 1 = _{P 1} -R ₁₎ is discharged at a. The pitch _{P 2} of the droplet _{L 2} is greater than the diameter _{R 2} after landing on the substrate 1 of the droplet _{L 2,} the droplet _{L 2} is distance _d 2 a _{(d 2 =} P 2 -R ₂₎ Is discharged. Here, the volumes of the droplet L ₁ and the droplet L ₂ are equal to each other and have a relation of R ₁ = R _2. However, in the second discharge process, the dry film S _{1 is} on the substrate 1. Since lyophilicity is increasing, R ₂ is slightly larger in the length direction than R ₁ . In addition, the pitch P ₁ and the pitch P ₂ are equal to each other and have a relation of d ₁ = d _2. However, since R ₂ is slightly larger in the length direction than R ₁ , d ₂ is slightly smaller in comparison with the _{d 1.} D ₁ is preferably 10 μm or more. Accordingly, even in consideration of an error and R ₂ of the landing positions of the droplets is increased slightly, it is possible to liquid droplets ejected continuously is discharged so as not to be in contact apart from each other.

(Drying process)
Performing a second discharge process for discharging this way the droplets L ₂ across the wiring forming region, when finished the first discharge step, discharged in the first discharge step (second discharge process) droplets The dispersion (liquid body) consisting of is dried. That is, in order to remove the dispersion medium in the dispersion, a drying process is performed in the same manner as after the first discharge process. Again, this is done only for the purpose of removing the dispersion medium to some extent. Also, this drying process may be performed simultaneously in parallel with the second ejection process.
By performing the drying process in this manner, the droplet L ₂ becomes the dry film S _{2 as} shown in FIG. Dry film S _2, the volume has been significantly reduced by removal of the dispersion medium in a state where viscosity is substantially fixed at a predetermined position of the rising wiring forming region. Thus, dry film S ₁ and dry film S ₂ and is continuous linear dry film pattern, that is, lower film pattern 3 as shown in Figure 1 (c).

(Liquid repellent treatment process)
Next, the surface of the substrate 1 on which the lower layer film pattern 1 is formed is again subjected to a liquid repellent treatment. As the liquid repellent treatment, the FAS treatment described above, that is, the self-assembled film forming treatment by FAS is particularly preferably used. When the liquid repellent process (FAS) is performed in this way, a new liquid repellent film (FAS film) 4 is formed in addition to the place where the lower layer film pattern 3 is formed, as shown in FIG. . In the liquid repellent film 4 thus obtained, the contact angle of the dispersion liquid (liquid body) with respect to the liquid repellent film 4 exceeds 60 [deg], for example, so that the dispersion liquid spreads on the liquid repellent film 4. It becomes difficult.
At this time, the organic substance in the dispersion, that is, the coating material or the dispersion medium coating the conductive fine particles remains in the lower layer film pattern 3 even after the drying step. Therefore, when the substrate 1 is subjected to the liquid repellent treatment by the FAS treatment in this liquid repellent treatment step, the self-organized film is not formed due to the presence of organic matter on the lower layer film pattern 3. The original state is maintained without being liquefied.
In the liquid repellent treatment step, the FAS treatment can be performed by bringing the substrate 1 and the FAS into contact with each other in an atmosphere heated to about 120 ° C., for example. In that case, this lyophobic treatment step can be performed in combination with the drying step, which is efficient.

(Second discharge process)
Next, as shown in FIG. 1 (d), a plurality of droplets made of the dispersion liquid (liquid material) are ejected from the inkjet head 34, and are overcoated on the lower layer film pattern 3. At the time of this discharge, it is preferable to perform one layer of overcoating by a series of discharge operations without dividing into the first discharge process and the second discharge process as in the first discharge step described above. . That is, as shown in FIG. 1 (d), a plurality of droplets made of a dispersion liquid are replaced with a droplet discharged after a continuous discharge of droplets. It discharges so that a part may overlap. By discharging in this way, it is possible to carry out the overcoating for one layer by running the discharge head 34 in one direction. Therefore, the discharge time can be shortened and the productivity can be improved. In the second ejection step, the number of times of overcoating is not limited to one, but overcoating is performed a plurality of times as necessary so that the obtained wiring pattern has a desired film thickness. In this case, for example, for the second and subsequent ejections (second layer), the traveling direction of the ejection head 34 is reversed from the traveling direction of the previous (previous layer), that is, the traveling and ejection of the ejection head 34. By performing reciprocation, the discharge time can be shortened.

  Further, when droplets made of a dispersion liquid are overcoated on the lower layer film pattern 3 in this manner, a new liquid repellent film (FAS film) 4 is formed in addition to the place where the lower layer film pattern 3 is formed in the liquid repellent process. Since it is formed, the overcoated liquid droplets do not spread over the liquid repellent film 4, and therefore, the liquid droplets are overcoated within the width without protruding from the lower layer film pattern 3. Therefore, by repeating this overcoating as appropriate, the dispersion can be applied with a desired film thickness and a desired line width.

(Baking process)
Thereafter, the lower layer film pattern 3 and the liquid material thereon are baked to obtain a wiring pattern to be a film pattern in the present invention. Here, in this firing step, the dispersion medium is completely removed in order to improve the electrical contact between the lower layer film pattern 3 and the conductive fine particles in the liquid material thereon, and to obtain a wiring having good conductivity. There is a need. Further, it is necessary to remove the coating material on the surface of the conductive fine particles. In order to remove such a dispersion medium and coating material to obtain a good conductive wiring, the firing temperature is preferably about 300 ° C., for example. The firing atmosphere is usually in the air, but may be performed in an inert gas atmosphere such as nitrogen, argon, or helium as necessary.

In such a wiring pattern formation method, since a new liquid repellent film (FAS film) 4 is formed in a place other than the place where the lower layer film pattern 3 is formed in the liquid repellent process, Therefore, the wiring pattern can be formed with a desired film thickness and a desired line width by appropriately repeating the overcoating, so that the wiring pattern does not spread over the liquid repellent film 4. Refinement can be achieved.
In addition, the wiring pattern obtained by this wiring pattern forming method, that is, the conductive film wiring according to one embodiment of the present invention has a large film thickness, which is advantageous for electrical conduction, and is less prone to defects such as disconnection and short circuit. Moreover, miniaturization and high definition are possible.

Note that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. For example, you may have the irradiation process which irradiates energy rays, such as an ultraviolet-ray, with respect to the said board | substrate 1 between the said drying process and the said liquid-repellent treatment process.
Moreover, when it has such an irradiation process, it is preferable to irradiate the back surface side of the board | substrate 1 with an energy ray (ultraviolet ray) especially as shown to Fig.5 (a). Here, as the substrate 1, it is necessary to use a translucent substrate such as quartz glass as described above.

In this way, the FAS film 2 formed in the pretreatment process can be decomposed by irradiation with ultraviolet rays. Therefore, when the substrate 1 is subsequently subjected to a liquid repellent treatment such as FAS treatment in the liquid repellent treatment step, a more uniform and better liquid repellent film 4 can be formed. It is possible to reliably prevent wetting and spreading on the liquid repellent film 4. Further, by irradiating from the back side of the substrate 1, the ultraviolet light transmitted through the substrate 1 is also irradiated to the portion formed below the lower layer film pattern 3, and this is decomposed as shown in FIG. 5 (b). To do. Therefore, the adhesion of the wiring (film) pattern obtained in the firing process to the substrate 1 is improved.
In addition, about the ultraviolet-ray, you may irradiate the upper surface side of the board | substrate 1, ie, the side in which the lower layer film pattern 3 was formed, In that case, the FAS film 2 under the lower layer film pattern 3 cannot be decomposed. The FAS film 2 at other locations can be decomposed to form a good liquid repellent film 4. Accordingly, it is possible to reliably prevent the liquid droplet from being wet spread on the liquid-repellent film 4 when being overcoated.

  Further, in the present invention, the film component contained in the liquid is not limited to the conductive fine particles, and other various functional materials are used as the film component, thereby various functional films. A pattern may be formed. Here, the functionality in the functional material means electrical / electronic (conductive, insulating, piezoelectric, pyroelectric, dielectric, etc.), optical (light selective absorption, reflectivity, polarization, light selection). Permeability, nonlinear optical properties, luminescence such as fluorescence or phosphorescence, photochromic properties, etc.), magnetic (hard magnetic, soft magnetic, non-magnetic, magnetic permeability, etc.), chemical (adsorptive, desorption, catalytic, water absorption) , Ion conductivity, oxidation-reduction properties, electrochemical properties, electrochromic properties, etc.), mechanical (wear resistance, etc.), thermal (thermal conductivity, thermal insulation, infrared radiation, etc.), biofunctional (biocompatibility) , Antithrombotic properties, etc.).

The wiring pattern obtained from the conductive fine particles is used, for example, as a wiring pattern in a liquid crystal device, an organic EL device, an electro-optical device such as a plasma display, an electronic device using these, and various semiconductor devices. .
Therefore, the electro-optical device and electronic apparatus having the wiring pattern (conductive wiring) of the present invention, and the non-contact card medium apply the above-described film pattern forming method and conductive wiring of the present invention. As a result, defects such as disconnection or short circuit of the wiring portion or antenna are unlikely to occur, and the size and thickness can be reduced.

Next, specific examples of such an electro-optical device and an electronic apparatus will be described.
FIG. 6 is a diagram showing an example in which the electrical engineering apparatus of the present invention is applied to a plasma display. In FIG. 6, reference numeral 500 denotes a plasma display. The plasma display 500 is generally configured by a glass substrate 501 and a glass substrate 502 that are arranged to face each other, and a discharge display portion 510 that is formed therebetween.

The discharge display unit 510 includes a plurality of discharge chambers 516, and among the plurality of discharge chambers 516, three of the red discharge chamber 516 (R), the green discharge chamber 516 (G), and the blue discharge chamber 516 (B). Two discharge chambers 516 are arranged in pairs to constitute one pixel.
Address electrodes 511 are formed in stripes at predetermined intervals on the upper surface of the (glass) substrate 501, a dielectric layer 519 is formed so as to cover the address electrodes 511 and the upper surface of the substrate 501, and further a dielectric layer A partition wall 515 is formed on the 519 between the address electrodes 511 and 511 and along the address electrodes 511. The partition wall 515 is also partitioned at a predetermined interval in a direction perpendicular to the address electrode 511 at a predetermined position in the longitudinal direction (not shown), and is basically adjacent to the left and right sides of the address electrode 511 in the width direction. A rectangular region partitioned by the barrier ribs and the barrier ribs extending in a direction orthogonal to the address electrodes 511 is formed, and discharge chambers 516 are formed so as to correspond to the rectangular regions. One pixel is composed of three pairs. In addition, a phosphor 517 is disposed inside a rectangular region partitioned by the partition 515. The phosphor 517 emits red, green, or blue fluorescence. The red phosphor 517 (R) is located at the bottom of the red discharge chamber 516 (R), and the bottom of the green discharge chamber 516 (G). Are arranged with a green phosphor 517 (G) and a blue phosphor 517 (B) at the bottom of the blue discharge chamber 516 (B).

Next, on the glass substrate 502 side, transparent display electrodes 512 made of a plurality of ITO are formed in stripes at a predetermined interval in a direction orthogonal to the previous address electrode 511, and in order to compensate for the high resistance ITO. Further, a bus electrode 512a made of metal is formed. Further, a dielectric layer 513 is formed so as to cover them, and a protective film 514 made of MgO or the like is further formed.
The substrate 501 and the substrate 2 of the glass substrate 502 are bonded to each other so that the address electrodes 511 and the display electrodes 512 are opposed to each other so as to be orthogonal to each other, and are formed on the substrate 501, the partition wall 515, and the glass substrate 502 side. A discharge chamber 516 is formed by evacuating a space surrounded by the protective film 514 and enclosing a rare gas. Note that two display electrodes 512 formed on the glass substrate 502 side are formed so as to be arranged two by two for each discharge chamber 516.
The address electrode 511 and the display electrode 512 are connected to an alternating current power supply (not shown), and the phosphor 517 is excited to emit light in the discharge display portion 510 at a necessary position by energizing each electrode, thereby enabling color display. ing.

In this example, the address electrode 511 and the bus electrode 512a are formed by the wiring pattern (conductive film wiring) of the present invention described above.
Therefore, according to the plasma display of this example, the wiring pattern is less likely to be broken or short-circuited as described above, so that it has high reliability and can be reduced in size and thickness. .

Further, an electronic apparatus of the present invention has the above wiring pattern (conductive film wiring), and specifically includes a mobile phone shown in FIG.
FIG. 7 is a perspective view showing an example of a mobile phone. In FIG. 7, reference numeral 600 denotes a mobile phone body, and reference numeral 601 denotes a display portion having the wiring pattern.
In addition to such mobile phones, the present invention can also be applied to portable information processing devices such as word processors and personal computers, and wristwatch-type electronic devices.

Furthermore, as an electronic apparatus of the present invention, a non-contact card medium provided with the wiring pattern (conductive film wiring) as an antenna circuit can be cited as an example. FIG. 8 is a view showing an example of such a non-contact type card medium, and reference numeral 400 in FIG. 8 denotes a non-contact type card medium. This non-contact type card medium 400 includes a semiconductor integrated circuit chip 408 and an antenna circuit 412 in a housing made up of a card base 402 and a card cover 418, and is connected to an external transmitter / receiver (not shown) by electromagnetic waves or capacitive coupling. At least one of power supply and data exchange is performed by at least one of them.
In this example, the antenna circuit 412 is formed by the functional pattern (wiring pattern) of the present invention described above. Therefore, according to the contactless card medium 400 of this example, the antenna circuit 412 is less likely to be broken or short-circuited as described above, so that it has high reliability and can be reduced in size and thickness. It will be something.

Hereinafter, the method for forming a wiring (film) pattern of the present invention will be described in more detail based on the examples.
(Example 1)
A commercially available slide glass was used as the substrate.
First, UV irradiation (wavelength 254 nm, energy density 10 mW / cm ² ) was performed on the substrate for 10 minutes, and this was washed and made lyophilic. Next, this substrate and about 100 μl of heptadecafluoro-1,1,2,2-tetrahydrodecyltriethoxysilane are placed in a sealed container and heat-treated at 120 ° C. for 2 hours to form a monomolecular film as a liquid repellent film on the substrate. Formed.

When the liquid repellency of this substrate was examined by a contact angle with respect to tetradecane, it was about 60 °. When the substrate has such a high liquid repellency, when a droplet is ejected by the ink jet method, the droplet easily moves and a bulge is easily generated, which may cause a disconnection.
Then, UV irradiation was performed for 1 minute with respect to the board | substrate, and the liquid repellency (contact angle with respect to tetradecane) of the board | substrate was reduced to about 30 degrees.

  In addition, as a liquid material ejected by the inkjet method, the dispersion medium of silver fine particle dispersion liquid (product name “Perfect Silver”, manufactured by Vacuum Metallurgical Co., Ltd.) in which silver fine particles with a diameter of 10 nm are dispersed in an organic solvent is replaced with tetradencan. This was prepared and further diluted to a concentration of 60 wt%, a viscosity of 8 cP, and a surface tension of 22 N / m. When the liquid obtained by such a process was discharged from a droplet discharge head at a discharge voltage of 20 V and a discharge amount of about 10 ng, the landing diameter when landed on the substrate (slide glass) was about 45 μm. .

  Under such conditions, the liquid material was discharged from the droplet discharge head as the first discharge step. In this first discharge step, first, as a first discharge process, the droplets that have landed have a pitch larger than the landing diameter when the droplets landed on the substrate (actually a pitch of 70 μm), that is, Discharging was performed at regular intervals so as not to contact each other on the substrate. Subsequently, drying was performed at 100 ° C. for 5 minutes in order to remove the dispersion medium. After that, the second discharge process was performed so as to fill the space between the droplets discharged in the first discharge process. As a result, a line having no bulge and a line width of about 45 μm could be produced.

Next, as a lyophobic process, the substrate (slide glass) and heptadecafluoro-1,1,2,2-tetrahydrodecyltriethoxysilane (about 100 μl) are again placed in a sealed container, and heat treated at 120 ° C. for 2 hours. A monomolecular film as a liquid repellent film was formed again at a place other than the above line.
Next, as a second ejection step, the liquid material was ejected from the droplet ejection head onto the line, and overcoating was performed twice. At this time, even when drawing was performed at a smaller discharge pitch (20 μm) than in the first discharge step, the liquid droplets were not spread on the substrate surface and could be drawn with high density on the line.
Thereafter, baking was performed at 300 ° C. for 30 minutes. As a result, a wiring pattern having a line width of about 45 μm and a film thickness of 2 μm was obtained.

When the specific resistance of the obtained wiring pattern was examined, it was about 5 μΩcm.
In addition, as a comparison, after the line drawing, without performing the liquid repellent film formation again in the liquid repellent process, the second discharge process was overcoated, and the wiring pattern obtained by baking at 300 ° C. for 30 minutes was The line width was about 55 μm and the film thickness was about 2 μm.
Therefore, the wiring pattern formed in Example 1 is formed with a sufficiently narrow line width as compared with the wiring pattern formed as a comparison, thus preventing wetting and spreading, thereby enabling miniaturization and high definition. It was confirmed that

(Example 2)
Translucent quartz was used for the substrate.
First, heptadecafluoro-1,1,2,2-tetrahydrodecyltriethoxysilane was attached to this substrate by a vapor phase method in the same manner as in Example 1 to form a monomolecular film. Subsequently, the substrate was subjected to UV irradiation for 1 minute. When the liquid repellency (contact angle with respect to tetradecane) of the substrate was examined, it was about 30 °.

Next, the silver fine particle dispersion was discharged as a first discharge step by an inkjet method in the same manner as in Example 1 to produce a line (wiring pattern) having a line width of about 45 μm.
Next, as shown in FIG. 5, the substrate was irradiated with UV for 10 minutes from the back surface (surface on which no line was formed).
Next, in the same manner as in Example 1, the substrate (slide glass) and heptadecafluoro-1,1,2,2-tetrahydrodecyltriethoxysilane (about 100 μl) were again placed in a sealed container and heat-treated at 120 ° C. for 2 hours. Then, a monomolecular film as a liquid repellent film was formed again at a place other than the line on the substrate.
Thereafter, the second discharge step and the firing step were performed in the same manner as in Example 1 to obtain a wiring pattern having a line width of about 45 μm and a film thickness of 2 μm.

When the specific resistance of the obtained wiring pattern was examined, it was about 5 μΩcm.
Moreover, the adhesive force with respect to the board | substrate of a wiring pattern was investigated by sticking an adhesive tape with respect to this wiring pattern, and peeling this adhesive tape after that.
When such a test for adhesion was performed on 10 wiring patterns, all 10 remained on the substrate without being peeled off together with the adhesive tape, and thus had good adhesion to the substrate. It was confirmed that
For comparison, when the same test was performed on the wiring pattern formed in Example 1, peeling was observed in two of the ten wiring patterns.

(A)-(c) is explanatory drawing of the formation method of the wiring pattern which concerns on this invention. (A) is a principal part perspective view of a droplet discharge head, (b) is a principal part sectional side view. (A)-(d) is explanatory drawing of a 1st discharge process and a drying process. It is a top view for demonstrating the discharge position in the 1st, 2nd discharge process. (A), (b) is a side view for demonstrating another embodiment of this invention. It is a disassembled perspective view which shows an example of the plasma display which concerns on this invention. It is a perspective view which shows an example of the electronic device which concerns on this invention. 1 is an exploded perspective view of a non-contact card medium according to the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Substrate, 2 ... FAS film (liquid repellent film), 3 ... Lower layer film pattern, 4 ... Liquid repellent film,
34 ... Droplet discharge head

Claims (13)

A film pattern forming method for forming a film pattern by discharging droplets containing a film component to a predetermined film forming region on a substrate,
A first discharge process for discharging the plurality of droplets at a pitch larger than the diameter of the droplets after landing on the substrate over the entire film formation region; and forming the plurality of droplets into the film A second discharge process that discharges at a pitch larger than the diameter of the droplets after landing on the substrate at a position different from the discharge position in the first discharge process in the entire region. When,
A drying step of drying the droplets discharged in the first discharge step to form a lower layer film pattern;
After the drying step, a liquid repellent treatment step of subjecting the substrate to a liquid repellent treatment;
A second discharge step of discharging a plurality of droplets onto the lower layer film pattern after the liquid repellent treatment step;
A film pattern forming method comprising: after the second ejection step, firing the lower layer film pattern and droplets on the lower layer film pattern to form a film pattern.   2. The film pattern forming method according to claim 1, wherein the droplet contains an organic substance.   2. The second discharge step, wherein among the continuously discharged liquid droplets, a liquid droplet discharged later is discharged so as to partially overlap the previously discharged liquid droplets. 3. A method for forming a film pattern according to 1 or 2.   4. The film pattern forming method according to claim 1, wherein a pitch in the second ejection process is substantially the same as a pitch in the first ejection process. 5.   5. The method for forming a film pattern according to claim 1, wherein a pitch in the first discharge step is not more than twice a diameter of a droplet after landing on the substrate. .   Before the first discharge step, there is a pretreatment step for adjusting the surface of the substrate on the film forming region side so that the contact angle with the droplet is 20 [deg] or more and 60 [deg] or less. The film pattern forming method according to claim 1, wherein the film pattern is formed.   The film pattern forming method according to claim 6, further comprising an irradiation step of irradiating the substrate with energy rays between the drying step and the liquid repellent treatment step.   8. The method of forming a film pattern according to claim 7, wherein the substrate is a light-transmitting substrate, and the energy rays are irradiated to the back surface side of the substrate.   The method of forming a film pattern according to claim 1, wherein the film component contains conductive fine particles.   A conductive film wiring formed by the film pattern forming method according to claim 9.   An electro-optical device comprising the conductive film wiring according to claim 10.   An electronic apparatus comprising the electro-optical device according to claim 11.   A non-contact card medium comprising the conductive film wiring according to claim 10 as an antenna circuit.

Images