JP2005175399A - Photovoltaic cell manufacturing method and photovoltaic cell - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing photovoltaic cells that reduce the electric resistance between the electrode and silicon substrate without deteriorating the appearance and a photovoltaic cell capable of highly efficient transformation. <P>SOLUTION: This photovoltaic cell manufacturing method comprises the first process for printing the paste electrode materials on the silicon substrate 10, the second process for forming electrodes by burning a silicon substrate with electrode materials printed, and the third process for flowing current through the electrodes. In addition, the photovoltaic cell C comprises the silicon substrate 10 and the first and second ctenoid electrodes 20 and 30 fixed on this silicon substrate 10 where the electric resistance between the silicon substrate 10 and the first and second comb electrodes 20 and 30 is maintained between 0.005 Ωcm<SP>2</SP>and 0.050 Ωcm<SP>2</SP>. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a solar battery cell and a solar battery cell.

  A solar battery cell is a photoelectric conversion element that generates light by converting light energy from the sun into electrical energy. Since light energy is infinite and solar cells are clean power sources that do not discharge harmful substances when generating electricity, they have recently been installed on the roofs of houses and the rooftops of buildings.

  In general, a solar cell in which a comb-shaped electrode is attached to a single crystal silicon substrate or a polycrystalline silicon substrate (hereinafter referred to as a silicon crystal solar cell) is widely used as a solar cell. The reason why silicon crystal solar cells are widely used is that the conversion efficiency for converting light energy into electric energy is higher than that of amorphous silicon solar cells and the like. Specifically, the conversion efficiency (cell conversion efficiency) of a silicon crystal solar cell is 13 to 18%. When the conversion efficiency of the solar cells is high, there is an advantage that when the same power is generated, the area occupied by the solar cells is reduced and it is easy to install.

  Such a solar battery cell is manufactured by applying a manufacturing technique of a semiconductor component such as a transistor or a diode. However, there are also manufacturing techniques specific to solar cells, and one of the specific manufacturing techniques is a technique for forming electrodes.

  The electrode of the solar battery cell has a comb-shaped (also called bone-like) pattern in order to efficiently extract the current generated in the solar battery cell to the outside, and this solar cell electrode is formed. In general, a method in which a paste-like electrode material containing silver (Ag), aluminum (Al), or the like is printed on a base silicon substrate and then baked is widely used.

  However, the method for forming the electrodes of the solar battery cells by printing and baking is suitable for mass production and has the advantage of less waste of materials, but has the following problems. That is, the electrical resistance (also referred to as contact resistance or contact resistance) between the electrode and the silicon substrate is high, and it is difficult to efficiently extract the current outside based on the potential difference generated in the solar battery cell. This is because the paste-like electrode material to be printed contains impurities such as glass frit, so that an oxide that is an insulator is easily formed between the silicon substrate and the electrode by firing.

Therefore, conventionally, a paste-like electrode material is printed and fired to form an electrode, and then a silicon substrate on which the electrode is formed is impregnated in a solder bath, and the electrode is coated with solder. That is, when the silicon substrate is impregnated in the solder bath, the solder penetrates into the porous electrode, destroying the oxide (resistor) between the electrode and the silicon substrate, or between the electrode and the silicon substrate. The electrical resistance between the electrode and the silicon substrate was reduced by filling the gap.
Solar cell module, light energy, solar cell and its application, Ohmsha, May 2002, p. 7-13

  However, when the silicon substrate on which the electrode is formed is impregnated in the solder bath, the silicon substrate is heated and cooled, and thus the silicon substrate may be damaged. In addition, since solder has a gloss and tends to cause unevenness, there is a problem that the appearance of the solar battery cell is remarkably deteriorated.

  Accordingly, the present invention provides a solar cell manufacturing method that can reduce the electrical resistance between the electrode and the silicon substrate without deteriorating the appearance, and a solar that can convert light energy into electrical energy with high efficiency. It is an object to provide a battery cell.

As means for solving the above problems, the present invention provides a first step of printing a paste-like electrode material on a silicon substrate, and a second step of firing the silicon substrate on which the electrode material is printed to form an electrode. And a third step of passing a current through the electrode. Moreover, it is a solar cell manufactured by this manufacturing method, Comprising: It is a solar cell provided with the silicon substrate and the electrode fixed to the said silicon substrate, Comprising: Between the said silicon substrate and the said electrode The solar cell is characterized in that the electric resistance is in the range of 0.005 Ωcm ² or more and 0.050 Ωcm ² or less.

  According to such a method for manufacturing a solar battery cell, it is possible to destroy the resistance portion between the electrode and the silicon substrate by flowing a current through the electrode without reducing the external appearance, thereby reducing the electric resistance. . Moreover, according to such a photovoltaic cell, sunlight energy can be converted into electric energy with high efficiency.

  According to the present invention, a solar cell manufacturing method that can reduce electrical resistance between an electrode and a silicon substrate without deteriorating the appearance, and a solar that can convert light energy into electrical energy with high efficiency. A battery cell can be provided.

Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. 1 to 8 as appropriate.
In the drawings to be referred to, FIG. 1 is a partially enlarged perspective view showing a solar battery cell according to this embodiment. FIG. 2 is a top view of the solar battery cell shown in FIG. FIG. 3 is a perspective view showing a silicon substrate having electrodes formed by printing and baking in the method for manufacturing a solar battery cell according to the present embodiment. FIG. 4 is a top view of the silicon substrate shown in FIG. FIG. 5 is a cross-sectional view showing a method for manufacturing a solar battery step by step in the XX cross section shown in FIG. 3. FIG. 6 is a perspective view schematically showing the stage of passing the current shown in FIG. FIG. 7 is a graph showing the relationship between the current density of the current flowing through the electrode and the electric resistance after the current is applied at the stage shown in FIG. FIG. 8 is a graph showing the relationship between the width of the electrode and the electric resistance after current application at the stage shown in FIG.

<Configuration of solar cell>
As shown in FIG.1 and FIG.2, the photovoltaic cell C is manufactured by the manufacturing method mentioned later, Comprising: The plate-shaped silicon substrate 10 which has the light-receiving surface 10a, and the back surface on the opposite side to the light-receiving surface 10a And a comb-shaped first comb-shaped electrode 20 and a comb-shaped second comb-shaped electrode 30. That is, in the solar battery cell C, the first comb-shaped electrode 20 and the second comb-shaped electrode 30 are arranged only on one surface of the silicon substrate 10, and the appearance on the light receiving surface 10a side is improved.

[Silicon substrate]
The silicon substrate 10 is formed of silicon single crystal or silicon polycrystal, and partially has an n-type high concentration impurity portion 11 (hereinafter referred to as an n-type high concentration portion) and a p-type high concentration impurity portion on the back side thereof. 12 (hereinafter referred to as a p-type high concentration portion). In the present embodiment, the silicon substrate 10 is p-type as one conductivity type, but is not limited to this and may be n-type. Here, a silicon substrate body 13 is obtained by removing the n-type high concentration portion 11 and the p-type high concentration portion 12 from the silicon substrate 10.

  Each of the n-type high concentration portion 11 and the p-type high concentration portion 12 has a comb shape in plan view (see FIGS. 3 and 4), and the n-type high-concentration portion 11a of the n-type high concentration portion 11 and p It arrange | positions so that the p-type comb-tooth part 12a of the type | mold high concentration part 12 may mesh | engage at predetermined intervals. That is, the n-type comb tooth portions 11a and the p-type comb tooth portions 12a are alternately arranged in the width direction. The n-type pattern portion 11b of the n-type high concentration portion 11 and the p-type pattern portion 12b of the p-type high concentration portion 12 are arranged in parallel at a predetermined interval.

The n-type high concentration portion 11 has a base of impurity atoms (donors) such as pentavalent phosphorus (P), arsenic (As), and antimony (Sb) at a concentration of about 5 × 10 ²⁰ atoms / cm ³ , for example. The silicon substrate 10 is formed by being mixed (doped) with a predetermined depth. The n-type high concentration portion 11 has free electrons inside. Further, by fixing the n-type high concentration portion 11 mixed with impurity atoms to the first comb electrode 20 in this way, the contact resistance with the first comb electrode 20 can be reduced. The same applies to the p-type high concentration portion 12 described below.

  In the p-type high concentration portion 12, impurity atoms (acceptors) such as trivalent boron (B), gallium (Ga), and aluminum (Al) are mixed into the base silicon substrate 10 at a predetermined depth. The p-type high concentration part 12 has a hole (hole) inside.

  Therefore, the solar cell C has a comb-shaped pn junction surface JS on the surface where the n-type high concentration portion 11 and the p-type silicon substrate body 13 are joined (see FIG. 5 (c)).

[First comb electrode]
The first comb-shaped electrode 20 has a comb shape in plan view (see FIG. 2), and the back surface side of the silicon substrate 10 extends along the center position in the width direction of the comb-shaped n-type high concentration portion 11 described above. It is fixed to. The first comb electrode 20 is made of a conductive material such as silver (Ag), aluminum (Al), or an alloy thereof.

  The first comb-shaped electrode 20 includes a plurality of first finger portions 21 corresponding to comb-tooth portions and first bus bar portions 22 that connect the first finger portions 21.

(First finger part)
Each first finger portion 21 is fixed along the n-type comb tooth portion 11a of the n-type high concentration portion 11. The electrical resistance (contact resistance) at the interface between each first finger portion 21 and the n-type comb tooth portion 11a, that is, the joint surface, is within a range of 0.005 Ωcm ² or more and 0.050 Ωcm ² or less with respect to the joint surface area. (Preferable range, see FIG. 7), and preferably within a range of 0.005 Ωcm ² or more and 0.015 Ωcm ² or less (optimal range, see FIG. 7). If it is in the range of such an electrical resistance, between the 1st finger part 21 and the n-type comb-tooth part 11a, it can energize suitably and the electric current generated based on sunlight will be sent to each finger. The part 21 can collect current.

(1st busbar part)
The first bus bar portion 22 includes a plurality of first bus bar bases 22a and first conductive wires 22b.
The plurality of first bus bar bases 22 a are fixed at predetermined intervals along the n-type pattern portion 11 b of the n-type high concentration portion 11. The electrical resistance at the interface (joint surface) between each first bus bar base 22a and n-type handle portion 11b is in the range of 0.005 Ωcm ² or more and 0.050 Ωcm ² or less, as with the first finger portion 21 described above. (Preferable range), and more preferably in the range of 0.005 Ωcm ² or more and 0.015 Ωcm ² or less (optimum range).

The first conductive wire 22b is formed of a conductive material such as copper, and connects each first bus bar base 22a and one end of each first finger portion 21 with solder or the like. In addition, the 1st conducting wire 22b is used also as a terminal connected with another photovoltaic cell, when a photovoltaic cell module (not shown) is comprised using the several photovoltaic cell C. As shown in FIG.
Therefore, the first conductive wire 22b is not only electrically connected to the n-type pattern portion 11b (n-type high concentration portion 11) via each first bus bar base 22a, but also n-type comb teeth via each first finger portion 21. The portion 11a (the n-type high concentration portion 11) is also electrically connected, and the current collected by each finger portion 21 can be further collected and output.

[Second comb electrode]
The second comb electrode 30 has a comb shape like the first comb electrode 20, and is formed of a conductive material such as silver or aluminum. The second comb-shaped electrode 30 is fixed to the back surface side of the silicon substrate 10 along the comb-shaped p-type high concentration portion 12 described above.
The second comb-shaped electrode 30 includes a plurality of second finger portions 31 and a second bus bar portion 32 that connects the second finger portions 31. Each second finger portion 31 is fixed to the p-type comb tooth portion 12a of the above-described comb-shaped p-type high concentration portion 12, and the electric resistance at the interface is 0.005 Ωcm ² or more and 0.050 Ωcm ² or less. It is preferably within the range (preferable range), and more preferably within the range of 0.005 Ωcm ² or more and 0.015 Ωcm ² or less (optimum range).

Similar to the first bus bar portion 22, the second bus bar portion 32 includes a plurality of second bus bar bases 32 a and second conductive wires 32 b.
The plurality of second bus bar bases 32a are fixed at predetermined intervals along the p-type pattern portion 12b of the comb-shaped p-type high concentration portion 12, and the resistance at the interface is 0.005 Ωcm ² or more and 0.00. It is preferably in the range of 050 Ωcm ² or less (preferable range), and more preferably in the range of 0.005 Ωcm ² or more and 0.015 Ωcm ² or less (optimum range).
Moreover, the 2nd conducting wire 32b is formed from the electroconductive material, and is being fixed so that the one end part of each 2nd bus-bar base 32a and each 2nd finger part 31 may be connected.
Accordingly, the second conductive wire 32 b is electrically connected to the p-type high concentration portion 12 via each second bus bar base 32 a and each second finger portion 31.

<Operation of solar cell>
Next, the operation of the solar battery cell C will be briefly described with reference to FIG. Here, a description will be given of a case where terminals of an external circuit (not shown) having a load (not shown) are connected to the first comb electrode 20 and the second comb electrode 30, respectively.

When sunlight is applied to the light receiving surface 10a of the solar battery cell C and reaches the internal pn junction surface JS, the holes and electrons that have been combined in the pn junction surface JS are separated. The separated electrons move toward the n-type high concentration portion 11, while the separated holes move toward the p-type high concentration portion 12. Then, a potential difference is generated between the n-type high concentration portion 11 and the p-type high concentration portion 12 so that the potential of the p-type high concentration portion 12 becomes high.
Therefore, the second comb-shaped electrode 30 connected to the p-type high concentration portion 12 is a positive pole, and the first comb-shaped electrode 20 connected to the n-type high concentration portion 11 is a negative pole, so that an external circuit (not shown) is provided. Current flows.

In this current flow, as described above, the electrical resistance at the joint surface between the first finger portion 21 and the first bus bar base 22a of the first comb electrode 20 and the n-type high concentration portion 11, the second comb electrode 30 The electrical resistance at the joint surface between the second finger portion 31 and the second bus bar base 32a and the p-type high concentration portion 12 is 0.005 Ωcm ² or more and 0.050 Ωcm ² or less, respectively. Current flows based on the generated potential difference. That is, according to the solar battery cell C, light energy can be converted into electric energy with higher efficiency (about twice as much) as in the past.

<Solar cell manufacturing method>
Then, the manufacturing method of the photovoltaic cell C which concerns on this embodiment is demonstrated with reference to FIGS.

The manufacturing method of the photovoltaic cell C includes a high-concentration impurity portion forming step for forming an n-type high-concentration portion 11 and a p-type high-concentration portion 12 on the back side of a p-type silicon substrate serving as a base, and printing an electrode material. A printing step (first step), a firing step (second step) for firing the silicon substrate on which the electrode material is printed, and an energization step (third step) for energizing the formed electrode, A bus bar portion forming step for forming the bus bar portion.
Hereinafter, each step will be described in detail.

[High concentration impurity formation process]
First, an n-type high concentration is formed by doping phosphorus (P) or the like into a predetermined region on the back surface side of the silicon substrate 10 which is made of silicon single crystal or silicon polycrystal and is prepared to be p-type, for example, by a thermal diffusion method. The part 11 is mixed with boron (B) or the like to form the p-type high concentration part 12 (see FIGS. 3 and 4).

[Printing process]
Then, for example, a paste-like electrode material containing silver (Ag) or the like is formed on the n-type high concentration portion 11 by using the first finger portion 21 and the first bus bar base 22a and the p-type high concentration portion 12 by screen printing. The 2nd finger part 31 and the 2nd bus bar stand 32a are printed, respectively (refer to Drawing 3 and Drawing 4).
Here, the width (d1) of the first bus bar base 22a and the width (d2) of the second bus bar base 32a are each printed to be 0.2 mm or less (see FIG. 4). In addition, it prints so that the width | variety of the 1st finger part 21 and the 2nd finger part 31 may also be 0.2 mm or less.

[Baking process]
Then, the silicon substrate 10 on which the electrode material is printed is baked at a predetermined temperature and a predetermined time. After firing, the interface between each first finger part 21 and each first bus bar base 22a and the n-type high concentration part 11, and each second finger part 31 and each second bus bar base 32a and the p-type high concentration part 12 A resistance portion R made of an insulator such as silicon oxide (SiO ₂ ) or silver oxide (AgO) is generated at the interface as in the conventional case (see FIG. 5A).

[Energization process]
Therefore, in the method for manufacturing the solar battery cell C according to the present embodiment, the resistance portion R is destroyed by an energization process described below.

(Energization to the 1st finger part and the 2nd finger part)
First, the case where the insulation part R between the 1st finger part 21 and the n-type comb-tooth part 11a and the resistance part R between the 2nd finger part 31 and the p-type comb-tooth part 12a are destroyed is demonstrated. Here, as described above, the first finger portions 21 and the second finger portions 31 are alternately arranged in the width direction. From the first finger part 21 and the second finger part 31 arranged in this way, a pair of adjacent first finger parts 21 and second finger parts 31 are selected.

  Next, as shown in FIGS. 5B and 6, the selected pair of first finger portions 21 and second finger portions 31 are supplied with current from a current generator 41 capable of generating alternating current or pulse current. Energize.

In this energization, as shown in FIGS. 5B and 6, the terminal 43 connected to the current generator 41 is brought into contact with a substantially central position in the longitudinal direction of the first finger portion 21. Similarly, the terminal 42 connected to the current generator 41 is brought into contact with the approximate center position of the second finger portion 31 in the longitudinal direction. In this state, with the terminal 42 and the terminal 43 in contact with each other, an alternating current or a pulse current is passed from the current generator 41. Then, as shown in FIG. 6, the first finger portion 21 and the second finger portion 31 In the meantime, in the longitudinal direction of the first finger portion 21 and the first finger portion 31, the current flows so as to be evenly distributed without being offset (see arrow A <b> 1). When current flows in this way, the arrangement of atoms and electrons such as silicon oxide (SiO ₂ ) and silver oxide (AgO) that form the resistance portion R changes, and as a result, the resistance portion R is destroyed. Therefore, the resistance portion R loses resistance (insulating property), and as shown in FIG. 5C, the resistance portion R disappears, and between the first finger portion 21 and the n-type comb tooth portion 11a. The electrical resistance and the electrical resistance between the second finger portion 31 and the p-type comb tooth portion 12a can be 0.005 Ωcm ² or more and 0.050 Ωcm ² or less, respectively.

  Further, in this energization, the frequency of the current to be energized is preferably in the range of 50 to 100 Hz. If the frequency is lower than 50 Hz, the silicon substrate 10 generates heat. On the other hand, if the frequency is higher than 100 Hz, the resistance portion R cannot be sufficiently destroyed.

In this energization, the current density of the energized current is set to 0.1 A / mm ² or more at the joint surface where the first finger portion 21 and the n-type comb tooth portion 11 a are joined, so that the electric resistance is 0. .005Omucm ² more 0.050Omucm ² within the following ranges can be (preferable range). This is because if the current density is smaller than 0.1 A / mm ² , the electrical resistance after energization is not suitably reduced as shown in FIG. The same applies to the second finger portion 31.
Further, by making the current density 0.24A / mm ² or more, it may be in the range of electrical resistance of 0.005Omucm ² more 0.015Omucm ² or less (optimum range).

  In addition, the resistance portion R can be destroyed by energizing for about 10 seconds at most. Thus, since the resistance part R can be destroyed by energization for an extremely short time, it is preferable that the current to be energized is pulsed.

  By repeating such an operation as appropriate, the resistance portion R between the first finger portion 21 and the n-type comb tooth portion 11a and the resistance portion R between the second finger portion 31 and the p-type comb tooth portion 12a are reduced. , Destroy everything.

(Energization to the first bus bar stand)
Next, the resistance portion near the interface between the first bus bar base 22a and the n-type handle portion 11b (high concentration impurity portion 11) is destroyed. In this destruction, two adjacent first bus bar bases 22a are selected from a plurality of first bus bar bases 22a arranged in a line, and the terminals 42 and 43 are selected for the two selected first bus bar bases 22a. Are brought into contact with each other and current is supplied from the current generator 41 (see arrow A2 shown in FIG. 6), whereby the resistance portion can be destroyed.
In addition, since the width (d1) of the first bus bar base 22a is 0.2 mm or less, the current is not offset and the current is not energized, and the resistance portion is suitably destroyed. That is, if the width of the first bus bar base 22a is larger than 0.2 mm, current tends to flow in a portion where the resistance portion is not formed, the resistance portion is less likely to be broken, and the electric resistance after energization is reduced. This is because they do not (see FIG. 8).
Next, in the second bus bar base 32a as well, a current is passed in the same manner to destroy the resistance portion.

[Bus bar part forming process]
And the 1st conducting wire 22b is fixed with solder etc. so that a plurality of 1st bus-bar stand 22a and a plurality of 1st finger parts 21 may be connected. Moreover, the 2nd conductor 32b is fixed so that the 2nd bus-bar base 22a and the some 2nd finger part 21 may be connected. In this way, the solar battery cell C can be manufactured.

  Therefore, according to the manufacturing method of the photovoltaic cell C according to the present embodiment, the silicon substrate 10 does not need to be heated and cooled, so that the silicon substrate 10 is not damaged. Further, since no solder is used, the appearance of the solar battery cell C is not deteriorated.

  As mentioned above, although an example was described about suitable embodiment of this invention, this invention is not limited to the said embodiment, In the range which does not deviate from the meaning of this invention, it can change suitably.

  In the above-described embodiment, the solar cell C has the first comb electrode 20 and the second comb electrode 30 fixed to one side of the silicon substrate 10, but the present invention is not limited to this. The first comb electrode 20 and the second comb electrode 30 may be fixed to both surfaces of the silicon substrate 10, respectively.

  In the above-described embodiment, when destroying the resistance portion R, a pair of adjacent first finger portions 21 and second finger portions 31 are selected, but a plurality of first finger portions 21 and second finger portions 31 are selected. The resistor portion R may be destroyed by selecting and connecting in series to flow current.

  Hereinafter, based on an Example, this invention is demonstrated further more concretely.

The width of the first finger portion 21 and the second finger portion 31 was 0.2 mm, the length was 50 mm, and a current of 10 A was passed from the current generator 41 for 0.1 second. That is, the current density was 1.0 A / mm ² . Then, the electrical resistance between the first finger portion 21 and the n-type comb tooth portion 11a (n-type high concentration portion 11) is changed from 0.2 Ωcm ² to 0.01 Ωcm ² , and the second finger portion 31 and the p-type comb tooth. The electric resistance between the portion 12a (p-type high concentration portion 12) could be reduced from 0.25 Ωcm ² to 0.011 Ωcm ² .

It is a perspective view which expands and shows the photovoltaic cell which concerns on this embodiment partially. It is a top view of the photovoltaic cell shown in FIG. It is a perspective view which shows the silicon substrate which has the electrode formed by printing and baking in manufacture of the photovoltaic cell concerning this embodiment. FIG. 4 is a top view of the silicon substrate shown in FIG. 3. FIG. 4 is a cross-sectional view showing stepwise the method for manufacturing a solar battery cell according to the present embodiment in the XX cross section shown in FIG. 3. It is a perspective view which shows typically the step which sends the electric current shown in FIG.5 (b). It is a graph which shows the relationship between the current density of the electric current sent through an electrode in the step shown in FIG.5 (b), and the electrical resistance after electric current supply. It is a graph which shows the relationship between the width | variety of an electrode and the electrical resistance after current supply in the step shown in FIG.5 (b).

Explanation of symbols

C solar cell 10 silicon substrate 11 n-type high concentration portion 12 p-type high concentration portion 20 first comb electrode 21 first finger portion 22 first bus bar portion 22a first bus bar base 22b first conductor 30 second comb electrode 31 2nd finger part 32 2nd bus bar part 32a 2nd bus bar base 32b 2nd conducting wire 41 Current generator 42 Terminal 43 terminal JS pn junction surface R Resistance part

Claims (6)

A first step of printing a paste-like electrode material on a silicon substrate;
A second step of baking the silicon substrate on which the electrode material is printed to form an electrode;
A third step of passing a current through the electrode;
The manufacturing method of the photovoltaic cell characterized by having. ^{2. The} method for manufacturing a solar cell according to claim 1, wherein a current density of the current is 0.1 A / mm ² or more in a contact area between the electrode and the silicon substrate.   The method for manufacturing a solar battery cell according to claim 1, wherein the current is a pulse current.   4. The method for manufacturing a solar cell according to claim 1, wherein, in the first step, a width of an electrode material to be printed is set to 0.2 mm or less. 5. A solar cell comprising a silicon substrate and an electrode fixed to the silicon substrate,
The electrical resistance between the silicon substrate and the electrode is 0.050 Ωcm ² or less,
A solar battery cell manufactured by the method for manufacturing a solar battery cell according to any one of claims 1 to 4. 6. The solar cell according to claim 5, wherein an electrical resistance between the silicon substrate and the electrode is 0.005 Ωcm ² or more.

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