JP2005175157A - Manufacturing method of organic thin film integrated circuit, and of field effect transistor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an FET which does not need to use a resist material for forming a desired shape, and which does not require a mask for passing through organic thin film material etc. <P>SOLUTION: The manufacturing method of the FET is provided with steps of: forming a gate electrode 12 on a base body 11, a step of thereafter forming a gate insulation film 13 on the base body 11 and the gate electrode 12; next forming source/drain electrodes 14 on the gate insulation film 13; thereafter forming an organic semiconductor thin film 15 on the whole surface; and next removing a part of the thin film 15 irradiated with energy beams only by irradiating the thin film 15 with the energy beams. Accordingly, the thin film 15 remains at the gate insulation film 13 between the source/drain electrodes 14 and on the source/drain electrodes 14, and a channel forming area 16 consisting of the thin film is formed. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing an organic thin film integrated circuit and a method for manufacturing a field effect transistor.

  When manufacturing a semiconductor device from a conventional silicon semiconductor substrate or the like, a photolithography technique and various thin film forming techniques are used. However, these production techniques are complicated, require a long time for manufacturing the semiconductor device, and are a great obstacle to reducing the manufacturing cost of the semiconductor device. Further, the conventional semiconductor device is so-called bulk, and it is difficult to apply it to a field where flexibility and flexibility are required. Furthermore, as symbolized by Moore's Law, the limits of speeding up (accumulation) are becoming visible.

  Research and development of an electronic element that replaces a semiconductor device based on such a conventional silicon semiconductor substrate, such as a field effect transistor (FET), using an electroconductive polymer material has been eagerly advanced. In addition, a new field of inexpensive plastic electronics is being developed.

  So-called organic field effect transistors in which a channel formation region is composed of an organic semiconductor layer are well known from, for example, Japanese Patent Laid-Open Nos. 10-270712 and 2000-269515.

  An outline of an example of a method for manufacturing a conventional organic field effect transistor (organic TFT) will be described below with reference to FIGS. 7A to 7C and FIGS. 8A to 8C.

[Step-10A]
First, after the gate electrode 12 is formed on the base 11 provided on the support 10, the gate insulating film 13 is formed on the base 11 and the gate electrode 12. Next, source / drain electrodes 14 are formed on the gate insulating film 13. In this way, the structure shown in FIG. 7A can be obtained.

[Step-20A]
Thereafter, an organic semiconductor thin film 115 is formed on the entire surface (see FIG. 7B). When the organic semiconductor thin film 115 is made of pentacene, the organic semiconductor thin film 115 can be formed by a vacuum evaporation method.

[Step-30A]
Next, a resist layer 131 is formed on the organic semiconductor thin film 115 in order to pattern the organic semiconductor thin film 115 (see FIG. 7C). The resist layer 131 made of polyvinyl alcohol (PVA) can be formed by, for example, a spin coating method. Next, the resist layer 131 is patterned based on the lithography technique (see FIG. 8A). Specifically, ultraviolet light may be used for the exposure of the resist layer 131 made of PVA, and pure water may be used for the development of the resist layer 131.

[Step-40A]
Then, by patterning the organic semiconductor thin film 115 by an ashing process using oxygen plasma using the patterned resist layer 131 as an etching mask, a portion of the gate insulating film 13 between the source / drain electrodes 14, and The organic semiconductor thin film 115 is left on the source / drain electrode 14 to form a channel formation region 116 made of the organic semiconductor thin film 115 (see FIG. 8B).

[Step-50A]
Thereafter, the resist layer 131 is removed by immersing the resist layer 131 in an organic solvent or an aqueous solvent. Thus, an organic field effect transistor (organic TFT) shown in FIG. 8C can be obtained.

  Alternatively, an organic field effect transistor (organic TFT) can be manufactured by a manufacturing method described below with reference to FIGS. 9A and 9B.

[Step-10B]
First, after the gate electrode 12 is formed on the base 11 provided on the support 10, the gate insulating film 13 is formed on the base 11 and the gate electrode 12. Next, source / drain electrodes 14 are formed on the gate insulating film 13. Thus, a structure similar to that shown in FIG. 7A can be obtained.

[Step-20B]
Next, the mask 133 to which the pattern of the organic semiconductor thin film to be formed is transferred is mechanically fixed above the region where the organic semiconductor thin film is to be formed (specifically, the portion where the channel forming region is to be formed). (See FIG. 9A). The mask 133 can be manufactured by forming a through hole 133A in a metal plate, a silicon semiconductor substrate, or the like.

[Step-30B]
Then, for example, based on a vacuum deposition method, an organic thin film material is formed on the gate insulating film 13 and the source / drain electrodes 14 through the mask 133 to form the organic semiconductor thin film 215 (see FIG. 9B). ), The mask 133 is removed.

JP 10-270712 A JP 2000-269515 A

  However, when the resist layer 131 is formed on the organic semiconductor thin film 115 in [Step-30A], the organic semiconductor thin film 115 is deteriorated by the organic solvent or water that is a solvent contained in the resist material constituting the resist layer 131. Resulting in. In addition, the ultraviolet light irradiated to sensitize the resist layer 131 reaches the organic semiconductor thin film 115 and degrades the organic semiconductor thin film 115. Furthermore, in the above [Step-50A], the resist layer 131 is immersed in an organic solvent or an aqueous solvent in order to remove the resist layer 131, but this also deteriorates the organic semiconductor thin film 115.

  Further, although the mask 133 is mechanically fixed in [Step-20B], the mask 133 is liable to be displaced due to vibrations before or during the deposition of the organic thin film material. For this reason, it is necessary to secure a large alignment margin in anticipation of positional deviation in pattern design. Therefore, it is difficult to increase the degree of pattern integration. Also, if there is a large gap between the mask 133 and the substrate 11, the organic thin film material wraps under the mask 133, so that the pattern outline of the obtained organic semiconductor thin film 215 is blurred. If the mask 133 is brought into mechanical contact with the substrate 11 in order to narrow the gap between the mask 133 and the substrate 11, the mask 133 may damage the substrate. Furthermore, the organic thin film material adheres to the inner surface of the through-hole of the mask 133 with repeated use, and the opening size of the through-hole changes or the through-hole is buried, so that a fine pattern can maintain accuracy. It becomes difficult.

  Accordingly, an object of the present invention is to provide an organic thin film integrated circuit manufacturing method that does not require the use of a resist material to form a desired shape and does not require the use of a mask for allowing the organic thin film material or the like to pass therethrough. And a method of manufacturing a field effect transistor.

  In order to achieve the above object, the organic thin film integrated circuit manufacturing method of the present invention irradiates the organic thin film constituting the organic thin film integrated circuit with an energy beam, thereby irradiating the portion of the organic thin film irradiated with the energy beam. It is characterized by removing.

The method for producing a field effect transistor according to the first aspect of the present invention for achieving the above object is a so-called bottom gate type and bottom contact type thin film transistor production method,
(A) forming a gate electrode on the substrate;
(B) forming a gate insulating film on the substrate and the gate electrode;
(C) forming a source / drain electrode on the gate insulating film; and
(D) After forming an organic semiconductor thin film on the entire surface, the organic semiconductor thin film is irradiated with energy rays to remove the portion of the organic semiconductor thin film irradiated with the energy rays, thereby insulating the gate between the source / drain electrodes. Leaving a portion of the film and the organic semiconductor thin film on the source / drain electrodes to obtain a channel forming region made of the organic semiconductor thin film;
It is characterized by comprising.

The method for producing a field effect transistor according to the second aspect of the present invention for achieving the above object is a so-called bottom gate type and top contact type thin film transistor production method,
(A) forming a gate electrode on the substrate;
(B) forming a gate insulating film on the substrate and the gate electrode;
(C) After forming the organic semiconductor thin film on the entire surface, irradiating the organic semiconductor thin film with energy rays to remove the portion of the organic semiconductor thin film irradiated with the energy rays, thereby forming a channel forming region comprising the organic semiconductor thin film And obtaining
(D) forming a source / drain electrode on the organic semiconductor thin film;
It is characterized by comprising.

The method for producing a field effect transistor according to the third aspect of the present invention for achieving the above object is a so-called top gate type and top contact type thin film transistor production method,
(A) Forming an organic semiconductor thin film on a substrate, and then irradiating the organic semiconductor thin film with energy rays to remove portions of the organic semiconductor thin film irradiated with the energy rays, thereby forming a channel composed of the organic semiconductor thin film. Obtaining a region;
(B) forming a source / drain electrode on the organic semiconductor thin film;
(C) forming a gate insulating film on the entire surface; and
(D) forming a gate electrode on the gate insulating film;
It is characterized by comprising.

The method for producing a field effect transistor according to the fourth aspect of the present invention for achieving the above object is a so-called top gate type and bottom contact type thin film transistor production method,
(A) forming source / drain electrodes on the substrate;
(B) After forming the organic semiconductor thin film on the entire surface, irradiating the organic semiconductor thin film with energy rays to remove the portion of the organic semiconductor thin film irradiated with the energy rays, thereby forming a channel forming region made of the organic semiconductor thin film Obtaining a step,
(C) forming a gate insulating film on the entire surface; and
(D) forming a gate electrode on the gate insulating film;
It is characterized by comprising.

  The organic thin film integrated circuit manufacturing method of the present invention, or the field effect transistor manufacturing methods according to the first to fourth aspects of the present invention (hereinafter, these may be collectively referred to simply as the present invention). In that case, by irradiating the organic thin film or organic semiconductor thin film with energy rays, the portion of the organic thin film or organic semiconductor thin film irradiated with the energy rays is removed. "Things include, for example, a mode in which an organic thin film or an organic semiconductor thin film is irradiated with energy rays without forming a mask layer made of a resist material or the like for shielding energy rays on the organic thin film or the organic semiconductor thin film. It is. Further, the organic thin film or the organic semiconductor thin film is removed, but this removal is preferably performed only by irradiation with energy rays, and other operations are unnecessary. As a form of removal of the organic thin film or organic semiconductor thin film portion irradiated with the energy beam, a form of sublimating the organic thin film or the organic semiconductor thin film, a form of decomposing the organic thin film or the organic semiconductor thin film, a vaporization of the organic thin film or the organic semiconductor thin film Examples include a form in which the organic thin film or the organic semiconductor thin film is reacted.

  As an energy ray irradiation method in the present invention, a method of irradiating an organic thin film or an organic semiconductor thin film collectively with an energy ray through an energy ray shielding mask disposed above the organic thin film or the organic semiconductor thin film, or For example, a method of sequentially irradiating an organic thin film or an organic semiconductor thin film with energy rays according to the pattern of the channel formation region can be exemplified. By adopting these methods, the portion of the organic thin film or organic semiconductor thin film irradiated with the energy beam can be selectively removed. In the former method, as an energy ray shielding mask, for example, a glass plate, a quartz plate, a plastic film, a plastic plate, a metal plate, etc. are formed with a region that transmits energy rays and a region that shields energy rays. What is necessary is just to use the made mask. Further, as the latter method, specifically, a method of irradiating an organic thin film or an organic semiconductor thin film while sequentially stepping an energy beam (more specifically, a stage on which a substrate is placed is a predetermined distance). And a method of irradiating an organic thin film or an organic semiconductor thin film by two-dimensional scanning in combination with a so-called raster scanning method or a so-called vector scanning method. Examples of energy rays include electromagnetic waves such as ultraviolet rays including laser, visible light including laser, electron beam, and X-ray.

  In the field effect transistor manufacturing method according to the first aspect of the present invention, in the step (D), the field effect transistor manufacturing method according to the second aspect of the present invention is described above. In the step (C), the method for producing a field effect transistor according to the third aspect of the present invention includes the method for producing the field effect transistor according to the fourth aspect of the present invention in the step (A). In the step (B) or in the method for producing an organic thin film integrated circuit of the present invention, the organic semiconductor thin film or the organic thin film is irradiated with ultraviolet rays as energy rays, and is irradiated with ultraviolet rays by sublimation. It is preferable to remove the organic semiconductor thin film or the organic thin film portion. And in this invention containing these structures, pentacene, naphthalene, anthracene, naphthacene, coronene, benzopyrene, and triphenylene can be mentioned as an organic semiconductor thin film or the material which comprises an organic thin film.

  Depending on the organic semiconductor thin film or the material constituting the organic thin film as a method for forming the organic semiconductor thin film or the organic thin film, a physical vapor deposition method (PVD method) exemplified by a vacuum deposition method; Examples thereof include a growth method (CVD method); a spin coating method; a printing method such as a screen printing method and an ink jet printing method; various coating methods such as a nanoimprint method and an immersion method; and a spray method.

  In the method of manufacturing a field effect transistor according to the present invention, platinum (Pt), gold (Au), palladium (Pd), chromium (Cr), nickel (Ni) are used as materials constituting the gate electrode and the source / drain electrode. ), Aluminum (Al), silver (Ag), tantalum (Ta), tungsten (W), titanium (Ti), copper (Cu), indium (In), tin (Sn), etc., or these metals Examples include alloys containing elements, conductive particles made of these metals, and conductive particles of alloys containing these metals, and a layered structure of layers containing these elements can also be used. Furthermore, an organic material such as poly (3,4-ethylenedioxythiophene) / polystyrene sulfonic acid [PEDOT / PSS] can also be used as a material constituting the gate electrode and the source / drain electrode. As a method of forming the gate electrode, source / drain electrode, and wiring, depending on the material constituting these electrodes, a combination of PVD method and etching technology exemplified by vacuum deposition method and sputtering method; Combination of etching technology; Combination of spin coating method and etching technology; Printing method such as screen printing method and inkjet printing method; Combination of various coating methods and etching technology described above; Lift-off method; Shadow mask method; A combination with an etching technique can be mentioned.

As materials constituting the gate insulating film, not only inorganic insulating materials exemplified by SiO ₂ , SiN, spin-on-glass (SOG), metal oxide high dielectric insulating film, but also polymethyl methacrylate (PMMA), Organic insulating materials exemplified by polyvinyl phenol (PVP) and polyvinyl alcohol (PVA) can be mentioned, and combinations thereof can also be used. As a method for forming a gate insulating film, PVD method exemplified by vacuum deposition method and sputtering method; various CVD methods; spin coating method; printing method such as screen printing method and inkjet printing method; various coating methods described above; dipping method; Any of a casting method and a spray method can be mentioned. In some cases, the surface of the gate electrode can be formed by oxidation or nitridation. As a method for oxidizing the surface of the gate electrode, although depending on the material constituting the gate electrode, an oxidation method using O ₂ plasma and an anodic oxidation method can be exemplified. Further, as a method of nitriding the surface of the gate electrode, although it depends on the material constituting the gate electrode, a nitriding method using N ₂ plasma can be exemplified. Alternatively, for example, for a gate electrode made of Au, an insulating molecule having a functional group capable of forming a chemical bond with the gate electrode, such as a linear hydrocarbon modified at one end with a mercapto group Thus, the gate insulating film can be formed on the surface of the gate electrode by coating the surface of the gate electrode in a self-organized manner by a method such as immersion.

  Examples of the substrate include various glass substrates, various glass substrates having an insulating layer formed on the surface, a quartz substrate, a quartz substrate having an insulating layer formed on the surface, and a silicon substrate having an insulating layer formed on the surface. it can. Furthermore, examples of the substrate include a plastic film, a plastic sheet, and a plastic substrate made of a polymer material exemplified by polyethersulfone (PES), polyimide, polycarbonate, and polyethylene terephthalate (PET). If a substrate made of such a flexible polymer material is used, for example, a field effect transistor can be incorporated or integrated into a display device or electronic device having a curved shape.

  In the method for manufacturing an organic thin film integrated circuit of the present invention, the organic thin film constituting the organic thin film integrated circuit is irradiated with energy rays, thereby removing the portion of the organic thin film irradiated with the energy rays. Moreover, in the manufacturing method of the field effect transistor which concerns on the 1st aspect-4th aspect of this invention, the part of the organic-semiconductor thin film irradiated to the energy ray is irradiated by irradiating an energy ray to an organic-semiconductor thin film. Remove. Therefore, in the selective removal of the organic semiconductor thin film and the organic thin film, or in the formation of the channel forming region made of the organic semiconductor thin film, a mask layer made of a resist material for shielding energy rays is used as the organic semiconductor thin film or There is no need to form it on an organic thin film. Therefore, it is possible to reliably suppress the deterioration of the characteristics of the organic semiconductor thin film and the organic thin film due to the formation and removal of the mask layer made of the resist material, or the deterioration of the characteristics of the channel formation region made of the organic semiconductor thin film. it can.

  In addition, it is not necessary to use a mask for allowing the organic semiconductor thin film or the material constituting the organic thin film to pass therethrough. Even if a mask is used, it is a mask for selectively passing energy rays. Therefore, even if the distance between the substrate and the mask is sufficiently wide, the organic thin film material can be prevented from flowing under the mask. Furthermore, the organic thin film material adheres to the inner surface of the through-hole of the mask with repeated use, and the opening size of the through-hole changes or the through-hole is buried, and it is difficult to maintain accuracy as the pattern becomes finer. There is no such thing as.

  As a result, organic thin film integrated circuits or field-effect transistors can be integrated and manufactured with high yield at a high density with a small number of processes.

  Hereinafter, the present invention will be described based on examples with reference to the drawings.

  Example 1 relates to a method for manufacturing an organic thin film integrated circuit according to the present invention and a method for manufacturing a field effect transistor (hereinafter abbreviated as FET) according to the first aspect of the present invention. FIG. 3B shows a schematic partial cross-sectional view of the FET obtained by cutting the FET obtained by the FET manufacturing method of Example 1 on a virtual vertical plane perpendicular to the extending direction of the gate electrode.

The FET obtained by the FET manufacturing method of Example 1 is a so-called bottom gate type and bottom contact type TFT,
(A) a gate electrode 12 formed on the substrate 11;
(B) a gate insulating film 13 formed on the gate electrode 12;
(C) a source / drain electrode 14 formed on the gate insulating film 13, and
(D) a channel forming region 16 made of an organic semiconductor thin film 15 formed between the source / drain electrodes 14 and on the gate insulating film 13;
It has.

The organic semiconductor thin film 15 extends also on the source / drain electrode 14. Further, the organic semiconductor thin film 15 was made of pentacene. Furthermore, the support 10 is made of a silicon substrate, the base 11 is made of polyethersulfone (PES), the gate electrode 12 and the source / drain electrodes 14 are made of a gold (Au) layer, and the gate insulating film 13 is formed. It was composed of SiO ₂ .

  Hereinafter, (A) to (D) in FIGS. 1A and 1B which are schematic partial sectional views of the support and the like, (A) to (C) in FIG. 2, and (A) to (B) in FIG. The outline of the manufacturing method of the FET of Example 1 will be described with reference to FIG.

[Step-100]
First, the gate electrode 12 is formed on the substrate 11. Specifically, a pattern for forming a gate electrode is formed on a base 11 made of polyethersulfone (PES) bonded to a support 10 made of a silicon substrate based on a resist layer 31 ((A) in FIG. 1). reference).

  Next, a Ti layer as an adhesion layer and an Au layer as an ohmic electrode are sequentially formed on the substrate 11 and the resist layer 31 by a vacuum deposition method (see FIG. 1B). In the drawings, the adhesion layer is not shown. When vapor deposition is performed, the support 10 to which the substrate 11 is bonded is placed on a support holder (not shown) whose temperature can be adjusted, thereby suppressing an increase in the temperature of the support during vapor deposition. Therefore, film formation with minimal deformation of the substrate 11 can be performed.

  Thereafter, the resist layer 31 is removed by a lift-off method, whereby the gate electrode 12 made of an Au layer can be obtained (see FIG. 1C).

[Step-110]
Next, the gate insulating film 13 is formed on the base 11 including the gate electrode 12. Specifically, the gate insulating film 13 made of SiO ₂ is formed on the gate electrode 12 and the substrate 11 based on the sputtering method. When forming the gate insulating film 13, by covering a part of the gate electrode 12 with a hard mask, a gate electrode extraction portion (not shown) can be formed without a photolithography process. Further, during the formation of the gate insulating film 13, the support 10 the base 11 is bonded are placed on the support body holder can adjust the temperature (not shown), during the deposition of SiO ₂ Therefore, it is possible to perform film formation with minimal deformation of the substrate 11.

[Step-120]
Thereafter, source / drain electrodes 14 are formed on the gate insulating film 13. Specifically, a pattern for forming source / drain electrodes is formed on the entire surface based on the resist layer 32 (see FIG. 1D).

  Next, a Ti layer as an adhesion layer and an Au layer as an ohmic electrode are sequentially formed on the gate insulating film 13 and the resist layer 32 by a vacuum deposition method (see FIG. 2A). In the drawings, the adhesion layer is not shown. When vapor deposition is performed, the support 10 to which the substrate 11 is bonded is placed on a support holder (not shown) whose temperature can be adjusted, thereby suppressing an increase in the temperature of the support during vapor deposition. Therefore, film formation with minimal deformation of the substrate 11 can be performed.

  Thereafter, the resist layer 32 is removed by a lift-off method, whereby the source / drain electrode 14 made of an Au layer can be obtained (see FIG. 2B).

[Step-130]
Next, the organic semiconductor thin film 15 is formed on the entire surface (see FIG. 2C). Specifically, an organic semiconductor thin film 15 made of pentacene is formed on the source / drain electrode 14 and the gate insulating film 13 based on the vacuum deposition method illustrated in Table 1 below.

[Table 1]
Support temperature: 60 ° C
Deposition rate: 3 nm / min Pressure: 5 × 10 ⁻⁴ Pa

[Step-140]
Thereafter, the organic semiconductor thin film 15 irradiated with the energy rays is irradiated with ultraviolet rays as energy rays (more specifically, only by irradiating the organic semiconductor thin film 15 with ultraviolet rays as energy rays). This portion is removed based on sublimation, thereby leaving the organic semiconductor thin film 15 on the portion of the gate insulating film 13 between the source / drain electrodes 14 and on the source / drain electrodes 14 (see FIG. 3A). Thereby, a channel forming region 16 made of the organic semiconductor thin film 15 can be obtained. Alternatively, by irradiating the organic thin film 15 constituting the organic thin film integrated circuit with energy rays (more specifically, by irradiating the organic thin film 15 constituting the organic thin film integrated circuit only with energy rays), energy is obtained. The portion of the organic thin film 15 irradiated to the line is removed.

  Specifically, a mask (photomask) 33 is disposed above the gate insulating film 13 and the source / drain electrodes 14. This mask 33 has a structure in which the portion of the organic semiconductor thin film 15 to be left is not irradiated with ultraviolet rays. That is, this mask 33 has an ultraviolet transmissive region and an ultraviolet shielding region, the ultraviolet transmissive region is located above the portion of the organic semiconductor thin film 15 to be sublimated, and the ultraviolet shielding is above the portion of the organic semiconductor thin film 15 to be left. The area is located. The wavelength of the ultraviolet light is selected according to the absorption wavelength of the organic thin film or the organic semiconductor thin film 15. The irradiation intensity (irradiation energy) and irradiation time are within a range in which the gate insulating film 13 and the source / drain electrode 14 corresponding to the base are not damaged, and the organic thin film or the organic semiconductor thin film 15 absorbs ultraviolet energy. And choose to sublimate.

[Step-150]
Next, after an insulating layer 20 made of SiO ₂ is formed on the entire surface, an opening is formed in the portion of the insulating layer 20 above the gate electrode 12 and the source / drain electrode 14, and the insulating layer 20 including the inside of these openings is formed. A wiring material layer is formed on this, and this wiring material layer is patterned to form a wiring (not shown) connected to the gate electrode 12 and a wiring 21 connected to the source / drain electrode 14. Yes (see FIG. 3B). Thus, the FET of Example 1 can be obtained.

  Example 2 relates to a method for manufacturing an organic thin film integrated circuit according to the present invention, and a method for manufacturing an FET according to the second aspect of the present invention. FIG. 4C shows a schematic partial cross-sectional view of the FET obtained by cutting the FET obtained by the FET manufacturing method of Example 2 on a virtual vertical plane perpendicular to the extending direction of the gate electrode.

The FET of Example 2 is a so-called bottom gate type and top contact type TFT,
(A) a gate electrode 12 formed on the substrate 11;
(B) a gate insulating film 13 formed on the gate electrode 12;
(C) a channel forming region 16 made of an organic semiconductor thin film 15 formed on the gate insulating film 13, and
(D) source / drain electrodes 14 formed on the organic semiconductor thin film 15;
It has.

  In the FET according to the second embodiment, the source / drain electrodes 14 and the organic semiconductor thin film 15 are arranged in the vertical direction in the reverse direction as in the FET according to the first embodiment. Can be the same. Therefore, detailed description of the FET of Example 2 is omitted.

  Hereinafter, an outline of a method for manufacturing the FET of Example 2 will be described with reference to FIGS. 4A to 4C which are schematic partial cross-sectional views of a support and the like.

[Step-200]
First, the gate electrode 12 is formed on the substrate 11 in the same manner as in [Step-100] of the first embodiment.

[Step-210]
Next, a gate insulating film 13 is formed on the substrate 11 including the gate electrode 12 in the same manner as in [Step-110] in Example 1.

[Step-220]
Thereafter, the organic semiconductor thin film 15 is formed on the entire surface in the same manner as in [Step-130] of Example 1. Specifically, an organic semiconductor thin film 15 made of pentacene is formed on the gate insulating film 13 based on the vacuum deposition method illustrated in Table 1 (see FIG. 4A).

[Step-230]
Next, in the same manner as in [Step-140] of Example 1, the organic semiconductor thin film 15 is irradiated with ultraviolet rays as energy rays (more specifically, the organic semiconductor thin film 15 is irradiated with energy rays. 4), the portion of the organic semiconductor thin film 15 irradiated with the energy rays is removed based on sublimation, thereby leaving the organic semiconductor thin film 15 and obtaining the channel forming region 16 composed of the organic semiconductor thin film 15 ((B in FIG. 4). )reference). Alternatively, by irradiating the organic thin film 15 constituting the organic thin film integrated circuit with energy rays (more specifically, by irradiating the organic thin film 15 constituting the organic thin film integrated circuit only with energy rays), energy is obtained. The portion of the organic thin film 15 irradiated to the line is removed.

[Step-240]
Thereafter, source / drain electrodes 14 made of an Au layer are formed on the organic semiconductor thin film 15. Specifically, with a portion of the organic semiconductor thin film 15 and the gate insulating film 13 covered with a hard mask, a Ti layer as an adhesion layer and an Au layer as an ohmic electrode are sequentially formed on the organic semiconductor thin film 15. It is formed by vacuum evaporation. In the drawings, the adhesion layer is not shown. Thus, the source / drain electrode 14 made of the Au layer can be formed without a photolithography process.

[Step-250]
Next, in the same manner as in [Step-150] in Example 1, an insulating layer 20 made of SiO ₂ is formed on the entire surface, and then an opening is formed in the insulating layer 20 above the gate electrode 12 and the source / drain electrode 14. , Forming a wiring material layer on the insulating layer 20 including the inside of these openings, and patterning the wiring material layer, thereby connecting a wiring (not shown) connected to the gate electrode 12 and a source / A wiring 21 connected to the drain electrode 14 can be formed (see FIG. 4C). Thus, the FET of Example 2 can be obtained.

  Example 3 relates to a method for manufacturing an organic thin film integrated circuit according to the present invention and a method for manufacturing an FET according to the third aspect of the present invention. FIG. 5C shows a schematic partial cross-sectional view of the FET obtained by cutting the FET obtained by the FET manufacturing method of Example 3 on a virtual vertical plane perpendicular to the extending direction of the gate electrode.

The FET of Example 3 is a so-called top gate type and top contact type TFT,
(A) a channel forming region 16 made of an organic semiconductor thin film 15 formed on the substrate 11;
(B) a source / drain electrode 14 formed on the organic semiconductor thin film 15;
(C) a gate insulating film 13 formed on the source / drain electrode 14 and the organic semiconductor thin film 15, and
(D) a gate electrode 12 formed on the gate insulating film 13,
It has.

  The FET of the third embodiment is thus different in structure from the FET of the first embodiment, but the materials constituting each component can be the same as the FET of the first embodiment. Therefore, detailed description of the FET of Example 3 is omitted. Hereinafter, the outline of the manufacturing method of the FET of Example 3 will be described with reference to FIGS.

[Step-300]
First, the organic semiconductor thin film 15 is formed on the substrate 11. Specifically, the organic semiconductor thin film 15 is formed on the entire surface in the same manner as in [Step-130] of Example 1 (see FIG. 5A). Specifically, an organic semiconductor thin film 15 made of pentacene is formed on the base 11 based on the vacuum deposition method illustrated in Table 1.

[Step-310]
Next, in the same manner as in [Step-140] of Example 1, the organic semiconductor thin film 15 is irradiated with ultraviolet rays as energy rays (more specifically, the organic semiconductor thin film 15 is irradiated with energy rays. The organic semiconductor thin film 15 is left by removing the portion of the organic semiconductor thin film 15 irradiated with the energy rays based on sublimation (see FIG. 5B). Thereby, a channel forming region 16 made of the organic semiconductor thin film 15 can be obtained. Alternatively, by irradiating the organic thin film 15 constituting the organic thin film integrated circuit with energy rays (more specifically, by irradiating the organic thin film 15 constituting the organic thin film integrated circuit only with energy rays), energy is obtained. The portion of the organic thin film 15 irradiated to the line is removed.

[Step-320]
Thereafter, source / drain electrodes 14 made of an Au layer are formed on the organic semiconductor thin film 15. Specifically, in a state where a part of the organic semiconductor thin film 15 and the substrate 11 are covered with a hard mask, a Ti layer as an adhesion layer and an Au layer as an ohmic electrode are sequentially vacuumed on the organic semiconductor thin film 15. It is formed by vapor deposition. In the drawings, the adhesion layer is not shown. Thus, the source / drain electrode 14 made of the Au layer can be formed without a photolithography process.

[Step-330]
Next, a gate insulating film 13 is formed on the entire surface in the same manner as in [Step-110] of the first embodiment.

[Step-340]
Thereafter, a gate electrode 12 made of an Au layer is formed on the gate insulating film 13 in the same manner as in [Step-100] of the first embodiment. In the drawings, the adhesion layer is not shown. Alternatively, a Ti layer as an adhesion layer and an Au layer as an ohmic electrode are sequentially formed on the gate insulating film 13 by a vacuum deposition method with a part of the gate insulating film 13 covered with a hard mask. As a result, the gate electrode 12 can be formed without a photolithography process.

[Step-350]
Next, in the same manner as in [Step-150] in Example 1, an insulating layer 20 made of SiO ₂ is formed on the entire surface, and then an opening is formed in the insulating layer 20 above the gate electrode 12 and the source / drain electrode 14. , Forming a wiring material layer on the insulating layer 20 including the inside of these openings, and patterning the wiring material layer, thereby connecting a wiring (not shown) connected to the gate electrode 12 and a source / A wiring 21 connected to the drain electrode 14 can be formed (see FIG. 5C). Thus, the FET of Example 3 can be obtained.

  Example 4 relates to a method for manufacturing an organic thin film integrated circuit according to the present invention and a method for manufacturing an FET according to the fourth aspect of the present invention. FIG. 6C shows a schematic partial cross-sectional view when the FET obtained by the FET manufacturing method of Example 4 is cut along a virtual vertical plane perpendicular to the extending direction of the gate electrode.

The FET of Example 4 is a so-called top gate type and bottom contact type TFT,
(A) source / drain electrodes 14 formed on the substrate 11;
(B) a channel forming region 16 made of an organic semiconductor thin film 15 formed on the source / drain electrode 14 and the substrate 11;
(C) a gate insulating film 13 formed on the organic semiconductor thin film 15, and
(D) a gate electrode 12 formed on the gate insulating film 13,
It has.

  In the FET of the fourth embodiment, the arrangement state of the source / drain electrodes 14 and the organic semiconductor thin film 15 in the vertical direction is opposite to that of the FET of the third embodiment. Can be the same. Therefore, detailed description of the FET of Example 4 is omitted.

  The outline of the method for manufacturing the FET of Example 4 will be described below with reference to FIGS. 6A to 6C which are schematic partial cross-sectional views of the support and the like.

[Step-400]
First, the source / drain electrodes 14 are formed on the substrate 11 in the same manner as in [Step-120] in Example 1 or [Step-320] in Example 3.

[Step-410]
Next, the organic semiconductor thin film 15 is formed on the entire surface. Specifically, the organic semiconductor thin film 15 is formed on the substrate 11 and the source / drain electrodes 14 in the same manner as in [Step-130] of Example 1 (see FIG. 6A). Specifically, an organic semiconductor thin film 15 made of pentacene is formed on the substrate 11 and the source / drain electrodes 14 based on the vacuum deposition method exemplified in Table 1.

[Step-420]
Thereafter, as in [Step-140] of Example 1, the organic semiconductor thin film 15 is irradiated with ultraviolet rays as energy rays (more specifically, the organic semiconductor thin film 15 is irradiated with energy rays. The organic semiconductor thin film 15 is left by removing the portion of the organic semiconductor thin film 15 irradiated with the energy rays based on sublimation (see FIG. 6B). Thereby, a channel forming region 16 made of the organic semiconductor thin film 15 can be obtained. Alternatively, by irradiating the organic thin film 15 constituting the organic thin film integrated circuit with energy rays (more specifically, by irradiating the organic thin film 15 constituting the organic thin film integrated circuit only with energy rays), energy is obtained. The portion of the organic thin film 15 irradiated to the line is removed.

[Step-430]
Next, a gate insulating film 13 is formed on the entire surface in the same manner as in [Step-110] in Example 1.

[Step-440]
Thereafter, a gate electrode 12 made of an Au layer is formed on the gate insulating film 13 in the same manner as in [Step-100] of the first embodiment. In the drawings, the adhesion layer is not shown. Alternatively, a Ti layer as an adhesion layer and an Au layer as an ohmic electrode are sequentially formed on the gate insulating film 13 by a vacuum deposition method with a part of the gate insulating film 13 covered with a hard mask. As a result, the gate electrode 12 can be formed without a photolithography process.

[Step-450]
Next, in the same manner as in [Step-150] in Example 1, an insulating layer 20 made of SiO ₂ is formed on the entire surface, and then an opening is formed in the insulating layer 20 above the gate electrode 12 and the source / drain electrode 14. , Forming a wiring material layer on the insulating layer 20 including the inside of these openings, and patterning the wiring material layer, thereby connecting a wiring (not shown) connected to the gate electrode 12 and a source / A wiring 21 connected to the drain electrode 14 can be formed (see FIG. 6C). Thus, the FET of Example 4 can be obtained.

  As mentioned above, although this invention was demonstrated based on the preferable Example, this invention is not limited to these Examples. The structure and manufacturing conditions of the field effect transistor are illustrative and can be changed as appropriate. When the FET of the present invention is applied to and used in display devices and various electronic devices, it may be a monolithic integrated circuit in which a large number of FETs are integrated on a substrate, or individualized by cutting each FET into discrete components. May be used.

  In the embodiment, the organic thin film or the organic semiconductor thin film is selectively sublimated by the batch irradiation of ultraviolet rays so that the organic thin film or the organic semiconductor thin film is patterned with high accuracy without damaging the organic thin film or the organic semiconductor thin film. For example, a channel formation region can be obtained. Irradiation of ultraviolet rays is not limited to collective irradiation, and an organic thin film or an organic semiconductor thin film may be irradiated while sequentially moving an ultraviolet shaped beam shaped in accordance with a pattern of a channel forming region. Alternatively, the organic thin film or the organic semiconductor thin film may be decomposed or evaporated by scanning the irradiation point of the focused laser beam in a region other than the channel formation region instead of the ultraviolet shaped beam.

The manufacturing method of the organic thin film integrated circuit of the present invention is not limited to the application to the formation of the channel forming region composed of the organic semiconductor thin film in the organic thin film transistor as described in the embodiments. That is, the manufacturing method of the organic thin film integrated circuit of the present invention is, for example,
(1) By irradiating the organic thin film constituting the organic thin film integrated circuit (specifically, the gate electrode) with energy rays (more preferably, only by irradiating), the organic thin film irradiated to the energy rays (2) By irradiating the organic thin film constituting the organic thin film integrated circuit (specifically, the source / drain electrode) with energy rays (more) A method of forming source / drain electrodes made of an organic thin film by removing a portion of the organic thin film irradiated with energy rays (preferably only by irradiation) (3) Organic thin film integrated circuit (specifically, By irradiating energy rays to the organic thin film constituting the various wirings (more preferably, only by irradiating), the organic thin film irradiated to the energy rays (4) Organic thin film integrated circuit (specifically, various insulating layers such as an insulating film, an interlayer insulating layer, a passivation film, etc.) A method of obtaining a patterned insulating layer made of an organic thin film by removing a portion of the organic thin film irradiated with the energy rays by irradiating the energy rays (more preferably, only by irradiating) (5 ) By irradiating the organic thin film constituting the organic thin film integrated circuit (specifically, various insulating layers such as insulating films, interlayer insulating layers, and passivation films) with energy rays (more preferably, only by irradiating) , Openings and connectors for forming contact holes such as contact holes and via holes by removing portions of the organic thin film irradiated with energy rays An opening for providing a connection between can be applied to a method of forming the insulating layer comprising an organic thin film.

  In the above cases (1) to (5), various insulating layers such as gate electrodes, source / drain electrodes, various wirings, insulating films, interlayer insulating layers, and passivation films (collectively, As the organic thin film constituting the organic thin film integrated circuit component), an optimal material may be selected for the organic thin film integrated circuit component, and the energy rays to be irradiated to the organic thin film also constitute the organic thin film integrated circuit component It is only necessary to select an energy beam that is optimal for the material to be used and that does not cause damage to the ground or the like. In addition, the irradiation method and irradiation conditions of the energy beam, and the form of removal of the organic thin film may be appropriately selected, set, and determined based on the organic thin film integrated circuit component or the organic thin film constituting the organic thin film integrated circuit component. .

1A to 1D are schematic partial cross-sectional views of a support and the like for explaining the method for manufacturing the field-effect transistor of Example 1. FIG. 2A to 2C are schematic partial cross-sectional views of a support and the like for explaining the method for manufacturing the field-effect transistor of Example 1 following FIG. 1D. . 3A to 3B are schematic partial cross-sectional views of a support and the like for explaining the method for manufacturing the field-effect transistor of Example 1 following FIG. 2C. . 4A to 4C are schematic partial cross-sectional views of a support and the like for explaining the method for producing the field effect transistor of Example 2. FIG. 5A to 5C are schematic partial cross-sectional views of a support and the like for explaining the method for manufacturing the field-effect transistor of Example 3. FIG. 6A to 6C are schematic partial cross-sectional views of a support and the like for explaining the method for manufacturing the field effect transistor of Example 4. FIG. FIGS. 7A to 7C are schematic partial cross-sectional views of a substrate and the like for explaining an outline of an example of a conventional method for producing an organic field effect transistor. FIGS. 8A to 8C are schematic partial cross-sectional views of a substrate and the like for explaining an outline of an example of a conventional method for manufacturing an organic field effect transistor, following FIG. 7C. FIG. FIGS. 9A and 9B are schematic partial cross-sectional views of a substrate and the like for explaining the outline of another example of the conventional method of manufacturing an organic field effect transistor.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Support body, 11 ... Base | substrate, 12 ... Gate electrode, 13 ... Gate insulating film, 14 ... Source / drain electrode, 15 ... Organic-semiconductor thin film or organic thin film, 16 * ..Channel formation region, 20 ... insulating layer, 21 ... wiring, 31, 32 ... resist layer, 33 ... mask

Claims (10)

An organic thin film integrated circuit manufacturing method comprising:
A method for producing an organic thin film integrated circuit, comprising: irradiating an organic thin film constituting the organic thin film integrated circuit with an energy beam to remove a portion of the organic thin film irradiated with the energy beam. (A) forming a gate electrode on the substrate;
(B) forming a gate insulating film on the substrate and the gate electrode;
(C) forming a source / drain electrode on the gate insulating film; and
(D) After forming an organic semiconductor thin film on the entire surface, the organic semiconductor thin film is irradiated with energy rays to remove the portion of the organic semiconductor thin film irradiated with the energy rays, thereby insulating the gate between the source / drain electrodes. Leaving a portion of the film and the organic semiconductor thin film on the source / drain electrodes to obtain a channel forming region made of the organic semiconductor thin film;
A method of manufacturing a field effect transistor. 3. The field effect transistor according to claim 2, wherein, in the step (D), the portion of the organic semiconductor thin film irradiated with ultraviolet rays is removed by sublimation by irradiating the organic semiconductor thin film with ultraviolet rays. Production method. (A) forming a gate electrode on the substrate;
(B) forming a gate insulating film on the substrate and the gate electrode;
(C) After forming the organic semiconductor thin film on the entire surface, irradiating the organic semiconductor thin film with energy rays to remove the portion of the organic semiconductor thin film irradiated with the energy rays, thereby forming a channel forming region comprising the organic semiconductor thin film And obtaining
(D) forming a source / drain electrode on the organic semiconductor thin film;
A method for producing a field effect transistor, comprising: 5. The field effect transistor according to claim 4, wherein, in the step (C), the portion of the organic semiconductor thin film irradiated with ultraviolet rays is removed by sublimation by irradiating the organic semiconductor thin film with ultraviolet rays. Production method. (A) Forming an organic semiconductor thin film on a substrate, and then irradiating the organic semiconductor thin film with energy rays to remove portions of the organic semiconductor thin film irradiated with the energy rays, thereby forming a channel composed of the organic semiconductor thin film. Obtaining a region;
(B) forming a source / drain electrode on the organic semiconductor thin film;
(C) forming a gate insulating film on the entire surface; and
(D) forming a gate electrode on the gate insulating film;
A method for producing a field effect transistor, comprising: 7. The field effect transistor according to claim 6, wherein, in the step (A), the portion of the organic semiconductor thin film irradiated with ultraviolet rays is removed by sublimation by irradiating the organic semiconductor thin film with ultraviolet rays. Production method. (A) forming source / drain electrodes on the substrate;
(B) After forming the organic semiconductor thin film on the entire surface, irradiating the organic semiconductor thin film with energy rays to remove the portion of the organic semiconductor thin film irradiated with the energy rays, thereby forming a channel forming region made of the organic semiconductor thin film Obtaining a step,
(C) forming a gate insulating film on the entire surface; and
(D) forming a gate electrode on the gate insulating film;
A method for producing a field effect transistor, comprising: 9. The field effect transistor according to claim 8, wherein in the step (B), the portion of the organic semiconductor thin film irradiated with the ultraviolet rays is removed by sublimation by irradiating the organic semiconductor thin film with ultraviolet rays. Production method. 10. The method of manufacturing a field effect transistor according to claim 2, wherein the organic semiconductor thin film is made of pentacene.

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