JP2005159598A - Microwave high power amplifier - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve problems of a conventional microwave high power amplifier (microwave high power amplifier adopting three combination processes) employing a Wilkinson asymmetric splitter / combiner circuit that (1) a received RF power is given to the Wilkinson asymmetric splitter / combiner circuit, the power is split into two, and one of the two split powers is split furthermore into two, resulting in that 3 split powers are produced and two combining processes are required, (2) in the case of 3 or more combinations, phase differences are hardly matched and an RF loss such as a combining loss is great, and (3) the line with a length of 1/4 wavelength of an input RF is required for matching every splitting / combining of the power and a considerable space is required not only in the length direction but also in the width direction. <P>SOLUTION: The microwave high power amplifier is realized wherein an input output matching circuit is designed to approximately have one feeding point so that phase differences at splitting / combining of the input RF power are hardly caused to reduce an RF loss such as a combining loss, and a space of the input output matching circuit in both the length and width directions is considerably reduced. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a radar and an electronic warfare high power amplifier capable of amplifying high power by distributing power, amplifying power by a plurality of high power amplifiers, and synthesizing the amplified power again. The present invention relates to an amplifying device for microwave high power for a part.

  Conventionally, Wilkinson's unequal distribution / combination circuit has been used for power distribution and synthesis in a microwave high power amplifier (see, for example, Patent Document 1). In order to avoid an increase in the size of the matching circuit due to distribution other than Wilkinson's unequal distribution / synthesis circuit, the active elements arranged in parallel are connected to a common input matching circuit via an input wire, and a common output via an output wire. There is a method of connecting to a matching circuit (see, for example, Patent Document 2). In order to improve the reproducibility of the circuit at the time of manufacturing the device, there is a method of fixing the output terminal with a positioning pin to fix the position of the amplifier (for example, see Patent Document 3).

Japanese Patent Publication No. 11-330813 (FIG. 1)

Japanese Patent Publication No. 2-154501 (Fig. 1)

Japanese Utility Model Publication No. 3-101016 (FIG. 1)

However, a microwave high power amplification device using a Wilkinson unequal distribution and synthesis circuit (hereinafter, the present invention will be described using a three-composition microwave high power amplification device unless otherwise stated) has an input RF power of It is input to Wilkinson's unequal distribution circuit, and after 2 distributions, the distributed one is further divided into 2 to be 3 distributions, which are respectively input to the 3 large power amplifiers, and the output is the reverse procedure of the input. Synthesized. In general, when the phase difference is Δφ ₁ = φ ₁ −φ ₂ , 2 combined loss L ₁ is

It can be expressed as If P = P ₁ = P ₂ ,

3 The combination loss L ₃ is L ₃ = L ₁ + L ₂ , and the influence of the phase difference on the combination loss is larger than the output power difference. Therefore, if the input RF power is equally divided and combined, P = P ₃ = P ₄ and Δφ ₂ = φ ₃ −φ ₄

Thus, the composite loss occurs twice. In the case of 3 synthesis or more, there is a problem that it is difficult to match the phase difference and RF loss such as synthesis loss is large. In addition, every time power is distributed and combined, it is necessary to match the line length with a quarter wavelength of the input RF signal, and there is a problem that a large space is required not only in the longitudinal direction but also in the width direction. .

  The present invention has been made to solve the above-described problems, and the input / output matching circuit is designed to be approximately one feeding point so that the phase difference of the distribution synthesis of the input RF power is less likely to occur. An object of the present invention is to provide an amplifying device for high-frequency microwaves that reduces RF loss such as loss and greatly reduces the space in the longitudinal and width directions of the input / output matching circuit.

  A microwave high power amplifying device according to a first aspect of the present invention is a housing, a lower dielectric substrate provided on a surface of the housing and having a long hole portion, and the length on the lower dielectric substrate. An input and output pattern having a wide portion extending along the longitudinal direction of the long hole portion on one side and the other side of the hole portion and extending along the longitudinal direction of the long hole portion, and the input and output lead portions and the flange A plurality of large electric powers inserted in the elongated hole portion and connected to the input and output patterns respectively in the longitudinal direction of the elongated hole portion. Amplifier, an upper dielectric substrate provided close to the slot on the input and output patterns, and provided with a notch in the portion surrounding the input and output lead portions, and the upper dielectric substrate Gras provided above And de pattern, is characterized in that a cooler is provided on the back surface of the housing.

  According to a second aspect of the present invention, there is provided an amplifying apparatus for high-power microwaves, wherein the flange is fixed to the casing.

  According to a third aspect of the present invention, there is provided a microwave high power amplifying apparatus having a flange common to the plurality of high power amplifiers.

  According to a fourth aspect of the present invention, there is provided a microwave high power amplifying apparatus which is positioned in the elongated hole portion by a positioning pin.

  According to a fifth aspect of the present invention, there is provided an amplifying apparatus for microwave high power, which is arranged close to each other based on a combined loss and a temperature increase rate of the plurality of high power amplifiers.

  According to the first aspect of the present invention, since the feeding point of the input RF signal is approximately one, a quarter wavelength matching circuit is unnecessary. Therefore, three synthesis operations that are normally performed in two steps are only required once, and a phase difference hardly occurs, and synthesis loss and RF loss are reduced. Further, it is not necessary to set the line length at a quarter wavelength of the input RF signal every time power is distributed and combined, and the circuit dimensions in the longitudinal and width directions can be reduced. Therefore, the phase difference has a greater effect on the composite loss than the output power difference, so the desired performance can be achieved using the existing chip even when the corresponding power varies from chip to chip or when the range of chip options for high power amplifiers is narrow. In addition, the circuit structure is configured with a triplate dielectric substrate, so that the space provided in order to prevent the influence of leakage electromagnetic fields from the circuit when the housing is mounted to the top of the housing is narrowed in the circuit thickness direction. By reducing the circuit dimensions, it is possible to obtain an amplifying device for microwave high power in which the circuit dimensions in the longitudinal direction, width and circuit thickness direction are reduced.

  According to the invention of claim 2, by fixing the flange mounting the chip to the housing, heat generated from the chip can be efficiently conducted from the housing to the cooler. It is possible to obtain an amplifying apparatus for microwave high power that hardly causes a phase difference.

  According to the invention of claim 3, by using a common flange for each chip, the number of parts such as screws can be reduced when mounting the housing, and the chip spacing and arrangement can be reduced. An amplifying apparatus for high-power microwave can be obtained with wide reproducibility and flexibility.

  According to the fourth aspect of the present invention, since a plurality of high power amplifiers are positioned in the elongated hole portion by the positioning pins, the fixing method is improved in accuracy, reproducibility, and flexibility of the mounting position compared to screwing. Thus, an amplifying apparatus for microwave high power can be obtained.

  According to the invention of claim 5, by arranging the chips on the basis of the synthesis loss and the temperature rise rate, the chips at both ends and the internal chips caused by heat overlap between adjacent chips in a circuit of three or more synthesis Therefore, the RF signal passing through the chip does not cause a phase difference because the chip has an equipass phase. Further, since the upper limit of the chip interval is set to be equal to or less than the worst value of the synthesis loss, it is possible to obtain an amplifying apparatus for microwave high power in which the phase difference due to the synthesis is reduced.

Example 1.
Embodiments 1 and 5 of the present invention will be described below with reference to FIGS. 1 to 4 are circuit configuration diagrams of the microwave high power amplifier according to the first and fifth embodiments. In FIG. 1, 1 is a high power amplifier, 2 is a dielectric substrate, and 3 is an input / output matching circuit (inner layer). ) Pattern 4 is a screw. 2 is a cross-sectional view taken along the line AA ′ of FIG. 1. In FIG. 2, 5, 6 and 7 are conductors, 8 and 9 are dielectrics, 10 is a housing, and 11 is a cooler. 3 is a cross-sectional view taken along the line BB ′ of FIG. 1. In FIG. 3, reference numeral 12 denotes a high-power amplifier chip, which is die-bonded inside. In FIG. 4, reference numeral 14 denotes a triplate dielectric substrate cut out in the inner layer RF pattern portion. In FIG. 7, the horizontal axis indicates the phase difference, the vertical axis indicates the combined loss, and the graph line indicates the combined loss due to the phase difference of the distributed combined power difference of 3, 2, 1, 0 dB in order from the top. In the drawings, the same reference numerals denote the same or corresponding parts, and detailed descriptions thereof are omitted.

Three large power amplifier 1 is connected to the input-output matching circuit (inner layer) pattern 3 of the dielectric substrate 2 which portion each lead is Kirikakare, attached fixed screw 4 leads interval is provided at a distance of X ₁ (FIG. 2). The first layer of the conductor 5 has a ground conductor pattern. The conductor 5 and the dielectric 8 are notched in the lead portion mounting portion, and constitute a triplate matching substrate. The lead portion of the high power amplifier 1 is connected to the RF pattern of the conductor 6. The conductor 7 has a ground conductor pattern and is in contact with the housing 10. The cooler 11 is installed under the casing 10 and cools the high power amplifier (FIG. 3). Further, as shown in FIG. 4, a notched substrate having an island pattern for impedance adjustment in the inner layer RF pattern portion, such as the triplate dielectric substrate 14, may be used as the triplate matching substrate.

Mounting position X ₁ of the large power amplifier 1, the temperature of the high power amplifier left term chip temperature of the position of the tip 12 is proximate the center of the large power amplifier of the large power amplifier is outside as shown in FIG. 3 As a result, the outer chip and the inner chip in the high-power amplifier 1 are not in an equi-passing phase, and a phase difference occurs. In FIG. 3, the width of the high power amplifier 1 is w, the flange thickness of the high power amplifier 1 is t ₁ , the thickness of the housing 10 is t ₂ , and the cooler 11 is sufficiently cooled. when extension when heat was diffused in ° is the distance to the intersection with the bottom of the casing thickness and X _2,

The minimum value of the mounting position _{X 1} is

That is, by configuring the chip interval of the high power amplifier by 2 (t ₁ + t ₂ ) + w <X ₁ , the temperature difference of the central high power amplifier due to heat overlap is avoided, and the high power amplifier is Since the equi-pass phase can be maintained, the composite loss caused by the phase difference due to the temperature difference can be reduced.

But the value of the mounting position X ₁ increases and becomes sufficiently not smaller value than the wavelength lambda _g of the used frequency, 3 synthesis feeding point is not one approximately, synthesized loss increases. In general, the phase relationship is represented in FIG. 7, and the worst value of the combined loss is about 0.4 dB as in the prior art, and corresponds to the phase difference Δφ ₁ = 36 °. Since the combined loss at that time is approximately one feeding point, the combined loss for one time is reduced as compared with the conventional case. That maximum value of the mounting position _{X 1} is the _{X 1 <λ g} / 10. From the above conditions, the mounting position X ₁ needs to be designed in the range of 2 (t ₁ + t ₂ ) + w <X ₁ <λ _g / 10.

Next, the operation will be described. In the input matching circuit pattern of the input RF signal, each RF signal is divided into three by the lead portion, but the attachment position X1 of the high power amplifier ₁ is 2 (t ₁ + t ₂ ) + w <X ₁ <λ _g / 10 intervals, so the interval is as small as 1/10 or less of the operating frequency, and the circuit can be handled from a distributed constant to a lumped constant. There is no need to do it. Further, as described above, since the phase difference caused by the temperature difference due to heat radiation between the high power amplifiers 1 is also suppressed, the output is the same as the input side after being amplified by being connected to the three high power amplifiers 1. The amplified RF signal is taken out via the lead portion to the matching circuit pattern.

Example 2
A second embodiment of the present invention will be described. The second embodiment will be described with reference to FIGS. In the drawings, the same reference numerals denote the same or corresponding parts, and detailed descriptions thereof are omitted. The configuration is such that the high-power amplifier 1 in the microwave high-power amplifier of Example 1 is fixed to the housing.

Example 3
A third embodiment of the present invention will be described with reference to FIG. In FIG. 5, 13 is a common flange. In the drawings, the same reference numerals denote the same or corresponding parts, and detailed descriptions thereof are omitted. The configuration is such that the flanges of the three high power amplifiers 1 in the microwave high power amplifying device of the first embodiment are made into one common flange.

Example 4
Embodiment 4 of the present invention will be described with reference to FIG. FIG. 6 is a circuit configuration diagram of the microwave high-power amplifier according to the fourth embodiment. In FIG. 6, reference numeral 16 denotes a positioning pin. In the drawings, the same reference numerals denote the same or corresponding parts, and detailed descriptions thereof are omitted. The configuration is such that the fixing method of the high power amplifier 1 in the microwave high power amplifying device of the first embodiment is fixed from the screw by the positioning pin.

1 is a circuit configuration diagram of a microwave high power amplifier according to Embodiment 1 of the present invention. 1A-A 'sectional view of the microwave high power amplifier according to Embodiment 1 of the present invention 1B-B 'sectional view of the microwave high power amplifier according to Embodiment 1 of the present invention Circuit configuration diagram of a microwave high-power amplifier according to Embodiment 3 of the present invention 1 is a circuit configuration diagram of an amplifying apparatus for microwave high power provided with an adjustment island pattern according to Embodiment 1 of the present invention. Circuit configuration diagram of a microwave high power amplifier according to Embodiment 4 of the present invention The graph of the synthetic | combination loss by the phase difference in the Example 1 thru | or 4 of this invention and a Wilkinson unequal distribution circuit in the distribution composition

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... High power amplifier 2 ... Dielectric board | substrate 3a, 3b ... Input / output matching circuit pattern 4 ... Screw 5, 6, 7 ... Conductor 8, 9 ... Dielectric 10 ... Housing 11 ... Cooler 12 ... Chip 13 ... Common Flange 14 ... Triplate dielectric substrate 15 ... Adjusting island pattern 16 ... Positioning pin

Claims (5)

A casing, a lower layer dielectric substrate provided on the surface of the casing and having a slot, and one of the slots on the lower layer dielectric substrate and the other side of the slot, the slot An input and output pattern having a wide portion extending along the longitudinal direction of the elongated hole portion, an input and output lead portion and a flange, and inserting the flange into the elongated hole portion, The input and output lead portions are connected to the input and output patterns, respectively, and a plurality of high power amplifiers arranged close to each other in the longitudinal direction of the elongated hole portions, and the elongated hole portions on the input and output patterns. An upper dielectric substrate provided close to each other and provided with a notch in a portion surrounding the input and output lead portions, a ground pattern provided on the upper dielectric substrate, and a back surface of the housing Installed cooler Microwave high power amplifier apparatus characterized by comprising a. The microwave high-power amplifier according to claim 1, wherein the high-power amplifier has the flange fixed to the housing. The microwave high power amplifier according to claim 1, wherein the plurality of high power amplifiers have a common flange. The microwave high power amplifier according to claim 1, wherein the high power amplifier is positioned in the elongated hole portion by a positioning pin. The microwave high power amplifier according to claim 1, wherein the plurality of high power amplifiers are arranged close to each other based on a combined loss and a temperature rise rate.

Images