JP2005159339A5 - - Google Patents
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- Publication number
- JP2005159339A5 JP2005159339A5 JP2004317479A JP2004317479A JP2005159339A5 JP 2005159339 A5 JP2005159339 A5 JP 2005159339A5 JP 2004317479 A JP2004317479 A JP 2004317479A JP 2004317479 A JP2004317479 A JP 2004317479A JP 2005159339 A5 JP2005159339 A5 JP 2005159339A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004317479A JP4559190B2 (ja) | 2003-11-06 | 2004-11-01 | 化合物半導体素子 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003376618 | 2003-11-06 | ||
| JP2004317479A JP4559190B2 (ja) | 2003-11-06 | 2004-11-01 | 化合物半導体素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005159339A JP2005159339A (ja) | 2005-06-16 |
| JP2005159339A5 true JP2005159339A5 (zh) | 2007-12-13 |
| JP4559190B2 JP4559190B2 (ja) | 2010-10-06 |
Family
ID=34741436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004317479A Expired - Fee Related JP4559190B2 (ja) | 2003-11-06 | 2004-11-01 | 化合物半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4559190B2 (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101146819B1 (ko) | 2008-09-23 | 2012-05-21 | 일진머티리얼즈 주식회사 | 단결정 기판의 제조방법, 이에 의해 제조된 단결정 기판, 상기 단결정 기판을 포함하는 발광소자, 및 이의 제조방법 |
| JP4786730B2 (ja) * | 2009-05-28 | 2011-10-05 | シャープ株式会社 | 電界効果型トランジスタおよびその製造方法 |
| KR101202838B1 (ko) | 2010-06-16 | 2012-11-20 | 전북대학교산학협력단 | 결정결함 내에 스피어를 포함하는 발광소자 및 그 제조방법 |
| DE102014115599A1 (de) * | 2013-10-28 | 2015-04-30 | Seoul Viosys Co., Ltd. | Halbleitervorrichtung und Verfahren zu deren Herstellung |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3591710B2 (ja) * | 1999-12-08 | 2004-11-24 | ソニー株式会社 | 窒化物系ｉｉｉ−ｖ族化合物層の成長方法およびそれを用いた基板の製造方法 |
| US6447604B1 (en) * | 2000-03-13 | 2002-09-10 | Advanced Technology Materials, Inc. | Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices |
| JP3592616B2 (ja) * | 2000-06-22 | 2004-11-24 | 昭和電工株式会社 | Ｉｉｉ族窒化物半導体発光素子 |
| JP4644942B2 (ja) * | 2001-01-18 | 2011-03-09 | ソニー株式会社 | 結晶膜、結晶基板および半導体装置の製造方法 |
| JP3832313B2 (ja) * | 2001-11-02 | 2006-10-11 | 日亜化学工業株式会社 | 窒化物半導体の成長方法及び窒化物半導体 |
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2004
- 2004-11-01 JP JP2004317479A patent/JP4559190B2/ja not_active Expired - Fee Related