JP2005159068A - Illumination optical apparatus and aligner - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an illumination optical apparatus capable of obtaining a uniform illumination field without uneven illuminance even when a light source used for illumination is a laser light source for stimulating a collimated luminous flux with high directivity such as an excimer laser. <P>SOLUTION: The illumination optical apparatus includes a collimated luminous flux supply means for supplying a collimated luminous flux, and a light guide for introducing a collimated luminous flux from the collimated luminous flux supply means to an object to be illuminated. In the optical apparatus, a light shield means for controlling the luminous intensity distribution is provided between the collimated luminous flux supply means and the light guide to shield the light to a region deviated from the center of an incident light onto the light guide, thereby uniformizing the intensity of the emitted light from the light guide and forming the uniform illumination field. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

The present invention provides an illumination optical device, particularly an illumination optical device used for an alignment optical system of a projection exposure apparatus, a micro device (a liquid crystal display element, a semiconductor element, an imaging element such as a CCD, a thin film magnetic head, etc.). The present invention relates to an illumination optical apparatus suitable for a lithography process, an exposure apparatus, a method suitable for manufacturing an excellent micro device, and an illumination light source for a microscope.

Technical background

  For example, in an exposure apparatus for manufacturing a semiconductor element, after aligning a mask (reticle) and a wafer, exposure light is irradiated onto the mask, and the pattern formed on the mask is projected onto the wafer via a projection optical system. Transfer exposure on top. At the time of alignment, the position of an alignment mark (hereinafter referred to as “wafer mark”) formed on the wafer is photoelectrically detected by an alignment system, and the position of the wafer is detected based on the detected position information of the wafer mark. And wafer alignment.

  As an alignment system, for example, a position detection device according to an FIA (Field Image Alignment) system is known. In the FIA type position detection device, for example, a halogen lamp is used as a light source, and the mark is illuminated with light having a wide wavelength bandwidth. The light (including diffracted light) from the illuminated wafer mark forms an image of the wafer mark on the imaging surface of the CCD via the imaging optical system.

  In addition, in the FIA type position detection apparatus, an index mark is provided in the optical path of the imaging optical system, for example, separately from the wafer. The index mark image is also formed on the same CCD imaging surface. Thus, the position of the wafer mark, that is, the position of the wafer, is detected based on the imaging signal of the obtained wafer mark image and the imaging signal of the index mark image.

  In an alignment optical system of a projection exposure apparatus, as an illumination optical system for irradiating an alignment mark, for example, when illuminating a translucent alignment mark provided on an indicator plate on a movable stage, to illuminate a moving target When it is necessary to move the area to transmit light freely, an illumination optical system having a light guide made of an optical fiber has been used.

  FIG. 1 shows an illumination optical system using such a conventional optical fiber.

In FIG. 1, light emitted from a mercury lamp 71 as a light source is collected by reflection by an elliptical mirror or the like, and enters a light guide 74 made of an optical fiber or the like via relay lenses 72 and 73. A light source image having a sufficient NA and diameter is formed at the incident end of the light guide 74, and the light emitted from the light guide 74 forms a predetermined illumination field on the irradiation surface 70 through the condenser lens 79. . Here, the illumination field means a region irradiated with light of uniform intensity.

JP 2003-197515 A

  However, in the illumination optical system shown in FIG. 1, an illumination field having a uniform illuminance distribution such as a 72 is formed on the irradiation surface 70, but it is emitted from the light guide 74 and applied to the condenser lens 79. When the incident light is at the secondary light source surface equivalent position 76 and the luminance distribution of the illumination light beam is non-uniform, such as a71, measurement errors may occur particularly for a low step pattern. It became clear by study of. In other words, in the FIA position detection device, a measurement error occurs due to nonuniformity of the imaging light beam incident on the final image plane.

The present invention provides an illumination optical apparatus necessary for easily and easily performing highly accurate position detection. The present invention also provides an illumination optical apparatus capable of easily adjusting illumination conditions even in an illumination optical system such as a microscope.

  The present invention has been made to solve the above problems.

  The present invention controls an intensity distribution of light between the light source and the light guide in an illumination optical device having a light source that supplies a light beam and a light guide that guides the light beam from the light source to the illuminated object side. An illumination optical device characterized in that a light shielding means is provided.

  Further, the present invention is the illumination optical device characterized in that the light source for supplying the light beam is a parallel light beam supplying means for supplying a parallel light beam.

  Further, according to the present invention, in these illumination optical devices described above, the intensity at the exit end of the light emitted from the light guide is shielded by the light shielding means in a region shifted from the central portion of the light incident on the light guide. Is an illumination optical device characterized in that

  Further, the present invention provides an illumination optical device having a light source that supplies a light beam and a light guide that guides the light beam from the light source toward the object to be illuminated. A light intensity distribution is provided between the light source and the light guide. An illumination optical apparatus characterized in that a deflection angle distribution variable means for controlling is provided.

  Further, according to the present invention, in the illumination optical apparatus, the light emitted from the light guide is made incident by making the light amount distribution of the incident light to the light guide asymmetric with respect to the optical axis by the deflection angle distribution varying unit. The illumination optical device is characterized in that the intensity of the illumination is uniform.

  According to the present invention, there is provided the illumination optical apparatus characterized in that in the illumination optical apparatus described above, another second light guide for allowing the light beam emitted from the light guide (first light guide) to enter is provided.

  Further, the present invention is the illumination optical device characterized in that the second light guide is an image guide.

  According to another aspect of the present invention, there is provided an exposure apparatus for transferring a pattern image provided on a mask onto a photosensitive substrate. An exposure apparatus comprising: a projection optical system for forming on a conductive substrate.

Further, the present invention includes an exposure step of exposing the pattern of the mask onto the photosensitive substrate using the exposure apparatus, and a development step of developing the photosensitive substrate exposed by the exposure step. A device manufacturing method characterized by the following.

According to the illumination optical device of the present invention, there is an effect that the position can be accurately detected even in a low step pattern (wafer mark). In addition, when the illumination system of the present invention is used for a microscope, the illumination conditions can be varied steplessly, and there is an effect that observation accuracy can be improved as compared with the conventional case.

  In order to form the illumination field as described above, the present invention uses the light beam emitted from the rear stage as the luminance distribution of the illumination light beam at the light guide exit end provided in the front stage is uniform. This is based on the inventors' experience that the position of a wafer mark can be accurately detected even with a low-level wafer mark.

  An embodiment of the present invention will be described with reference to FIG. The present invention is an illumination optical system that guides a light beam supplied from a light source 1 to an irradiated object side by light guides 4 and 7. Specifically, the light beam emitted from the light source 1 enters the first light guide 4 via the relay lenses 2 and 3. The light-shielding means 11 provided between the relay lenses 2 and 3 shields the area deviated from the central portion of the light beam, and the light beam via the relay lens 3 enters the incident end of the first light guide 4. The light beam emitted from the first light guide 4 passes through the condenser lens 5 and then enters the incident end of the second light guide 7. The light beam emitted from the second light guide 7 is irradiated onto the irradiation surface 10 via the objective lens 9. The distribution of the amount of light irradiated onto the irradiation surface 10 formed at this time forms a wide uniform distribution illumination field as indicated by a34.

  At this time, the luminance distribution a33 of the light beam emitted from the second light guide 7 is more uniform than the luminance distribution a31 of the light beam emitted from the first light guide 4. Here, the luminance distribution at the exit end 6 of the second light guide 7 affects the detection accuracy of the mark having a low step on the irradiation surface 10 because the brightness distribution at the exit end 6 of the second light guide 7 is uniform. This is because the more there is, the smaller the error due to the phase difference component due to the mark having a low step on the irradiation surface 10.

  The first light guide 4 and the second light guide 7 used here are light guides (hereinafter referred to as random light guides) in which fine glass fibers are bundled and the arrangement of single wires on the incident side is random on the emission side. ). In this random light guide with high randomness, since the optical fibers are randomly twisted inside, the light emitted from the whole is spread out.

  For this reason, by shifting the light shielding means 11 from the central portion in the direction perpendicular to the illumination optical axis, it is possible to obtain an illumination means having a uniform luminance distribution.

Here, as shown in FIG. 5, when the light shielding means 11 shields the central portion, a ring-shaped illumination like a53 is performed at the position of the secondary light source surface 6, but compared with the case where the central light shielding is performed in this way. As shown in FIG. 3, detection of a mark with a low step formed on the irradiation surface 10 is more suitable when the position of the light shielding means 11 is shifted in the vertical direction from the central portion.
Further, as shown in FIG. 2, in the optical system without the light shielding means 11, uniform illumination is not performed as in a <b> 23 at the position of the secondary light source surface 6, and an error is detected in the detection position of the mark having a low step on the irradiation surface 10. Occurs.

In addition, as shown in FIG. 6B, the light shielding plate is not limited to the circular light shielding plate as shown in FIG. 6A, as long as it shields the position shifted from the center of the light beam as shown in FIG. A rectangular light shielding plate may be used. Even if the light shielding plate does not completely shield light, it may be any material that can change the light intensity, such as an ND filter. In the above embodiment, the light shielding plate is used as means for shielding the light beam incident on the light guide. However, as shown in FIG. 4, the deflection angle distribution varying means for controlling the intensity distribution of light such as DOE and prism. Even if 12 is used, the same effect can be obtained. Such an element can shift the peak of the light amount distribution of the incident light from the central portion, and therefore can be an illuminating means having a uniform luminance distribution as in the case of using a light shielding plate.

In the case of a microscope or the like, the second light guide 7 may be more suitable to use an image guide. In the image guide, the optical fibers are arranged in a completely aligned manner inside the image guide, the information of the image incident by the incident light is stored as it is, and the image formed by the emitted light is incident. It is the same as the image.

  The present invention will be described with reference to FIG.

  FIG. 8 is a drawing schematically showing a configuration of an exposure apparatus provided with a position detection apparatus according to each embodiment of the present invention. In FIG. 8, the Z axis is parallel to the optical axis of the projection optical system PL, the X axis is in a plane perpendicular to the Z axis in a plane perpendicular to the Z axis, and the X axis is in a plane perpendicular to the Z axis in FIG. The Y axis is set in the direction perpendicular to the paper surface of FIG. In each embodiment, the present invention is applied to a wafer W position device based on position information of a wafer mark image obtained by illuminating a wafer mark formed on the wafer W and obtained via an imaging optical system. Yes.

  The illustrated exposure apparatus includes an exposure illumination system IL for illuminating a reticle R as a mask (projection original) with appropriate exposure light. The reticle R is supported substantially parallel to the XY plane on the reticle stage RS, and a circuit pattern to be transferred is formed in the pattern area PA. The light illuminated by the exposure illumination system IL and transmitted through the reticle R reaches the wafer W through the projection optical system PL, and a pattern image of the reticle R is formed on the wafer W.

  The wafer W is supported on the Z stage ZS via the wafer holder WH substantially in parallel with the XY plane. The Z stage ZS is configured to be driven along the optical axis of the projection optical system PL by the stage control system SC. Further, the Z stage ZS is supported on the XY stage XY. The XY stage XY is also configured to be driven two-dimensionally in the XY plane perpendicular to the optical axis of the projection optical system PL by the stage control system SC.

  Here, the stage control system SC is configured to be controlled by the main control system MC. As described above, in the exposure apparatus, it is necessary to accurately position the exposure surface of the wafer W with respect to the projection optical system PL prior to the projection exposure. Therefore, the exposure apparatus is equipped with a position detection device PD for detecting the relative position (position along the XY plane and position along the Z direction) of the wafer W with respect to the projection optical system PL.

FIG. 9 shows an illumination optical system of the position detecting device of the projection exposure apparatus according to the present invention. The position detection device PD includes a light source 101 such as a halogen lamp and an infrared light source (not shown) such as an LED (light emitting diode). Illumination light supplied from the light source 101 is converted into substantially parallel light by the relay lens 102, and after passing through the wavelength selection filter 103, a part of the light beam is shielded by the light shielding plate 104 arranged at a position deviated from the optical axis. The light beam thus incident is incident on the incident end of the first light guide 106 via the relay lens 105. The wavelength selection filter 103 has a characteristic of selectively transmitting only a specific wavelength of the illumination light from the light source 101. Further, the light shielding plate 104 has a rectangular shape as shown in FIG. 7B, and is disposed so as to shield a position eccentric from the optical axis. The illumination light that has propagated through the first light guide 106 is emitted from its exit end, and then Koehler illuminations the entrance end of the second light guide 108 via the condenser lens 107. Here, a uniform illuminance distribution is formed on the incident end face of the second light guide 108. The light beam emitted from the exit end of the second light guide 108 illuminates the illumination stop 110 via the condenser lens 109.

  The illumination stop 110 is disposed at or near a position optically conjugate with the surface (object plane) of the wafer W that is the test object. In the illumination stop 110, a rectangular first opening (light transmitting portion) that is close to a square to a certain extent is adjacent to a slit-like (elongated rectangular) second opening (light transmitting portion) that is elongated. Is formed. Here, the first opening is an alignment opening, and the second opening is a focusing opening.

  The illumination light that has passed through the illumination stop 110 is reflected by the half prism 112 via the relay lens 111 and then enters the first objective lens 113. The light beam incident on the first group of the first objective lens 113 is reflected by the mirror 114 disposed in the optical path, and then enters the index plate 115 via the second group of the first objective lens 113. On the other hand, the infrared light from the infrared light source enters the indicator plate 115 through the first objective lens 113 after passing through a predetermined optical path (not shown).

  The index plate 115 is a parallel flat plate-like optical member made of, for example, quartz glass. An index mark is formed on the upper side surface (the surface on the first objective lens 113 side), and the lower side surface (wafer W). An infrared reflection film is formed on the side surface. The infrared reflecting film reflects infrared light from the infrared light source and transmits white light (visible light) from the light source 101, and is made of, for example, a dielectric multilayer film. Therefore, the white light from the light source 101 passes through the indicator plate 115 and illuminates the surface (exposure surface) of the wafer W.

  In this way, the illumination light through the first opening of the illumination stop 110 illuminates a wafer mark (not shown) as an alignment mark formed on the surface of the wafer W. On the other hand, the illumination light that has passed through the second opening of the illumination stop 110 illuminates the slit-like region that is elongated along the Y direction on the surface of the wafer W from an oblique direction. Mark reflected light (including diffracted light) from the illuminated wafer mark and slit-like focus light flux reflected by the surface of the wafer W are incident on the half prism 112 via the index plate 115 and the first objective lens 113. To do.

  On the other hand, the infrared light incident on the indicator plate 115 propagates inside the indicator plate 115, is reflected by the infrared reflecting film, propagates inside the indicator plate 115, and illuminates the indicator mark. Then, the reflected light from the illuminated indicator mark (including diffracted light) propagates through the indicator plate 115, is reflected by the infrared reflecting film, and propagates again through the indicator plate 115, then the first The light enters the half prism 112 through the objective lens 113. The mark reflected light, the focus light beam, and the infrared light that have passed through the half prism 112 enter the field stop 118 via the mirror 116 and the second objective lens 117.

  The field stop 118 is disposed at a position optically conjugate with or near the surface of the wafer W, and extends elongated along the Y-direction with the first rectangular opening so as to optically correspond to the illumination stop 110. And a slit-shaped second opening. Mark reflected light and infrared light that have passed through the first opening of the field stop 118 enter the dichroic mirror 123 via the third objective lens 119, the aperture stop 120, the fourth objective lens 121, and the mirror 122. The dichroic mirror 123 has a characteristic of reflecting white light and transmitting infrared light.

Therefore, the mark reflected light, that is, the white light from the wafer mark is reflected by the dichroic mirror 123 and enters the wafer mark detection CCD 124. Thus, a wafer mark image is formed on the imaging surface of the wafer mark detection CCD 124. An output signal from the wafer mark detection CCD 124 is supplied to the signal processing system 125. On the other hand, the infrared light from the index mark passes through the dichroic mirror 123, is reflected by the mirror 126, and then enters the index mark detection CCD 127. Thus, an image of the index mark is formed on the imaging surface of the index mark detection CCD 127 on the imaging surface of the index mark detection CCD 127. An output signal from the index mark detection CCD 127 is supplied to the signal processing system 125.

  The signal processing system 125 performs signal processing (waveform processing) on the output signal from the wafer mark detection CCD 124 and the output signal from the index mark detection CCD 127, thereby obtaining wafer mark position information based on the index mark. . The wafer mark position information detected by the signal processing system 125 (that is, position information on the wafer W) is supplied to the main control system MC. The main control system MC supplies an instruction for driving the XY stage XY to the stage control system SC based on the position information of the wafer W supplied from the signal processing system 125. Thus, alignment (positioning) between the pattern area PA on the reticle R and each exposure area on the wafer W is performed by the action of the stage control system SC that operates based on an instruction from the main control system MC.

  On the other hand, the focused light beam that has passed through the second opening of the field stop 118 enters the pupil splitting mirror 130 having two reflecting surfaces via the mirror 128 and the relay lens system 129. The pupil division mirror 130 is a pupil division element disposed at or near the pupil plane position having a Fourier transform relationship with the surface of the wafer W, and the intersection line of the two reflection surfaces passes along the optical axis along the Y direction. It is set to extend. Thus, the focus light beam reflected by the pupil division mirror 130 passes through the imaging lens 131 and the cylindrical lens 132 as a condensing optical system in the Y direction on the imaging surface (detection surface) of the imaging element (for example, line sensor) 133. Two slit images having a longitudinal direction along are formed. The image sensor 133 photoelectrically detects two slit images formed on the imaging surface and supplies a detection signal to the signal processing system 125.

The signal processing system 125 measures the distance between the centers of the two slit images, and detects the amount of relative displacement of the surface of the wafer W with respect to the focal position of the first objective lens 113 based on the measured distance between the centers. Information regarding the relative displacement amount of the wafer W detected by the signal processing system 125 is supplied to the main control system MC. The main control system MC drives the Z stage ZS shown in FIG. 8 along the optical axis XA by the detected relative positional deviation amount based on the information on the relative positional deviation amount supplied from the signal processing system 125. The command is supplied to the stage control system SC. In this way, the exposure surface of the wafer W is set at the focal position of the first objective lens 113 and thus on the image plane of the projection optical system PL by the action of the stage control system SC that operates based on a command from the main control system MC. Is done.

In the exposure apparatus having the illumination system according to the embodiment described above, the illumination optical device illuminates the mask (or reticle) (illumination process), and the transfer pattern formed on the mask using the projection optical system is applied to the photosensitive substrate. Microdevices (semiconductor elements, imaging elements, liquid crystal display elements, thin film magnetic heads, etc.) can be manufactured by exposure (exposure process). Refer to the flowchart of FIG. 10 for an example of a method for obtaining a semiconductor device as a micro device by forming a predetermined circuit pattern on a wafer or the like as a photosensitive substrate using the exposure apparatus of the above-described embodiment. To explain.

First, in step 301 of FIG. 10, a metal film is deposited on one lot of wafers. In the next step 302, a photoresist is applied on the metal film on one lot of wafers. Thereafter, in step 303, using the exposure apparatus of the above-described embodiment, the image of the pattern on the mask is sequentially exposed to each shot area on the wafer of one lot via the projection optical system (projection optical module). Transcribed. Thereafter, in step 304, the photoresist on the one lot of wafers is developed, and in step 305, the resist pattern is etched on the one lot of wafers to form a pattern on the mask. Corresponding circuit patterns are formed in each shot area on each wafer. Thereafter, a circuit pattern is formed on the upper layer to manufacture a device such as a semiconductor element. According to the semiconductor device manufacturing method described above, even a semiconductor device having an extremely fine circuit pattern can be exposed.

In the exposure apparatus of the above-described embodiment, a liquid crystal display element as a micro device can be obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate).

  The present invention can also be applied to an illumination system for a microscope. FIG. 11 shows a configuration of a microscope illumination optical system according to the present invention. Illumination light supplied from a light source 201 composed of a halogen lamp is converted into a substantially parallel light beam by a relay lens 202, and a part of the light beam is shielded by a light shielding plate 204 disposed at a position decentered from the optical axis, and then relayed. The lens 205 irradiates the incident end of the light guide 206. The light beam incident from the incident end of the light guide 206 is emitted from the emission end, and the incident end of the image guide 208 is Koehler illuminated via the condenser lens 207. Here, the luminance distribution at the exit end of the image guide 208 can be changed depending on the position of the light shielding plate 204. When the light shielding plate 204 is arranged so as to block the substantially center of the optical axis as shown in FIG. 7A, the luminance distribution at the exit end of the image guide is dark at the center as shown on the right side of the figure. The part is bright, so-called annular illumination. When the light shielding plate is arranged so as to block the position slightly decentered from the optical axis as shown in FIG. 7B, the luminance distribution at the exit end of the image guide is as shown in the right side of the figure. The so-called large sigma illumination with almost uniform brightness from to the periphery. Further, when the light shielding plate 204 is arranged so as to shield a position greatly decentered from the optical axis as shown in FIG. 7C, the luminance distribution at the exit end of the image guide is centered as shown on the right side of the figure. This is so-called small σ illumination in which the part is bright and the peripheral part is dark. In this way, by changing the position of the light shielding plate 204, it is possible to change steplessly to the optimum illumination condition according to the specimen.

  As described above, since the illumination condition can be changed to an uninterrupted floor, it is possible to easily adjust to the observation condition that makes it easy to see. This is because, in a microscope, the uneven step of the observation target is not constant, and the appearance differs depending on the illumination conditions optimal for the step of the observation target. Specifically, when observing the entire observation target, or when observing the contour portion with the edge portion emphasized, various observation conditions can be changed for observation. If the edge portion is to be emphasized, the light shielding plate 204 is arranged at the position shown in FIG.

The light beam incident on the image guide 208 is emitted from the exit end and then illuminates the field stop 210 via the condenser lens 209. The light that has passed through the field stop 210 is reflected by the half prism 212 via the relay lens 211 and illuminates the specimen 200 via the objective lens 213. The diffracted light from the illuminated specimen 200 passes through the objective lens 213, the half prism 212, and the imaging lens 250, and forms an enlarged image I1. The magnified image I1 is observed through the eyepiece lens 251.

These are the conceptual diagrams of the illumination optical system of a prior art. These are the conceptual diagrams at the time of using an excimer laser light source for the illumination optical system of a prior art. These are the conceptual diagrams of the illumination optical system which concerns on this invention. These are the conceptual diagrams of the modification of the illumination optical system which concerns on this invention. These are the conceptual diagrams which light-shielded the center part with the illumination optical system which concerns on this invention. These are figures which showed the shape of the light-shielding means. These are the figures which showed the luminance distribution in the position of a light-shielding means, and an image guide injection | emission end. These are the schematic block diagrams of the projection exposure apparatus using the illumination optical system of this invention. These are the schematic block diagrams which used this invention for the alignment optical system of the projection exposure apparatus. These are the flowcharts of the method at the time of obtaining the semiconductor device as a microdevice. These are the schematic block diagrams which used this invention for the illumination system of the microscope.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Light source 2 ... Relay lens 3 ... Relay lens 4 ... 1st light guide 5 ... Relay lens 7 ... 2nd light guide 9 ... Objective lens 10 ... Covered Illuminated object surface 11 ... light shielding member

Claims (9)

In an illumination optical device having a light source that supplies a light beam and a light guide that guides the light beam from the light source to the illuminated object side,
An illumination optical apparatus, wherein a light shielding unit for controlling a light intensity distribution is provided between the light source and the light guide.
An illumination optical apparatus, wherein the light source for supplying a light beam according to claim 1 is a parallel light beam supplying means for supplying a parallel light beam.
The illumination optical device according to claim 1 or 2, wherein the intensity at the exit end of the light emitted from the light guide is reduced by shielding the region shifted from the central portion of the light incident on the light guide by the light shielding means. An illumination optical device characterized by being uniform.
In an illumination optical device having a light source that supplies a light beam and a light guide that guides the light beam from the light source to the illuminated object side,
An illumination optical apparatus, comprising: a deflection angle distribution variable means for controlling a light intensity distribution between the light source and the light guide.
5. The illumination optical apparatus according to claim 4, wherein the deviation light distribution variable means makes the light distribution of the incident light to the light guide asymmetric with respect to the optical axis so as to be emitted from the light guide. An illumination optical device characterized by uniform intensity.
6. The illumination optical apparatus according to claim 1, further comprising a second light guide into which a light beam emitted from the light guide (first light guide) is incident.
An illumination optical apparatus, wherein the second light guide is an image guide.
In an exposure apparatus for transferring an image of a pattern provided on a mask onto a photosensitive substrate,
The illumination optical apparatus according to claim 1 for illuminating the mask;
An exposure apparatus comprising: a projection optical system for forming an image of the mask pattern on the photosensitive substrate.
An exposure process for exposing the pattern of the mask onto the photosensitive substrate using the exposure apparatus according to claim 8 and a developing process for developing the photosensitive substrate exposed by the exposure process. A device manufacturing method characterized by the above.

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