JP2005158973A - Multi-layer circuit board and its manufacturing method - Google Patents

Multi-layer circuit board and its manufacturing method

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Publication number
JP2005158973A
JP2005158973A JP2003394675A JP2003394675A JP2005158973A JP 2005158973 A JP2005158973 A JP 2005158973A JP 2003394675 A JP2003394675 A JP 2003394675A JP 2003394675 A JP2003394675 A JP 2003394675A JP 2005158973 A JP2005158973 A JP 2005158973A
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circuit
layer
insulating
plating
circuit portion
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JP2003394675A
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Shinobu Kida
忍 木田
Takashi Shindo
崇 進藤
Nobuhiro Yoshioka
伸宏 吉岡
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Panasonic Electric Works Co Ltd
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Matsushita Electric Works Ltd
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Priority to JP2003394675A priority Critical patent/JP2005158973A/en
Publication of JP2005158973A publication Critical patent/JP2005158973A/en
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a multi-layer circuit board by which an insulating layer having no irregular surface can be formed, no step for polishing the surface of the insulating layer is required, and a circuit can be accurately formed on the insulting layer. <P>SOLUTION: The manufacturing method includes a step to form a plating base layer 2 on the surface of an insulating substrate 1 or an insulting layer 7, a step to remove the plating base layer 2 on a boundary between a circuit 3 and a non-circuit 4 by applying an electromagnetic wave along the boundary therebetween, a step to form a circuit 11 comprised of the plating base layer 1 and a plating layer 5 in the circuit part 3, by applying plating respectively to the plating base layer 2 of the circuit part 3 and the plating base layer 2 remaining in the non-circuit 4 so as to form the plating layer 5, and a step to form an insulating layer 7 by adhering an insulative material 6 from the upper side of the plating layers 5 of the circuit 3 and the non-circuit 4. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、主として立体形状を有する多層回路基板の製造方法及びこの方法で製造された多層回路基板に関するものである。   The present invention relates to a method of manufacturing a multilayer circuit board mainly having a three-dimensional shape and a multilayer circuit board manufactured by this method.

多層回路基板を製造するにあたって、絶縁性基材の表面に薄いめっき下地層を形成し、回路部と非回路部との境界に沿って電磁波を照射してこの部分のめっき下地層を除去した後に、回路部のめっき下地層に電気めっきを施してめっき層を形成することによって、めっき下地層とめっき層からなる回路を形成するようにした方法が従来から提供されている(例えば、特許文献1等参照)
図6〜図8はこの方法の一例を示すものであり、まず図6(a)のように絶縁性基材1の表面に薄いめっき下地層2を形成し、絶縁性基材1に回路11を形成する部分である回路部3と回路部3以外の非回路部4との境界に沿ってレーザ等の電磁波Lを照射することによって、図6(b)のように回路部3と非回路部4との境界のめっき下地層2を除去する。次に、回路部3のめっき下地層2に通電して電気めっきを施すことによって、図6(c)のように回路部3のめっき下地層2の上にめっき層5を形成する。このとき、非回路部4は回路部3と絶縁されており、非回路部4のめっき下地層2には通電されていないので、非回路部4のめっき下地層2にはめっき層5は形成されない。次にエッチングを行なうことによって、図6(d)のように非回路部4に残存する薄いめっき下地層2を除去する。回路部3のめっき層5もエッチングの作用を受けるが、めっき層5は厚みが厚いので、めっき層5がなくなることはない。このようにして、回路部3にめっき下地層2とめっき層5からなる回路11を形成することができるものである。
In manufacturing a multilayer circuit board, after forming a thin plating base layer on the surface of the insulating substrate and irradiating electromagnetic waves along the boundary between the circuit part and the non-circuit part, the plating base layer of this part is removed. A method has been conventionally provided in which a circuit comprising a plating base layer and a plating layer is formed by electroplating the plating base layer of the circuit portion to form a plating layer (for example, Patent Document 1). Etc.)
FIGS. 6 to 8 show an example of this method. First, as shown in FIG. 6A, a thin plating base layer 2 is formed on the surface of the insulating substrate 1, and the circuit 11 is formed on the insulating substrate 1. By irradiating an electromagnetic wave L such as a laser along the boundary between the circuit part 3 which is a part forming the non-circuit part 4 other than the circuit part 3, the circuit part 3 and the non-circuit as shown in FIG. The plating base layer 2 at the boundary with the part 4 is removed. Next, the plating layer 5 is formed on the plating base layer 2 of the circuit part 3 as shown in FIG. At this time, since the non-circuit portion 4 is insulated from the circuit portion 3 and is not energized to the plating base layer 2 of the non-circuit portion 4, the plating layer 5 is formed on the plating base layer 2 of the non-circuit portion 4. Not. Next, by etching, the thin plating base layer 2 remaining in the non-circuit portion 4 is removed as shown in FIG. Although the plating layer 5 of the circuit portion 3 is also subjected to the etching action, the plating layer 5 is not lost because the plating layer 5 is thick. In this way, the circuit 11 including the plating base layer 2 and the plating layer 5 can be formed in the circuit portion 3.

上記のようにして一層目の回路11を形成することができるものであり、この上に二層目の回路11を形成するにあたっては、まず図7(a)のように液状樹脂などからなる絶縁性材料6をノズル15から滴下し、スピンコート等して絶縁性材料6を延ばすと共に硬化させることによって、回路部3の回路11及び非回路部4を覆う絶縁層7を図7(b)のように形成する。このとき、回路部3には厚みの厚い回路11が存在し、非回路部4には回路11が存在しないので、回路部3に形成される絶縁層7と非回路部4に形成される絶縁層7の間に高さの差が生じ、図7(b)にみられるように絶縁層7の表面に大きな凹凸が生じることになる。そして、このように絶縁層7に大きな凹凸が生じると、絶縁層7の上に回路11を精度高く形成することが困難になるという問題や、実装部品を実装する際の実装不良が発生し易くなるという問題が起こることになる。   The first-layer circuit 11 can be formed as described above. In forming the second-layer circuit 11 on the first-layer circuit 11, first, as shown in FIG. The insulating layer 6 covering the circuit 11 and the non-circuit portion 4 of the circuit portion 3 is formed by dropping the insulating material 6 from the nozzle 15 and extending and hardening the insulating material 6 by spin coating or the like, as shown in FIG. To form. At this time, since the thick circuit 11 exists in the circuit unit 3 and the circuit 11 does not exist in the non-circuit unit 4, the insulating layer 7 formed in the circuit unit 3 and the insulation formed in the non-circuit unit 4. A difference in height occurs between the layers 7 and large irregularities are generated on the surface of the insulating layer 7 as seen in FIG. And when such large unevenness | corrugation arises in the insulating layer 7, the problem that it becomes difficult to form the circuit 11 on the insulating layer 7 with high precision, and the mounting defect at the time of mounting mounting components are easy to generate | occur | produce. The problem of becoming will occur.

そこで、絶縁層7を形成した後、図7(c)のように研磨装置16で絶縁層7の表面を研磨することによって、図7(d)のように絶縁層7の表面を平坦化し、この上に回路11を形成するようにしている。すなわち、表面を平坦化した絶縁層7に一層目の回路11の位置においてビアホール17を加工した後、絶縁層7の上にビアホール17の内周も含めてめっき下地層2を図8(a)のように形成する。そして後は上記と同様に、回路部3と非回路部4との境界に沿ってレーザ等の電磁波Lを照射して図8(b)のように回路部3と非回路部4との境界のめっき下地層2を除去し、回路部3のめっき下地層2の上に電気めっきしてめっき層5を形成した後にエッチングして非回路部4のめっき下地層2を除去することによって、図8(c)のように絶縁層7の上に一層目の回路11とビアホール17を通して導通接続された二層目の回路11を形成することができるものである。さらに回路11を多層に形成する場合には、図8(d)のように二層目の回路11の上に絶縁層7を形成し、絶縁層7の上に上記と同様にして回路11を形成することによって行なうことができる。回路11の上に形成される絶縁層7には図7(b)の場合と同様に凹凸が生じるので、図7(c)と同様な研磨の工程が必要となる。
特開平7−66533号公報
Therefore, after the insulating layer 7 is formed, the surface of the insulating layer 7 is polished by the polishing apparatus 16 as shown in FIG. 7C, thereby flattening the surface of the insulating layer 7 as shown in FIG. A circuit 11 is formed thereon. That is, after the via hole 17 is processed at the position of the first circuit 11 in the insulating layer 7 whose surface is flattened, the plating base layer 2 including the inner periphery of the via hole 17 is formed on the insulating layer 7 as shown in FIG. Form as follows. After that, similarly to the above, an electromagnetic wave L such as a laser is irradiated along the boundary between the circuit unit 3 and the non-circuit unit 4, and the boundary between the circuit unit 3 and the non-circuit unit 4 as shown in FIG. The plating base layer 2 is removed, and the plating layer 5 is formed by electroplating on the plating base layer 2 of the circuit portion 3 and then etched to remove the plating base layer 2 of the non-circuit portion 4. As shown in FIG. 8C, the second-layer circuit 11 that is conductively connected to the first-layer circuit 11 through the via hole 17 can be formed on the insulating layer 7. Further, when the circuit 11 is formed in multiple layers, the insulating layer 7 is formed on the second-layer circuit 11 as shown in FIG. 8D, and the circuit 11 is formed on the insulating layer 7 in the same manner as described above. This can be done by forming. Since the insulating layer 7 formed on the circuit 11 is uneven as in the case of FIG. 7B, a polishing step similar to that in FIG. 7C is required.
JP 7-66533 A

このように、絶縁層7を介して回路11を形成することによって、多層の回路11を設けた多層回路基板を形成することができるが、上記のように、回路部3及び非回路部4を覆うように絶縁層7を形成するにあたって、厚い回路11が存在する回路部3と回路11が存在しない非回路部4との間で絶縁層7の表面に大きな凹凸が生じるので、絶縁層7の表面を研磨して凹凸を平坦にするための工程が必要となり、工数が増加するという問題があった。特に表面が三次元形状を有する立体回路基板の場合には、研磨を行なうこと自体ができず、この結果、凹凸の大きい絶縁層7に形成する回路11の精度に問題を有するものであった。   Thus, by forming the circuit 11 via the insulating layer 7, a multilayer circuit board provided with the multilayer circuit 11 can be formed. As described above, the circuit unit 3 and the non-circuit unit 4 are When the insulating layer 7 is formed so as to cover the surface, the surface of the insulating layer 7 is largely uneven between the circuit portion 3 where the thick circuit 11 exists and the non-circuit portion 4 where the circuit 11 does not exist. There was a problem that a process for polishing the surface and flattening the unevenness was required, resulting in an increase in man-hours. In particular, in the case of a three-dimensional circuit board having a three-dimensional shape, the polishing itself cannot be performed, and as a result, there is a problem in the accuracy of the circuit 11 formed on the insulating layer 7 having large irregularities.

本発明は上記の点に鑑みてなされたものであり、表面の凹凸が小さい絶縁層を形成することができ、絶縁層の表面を研磨する工数が不要になると共に、絶縁層の上に精度高く回路を形成することができる多層回路基板の製造方法及び多層回路基板を提供することを目的とするものである。   The present invention has been made in view of the above points, and can form an insulating layer with small surface irregularities, eliminates the need for the step of polishing the surface of the insulating layer, and provides high accuracy on the insulating layer. An object of the present invention is to provide a method for manufacturing a multilayer circuit board capable of forming a circuit and a multilayer circuit board.

本発明の請求項1に係る多層回路基板の製造方法は、絶縁性基材1又は後記絶縁層7の表面にめっき下地層2を形成する工程と、回路部3と非回路部4との境界に沿って電磁波を照射して回路部3と非回路部4との境界のめっき下地層2を除去する工程と、回路部3のめっき下地層2と非回路部4に残存するめっき下地層2にそれぞれめっきを施してめっき層5を形成することによって、回路部3にめっき下地層2とめっき層5からなる回路11を形成する工程と、回路部3及び非回路部4のめっき層5の上から絶縁性材料6を付着させて絶縁層7を形成する工程とを有することを特徴とするものである。   The method for manufacturing a multilayer circuit board according to claim 1 of the present invention includes the step of forming a plating base layer 2 on the surface of the insulating base material 1 or the insulating layer 7 described later, and the boundary between the circuit portion 3 and the non-circuit portion 4. The step of removing the plating base layer 2 at the boundary between the circuit portion 3 and the non-circuit portion 4 by irradiating electromagnetic waves along the lines, and the plating base layer 2 remaining in the plating base layer 2 and the non-circuit portion 4 of the circuit portion 3 The plating layer 5 is formed by plating each of the circuit board 3 to form the circuit 11 including the plating base layer 2 and the plating layer 5 on the circuit part 3, and the plating layer 5 of the circuit part 3 and the non-circuit part 4. And a step of forming an insulating layer 7 by attaching an insulating material 6 from above.

この発明によれば、回路部3には所定厚みで回路11を形成することができると共に、非回路部4には同じ厚みでめっき下地層2とめっき層5からなる層を形成することができ、回路部3に形成される絶縁層7と非回路部4に形成される層の間で高さの差がなくなって、絶縁層7の凹凸を小さくすることができるものであり、絶縁層7の表面を研磨して平坦化する工数が不要になると共に、凹凸の小さい絶縁層7の上に精度高く回路11を形成することができるものである。   According to this invention, the circuit 11 can be formed with a predetermined thickness in the circuit portion 3, and the non-circuit portion 4 can be formed with a layer made of the plating underlayer 2 and the plating layer 5 with the same thickness. The difference in height between the insulating layer 7 formed in the circuit portion 3 and the layer formed in the non-circuit portion 4 is eliminated, and the unevenness of the insulating layer 7 can be reduced. This eliminates the need for polishing and flattening the surface of the surface, and allows the circuit 11 to be formed with high accuracy on the insulating layer 7 having small irregularities.

また請求項2の発明は、請求項1において、絶縁層7を形成する部分を囲む突起部8を絶縁性基材1に形成すると共に突起部8の頂部で開口する吸引孔9を形成し、突起部8の内側に液状の絶縁性材料6を充填すると共に突起部8の高さを超えた絶縁性材料6を吸引孔9を通して吸引除去することによって、突起部8の高さの厚みで絶縁層7を形成することを特徴とするものである。   Further, the invention of claim 2 is that in claim 1, the protrusion 8 surrounding the portion where the insulating layer 7 is formed is formed in the insulating base 1 and the suction hole 9 opened at the top of the protrusion 8 is formed. Insulating with the thickness of the height of the projection 8 by filling the inside of the projection 8 with the liquid insulating material 6 and sucking and removing the insulating material 6 exceeding the height of the projection 8 through the suction hole 9. The layer 7 is formed.

この発明によれば、突起部8の高さと同じ厚みで絶縁層7を形成することができ、厚み精度高く絶縁層7を形成して、回路11の層間絶縁性能等を高く得ることができるものである。   According to the present invention, the insulating layer 7 can be formed with the same thickness as the height of the protruding portion 8, and the insulating layer 7 can be formed with high thickness accuracy, so that the interlayer insulation performance of the circuit 11 can be increased. It is.

また請求項3の発明は、請求項1又は2において、絶縁性基材1としてその表面に突起10を設けたものを用いることを特徴とするものである。   The invention of claim 3 is characterized in that, in claim 1 or 2, an insulating substrate 1 having a surface provided with a protrusion 10 is used.

この発明によれば、突起10の周囲に絶縁層7を形成することができ、突起10がアンカーの働きをして絶縁層7が層間剥離することを防ぐことができるものである。   According to the present invention, the insulating layer 7 can be formed around the protrusion 10, and the protrusion 10 can act as an anchor to prevent the insulating layer 7 from being delaminated.

また請求項4の発明は、請求項1乃至3のいずれかにおいて、絶縁性材料6として液状のものを用い、絶縁性材料6を絶縁性基材1に塗布した後に絶縁性基材1を超音波振動させ、この後に絶縁性材料6を硬化させて絶縁層7を形成することを特徴とするものである。   According to a fourth aspect of the present invention, in any one of the first to third aspects, a liquid material is used as the insulating material 6, and the insulating material 6 is applied to the insulating base material 1 and then the insulating base material 1 is used. The insulating layer 7 is formed by sonic-vibrating and thereafter curing the insulating material 6.

この発明によれば、回路部3と非回路部4の間の狭い隙間に絶縁性材料6を確実に浸透させることができ、回路部3の回路11と非回路部4のめっき下地層2及びめっき層5の間の絶縁性を絶縁層7で確実に確保することができるものである。   According to this invention, the insulating material 6 can be surely permeated into a narrow gap between the circuit unit 3 and the non-circuit unit 4, and the circuit 11 of the circuit unit 3 and the plating base layer 2 of the non-circuit unit 4 and The insulation between the plating layers 5 can be reliably ensured by the insulation layer 7.

また本発明の請求項5に係る多層回路基板は、上記請求項1乃至4のいずれかの方法で製造されたものであることを特徴とするものである。   A multilayer circuit board according to a fifth aspect of the present invention is manufactured by the method according to any one of the first to fourth aspects.

この発明によれば、精度高く回路11を形成した多層回路基板を得ることができるものである。   According to the present invention, a multilayer circuit board on which the circuit 11 is formed with high accuracy can be obtained.

本発明によれば、回路部3には所定厚みで回路11を形成することができると共に、非回路部4には同じ厚みでめっき下地層2とめっき層5からなる層を形成することができる。このため、回路部3に形成される絶縁層7と非回路部4に形成される絶縁層7の間で高さの差がなくなって、絶縁層7の凹凸を小さくすることができるものであり、絶縁層7の表面を研磨して平坦化する工数が不要になると共に、凹凸の小さい絶縁層7の上に精度高く回路11を形成することができるものである。特に研磨を行なうことができない立体回路基板において、本発明の効果は大きいものである。   According to the present invention, the circuit 11 can be formed with a predetermined thickness in the circuit portion 3, and the non-circuit portion 4 can be formed with a layer including the plating base layer 2 and the plating layer 5 with the same thickness. . For this reason, there is no difference in height between the insulating layer 7 formed in the circuit portion 3 and the insulating layer 7 formed in the non-circuit portion 4, and the unevenness of the insulating layer 7 can be reduced. In addition, the process of polishing and flattening the surface of the insulating layer 7 becomes unnecessary, and the circuit 11 can be formed with high accuracy on the insulating layer 7 having small unevenness. In particular, the effect of the present invention is significant in a three-dimensional circuit board that cannot be polished.

以下、本発明を実施するための最良の形態を説明する。   Hereinafter, the best mode for carrying out the present invention will be described.

本発明において絶縁性基材1としては、平板基板など任意のものを用いることができるが、本発明では例えば、表面に凹凸を設けたキャビティを有する金型内に溶融樹脂を射出成形することによって得られる、表面が三次元形状となった立体基板を用いることができる(図1等は、平板基板を示す)。例えば、樹脂としてPPA(芳香族ポリアミド)を用い、シリンダ温度300〜350℃、金型温度100〜200℃、射出速度2〜80cc/secの条件で絶縁性基材1を成形することができる。   In the present invention, any material such as a flat substrate can be used as the insulating substrate 1, but in the present invention, for example, by injecting a molten resin into a mold having a cavity having a surface with irregularities. The obtained three-dimensional substrate having a three-dimensional surface can be used (FIG. 1 shows a flat substrate). For example, PPA (aromatic polyamide) is used as the resin, and the insulating base material 1 can be molded under conditions of a cylinder temperature of 300 to 350 ° C., a mold temperature of 100 to 200 ° C., and an injection speed of 2 to 80 cc / sec.

そしてまず、絶縁性基材1の表面に図1(a)のようにめっき下地層2を形成する。めっき下地層2は、例えは銅などの金属のスパッタリングで形成することができるものであり、厚みは0.1〜1μm程度が好ましい。めっき下地層2をこのように銅で形成すれば、後述のように回路部3と非回路部4の境界にレーザ等の電磁波照射をする際に、電磁波を照射した部位の近傍が酸化されて非導電性となり、回路部3と非回路部4の間の絶縁性を高めることができるものである。   First, the plating base layer 2 is formed on the surface of the insulating substrate 1 as shown in FIG. The plating underlayer 2 can be formed by sputtering of a metal such as copper, and the thickness is preferably about 0.1 to 1 μm. If the plating base layer 2 is formed of copper in this way, when an electromagnetic wave such as a laser is applied to the boundary between the circuit part 3 and the non-circuit part 4 as described later, the vicinity of the part irradiated with the electromagnetic wave is oxidized. It becomes non-conductive and can improve the insulation between the circuit portion 3 and the non-circuit portion 4.

次に、絶縁性基材1の表面の回路11を形成する部分である回路部3と、回路11を形成しない部分である非回路部4との境界の領域にレーザ等の電磁波Lを照射し、図1(b)のように回路部3と非回路部4の境界のめっき下地層2を除去する。電磁波としてレーザを用いる場合、めっき下地層2が銅膜であるときには、銅の除去が可能なSHG−YAGレーザ(波長532nm)を使用するのが好ましく、レーザ照射条件は例えば、出力3W、パルス数3ショット、照射時間0.1秒に設定することができる。また、電磁波Lの照射は、形成される回路11のパターンの外形に沿って、つまり回路部3の輪郭に沿って走査させながら行なわれるものであり、非回路部4のうち、回路部3の輪郭の箇所のみのめっき下地層2を除去し、回路部3の輪郭の箇所以外の部分のめっき下地層2は残存させておくものである。回路部3と非回路部4の境界のめっき下地層2を除去する幅は50〜200μm程度の狭い幅に設定するのが好ましい。   Next, an electromagnetic wave L such as a laser is irradiated to a boundary region between the circuit portion 3 which is a portion where the circuit 11 is formed on the surface of the insulating substrate 1 and the non-circuit portion 4 which is a portion where the circuit 11 is not formed. As shown in FIG. 1B, the plating base layer 2 at the boundary between the circuit portion 3 and the non-circuit portion 4 is removed. When a laser is used as the electromagnetic wave, when the plating base layer 2 is a copper film, it is preferable to use an SHG-YAG laser (wavelength: 532 nm) capable of removing copper, and the laser irradiation conditions are, for example, an output of 3 W and a pulse number Three shots and an irradiation time of 0.1 seconds can be set. The irradiation of the electromagnetic wave L is performed while scanning along the outer shape of the pattern of the circuit 11 to be formed, that is, along the contour of the circuit unit 3. The plating base layer 2 is removed only at the contour portion, and the plating base layer 2 at portions other than the contour portion of the circuit portion 3 is left. The width for removing the plating base layer 2 at the boundary between the circuit portion 3 and the non-circuit portion 4 is preferably set to a narrow width of about 50 to 200 μm.

次に、回路部3のめっき下地層2と非回路部4のめっき下地層2にそれぞれ通電しながら絶縁性基板1を銅めっき浴などの電気めっき浴に浸漬等して電気めっきをすることによって、図1(c)のように、回路部3のめっき下地層2の上と、非回路部4のめっき下地層2の上にそれぞれめっき層5を析出させる。めっき層5はそれぞれ10μm程度の厚みで形成するの好ましい。このように回路部3のめっき下地層2の上にめっき層5を設けることによって厚みを有する回路11を形成することができるものである。また非回路部4にもめっき下地層2とめっき層5からなる金属層20が存在するが、この金属層20と回路11との間には隙間があるので、回路11は金属層20と完全に絶縁されている。   Next, by performing electroplating by immersing the insulating substrate 1 in an electroplating bath such as a copper plating bath while energizing the plating base layer 2 of the circuit portion 3 and the plating base layer 2 of the non-circuit portion 4 respectively. As shown in FIG. 1C, the plating layer 5 is deposited on the plating base layer 2 of the circuit portion 3 and on the plating base layer 2 of the non-circuit portion 4. The plating layers 5 are preferably formed with a thickness of about 10 μm. Thus, by providing the plating layer 5 on the plating base layer 2 of the circuit portion 3, the circuit 11 having a thickness can be formed. The non-circuit portion 4 also has a metal layer 20 composed of the plating base layer 2 and the plating layer 5, but there is a gap between the metal layer 20 and the circuit 11, so the circuit 11 is completely connected to the metal layer 20. Is insulated.

このように絶縁性基材1の回路部3において一層目の回路11を形成することができる。そしてこの上にさらに二層目の回路11を形成するにあたっては、まず回路部3及び非回路部4の上にポリイミド等の絶縁樹脂からなる液状の絶縁性材料6を図1(d)のようにノズル15から滴下し、スピンコート等して絶縁性材料6を延ばすと共に硬化させることによって、回路部3の回路11及び非回路部4の金属層20を覆う絶縁層7を図1(e)のように形成する。絶縁層7の形成は、ポリイミド等の絶縁性材料6を蒸着により付着させて形成することもできる。絶縁層7は回路部3の回路11及び非回路部4の金属層20を完全に覆う厚みで形成されるものであり、少なくとも厚み5μmは必要である。   In this way, the first-layer circuit 11 can be formed in the circuit portion 3 of the insulating substrate 1. In forming a second layer circuit 11 thereon, a liquid insulating material 6 made of an insulating resin such as polyimide is first formed on the circuit portion 3 and the non-circuit portion 4 as shown in FIG. The insulating layer 7 that covers the circuit 11 of the circuit portion 3 and the metal layer 20 of the non-circuit portion 4 is formed by dropping from the nozzle 15 onto the substrate 15 and extending and curing the insulating material 6 by spin coating or the like, as shown in FIG. Form as follows. The insulating layer 7 can also be formed by depositing an insulating material 6 such as polyimide by vapor deposition. The insulating layer 7 is formed with a thickness that completely covers the circuit 11 of the circuit portion 3 and the metal layer 20 of the non-circuit portion 4, and at least a thickness of 5 μm is necessary.

ここで、回路部3には厚みの厚い回路11が存在するが、非回路部4にも回路11と同じ厚みのめっき下地層2とめっき層5からなる金属層20が存在するので、回路部3に形成される絶縁層7と非回路部4に形成される絶縁層7の間に高さの差が生じることはなく、図1(e)にみられるように絶縁層7の表面に大きな凹凸が生じることがなくなるものである。回路部3の回路11と非回路部4の金属層20の間には底面が絶縁性基材1の表面となる隙間があるが、この隙間は非常に狭いので、絶縁層7の表面に大きな凹凸を生じさせることはない。従って、絶縁層7を形成した後に、表面を研磨して平坦化するような必要はなくなるものである。   Here, a thick circuit 11 exists in the circuit portion 3, but the non-circuit portion 4 also includes the metal layer 20 including the plating base layer 2 and the plating layer 5 having the same thickness as the circuit 11. No difference in height occurs between the insulating layer 7 formed on the insulating layer 7 and the insulating layer 7 formed on the non-circuit portion 4, and the surface of the insulating layer 7 is large as shown in FIG. Unevenness will not occur. Between the circuit 11 of the circuit unit 3 and the metal layer 20 of the non-circuit unit 4, there is a gap whose bottom surface becomes the surface of the insulating base material 1, but since this gap is very narrow, the surface of the insulating layer 7 is large. There is no unevenness. Therefore, it is unnecessary to polish and flatten the surface after forming the insulating layer 7.

上記のように絶縁層7を形成した後、絶縁層7に一層目の回路11の位置においてレーザ照射等して穴明け加工することによって、一層目の回路11に達する直径0.2〜0.6mmφ程度のビアホール17を図2(a)のように形成する。次に、絶縁層7の上にビアホール17の内周面も含めてめっき下地層2を図2(b)のように形成する。めっき下地層2の形成は、上記と同様に銅のスパッタリングで形成することができるものであり、厚みは0.1〜1μm程度が好ましい。そしてこの後、二層目の回路11を形成する回路部3と非回路部4との境界に沿って上記と同様にレーザ等の電磁波Lを照射して、図2(c)のように回路部3と非回路部4との境界のめっき下地層2を除去し、さらに上記と同様に電気めっきして、回路部3のめっき下地層2の上と、非回路部4のめっき下地層2の上にそれぞれ厚み10μm程度のめっき層5を形成する。このように回路部3のめっき下地層2の上にめっき層5を設けることによって、図2(d)のように、一層目の回路11とビアホール17を通して導通接続された二層目の回路11を絶縁層7の上に形成することができるものである。非回路部4にもめっき下地層2とめっき層5からなる金属層20が存在するが、この金属層20と二層目の回路11との間には隙間があるので、二層目の回路11は金属層20と完全に絶縁されている。   After forming the insulating layer 7 as described above, the insulating layer 7 is drilled by laser irradiation or the like at the position of the first-layer circuit 11 so that the diameter reaching the first-layer circuit 11 is 0.2-0. A via hole 17 of about 6 mmφ is formed as shown in FIG. Next, the plating base layer 2 including the inner peripheral surface of the via hole 17 is formed on the insulating layer 7 as shown in FIG. The plating underlayer 2 can be formed by sputtering copper as described above, and the thickness is preferably about 0.1 to 1 μm. After that, the electromagnetic wave L such as a laser is irradiated along the boundary between the circuit unit 3 and the non-circuit unit 4 forming the second layer circuit 11, and the circuit as shown in FIG. The plating base layer 2 at the boundary between the part 3 and the non-circuit part 4 is removed, and electroplating is performed in the same manner as described above, and the plating base layer 2 of the non-circuit part 4 and the plating base layer 2 of the non-circuit part 4 A plating layer 5 having a thickness of about 10 μm is formed on the substrate. By providing the plating layer 5 on the plating base layer 2 of the circuit portion 3 in this manner, the second-layer circuit 11 that is conductively connected to the first-layer circuit 11 and the via hole 17 as shown in FIG. Can be formed on the insulating layer 7. The non-circuit portion 4 also has a metal layer 20 composed of the plating base layer 2 and the plating layer 5, but there is a gap between the metal layer 20 and the second-layer circuit 11. 11 is completely insulated from the metal layer 20.

このように二層目の回路11を絶縁層7の上に形成するにあたって、絶縁層7は上記のように大きな凹凸なく平坦な表面に形成されているので、凹凸の小さい絶縁層7の上に精度高く回路11を形成することができるものである。そしてさらに図1(d)〜図2(d)の工程を繰り返すことによって、回路11を三層以上の多層に形成することができるものである。   In forming the second layer circuit 11 on the insulating layer 7 in this way, the insulating layer 7 is formed on a flat surface without large irregularities as described above. The circuit 11 can be formed with high accuracy. Further, by repeating the steps of FIGS. 1D to 2D, the circuit 11 can be formed in three or more layers.

図3は本発明の他の実施の形態を示すものであり、絶縁性基材1の上面側の表面に枠状の突起部8が一体に突設してあり、この突起部8の上面の外周部に枠状の堰き止め突部21が突設してある。また突起部8にはその上面と絶縁性基材1の下面とで開口する吸引孔9が穿設してある。そして、この絶縁性基材1の表面上に上記と同様にスパッタリングしてめっき下地層2を形成し、次いで回路部3と非回路部4との境界に沿って上記と同様にレーザ等の電磁波Lを照射して、図3(a)のように回路部3と非回路部4との境界のめっき下地層2を除去する。さらに上記と同様にして、回路部3のめっき下地層2の上と、非回路部4のめっき下地層2の上にそれぞれ電気めっきを施してめっき層5を形成し、図3(b)のように、回路部3にめっき下地層2とめっき層5からなる一層目の回路11を形成すると共に非回路部4にめっき下地層2とめっき層5からなる金属層20を形成する。この後、ノズル15から液状の絶縁性材料6を突起部8で囲まれる内側に図3(b)のように注入して充填する。絶縁性材料6の充填量は、絶縁性材料6の液面が突起部8の上面を超え、堰き止め突部21の高さより低くなるように設定するのが好ましい。次に、吸引孔9の下端の開口から真空圧力0.01MPa程度の吸引力で吸引すると、突起部8で囲まれる内側に充填された絶縁性材料6のうち突起部8の上面を超える部分が吸引孔9を通して図3(c)の矢印のように排出され、絶縁性材料6の液面は突起部8の上面と等しくなる。そしてこの後に絶縁性材料6を硬化させることによって、絶縁層7を形成することができるものである。   FIG. 3 shows another embodiment of the present invention, in which a frame-like projection 8 is integrally projected on the surface on the upper surface side of the insulating substrate 1. A frame-shaped damming projection 21 is provided on the outer periphery. The protrusion 8 is provided with a suction hole 9 that opens between the upper surface thereof and the lower surface of the insulating substrate 1. Then, the plating base layer 2 is formed on the surface of the insulating base material 1 by sputtering in the same manner as described above, and then an electromagnetic wave such as a laser along the boundary between the circuit portion 3 and the non-circuit portion 4 in the same manner as described above. L is irradiated, and the plating base layer 2 at the boundary between the circuit portion 3 and the non-circuit portion 4 is removed as shown in FIG. Further, in the same manner as described above, electroplating is performed on the plating base layer 2 of the circuit portion 3 and the plating base layer 2 of the non-circuit portion 4 to form a plating layer 5, as shown in FIG. As described above, the first circuit 11 including the plating base layer 2 and the plating layer 5 is formed on the circuit portion 3, and the metal layer 20 including the plating base layer 2 and the plating layer 5 is formed on the non-circuit portion 4. Thereafter, the liquid insulating material 6 is injected from the nozzle 15 into the inner side surrounded by the protrusions 8 as shown in FIG. The filling amount of the insulating material 6 is preferably set so that the liquid level of the insulating material 6 exceeds the upper surface of the protrusion 8 and is lower than the height of the damming protrusion 21. Next, when suction is performed from the opening at the lower end of the suction hole 9 with a suction force of a vacuum pressure of about 0.01 MPa, a portion of the insulating material 6 filled on the inner side surrounded by the protrusion 8 exceeds the upper surface of the protrusion 8. It is discharged through the suction hole 9 as shown by the arrow in FIG. 3C, and the liquid level of the insulating material 6 becomes equal to the upper surface of the protrusion 8. Then, the insulating layer 7 can be formed by curing the insulating material 6 thereafter.

ここで、絶縁性材料6のうち突起部8の上面を超える部分が吸引孔9を通して排出されているので、絶縁層7の厚みは突起部8の高さと等しくなるものであり、絶縁層7を厚み精度高く形成することができるものである。この後、上記と同様にして二層目以降の回路11を形成することができる。すなわち、絶縁層7に一層目の回路11の位置において上記と同様にビアホール17を形成し、絶縁層7の上にビアホール17の内周面も含めてめっき下地層2を形成した後、二層目の回路11を形成する回路部3と非回路部4との境界に沿ってレーザ等の電磁波を照射して回路部3と非回路部4との境界のめっき下地層2を除去し、さらに電気めっきを施して回路部3のめっき下地層2の上と、非回路部4のめっき下地層2の上にそれぞれめっき層5を設けることによって、図3(d)のように、回路部3に一層目の回路11とビアホール17を通して導通接続された二層目の回路11を形成することができるものである。   Here, the portion of the insulating material 6 that exceeds the upper surface of the protruding portion 8 is discharged through the suction hole 9, so that the thickness of the insulating layer 7 is equal to the height of the protruding portion 8. It can be formed with high thickness accuracy. Thereafter, the second and subsequent circuits 11 can be formed in the same manner as described above. That is, a via hole 17 is formed in the insulating layer 7 at the position of the first layer circuit 11 in the same manner as described above, and after the plating base layer 2 including the inner peripheral surface of the via hole 17 is formed on the insulating layer 7, two layers are formed. An electromagnetic wave such as a laser is irradiated along the boundary between the circuit part 3 and the non-circuit part 4 forming the circuit 11 of the eye to remove the plating base layer 2 at the boundary between the circuit part 3 and the non-circuit part 4, and By providing the plating layer 5 on the plating base layer 2 of the circuit unit 3 and the plating base layer 2 of the non-circuit unit 4 by performing electroplating, as shown in FIG. Thus, the second-layer circuit 11 that is conductively connected to the first-layer circuit 11 through the via hole 17 can be formed.

図4の実施の形態は、図3の実施の形態の改良形態であり、上記と同様に吸引孔9を備えた突起部8を有する絶縁性基材1を用いる。そして図3(a)(b)(c)と同様にして、めっき下地層2を形成した後、回路部3と非回路部4との境界に沿って電磁波を照射し、回路部3と非回路部4のめっき下地層2にめっき層5を設けて一層目の回路11及び金属層20に回路を形成し、さらに突起部8の内側に絶縁性材料6を充填して吸引孔9から吸引した後に、絶縁性材料6を硬化させて絶縁層7を形成し、回路部3の回路11と非回路部4の金属層20を絶縁層7で被覆する。そして次いで、図4(a)のように絶縁層7に一層目の回路11の位置において上記と同様に直径0.6mm程度のビアホール17を形成する。ビアホール17は既述と同様にレーザ照射によって形成することができる。この後、絶縁性基材1の上面に全面スパッタリングを行ない、絶縁層7の表面にビアホール17の内周面も含めてめっき下地層2を形成する。このように絶縁性基材1の上面に全面スパッタリングを行なうと、図4(b)に示すように、突起部8の上面に開口する吸引孔9の上部の内周にもめっき下地層2が形成される。   The embodiment shown in FIG. 4 is an improved form of the embodiment shown in FIG. 3, and uses the insulating base material 1 having the protrusions 8 provided with the suction holes 9 as described above. 3A, 3B, and 3C, after forming the plating base layer 2, the electromagnetic wave is irradiated along the boundary between the circuit portion 3 and the non-circuit portion 4, and the circuit portion 3 and the non-circuit portion 3 are not exposed. A plating layer 5 is provided on the plating base layer 2 of the circuit part 4 to form a circuit on the first circuit 11 and the metal layer 20, and the insulating material 6 is filled inside the protrusion 8 and sucked from the suction hole 9. After that, the insulating material 6 is cured to form the insulating layer 7, and the circuit 11 of the circuit portion 3 and the metal layer 20 of the non-circuit portion 4 are covered with the insulating layer 7. Then, as shown in FIG. 4A, via holes 17 having a diameter of about 0.6 mm are formed in the insulating layer 7 at the position of the first circuit 11 in the same manner as described above. The via hole 17 can be formed by laser irradiation as described above. Thereafter, the entire surface of the insulating substrate 1 is sputtered to form the plating base layer 2 on the surface of the insulating layer 7 including the inner peripheral surface of the via hole 17. When the entire surface of the insulating base material 1 is thus sputtered, the plating base layer 2 is also formed on the inner periphery of the upper portion of the suction hole 9 opened on the upper surface of the protrusion 8 as shown in FIG. It is formed.

そして二層目の回路11を形成する回路部3と非回路部4との境界に沿ってこのめっき下地層2に電磁波を照射した後、回路部3と非回路部4の各めっき下地層2に通電して絶縁性基材1を銅めっき浴などの電気めっき浴に浸漬することによって、回路部3と非回路部4の各めっき下地層2に厚み20μm程度のめっき層5を図4(c)のように設ける。このように電気めっきを行なう際に、ビアホール17の内周と吸引孔9の上部の内周にもめっき下地層2が付着しているので、ビアホール17内や吸引孔9の上部内にもめっきが析出してめっき層5で充填される。従って、二層目の回路11を形成するためのめっきによって、吸引孔9の上部を図4(c)のようにめっき層5で塞ぐことができるものである。三層目の回路11を形成するためには、二層目の回路11の上に絶縁性材料6を充填して絶縁層7を形成する必要があるが、吸引孔9はめっき層5で塞がれているので、充填した絶縁性材料6がこの吸引孔9から漏れ出すことを防ぐことができ、二層目以降の絶縁層7の形成に吸引孔9が支障になることがなくなり、多層化が容易になるものである。   Then, after irradiating the plating base layer 2 with an electromagnetic wave along the boundary between the circuit unit 3 and the non-circuit unit 4 forming the second layer circuit 11, each plating base layer 2 of the circuit unit 3 and the non-circuit unit 4 is used. 4 is immersed in an electroplating bath such as a copper plating bath to form a plating layer 5 having a thickness of about 20 μm on each plating base layer 2 of the circuit portion 3 and the non-circuit portion 4 as shown in FIG. c). When electroplating is performed in this way, the plating base layer 2 is also attached to the inner periphery of the via hole 17 and the upper periphery of the suction hole 9, so that the plating is also performed in the via hole 17 and the upper portion of the suction hole 9. Is deposited and filled with the plating layer 5. Therefore, the upper part of the suction hole 9 can be closed with the plating layer 5 as shown in FIG. 4C by plating for forming the circuit 11 of the second layer. In order to form the third layer circuit 11, it is necessary to fill the insulating material 6 on the second layer circuit 11 to form the insulating layer 7, but the suction hole 9 is blocked by the plating layer 5. Therefore, it is possible to prevent the filled insulating material 6 from leaking out from the suction hole 9, and the suction hole 9 does not hinder the formation of the second and subsequent insulating layers 7. It becomes easy to make.

図5は本発明の他の実施の形態を示すものであり、絶縁性基材1の表面に突起10が設けてある。突起10は絶縁性基材1の表面の全面に亘って多数設けるのが好ましいが、図5には一個の突起10を設けた部分のみを図示している。そして、まずこの絶縁性基材1の表面に上記と同様にスパッタリングして、図5(a)のように、突起10の上面や側面も含めて全面にめっき下地層2を形成する。次に、一層目の回路11を形成する回路部3と非回路部4との境界に沿って上記と同様にレーザ等の電磁波を照射して境界のめっき下地層2を除去し、さらに上記と同様にして、回路部3のめっき下地層2の上と、非回路部4のめっき下地層2の上にそれぞれ電気めっきを施してめっき層5を形成し、図5(b)のように、回路部3にめっき下地層2とめっき層5からなる一層目の回路11を形成すると共に、非回路部4となる突起10の部分にめっき下地層2とめっき層5からなる金属層20を形成する。   FIG. 5 shows another embodiment of the present invention, in which protrusions 10 are provided on the surface of the insulating substrate 1. Although it is preferable to provide a large number of protrusions 10 over the entire surface of the insulating base material 1, FIG. 5 shows only a portion where one protrusion 10 is provided. First, sputtering is performed on the surface of the insulating base material 1 in the same manner as described above, and the plating base layer 2 is formed on the entire surface including the upper surface and side surfaces of the protrusion 10 as shown in FIG. Next, an electromagnetic wave such as a laser is irradiated along the boundary between the circuit portion 3 and the non-circuit portion 4 forming the first layer circuit 11 to remove the plating base layer 2 at the boundary, and Similarly, electroplating is performed on the plating base layer 2 of the circuit part 3 and the plating base layer 2 of the non-circuit part 4 to form a plating layer 5, as shown in FIG. A first layer circuit 11 composed of the plating base layer 2 and the plating layer 5 is formed on the circuit part 3, and a metal layer 20 composed of the plating base layer 2 and the plating layer 5 is formed on the protrusion 10 serving as the non-circuit part 4. To do.

このように絶縁性基材1の回路部3において一層目の回路11を形成した後、この上にさらに二層目の回路11を形成するにあたっては、まず図5(c)のように、突起10の周囲において回路部3の一層目の回路11を被覆するように絶縁層7を形成する。絶縁層の7の形成は上記と同様にして行なうことができる。そして一層目の回路11の位置において絶縁層7に上記と同様にビアホール17を形成し、さらにビアホール17の内周を含む全面スパッタリングを行なって図5(d)のようにめっき下地層2を形成する。この後、二層目の回路11を形成する回路部3と非回路部4との境界に沿って電磁波を照射して境界のめっき下地層2を除去し、さらに回路部3のめっき下地層2と非回路部4のめっき下地層2にそれぞれ電気めっきしてめっき層5を設けることによって、図5(e)のように、回路部3に一層目の回路11とビアホール17を通して導通接続された二層目の回路11を形成することができるものである。三層目以降の回路11を形成する場合には、突起10の周囲においてこの回路11の上に絶縁層7を形成し、後は上記と同様な工程で回路形成をすることによって行なうことができるものである。   After forming the first layer circuit 11 in the circuit portion 3 of the insulating base material 1 in this way, when forming the second layer circuit 11 on this, first, as shown in FIG. An insulating layer 7 is formed so as to cover the first circuit 11 of the circuit portion 3 around the circuit 10. The formation of the insulating layer 7 can be performed in the same manner as described above. Then, via holes 17 are formed in the insulating layer 7 at the position of the circuit 11 in the first layer in the same manner as described above, and the entire surface including the inner periphery of the via holes 17 is sputtered to form the plating base layer 2 as shown in FIG. To do. Thereafter, electromagnetic wave is irradiated along the boundary between the circuit portion 3 and the non-circuit portion 4 forming the second layer circuit 11 to remove the plating base layer 2 at the boundary, and the plating base layer 2 of the circuit portion 3 is further removed. By providing electroplating on the plating base layer 2 of the non-circuit portion 4 and providing the plating layer 5, the circuit portion 3 is electrically connected to the circuit portion 3 through the via hole 17 as shown in FIG. The second layer circuit 11 can be formed. In the case of forming the circuit 11 after the third layer, the insulating layer 7 is formed on the circuit 11 around the protrusion 10, and thereafter, the circuit is formed by the same process as described above. Is.

上記のように突起10を設けた絶縁性基材1を用いる場合、図5(c)〜(e)にみられるように、絶縁層7は絶縁性基材1の表面に突出する突起10の周囲に形成され、突起10はくさびのように絶縁層7を突き抜けるようになっており、絶縁層7は絶縁性基材1の表面や回路11等の表面の他に突起10の外周部にも接着されている。従って、突起10の外周部が絶縁層7に接着していることによるアンカー作用で、絶縁層7の接着強度が向上し、絶縁層7が層間剥離することを防ぐことができるものである。   When the insulating base material 1 provided with the protrusions 10 is used as described above, the insulating layer 7 is formed of the protrusions 10 protruding on the surface of the insulating base material 1 as seen in FIGS. Protrusions 10 are formed around the insulating layer 7 like a wedge, and the insulating layer 7 is not only on the surface of the insulating substrate 1 or the surface of the circuit 11 but also on the outer periphery of the protrusion 10. It is glued. Therefore, the anchoring action by the outer peripheral portion of the protrusion 10 being adhered to the insulating layer 7 can improve the adhesive strength of the insulating layer 7 and prevent the insulating layer 7 from delamination.

ここで、上記の各実施の形態のように、絶縁性基材1に液状の絶縁性材料6を供給し、絶縁性材料6を硬化させて絶縁層7を形成するにあたって、液状の絶縁性材料6を供給した後に絶縁性基材1に超音波振動装置等を用いて超音波振動させるのが好ましい。回路部3の回路11と非回路部4の金属層20との間の隙間は狭く形成されており、液状樹脂で形成される絶縁性材料6はこの隙間に浸入し難く、充填不良が発生し易いものであり、このような充填不良があると、回路部3の回路11と非回路部4の金属層20の間の絶縁性を絶縁層7で確保できなくなるおそれがある。そこで、液状の絶縁性材料6を供給した後に絶縁性基材1を超音波振動させることによって、液状の絶縁性材料6を回路部3の回路11と非回路部4の金属層20の間の狭い隙間に浸透させ、充填不良が発生することを防ぐようにしたものであり、回路部3の回路11と非回路部4の金属層20の間の絶縁性を絶縁層7で確実に確保することができるものである。超音波振動は、60kHz程度の周波数で2分間程度行なうのが好ましい。   Here, as in each of the above-described embodiments, the liquid insulating material 6 is supplied to the insulating substrate 1 and the insulating material 6 is cured to form the insulating layer 7. After supplying 6, it is preferable to ultrasonically vibrate the insulating substrate 1 using an ultrasonic vibration device or the like. The gap between the circuit 11 of the circuit portion 3 and the metal layer 20 of the non-circuit portion 4 is narrow, and the insulating material 6 formed of a liquid resin is difficult to enter the gap, resulting in poor filling. If there is such a filling defect, there is a possibility that the insulating layer 7 cannot secure insulation between the circuit 11 of the circuit unit 3 and the metal layer 20 of the non-circuit unit 4. Therefore, the insulating substrate 1 is ultrasonically vibrated after the liquid insulating material 6 is supplied, so that the liquid insulating material 6 is placed between the circuit 11 of the circuit unit 3 and the metal layer 20 of the non-circuit unit 4. It penetrates into a narrow gap to prevent the occurrence of poor filling, and the insulating layer 7 ensures the insulation between the circuit 11 of the circuit part 3 and the metal layer 20 of the non-circuit part 4 with certainty. It is something that can be done. The ultrasonic vibration is preferably performed for about 2 minutes at a frequency of about 60 kHz.

また、上記の各実施の形態において、非回路部4の金属層20は回路部3の回路11とは導通接続されておらず、回路としての機能を有しないいわゆるダミー回路として形成されているが、この金属層20は絶縁性基材1の全面に配置して設けられているので、金属層20を高周波シールド層として利用することができる。この場合、非回路部4のめっき下地層2同士を導通接続させることによって、金属層20の高周波シールド特性を高く得ることができるものである。また、金属層20を電源回路や接地回路などとして利用することも可能である。   In each of the above embodiments, the metal layer 20 of the non-circuit portion 4 is not conductively connected to the circuit 11 of the circuit portion 3 and is formed as a so-called dummy circuit that does not have a function as a circuit. Since the metal layer 20 is disposed on the entire surface of the insulating substrate 1, the metal layer 20 can be used as a high-frequency shield layer. In this case, high-frequency shielding characteristics of the metal layer 20 can be obtained by electrically connecting the plating base layers 2 of the non-circuit portion 4 to each other. In addition, the metal layer 20 can be used as a power supply circuit, a ground circuit, or the like.

本発明の実施の形態の一例を示すものであり、(a)〜(e)はそれぞれ各工程の断面図である。An example of embodiment of this invention is shown, (a)-(e) is sectional drawing of each process, respectively. 本発明の実施の形態の一例を示すものであり、(a)〜(d)はそれぞれ各工程の断面図である。An example of embodiment of this invention is shown and (a)-(d) is sectional drawing of each process, respectively. 本発明の他の実施の形態の一例を示すものであり、(a)〜(d)はそれぞれ各工程の断面図である。An example of other embodiment of this invention is shown, (a)-(d) is sectional drawing of each process, respectively. 本発明の他の実施の形態の一例を示すものであり、(a)〜(c)はそれぞれ各工程の断面図である。An example of other embodiment of this invention is shown, (a)-(c) is sectional drawing of each process, respectively. 本発明の他の実施の形態の一例を示すものであり、(a)〜(e)はそれぞれ各工程の断面図である。An example of other embodiment of this invention is shown, (a)-(e) is sectional drawing of each process, respectively. 従来例を示すものであり、(a),(c),(d)はそれぞれ断面図、(b)は断面図と平面図である。It shows a conventional example, (a), (c), (d) is a sectional view, respectively, (b) is a sectional view and a plan view. 従来例を示すものであり、(a)〜(d)はそれぞれ各工程の断面図である。A prior art example is shown, (a)-(d) is sectional drawing of each process, respectively. 従来例を示すものであり、(a)〜(d)はそれぞれ各工程の断面図である。A prior art example is shown, (a)-(d) is sectional drawing of each process, respectively.

符号の説明Explanation of symbols

1 絶縁性基材
2 めっき下地層
3 回路部
4 非回路部
5 めっき層
6 絶縁性材料
7 絶縁層
8 突起部
9 吸引孔
10 突起
11 回路
DESCRIPTION OF SYMBOLS 1 Insulating base material 2 Plating underlayer 3 Circuit part 4 Non-circuit part 5 Plating layer 6 Insulating material 7 Insulating layer 8 Protruding part 9 Suction hole 10 Protruding 11 Circuit

Claims (5)

絶縁性基材又は後記絶縁層の表面にめっき下地層を形成する工程と、回路部と非回路部との境界に沿って電磁波を照射して回路部と非回路部との境界のめっき下地層を除去する工程と、回路部のめっき下地層と非回路部に残存するめっき下地層にそれぞれめっきを施してめっき層を形成することによって、回路部にめっき下地層とめっき層からなる回路を形成する工程と、回路部及び非回路部のめっき層の上から絶縁性材料を付着させて絶縁層を形成する工程とを有することを特徴とする多層回路基板の製造方法。   A step of forming a plating base layer on the surface of the insulating base or the insulating layer described later, and a plating base layer at the boundary between the circuit portion and the non-circuit portion by irradiating electromagnetic waves along the boundary between the circuit portion and the non-circuit portion And forming a plating layer by plating each of the plating base layer in the circuit part and the plating base layer remaining in the non-circuit part, thereby forming a circuit composed of the plating base layer and the plating layer in the circuit part. And a step of forming an insulating layer by depositing an insulating material on the plating layer of the circuit portion and the non-circuit portion. 絶縁層を形成する部分を囲む突起部を絶縁性基材に形成すると共に突起部の頂部で開口する吸引孔を形成し、突起部の内側に液状の絶縁性材料を充填すると共に突起部の高さを超えた絶縁性材料を吸引孔を通して吸引除去することによって、突起部の高さの厚みで絶縁層を形成することを特徴とする請求項1に記載の多層回路基板の製造方法。   Protrusions that surround the part where the insulating layer is to be formed are formed in the insulating base material, suction holes are formed at the tops of the projecting parts, a liquid insulating material is filled inside the projecting parts, and the height of the projecting parts is increased. 2. The method of manufacturing a multilayer circuit board according to claim 1, wherein an insulating layer having a thickness as high as the protrusion is formed by sucking and removing an insulating material exceeding the thickness through a suction hole. 絶縁性基材としてその表面に突起を設けたものを用いることを特徴とする請求項1又は2に記載の多層回路基板の製造方法。   The method for producing a multilayer circuit board according to claim 1 or 2, wherein an insulating substrate having a protrusion on its surface is used. 絶縁性材料として液状のものを用い、絶縁性材料を絶縁性基材に付着させた後に絶縁性基材を超音波振動させ、この後に絶縁性材料を硬化させて絶縁層を形成することを特徴とする請求項1乃至3のいずれかに記載の多層回路基板の製造方法。   A liquid material is used as an insulating material, the insulating material is adhered to the insulating base material, the insulating base material is ultrasonically vibrated, and then the insulating material is cured to form an insulating layer. A method for manufacturing a multilayer circuit board according to any one of claims 1 to 3. 上記請求項1乃至4のいずれかの方法で製造されたものであることを特徴とする多層回路基板。
A multilayer circuit board manufactured by the method according to any one of claims 1 to 4.
JP2003394675A 2003-11-25 2003-11-25 Multi-layer circuit board and its manufacturing method Pending JP2005158973A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7638873B2 (en) 2005-12-01 2009-12-29 Nitto Denko Corporation Wired circuit board
US7723617B2 (en) 2006-08-30 2010-05-25 Nitto Denko Corporation Wired circuit board and production method thereof
US8134080B2 (en) 2005-07-07 2012-03-13 Nitto Denko Corporation Wired circuit board
WO2012074563A2 (en) * 2010-01-21 2012-06-07 Henkel Corporation Ultrasonic assisted filling of cavities
KR101218308B1 (en) * 2008-03-14 2013-01-03 삼성테크윈 주식회사 Method of manufacturing printed circuit board
US8760815B2 (en) 2007-05-10 2014-06-24 Nitto Denko Corporation Wired circuit board

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8134080B2 (en) 2005-07-07 2012-03-13 Nitto Denko Corporation Wired circuit board
US7638873B2 (en) 2005-12-01 2009-12-29 Nitto Denko Corporation Wired circuit board
US7723617B2 (en) 2006-08-30 2010-05-25 Nitto Denko Corporation Wired circuit board and production method thereof
US8266794B2 (en) 2006-08-30 2012-09-18 Nitto Denko Corporation Method of producing a wired circuit board
US8760815B2 (en) 2007-05-10 2014-06-24 Nitto Denko Corporation Wired circuit board
KR101218308B1 (en) * 2008-03-14 2013-01-03 삼성테크윈 주식회사 Method of manufacturing printed circuit board
WO2012074563A2 (en) * 2010-01-21 2012-06-07 Henkel Corporation Ultrasonic assisted filling of cavities
WO2012074563A3 (en) * 2010-01-21 2012-08-23 Henkel Corporation Ultrasonic assisted filling of cavities

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