JP2005157219A - Method for manufacturing electrooptical device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an electrooptical device with which a scattering reflective surface is formed on a surface uneven shape formed by transferring an uneven shape of a pattern, the manufacturing method being characterized in that a displacement of the surface uneven shape is reducible and a manufacturing step is not made complicated. <P>SOLUTION: The method for manufacturing the electrooptical device is a method for manufacturing an electrooptical device having a reflecting layer on one substrate, and includes an insulating layer forming step of forming a patterned insulating layer 2 on the one substrate 1, an unevenness transferring step of transferring the uneven shape to the surface of the insulating layer by pressing a pattern 4 positioned by using a structure pattern 3 formed on the one substrate against the insulating layer, and a reflecting layer forming step of forming the reflecting layer so that the scattering reflective surface on which the uneven shape is reflected is obtained on the insulating layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing an electro-optical device, and more particularly, to a method for manufacturing an electro-optical device including a reflective layer that reflects incident light from the outside.

  In recent years, a display unit of a portable information terminal such as a mobile phone (mobile phone / cellular) or a PDA (Personal Digital Assistance) has a reflective liquid crystal display device or a transflective type in order to reduce power consumption. Liquid crystal display devices are widely used. These liquid crystal display devices are provided with a reflective layer for performing display by reflecting light incident from the display surface side. And it is common that the scattering reflective surface provided with many fine unevenness | corrugations is formed in the surface of this reflection layer. When a scattering reflective surface is formed on the surface of the reflective layer in this manner, external light is scattered and the direction of reflection is dispersed, so the amount of reflected light in the line-of-sight direction compared to when the surface of the reflective layer is formed as a flat mirror surface Since the display can be increased, the display can be brightened, and the illusion caused by the illumination light and the reflection of the background can be prevented.

  The scattering reflective surface of the reflective layer is formed by various methods. For example, by forming a fine uneven shape on the surface of the substrate by etching or the like, and forming a metal thin film such as Al on this, A method of forming a reflecting surface reflecting the uneven shape of the substrate surface, applying a photosensitive resin on the surface of the substrate, exposing the photosensitive resin with a predetermined mask, and developing it by using a photolithography method to form an insulating layer A method of forming a reflective surface reflecting the surface unevenness by forming a fine surface unevenness and forming a metal thin film on the surface, or by applying a photolithography method similar to the above to the insulating layer on the substrate After forming a fine surface irregularity shape and softening the insulating layer by heating, the surface irregularity shape is made smooth, and then a metal thin film is formed on the surface irregularity shape. And a method of forming a reflective surface that reflects Jo is common.

  However, in the method of etching the substrate surface and the method of forming an insulating layer having a surface uneven shape by photolithography, the uneven shape of the scattering reflective surface of the reflective layer is greatly increased depending on the state of etching or photolithography. Since it fluctuates, the controllability of the light reflection characteristics of the scattering reflecting surface is not necessarily good. Therefore, there are problems that it is difficult to obtain scattering characteristics suitable for the scattering reflecting surface and the reproducibility is low.

  In view of such circumstances, a manufacturing method has been devised in which a mold having an uneven surface of a predetermined shape is pressed onto a substrate, the uneven surface of the mold is transferred, and a reflective film is formed thereon (for example, (See Patent Documents 1 and 2).

  In Patent Document 1, a photosensitive insulating layer is applied on a substrate, and an insulating layer having a concavo-convex surface is formed by irradiating the photosensitive insulating layer with a light beam in a state where a mold having a concavo-convex surface is pressed and cured. A method is described in which a reflective film is formed on the uneven surface of the insulating layer.

Further, in Patent Document 2, an uneven surface portion having predetermined unevenness is formed in a portion where a reflective pixel electrode is formed by transfer using a mold, a flat surface portion is formed in another portion, and an uneven surface portion is formed. Describes a method of forming a reflective film and forming active elements and wirings on a flat surface portion.
Japanese Patent Laid-Open No. 10-232303 Japanese Patent Laid-Open No. 2002-23181

  However, in the above-described conventional method, when the uneven shape is transferred using a mold to the photosensitive insulating layer coated on the substrate or the substrate itself, since there is no lower layer structure, the outer edge of the substrate (end surface of the substrate) is removed. Although it is necessary to position the mold as a reference, such a positioning method tends to cause misalignment of the mold. For this reason, there is a problem that it is difficult to ensure the consistency of the positional relationship between the transferred concavo-convex shape surface and the wiring, electrode, element structure and the like formed thereon.

  In particular, if the uneven shape is transferred to the peripheral non-display area outside the display area to form a scattering reflective surface, the non-display area may appear bright and appear white. It is conceivable to form a flat surface in the region corresponding to the non-display area in order to prevent the non-display area. The uneven shape may be transferred to a part of the display area, or a part of the display area that should have a scattering reflective surface (surface uneven shape) may be formed flat. The appearance may be greatly affected.

  Further, in the manufacturing method of Patent Document 1 described above, the uncured photosensitive insulating layer is photocured in a state where the mold is pressed, but in this method, it is difficult to pattern the insulating layer. Therefore, there is a problem in that it is difficult to adopt in an active matrix type liquid crystal display device that requires a complicated substrate structure having active elements.

  Furthermore, in the manufacturing method of Patent Document 2 described above, the uneven surface portion is partially formed on the surface of the substrate, and the active element is formed on the flat surface portion where the unevenness is not formed, so the uneven surface portion is formed. There is no need to pattern the substrate, but when the above-described mold misalignment occurs, an uneven shape is transferred to a part of the region that should be a flat surface portion, and this is an active element formed thereon This may affect the structure of the device and cause a failure of the device.

  Therefore, the present invention solves the above-described problems, and the problem is that in a method of manufacturing an electro-optical device that forms a scattering reflective surface on a surface uneven shape formed by transferring an uneven shape by a mold, An object of the present invention is to provide a manufacturing method capable of reducing the positional deviation of the surface irregularity shape and not causing the manufacturing process to be complicated.

  In order to solve the above-described problem, an electro-optical device manufacturing method according to the present invention includes a pair of substrates arranged to face each other with an electro-optical layer interposed therebetween, and a reflection layer provided on one of the pair of substrates. And an insulating layer forming step for forming an insulating layer patterned on the one substrate, and a mold positioned using the structural pattern formed on the one substrate is pressed against the insulating layer. An unevenness forming step for forming an uneven shape on the surface of the insulating layer, and a reflective layer forming step for forming the reflective layer on the insulating layer so that a scattering reflective surface reflecting the uneven shape is obtained. It is characterized by having.

  According to this invention, after the patterned insulating layer is formed, the concavo-convex shape is transferred to the insulating layer, so that the insulating layer can be easily patterned according to the required substrate structure. In addition, the positioning accuracy of the transferred concavo-convex shape can be improved by positioning the mold using the structural pattern formed on the substrate. Therefore, it is possible to achieve both improvement in accuracy of the substrate structure and simplification of the manufacturing process.

  In the present invention, it is preferable that the structural pattern is a shape pattern of the insulating layer patterned in the insulating layer forming step or an alignment mark patterned simultaneously with the same material as the insulating layer. According to this, since only the insulating layer is patterned in the insulating layer forming step, the shape pattern of the insulating layer and the alignment mark that are used as a reference for positioning the mold in the unevenness transfer step are formed. It is possible to improve the transfer accuracy of the surface uneven shape without complication.

  In the present invention, it is preferable that an element forming step of forming an active element on the one substrate is provided, and the structural pattern is an active element forming pattern or an alignment mark patterned simultaneously with the same material. . According to this, since the positioning of the mold is performed using the shape pattern of the active element and the alignment mark that matches the shape pattern, the positional accuracy of the transferred concavo-convex shape can be improved.

  Here, the element forming step may be performed before or after the insulating layer forming step. However, since the insulating layer is patterned in the insulating layer forming step, a contact hole or the like can be easily formed in the insulating layer. Therefore, it is more preferable to perform the insulating layer forming step after the element forming step. In this case, since the active element is formed in the lower layer of the insulating layer, it is possible to dispose the scattering reflective surface of the reflective layer above the active element, and the storage capacitor provided along with the active element It is also possible to form a scattering reflective surface above the light source, so that the substantial aperture ratio can be increased and a bright reflective display can be realized. Further, by performing the element forming step before the insulating layer forming step, the element structure and alignment marks formed in the element forming step can be used also when patterning the insulating layer.

  In the present invention, it is preferable that the structural pattern is disposed at a position outside a planar occupation range of the mold when the mold is planarly overlapped on the one substrate. According to this, since the structure pattern serving as a reference for positioning the mold is arranged at a position outside the planar occupation range of the mold, the positioning of the mold can be easily performed. In addition, since the structure pattern is not pressed by the mold at the time of transferring the concavo-convex shape by the above configuration, there is no problem as a positioning reference in the subsequent process, for example, a reflective layer forming process described later. Can be used.

  In the present invention, the mold is preferably provided with a notch or an opening for arranging the structural pattern at a position outside the planar occupation range of the mold. Thus, a notch or an opening can be provided in the mold, and the structure pattern can be viewed through the notch or opening through the mold. In this case, restrictions on the shape of the mold for avoiding the structural pattern are further reduced, so that the concavo-convex shape can be transferred in a wider and free range.

  In the present invention, in the reflective layer forming step, the reflective layer is preferably formed by positioning using the structural pattern. By positioning the reflective layer using the structural pattern used for positioning the mold, the consistency between the surface irregularities transferred to the insulating layer and the pattern of the reflective layer can be further improved.

  In the present invention, the insulating layer forming step preferably includes a step of placing a photosensitive resin on the one substrate and a step of patterning by exposing and developing the photosensitive resin. As a result, a patterned insulating layer can be formed very easily. In particular, the present invention is characterized in that the insulating layer is patterned before transferring the concavo-convex shape to the insulating layer. Therefore, it is very effective that the insulating layer forming step can be easily performed.

  In the present invention, the method includes an element forming step of forming an active element on the one substrate and a step of forming an electrode conductively connected to the active element. In the insulating layer forming step, the insulating layer includes the It is preferable that an opening for conductively connecting the active element and the electrode is provided. According to this, an insulating layer is formed on the active element formed on the substrate, an electrode is formed on the insulating layer, and the active element and the electrode are conductively connected through the opening of the insulating layer. can do. Accordingly, it is possible to configure the electrode and the reflective layer so as to overlap the active element, so that the substantial aperture ratio can be improved. In this case, the electrode may be constituted by the reflective layer, or may be constituted by a material different from the reflective layer, for example, a transparent conductor.

  In the present invention, the insulating layer forming step may include a step of applying a photosensitive resin, a step of exposing the photosensitive resin, and a step of developing the photosensitive resin to form the opening. preferable. According to this, an insulating layer having an opening can be very easily formed by a normal photolithography technique. In this case, it is desirable that the photosensitive resin is subjected to a heat treatment and cured after the unevenness transfer step. As a result, in the concavo-convex transfer process, the photosensitive resin can be processed in a state where it can be plastically deformed to a certain degree, thereby ensuring transferability. Appropriate hardness can be imparted to the layer.

  Next, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Each embodiment described below shows an example configured as a liquid crystal display device. However, the present invention is not limited to a liquid crystal display device, but an electroluminescence device, an organic electroluminescence device, a plasma display device, and electrophoresis. The present invention can be similarly applied to various electro-optical devices such as a display device and a device using an electron-emitting device (Field Emission Display, Surface-Conduction Electron-Emitter Display, etc.).

  First, an outline of a plurality of embodiments of the present invention will be described, and then a plurality of examples as specific modes that can be adopted in each embodiment will be described.

[First Embodiment]
First, the outline of the first embodiment according to the present invention will be described with reference to FIG. FIG. 1 is a schematic process diagram showing an outline of the manufacturing method of the liquid crystal display device of the first embodiment.

  In the first embodiment, first, as shown in the plan view of FIG. 1A-1 and the side view of FIG. 1A-2, on the surface of the mother substrate 1 made of glass or plastic, The patterned insulating layer 2 is formed (insulating layer forming step). As the insulating layer 2, various insulating materials composed of synthetic resins such as acrylic resins and various inorganic materials such as inorganic oxides can be used. For example, as will be described in detail later, a photosensitive resin is applied onto the surface of the mother substrate 1, and then an exposure process is performed using a light source that matches the exposure characteristics of the photosensitive resin, followed by a development process. Thereby, the insulating layer 2 having the illustrated planar shape can be formed. In the illustrated example, a plurality of insulating layers 2 are arranged in a plane (vertically and horizontally) on the mother substrate 1. Each of the insulating layers 2 is disposed in a device planned area that will eventually become a part of the electro-optical device.

  At this time, a plurality of alignment marks 3 are formed together with the insulating layer 2, that is, simultaneously with the same material as the insulating layer 2, on the peripheral portion of the mother substrate 1 (in the illustrated example, the corner portion of the rectangular mother substrate 1). Here, the insulating layer 2 and the alignment mark 3 may have other structural patterns (including alignment marks) already formed on the mother substrate 1 itself (for example, the position of the substrate end face) or before the insulating layer 2 is formed. In the case of being formed on the substrate 1, it is formed by performing a patterning process on the basis of the structure pattern.

  Next, as shown in the plan view of FIG. 1B-1 and the side view of FIG. 1B-2, the mold 4 is disposed above the mother substrate 1 and the mother substrate 1 is used using the alignment mark 3 described above. And relative positioning of the mold 4 in the plane direction. Here, the mold 4 has a mold surface 4 a having a concavo-convex shape to be transferred to the surface of the insulating layer 2. In the illustrated example, a plurality of the mold surfaces 4a are arranged in a plane corresponding to the planar shape of the individual insulating layers 2 described above. The mold 4 is positioned by, for example, placing the mother substrate 1 on a movable table 5 (for example, an XYθ table) and observing the alignment mark 3 from the back of the mold 4 as shown in the illustrated example. This is done by moving and adjusting the movable table 5 so that the mark 3 is at a predetermined position with respect to the mold 4.

  At this time, when the mold 4 is disposed at a regular planar position with respect to the mother substrate 1, the alignment mark 3 on the mother substrate 1 is disposed at a position outside the planar occupation range of the mold 4. It is configured. Specifically, a notch 4b is formed at a corner of the mold 4 having a rectangular planar shape, and the alignment mark 3 can be viewed from behind the mold 4 through the notch 4b.

  The above positioning (alignment) can be performed by various methods. For example, even if the position of the movable table 5 is manually adjusted so that the alignment mark 3 and the image of the mold 4 obtained by the image pickup means installed behind (above) the mold 4 are aligned with each other. Alternatively, the image may be processed by an appropriate processing means (such as a microprocessor) and the position of the movable table 5 may be automatically adjusted according to the result.

  As shown in FIG.1 (c), the fine uneven | corrugated shape is formed in the type | mold surface 4a provided in the said type | mold 4, and by pressing the type | mold 4 against the insulating layer 2, an insulating layer is simultaneously simultaneous as needed. By heating 2, the above uneven shape is transferred to the insulating layer 2 as shown by a two-dot chain line in the figure, and the surface uneven shape 2 a is formed on the insulating layer 2 (uneven transfer step). Note that FIG. 1C shows the actual concavo-convex shape greatly enlarged as compared with the dimensions of the mold surface 4a and the insulating layer 2 in the plane direction. Actually, the insulating layer 2 is formed over substantially the entire liquid crystal sealing region of the liquid crystal display device to be finally formed, while the uneven shape transferred to the surface of the insulating layer 2 is formed thereon. The reflective layer to be formed is extremely fine so as to constitute a scattering reflective surface. For example, the period of the concavo-convex shape is usually about 5 to 30 μm. In addition, the thickness of the insulating layer 2 is also greatly exaggerated as compared with the dimension in the planar direction. For example, the thickness of the insulating layer 2 is usually about 1 to 5 μm.

  In this embodiment, since the alignment mark 3 is formed when the insulating layer 2 is patterned and the mold 4 is positioned using the alignment mark 3, the transfer accuracy by the mold 4 can be improved. The uneven surface shape 2a can be formed in a range matched with the planar pattern of the insulating layer 2. Here, the positioning of the mold 4 may be performed on the basis of the planar pattern itself of the insulating layer 2 instead of using the alignment mark 3. In this case, as a matter of course, it is not necessary to form the alignment mark 3. At this time, it is desirable to use the outer edge portion of the insulating layer 2 arranged on the outermost side as a reference among the plurality of insulating layers 2 formed on the mother substrate 1. For example, as shown in FIG. 1A-1, the mold 4 is positioned with reference to the corner 2x closest to the corner of the mother substrate 1 in the insulating layer 2 closest to the corner of the rectangular mother substrate 1. Is desirable to enable easy positioning.

  When there is a structural pattern that serves as a reference for positioning the mold 4 within the formation range of the insulating layer 2 as in the corner 2x, the structural pattern is provided by providing an opening (through hole) in the mold 4 Can be configured to deviate from the planar occupation range of the mold 4. If the structure pattern cannot be formed in a region outside the planar occupation range of the mold 4, it is preferable that the mold 4 is at least partially composed of a transparent material or the like.

  In the illustrated example, the mold 4 is configured so that the concavo-convex shape can be transferred at once to all the insulating layers 2 on the mother substrate 1, but for all the insulating layers 2 on the mother substrate 1, The mold corresponding to one or a plurality of insulating layers 2 may be repeatedly transferred a plurality of times. Further, instead of a flat plate mold as shown in the figure, a disk having a disk shape or a columnar shape and having a plurality of mold surfaces on its outer peripheral surface is used, while rotating the mold around the axis. It may be configured such that the concavo-convex shape is transferred to different insulating layers 2 sequentially by different mold surfaces.

  In the present embodiment, a reflective layer made of a metal film or the like is formed on the insulating layer 2 having the surface to which the uneven shape is transferred as described above. This reflective layer is provided with a scattering reflective surface reflecting the surface irregularity shape of the insulating layer 2. Here, it is preferable to use a structural pattern such as the alignment mark 3 or the corner 2b when patterning the reflective layer. Thereby, the reflective layer can be formed with high precision alignment with the insulating layer 2. In addition, the process after the reflective layer formation process performed on a board | substrate is explained in full detail behind.

  Thereafter, when all the surface structures to be formed on the mother substrate 1 (for example, transparent electrodes and alignment films described later) are formed, the mother substrate 1 includes a counter substrate configured separately as described later. Affixed via a sealing material (not shown). At this time, the counter substrate may be a mother substrate configured to correspond to a plurality of devices in the same manner as the mother substrate 1, or may be an individual counter substrate corresponding to each device. Also good. In any case, after that, liquid crystal is injected between the substrates, and finally the mother substrate 1 is divided for each device-scheduled region where the insulating layer 2 is formed to form individual liquid crystal display devices.

  In the present embodiment, since the surface uneven shape transferred to the insulating layer 2 can be positioned with high accuracy, scattering due to a part of the non-display area of the liquid crystal display device due to the displacement of the surface uneven shape. By forming the reflective surface, it is possible to prevent a part of the non-display area from appearing white. On the other hand, by forming a flat reflective surface in a part of the display area, it is possible to prevent a reduction in luminance of a part of the display area.

  Moreover, since the uneven | corrugated shaped transcription | transfer by the type | mold 4 is performed after patterning the insulating layer 2, the patterning of the insulating layer 2 becomes easy and it becomes unnecessary to complicate a manufacturing process. Therefore, as described later, since it is easy to form an opening used as a contact hole in the insulating layer 2 or to form an opening corresponding to the transmission region, a relatively complicated substrate including active elements. Even in an electro-optical device (liquid crystal display device) having a structure, the manufacturing process can be simplified and the manufacturing cost can be reduced.

[Second Embodiment]
Next, the outline of the second embodiment according to the present invention will be described with reference to FIG. FIG. 2 is a schematic process explanatory diagram showing an outline of the manufacturing process of the second embodiment.

  In this embodiment, as shown in the plan view of FIG. 2A-1 and the side view of FIG. 2A-2, active elements (such as TFTs and TFDs described later) are formed on the same mother glass 1 as in the first embodiment. ) And wiring are formed (element forming step). The element structure 6 is formed by a plurality of processes according to the structure of active elements, wirings, interlayer insulating films, and the like. In the step of forming any component in the process of forming the element structure 6, the alignment mark 7 is simultaneously formed of the same material together with the component.

  Next, as shown in the plan view of FIG. 2B-1 and the side view of FIG. 2B-2, the patterned insulating layer 2 is formed on the element structure 6 (insulating layer forming step). The insulating layer 2 is the same as that described in the first embodiment. In this step, it is preferable to form an opening serving as a contact hole so as to expose the conductive connection portion of the element structure 6 in the patterning of the insulating layer 2.

  The patterning of the insulating layer 2 is preferably performed with the alignment mark 7 as a reference. At this time, instead of using the alignment mark 7 in the element forming step, the insulating layer 2 may be patterned using at least a part 6x of the element structure 6 as a reference. In this case, it is not necessary to form the alignment mark 7.

  Next, similarly to the first embodiment, the concavo-convex shape is transferred to the surface of the insulating layer 2 using the mold 4 (concavo-convex transfer step). In this step, the mold 4 is positioned with reference to the alignment mark 7 and the part 6x of the element structure 6. Thereby, the surface irregularities transferred to the surface of the insulating layer 2 can be aligned with the formation pattern of the element structure 6 and the insulating layer 2 with high accuracy. Here, the points such as the mold surface 4a and the cutout 4b of the mold 4 are the same as in the first embodiment.

  Thereafter, as in the first embodiment, a reflective layer is formed on the surface irregularities of the insulating layer 2. The reflective layer is also preferably formed on the basis of the alignment mark 7 or a part 6x of the element structure 6. In addition to the reflective layer, a transparent electrode or the like may be formed on the insulating layer 2. At this time, a part of the reflective layer or the transparent electrode is conductively connected to the conductive connection portion of the active element through the opening formed in the insulating layer 2. This point will be described in detail later. Further, the subsequent steps are the same as those in the first embodiment, and thus the description thereof is omitted.

  In the present embodiment, another structural pattern (element structure 6 or alignment mark 7) is formed in advance under the insulating layer 2, so that the insulating layer 2 and the mold 4 are positioned based on this structural pattern. . As a result, similar to the first embodiment, the surface irregularities transferred onto the surface of the insulating layer 2 can be configured to match the element structure 6 and the planar pattern of the insulating layer 2 with high accuracy. Note that the structural pattern serving as a positioning reference in the present embodiment is not limited to the element structure 6 and the alignment mark 7, and other structural patterns formed in advance on the substrate (for example, a position reference when forming the element structure 6). Or an alignment mark).

  In the first embodiment and the second embodiment described above, the mother substrate 1 is used to perform processing in parallel on the device planned area that should be a part of a plurality of liquid crystal display devices. The above process may be performed on a substrate corresponding to a single liquid crystal display device, instead of proceeding with such a multi-cavity substrate.

  Next, a specific structure of the liquid crystal display device formed according to each of the above embodiments and a plurality of examples showing a specific method of manufacturing a liquid crystal display device to which each of the above embodiments can be applied will be described. Each of these examples can be applied to any of the above-described embodiments. Each example described below is not a description using a mother substrate (multi-piece substrate) as in the above embodiment, but processing is performed on a substrate constituting a single liquid crystal display device. Although described as a premise, it is obvious that the same structure and method can be applied to each of the above embodiments.

[First embodiment]
FIG. 3 is an enlarged partial longitudinal sectional view showing a schematic configuration of the panel structure in the first embodiment of the electro-optical device according to the invention. This embodiment is a transflective liquid crystal display device 100 in which a liquid crystal 130 as an electro-optical material is disposed between an element substrate 110 and a counter substrate 120. The element substrate 110 and the counter substrate 120 are bonded and fixed in a state having a gap through a sealing material (not shown). Polarizing plates 101 and 102 are disposed on the outer surfaces of the element substrate 110 and the counter substrate 120 so that the polarization transmission axes have a predetermined positional relationship with each other.

  The element substrate 110 is insulated from a TFT (Thin Film Transistor) 112 formed as an active element on the surface of a substrate 111 made of glass, plastic, or the like, and an insulating layer 113 formed on the substrate 111 and the TFT 112. A reflective layer 114 formed on the layer 113 and a transparent electrode 115 formed on the reflective layer 114 are provided. In addition, an alignment film 116 made of an oblique vapor deposition film, a polyimide resin, or the like is formed on the transparent electrode 115.

The TFT 112 is composed of a gate 112a conductively connected to the scanning line, an insulating thin film 112b formed of SiO ₂ or the like on the gate 112a, and amorphous silicon disposed opposite to the gate 112a via the insulating thin film 112b. A semiconductor layer 112c, a data line and a source electrode 112d conductively connected to the semiconductor layer 112c, and a drain electrode 112e conductively connected to the semiconductor layer 112c.

  The insulating layer 113 formed on the TFT 112 can be made of a resin material such as acrylic resin or silicon resin, or an inorganic material such as silicon oxide, silicon nitride, or silicate glass. The insulating layer 113 has an opening 113a. The drain electrode 112e is conductively connected to the reflective layer 114 and the transparent electrode 115 through the opening 113a.

  The surface of the insulating layer 113 has a fine uneven shape. The uneven surface shape of the insulating layer 113 is transferred by a predetermined mold as will be described later. By transferring the concavo-convex shape with the mold in this way, the inclination angle distribution, curved surface, concavo-convex depth, etc. of the surface concavo-convex shape can be obtained accurately and with good reproducibility.

  The reflective layer 114 is made of a metal thin film such as Al, Al alloy, Ag, or Ag alloy. The reflective layer 114 is formed on the surface uneven shape of the insulating layer 113, and thereby has a scattering reflective surface reflecting the surface uneven shape. The reflective layer 114 is conductively connected to the drain electrode 112e which is a conductive connection portion of the TFT 112 through the opening 113a of the insulating layer 113. In the case of the illustrated example, a reflection region R and a transmission region T are provided in a pixel G whose optical state can be controlled independently. In this case, the reflective layer 114 is formed in the reflective region R and not formed in the transmissive region T.

  The transparent electrode 115 is made of a transparent conductor such as ITO (indium tin oxide) or tin oxide. The transparent electrode 115 is formed on the insulating layer 113 and the reflective layer 114. In the illustrated example, the transparent electrode 115 is formed in the entire region of the pixel G. The transparent electrode 115 is indirectly conductively connected to the conductive connection portion (drain electrode 112e) of the TFT 112 by being conductively connected to the reflective layer 114.

  On the other hand, the counter substrate 120 includes a substrate 121 made of glass, plastic, or the like, a color filter 122 formed on the inner surface of the substrate 121, a light shielding portion 123 formed in an inter-pixel region, a color filter 122, and A protective film 124 formed on the light shielding portion 123 and a transparent electrode 125 formed on the protective film 124 are provided. The coloring filter 122, the light shielding portion 123, and the protective film 124 constitute a color filter. An alignment film 126 made of an obliquely deposited film or a polyimide resin is formed on the transparent electrode 125.

  FIG. 4A is an enlarged partial plan view showing an example of the planar structure of the present embodiment. In this embodiment, the surface irregularity shape of the insulating layer 113 and the scattering reflective surface of the reflective layer 114 are the element formation region S in which the TFT 112 is formed (indicated by an arrow in FIG. 3 and a hatched pattern in FIG. 4A). And the surface area other than the element formation region S are different. That is, in the element formation region S, the surface of the insulating layer 113 and the reflective layer 114 is formed in a convex shape so that it slightly rises from the surroundings. Further, in the element formation region S, a fine uneven shape is hardly formed unlike the other surface regions. In addition, the element forming region S may also have a concavo-convex shape. In this case, the concavo-convex shape of the element forming region S is lower than the fine concavo-convex shape formed in the other surface region. It is formed to be higher in position. This is a result of configuring the mold surface so that the transfer pressure applied to the element formation region S is lower than the surrounding surface region, as will be described later, when the uneven shape is transferred to the surface of the insulating layer 113 by the mold. is there. Thereby, damage and destruction of the TFT 112 can be prevented. The surface aspect of the element formation region S is formed only at least in a portion where the switching operation of the TFT 112 is performed, for example, a channel region of the semiconductor layer 112c (a portion where the semiconductor layer 112c and the gate 112a overlap in a plane). It doesn't matter. In this way, the influence of the transfer pressure can be suppressed to the extent that it does not affect at least the switching operation of the TFT 112.

  On the element substrate 120 of the present embodiment, as shown in FIG. 4, scanning lines 117 and data lines 118 connected to the TFTs 112 are formed. In this case, the electric field application structure includes not only the element formation region S shown in FIG. 4A but also a wiring formation region in which the scanning lines 117 and the data lines 118 are formed as shown in FIG. 4B. The region S ′ can also have a surface aspect similar to that of the element formation region S described above. In this case, it is possible to prevent wiring defects (disconnection, increase in wiring resistance, etc.) due to the transfer pressure.

Next, a method for manufacturing the liquid crystal display device 100 will be described with reference to FIGS. 5 and 6 are schematic process cross-sectional views showing the manufacturing process of the element substrate 110 of the liquid crystal display device 100. FIG. First, as shown in FIG. 5A, the TFT 112 is formed on the inner surface of the substrate 111 (element forming step). Here, an insulating film for improving adhesion between the substrate 111 and the TFT 112 may be formed. For example, the TFT 112 is formed as follows. First, a gate 112a is formed with a scanning line (not shown), an insulating thin film 112 is formed thereon with SiO ₂ or the like, and then a semiconductor layer 112c is formed with amorphous silicon or the like. Finally, a source electrode with a data line (not shown) is formed. 112d and drain electrode 112e are formed. In each of the above steps, a vapor deposition method, a sputtering method, a CVD method, or the like is used as a film forming unit, and patterning is appropriately performed by a photolithography method after film formation.

Next, as shown in FIG. 5B, an uncured photosensitive resin 113A made of an acrylic resin or the like is applied on the substrate 111 and the TFT 112 by a spin coating method, a roll coating method, or the like. This photosensitive resin 113A is dried by reduced pressure drying or the like as necessary, and further pre-baked at about 60 to 100 ° C. for about 30 minutes as necessary. Thereafter, an exposure process of, for example, about 150 mJ / cm ² is performed using a predetermined mask using a light source that matches the photosensitive characteristics of the photosensitive resin. Then, by performing development with an inorganic alkaline solution or the like, an insulating layer 113B having an opening 113a is formed as shown in FIG. 5C (insulating layer forming step).

  Here, in the step of forming the opening 113a in the insulating layer 113 in the insulating layer forming step, it is preferable to simultaneously remove the insulating layer 113 arranged outside the display area. In this way, when the element substrate 110 and the counter substrate 120 are bonded together via the sealing material, it is possible to increase the mechanical strength of the sealing portion (adhesion between the sealing material and the substrate) without increasing the number of steps. become.

  Next, the mold 10 shown in FIG. 5D is pressed against the insulating layer 113B (unevenness transfer step). The mold 10 includes a mold surface 12a having a fine uneven surface. Specifically, the mold 10 includes a mold material 12 having the above-described mold surface 12 a provided with a predetermined surface uneven shape on the base 11. The mold material 12 is formed by, for example, transferring a surface uneven shape from a master having a surface substantially corresponding to the finally obtained scattering reflecting surface. The mold member 12 can be made of synthetic resin, metal, or the like.

  On the mold surface 12a, a protrusion P is formed at a position corresponding to the opening 113a of the insulating layer 113B. The protrusion P is for supporting the opening 113a so as not to be crushed during the transfer using the mold 10. That is, as shown in FIG. 6A, when the mold 10 is pressed against the insulating layer 113B, the protrusion P is inserted into the opening 113a, so that the protrusion P supports the inner surface of the opening 113a from the inside. It becomes a state. Therefore, when the mold 10 is pressed against the insulating layer 113B, the insulating layer 113B receives the transfer pressure, so that it is possible to prevent the opening 113a from being crushed or the opening range of the insulating layer 113 by the opening 113a from being reduced.

  Here, the protrusion amount (height) of the protrusion P is configured to be smaller than the depth of the opening 113a during transfer. That is, the protrusion P is configured so that the tip of the protrusion P does not come into contact with the conductive connection portion (drain electrode 112e) of the active element (TFT 112) exposed by the opening 113a. Therefore, it is possible to prevent the conductive connection portion of the active element from being damaged by the protrusion P in the uneven transfer process.

  Returning to FIG. 5D again, the mold surface 12a has an uneven surface portion X having a fine uneven shape corresponding to the surface shape of the scattering reflective surface to be formed on the reflective layer 114, and the uneven surface. An avoidance surface portion Y that is slightly recessed from the surface portion X is provided. And the uneven | corrugated surface part X has arranged the fine uneven | corrugated shape at random two-dimensionally, for example. And the surface aspect of the uneven | corrugated surface part X and the surface aspect of the avoidance surface part Y are different. The avoidance surface portion Y is provided corresponding to the element formation region S or the electric field application structure region S ′ of the above-described embodiment (that is, the position and range coincide with each other at the time of transfer). The avoidance surface portion Y may be configured as a concave shape as a whole, and although it has a fine uneven shape, the height of the top of the uneven shape or the average height of the uneven shape is the peak of the surrounding uneven shape It may be configured to be lower than the average height or the average height of the concavo-convex shape.

  When the projection P is formed, the avoidance surface portion Y is configured as described above in portions other than the projection P. This is because, even when the protrusion P is disposed in the avoidance surface portion Y, the protrusion P is provided at a position corresponding to the opening 113a of the insulating layer 113, so that the transfer pressure is applied to the insulating layer 113 by the protrusion P. Because there is no addition.

  In the concavo-convex transfer step shown in FIG. 6A, the avoidance surface portion Y is lower than the surrounding concavo-convex surface portion X, so that the transfer pressure applied to the element forming region S corresponding to the avoidance surface portion Y is This is lower than the transfer pressure applied to the area. For this reason, since the pressure applied to the active element (TFT 112) is reduced, it is possible to suppress the occurrence of damage and other defects of the active element. Further, when the avoidance surface portion Y is provided so as to correspond to the electric field application structure region S ′, it is possible to reduce the occurrence of defects in not only active elements but also wiring (scanning lines and data lines). it can.

  Next, the mold 10 is separated from the insulating layer 113B. In order to improve the releasability at this time, a coating layer may be formed in advance on the mold surface 12a of the mold 10, and an appropriate separation may be provided between the mold surface 12a and the insulating layer 113B. You may implement said uneven | corrugated transfer process by interposing a mold agent. When the mold 10 is pulled apart in this way, the surface shape of the mold surface 12a is transferred as described above, and an uneven shape is formed on the surface of the insulating layer. Thereafter, if necessary, the insulating layer 113B is fired (post-baked), and finally the insulating layer 113 having a desired hardness is formed as shown in FIG. 6B. In this baking step, for example, a heat treatment at 200 to 250 ° C. for about 30 minutes (preferably a treatment at a higher temperature than the pre-bake) is performed.

  Next, a reflective layer 114 is formed on the insulating layer 113 as shown in FIG. The reflective layer 114 is formed by a film formation method such as an evaporation method or a sputtering method. In the present embodiment, the reflective layer 114 is configured to have a pattern separated for each pixel G. More specifically, the reflective layer 114 is formed only in the reflective region R in the pixel G and is not formed in the transmissive region T. Such a pattern of the reflective layer 114 is formed by performing an appropriate etching process (for example, wet etching).

  Next, as illustrated in FIG. 6C, a transparent electrode 115 made of a transparent conductor such as ITO is formed on the insulating layer 113 and the reflective layer 114. The transparent electrode 115 can be formed by sputtering. The transparent electrode 115 is formed in a pattern separated from each other for each pixel G. The transparent electrode 115 is formed on almost the entire surface of the pixel G (that is, both in the reflection region R and the transmission region T).

  Note that another metal film may be interposed between the reflective layer 114 and the transparent electrode 115. Further, the transparent electrode 115 does not need to be formed on the entire surface of the reflective layer 114, and may be conductively connected to the reflective layer 114 to such an extent that does not hinder driving of the electro-optic material (liquid crystal 130).

[Second Embodiment]
FIG. 7 is a schematic configuration sectional view (a) showing a schematic structure of the liquid crystal display device 200 of the second embodiment and a schematic plan view (b) showing a planar structure of the element substrate 210. The second embodiment has a TFT 212 having a different structure instead of the TFT 112 which is an active element of the first embodiment. In the liquid crystal display device 200, the element substrate 210 includes a substrate 211, an insulating layer 213, a reflective layer 214, a transparent electrode 215, and an alignment film 216 similar to those in the first embodiment. Further, the counter substrate 220 includes the same substrate 221, the transparent electrode 223, and the alignment film 224 as those in the first embodiment. Further, polarizing plates 201 and 202 similar to those of the first embodiment are disposed on the outer surfaces of the element substrate 210 and the counter substrate 220, respectively.

  Here, a light-shielding film 222 is formed on the inner surface of the substrate 221 so as to cover the formation region of the TFT 212 and the inter-pixel region. The TFT 212 is formed on the insulating film 211X formed on the substrate 211. The insulating film 211X is a base layer for improving adhesion of the TFT 212 to the substrate 211 and preventing diffusion of impurities into the semiconductor layer 212c.

The TFT 212 of the liquid crystal display device 200 includes a gate 212a conductively connected to the scanning line 217, an insulating thin film 212b formed of SiO ₂ or the like below the gate 212a, and a lower layer through the insulating thin film 212b with respect to the gate 212a. A semiconductor layer 212c made of polysilicon or the like having a portion (channel region) arranged opposite to each other, a source electrode 212d conductively connected to the source region of the data line 218 and the semiconductor layer 212c, a reflective layer 214 and a transparent layer The electrode 215 and the drain electrode 212e conductively connected to the drain region of the semiconductor layer 212c are provided.

  Further, in the region adjacent to the TFT 212, a drain region of the semiconductor layer 212c is formed to extend, and a capacitor electrode 212f is provided to face the insulating thin film 121b with respect to the drain region. The capacitor electrode 212f forms a storage capacitor together with the drain region of the semiconductor layer 212c facing the capacitor electrode 212f, and is formed of a part of the capacitor line 219. Note that the interlayer insulating film 212X insulates the scanning line 217, the gate 212a, the capacitor line 219, and the data line 218 in the thickness direction.

  In this liquid crystal display device 200, the surface of the insulating layer 213 has a surface aspect different from other surface regions in the element formation region S, as in the first embodiment described above. Specifically, while the surface of the insulating layer 213 is configured to be flat in the element formation region S, surface irregularities similar to those in the first embodiment are formed in the surface region other than the element formation region S. ing. Therefore, in the element formation region S, the reflective layer 214 has a substantially flat reflective surface, while in the other surface regions, a scattering reflective surface is formed including the range where the storage capacitor is formed. ing. In the present embodiment, as in the first embodiment, the electric field application structure region including not only the element formation region S but also the wiring formation region may be configured flat as described above.

  In order to form the flat surface portion as described above on the insulating layer 213, the mold surface of the mold is configured to be flat, or the mold surface is configured not to contact the surface of the insulating layer 213 in the uneven transfer process. Just do it. In particular, in the latter case, since the transfer pressure is hardly applied to the active elements and wirings, defects in the active elements and wirings can be further reduced.

  In the present embodiment, since the region (element formation region S) in which the reflection surface of the reflection layer 214 is flat is shielded by the light shielding film 222, its optical characteristics do not cause a display problem. .

[Third embodiment]
Next, a third embodiment according to the present invention will be described with reference to FIGS. The liquid crystal display device according to the third embodiment is different from the first embodiment only in the structure of the element substrate 310, and other configurations are the same as those in the first embodiment. Therefore, only the element substrate 310 will be described below.

  In the element substrate 310 of this embodiment, as shown in FIG. 8A, the TFT 312 is formed on the substrate 311 as in the first embodiment. Here, the structure and the manufacturing method of the TFT 312 are the same as those in the first embodiment, and the description thereof is omitted.

  Next, as shown in FIG. 8B, a photosensitive resin 313B having an opening 313b is formed by the same method as in the first embodiment. Unlike the first embodiment, the photosensitive resin 313B has an opening 313b that is not a mere contact hole but is formed corresponding to the transmission region. That is, the opening 313b is formed not only on the contact hole portion configured to expose the conductive connection portion (the drain electrode 312e shown in the figure) of the TFT 312 but also on almost the entire transmission region. In the opening 313b in the illustrated example, the contact hole portion and the portion provided in the transmission region are configured to be integrated.

  Next, as shown in FIG. 8C, a fine uneven shape is transferred onto the surface of the insulating layer 313 </ b> B using a mold 30 by the same method as in the first embodiment. In this unevenness transfer step, the points other than the differences shown below, such as the point that the die 30 is composed of the base material 32 and the die surface 32a, are the same as those in the first embodiment, and the description thereof is omitted. To do.

  In the mold 30 of this embodiment, since the opening 313b is also formed in the transmission region, the protrusion P projects over a wide range in accordance with the formation range. The protrusion P may have a shape corresponding to the entire opening 313b as in the illustrated example, but may be configured in a closed curve (outer ring mountain shape) along the opening edge of the opening 313b, for example. Similar to the first embodiment, the protrusion P is configured not to contact the conductive connection portion of the active element during the transfer by the mold 30.

  The mold surface 32a of the mold 30 is the same as that of the first embodiment in that an avoidance surface portion Y is formed in a portion corresponding to the element formation region S. The avoidance surface portion Y is formed in a concave shape in a portion other than the portion corresponding to the range in which the opening 313 is provided in the element formation region S (that is, the portion where the projection portion P is formed). The transfer pressure that is sometimes received by the active element (TFT 312) is reduced. The insulating layer 313B to which the concavo-convex shape is transferred in this manner is baked in the same manner as in the first embodiment to form the insulating layer 313.

  Next, as shown in FIG. 9A, a transparent electrode 314 similar to that of the first embodiment is formed on the surface of the insulating layer 313. This transparent electrode is formed not only on the surface of the insulating layer 313 but also on the inner bottom portion of the opening 313b (on the surface of the substrate 311 or the insulating thin film).

  Finally, as shown in FIG. 9B, a reflective layer 315 similar to that of the first embodiment is formed on the surface of a portion of the transparent electrode 314 formed on the surface of the insulating layer 313. The reflective layer 315 is not formed on the inner bottom of the opening 313b. In this way, the region where the reflective layer 315 is formed in the pixel G becomes the reflective region R, and the region where the reflective layer 315 is not formed becomes the transmissive region T.

  In this embodiment, since the insulating layer 313 is not formed in the transmission region T, the insulating layer 313 can be made of a coloring material or a light shielding material. Further, even when the insulating layer 313 that is somewhat transparent is used, it is advantageous in that the light transmittance of the transmission region 313 can be further increased. In this embodiment, a step corresponding to the thickness of the insulating layer 313 is formed between the transmissive region T and the reflective region R, and the thickness of the liquid crystal layer is increased in the transmissive region T by using this step. The reflection region R can be made thin. By adopting such a multi-gap structure, it is possible to achieve a higher level of brightness for transmissive display and reflective display.

  In the above embodiment, the transparent electrode 314 is formed on the entire lower layer of the reflective layer 315. However, since the reflective layer 315 only needs to be conductively connected to the transparent electrode 314, the transparent electrode 314 is formed on the entire lower layer of the reflective layer 315. Need not be formed. Further, similarly to the first embodiment, the reflective layer may be formed on the insulating layer 313 first, and then the transparent electrode may be formed. On the contrary, in the first embodiment, the transparent electrode may be formed first, and then the reflective layer may be formed similarly to the present embodiment. Further, other matters described in the first embodiment, for example, the configuration shown in FIG. 7 can be similarly adopted in the third embodiment.

[Fourth embodiment]
Next, a liquid crystal display device according to a fourth embodiment of the present invention will be described with reference to FIGS. The liquid crystal display device 400 of this embodiment is an electro-optical device having a TFD (Thin Film Diode) as an active element, as shown in FIG. The liquid crystal display device 400 includes a liquid crystal 430 disposed between an element substrate 410 and a counter substrate 420, and includes polarizing plates 401 and 402 similar to those of the above-described embodiments.

  The element substrate 410 includes a substrate 411, a TFD 412 that is an active element, an insulating layer 413, a transparent electrode 414, a reflective layer 415, and an alignment film 416. Here, except for the TFD 412, the material is basically the same as that of the previous embodiment.

  On the other hand, the counter substrate 420 includes a substrate 421, a plurality of transparent electrodes 422 formed in a stripe shape on the substrate 421, a light shielding film 423 formed between the transparent electrodes 422, and an alignment film 424. Has been. This embodiment is different from the previous embodiments in that the transparent electrode 422 is formed in a strip shape extending in a direction orthogonal to the paper surface of FIG.

The TFD 412 has a two-terminal nonlinear element having a MIM (Metal Insulator Metal) structure. The TFD 412 is formed on the base layer 411X formed on the substrate 411. The base layer 411X improves adhesion between the substrate 411 and the TFD 412, and is made of, for example, Ta ₂ O ₅ formed by a method of performing an oxidation process after forming a Ta layer. On the base layer 411X, as shown in FIGS. 10 (x) and 10 (b), a first electrode layer 412a connected to the wiring 417 and the first electrode layer 412a are joined via an insulating thin film 412c. A TFD 412 having the second electrode layer 412b thus formed and a third electrode layer 412d bonded to the second electrode layer 412b through an insulating thin film 412c is formed.

Here, as a more specific manufacturing procedure, for example, the second electrode layer 412b is formed with a metal such as Ta by vapor deposition or sputtering, and the surface is oxidized by anodic oxidation, thereby Ta ₂ O. ₅ is formed. Then, a metal such as Cr is formed on the second electrode layer 412b covered with the insulating thin film 412c by vapor deposition or sputtering to form the first electrode layer 412a and the third electrode layer 412d.

  The TFD 412 is formed by connecting a pair of two-terminal nonlinear elements each having an MIM structure in which dissimilar metals are joined via an insulating thin film 412c in series. As described above, by forming the dissimilar metal joint structure symmetrically, the symmetry regarding the potential polarity in the nonlinear characteristic of the TFD 412 can be obtained as is well known.

  Next, as shown in FIGS. 10 (y) and 10 (c), the photosensitive resin is applied in the same manner as in the previous embodiment, and the opening 413a is formed by pre-baking and exposure / development as necessary. An insulating layer 413 having an opening 413a is formed. Here, in this embodiment, the opening 413a is formed so that the conductive connection portion (third electrode layer 412d) of the active element (TFD 412) is exposed. However, the opening 413a is configured not only to expose the conductive connection portion but also to include a region to be a transmission region. Furthermore, the opening 413a is configured to expose a portion (MIM structure portion) that performs the switching function of the active element (TFD 412). In particular, in this embodiment, the opening 413a is formed so that the portion exposing the conductive connection portion, the transmissive region, and the portion exhibiting the switching function of the active element are all configured integrally.

  Next, as shown in FIG. 11A, a fine uneven shape is transferred onto the surface of the insulating layer 413 using a mold 40. The transfer method in this uneven transfer process is the same as in the previous embodiments. Further, the mold 40 having the mold material 42 having the base 41 and the mold surface 42a is substantially the same as the third embodiment described above. Here, the protrusion P is formed in a portion corresponding to the opening 413a in the mold surface 42a. As a result, when the mold 40 is applied, the protrusion P is in a state of supporting the opening edge of the opening 413a from the inside. In the present embodiment, a recess Q for avoiding an element formation region is provided in a part of the protrusion P. In this way, the protrusion P is configured such that the tip does not contact the active element or the inner bottom surface of the opening 413a during transfer.

  Next, as shown in FIGS. 11 (x) and 11 (b), a transparent electrode 414 similar to the above-described embodiments is formed so as to partially overlap the third electrode layer 412d. Here, the transparent electrode 414 is formed over almost the entire pixel from the inner bottom of the opening 413 a to the surface of the insulating layer 413.

  Further, as shown in FIGS. 11 (y) and 11 (c), a reflective layer 415 is formed on the transparent electrode 414. Here, the reflective layer 415 is formed only on the surface of the insulating layer 413 and is not formed on the inner bottom portion of the opening 413a. That is, a portion where the insulating layer 413 is formed becomes a reflective region where the reflective layer 415 is formed, and a portion where the insulating layer 413 is not formed becomes a transmissive region because the reflective layer 415 is not formed.

  In this embodiment, the opening 413a of the insulating layer 413 is formed so as to expose the portion (MIM structure portion) that performs the switching function of the active element (TFD 412), and thus performs the switching function in the subsequent uneven transfer process. The part is not subjected to transfer pressure. Therefore, damage to the active element can be prevented.

  In the above embodiment, the transparent electrode 414 is formed on the entire lower layer of the reflective layer 415. However, if the reflective layer 415 is conductively connected to the transparent electrode 414, the transparent electrode 414 is formed on the entire lower layer of the reflective layer 415. It does not need to be formed. Further, as in the first embodiment, the reflective layer may be formed on the insulating layer 413 first, and then the transparent electrode may be formed.

  Further, in the element substrate using the TFT as the active element described in the first to third embodiments (including the configuration shown in FIG. 7), the same opening (that is, the element) as in the fourth embodiment is used. An insulating layer having an opening that also exposes the formation region can be employed.

  Note that the method of manufacturing the electro-optical device of the present invention is not limited to the illustrated example described above, and various modifications can be made without departing from the scope of the present invention. For example, in each of the above embodiments, an insulating layer having an opening is formed by a photolithography method using a photosensitive resin, but the present invention is not limited to such an insulating layer, only a resin material. In addition, an insulating layer composed of various insulating materials such as inorganic oxides can be used, and various methods such as an etching method, a laser drilling method, and a screen printing method can be used for providing an opening in the insulating layer. Can be used.

Process plan views (a-1) and (b-1), process side views (a-2) and (b-2), and an enlarged cross-section during concavo-convex shape transfer, showing an outline of the manufacturing method of the first embodiment FIG. Process top view (a-1) and (b-1) and process side view (a-2) and (b-2) which show the outline | summary of the manufacturing method of 2nd Embodiment. FIG. 3 is an enlarged partial cross-sectional view schematically showing an enlarged structure of the liquid crystal display device of the first embodiment. Enlarged partial plan view (a) and (b) showing a part of the first embodiment. Process sectional drawing (a)-(d) which shows the manufacturing process of the element substrate of 1st Example. Process sectional drawing (a)-(c) which shows the manufacturing process of the element substrate of 1st Example. An enlarged partial sectional view (a) and an enlarged partial plan view (b) showing a liquid crystal display device of a second embodiment. Process sectional drawing (a)-(b) which shows the manufacturing process of the element substrate of 3rd Example. Process sectional drawing (a) and (b) which show the manufacturing process of the element substrate of 3rd Example. The schematic block diagram (a) of 4th Example, process sectional drawing (b) and (c) which show the manufacturing process of an element substrate, and process top view (x) and (y). Process sectional drawing (a)-(c) and process top view (x) and (y) which show the manufacturing process of the element substrate of 4th Example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Mother board | substrate, 2 ... Insulating layer, 2a ... Surface uneven | corrugated shape, 3 ... Alignment mark, 4 ... type | mold, 4a ... type | mold surface, 6 ... Element structure, 7 ... Alignment mark, 100 ... Liquid crystal display device, 101, 102 ... Polarizing plate, 110 ... element substrate, 111 ... substrate, 112 ... TFT, 113 ... insulating layer, 113a ... opening, 114 ... reflective layer, 115 ... transparent electrode, 116 ... alignment film, 117 ... scanning line, 118 ... data line, DESCRIPTION OF SYMBOLS 120 ... Opposite board | substrate, 121 ... Board | substrate, 122 ... Colored filter, 123 ... Light-shielding part, 124 ... Protective film, 125 ... Transparent electrode, 126 ... Orientation film, 130 ... Liquid crystal, 10 ... Type | mold, 11 ... Base, 12 ... Mold material, 12a ... Mold surface, X ... Uneven surface portion, Y ... Avoidance surface portion, P ... Projection portion, G ... Pixel, R ... Reflection region, T ... Transmission region, S ... Element formation region, S '... Electric field application structure region

Claims (9)

A method of manufacturing an electro-optical device, wherein a pair of substrates are arranged to face each other via an electro-optical layer, and a reflective layer is provided on one of the pair of substrates,
An insulating layer forming step of forming a patterned insulating layer on the one substrate;
A concavo-convex forming step of forming a concavo-convex shape on the surface of the insulating layer by pressing a mold positioned using the structural pattern formed on the one substrate against the insulating layer;
A reflective layer forming step of forming the reflective layer on the insulating layer so as to obtain a scattering reflective surface reflecting the uneven shape;
A method for manufacturing an electro-optical device.   2. The electro-optical device according to claim 1, wherein the structural pattern is a shape pattern of the insulating layer patterned in the insulating layer forming step or an alignment mark simultaneously patterned with the same material as the insulating layer. Manufacturing method. An element forming step of forming an active element on the one substrate;
2. The method of manufacturing an electro-optical device according to claim 1, wherein the structural pattern is an active element formation pattern or an alignment mark simultaneously patterned with the same material.   4. The structure pattern according to claim 1, wherein the structural pattern is arranged at a position outside a planar occupation range of the mold when the mold is planarly overlapped on the one substrate. A method for manufacturing an electro-optical device according to one item.   The electro-optical device according to claim 4, wherein the mold is provided with a notch or an opening for arranging the structural pattern at a position outside a planar occupation range of the mold. Manufacturing method.   6. The method of manufacturing an electro-optical device according to claim 1, wherein in the reflective layer forming step, the reflective layer is formed by positioning using the structural pattern.   The said insulating layer formation process has the step which arrange | positions the photosensitive resin on said one board | substrate, and the step patterned by exposure and the image development process of the said photosensitive resin, The any one of Claim 1 thru | or 6 characterized by the above-mentioned. A method for manufacturing the electro-optical device according to claim 1. Forming an active element on the one substrate, and forming an electrode conductively connected to the active element;
7. The electro-optical device according to claim 1, wherein in the insulating layer forming step, an opening for conductively connecting the active element and the electrode is provided in the insulating layer. Production method. The insulating layer forming step includes a step of applying a photosensitive resin, a step of exposing the photosensitive resin, and a step of developing the photosensitive resin to form the opening. Item 9. A method for manufacturing the electro-optical device according to Item 8.

Images