JP2005150746A - フリー磁性膜を具備する磁気トンネリング接合セル及びそれを含む磁気ram - Google Patents
フリー磁性膜を具備する磁気トンネリング接合セル及びそれを含む磁気ram Download PDFInfo
- Publication number
- JP2005150746A JP2005150746A JP2004330202A JP2004330202A JP2005150746A JP 2005150746 A JP2005150746 A JP 2005150746A JP 2004330202 A JP2004330202 A JP 2004330202A JP 2004330202 A JP2004330202 A JP 2004330202A JP 2005150746 A JP2005150746 A JP 2005150746A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetic
- mtj cell
- free magnetic
- magnetic film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 145
- 230000005641 tunneling Effects 0.000 title claims abstract description 12
- 229910003321 CoFe Inorganic materials 0.000 claims description 11
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 10
- 238000001914 filtration Methods 0.000 claims description 6
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 5
- 150000003623 transition metal compounds Chemical class 0.000 claims description 5
- -1 rare earth transition metal compound Chemical class 0.000 claims description 4
- 239000011229 interlayer Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 20
- 239000000463 material Substances 0.000 description 11
- 238000007382 vortex spinning Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000005290 antiferromagnetic effect Effects 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- SDVIPADSGIIEHD-UHFFFAOYSA-N cobalt terbium Chemical compound [Co].[Tb] SDVIPADSGIIEHD-UHFFFAOYSA-N 0.000 description 2
- SHMWNGFNWYELHA-UHFFFAOYSA-N iridium manganese Chemical compound [Mn].[Ir] SHMWNGFNWYELHA-UHFFFAOYSA-N 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- GNEMDYVJKXMKCS-UHFFFAOYSA-N cobalt zirconium Chemical compound [Co].[Zr] GNEMDYVJKXMKCS-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- JSUSQWYDLONJAX-UHFFFAOYSA-N iron terbium Chemical compound [Fe].[Tb] JSUSQWYDLONJAX-UHFFFAOYSA-N 0.000 description 1
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/13—Amorphous metallic alloys, e.g. glassy metals
- H01F10/133—Amorphous metallic alloys, e.g. glassy metals containing rare earth metals
- H01F10/135—Amorphous metallic alloys, e.g. glassy metals containing rare earth metals containing transition metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Abstract
【解決手段】 下部電極及び下部電極上に順次に積層された下部磁性膜、トンネリング膜、上部磁性膜及び上部電極を含み、上部磁性膜は厚さが5nm以下のフリー磁性膜を含むことを特徴とするMTJセル。ここで、MTJセルの縦横比は2以下であり、フリー磁性膜の磁気モーメントは800×103A/m(800emu/cm3)以下である。
【選択図】 図6
Description
MRAMからデータを正確に再生するためにMRAMのセンシングマージンはできるだけ大きいことが望ましい。前記センシングマージンは大体MTJセルのMR比により決定される。
MTJセルのMR比を大きくするためにはMTJセルの安定性及び均一性が確保される必要がある。このようにするためには、MTJセルのトンネリング酸化膜の厚さが均一でなければならないので、その製造工程上の安定性がまず確立される必要がある。
図3は、従来のMTJセルのデータ記録過程及びデータ再生過程でフリー磁性膜に現れるボルテックスピンニングを示す。そして図4は、このようなボルテックスピンニングによる磁気履歴特性の変化を示す。
図5は、従来のMRAMに対する前記データ記録過程で、フリー磁性膜が10Å(1nm)のコバルト鉄(CoFe)と30Å(3nm)のニッケル鉄(NiFe)とよりなる(CoFe/NiFe)MTJセルのスイッチング分布を示す。図5で参照符号C1、C2、C3及びC4は、正常なスイッチングフィールドでスイッチングされていないMTJセル(フェールビット)の比率を表す。
前記MTJセルの縦横比(Aspect Ratio:以下、AR)は2以下である。
前記フリー磁性膜は磁気モーメントが400emu/cm3(400×103A/m)より小さな非晶質希土類遷移金属化合物膜、磁気モーメントが600emu/cm3(600×103A/m)より小さな非晶質遷移金属化合物膜及びFeTb膜のうちいずれか一つである。
前記フリー磁性膜は前記トンネリング膜との間に、前記フリー磁性膜より磁気モーメントの大きいフィルタリング膜をさらに具備する。
前記下部磁性膜は順次に積層されたピンニング膜及びSAF(Synthetic Anti Ferromagnetic)膜を含む。
前記フリー磁性膜に関する特徴は前記MTJセルと関連して記述した通りである。
具体的には、図7に示すように、フリー磁性膜20は順次に積層された第1及び第2磁性膜20a、20bを含む。第1磁性膜20aはフリー磁性膜20のMR比を増加させるためのフィルタリング膜であって、分極率の大きい強磁性膜、例えばコバルト鉄膜である。第2磁性膜20bは、前記磁気モーメントが800emu/cm3(800×103A/m)以下の非晶質物質膜である。フリー磁性膜20が第1及び第2磁性膜20a、20bで構成された場合にも全体厚さは5nm以下であることが望ましい。
図9は、5Å(0.5nm)のCoFe膜及び30Å(3nm)のNiFe膜で構成されたフリー磁性膜を含む本発明のMTJセルよりなるアレイでのフェールビットの発生程度を示す。
このような傾向は、MTJセルのARが1.5である時、キンクが発生しない領域とそうでない領域とを示す図13の場合にもそのまま当てはまる。
図14を参照すると、フリー磁性膜の厚さが5nmより大きい場合、MTJセルではキンクが発生する可能性があるということが分かる。
12 シード膜
14 ピンニング膜
16 ピンド膜
18 トンネリング膜
20 フリー磁性膜
22 キャッピング膜
Claims (15)
- 下部電極及び前記下部電極上に順次に積層された下部磁性膜、トンネリング膜、上部磁性膜及び上部電極を含むMTJセルにおいて、
前記上部磁性膜は厚さが5nm以下のフリー磁性膜を含むことを特徴とするMTJセル。 - 前記フリー磁性膜は磁気モーメントが800×103A/m以下の磁性膜を備えることを特徴とする請求項1に記載のMTJセル。
- 前記MTJセルの縦横比は2以下であることを特徴とする請求項1または2に記載のMTJセル。
- 前記フリー磁性膜は磁気モーメントが400×103A/mより小さな非晶質希土類遷移金属化合物膜、磁気モーメントが600×103A/mより小さな非晶質遷移金属化合物膜及びFeTb膜のうちいずれか一つであることを特徴とする請求項2に記載のMTJセル。
- 前記フリー磁性膜は順次に積層されたCoFe膜及びNiFe膜を含むことを特徴とする請求項1に記載のMTJセル。
- 前記フリー磁性膜は前記トンネリング膜との間に、前記磁性膜より磁気モーメントの大きいフィルタリング膜をさらに具備することを特徴とする請求項2に記載のMTJセル。
- 前記フィルタリング膜はCoFe膜であることを特徴とする請求項6に記載のMTJセル。
- 前記下部磁性膜は順次に積層されたピンニング膜及びSAF膜を含むことを特徴とする請求項1に記載のMTJセル。
- トランジスタと、前記トランジスタに連結されたMTJセルと、前記トランジスタ及び前記MTJセルを取り囲む層間絶縁膜と、を含む磁気RAMにおいて、
前記MTJセルの縦横比は2以下であることを特徴とする磁気RAM。 - 前記MTJセルは厚さが5nm以下のフリー磁性膜を含むことを特徴とする請求項9に記載の磁気RAM。
- 前記フリー磁性膜は磁気モーメントが800×103A/m以下の磁性膜を備えることを特徴とする請求項10に記載の磁気RAM。
- 前記フリー磁性膜は磁気モーメントが400×103A/mより小さな非晶質希土類遷移金属化合物膜、磁気モーメントが600×103A/mより小さな非晶質遷移金属化合物膜及びFeTb膜のうちいずれか一つであることを特徴とする請求項11に記載の磁気RAM。
- 前記フリー磁性膜は順次に積層されたCoFe膜及びNiFe膜を含むことを特徴とする請求項10に記載の磁気RAM。
- 前記フリー磁性膜は前記磁性膜より磁気モーメントの大きいフィルタリング膜をさらに含むことを特徴とする請求項11に記載の磁気RAM。
- 前記フィルタリング膜はCoFe膜であることを特徴とする請求項14に記載の磁気RAM。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2003-080573 | 2003-11-14 | ||
KR1020030080573A KR100988086B1 (ko) | 2003-11-14 | 2003-11-14 | 자기 모멘트가 낮은 프리 자성막을 구비하는 자기터널접합셀 및 이를 포함하는 자기램 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005150746A true JP2005150746A (ja) | 2005-06-09 |
JP5294531B2 JP5294531B2 (ja) | 2013-09-18 |
Family
ID=34431769
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004330202A Active JP5294531B2 (ja) | 2003-11-14 | 2004-11-15 | フリー磁性膜を具備する磁気トンネリング接合セル及びそれを含む磁気ram |
Country Status (6)
Country | Link |
---|---|
US (1) | US7378716B2 (ja) |
EP (1) | EP1531481B1 (ja) |
JP (1) | JP5294531B2 (ja) |
KR (1) | KR100988086B1 (ja) |
CN (1) | CN100541652C (ja) |
DE (1) | DE602004030652D1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100612854B1 (ko) * | 2004-07-31 | 2006-08-21 | 삼성전자주식회사 | 스핀차지를 이용한 자성막 구조체와 그 제조 방법과 그를구비하는 반도체 장치 및 이 장치의 동작방법 |
WO2007013887A2 (en) * | 2004-10-15 | 2007-02-01 | The Trustees Of Columbia University In The City Of New York | Methods of manipulating the relaxation rate in magnetic materials and devices for using the same |
US8027206B2 (en) * | 2009-01-30 | 2011-09-27 | Qualcomm Incorporated | Bit line voltage control in spin transfer torque magnetoresistive random access memory |
US9368716B2 (en) * | 2009-02-02 | 2016-06-14 | Qualcomm Incorporated | Magnetic tunnel junction (MTJ) storage element and spin transfer torque magnetoresistive random access memory (STT-MRAM) cells having an MTJ |
US7999337B2 (en) * | 2009-07-13 | 2011-08-16 | Seagate Technology Llc | Static magnetic field assisted resistive sense element |
US8203870B2 (en) * | 2010-11-23 | 2012-06-19 | Seagate Technology Llc | Flux programmed multi-bit magnetic memory |
US20120267733A1 (en) * | 2011-04-25 | 2012-10-25 | International Business Machines Corporation | Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory |
EP2575136B1 (en) * | 2011-09-30 | 2014-12-24 | Crocus Technology S.A. | Self-reference magnetic random access memory (MRAM) cell comprising ferromagnetic layers |
US9508924B2 (en) | 2014-07-03 | 2016-11-29 | Samsung Electronics Co., Ltd. | Method and system for providing rare earth magnetic junctions usable in spin transfer torque magnetic random access memory applications |
WO2016048378A1 (en) * | 2014-09-26 | 2016-03-31 | Intel Corporation | Magnetic diffusion barriers and filter in psttm mtj construction |
US9960346B2 (en) * | 2015-05-07 | 2018-05-01 | Micron Technology, Inc. | Magnetic tunnel junctions |
US10833253B2 (en) | 2016-02-05 | 2020-11-10 | International Business Machines Corporation | Low magnetic moment materials for spin transfer torque magnetoresistive random access memory devices |
US9893273B2 (en) | 2016-04-08 | 2018-02-13 | International Business Machines Corporation | Light element doped low magnetic moment material spin torque transfer MRAM |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003188439A (ja) * | 2001-12-21 | 2003-07-04 | Sony Corp | 磁気抵抗効果素子およびその製造方法並びに磁気メモリ装置 |
JP2003198003A (ja) * | 2001-12-27 | 2003-07-11 | Sony Corp | 磁気抵抗効果素子およびその製造方法並びに磁気メモリ装置 |
JP2003197875A (ja) * | 2001-12-28 | 2003-07-11 | Toshiba Corp | 磁気記憶装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6233172B1 (en) * | 1999-12-17 | 2001-05-15 | Motorola, Inc. | Magnetic element with dual magnetic states and fabrication method thereof |
EP1187103A3 (en) * | 2000-08-04 | 2003-01-08 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistance effect device, head, and memory element |
JP2002176150A (ja) * | 2000-09-27 | 2002-06-21 | Canon Inc | 磁気抵抗効果を用いた不揮発固体メモリ素子およびメモリとその記録再生方法 |
TWI222630B (en) * | 2001-04-24 | 2004-10-21 | Matsushita Electric Ind Co Ltd | Magnetoresistive element and magnetoresistive memory device using the same |
US6721201B2 (en) * | 2001-08-30 | 2004-04-13 | Canon Kabushiki Kaisha | Magnetoresistive film and memory using the same |
DE10146546A1 (de) | 2001-09-21 | 2003-04-10 | Infineon Technologies Ag | Digitale magnetische Speicherzelleneinrichtung |
US6743340B2 (en) * | 2002-02-05 | 2004-06-01 | Applied Materials, Inc. | Sputtering of aligned magnetic materials and magnetic dipole ring used therefor |
KR20030089078A (ko) * | 2002-05-16 | 2003-11-21 | 주식회사 하이닉스반도체 | 자기터널접합소자를 갖는 자기메모리셀 |
KR100468861B1 (ko) * | 2003-01-07 | 2005-01-29 | 삼성전자주식회사 | 고선택성을 가지는 자기저항 메모리 |
KR20040105187A (ko) * | 2003-06-05 | 2004-12-14 | 학교법인고려중앙학원 | 비정질 코발트-나이오븀-지르코늄 합금과 나노산화층을사용한 자기터널접합 |
US7151652B2 (en) * | 2003-06-18 | 2006-12-19 | Hewett-Packard Development Company, L.P. | Top-pinned magnetoresistive device having adjusted interface property |
-
2003
- 2003-11-14 KR KR1020030080573A patent/KR100988086B1/ko active IP Right Grant
-
2004
- 2004-11-11 EP EP04257001A patent/EP1531481B1/en active Active
- 2004-11-11 DE DE602004030652T patent/DE602004030652D1/de active Active
- 2004-11-15 CN CNB2004100959895A patent/CN100541652C/zh active Active
- 2004-11-15 JP JP2004330202A patent/JP5294531B2/ja active Active
- 2004-11-15 US US10/987,185 patent/US7378716B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003188439A (ja) * | 2001-12-21 | 2003-07-04 | Sony Corp | 磁気抵抗効果素子およびその製造方法並びに磁気メモリ装置 |
JP2003198003A (ja) * | 2001-12-27 | 2003-07-11 | Sony Corp | 磁気抵抗効果素子およびその製造方法並びに磁気メモリ装置 |
JP2003197875A (ja) * | 2001-12-28 | 2003-07-11 | Toshiba Corp | 磁気記憶装置 |
Also Published As
Publication number | Publication date |
---|---|
CN100541652C (zh) | 2009-09-16 |
US20050174834A1 (en) | 2005-08-11 |
CN1617258A (zh) | 2005-05-18 |
US7378716B2 (en) | 2008-05-27 |
KR20050046948A (ko) | 2005-05-19 |
EP1531481A3 (en) | 2005-10-19 |
JP5294531B2 (ja) | 2013-09-18 |
EP1531481B1 (en) | 2010-12-22 |
KR100988086B1 (ko) | 2010-10-18 |
EP1531481A2 (en) | 2005-05-18 |
DE602004030652D1 (de) | 2011-02-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6990014B2 (en) | Magnetoresistive element and magnetic memory unit | |
US7149105B2 (en) | Magnetic tunnel junctions for MRAM devices | |
US7755933B2 (en) | Spin transfer MRAM device with separated CCP assisted writing | |
US20130005052A1 (en) | Magnetic tunnel junction with iron dusting layer between free layer and tunnel barrier | |
US8264023B2 (en) | Semiconductor device and manufacturing method of semiconductor device | |
JP2010103224A (ja) | 磁気抵抗素子、及び磁気メモリ | |
JP2002314164A (ja) | 磁気トンネル素子及びその製造方法、薄膜磁気ヘッド、磁気メモリ、並びに磁気センサ | |
WO2018037777A1 (ja) | 磁気抵抗素子及び電子デバイス | |
US6982450B2 (en) | Magnetoresistive memory devices | |
US20070041125A1 (en) | Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the same | |
US6638774B2 (en) | Method of making resistive memory elements with reduced roughness | |
JP5294531B2 (ja) | フリー磁性膜を具備する磁気トンネリング接合セル及びそれを含む磁気ram | |
TWI682561B (zh) | 磁性記憶裝置及其製造方法 | |
JP2012142480A (ja) | 磁気トンネル接合素子、その製造方法、及びmram | |
US7173300B2 (en) | Magnetoresistive element, method for making the same, and magnetic memory device incorporating the same | |
JP2007158369A (ja) | 磁気抵抗デバイス及びその製造方法 | |
JP2008060583A (ja) | 電流誘導スイッチングを利用した磁気メモリ素子 | |
US20070164383A1 (en) | Magnetic random access memory with improved writing margin | |
JP2005109201A (ja) | 強磁性トンネル接合素子、磁気メモリセル及び磁気ヘッド |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20061102 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20061106 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070731 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110317 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110405 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110617 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111213 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120313 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120417 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120817 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20120824 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20120928 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130418 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130611 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5294531 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |