JP2005150361A - Method for forming optical electronic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for forming an optical electronic device in a low-temperature step namely, a method to diversify the selection of materials for respective components in the optical electronic device. <P>SOLUTION: This method is used to form an optical electronic device in a low-temperature step. In the low-temperature step, a conductive means is formed on a photoelectric layer in a low-temperature environment, and a general adhesive is used to adhere the photoelectric layer to a substrate and to keep and improve light emission efficiency. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method for forming a kind of optoelectronic device, and more particularly to a method for forming an optoelectronic device by a low temperature process and solid phase regrowth.

  In recent years, the use of optoelectronic devices has become more and more popular, such as light emitting diodes (LEDs), solar cells, and light sensors. Taking a light emitting diode as an example, the electrode is formed on a compound semiconductor material such as GaAs, GaN, or InP. For this reason, in order to obtain a good ohmic contact at the interface between the metal and the compound semiconductor, the light emitting diode is subjected to a high temperature treatment of 400 ° C. or more, for example, a rapid thermal annealing process (RTP) in the manufacturing process. I need. However, the material of the compound semiconductor or the material of the active layer that forms light emission changes under the influence of high temperature, thereby forming a reduction in product quality and light emission efficiency.

  Furthermore, a non-transparent substrate, such as GaAs, in the compound semiconductor material itself reduces the light emission efficiency because it absorbs light. Therefore, the light emitting efficiency of the light emitting diode can be improved by using the transparent substrate instead of the non-transparent substrate. However, if a high temperature of 400 ° C. or higher cannot be avoided in the ohmic contact manufacturing process, the method or material used when combined with the light emitting structure is compatible with the high temperature environment, whether it is a transparent substrate or a non-transparent substrate. Limited to the method and material used.

  For this reason, how to overcome the high temperature processing step in the manufacturing process, increase the selectivity at the time of coupling the light emitting structure of the non-transparent substrate and the transparent substrate, and increase the yield of the optoelectronic device, It is an important issue for development.

  It is an object of the present invention to provide a method of forming an optoelectronic device in a low temperature process, which is a method that increases the diversification of the selection of each element material in the optoelectronic device.

  Another object of the present invention is to provide a method of forming an optoelectronic device in a low temperature process, which forms an optoelectronic device comprising a transparent substrate in a low temperature process and a solid phase regrowth method, thereby improving the use efficiency of the optoelectronic device. It is assumed that this is a method for increasing

  It is another object of the present invention to provide a method of forming an optoelectronic device having a transparent substrate in a low temperature environment, in which a bonding layer or an active layer between the transparent substrate and the optoelectronic layer is affected by high temperature during the manufacturing process. It is assumed that the method can prevent the generation of defects due to the difference between different substances to affect the light emission quality and improve the quality of the optoelectronic device.

  The present invention provides a method of forming an optoelectronic device at a low temperature, which forms a photoelectron layer on a substrate, as well as forming a conductive means on the optoelectronic layer in a low temperature process and solid phase regrowth scheme, It is assumed that the method is to complete an optoelectronic device.

The invention of claim 1 provides a bottom material, and forms a photoelectron layer on the bottom material.
Forming a conductive means on the photoelectron layer;
Processing the conductive means in a temperature environment lower than 250 ° C. to form an ohmic contact;
An optoelectronic device forming method is characterized by comprising the above steps.
According to a second aspect of the present invention, there is provided a method for forming an optoelectronic device according to the first aspect, wherein the step of forming an ohmic contact is performed at a temperature lower than 200 ° C.
According to a third aspect of the present invention, there is provided a method for forming an optoelectronic device according to the first aspect, wherein the ohmic contact is formed by processing the conductive means and the photoelectron layer in a solid-phase regrowth method. The forming method.
According to a fourth aspect of the present invention, in the method for forming an optoelectronic device according to the first aspect, the conductive means is Ni, Pd, Ge, Si, Se, Zn, Be, Mg, Cd, Au, Ag, Pt, AuAg, AgPt. , A method of forming an optoelectronic device, characterized in that it is formed of any one or a combination of AuPt and AuAgPt.
According to a fifth aspect of the present invention, there is provided a method for forming an optoelectronic device according to the first aspect, wherein a photoelectron layer is formed on a transparent bottom material.

  The present invention provides a method of forming an optoelectronic device at low temperatures. When forming the optoelectronic device, the conductive means in the optoelectronic device is formed using a low temperature process and solid phase regrowth. Since it is not necessary to form the conductive means at a high temperature, the applicability of selecting various materials is increased. For example, in the direction of the substrate, either a transparent substrate or a non-transparent substrate can be selected, a transparent conductive material or a non-transparent conductive material can be selected as the conductive means, and the present invention increases the selectivity of the material by a low temperature process. In addition, since the structure of the device itself or the structure of other devices is not destroyed by the high temperature during the formation, the quality, applicability and use efficiency of the optoelectronic device can be improved.

  1 to 5 are process sectional views of a method of forming an optoelectronic device according to the present invention. The substrate of the present invention is not limited to a non-transparent substrate such as GaAs, and a transparent substrate can also be used. In this embodiment, a transparent substrate is used. First, as shown in FIG. 1, a photoelectron layer is formed on a bottom material 210, and the photoelectron layer of this embodiment is composed of a first semiconductor layer 220, an active layer 230, and a second semiconductor layer 240. . Next, as illustrated in FIG. 2, the bonding layer 250 and the substrate 260 are sequentially formed on the second semiconductor layer 240. Among them, the bonding layer 250 is used to bond the second semiconductor layer 240 and the substrate 260, and the substrate 260 is a transparent substrate.

  Subsequently, an appropriate method, for example, a lapping or etching process, or a lapping process is performed first, followed by an etching process, during which an etch stop layer is formed and the bottom material 210 is removed. Then turn it over and make it as shown in FIG.

  Thereafter, a photoelectron layer (not shown) is covered with a photoresist layer to define the light emitting structure. Subsequently, a part of the first semiconductor layer 220, a part of the active layer 230, and a part of the second semiconductor layer 240 are removed by an etching process, for example, a dry etching process or another etching process, for example, a wet etching process. The structure as shown in FIG. 4 is formed.

  Thereafter, as shown in FIG. 5, a conductive means such as an electrode 270 and an electrode 280 is formed on the first semiconductor layer 220 and the second semiconductor layer 240 by an electron deposition process, a sputtering process, a thermal deposition process, or other methods. Form. Thereafter, ohmic contacts are formed between the electrode 270 and the first semiconductor layer 220 and between the electrode 280 and the second semiconductor layer 240 by a solid phase regrowth process (SPR) by a low temperature process.

  When forming the conductive means, the electrode 270 and the electrode 280 can be formed using various kinds of sequences, and the first semiconductor layer 220 and the second semiconductor layer 240 can be formed in ohmic contact with the electrode 270 and the electrode 280, respectively. . As shown in FIG. 3 to FIG. 5, the first type of order is to form an electrode 270 and an electrode 280 on the first semiconductor layer 220 and the second semiconductor layer 240, and then perform an SPR process integrally. Ohmic contacts are formed between 270 and the first semiconductor layer 220 and between the electrode 280 and the second semiconductor layer 240. Alternatively, although not shown, after the optoelectronic device is formed in the second kind of order as in the structure of FIG. 3, an electrode 270 is formed on the first semiconductor layer 220, and the first semiconductor layer 220, the active layer 230 and the second semiconductor layer 240 are formed as shown in FIG. 4, and an electrode 280 is formed on the second semiconductor layer 240 to form the structure shown in FIG. Ohmic contacts are formed between 270 and the first semiconductor layer 220 and between the electrode 280 and the second semiconductor layer 240. Further, if necessary, when the optoelectronic device is formed as shown in FIG. 3 in the second kind of sequence, the electrode 270 is formed on the first semiconductor layer 220 first, and then the electrode 270 is formed in the SPR process. 4 is formed by the first semiconductor layer 220, the active layer 230, and the second semiconductor layer 240, and the second semiconductor layer 240 is formed on the second semiconductor layer 240. After forming the electrode 280 as shown in FIG. 5, a low temperature SPR process is further performed to form an ohmic contact between the electrode 280 and the second semiconductor layer 240. Alternatively, other different formation orders can occur depending on the design requirements of other devices.

  The process temperature for forming the electrodes 270 and 280 is controlled to 250 ° C. or lower, 200 ° C. or lower, 150 ° C. or higher, or 100 ° C. or higher and 175 ° C. or lower. The processes of the light-emitting diodes presented in this embodiment and other optoelectronic devices formed by applying the method of the present invention are completed at a lower temperature as compared with known techniques. Therefore, when the temperature is lower than or lower than 250 ° C., this temperature does not affect the active layer 230 in the photoelectron layer, and the active layer 230 can maintain good quality.

  In the photoelectron layer structure of the present embodiment using a light emitting diode as an example, the active layer 230 has a quantum well or other structure. The first semiconductor layer 220 close to the bottom material 210 may be an n-type semiconductor layer, and the second semiconductor layer 240 may be a p-type semiconductor layer. Alternatively, the opposite is possible by design, and the first semiconductor layer 220 may be a p-type semiconductor layer and the second semiconductor layer may be an n-type semiconductor layer. Of course, the structure of the optoelectronic layer can be modified according to the design requirements of the application device.

  The electrode 270 and the electrode 280 are made of various different components such as Ni, Pd, Ge, Si, Se, Zn, Be, Mg, Cd, Au, Ag, Pt, and Au, Ag and Pt. Arbitrary combinations of components, that is, any of AuAg, AgPt, AuPt and AuAgPt, and the combination order is unlimited, that is, the composition order is AgAu, PtAg, PtAu, AuPtAg, AgPtAu, AgAuPt, PtAuAg or PtAgAu sell. Of these, if A is displayed Ni and Pd, B is displayed Ge, Si and Se, C is displayed Zn, Be, Mg and Cd, D is Au, Ag, Pt, AuAg, AgPt and AuAgPt. If indicated, the components of electrode 270 and electrode 280 are respectively ABD and ACD (the composition order of A, B and D, and A, C and D is interchangeable), or other similar Made of alloy. When the first semiconductor layer 220 is an n-type semiconductor layer, the material selected for the electrode 270 can be an ABD substance, and when the second semiconductor layer 240 is a p-type semiconductor layer, the material is selected for the electrode 280. The material can be a substance of ACD, but the selected material can be modified if necessary. Of course, for a particular optoelectronic device design, the materials of electrode 270 and electrode 280 are not subject to the material limitations described above. The electrodes 270 and 280 are formed on the first semiconductor layer 220 and the second semiconductor layer 240 using a thermal evaporation process, an electron beam evaporation process, or other methods. The

  In this embodiment, the transparent substrate 260 is made of glass, quartz, acrylic resin (PMMA), acrylonitrile tributadiene styrene styrene copolymer (ABS resin), polymethyl methacrylate, sapphire. (Sapphire). Another choice is a thermoplastic polymer such as polysulfones, polyethersulfones, polyetherimides, polyimides, polyimide-imide, polyphenylene sulfide. Or silicon-carbon thermosets. In the preferred embodiment, the material of the substrate 260 is glass.

  The bonding layer 250 in this embodiment is made of a transparent adhesive, and the material thereof is epoxy resin, acrylonitrile tributadiene styrene styrene copolymer (ABS resin), polymethyl methacrylate (polymethyl methacrylate). The Another choice is a thermoplastic polymer such as polysulfones, polyethersulfones, polyetherimides, polyimides, polyimide-imide, polyphenylene sulfide. Or silicon-carbon thermosets. In the preferred embodiment, the material of the substrate 260 is an epoxy resin.

  Further, since some materials of the bonding layer 250 described above can form a transparent cured product after cooling, if necessary, the step of bonding or forming the substrate 260 is omitted, and the bonding layer 250 is directly formed. 2 formed on the semiconductor layer 240 and used as a substitute for the substrate 260 after curing, followed by the steps of FIGS. In addition, since the present invention forms an optoelectronic device using a low temperature process, a transparent substrate having a low melting point or an adhesive having a melting point lower than that of a general adhesive is used as a bonding layer to form the optoelectronic layer and the transparent substrate. Thus, it is possible to achieve diversification in selection between the substrate and the bonding layer material, and to simplify the bonding method.

  The contents of the above embodiments are exemplified by a light emitting diode, but the optoelectronic device of the present invention can be applied to a solar cell, a photosensor, or other conductive device in addition to the light emitting diode.

  That is, in the method for forming an optoelectronic device according to the present invention, a photoelectron layer is formed on a substrate, and then a conductive means is formed on the photoelectron layer by a low temperature process and a solid phase regrowth method. A relatively low device is formed (eg, acrylic as the substrate) to complete the formation of the optoelectronic device. The technical content described in the present invention increases the diversity in the selection of materials for optoelectronic devices or other devices with conductive means and simplifies the process of joining the transparent substrate and the semiconductor layer. When a transparent material is used as a substrate, the operation function and light emission efficiency of the optoelectronic device can be further enhanced by application of the transparent substrate.

  The above is the description of the embodiments of the present invention, and does not limit the scope of the present invention. Any modification or alteration of details that can be made based on the present invention shall fall within the scope of the claims of the present invention.

It is process sectional drawing of the formation method of the optoelectronic device by this invention. It is process sectional drawing of the formation method of the optoelectronic device by this invention. It is process sectional drawing of the formation method of the optoelectronic device by this invention. It is process sectional drawing of the formation method of the optoelectronic device by this invention. It is process sectional drawing of the formation method of the optoelectronic device by this invention.

Explanation of symbols

210 Bottom material 220 First semiconductor layer 230 Active layer 240 Second semiconductor layer 260 Transparent substrate 270 Electrode 280 Electrode

Claims (5)

Providing a bottom material and forming a photoelectron layer on the bottom material;
Forming a conductive means on the photoelectron layer;
Processing the conductive means in a temperature environment lower than 250 ° C. to form an ohmic contact;
A method of forming an optoelectronic device comprising the above steps.   2. The method of forming an optoelectronic device according to claim 1, wherein the step of forming an ohmic contact is performed at a temperature lower than 200.degree.   2. The method of forming an optoelectronic device according to claim 1, wherein the ohmic contact is formed by processing the conductive means and the optoelectronic layer in a solid-phase regrowth method.   2. The method of forming an optoelectronic device according to claim 1, wherein the conductive means is any one of Ni, Pd, Ge, Si, Se, Zn, Be, Mg, Cd, Au, Ag, Pt, AuAg, AgPt, AuPt and AuAgPt. Alternatively, a method for forming an optoelectronic device, which is formed by a combination thereof. 2. The method of forming an optoelectronic device according to claim 1, wherein a photoelectron layer is formed on the transparent bottom material.

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