JP2005146365A - Sputter film deposition machine, and sputtering film deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sputter film deposition machine which minimizes the space required to be exhausted, realizes uniform simultaneous two-side film deposition, and performs multilayer film deposition consisting of a plurality of materials without opening a chamber, and to provide a sputtering film deposition method using the same. <P>SOLUTION: The sputter film deposition machine is provided with: a cylindrical film deposition chamber 3 formed between an inner metal cylinder 2 and an outer metal cylinder 1; a carousel 4 for mounting a substrate which is inserted into the film deposition chamber and rotated around the axes of the inner and outer cylinders; and targets 7a and 7b disposed on the outer circumference of the inner cylinder and the inner circumference of the outer cylinder with the carousel interposed therebetween. The plurality of targets 7a and 7b are arranged in the circumferential direction of the film deposition chamber 3 at a predetermined interval, and an electrode 33 to individually apply voltage thereto is provided on each of the targets. Films are deposited simultaneously on both sides of the substrate by simultaneously energizing the targets 7a and 7b on the inner and outer sides facing each other while turning the carousel 4. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a sputtering film forming apparatus and a sputtering film forming method using the film forming apparatus, and performs film formation by attaching a ground (film forming substrate such as an optical lens) to a carousel (rotary conveyor). The present invention relates to an apparatus and a method.

  2. Description of the Related Art Conventionally, a carousel-type sputter film forming machine using a flat plate target employs a method of forming a film by attaching a target to a vacuum chamber wall.

  When forming an optical film by sputter deposition, a conventional carousel-type sputter deposition machine places a target on the outside of the carousel and discharges it toward the base holder attached to the outer surface of the carousel, or vice versa. In addition, a sputtering film forming machine was used in which a target was placed inside the carousel and the base holder was also attached to the inner surface of the carousel.

When forming the film on both sides of the substrate, after the film formation on one side is completed, the chamber is opened to the atmosphere and the substrate is inverted and attached to the other surface, or the other surface is formed using a Geneva inversion mechanism attached to the carousel. Sputter film formation has been performed again with the film formation surface facing the target side.
Japanese Patent Laid-Open No. 11-80945

  In this conventional double-side film formation method, the film formation time required for the sputter film formation requires twice as long as the single-side film formation. Also, when forming multiple layers, it is necessary to open the chamber and replace the target material, and again to form a film by evacuating the chamber, and it takes a long time to make the chamber high vacuum. There is a problem that it takes time to form a multilayer film.

  In the case of forming the underlayer to be formed on both sides one side at a time, in addition to the film formation time being doubled, a small amount of film-forming molecules wraps around in the vacuum during the formation of the single side and the non-deposition side of the underlayer When the target film is subsequently deposited without cleaning the surface, a small amount of low adhesion film is present on the base surface. The adhesion force is weakened, and the target film formed later peels off, or due to the difference in adhesion with the film formed first, a stress difference with the base surface is generated. There is a problem that the adhesive force is weakened due to secular change in relation to the film density between them, and there is a high possibility that problems such as peeling and cracking of the target film occur.

  Further, in the film formation of a plastic substrate such as an acrylic lens, the conventional method in which film formation on both sides is performed one side at a time causes a state in which the substrate is deformed by tensile stress during film formation on one surface, and film formation on the next surface. The distortion change of the underlying plastic will gradually progress with the progress of film formation on that surface, but as a result, when it is taken out to the atmosphere with the difference in generated stress between both surfaces left, it will further absorb moisture. There was a problem in that the distortion increased, resulting in film cracking.

  The present invention includes a cylindrical film formation chamber 3 formed between a metal inner cylinder 2 and an outer cylinder 1, and a base mounting that is inserted into the film formation chamber and rotates about the axis of the inner and outer cylinders. By providing a sputter film forming apparatus including a carousel 4 for use and targets 7a and 7b disposed on the outer periphery of the inner cylinder and the inner periphery of the outer cylinder with the carousel interposed therebetween, Has solved. As the targets 7a and 7b, it is preferable to use a rotating cylindrical target in which a target material is attached to the outer periphery of the pipe material 8 to a predetermined thickness.

  The sputter film forming apparatus according to claim 2 of the present application is the sputter film forming apparatus having the structure described above, wherein a plurality of targets 7 a and 7 b are placed on the inner cylinder 2 and the outer cylinder 1 at a predetermined interval in the circumferential direction of the film forming chamber 3. The electrodes 33 are provided so as to be individually applied with voltages to each of a plurality of targets arranged at intervals.

  The sputter film forming apparatus according to the invention of claim 3 is a sputter film forming apparatus having the structure described above, wherein the carousel 4 is mounted on one of the upper and lower lids 22 closing the small end of the cylindrical film forming chamber 3. 40. The carousel 4 is provided by hanging or standing on the other end of the upper and lower lids, and rotating pipe-like targets 7a and 7b attached to one end of the upper and lower lids via a rotating mechanism 30, and opening the upper and lower lids 21 and 22. In addition, the targets 7 a and 7 b are drawn from the film forming chamber 3.

  Further, the sputter film forming apparatus according to the invention of claim 4 is the sputter film forming apparatus having the structure described above, wherein the target rotates by rotating around the axis of the cylindrical film forming chamber 3 between the carousel 4 and the targets 7a and 7b. It is characterized by comprising shutter cylinders 5a and 5b for opening and closing the path of gas ions or film forming particles between 7a and 7b and the base mounted on the carousel 4. A preferable rotation angle of the shutter cylinders 5a and 5b for opening and closing the shutter is an angle of 45 degrees to 180 degrees. However, this rotation angle can be reduced when the diameters of the shutter cylinders 5a and 5b are large. In short, when the shutter cylinders 5a and 5b are in the closed state, the film formation particles wrap around the substrate. Any angle can be used as long as it can be prevented.

  In the sputtering film forming method according to claim 5 of the present invention, which is performed using the sputter film forming apparatus having the above structure, the inner and outer targets 7a and 7b opposed to each other with the carousel 4 being rotated are energized simultaneously. Then, both sides of the base are formed simultaneously.

  Further, the sputtering film forming method according to the invention of claim 6 uses the sputter film forming apparatus according to claim 2 and applies different target materials to the plurality of targets 7a and 7b spaced in the circumferential direction. By sequentially switching the voltage to a plurality of target materials, a plurality of layers of thin films are formed on the base.

  Further, in the sputtering film forming method according to the invention of claim 7 of the present application, the film forming machine according to claim 4 is used, and the openings 14 of the shutter cylinders 5a and 5b are shifted from the target materials 7a and 7b. After starting to rotate and apply voltage to the targets 7a and 7b, the shutter cylinders 5a and 5b are rotated to move the opening 14 to a position facing the energized targets 7a and 7b, thereby opening the shutter. Then, the film formation is started.

  The sputter film forming apparatus of the present invention has a cylindrical film forming chamber 3, which is a space where sputter film formation is performed, thereby minimizing the space that needs to be exhausted and shortening the exhaust time at the start of film formation. In addition, by arranging the targets 7a and 7b so as to face the inner and outer surfaces of the carousel 4 rotating in the film forming chamber, simultaneous film formation on both sides is made possible. By doing so, it is possible to form a uniform film and to improve the plasma convergence efficiency.

  The sputter film forming apparatus of the present invention includes a carousel 4 and shutter cylinders 5a and 5b arranged in a cylindrical film forming chamber 3, and a plurality of films necessary for sputter film formation on inner and outer wall portions of the film forming chamber. The targets 7a and 7b, the target magnet 9 and the magnetic field compression magnet 10 are mounted on the inner and outer cylinders 1 and 2 of the chamber defining the film forming chamber and the upper and lower lids 21 and 22 closing the small end thereof. Thus, uniform film formation by swirling the substrate and simultaneous film formation on both sides are possible, and multilayer film formation of a plurality of materials is possible without opening the chamber.

  Further, as an internal mechanism, the target cover 11 coaxial with the axis of the rotating cylindrical targets 7a and 7b is provided as an anode, so that the discharge of the cylindrical targets 7a and 7b has been dramatically stabilized.

  In simultaneous double-sided film formation, the cause of the problem of film deposition material wrapping around and adhering to the opposite surface during single-sided film formation is eliminated, and film formation at the same rate on the bottom surface of the front and back is performed simultaneously. The film is formed while applying the same tensile stress to both sides of the substrate, and it is possible to reduce the possibility of generating a bias stress on the substrate, minimizing the occurrence of film peeling and cracking. Is possible.

  Cylindrical targets 7a and 7b are attached to one of the upper and lower cover plates 21 of the cylindrical film formation chamber 3, and the other 22 is provided with a carousel 4 and shutter cylinders 5a and 5b that rotate concentrically therewith. By providing the film forming openings 14 at 5 b so as to open at an angle of 60 to 180 degrees, the plasma potential does not affect the interaction of the discharge voltage between adjacent targets.

  Using the sputter film forming apparatus capable of simultaneous film formation on both sides of the present invention, the anti-reflection coating (AR coating) is applied to an acrylic molded lens on both sides simultaneously. No film cracking phenomenon was observed.

  FIG. 1 is a cross-sectional view of a central portion of the apparatus of the embodiment, and FIG. The apparatus as a whole has a cylindrical shape having an axis in a direction perpendicular to the plane of FIG. Reference numeral 1 denotes an outer cylinder of the chamber, and 2 denotes an inner cylinder, and a cylindrical film forming chamber 3 for performing sputtering film formation is formed between the two. The cylindrical film forming chamber 3 is inserted with a polygonal cylindrical carousel 4 provided with a plurality of base holders for holding the base. Cylindrical shutter cylinders 5a and 5b are provided outside and inside the carousel. Has been inserted.

  At predetermined positions on the outer peripheral surface of the inner cylinder 2 and the inner peripheral surface of the outer cylinder 1, bowl-shaped target insertion grooves 6 a and 6 b having a circular cross section are formed with the film formation chamber 3 interposed therebetween. Rotation targets 7a and 7b are inserted. The inner and outer pairs of targets 7a and 7b are opposed to each other with the carousel 4 and the inner and outer shutter cylinders 5a and 5b interposed therebetween. In the illustrated embodiment, such target pairs are located at three locations in the circumferential direction of the apparatus. Arranged at intervals of 90 degrees. Each target 7a, 7b is attached to the peripheral surface of the target support pipe 8, and an elongated target magnet 9 is inserted through the axis of the target support pipe 8 in the direction perpendicular to the paper surface of the figure, and each target 7a, 7b. The magnets for magnetic field compression 10 elongated in the same manner in the direction perpendicular to the plane of the drawing are arranged on both sides in the vicinity.

  The outer periphery of the cylindrical targets 7a and 7b excluding the surface facing the carousel 4 is surrounded by a bowl-shaped target cover 11 made of a copper plate and having a circular cross section. It opens in the shape of a letter C so as to face 5a and 5b and extends into the film forming chamber 3. The sputtering gas introduced into the film forming chamber 3 is sent to the back of the target insertion groove 6b from the gas supply hole 12 and the lateral hole 12b provided in the inner cylinder 2, and the target is inserted from the lateral hole 12a provided in the outer cylinder. It is sent to the back of the groove 6 a, passes between the targets 7 a and 7 b and the target cover 11, and is supplied to the film forming chamber 3.

  The carousel 4 is provided with a plurality of base holders 13 for attaching bases on which sputter film formation is performed, and the shutter cylinders 5a and 5b are provided with openings 14 at positions where the base holders are provided (FIG. 5). , 6). The shutter cylinders 5a and 5b can be rotated by a predetermined angle around the central axis A, and when performing sputtering film formation, the shutter cylinders 5a and 5b are arranged so that the opening 14 faces the targets 7a and 7b. 5b is rotated. The carousel 4 is driven to rotate at a constant speed around the central axis A during film formation.

  Sputtering film formation in the apparatus of the present invention is performed as follows. The substrate is fixed to the substrate holder 13 of the carousel 4 and inserted into the film forming chamber 3, and the target support pipe 8 with the targets 7a and 7b of the material to be formed is inserted into the target insertion grooves 6a and 6b. The film forming chamber 3 is sealed. After the film forming chamber 3 is evacuated, the carousel 4 is rotated with the shutter cylinders 5a and 5b closed, the targets 7a and 7b are rotated about the central axis A, and a high negative voltage is applied to the targets. When the sputtering gas introduced into the film formation chamber 3 reaches a steady state, the shutter cylinders 5a and 5b are rotated to open the shutter, and film formation is performed while the targets 7a and 7b and the carousel 4 are rotated.

  During film formation, the substrate attached to the carousel 4 is formed when it crosses the openings 14 of the shutter cylinders 5a and 5b, and is more uniform on the entire substrate surface than when film formation is performed in a stationary state. Film formation is possible. When depositing the same material on the front and back surfaces of the base, the inner and outer target materials are the same material, and when depositing different materials, targets of different materials are inserted.

  For example, when three layers of materials a, b, and c are formed on the base, a pair of three targets is a material a, a pair is a material b, and the other pair is a material c. Then, a voltage is applied to the film to form a film, then a voltage is applied to the target of material b to form a film of b, and finally a voltage is applied to the target of material c to form a film of c. Do the membrane. Even in the case of film formation of four or more layers, as long as the number of film materials is within three kinds, multilayer film formation can be performed without opening the chamber. If the number of targets 7a and 7b arranged on the circumference of the film forming chamber 3 is increased, the types of film materials can be increased. Interference between adjacent targets when the number of targets 7a and 7b is increased can be avoided by increasing the diameter of the film forming chamber 3.

  That is, according to the sputtering apparatus of the present invention, it is possible to perform double-sided simultaneous multi-layer film formation of a plurality of materials without opening the chamber to the atmosphere. It is not necessary to perform the work of evacuating the chamber, and the film formation efficiency can be greatly improved. Furthermore, in the present invention, the film formation is performed while the substrate is traveling in the carousel 4, so that uniform film formation on the substrate surface is possible and the film formation chamber 3 has a narrow cylindrical shape and the volume can be reduced. In addition, the time required for evacuating the chamber can be shortened, and the supply amount of sputtering gas can be reduced.

Next, the detailed structure of the embodiment apparatus shown in the drawings will be described.
The vacuum chamber is formed by a solid inner cylinder 2, an outer cylinder 1, an upper lid 21, and a lower lid 22, and a cylindrical film formation chamber 3 is formed between the inner cylinder 2 and the outer cylinder 1. Yes. The inner cylinder 2 is fixed to the lower surface of the upper lid 21. The upper lid 21 and the lower lid 22 are guided by a vertical guide bar (not shown) fixed to the outer cylinder 1 and can be opened and closed by parallel translation in the vertical direction. On the outer periphery of the inner cylinder 2 and the inner periphery of the outer cylinder 1, bowl-shaped target insertion grooves 6 a and 6 b having a circular section whose part of the peripheral surface opens into the film forming chamber 3 are parallel to the central axis A, Three pairs are provided at intervals of 90 degrees with the cylinder side and the outer cylinder side facing each other. Further, on both sides of each target insertion groove 6a, 6b, an outer cylinder side magnet insertion groove 23a and an inner cylinder side magnet insertion hole 23b for inserting magnetic poles for magnetic field compression are formed in parallel with the target insertion grooves 6a, 6b. It is installed. Further, a sputter gas supply hole 12 is formed in parallel with the target insertion groove 6b at a position behind the target insertion groove 6b of the inner cylinder 2, and the sputter gas supply hole 12 is a lateral hole 12b in the radial direction of the target insertion groove 6b. It communicates with the back. On the other hand, in the target insertion groove 6a of the outer cylinder 1, a lateral hole 12a for supplying a sputtering gas is opened on the back surface. Further, although the inner cylinder 2 is provided with a cooling water hole that opens to the magnet insertion hole 23b, it is omitted in the drawing.

  The targets 7a and 7b are elongated cylindrical targets in which a target material is adhered to the outer periphery excluding the upper end of the target support pipe 8 to a predetermined thickness by thermal spraying or the like, and are suspended from the axis of the target insertion grooves 6a and 6b. The lower end of the target support pipe 8 is closed, and cooling water is supplied into the pipe 8 from the upper end. Further, a rod-like target magnet 9 is inserted into the pipe 8. Three elongated magnets 9 a and 9 b are fixed to the target magnet 9. Of the three magnets, the central magnet 9a and the two magnets 9b on both sides have opposite magnetic poles, and a leakage magnetic field is generated in front of the targets 7a and 7b.

  An opening is provided in the upper lid 21 coaxially with the target insertion grooves 6a and 6b, and a magnetic seal case 25 is fixed to the upper portion thereof. A hollow shaft 26 is rotatably inserted into the magnetic seal case, and a driven gear 27 is fixed to the upper end of the hollow shaft. An elbow 29 for supplying cooling water is attached to the upper portion of the driven gear 27 via a rotary joint 28. The target support pipe 8 is suspended with its upper end fixed to the lower end of the hollow shaft 26, and the target magnet 9 is a hollow suspension shaft (not shown) whose upper end extends downward from the elbow 29. ) And suspended in the hollow hole of the target support pipe 8. A pair of driven gears 27 suspending the pair of inner cylinder side and outer cylinder side targets 7a, 7b is a drive gear 31 attached to an output shaft of a target drive motor 30 provided adjacent to each pair. Is engaged. That is, the pair of inner and outer targets 7 a and 7 b are synchronously rotated by the target drive motor 30. The cylindrical targets 7a and 7b are rotated at a constant speed during sputtering so that the target material is consumed uniformly.

  The magnetic seal case 25 described above is made of an insulating material, and an electrode ring 32 is fixed to the lower portion of the driven gear 27. On the other hand, an electrode shoe slidably contacting the electrode ring is provided on the upper surface of the upper lid 21. A power supply 34 provided with 33 is mounted.

  A target cover 11 having a cylindrical bowl shape elongated in the vertical direction is provided so as to be positioned between the target insertion grooves 6a and 6b and the targets 7a and 7b inserted therein. A guide 11a is formed in front of 7a and 7b to guide the target molecule by opening in a square shape.

  The target cover 11 closes the space between the target insertion grooves 6a and 6b and the target cover 11 at the portion where the target insertion grooves 6a and 6b open into the film formation chamber 3, and penetrates appropriately behind the target. A hole is provided. Sputtering gas supplied from the lateral holes 12b and 12a of the inner cylinder 2 and the outer cylinder 1 passes through the through holes of the target cover 11 and enters the film forming chamber 3 from the space between the target cover 11 and the targets 7a and 7b. leak. The exhaust port for the sputtering gas is provided on the side of the inner cylinder 2 where the target insertion groove 6b is not provided (not shown).

  The outer cylinder 1 of the chamber is made of aluminum, the inner cylinder 2 is made of stainless steel, and a copper plate 35 is attached to the inner peripheral surface of the outer cylinder 1 and the outer peripheral surface of the inner cylinder 2. The upper and lower lids 21 and 22 are made of stainless steel. On the side of the outer cylinder 1 where the target insertion groove 6a is not provided, a duct 36 for evacuating the film forming chamber 3 is provided.

  The rod-shaped magnetic field compression magnet 10 inserted into the magnet insertion groove and the magnet insertion holes 23a and 23b has the same structure as the target magnet 9 and includes three magnets 10a and 10b that are elongated in the axial direction. The magnetic field compression magnet 10 is fixed to the outer cylinder 1 or the inner cylinder 2 at two positions in the axial direction by adjusting the directions of the magnets 10a and 10b.

  A motor support plate 37 is provided below the lower lid 22, and a carousel drive motor 38 that rotationally drives the carousel 4 is mounted at the center of the lower surface of the motor support plate. The output shaft of the carousel drive motor 38 extends through the magnetic seal case 39 fixed to the lower surface of the lower lid and extends above the lower lid 22, and the carousel support disk 40 is fixed to the upper end thereof. Immediately below the carousel support disc 40, a shutter support disc 41 is fixedly provided on the upper surface of a driven gear 42 that is rotatably supported coaxially with the carousel support disc 40.

  A reciprocating motor 43 that reciprocally rotates the shutter cylinders 5 a and 5 b is attached to the lower surface eccentric position of the motor support plate 37. An output shaft of the reciprocating motor 43 passes through a magnetic seal case 44 fixed to the lower lid 22 and projects to the upper surface of the lower lid 22, and a drive gear 45 is fixed to the upper end thereof. The drive gear 45 meshes with the driven gear 42 on the lower surface of the shutter support disc 41 described above.

  On the outer periphery of the carousel support disc 40, support rods 46 are erected at predetermined intervals, and the carousel 4 is mounted in a polygonal cylindrical shape while being wound around the support rods. As shown in FIG. 5, a plurality of base holders 13 are arranged in the vertical direction on each surface of the carousel 4 having a polygonal cylindrical shape. A base (for example, a lens) on which sputtering film formation is performed is mounted on the base holder 13.

  On the outer periphery of the shutter support disc 41, a cylindrical outer shutter cylinder 5a formed of a copper plate is erected with its lower edge fixed. An inner flange 47 is detachably fixed to the upper edge of the outer shutter cylinder 5a, and the upper edge of the inner shutter cylinder 5b made of the same copper plate is fixed to the inner peripheral edge of the inner flange 47. The inner flange 47 is located above the carousel 4, and therefore the outer shutter cylinder 5 a and the inner shutter cylinder 5 b block the outer surface and inner surface of the carousel 4. The inner and outer shutter cylinders 5a and 5b are provided with shutter openings 14 at three positions at intervals of 90 degrees in the circumferential direction and at positions facing the base holder 13 provided in the carousel in the vertical direction. Yes.

  When the shutter support disk 41 is rotated so that the openings 14 of the shutter cylinders 5a and 5b are opposed to the targets 7a and 7b, the shutter is opened, and sputtering on the ground becomes possible. On the other hand, for example, when the shutter support disk 41 is rotated 45 degrees from the position and the shutter cylinders 5a and 5b are rotated so that the opening 14 is positioned away from the targets 7a and 7b, the shutter is closed, Sputtering film formation with respect to is impossible. By arranging the targets 7a and 7b to be paired inside and outside the carousel 4, and by arranging the openings 14 of the shutter cylinders 5a and 5b to be paired inside and outside, the sputtering film formation on the base is performed on both sides simultaneously. be able to.

  A longitudinal beam hole 50 is provided at the axial center of the inner cylinder 2 so as to pass through the upper lid 21 and serve as a light beam passage for detecting the film thickness. The transverse beam hole 51 is drilled in a direction in which the target insertion groove 6b and the magnet insertion hole 23b are not provided. A right-angle prism 52 is fixed at the intersection of the vertical and horizontal beam holes 50 and 51. Transparent windows 53b and 53a are provided at the position where the transverse beam hole 51 on the inner cylinder peripheral surface opens and on the extension of the transverse beam hole 51 of the outer cylinder 1.

  On the other hand, a test piece holder 54 is provided at a position facing the horizontal beam hole 51 in the lower portion of the carousel 4, and an opening 55 is provided at a position facing the test piece holder 54 in the inner and outer shutter cylinders. It has been.

  When a fixture (bolt or the like) that fixes the lower lid 22 to the outer cylinder 1 of the chamber is removed and the lower lid 22 is opened downward along the vertical guide bar, the carousel 4 and the shutter cylinders 5a and 5b are Then, it is pulled out from the film forming chamber 3. Further, when the inner flange 47 that fixes the inner shutter cylinder 5b is removed from the upper edge of the outer shutter cylinder 5a and pulled upward, the carousel 4 can be removed from the support rod 46, and the base holder 13 can be removed. The base can be attached and detached.

  On the other hand, when the fixing member that fixes the upper lid 21 to the outer cylinder 1 of the chamber is removed and the upper lid 21 is moved upward along the vertical guide bar and opened, the inner cylinder 2, the target support pipe 8 and the target magnet are opened. 9 is pulled out together with the upper lid 21. Further, when the inner cylinder 2 of the chamber is removed from the upper lid 21 and pulled out downward, the inner and outer target support pipes 8 are pulled out from the respective target insertion grooves 6a and 6b and become replaceable.

  In this way, the upper lid 21 and the lower lid 22 are opened, and the substrate on which sputtering film formation is to be performed is attached to the carousel 4, the target support pipe 8 to which the film formation material is attached is attached, and the upper and lower lids 21 and 22 are closed. After being fixed to the outer cylinder 1 and sealing the film formation chamber 3 and evacuating the film formation chamber 3 through the duct 36, the gas supply hole 12 that opens to the upper lid and the gas supply side hole 12a that opens to the side of the outer cylinder A sputtering gas such as an inert gas or methane gas is supplied to the film forming chamber 3, a high negative voltage is applied from the electrode shoe 33 to the predetermined targets 7a and 7b, and the targets 7a and 7b and the carousel 4 are continuously rotated. Open the shutter and perform sputtering film formation. When film formation of the first layer is completed, the shutter is once closed, the target to which the voltage is applied is changed, the shutter is opened, and film formation of the second layer is continued. In the illustrated embodiment, three targets are provided for each of the inside and outside, so that multilayer film formation of three kinds of materials can be continuously performed on the inside and outside of the base without opening the chamber.

  In the illustrated embodiment apparatus, a test piece is attached to the test piece holder 54 of the carousel 4, and a light projecting light source 56 and an optical sensor 57 are provided above the vertical beam hole 50 of the upper lid and outside of the transparent window 53a of the outer cylinder. By disposing, it is possible to form a film while measuring with an optical film thickness measuring instrument.

Top view showing the main structure of the example Enlarged view of the main part of FIG. 1 is a central vertical cross-sectional view of the film forming apparatus of FIG. Top view of the upper lid of the film forming apparatus of FIG. Carousel perspective view Perspective view of shutter tube

Explanation of symbols

1 Chamber outer cylinder 2 Chamber inner cylinder 3 Cylindrical film forming chamber 4 Carousel
5a Outer shutter cylinder
5b Inner shutter cylinder
7a Outer rotating target
7b Inner rotating target
22 Lower lid
33 Electrode shoe
40 carousel support disc

Claims (7)

  A cylindrical film-forming chamber (3) formed between the metal inner cylinder (2) and the outer cylinder (1), and is inserted into the film-forming chamber and rotates around the axis of the inner and outer cylinders. A sputter deposition apparatus comprising a carousel (4) for mounting a base and targets (7a, 7b) disposed on the outer periphery of the inner cylinder and the inner periphery of the outer cylinder with the carousel interposed therebetween.   A plurality of targets (7a, 7b) are arranged at predetermined intervals in the circumferential direction of the film formation chamber (3), and electrodes (33) for individually applying voltages to the plurality of targets at the intervals. The sputter film forming apparatus according to claim 1, further comprising:   The carousel (4) is suspended or erected on the rotating support plate (40) attached to one of the upper and lower lids (22) that closes the small end of the cylindrical film formation chamber (3). One end of the target (7a, 7b) is mounted via the rotation mechanism (30), and the carousel (4) and the target (7a, 7b) are pulled out from the film formation chamber (3) by opening the upper and lower lids. Item 3. The sputter deposition machine according to Item 1 or 2.   Between the carousel (4) and the target (7a, 7b), it rotates around the axis of the cylindrical film formation chamber (3) and between the target (7a, 7b) and the substrate mounted on the carousel (4). 4. The sputter film forming apparatus according to claim 1, further comprising a shutter cylinder (5a, 5b) for opening and closing a passage of the gas ions or film forming particles.   Using the film-forming machine according to claim 1, 2, 3 or 4, and simultaneously energizing the inner and outer targets (7a, 7b) while rotating the carousel (4) to form both surfaces of the base simultaneously. Sputtering film forming method.   Using the film forming apparatus of claim 2, different target materials are used for a plurality of targets (7a, 7b) spaced apart in the circumferential direction, and the applied voltage is sequentially switched to the plurality of target materials to form a plurality of layers on the ground. A sputtering film forming method for forming a thin film.   A sputtering film forming method, wherein the film forming apparatus according to claim 4 is used, and after starting the rotation of the carousel (4) and applying a voltage to the target (7a, 7b), the film is opened by opening the shutter.

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