JP2005146312A - Method of forming film body having micropore, film body, method of forming mask for forming film body having micropore, and mask for forming film body having micropore - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a new technique for easily forming a micropore having steep edges without giving damage to a substrate layer or the like. <P>SOLUTION: A first film body is formed via a resist pattern formed on a substrate layer, the resist pattern is then removed to form a first patterning mask. Then, the exposed part of the substrate layer is removed by etching using the first patterning mask to form a second patterning mask 17. Next, a second film body 18 is formed via the second patterning mask. Thereafter, the second patterning mask is removed to form a film body having a micropore. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method for forming a film body having fine holes, a film body, a method for forming a film body forming mask having fine holes, and a film body forming mask having fine holes.

  Nanotechnology applying fine structures is expected as a breakthrough in industry. As such a nanotechnology, in recent years, near-field optics that uses light emitted from the micropores by forming micropores with a diameter of several tens of nanometers smaller than the wavelength in a metal film has attracted attention. In such near-field optics, establishment of a technique for producing the fine holes with high accuracy is required.

  Conventionally, the fine holes are formed by forming a predetermined film body and then irradiating the film body with a focused ion beam to partially remove the film body by etching. However, in the method using the focused ion beam, the focused ion beam may damage the underlying layer located below the film body after the micropores are formed in the film body. As a result, when a predetermined semiconductor element is formed using such an assembly, the characteristics of the semiconductor element may be deteriorated due to damage to the underlying layer.

  On the other hand, after forming a predetermined resist layer, the resist layer is patterned by electron beam exposure, a film body is formed through the obtained patterning mask, and then the patterning mask is removed to form the film body. Attempts have also been made to form micropores corresponding to the patterning mask. However, the edge portion of the fine hole becomes unclear, and a practical semiconductor device using the assembly having the fine hole cannot be obtained.

  An object of the present invention is to provide a novel technique capable of easily forming micropores having steep edges in a predetermined film body without damaging an underlayer or the like.

In order to achieve the above object, the present invention provides:
Forming a base layer on a predetermined substrate;
Forming a resist layer on the underlayer, performing photolithography on the resist layer, forming an opening so that the surface of the substrate is exposed, and forming a resist pattern;
Forming a film on the resist pattern, and forming a first film body in the opening and on the resist pattern;
Forming a first patterning mask made of the first film body patterned by the opening on the underlayer by removing the resist pattern;
Via the first patterning mask, the portion of the base layer exposed from the first patterning mask is removed by etching so that the surface of the substrate is exposed, and the base layer and the first film are removed. Forming a second patterning mask comprising a body;
Performing a film forming process through the second patterning mask to form a second film body on the second patterning mask and the substrate;
Removing the second patterning mask to form micropores corresponding to the second patterning mask in the second film body;
It is related with the formation method of the thin film which has a micropore characterized by comprising.

The present invention also provides:
Forming a base layer on a predetermined substrate;
Forming a resist layer on the underlayer, performing photolithography on the resist layer, forming an opening so that the surface of the substrate is exposed, and forming a resist pattern;
Performing a film forming process on the resist pattern, and forming a predetermined film body in the opening and on the resist pattern;
Forming a first patterning mask made of the film body patterned by the opening on the underlayer by removing the resist pattern;
Via the first patterning mask, a portion of the base layer exposed from the first patterning mask is removed by etching so that the surface of the base material is exposed, and the base layer and the film body are formed. Forming a second patterning mask;
The present invention relates to a method for forming a mask for forming a film body having fine holes.

  According to the present invention, in addition to producing a general-purpose resist pattern having a predetermined opening, a film formation process via the resist pattern and removal of the resist pattern can be used to remove the resist pattern from the convex film body. A first patterning mask to be formed, and further, using the first patterning mask, the underlying layer located below the first patterning mask is removed by etching to directly project the film on the substrate. A second patterning mask made of is made.

  Therefore, if a film forming process is performed through the second patterning mask and then the second patterning mask is removed, a portion corresponding to the second patterning mask is formed on the substrate. Thus, a predetermined film body in which fine holes are formed is formed.

  As described above, according to the present invention, in addition to the general-purpose resist pattern, the first patterning mask and the second patterning mask configured by the above-described convex film body are continuously manufactured, and the second patterning mask is formed. By simply performing a normal film forming process and mask removal process using a patterning mask, a fine hole having a steep edge with respect to a predetermined film body can be formed.

  In a preferred embodiment of the present invention, the resist layer is composed of a positive resist. Accordingly, the resist pattern having a fine opening can be easily formed with high accuracy, and based on this, the first patterning mask and the second patterning mask can be formed with high accuracy. it can. Therefore, a film body having finer holes can be easily formed.

  In another preferable aspect of the present invention, the base layer is made of an insulating material, and the first film body is made of a metal material. In this case, when the second patterning mask is produced from the first patterning mask using an etching means such as dry etching, the first film body is sufficiently resistant to the etching species. At the same time, the underlying layer located below the first patterning mask can be easily removed by etching. As a result, the production of the second patterning mask becomes easier and the edges become steep so as to exhibit good edge characteristics. Therefore, it is possible to more easily form a film body having fine holes with sharp edges.

  Although the film body having fine pores finally obtained can be applied to various uses, it can be composed of various materials depending on the use. For example, if the film body is made of a metal material, the film body can be formed using a physical vapor deposition technique. It is possible to more easily form the film body having micropores reflecting the shape of the second patterning mask.

  As described above, according to the present invention, it is possible to provide a novel technique capable of easily forming a fine hole having a steep edge in a predetermined film body without damaging an underlayer or the like. Can do.

  The details of the present invention and other features and advantages will be described in detail below based on the best mode.

  FIGS. 1-7 is process drawing for demonstrating an example of the formation method of the film body which has a micropore of this invention. As shown in FIG. 1, first, a base layer 12 and a resist layer 13 are sequentially formed on a predetermined base material 11. Next, the resist layer 13 is exposed through a predetermined mask M and subjected to development processing, thereby forming a resist pattern 14 having openings 14A as shown in FIG.

  The diameter of the opening 14A is preferably 10 nm to 100 nm. As a result, through the formation of the first patterning mask and the second patterning mask described below, the diameter of the micropores finally formed in the film body can be as fine as 10 nm to 100 nm, which has been difficult to realize so far. It becomes possible to become.

  The opening 14A having the above-described size can be easily formed through the above-described exposure and development processing by forming the resist layer 13 from a general-purpose positive resist.

  Next, as shown in FIG. 3, a film forming process is performed through the resist pattern 14 to form a first film body 15 in the opening 14 </ b> A and on the resist pattern 14. Next, the resist pattern 14 is lifted off, and a first patterning mask 16 composed of the remaining first film body 15 is formed.

  Next, dry etching is performed on the underlayer 12 through the first patterning mask 16, and a portion of the underlayer 12 exposed from the first patterning mask 16 is removed by etching until the surface of the substrate 11 is exposed. Then, a second patterning mask 17 is obtained in which the upper layer portion is formed of the remaining portion of the first film body 15 and the lower layer portion is formed of the remaining portion of the underlayer 12.

  Next, as shown in FIG. 6, a film forming process is performed through the second patterning mask 17 to form a second film body 18 on the exposed surface of the substrate 11 and on the second patterning mask 17. . Next, as shown in FIG. 7, by removing the second patterning mask 17, the film body 19 having the fine holes 19 </ b> A can be obtained. The diameter of the fine hole 19A can be reduced to 10 nm to 100 nm as described above.

  The removal of the second patterning mask 17 can be performed by dissolving the lower layer portion constituted by the remaining portion of the underlayer 12 using a solvent such as a hydrofluoric acid buffer solution.

  Moreover, it turns out that the assembly comprised from the base material 11 and the 2nd patterning mask 17 which are shown in FIG. 5 functions as a mask for obtaining the final film body 19.

  The underlayer 12 is preferably made of an insulating material, and the first film body 15 is preferably made of a metal material. In this case, when the first patterning mask 16 to the second patterning mask 17 are produced by the above-described dry etching, the first film body 15 becomes sufficiently resistant to the etching species, and Etching of the underlying layer 12 located below the one patterning mask 16 can be performed easily. As a result, the production of the second patterning mask 17 becomes easier and the edges become steep so as to exhibit good edge characteristics. Therefore, the edge of the fine hole 19A of the film body 19 can be sharpened and the formation thereof can be easily realized.

  The film body 19 having the fine holes 19A can be applied to various uses, and can be made of various materials according to the use. For example, if the film body 19 is made of a metal material, the film body 19 can be formed using a physical vapor deposition technique. The film body 19 having the fine holes 19A reflecting the shape of the second patterning mask 17 can be more easily formed.

  The thicknesses of the resist layer 13 and the first film body 15 can be set as appropriate so that the series of steps described above can be performed satisfactorily. Further, since the thickness of the second film body 18 is reflected in the thickness of the film body 19 finally obtained, it can be arbitrarily set due to the thickness of the film body 19 to be obtained.

An Au film having fine holes was formed according to the above-described process. A GaP substrate was used as the substrate, and a 20 nm thick SiO ₂ film formed by a plasma CVD method was used as the underlayer. In addition, a Cr film having a thickness of 10 nm formed by a vacuum deposition method is used as the first film body, and a Cr / Au film having a thickness of 10 nm formed by a vacuum deposition method as the second film body (Cr film 3 nm, Au film) 7 nm) was used.

  FIG. 8 is an electron micrograph showing the state of micropores in the obtained Au film. As is apparent from FIG. 8, it was confirmed that fine holes having a diameter of about 30 nm were formed in the Au film obtained in this example.

  FIG. 9 is a photomicrograph showing the state of the first patterning mask made of the Cr film used for forming the Au film. As is apparent from FIG. 9, it was confirmed that the convex member having a diameter of about 40 nm, which is a constituent member, is also formed with high accuracy in the first patterning mask used for the production of the Au film. .

  As described above, the present invention has been described in detail based on the embodiments of the present invention with specific examples. However, the present invention is not limited to the above contents, and all modifications and changes are made without departing from the scope of the present invention. It can be changed.

It is process drawing for demonstrating an example of the formation method of the film body which has a micropore of this invention. It is a figure which shows the next process of the process shown in FIG. It is a figure which shows the next process of the process shown in FIG. FIG. 4 is a diagram showing a step subsequent to the step shown in FIG. 3. It is a figure which shows the next process of the process shown in FIG. FIG. 6 is a diagram showing a step subsequent to the step shown in FIG. 5. FIG. 7 is a diagram showing a step subsequent to the step shown in FIG. 6. It is an electron micrograph which shows an example of the film body which has the micropore of this invention. It is an electron micrograph which shows an example of the 1st patterning mask used with the formation method of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 Base material 12 Underlayer 13 Resist layer 14 Resist pattern 14A Opening 15 1st film body 16 1st patterning mask 17 2nd patterning mask 18 2nd film body 19 Film body 19A Micropore

Claims (18)

Forming a base layer on a predetermined substrate;
Forming a resist layer on the underlayer, performing photolithography on the resist layer, forming an opening so that the surface of the substrate is exposed, and forming a resist pattern;
Forming a film on the resist pattern, and forming a first film body in the opening and on the resist pattern;
Forming a first patterning mask made of the first film body patterned by the opening on the underlayer by removing the resist pattern;
Via the first patterning mask, the portion of the base layer exposed from the first patterning mask is removed by etching so that the surface of the substrate is exposed, and the base layer and the first film are removed. Forming a second patterning mask comprising a body;
Performing a film forming process through the second patterning mask to form a second film body on the second patterning mask and the substrate;
Removing the second patterning mask to form micropores corresponding to the second patterning mask in the second film body;
A method for forming a thin film having micropores, comprising:   The method for forming a thin film having micropores according to claim 1, wherein the resist layer is composed of a positive resist.   The method for forming a thin film having micropores according to claim 1 or 2, wherein the diameter of the opening is 10 nm to 100 nm.   The method for forming a thin film according to any one of claims 1 to 3, wherein the diameter of the micropore is 10 nm to 100 nm.   The method for forming a thin film having micropores according to claim 1, wherein the underlayer is made of an insulating material.   The method for forming a thin film having micropores according to any one of claims 1 to 5, wherein the first film body is made of a metal material.   The method for forming a film body according to claim 1, wherein the second film body is made of a metal material.   A film body having fine pores of 10 nm to 100 nm.   The film body according to claim 8, wherein the film body is made of a predetermined metal material. Forming a base layer on a predetermined substrate;
Forming a resist layer on the underlayer, performing photolithography on the resist layer, forming an opening so that the surface of the base material is exposed, and forming a resist pattern;
Performing a film forming process on the resist pattern, and forming a predetermined film body in the opening and on the resist pattern;
Forming a first patterning mask made of the film body patterned by the opening on the underlayer by removing the resist pattern;
The portion exposed from the first patterning mask of the base layer is etched away through the first patterning mask so that the surface of the base material is exposed, and the base layer and the film body are formed. Forming a second patterning mask;
A method for forming a mask for forming a film body having fine holes, comprising:   The method for forming a mask for forming a film body having micropores according to claim 10, wherein the resist layer is composed of a positive resist.   12. The method for forming a film body forming mask having micro holes according to claim 10, wherein the diameter of the opening is 10 nm to 100 nm.   The method for forming a mask for forming a film body having micropores according to any one of claims 10 to 12, wherein the second patterning mask has micropores of 10 nm to 100 nm.   The method for forming a mask for forming a film body having fine holes according to claim 10, wherein the underlayer is made of an insulating material.   The method for forming a mask for forming a film body having micropores according to any one of claims 10 to 14, wherein the film body is made of a metal material. A predetermined substrate;
A patterning mask having fine pores of 10 nm to 100 nm formed on the substrate and exhibiting a two-layer structure;
A film body forming mask having micropores, characterized by comprising:   The mask for forming a film body having fine holes according to claim 16, wherein an upper layer portion of the patterning mask is made of a metal material.   18. The mask for forming a film body having fine holes according to claim 16, wherein a lower layer portion of the patterning mask is made of an insulating material.

Images