JP2005142368A - Plasma treatment device - Google Patents

Plasma treatment device Download PDF

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JP2005142368A
JP2005142368A JP2003377385A JP2003377385A JP2005142368A JP 2005142368 A JP2005142368 A JP 2005142368A JP 2003377385 A JP2003377385 A JP 2003377385A JP 2003377385 A JP2003377385 A JP 2003377385A JP 2005142368 A JP2005142368 A JP 2005142368A
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electrode
frame
holder
annular
covering portion
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JP3574654B1 (en
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Mitsuhide Nogami
光秀 野上
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Sekisui Chemical Co Ltd
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Sekisui Chemical Co Ltd
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Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Priority to CNA2007101692391A priority patent/CN101146398A/en
Priority to EP04717310A priority patent/EP1610368A4/en
Priority to CA002517133A priority patent/CA2517133A1/en
Priority to US10/547,078 priority patent/US7332039B2/en
Priority to KR1020077016917A priority patent/KR100814584B1/en
Priority to PCT/JP2004/002724 priority patent/WO2004079811A1/en
Priority to CN2007101692404A priority patent/CN101145508B/en
Priority to CNB2007101692387A priority patent/CN100511583C/en
Priority to KR1020057016513A priority patent/KR100779814B1/en
Priority to CNB2004800061809A priority patent/CN100375246C/en
Priority to TW093105871A priority patent/TWI260037B/en
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Publication of JP3574654B1 publication Critical patent/JP3574654B1/en
Publication of JP2005142368A publication Critical patent/JP2005142368A/en
Priority to US11/932,399 priority patent/US20080295965A1/en
Priority to US11/932,330 priority patent/US8262846B2/en
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a small-sized plasma treatment device that is free from corrosion. <P>SOLUTION: The plasma treatment device is provided with an annular inner electric field impressing element 11, an outer ground electrode 21, and an insulating holder 30. The device is also provided with a metallic frame 40. The holder 30 comprises a work-side coating section 31, an opposite-side coating section 32, and an inner peripheral-side coating section 33. The frame 40 comprises a work-side coating section 41, an opposite-side coating section 42, and an inner peripheral-side coating section 43. The frame 40 also comprises an outer peripheral-side coating section 44. The coating section 44 is adapted to face the electrode 21 without interposing any insulating material and has an exhaust tube 83 which is passed through the section 44 in the axial direction and made of a corrosion-resistant resin. A process gas flowing through the gas passages 50 of the electrodes 11 and 21 is ionized to produce plasma and blown out toward the outer edge of a work W from the annular outlet port 71 of the coating section 31. By-products and the process gas are discharged through an exhaust passage 82 and the exhaust tube 83 from the annular inlet port 81 of the coating section 41. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

この発明は、ワークに対して環状に表面処理を行なうプラズマ処理装置に関する。   The present invention relates to a plasma processing apparatus that performs surface treatment on a workpiece in an annular shape.

例えば、スピンコーターで原料塗布により円盤形状の半導体ウエハー(ワーク)に膜(例えばフォトレジスト)を形成する場合、半導体ウエハーを回転させながら中心部に原料液を滴下し、遠心力で上面の全域に行き渡らせる。これによって、ウエハーの上面の外縁部にまで膜が形成される。この膜を外縁部まで残しておくと、その後の工程で外縁部の把持の際にパーティクル発生の原因となる。そこで、上記成膜工程の後で除去する工程が実行される。   For example, when a film (eg, photoresist) is formed on a disk-shaped semiconductor wafer (work) by applying a raw material with a spin coater, the raw material liquid is dropped at the center while rotating the semiconductor wafer, and the entire area of the upper surface is applied by centrifugal force. Spread. As a result, a film is formed up to the outer edge portion of the upper surface of the wafer. If this film is left up to the outer edge, particles will be generated when the outer edge is gripped in subsequent steps. Therefore, a removal step is performed after the film formation step.

上記のようなウエハーの膜の外縁部を除去するために、例えば特許文献1のプラズマ処理装置が提案されている。このプラズマ処理装置は、環状をなす電極間に電界を印加して電極間を通る処理ガスをプラズマ化し、このプラズマ化された処理ガスをウエハーの外縁部に吹き付け、エッチングにより膜の外縁部を除去していた。   In order to remove the outer edge portion of the wafer film as described above, for example, a plasma processing apparatus of Patent Document 1 has been proposed. In this plasma processing apparatus, an electric field is applied between the annular electrodes to convert the processing gas passing between the electrodes into plasma, this plasmaized processing gas is sprayed onto the outer edge of the wafer, and the outer edge of the film is removed by etching. Was.

ところで、処理ガスおよびエッチングにより生じた副生成物膜は、滞留するとウエハーの他の領域に悪影響を起こすため、速やかに排除する必要がある。そこで、特許文献1の装置では、上述した処理ガス吹き付け手段とは別体をなして排気手段を装備している。この排気手段は、ウエハーの外周縁に近接して設けられた環状の吸い込み口を有し、この吸い込み口から上記処理ガスや副生成物を吸引排気している。
特開平8−279494号公報
By the way, the by-product film generated by the processing gas and etching causes an adverse effect on other regions of the wafer, and thus needs to be quickly removed. In view of this, the apparatus of Patent Document 1 is equipped with an exhaust means that is separate from the above-described process gas spraying means. The exhaust means has an annular suction port provided close to the outer peripheral edge of the wafer, and the processing gas and by-products are sucked and exhausted from the suction port.
JP-A-8-279494

しかし、上記特許文献1の装置は、プラズマ化された処理ガスを吹き付ける手段と、排気を行なう手段が、別々に装備されているため、装置が複雑かつ大型化する欠点があった。   However, the apparatus of Patent Document 1 has a drawback that the apparatus is complicated and large because the means for blowing the plasma-ized processing gas and the means for exhausting are separately provided.

そこで、本出願人は、上記2つの手段を1つのユニットに組み込んだプラズマ処理装置を開発した(特願2002−352847)。この装置は、環状の内側電極と、この内側電極の径方向外側に同心をなして配置された環状の外側電極と、これら電極を全周にわたって覆う絶縁性のホルダと、このホルダを全周にわたって覆う金属製フレームとを有している。この金属製フレームは電極およびホルダを収容,保持するとともに、漏電を防止する役割も担っている。   Therefore, the present applicant has developed a plasma processing apparatus in which the above two means are incorporated in one unit (Japanese Patent Application No. 2002-352847). This device includes an annular inner electrode, an annular outer electrode arranged concentrically on the radially outer side of the inner electrode, an insulating holder that covers these electrodes over the entire circumference, and the holder over the entire circumference. And a metal frame for covering. The metal frame accommodates and holds the electrode and the holder, and also plays a role of preventing leakage.

上記内側電極の外周面と外側電極の内周面との環状の隙間がガス通路として提供され、これら電極間に印加される電界により、上記ガス通路を流れる処理ガスがプラズマ化される。上記ホルダのワーク側の被覆部には、上記ガス通路に連なる環状の吹き出し口が形成されており、この吹き出し口からワークに向かって上記プラズマ化した処理ガスが吹き出す。上記フレームのワーク側の被覆部には、この吹き出し口に対応した位置において環状の吸い込み口が形成されている。また、上記ホルダおよびフレームには上記吸い込み口を吸引手段に連ねる排気通路が形成されている。そして、ワーク表面処理に伴って生成された副生成物と処理ガスは、吸い込み口から排気通路を経て吸引手段へと排気されるようになっている。   An annular gap between the outer peripheral surface of the inner electrode and the inner peripheral surface of the outer electrode is provided as a gas passage, and the processing gas flowing through the gas passage is turned into plasma by an electric field applied between these electrodes. An annular blowing port connected to the gas passage is formed in the workpiece-side covering portion of the holder, and the plasma-ized processing gas blows out from the blowing port toward the workpiece. An annular suction port is formed at a position corresponding to the blowing port in the covering portion on the work side of the frame. The holder and the frame are formed with an exhaust passage that connects the suction port to the suction means. And the by-product and process gas produced | generated with the workpiece | work surface treatment are exhausted to a suction means through an exhaust passage from a suction inlet.

しかし、上記出願中の装置では、吸い込まれた処理ガスおよび副生成物がフレームの貫通孔からなる排気通路を通る際にその内周を腐蝕させる不都合があった。この不都合を防ぐために耐腐蝕性の金属を用いるとコスト高となってしまい、改良の余地があった。   However, in the apparatus of the above-mentioned application, when the sucked processing gas and by-products pass through the exhaust passage formed by the through hole of the frame, there is a problem that the inner periphery is corroded. If a corrosion-resistant metal is used to prevent this inconvenience, the cost becomes high and there is room for improvement.

本発明は上記課題を解決するためになされたもので、環状をなす内側電極と、この内側電極と同心をなして径方向外側に配置された環状の外側電極と、これら内側電極と外側電極をその全周にわたって覆う絶縁性のホルダと、このホルダをその全周にわたって覆う金属製のフレームとを備え、
上記内側電極の外周面と外側電極の内周面との環状の隙間がガス通路として提供され、これら電極間に印加される電界により、上記ガス通路を流れる処理ガスがプラズマ化されるようになっており、
上記ホルダのワーク側の被覆部には、上記ガス通路に連なる環状の吹き出し口が形成され、この吹き出し口からワークに向かって上記プラズマ化した処理ガスが吹き出すようになっており、
上記フレームのワーク側の被覆部には、この吹き出し口に対応した位置において環状の吸い込み口が形成され、少なくとも上記フレームには上記吸い込み口を吸引手段に連ねる排気通路が形成され、これにより、上記プラズマ化された処理ガスによるワーク表面処理に伴って生成された副生成物と処理ガスが吸い込み口から排気通路を経て吸引手段へと排気されるようになっており、
上記排気通路が、上記フレームを挿通する耐腐蝕樹脂製の排気チューブを有していることを特徴とする。
The present invention has been made to solve the above-described problems. An inner electrode having a ring shape, an outer electrode having a ring shape concentric with the inner electrode and disposed radially outside, and the inner electrode and the outer electrode are provided. An insulating holder that covers the entire circumference, and a metal frame that covers the entire circumference of the holder,
An annular gap between the outer peripheral surface of the inner electrode and the inner peripheral surface of the outer electrode is provided as a gas passage, and the processing gas flowing in the gas passage is turned into plasma by an electric field applied between these electrodes. And
An annular blowing port connected to the gas passage is formed in the workpiece-side covering portion of the holder, and the plasma-treated processing gas blows out from the blowing port toward the workpiece,
An annular suction port is formed at a position corresponding to the blow-out port in the work portion side cover of the frame, and at least the frame is formed with an exhaust passage connecting the suction port to the suction means. By-products and processing gas generated along with the workpiece surface treatment with plasmaized processing gas are exhausted from the suction port to the suction means through the exhaust passage,
The exhaust passage has an exhaust tube made of a corrosion-resistant resin that passes through the frame.

上記構成によれば、処理ガスをプラズマ化して吹き出す手段と、副生成物および処理ガスを吸引して排気する手段を1つのユニットに組み込むことができるので、構成が簡単である。また、耐腐蝕樹脂製の排気チューブで金属製フレームにおける排気通路を形成しているので、低コストでフレームの腐蝕を回避することができる。   According to the above configuration, the means for converting the processing gas into plasma and blowing it out and the means for sucking and exhausting the by-product and the processing gas can be incorporated into one unit, so that the configuration is simple. Further, since the exhaust passage in the metal frame is formed by the exhaust tube made of the corrosion resistant resin, the corrosion of the frame can be avoided at a low cost.

好ましくは、上記フレームは筒状をなす外周側の被覆部を有し、この外周側被覆部に、上記排気チューブが軸方向に貫通している。これによれば、排気をワークとは反対側に導くことができる。しかも、フレームの外周側の被覆部は金属製であるので比較的薄肉であっても排気チューブを貫通して排気通路を形成することができるので、装置の小径化を図ることができる。   Preferably, the frame has a cylindrical outer cover portion, and the exhaust tube penetrates the outer cover portion in the axial direction. According to this, exhaust can be led to the opposite side to a work. In addition, since the covering portion on the outer peripheral side of the frame is made of metal, the exhaust passage can be formed through the exhaust tube even if it is relatively thin, so that the diameter of the apparatus can be reduced.

好ましくは、上記内側電極が電界印加電極となり外側電極が接地電極となり、上記ホルダはさらに、ワークの反対側の被覆部と、上記内側電極を覆う筒状の被覆部とを有し、上記フレームはさらに、ワークの反対側の被覆部と、ホルダの筒状の被覆部を覆う筒状の内周側被覆部とを有し、上記フレームの外周側被覆部は、絶縁材料を介さずに上記外側電極と対向していることを特徴とする。これによれば、外側電極とプレームの間に絶縁材料を介在させないので、より一層装置の小径化を図ることができる。なお外側電極は接地電極であるので、漏電等の不都合が生じることはない。   Preferably, the inner electrode serves as an electric field application electrode and the outer electrode serves as a ground electrode, and the holder further includes a covering portion on the opposite side of the work and a cylindrical covering portion covering the inner electrode, and the frame is Furthermore, it has a covering part on the opposite side of the workpiece and a cylindrical inner peripheral side covering part that covers the cylindrical covering part of the holder, and the outer peripheral side covering part of the frame does not pass through the insulating material, It is characterized by facing the electrode. According to this, since the insulating material is not interposed between the outer electrode and the plate, the diameter of the device can be further reduced. Since the outer electrode is a ground electrode, inconvenience such as electric leakage does not occur.

好ましくは、上記フレームのワーク側被覆部は耐腐蝕性の金属からなり、この被覆部と上記ホルダのワーク側被覆部との間には隙間が形成され、この隙間が上記吸い込み口と上記排気チューブとを連ねる排気通路として提供される。これによれば、上記外周側の排気チューブと吸い込み口とを簡単な構成で連ねることができる。   Preferably, the work side covering portion of the frame is made of a corrosion-resistant metal, and a gap is formed between the covering portion and the work side covering portion of the holder, and the gap is formed between the suction port and the exhaust tube. Provided as an exhaust passage. According to this, the exhaust tube and the suction port on the outer peripheral side can be connected with a simple configuration.

本発明によれば、環状に表面処理するプラズマ処理装置の構成を簡略化することができ、しかも排気通路を形成した金属製フレームの腐蝕を低コストで回避することができる。   According to the present invention, it is possible to simplify the configuration of a plasma processing apparatus that performs surface treatment in an annular shape, and to avoid corrosion of a metal frame having an exhaust passage at low cost.

以下、本発明の実施形態を図面にしたがって説明する。図1および図2は、半導体ウェハーW(ワーク)を処理対象とする常圧プラズマエッチング装置M(プラズマ処理装置)を示す。はじめにウェハーWについて説明する。ウェハーWは、シリコンなどの半導体によって円盤形状に形成されている。ウェハーWの上面には、例えばスピンコーターによってフォトレジストなどの膜Waが形成されている。この膜Waは、ウェハーWの上面の全体を覆い、外縁にまで及んでいる。この膜Waの外縁部Wa’を残しておくと、その後の研磨工程で邪魔になったり外縁を把持する工程でパーティクル発生の原因になったりする。そこで、ウェハーWは、上記成膜工程の次に常圧プラズマエッチング装置へ送られ、外縁部Wa’のエッチング工程に付される。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1 and 2 show an atmospheric pressure plasma etching apparatus M (plasma processing apparatus) for processing a semiconductor wafer W (work). First, the wafer W will be described. The wafer W is formed in a disk shape by a semiconductor such as silicon. On the upper surface of the wafer W, a film Wa such as a photoresist is formed by, for example, a spin coater. The film Wa covers the entire upper surface of the wafer W and extends to the outer edge. If the outer edge portion Wa 'of the film Wa is left, it may become a hindrance in the subsequent polishing step or cause particles to be generated in the step of gripping the outer edge. Therefore, the wafer W is sent to the atmospheric pressure plasma etching apparatus after the film forming process and is subjected to the etching process of the outer edge Wa ′.

図1および図2に示すように、常圧プラズマエッチング装置Mは、平面視環状のノズルヘッド1と、パルス電源60(電界印加手段)と、処理ガス源70と、吸引ポンプ80(吸引手段)と、冷媒源90(温調媒体源)と、を備えている。ノズルヘッド1は、内側電極構造10と、外側電極構造20と、これら電極構造10,20を覆う絶縁性のホルダ30と、このホルダ30を覆う金属製(導電性)のフレーム40とを備えている。これら構成要素10,20,30,40は全て環状をなしている。   As shown in FIGS. 1 and 2, the atmospheric pressure plasma etching apparatus M includes a nozzle head 1 that is annular in plan view, a pulse power source 60 (electric field applying means), a processing gas source 70, and a suction pump 80 (suction means). And a refrigerant source 90 (temperature control medium source). The nozzle head 1 includes an inner electrode structure 10, an outer electrode structure 20, an insulating holder 30 that covers the electrode structures 10 and 20, and a metal (conductive) frame 40 that covers the holder 30. Yes. These components 10, 20, 30, and 40 are all ring-shaped.

内側電極構造10は、環状の電極11(内側電極)と、この電極11の径方向内側に同心をなして配置された環状の金属製の通路形成部材15を備えており、両者の間に媒体通路17が形成されている。外側電極構造20は、内側電極構造10より大径をなし、その径方向外側に同心をなして配置されている。外側電極構造20も環状の電極21(外側電極)と、この電極21の径方向内側に同心をなして配置された環状の金属製の通路形成部材25を備えており、両者の間に媒体通路27が形成されている。電極21の内周面と電極11の外周面との間には環状の隙間50が形成されている。この隙間50は処理ガスのためのガス通路となる。なお、電極11の外周面と電極21の内周面には、それぞれ固体誘電体が溶射にて被膜されている。   The inner electrode structure 10 includes an annular electrode 11 (inner electrode) and an annular metal passage forming member 15 arranged concentrically on the inner side in the radial direction of the electrode 11. A passage 17 is formed. The outer electrode structure 20 has a larger diameter than the inner electrode structure 10 and is disposed concentrically on the outer side in the radial direction. The outer electrode structure 20 also includes an annular electrode 21 (outer electrode) and an annular metal passage forming member 25 arranged concentrically on the radially inner side of the electrode 21, and a medium passage between the two. 27 is formed. An annular gap 50 is formed between the inner peripheral surface of the electrode 21 and the outer peripheral surface of the electrode 11. The gap 50 becomes a gas passage for the processing gas. A solid dielectric is coated on the outer peripheral surface of the electrode 11 and the inner peripheral surface of the electrode 21 by thermal spraying.

上記ホルダ30は、略水平をなす底板31(ワーク側の被覆部)と、略水平をなす天板32(ワークの反対側の被覆部)と、それらの内周部間に挟まれた筒33(筒状の被覆部)と、環状のリング部材34とを有している。これら部材は例えばポリテトラフルオロエチレン(耐腐蝕性樹脂)等の絶縁材料からなる。リング部材34は、電極11,21の上端面と通路形成部材15,25の段差により形成された空間に嵌っている。底板31と天板32とで電極構造10,20およびリング部材34を挟んでいる。筒33は内側電極構造10の通路形成部材15の内周に接してこれを支持している。底板31は外側と内側に分割されている。   The holder 30 includes a substantially horizontal bottom plate 31 (covering portion on the workpiece side), a substantially horizontal top plate 32 (covering portion on the opposite side of the workpiece), and a cylinder 33 sandwiched between the inner peripheral portions thereof. (Cylindrical covering portion) and an annular ring member 34 are provided. These members are made of an insulating material such as polytetrafluoroethylene (corrosion resistant resin). The ring member 34 is fitted in a space formed by the step between the upper end surfaces of the electrodes 11 and 21 and the passage forming members 15 and 25. The bottom plate 31 and the top plate 32 sandwich the electrode structures 10 and 20 and the ring member 34. The cylinder 33 is in contact with and supports the inner periphery of the passage forming member 15 of the inner electrode structure 10. The bottom plate 31 is divided into an outer side and an inner side.

上記ホルダ30を囲んで支持するフレーム40は、略水平をなす底板41(ワーク側被覆部)と、略水平をなす天板42(ワークの反対側の被覆部)と、それらの間に挟まれてボルト等で連結された内筒43(筒状をなす内周側の被覆部)および外筒44(筒状をなす外周側の被覆部)とを有している。これら部材41〜44はアルミ,ステンレス等の金属からなる。底板41はホルダ30の底板31を放射状に等間隔に配置されたスペーサ49を介して押さえている。天板42はホルダ30の天板32を押さえている。内筒43は、ホルダ30の筒33および天板32の内周を押さえている。外筒44は、電極21,通路形成部材25,天板32の外周に接し、これを押さえている。外筒44と電極21との間には、絶縁材料からなる部材が介在されていない。天板42は図示しない架台に固定されており、これによりノズルヘッド1が支持されている。なお、底板41は耐腐食性金属(例えば商品名ハステロイ)からなり、内側と外側に分割されており、その下面には絶縁材料からなる薄いプレート45がそれぞれ取り付けられている。   The frame 40 that surrounds and supports the holder 30 is sandwiched between a bottom plate 41 (work-side covering portion) that is substantially horizontal and a top plate 42 (covering portion on the opposite side of the workpiece) that is substantially horizontal. And an outer cylinder 44 (a cylindrical outer covering portion) and an inner cylinder 43 (a cylindrical inner covering portion) and an outer cylinder 44 connected by bolts or the like. These members 41 to 44 are made of a metal such as aluminum or stainless steel. The bottom plate 41 holds the bottom plate 31 of the holder 30 through spacers 49 that are radially arranged at equal intervals. The top plate 42 holds the top plate 32 of the holder 30. The inner cylinder 43 holds down the inner periphery of the cylinder 33 of the holder 30 and the top plate 32. The outer cylinder 44 is in contact with the outer periphery of the electrode 21, the passage forming member 25, and the top plate 32 to hold it. A member made of an insulating material is not interposed between the outer cylinder 44 and the electrode 21. The top plate 42 is fixed to a gantry (not shown), whereby the nozzle head 1 is supported. The bottom plate 41 is made of a corrosion-resistant metal (for example, trade name Hastelloy), divided into an inner side and an outer side, and a thin plate 45 made of an insulating material is attached to the lower surface thereof.

図2に示すように、フレーム40の天板42には、絶縁筒61を介して接続端子62が貫通して設けられており、この接続端子62の下端は通路形成部材15の上端に接続されている。接続端子62には給電線63を介してパルス電源60が接続されている。これにより、電極11がパルス電源60に接続されて電界印加電極(ホット電極)となる。また、電極21は通路形成部材25およびフレーム40を介して接地されており、これにより接地電極(アース電極)となっている。   As shown in FIG. 2, a connection terminal 62 is provided through the top plate 42 of the frame 40 through an insulating cylinder 61, and the lower end of the connection terminal 62 is connected to the upper end of the passage forming member 15. ing. A pulse power supply 60 is connected to the connection terminal 62 via a feed line 63. Thereby, the electrode 11 is connected to the pulse power source 60 and becomes an electric field application electrode (hot electrode). In addition, the electrode 21 is grounded via the passage forming member 25 and the frame 40, thereby forming a ground electrode (ground electrode).

図1に示すように、底板31の外側と内側に分割された部材間には、環状の吹き出し口71が形成されている。この吹き出し口71の上端は電極11,21間のガス通路50に連なり、その下端は底板31の下面に形成された山形の環状凸部31aで開口している。他方、フレーム40の天板42には周方向に等間隔をおいて複数の継手72が取り付けられている。継手72は天板32,42およびリング部材34に形成された孔73(供給通路)およびリング部材34に形成された環状のスリット74(供給通路)を介して電極11,21間のガス通路50の上端に連なっている。この継手72には供給管75を介して処理ガス源70が接続されている。処理ガス源70には、エッチング用ガスとして例えばCFが貯えられている。 As shown in FIG. 1, an annular blowing port 71 is formed between members divided into the outside and the inside of the bottom plate 31. The upper end of the outlet 71 is connected to the gas passage 50 between the electrodes 11 and 21, and the lower end thereof is opened by a mountain-shaped annular protrusion 31 a formed on the lower surface of the bottom plate 31. On the other hand, a plurality of joints 72 are attached to the top plate 42 of the frame 40 at equal intervals in the circumferential direction. The joint 72 has a gas passage 50 between the electrodes 11 and 21 through a hole 73 (supply passage) formed in the top plates 32 and 42 and the ring member 34 and an annular slit 74 (supply passage) formed in the ring member 34. It is connected to the upper end of. A processing gas source 70 is connected to the joint 72 via a supply pipe 75. For example, CF 4 is stored in the processing gas source 70 as an etching gas.

図3に最も良く示されているように、上記底板41の内側と外側に分割された部材間には、上記環状凸部31aの斜面に対応したテーパをなす環状の吸い込み口81が形成されている。この吸い込み口81は、前述した吹き出し口71の真下に位置してこれより幅広をなしており、底板31,41間の隙間からなる排気通路82に連なっている。また、フレーム40の外筒44には周方向に等間隔をおいて複数のポリテトラフルオロエチレン等の耐腐蝕性樹脂からなる排気チューブ83(排気通路)が貫通している。これら排気チューブ83の下端は底板31に形成された貫通孔84を介して上記排気通路82に連なっている。この排気チューブ83の上端部は天板42に設置された継手85に挿入接続されている。   As best shown in FIG. 3, an annular suction port 81 having a taper corresponding to the inclined surface of the annular convex portion 31a is formed between members divided into the inner side and the outer side of the bottom plate 41. Yes. The suction port 81 is located directly below the blowing port 71 and has a width wider than that, and is connected to an exhaust passage 82 formed by a gap between the bottom plates 31 and 41. Further, an exhaust tube 83 (exhaust passage) made of a plurality of corrosion-resistant resins such as polytetrafluoroethylene passes through the outer cylinder 44 of the frame 40 at equal intervals in the circumferential direction. The lower ends of these exhaust tubes 83 are connected to the exhaust passage 82 via through holes 84 formed in the bottom plate 31. The upper end of the exhaust tube 83 is inserted and connected to a joint 85 installed on the top plate 42.

また、ホルダ30の筒33および天板32には、周方向に等間隔をおいて複数のポリテトラフルオロエチレン等の耐腐蝕性樹脂からなる排気チューブ86(排気通路)が貫通している。これら排気チューブ86の下端は底板31に形成された貫通孔87を介して上記排気通路82に連なっている。この排気チューブ86の上端部は天板42に設置された継手88に挿入接続されている。上記継手85,88は、耐腐蝕製樹脂からなる吸引管89を介して吸引ポンプ80に接続されている。   A plurality of exhaust tubes 86 (exhaust passages) made of a corrosion-resistant resin such as polytetrafluoroethylene pass through the cylinder 33 and the top plate 32 of the holder 30 at equal intervals in the circumferential direction. The lower ends of these exhaust tubes 86 are connected to the exhaust passage 82 through through holes 87 formed in the bottom plate 31. The upper end portion of the exhaust tube 86 is inserted and connected to a joint 88 installed on the top plate 42. The joints 85 and 88 are connected to the suction pump 80 via a suction pipe 89 made of a corrosion-resistant resin.

上記天板42には入口側継手91と出口側継手92が取り付けられている。入口側継手91は冷媒供給管93を介して冷媒源90(温調媒体源)に接続されている。冷媒(温調媒体)としては例えば水が用いられ、冷媒源90は給水ポンプからなる。入口側継手91は天板42,32および通路形成部材15に形成された貫通孔94を介して内側電極構造10の媒体通路17に連なっている。また、出口側継手92には排水チューブ95が接続されている。出口側継手92は、天板42,32および通路形成部材25に形成された貫通孔96を介して外側電極構造20の媒体通路27に連なっている。さらに天板42には、上記継手91,92とほぼ180°離れた位置において、2つの中継継手(図示しない)が取り付けられている。これら中継継手同士は中継チューブ(図示しない)により接続されている。これら中継継手は、上記継手91,92と同様にして、内側電極構造10の媒体通路17と外側電極構造20の媒体通路27にそれぞれ連なっている。   An inlet side joint 91 and an outlet side joint 92 are attached to the top plate 42. The inlet side joint 91 is connected to a refrigerant source 90 (temperature control medium source) via a refrigerant supply pipe 93. For example, water is used as the refrigerant (temperature control medium), and the refrigerant source 90 includes a water supply pump. The inlet-side joint 91 is connected to the medium passage 17 of the inner electrode structure 10 through the top plates 42 and 32 and the through holes 94 formed in the passage forming member 15. A drainage tube 95 is connected to the outlet side joint 92. The outlet side joint 92 is connected to the medium passage 27 of the outer electrode structure 20 through the top plates 42 and 32 and the through holes 96 formed in the passage forming member 25. Further, two relay joints (not shown) are attached to the top plate 42 at a position approximately 180 ° away from the joints 91 and 92. These relay joints are connected by a relay tube (not shown). These relay joints are connected to the medium passage 17 of the inner electrode structure 10 and the medium passage 27 of the outer electrode structure 20 in the same manner as the joints 91 and 92 described above.

上記のように構成された常圧プラズマエッチング装置Mの動作を説明する。ノズルヘッド1の下方に処理対象のウェハーWをセットする。このとき、ノズルヘッド1の中心軸線とウェハーWの中心が一致するようにする。これによって、環状吹き出し口71の真下に、ウェハーWの外縁部が位置されることになる。   The operation of the atmospheric pressure plasma etching apparatus M configured as described above will be described. A wafer W to be processed is set below the nozzle head 1. At this time, the center axis of the nozzle head 1 and the center of the wafer W are made to coincide. As a result, the outer edge portion of the wafer W is positioned directly below the annular outlet 71.

次に、処理ガス源70からの処理ガスを、供給管75,継手72,孔73,環状スリット74を介してガス通路50(環状プラズマ化空間)の全周に均一に導入する。併行して、パルス電源60からパルス電圧を所定周波数で出力する。このパルス電圧は、給電線63,接続端子62および通路形成部材15を介して電極11に印加される。これにより、電極11,21間のガス通路50にパルス電界が形成され、この電界によってガス通路10aを通る処理ガスをプラズマ化することができる。このプラズマ化された処理ガスが、環状吹き出し口71の全周から吹出され、ウェハーWの外縁の全周に吹き付けられる。これによって、ウェハーWの膜Waの外縁部Wa’を全周にわたって一度にエッチングすることができる。   Next, the processing gas from the processing gas source 70 is uniformly introduced to the entire circumference of the gas passage 50 (annular plasma space) through the supply pipe 75, the joint 72, the hole 73, and the annular slit 74. In parallel, a pulse voltage is output from the pulse power supply 60 at a predetermined frequency. This pulse voltage is applied to the electrode 11 through the power supply line 63, the connection terminal 62 and the passage forming member 15. Thereby, a pulse electric field is formed in the gas passage 50 between the electrodes 11 and 21, and the processing gas passing through the gas passage 10a can be turned into plasma by this electric field. This plasma-ized processing gas is blown out from the entire circumference of the annular blow-out port 71 and blown around the entire circumference of the outer edge of the wafer W. As a result, the outer edge Wa ′ of the film Wa of the wafer W can be etched all at once over the entire circumference.

上記処理ガスの吹き出しと同時に吸引ポンプ80を駆動する。これによって上記吹き出し流を囲むようにしてその直近に上向きの吸い込み流が形成され、処理ガスやエッチングにより生じた副生成物が、ウエハーWに沿って外縁部Wa’より内側に流れるのを防止でき、処理対象外の膜Waを保護することができる。エッチング後の処理ガスや副生成物は、吸い込み口81に吸い込まれ、排気通路82,排気チューブ83,86,吸引チューブ89を経て排気される。   The suction pump 80 is driven simultaneously with the blowing of the processing gas. As a result, an upward suction flow is formed in the immediate vicinity so as to surround the blowing flow, and by-products generated by processing gas and etching can be prevented from flowing inward from the outer edge Wa ′ along the wafer W. The non-target film Wa can be protected. Process gas and by-products after etching are sucked into the suction port 81 and exhausted through the exhaust passage 82, the exhaust tubes 83 and 86, and the suction tube 89.

また、冷媒源90の冷媒を供給管93,入口側継手91,貫通孔94を経て内側電極構造10の媒体通路17に送り込む。この冷媒は2手に分かれて媒体通路17内を流れ、ほぼ180°離れた中継継手および中継チューブを経て外側電極構造20の媒体通路27に流れ込み、さらに2手に分かれて媒体通路27を流れ、最後に貫通孔96,出口側継手92を経、排水チューブ95から排出される。上記のように、媒体通路17,27内を流れる過程で、放電により発熱した電極11,21を冷却し、所定の温度範囲になるように調節する。   Further, the refrigerant of the refrigerant source 90 is sent to the medium passage 17 of the inner electrode structure 10 through the supply pipe 93, the inlet side joint 91, and the through hole 94. This refrigerant is divided into two hands and flows in the medium passage 17, flows into the medium passage 27 of the outer electrode structure 20 through a relay joint and a relay tube separated by about 180 °, and further flows into the medium passage 27 in two hands. Finally, the water is discharged from the drain tube 95 through the through hole 96 and the outlet side joint 92. As described above, in the process of flowing through the medium passages 17 and 27, the electrodes 11 and 21 generated by the discharge are cooled and adjusted so as to be in a predetermined temperature range.

上記処理ガスおよび副生成物は、金属を腐蝕させる性質を有するが、排気通路82を形成する金属製の底板41は、耐腐蝕性の金属からなるので、腐蝕を免れる。また、外筒部44の排気通路は耐腐蝕樹脂製の排気チューブ83により形成されているので、外筒部44の腐蝕も回避することができる。外筒部44の排気通路は軸方向に延びる貫通孔に排気チューブ83を挿通させるだけであるから、低コストで耐腐蝕性を得ることができる。   The processing gas and the by-product have a property of corroding metal, but the metal bottom plate 41 forming the exhaust passage 82 is made of a corrosion-resistant metal, so that corrosion is avoided. Further, since the exhaust passage of the outer cylinder portion 44 is formed by the exhaust tube 83 made of corrosion-resistant resin, corrosion of the outer cylinder portion 44 can be avoided. Since the exhaust passage of the outer cylinder portion 44 is simply inserted through the exhaust tube 83 through a through hole extending in the axial direction, corrosion resistance can be obtained at a low cost.

本実施形態では、接続端子61,継手72,85,88,91,92をフレーム40の天板42に設置しており、電源80,処理ガス源70,吸引ポンプ80,冷媒源90への接続構造を簡略化することができる。
また、上記フレーム40の外筒44と外側電極構造20との間には絶縁材料からなる構成部材(ホルダ30の外筒に相当する部材)が介在されていないので、ヘッド1の外径を小さくすることができる。上記のように継手85が天板42にあるので、外周側の排気通路を外筒44に形成することを余儀なくされるが、上記のように排気チューブ83を用いることにより不都合は生じない。
In the present embodiment, the connection terminal 61 and the joints 72, 85, 88, 91, 92 are installed on the top plate 42 of the frame 40, and are connected to the power source 80, the processing gas source 70, the suction pump 80, and the refrigerant source 90. The structure can be simplified.
Further, since no constituent member (a member corresponding to the outer cylinder of the holder 30) made of an insulating material is interposed between the outer cylinder 44 of the frame 40 and the outer electrode structure 20, the outer diameter of the head 1 is reduced. can do. Since the joint 85 is on the top plate 42 as described above, it is necessary to form the outer peripheral exhaust passage in the outer cylinder 44, but there is no inconvenience caused by using the exhaust tube 83 as described above.

本発明は、上記実施形態に限定されず、種々の形態を採用可能である。例えば、本発明は、エッチングに限られず、洗浄や成膜などの他のプラズマ表面処理にも適用できる。また、常圧下に限らず、減圧下でのプラズマ表面処理にも適用できる。   The present invention is not limited to the above embodiment, and various forms can be adopted. For example, the present invention is not limited to etching, and can be applied to other plasma surface treatments such as cleaning and film formation. Further, the present invention can be applied not only to normal pressure but also to plasma surface treatment under reduced pressure.

本発明の一実施形態に係る常圧プラズマエッチング装置のノズルヘッドの縦断面図である。It is a longitudinal cross-sectional view of the nozzle head of the atmospheric pressure plasma etching apparatus which concerns on one Embodiment of this invention. 上記ノズルヘッドを図1とは異なる位置で縦断面にした図である。It is the figure which made the said nozzle head the longitudinal cross-section in the position different from FIG. 同ノズルヘッドの排気通路の構造を示す拡大縦断面図である。It is an enlarged longitudinal cross-sectional view which shows the structure of the exhaust passage of the nozzle head.

符号の説明Explanation of symbols

11 内側構造(電界印加電極)
21 外側電極(接地電極)
30 ホルダ
31 底板(ワーク側被覆部)
32 天板(ワークの反対側の被覆部)
33 筒(筒状の被覆部)
40 フレーム
41 底板(ワーク側被覆部)
42 天板(ワークの反対側の被覆部)
43 内筒(筒状の内周側被覆部)
44 外筒(筒状の外周側被覆部)
50 ガス通路
71 吹き出し口
81 吸い込み口
82 排気通路
83 排気チューブ(排気通路)
80 吸引ポンプ(吸引手段)
11 Inner structure (electric field application electrode)
21 Outer electrode (ground electrode)
30 Holder 31 Bottom plate (workpiece side coating)
32 Top plate (covering part on the opposite side of the workpiece)
33 cylinder (cylindrical covering part)
40 Frame 41 Bottom plate (work side coating)
42 Top plate (covering part on the opposite side of the workpiece)
43 Inner cylinder (cylindrical inner periphery side covering part)
44 Outer cylinder (cylindrical outer peripheral side covering part)
50 Gas passage 71 Outlet 81 Suction port 82 Exhaust passage 83 Exhaust tube (exhaust passage)
80 Suction pump (suction means)

Claims (4)

環状をなす内側電極と、この内側電極と同心をなして径方向外側に配置された環状の外側電極と、これら内側電極と外側電極をその全周にわたって覆う絶縁性のホルダと、このホルダをその全周にわたって覆う金属製のフレームとを備え、
上記内側電極の外周面と外側電極の内周面との環状の隙間がガス通路として提供され、これら電極間に印加される電界により、上記ガス通路を流れる処理ガスがプラズマ化されるようになっており、
上記ホルダのワーク側の被覆部には、上記ガス通路に連なる環状の吹き出し口が形成され、この吹き出し口からワークに向かって上記プラズマ化した処理ガスが吹き出すようになっており、
上記フレームのワーク側の被覆部には、この吹き出し口に対応した位置において環状の吸い込み口が形成され、少なくとも上記フレームには上記吸い込み口を吸引手段に連ねる排気通路が形成され、これにより、上記プラズマ化された処理ガスによるワーク表面処理に伴って生成された副生成物と処理ガスが吸い込み口から排気通路を経て吸引手段へと排気されるようになっており、
上記排気通路が、上記フレームを挿通する耐腐蝕樹脂製の排気チューブを有していることを特徴とするプラズマ処理装置。
An annular inner electrode, an annular outer electrode concentric with the inner electrode and disposed radially outward, an insulating holder covering the inner electrode and the outer electrode over the entire circumference, and the holder With a metal frame covering the entire circumference,
An annular gap between the outer peripheral surface of the inner electrode and the inner peripheral surface of the outer electrode is provided as a gas passage, and the processing gas flowing in the gas passage is turned into plasma by an electric field applied between these electrodes. And
An annular blowing port connected to the gas passage is formed in the workpiece-side covering portion of the holder, and the plasma-treated processing gas blows out from the blowing port toward the workpiece,
An annular suction port is formed at a position corresponding to the blow-out port in the work portion side cover of the frame, and at least the frame is formed with an exhaust passage connecting the suction port to the suction means. By-products and processing gas generated along with the workpiece surface treatment with plasmaized processing gas are exhausted from the suction port to the suction means through the exhaust passage,
The plasma processing apparatus, wherein the exhaust passage has an exhaust tube made of a corrosion-resistant resin that passes through the frame.
上記フレームは筒状をなす外周側の被覆部を有し、この外周側被覆部に、上記排気チューブが軸方向に貫通していることを特徴とする請求項1に記載のプラズマ処理装置。   2. The plasma processing apparatus according to claim 1, wherein the frame has a cylindrical outer cover portion, and the exhaust tube penetrates the outer cover portion in the axial direction. 上記内側電極が電界印加電極となり外側電極が接地電極となり、上記ホルダはさらに、ワークの反対側の被覆部と、上記内側電極を覆う筒状の被覆部とを有し、上記フレームはさらに、ワークの反対側の被覆部と、ホルダの筒状の被覆部を覆う筒状の内周側被覆部とを有し、上記フレームの外周側被覆部は、絶縁材料を介さずに上記外側電極と対向していることを特徴とする請求項2に記載のプラズマ処理装置。   The inner electrode serves as an electric field application electrode, and the outer electrode serves as a ground electrode. The holder further includes a covering portion on the opposite side of the workpiece and a cylindrical covering portion covering the inner electrode, and the frame further includes a workpiece. And a cylindrical inner peripheral covering portion that covers the cylindrical covering portion of the holder, and the outer peripheral covering portion of the frame is opposed to the outer electrode without an insulating material interposed therebetween. The plasma processing apparatus according to claim 2, wherein: 上記フレームのワーク側被覆部は耐腐蝕性の金属からなり、この被覆部と上記ホルダのワーク側被覆部との間には隙間が形成され、この隙間が上記吸い込み口と上記排気チューブとを連ねる排気通路として提供されることを特徴とする請求項2または3に記載のプラズマ処理装置。   The work side covering portion of the frame is made of a corrosion-resistant metal, and a gap is formed between the covering portion and the work side covering portion of the holder, and this gap connects the suction port and the exhaust tube. The plasma processing apparatus according to claim 2, wherein the plasma processing apparatus is provided as an exhaust passage.
JP2003377385A 2003-03-06 2003-11-06 Plasma processing equipment Expired - Fee Related JP3574654B1 (en)

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JP2003377385A JP3574654B1 (en) 2003-11-06 2003-11-06 Plasma processing equipment
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CA002517133A CA2517133A1 (en) 2003-03-06 2004-03-04 Plasma processing apparatus and method
US10/547,078 US7332039B2 (en) 2003-03-06 2004-03-04 Plasma processing apparatus and method thereof
KR1020077016917A KR100814584B1 (en) 2003-03-06 2004-03-04 Plasma processing apparatus and method
PCT/JP2004/002724 WO2004079811A1 (en) 2003-03-06 2004-03-04 Plasma processing apparatus and method
CN2007101692404A CN101145508B (en) 2003-03-06 2004-03-04 Plasma processing device and method
CNB2007101692387A CN100511583C (en) 2003-03-06 2004-03-04 Plasma processing device
CNA2007101692391A CN101146398A (en) 2003-03-06 2004-03-04 Plasma processing device and electrode structure thereof
EP04717310A EP1610368A4 (en) 2003-03-06 2004-03-04 Plasma processing apparatus and method
KR1020057016513A KR100779814B1 (en) 2003-03-06 2004-03-04 Plasma processing apparatus and method
TW093105871A TWI260037B (en) 2003-03-06 2004-03-05 Plasma processing device and method
US11/932,399 US20080295965A1 (en) 2003-03-06 2007-10-31 Plasma processing apparatus
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007080688A (en) * 2005-09-14 2007-03-29 Sekisui Chem Co Ltd Electrode structure for plasma treatment apparatus
JP2007311757A (en) * 2006-05-15 2007-11-29 Ind Technol Res Inst Film removing method and film remover
JP2008293829A (en) * 2007-05-25 2008-12-04 Jeol Ltd Plasma generation system

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007080688A (en) * 2005-09-14 2007-03-29 Sekisui Chem Co Ltd Electrode structure for plasma treatment apparatus
JP2007311757A (en) * 2006-05-15 2007-11-29 Ind Technol Res Inst Film removing method and film remover
US8075790B2 (en) 2006-05-15 2011-12-13 Industrial Technology Research Institute Film removal method and apparatus
JP2008293829A (en) * 2007-05-25 2008-12-04 Jeol Ltd Plasma generation system

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