JP2005126754A

JP2005126754A - Electroplating cell

Info

Publication number: JP2005126754A
Application number: JP2003362470A
Authority: JP
Inventors: Shou Cho; 紹禹丁; Seho Chin; 世峰陳; Ihin Jo; 維彬饒; Shuchi So; 守智曽; Genchi Sha; 元智謝
Original assignee: Suntek Compound Semiconductor Co Ltd
Current assignee: Suntek Compound Semiconductor Co Ltd
Priority date: 2003-10-22
Filing date: 2003-10-22
Publication date: 2005-05-19

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electroplating cell where the flow and the distribution in the flow pressure of a plating liquid fed to the surface of a wafer is uniformized and a uniform metal layer can be formed on the wafer. <P>SOLUTION: Since the electroplating cell is provided with a flow distribution means arranged between a net-like anode and a workpiece such as a wafer, metal can uniformly be grown inside a via hole provided at the wafer. In this way, failures such as the unevenness in the formation of a metal layer and imperfect filling of the metal inside the via hole can effectively be prevented. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、電気メッキ装置、特に被処理物上に均一な電気めっきを施すためのフロー分配手段を備えた電気メッキ装置に関するものである。 The present invention relates to an electroplating apparatus, and more particularly to an electroplating apparatus provided with flow distribution means for performing uniform electroplating on an object to be processed.

ＩＣ（集積回路）の高集積化に伴い、高密度ＩＣにおける配線の形成にＩＣ表面領域だけではもはや十分でない。また、金属酸化物半導体トランジスタの小型化によって、所定の表面領域内により多くの配線が必要となっている。そこで、マルチレベルメタライゼーションプロセス（ＭＭＰ:Multilevel Metallization Process）がＩＣ製造に汎用されている。 With the high integration of ICs (integrated circuits), the IC surface region alone is no longer sufficient for the formation of wiring in high density ICs. In addition, with the miniaturization of metal oxide semiconductor transistors, more wiring is required in a predetermined surface region. Therefore, a multilevel metallization process (MMP) is widely used for IC manufacturing.

ＭＭＰにおいては、接点開口や誘電体開口がまずエッチング除去によって形成され、次いでこれらに金属が充填され接点プラグやバイアプラグ(via plug)が形成される。次に、金属配線が接点プラグやバイアプラグに接続される。一般に、物理蒸着法（ＰＶＤ）、化学蒸着法（ＣＶＤ）もしくは電気メッキが金属層を成長させる方法として利用されている。これらの方法において、ＰＶＤやＣＶＤにかかるコストは電気メッキに要するコストに比して高く、ＰＶＤおよびＣＶＤに共通してみられるギャップ充填時における欠陥は、配線の品質を低下させる。さらに、ＰＶＤやＣＶＤにおける場合ほど電気メッキ工程においてクリーンルームの必要性は高くない。したがって、金属配線を成長させるために電気メッキを利用することは、ＩＣ製造における金属層の形成にとってより良い選択と言える。 In MMP, contact openings and dielectric openings are first formed by etching and then filled with metal to form contact plugs and via plugs. Next, the metal wiring is connected to the contact plug or via plug. In general, physical vapor deposition (PVD), chemical vapor deposition (CVD) or electroplating is used as a method for growing a metal layer. In these methods, the cost required for PVD and CVD is higher than the cost required for electroplating, and defects during gap filling, which are common to PVD and CVD, reduce the quality of wiring. Furthermore, the need for a clean room in the electroplating process is not as high as in PVD and CVD. Therefore, using electroplating to grow metal interconnects can be a better choice for forming metal layers in IC manufacturing.

図１に従来の電気メッキ装置の一例を示す。この電気メッキ装置１００は、ウエハ１０２に電気メッキするために用いられる。ウエハ１０２は、活性表面１０２ａと背面１０２ｂとを有する。活性表面１０２ａの中心付近が電気メッキ領域１０２ｃであり、活性表面１０２ａの周縁には少なくと１つの電気接点１０２ｄが設けられている。また、電気メッキ領域１０２ｃには複数のバイアホール（図示せず）が設けられている。 FIG. 1 shows an example of a conventional electroplating apparatus. The electroplating apparatus 100 is used for electroplating the wafer 102. Wafer 102 has an active surface 102a and a back surface 102b. Near the center of the active surface 102a is an electroplating region 102c, and at least one electrical contact 102d is provided on the periphery of the active surface 102a. The electroplating region 102c is provided with a plurality of via holes (not shown).

電気メッキ装置１００は、外部浴槽１０４、内部浴槽１０６、網状アノード電極１０８、カソード電極１１０、およびメッキ液供給装置１１２とで構成される。内部浴槽１０６は、漏斗形状を有し、外部浴槽１０４内に大きい方の開口が下を向くように配置される。内部浴槽の下部開口は外部浴槽よりも小さく設計されている。網状アノード電極１０８は、内部浴槽１０６の内部に配置される。カソード電極１１０は、外部浴槽の底部に配置され、ウエハ１０２の電気接点１０２ｄに電気的に接続される。カソード電極１１０は、ウエハ１０２ａと外部浴槽１０４とをぴったりと連結し、メッキ液が洩れ出るのを防いでいる。 The electroplating apparatus 100 includes an external bathtub 104, an internal bathtub 106, a mesh-like anode electrode 108, a cathode electrode 110, and a plating solution supply apparatus 112. The internal bathtub 106 has a funnel shape, and is arranged in the external bathtub 104 so that the larger opening faces downward. The lower opening of the internal bathtub is designed to be smaller than the external bathtub. The mesh anode 108 is disposed inside the internal bath 106. The cathode electrode 110 is disposed at the bottom of the external bathtub and is electrically connected to the electrical contact 102 d of the wafer 102. The cathode electrode 110 tightly connects the wafer 102a and the external bathtub 104 to prevent the plating solution from leaking out.

メッキ液供給装置１１２は、内部浴槽１０６の小さい方の開口を介して内部浴槽１０６内にメッキ液を供給する。供給されたメッキ液は内部浴槽１０６から外部浴槽１０４に向かって流れ、内部浴槽と外部浴槽との間の隙間を介して外部浴槽内を満たす。その後、メッキ液はメッキ液供給装置１１２に戻され、メッキ液の循環が完了する。このように、外部浴槽１０６および内部浴槽１０４内に新しいメッキ液を供給することができる。 The plating solution supply device 112 supplies the plating solution into the internal bath 106 through the smaller opening of the internal bath 106. The supplied plating solution flows from the internal bathtub 106 toward the external bathtub 104 and fills the external bathtub through a gap between the internal bathtub and the external bathtub. Thereafter, the plating solution is returned to the plating solution supply device 112, and the circulation of the plating solution is completed. In this way, a new plating solution can be supplied into the external bathtub 106 and the internal bathtub 104.

ＩＣの高集積化にともない、回路の構成要素の寸法が減少し、ウエハ上のバイアホールの寸法もそれに対応して小さくなっているので、従来の電気メッキプロセスにおいては、ウエハ上に形成された金属層にむらが生じたり、金属層がバイアホール内に部分的にしか充填されないといった問題があった。 As ICs are highly integrated, the size of circuit components has decreased, and the size of via holes on the wafer has also decreased correspondingly. There are problems such as unevenness of the metal layer and the metal layer being only partially filled into the via hole.

したがって、本発明は、従来の電気メッキ装置の問題点に鑑みてなされたものであって、その目的とするところは、ウエハ上にメッキ液の均一な分布を実現して、ウエハ上に均一な金属層を形成できるとともに、バイア内への金属層の良好な充填を達成可能なメッキ装置を提供することにある。 Therefore, the present invention has been made in view of the problems of the conventional electroplating apparatus, and the object of the present invention is to realize a uniform distribution of the plating solution on the wafer so that it is uniform on the wafer. An object of the present invention is to provide a plating apparatus capable of forming a metal layer and achieving good filling of the metal layer into the via.

すなわち、本発明のメッキ装置は、メッキ領域、およびその周縁に少なくとも１つの電気接点を有する被処理物に電気メッキを施すための装置であって、下部に被処理物が配置される被処理物インターフェース(workpiece interface)、すなわち処理空間を内部に有する浴槽と、浴槽内に配置される網状アノード電極と、被処理物インターフェースの周縁に配置され、被処理物の電気接点に電気的に接続されるカソード電極と、網状アノード電極と被処理物との間に配置されるフロー分配手段(flow-distribution device)とを具備し、フロー分配手段は、被処理物に対して一様な流圧でメッキ液の均一な分布を提供するための複数のフロー分配孔を有することを特徴とする。 That is, the plating apparatus of the present invention is an apparatus for performing electroplating on an object to be processed having at least one electrical contact on the plating region and the periphery thereof, and the object to be processed is disposed below. An interface (workpiece interface), that is, a bath having a processing space therein, a mesh anode electrode disposed in the bath, and a peripheral edge of the workpiece interface, and electrically connected to an electrical contact of the workpiece A cathode-electrode and a flow-distribution device disposed between the mesh anode electrode and the object to be processed; It has a plurality of flow distribution holes for providing a uniform distribution of liquid.

要するに、本発明の電気メッキ装置は、内部に被処理物が配置され、固定される浴槽を有し、網状アノード電極が浴槽内に配置され、カソード電極は浴槽の底部に配置されて被処理物の周縁にある電気接点に電気的に接続され、フロー分配手段は、複数の孔を有し、これらの孔を介してメッキ液を被処理物上に均一に分配することを特徴とする。 In short, the electroplating apparatus of the present invention has a bathtub in which an object to be processed is arranged and fixed, a mesh anode electrode is arranged in the bathtub, and a cathode electrode is arranged at the bottom of the bathtub. The flow distribution means has a plurality of holes, and the plating solution is uniformly distributed on the object to be processed through these holes.

本発明の好ましい実施形態として、フロー分配手段は絶縁材料で構成されることが好ましく、フロー分配手段の複数の孔はフロー分配手段に均一に分布し、孔の形状は円錐形状もしくは円筒Ｈ形状であることが好ましい。 As a preferred embodiment of the present invention, the flow distribution means is preferably made of an insulating material, and the plurality of holes of the flow distribution means are uniformly distributed in the flow distribution means, and the shape of the holes is a conical shape or a cylindrical H shape. Preferably there is.

また、浴槽は、メッキ液の流入口と少なくとも一つのメッキ液の排水口と具備することが好ましい。この場合、メッキ液は、流入口を介して浴槽内に供給され、網状アノード電極およびフロー分配手段を経て被処理物上にメッキ液の均一に分布する流れが提供される。次いで、メッキ液は排水口を介して浴槽の外部に排出され、新鮮なメッキ液が再び流入口を介して浴槽内に供給される。このようにメッキ液を循環させることで常に新鮮なメッキ液を被処理物のメッキ領域に供給することができる。 Moreover, it is preferable that the bathtub comprises a plating solution inlet and at least one plating solution drain. In this case, the plating solution is supplied into the bath through the inlet, and a flow in which the plating solution is uniformly distributed on the workpiece is provided via the mesh anode electrode and the flow distribution means. Next, the plating solution is discharged to the outside of the bathtub through the drain port, and fresh plating solution is again supplied into the bathtub through the inlet. By circulating the plating solution in this way, a fresh plating solution can always be supplied to the plating region of the object to be processed.

さらに、上記した浴槽は、外部浴槽と内部浴槽とで構成されることが好ましい。この場合、被処理物が固定される被処理物インターフェースは外部浴槽内に設計され、内部浴槽は外部浴槽内に配置される。また、フロー分配手段は、メッキ液が被処理物インターフェースに向かって流れるように内部浴槽内に配置される。外部浴槽は、メッキ液の排水口を有し、内部浴槽はメッキ液の流入口を有する。このような構成において、メッキ液は流入口から内部浴槽内に流れ込み、網状アノード電極およびフロー分配手段を経て被処理物インターフェース領域に到達する。メッキ液はフロー分配手段によってその流れ及び流圧が均一にされて被処理物インターフェース領域に配置された被処理物に接触する。メッキ液は被処理物インターフェースを通過した後、外部浴槽の排水口を介して外部浴槽から排出される。このように、流入口を介してのメッキ液の供給と排出口からのメッキ液の回収を継続することにより、被処理物インターフェースには常に新鮮なメッキ液を循環的に供給することができる。 Furthermore, it is preferable that an above-described bathtub is comprised with an external bathtub and an internal bathtub. In this case, the workpiece interface to which the workpiece is fixed is designed in the external bathtub, and the internal bathtub is arranged in the external bathtub. The flow distribution means is disposed in the internal bath so that the plating solution flows toward the workpiece interface. The external bathtub has a plating solution drain and the internal bath has a plating solution inlet. In such a configuration, the plating solution flows from the inlet into the internal bath and reaches the workpiece interface region via the mesh anode electrode and the flow distribution means. The plating solution is made uniform in flow and flow pressure by the flow distribution means and comes into contact with the workpiece disposed in the workpiece interface area. After passing through the workpiece interface, the plating solution is discharged from the external bathtub through the drain port of the external bathtub. In this way, by continuing the supply of the plating solution through the inlet and the recovery of the plating solution from the discharge port, it is possible to constantly supply fresh plating solution to the workpiece interface in a circulating manner.

本発明の電気メッキ装置は、被処理物に対してメッキ液の均一な流れ及び流圧を提供し、被処理物の表面に均一にメッキ液を分布させるためのフロー分配手段をメッキ浴内に有するので、金属層を被処理物上に均一に成長させることができる。 The electroplating apparatus of the present invention provides a uniform flow and flow pressure of the plating solution to the object to be processed, and a flow distribution means for uniformly distributing the plating solution on the surface of the object to be processed in the plating bath. Therefore, the metal layer can be uniformly grown on the workpiece.

本発明のさらなる目的および効果は、以下の発明を実施するための最良の形態からさらに明確に理解することができる。 Further objects and advantages of the present invention can be more clearly understood from the following best mode for carrying out the invention.

本発明の好ましい実施形態にかかる電気メッキ装置の断面図およびこの電気メッキ装置の内部浴槽の斜視図を図２および図３にそれぞれ示す。 A sectional view of an electroplating apparatus according to a preferred embodiment of the present invention and a perspective view of an internal bath of the electroplating apparatus are shown in FIGS. 2 and 3, respectively.

図２および図３に示すように、本発明の電気メッキ装置２００は、浴槽２０１、網状アノード電極２０６、フロー分配部材２０８、カソード電極２１０、およびメッキ液供給装置２１２とで構成される。 As shown in FIGS. 2 and 3, the electroplating apparatus 200 of the present invention includes a bath 201, a mesh anode electrode 206, a flow distribution member 208, a cathode electrode 210, and a plating solution supply apparatus 212.

本実施形態においては、浴槽２０１は外部浴槽２０２と内部浴槽２０４とでなる。外部浴槽２０２には、メッキされるべき被処理物が配置される被処理物インターフェース２０２ａが設けられる。被処理物インターフェース２０２ａは被処理物にメッキ処理が施される処理空間に相当し、本実施形態では被処理物であるウエハ２１４を電気メッキするために設計されている。 In the present embodiment, the bathtub 201 includes an external bathtub 202 and an internal bathtub 204. The external bathtub 202 is provided with a workpiece interface 202a in which workpieces to be plated are arranged. The workpiece interface 202a corresponds to a processing space where the workpiece is subjected to plating. In this embodiment, the workpiece interface 202a is designed for electroplating the wafer 214 as the workpiece.

被処理物であるウエハ２１４は、被処理物インターフェース２０２ａの下部に配置され、封止手段（図示せず）によりウエハ２１４が外部浴槽２０２の下端にしっかりと連結される。これにより、ウエハ２１４は外部浴槽の底部を完全に封止してメッキ液を外部浴槽内に貯めることができる。ウエハ２１４は、活性領域２１４ａと不活性領域２１４ｂを有する。活性領域２１４ａの中心部はメッキ領域２１４ｃであり、その周縁には少なくとも一つの電気接点２１４ｄが設けられている。また、複数のバイアホール（図示せず）がメッキ領域２１４ｃに設けられている。例えば、内部浴槽２０４は漏斗形状に形成され、図２に示すように外部浴槽内に配置される。すなわち、内部浴槽２０４の大きい方の開口２０４ａが下を向くように配置され、メッキ液が供給される内部浴槽の小さい方の開口２０４ｂが上を向くように外部浴槽内に配置される。内部浴槽２０４の大きい方の開口２０４ａの直径は外部浴槽２０２の直径よりも小さく、大きい方の開口２０４ａと外部浴槽２０２の被処理物インターフェース２０２ａとの間に空間が提供される。 A wafer 214 as a workpiece is disposed below the workpiece interface 202a, and the wafer 214 is firmly connected to the lower end of the external bathtub 202 by a sealing means (not shown). As a result, the wafer 214 can completely seal the bottom of the external bathtub and store the plating solution in the external bathtub. The wafer 214 has an active region 214a and an inactive region 214b. The central portion of the active region 214a is a plating region 214c, and at least one electrical contact 214d is provided on the periphery thereof. A plurality of via holes (not shown) are provided in the plating region 214c. For example, the internal bathtub 204 is formed in a funnel shape and is disposed in the external bathtub as shown in FIG. In other words, the large opening 204a of the internal bathtub 204 is arranged to face downward, and the small opening 204b of the internal bathtub to which the plating solution is supplied is arranged in the external bathtub. The diameter of the larger opening 204a of the inner bathtub 204 is smaller than the diameter of the outer bathtub 202, and a space is provided between the larger opening 204a and the workpiece interface 202a of the outer bathtub 202.

網状アノード電極２０６は内部浴槽の内側に配置され、網状アノード電極２０６と大きい開口２０４ａとの間には空間が提供される。 The mesh-like anode electrode 206 is disposed inside the internal bath, and a space is provided between the mesh-like anode electrode 206 and the large opening 204a.

フロー分配部材２０８は、網状アノード電極２０６と被処理物であるウエハ２１４との間に配置される。例えば、フロー分配部材２０８は所定パターンで配列させた複数のフロー分配孔を有し、内部浴槽２０４の大きい方の開口２０４ａ付近に配置される。フロー分配孔２０８ａの配列パターンとしては、フロー分配孔２０８ａはフロー分配部材２０８に均一に分布するように形成することが好ましく、例えば、図４に示すような位置関係となるように複数のフロー分配孔を配置することが好ましい。図４はフロー分配部材２０８の部分上面図を示しており、横方向に隣接するフロー分配孔は距離Ｙで離されており、斜め方向に隣接するフロー分配孔２０８ａは距離Ｚで離されている。すなわち、これら３つのフロー分配孔の中心は略正三角形を構成するように配置される。 The flow distribution member 208 is disposed between the mesh-like anode electrode 206 and the wafer 214 that is the object to be processed. For example, the flow distribution member 208 has a plurality of flow distribution holes arranged in a predetermined pattern, and is disposed in the vicinity of the larger opening 204 a of the internal bathtub 204. As an arrangement pattern of the flow distribution holes 208a, the flow distribution holes 208a are preferably formed so as to be uniformly distributed in the flow distribution member 208. For example, a plurality of flow distribution holes are arranged so as to have a positional relationship as shown in FIG. It is preferable to arrange the holes. FIG. 4 shows a partial top view of the flow distribution member 208, where the flow distribution holes adjacent in the lateral direction are separated by a distance Y, and the flow distribution holes 208a adjacent in the oblique direction are separated by a distance Z. . That is, the centers of these three flow distribution holes are arranged to form a substantially equilateral triangle.

本発明においては、フロー分配孔２０８ａの形成により、ウエハ上におけるメッキ液の摂動(perturbation motion)が増大し、これが不均一に分散された流体の流れおよび流圧を補償するので、結果的に、金属層をウエハ２１４上に均一に成長させることができる。したがって、不均一な金属層の形成やバイアホールの不完全な充填などを効果的に防ぐことができるのである。尚、本実施例では、フロー分配部材２０８は内部浴槽２０４とは個別に開口２０４ａ付近に設けられているが、フロー分配部材２０８と内部浴槽２０４を一体構造となるように形成してもよい。 In the present invention, the formation of the flow distribution holes 208a increases the perturbation motion of the plating solution on the wafer, which compensates for unevenly distributed fluid flow and flow pressure, resulting in: A metal layer can be uniformly grown on the wafer 214. Therefore, formation of a non-uniform metal layer, incomplete filling of via holes, etc. can be effectively prevented. In the present embodiment, the flow distribution member 208 is provided in the vicinity of the opening 204a separately from the internal bathtub 204, but the flow distribution member 208 and the internal bathtub 204 may be formed as an integral structure.

フロー分配孔の形状としては、例えば、図５のフロー分配部材２０８の厚み方向における部分断面図に示されるように、フロー分配孔２０８ａの形状を円錐形状とすることが好ましい。すなわち、フロー分配部材の一方の表面に開口する孔の直径が、対向する側の表面に開口する孔の直径よりも大きくなるように、等脚台形でなる断面を有するフロー分配孔とすることが好ましい。この場合、円錐形状の孔の小さい方の開口をウエハ２１４のメッキ領域２１４ｃに向けて配置することが好ましい。 As the shape of the flow distribution hole, for example, as shown in the partial cross-sectional view in the thickness direction of the flow distribution member 208 in FIG. 5, the shape of the flow distribution hole 208a is preferably a conical shape. That is, a flow distribution hole having an isosceles trapezoidal cross section so that the diameter of the hole opened on one surface of the flow distribution member is larger than the diameter of the hole opened on the opposite surface. preferable. In this case, it is preferable to arrange the smaller opening of the conical hole toward the plating region 214 c of the wafer 214.

また、フロー分配孔２０８ａの別の好ましい形状として、図６に示されるような円筒Ｈ形状の断面を有することが好ましい。ここで、円筒Ｈ形状とは、図６に示されるような、フロー分配部材の一対の表面に貫通孔を形成した後、その貫通孔の入口付近及び出口付近においてテーパ部を形成して内部に比べて開口径を大きくした形状を含むものとして定義される。このような形状は、例えば、ドリルによる穴あけ加工によって形成できる。好ましくは、円筒型Ｈ形状を有する孔は、図４（ｃ）に示されるような異なる直径を有することが好ましい。フロー分配部材２０８とウエハ２１４との間の距離は、例えば０．１ｍｍ〜５００ｍｍの範囲とすることができる。このような形状とすることにより、フロー分配孔の入口付近に達したメッキ液は一旦テーパ部で集束された後、出口付近のテーパ部で再びメッキ液が放散されてフロー分配孔を通過することになる。 Further, as another preferable shape of the flow distribution hole 208a, it is preferable to have a cylindrical H-shaped cross section as shown in FIG. Here, the cylindrical H shape means that a through hole is formed on a pair of surfaces of a flow distribution member as shown in FIG. 6, and then a tapered portion is formed in the vicinity of the inlet and the outlet of the through hole. It is defined as including a shape with a larger opening diameter. Such a shape can be formed, for example, by drilling with a drill. Preferably, the holes having a cylindrical H shape have different diameters as shown in FIG. 4 (c). The distance between the flow distribution member 208 and the wafer 214 can be, for example, in the range of 0.1 mm to 500 mm. By adopting such a shape, the plating solution that has reached the vicinity of the inlet of the flow distribution hole is once concentrated at the tapered portion, and then the plating solution is again diffused at the tapered portion near the outlet and passes through the flow distribution hole. become.

カソード電極２１０は、外部浴槽２０２内に被処理物インターフェース２０２ａの横方向に隣接して配置され、ウエハ２１４の電気接点に電気的に接続される。このように、カソード電極はウエハ２１４に電気的に連結される。 The cathode electrode 210 is disposed in the external bath 202 adjacent to the workpiece interface 202 a in the lateral direction, and is electrically connected to the electrical contact of the wafer 214. Thus, the cathode electrode is electrically connected to the wafer 214.

電気メッキ液供給装置２１２はメッキ液を汲み上げ、内部浴槽２０４の開口２０４ｂを介して内部浴槽２０４内にメッキ液を供給する。メッキ液は網状アノード電極２０６およびフロー分配部材２０８を経て被処理物であるウエハ２１４に到達する。次いで、メッキ液は内部浴槽２０４と外部浴槽２０２との間の隙間を介して外部浴槽に流れ込み、外部浴槽がメッキ液で満たされる。その後、メッキ液は排水口を介してメッキ液供給装置に戻され、メッキ液の循環が完了する。このメッキ液を循環させることにより内部浴槽および外部浴槽内には常に新鮮なメッキ液が提供される。 The electroplating solution supply device 212 pumps up the plating solution and supplies the plating solution into the internal bath 204 through the opening 204 b of the internal bath 204. The plating solution reaches the wafer 214 that is the object to be processed through the mesh anode 206 and the flow distribution member 208. Next, the plating solution flows into the external bathtub through a gap between the internal bathtub 204 and the external bathtub 202, and the external bathtub is filled with the plating solution. Thereafter, the plating solution is returned to the plating solution supply device via the drain port, and the circulation of the plating solution is completed. By circulating this plating solution, a fresh plating solution is always provided in the internal bath and the external bath.

上記した本発明の好ましい実施形態にかかる電気メッキ装置を用いて、以下のように電気メッキを行うことができる。 Electroplating can be performed as follows using the above-described electroplating apparatus according to a preferred embodiment of the present invention.

図２に示すように、ウエハ２１４が外部浴槽２０２の被処理物インターフェース２０２ａの下側に配置され、カソード電極２１０がウエハ２１４の電気接点２１４ｄに電気的に接続される。封止手段（図示せず）によってウエハ２１４が外部浴槽２０２にぴったりと連結され、ウエハ２１４は外部浴槽の底板を形成する。これによりメッキ液を外部浴槽内に貯めることができる。 As shown in FIG. 2, the wafer 214 is disposed below the workpiece interface 202 a of the external bathtub 202, and the cathode electrode 210 is electrically connected to the electrical contact 214 d of the wafer 214. A sealing means (not shown) tightly connects the wafer 214 to the outer tub 202, which forms the bottom plate of the outer tub. Thereby, a plating solution can be stored in an external bathtub.

メッキ液供給装置２１２は、メッキ液を汲み上げて開口２０４ｂを介して内部浴槽２０４内に供給する。メッキ液はフロー分配部材２０８のフロー分配孔２０８ａを介して外部浴槽２０２内に流れ込む。フロー分配孔２０８ａは、ウエハ２１４にメッキ液の一様な流れと流圧を提供するように、すなわちメッキ液が被処理物のウエハの少なくともメッキ領域に均一に分配されるように設計されている。これにより、ウエハ２１４のメッキ領域に設けられたバイアホールの各々にメッキ液を均一に供給することができる。 The plating solution supply device 212 pumps up the plating solution and supplies it into the internal bathtub 204 through the opening 204b. The plating solution flows into the external bathtub 202 through the flow distribution hole 208 a of the flow distribution member 208. The flow distribution holes 208a are designed to provide a uniform flow and flow pressure of the plating solution to the wafer 214, i.e., to uniformly distribute the plating solution to at least the plating region of the wafer to be processed. . As a result, the plating solution can be uniformly supplied to each of the via holes provided in the plating region of the wafer 214.

その後、メッキ液は内部浴槽２０４と外部浴槽２０２との間の空間を介して徐々に外部浴槽内を満たしてゆく。外部浴槽内を満たしたメッキ液はメッキ液供給装置２１２に排水口を介して戻され、メッキ供給装置−内部浴槽−被処理物−外部浴槽−メッキ供給装置でなるメッキ液の循環経路が形成される。電気メッキを行う際は、電源に接続された網状アノード電極とカソード電極に電力を供給すればよい。電気メッキ中、メッキ液は均一に被処理物のメッキ領域に分散され、一様な流圧でウエハに供給されるので、金属はウエハの各バイアホール内おいて均一に成長することができて、メッキ液の不均一な流れによってバイアホール内に不完全な金属の充填が生じるのを効果的に防止することができる。 Thereafter, the plating solution gradually fills the inside of the external bathtub through the space between the internal bathtub 204 and the external bathtub 202. The plating solution filling the inside of the external bathtub is returned to the plating solution supply device 212 through the drain port, and a plating solution circulation path is formed by the plating supply device-inner bathtub-processing object-external bathtub-plating supply device. The When electroplating is performed, power may be supplied to the mesh anode and cathode connected to the power source. During electroplating, the plating solution is uniformly distributed in the plating area of the workpiece and is supplied to the wafer with a uniform fluid pressure, so that the metal can grow uniformly in each via hole of the wafer. It is possible to effectively prevent incomplete metal filling in the via hole due to the uneven flow of the plating solution.

本発明の実施形態において、電気メッキ浴２０１は外部浴槽２０２と内部浴槽２０４とで構成されているが、本発明を実施するために単一の電気メッキ浴内にフロー分配部材を一体に設けても良い。この場合においても、ウエハの各バイアホール内に金属層を均一に成長させることができる。従って、不均一な金属層の形成や不完全なバイアホール内への金属の充填などの不具合の発生を解消することができる。 In the embodiment of the present invention, the electroplating bath 201 is composed of an external bathtub 202 and an internal bathtub 204, but in order to carry out the present invention, a flow distribution member is integrally provided in a single electroplating bath. Also good. Even in this case, the metal layer can be uniformly grown in each via hole of the wafer. Therefore, it is possible to eliminate problems such as formation of a non-uniform metal layer and incomplete filling of the metal into the via hole.

以上、本発明にかかる電気メッキ装置を好ましい実施形態に基づいて説明してきたが、これらは本発明の技術思想を理解するためのものであって、本発明を限定する意味に解釈されるべきでない。また、本発明の技術思想を逸脱しない限りにおいて、本発明の構成を適宜変更してもよいことは言うまでもない。 As mentioned above, although the electroplating apparatus concerning this invention has been demonstrated based on preferable embodiment, these are for understanding the technical idea of this invention, and should not be interpreted in the meaning which limits this invention . Needless to say, the configuration of the present invention may be changed as appropriate without departing from the technical idea of the present invention.

上記したように、本発明の電気メッキ装置によれば、内部浴槽２０４と外部浴槽２０２とでなる電気メッキ浴２０１が一様な流圧でメッキ液をウエハ２１４上に均一に分散させるためのフロー分配部材２０８を備え、メッキ液供給装置２１２によってメッキ液を循環させているので、常に新鮮なメッキ液をウエハ２１４に供給しながら、各バイアホール内に均一にメッキ液を到達させて電気メッキを行うことができる。したがって、ＩＣ製造に電気メッキプロセスを採用する場合に、ウエハ上に形成された金属層にむらが生じたり、金属層がバイアホール内に部分的にしか充填されないといった問題を解消でき、高品質で均一な電気メッキを効率よく被処理物に提供することができる電気メッキ装置として期待されている。 As described above, according to the electroplating apparatus of the present invention, the flow for the electroplating bath 201 composed of the internal bath 204 and the external bath 202 to uniformly disperse the plating solution on the wafer 214 with a uniform flow pressure. Since the plating solution is circulated by the plating solution supply device 212 provided with the distribution member 208, the plating solution reaches the via holes uniformly while always supplying the fresh plating solution to the wafer 214 to perform electroplating. It can be carried out. Therefore, when the electroplating process is adopted for IC manufacture, the problem that the metal layer formed on the wafer is uneven or the metal layer is only partially filled in the via hole can be solved with high quality. It is expected as an electroplating apparatus that can efficiently provide uniform electroplating to a workpiece.

先行技術に基づく電気メッキ装置を示す概略図である。It is the schematic which shows the electroplating apparatus based on a prior art. 本発明の好ましい実施形態に基づく電気メッキ装置を示す概略図である。1 is a schematic diagram illustrating an electroplating apparatus according to a preferred embodiment of the present invention. 本発明の好ましい実施形態に基づく電気メッキ装置の内部浴槽を示す概略図である。It is the schematic which shows the internal bathtub of the electroplating apparatus based on preferable embodiment of this invention. 本発明の好ましい実施形態に基づく電気メッキ装置のフロー分配部材の部分上面図である。It is a partial top view of the flow distribution member of the electroplating apparatus based on preferable embodiment of this invention. 本発明の好ましい実施形態に基づくフロー分配孔の断面形状を示す図である。It is a figure which shows the cross-sectional shape of the flow distribution hole based on preferable embodiment of this invention. 本発明の別の好ましい実施形態に基づくフロー分配孔の断面形状を示す図である。FIG. 6 is a diagram showing a cross-sectional shape of a flow distribution hole according to another preferred embodiment of the present invention.

Explanation of symbols

２００電気メッキ装置
２０２外部浴槽
２０２ａ被処理物インターフェース
２０４内部浴槽
２０４ａ、２０４ｂ開口
２０６網状アノード電極
２０８フロー分配部材
２１０カソード電極
２１４ウエハ
２１４ａ活性領域
２１４ｂ不活性領域
２１４ｃメッキ領域
２１４ｄ電気接点 200 Electroplating apparatus 202 External bath 202a Workpiece interface 204 Internal bath 204a, 204b Opening 206 Reticulated anode electrode 208 Flow distribution member 210 Cathode electrode 214 Wafer 214a Active region 214b Inactive region 214c Plating region 214d Electrical contact

Claims

An electroplating apparatus for performing electroplating on an object to be processed having at least one electric contact at a plating region and its peripheral edge, and an object interface (workpiece interface) in which an object to be processed is arranged at a lower part A bath having a mesh anode, a cathode electrode disposed in the periphery of the workpiece interface, and a cathode electrode electrically connected to an electrical contact of the workpiece; the mesh anode; A flow-distribution device disposed between the workpiece and the workpiece, the flow distributor providing a uniform distribution of the plating solution to the workpiece with a uniform flow pressure An electroplating apparatus having a plurality of flow distribution holes for performing

2. The electroplating apparatus according to claim 1, wherein the flow distribution hole has a conical shape or a cylindrical H-shape.

The bathtub has an inlet and at least one drain, and the plating solution supplied from the inlet reaches the flow distribution means through the mesh anode electrode, and the disturbance of the plating solution uniformly distributed by the flow distribution means. 2. The method according to claim 1, wherein a flow is provided to the object to be treated, and then the plating solution is discharged to the outside of the bathtub through the drain, thereby refreshing the plating solution in the bathtub. Electroplating equipment.

An electroplating apparatus for performing electroplating on an object to be processed having at least one electrical contact on a plating area and its peripheral edge, and an external bathtub having an object interface (workpiece interface) on which the object is disposed A bath composed of an internal bath disposed in the external bath and having a flow-distribution device interface, a mesh anode electrode disposed in the internal bath, and a workpiece interface A cathode electrode disposed on a peripheral edge and electrically connected to an electrical contact of the object to be processed; and a flow distribution means disposed on the flow distribution means interface between the mesh anode electrode and the object to be processed. The flow distribution means has a plurality of flows for providing a uniformly distributed flow of the plating solution to the plating area of the workpiece. Electroplating apparatus characterized by having a dispensing hole.

The outer tub has a drain, the inner tub has an inflow port, and the plating solution supplied from the inflow port reaches the flow distribution unit through the mesh anode, and is uniformly distributed by the flow distribution unit. The turbulent flow of the plating solution is provided to the object to be processed, and then the plating solution is discharged to the outside of the bathtub through the drain, thereby refreshing the plating solution in the bathtub. 4. The electroplating apparatus according to 4.

The inner tub has a funnel shape having a first opening and a second opening larger than the first opening, the inlet is provided by the first opening, and the flow distribution means is accommodated in the second opening. The electroplating apparatus according to claim 4.

An electroplating apparatus for performing electroplating on an object to be processed having at least one electrical contact at a plating area and its peripheral edge, wherein the electroplating apparatus includes the following configuration:
An external bathtub having a workpiece interface in which the workpiece is disposed;
An internal bathtub coaxially arranged inside the external bathtub, the internal bathtub has a flow-distribution device interface near the first opening of the internal bathtub to direct the plating solution to the workpiece interface. The flow distribution means disposed at the flow distribution means interface has a plurality of flow distribution holes for providing a uniform distribution of the plating solution with a uniform flow pressure with respect to the plating area of the workpiece. ;
A mesh anode disposed in the internal bath;
A cathode electrode disposed at a peripheral edge of the workpiece interface of the external bathtub and electrically connected to an electrical contact of the workpiece;
A plating solution supply device connected to the second opening of the internal bath and supplying the plating solution to the internal bath through the second opening; after the plating solution flows through the mesh anode electrode and the flow distribution means; It is discharged through the drain of the external bathtub and refreshed.