JP2005123443A - Mask, apparatus, and method for electron beam exposure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a mask for electron beam exposure where kinds of patterns of exposure to a wafer by one shot of an electronic beam are increased. <P>SOLUTION: In the electron beam exposure apparatus for carrying out the exposure of the patterns to the wafer by the electronic beam, the mask for electronic beam exposure which forms the shape of the cross section of the electronic beam has an exposure mask pattern which is formed in a first rectangular block area having nearly the same area as the cross section of the electronic beam at the mask for electronic beam exposure and which is an opening of a pattern shape to be formed on the wafer as the result of irradiating of the whole or a part of the first block area with the electronic beam, and a first measuring pattern which is formed near the first block area and which is for measuring the irradiation position with the electronic beam to the first block area in the case of irradiating a part of the first block area with the electronic beam. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to an electron beam exposure mask, an electron beam exposure apparatus, and an electron beam exposure method. In particular, the present invention relates to an electron beam exposure mask having an exposure mask pattern which is an opening having a pattern shape to be exposed on a wafer by irradiating the whole or a part of a block region with an electron beam, and the electron beam exposure The present invention relates to an electron beam exposure apparatus including a mask and an electron beam exposure method using the electron beam exposure apparatus.

  Conventional electron beam exposure includes partial batch exposure in which exposure is performed by joining patterns on a wafer using a mask having a figure as a basic element of a repeatable pattern as an exposure mask pattern (for example, a patent) See references 1 and 2.) In block exposure, which is a kind of partial batch exposure, a plurality of, for example, 100 pieces arranged on a mask are applied by deflecting an electron beam and irradiating it on a stencil pattern formed in, for example, a 300 * 300 μm block region. One stencil pattern is selected from the stencil patterns. Then, the cross-sectional shape of the electron beam is formed into a selected stencil pattern shape, and the electron beam formed by passing through the mask is deflected by a deflector and turned back. Thereafter, the cross-sectional shape of the electron beam is reduced at a constant reduction rate, and a region on a wafer of, for example, 5 * 5 μm is transferred. By repeating this process, the pattern is exposed on the entire wafer.

  In the mask used in such block exposure, for example, a stencil pattern is formed for each block area of 300 * 300 μm, and the block areas are separated by an electron beam non-transmission portion. Normally, in block exposure, the entire block area is irradiated with an electron beam, and the entire stencil pattern formed in the block area is exposed in one shot. Therefore, it is possible to select a stencil pattern formed in an arbitrary block area on the mask by preparing the deflection condition and deflection return condition for the electron beam with respect to the mask for each block area. it can.

JP 2003-7578 A JP-A-8-88160

  In the mask used in the conventional block exposure, since the block region where the stencil pattern is formed is exposed in one shot, the types of patterns that can be exposed in one shot are limited to the types of stencil patterns formed on the mask. End up. Therefore, a portion of a pattern different from the stencil pattern is exposed by variable rectangular exposure to realize flexible pattern exposure. However, variable rectangular exposure has a problem that the time required for exposure is long.

  Therefore, an object of the present invention is to provide an electron beam exposure mask, an electron beam exposure apparatus, and an electron beam exposure method that can solve the above-described problems. This object is achieved by a combination of features described in the independent claims. The dependent claims define further advantageous specific examples of the present invention.

  According to a first aspect of the present invention, in an electron beam exposure apparatus that exposes a pattern on a wafer using an electron beam, an electron beam exposure mask that shapes the cross-sectional shape of the electron beam, the electron beam exposure mask A pattern-shaped opening that is formed in a rectangular first block region having an area substantially equal to the cross-sectional area of the electron beam and is exposed to the wafer by irradiating the entire or part of the first block region with the electron beam. And an opening for measuring the irradiation position of the electron beam with respect to the first block region when the electron beam is irradiated to a part of the first block region. A first measurement pattern.

  The first measurement pattern may be formed in a rectangular second block region having an area substantially equal to the cross-sectional area of the electron beam in the electron beam exposure mask adjacent to the first block region. The first measurement pattern may have a rectangular shape, and the length in the longitudinal direction may be substantially equal to one side of the first block region, and may be formed substantially parallel to one side.

  The exposure mask pattern is an opening to be irradiated with an electron beam in a part of the first direction along a predetermined side of the first block region. The first measurement pattern is formed with respect to the first block region. In the second block region provided adjacent to the second direction substantially perpendicular to the first direction, the second block region may be formed along the first direction at a position farthest from the first block region.

  A second measurement pattern, which is formed in the vicinity of the first block region and is an opening for measuring the irradiation position of the electron beam to the first block region when a part of the first block region is irradiated with the electron beam, is further provided. The exposure mask pattern is irradiated with an electron beam in a first direction which is a direction along a predetermined side of the first block region and a part of a second direction substantially perpendicular to the first direction. The first measurement pattern is located at a position farthest from the first block region in the second block region provided adjacent to the first block region in the second direction. The second measurement pattern is formed along the direction, and the second measurement pattern is located at a position farthest from the first block region in the third block region provided adjacent to the first block region in the first direction. Along the direction of It may be formed Te.

  According to a second aspect of the present invention, there is provided an electron beam exposure apparatus for exposing a pattern to a wafer using an electron beam, comprising an electron beam exposure mask for shaping a cross-sectional shape of the electron beam, and an electron beam exposure mask. Is formed in a rectangular first block region having an area substantially equal to the cross-sectional area of the electron beam in the electron beam exposure mask, and the wafer is irradiated by irradiating the whole or part of the first block region with the electron beam. An exposure mask pattern, which is an opening having a pattern shape to be exposed, and an electron beam applied to the first block region when the electron beam is applied to a part of the first block region. And a first measurement pattern which is an opening for measuring a position.

  Deflecting the electron beam to irradiate and pass a part of the first measurement pattern with the electron beam; and detecting a cross-sectional shape of the electron beam that has passed through the first measurement pattern and applied to the wafer. Based on the irradiation position measurement unit that measures the irradiation position of the electron beam with respect to the first block region, and the irradiation position measured by the irradiation position measurement unit, when irradiating a part of the first block region with the electron beam, A deflection control unit that controls the deflection amount of the electron beam by the deflection unit may be further provided.

  The exposure mask pattern is an opening to be irradiated with an electron beam in a part of the first direction which is a direction along a predetermined side of the first block region. The first measurement pattern is the first block region. Is formed along the first direction in the second block region provided adjacent to the second direction substantially perpendicular to the first direction, and the irradiation position measurement unit passes through the first measurement pattern. Then, by detecting the cross-sectional shape of the electron beam irradiated on the wafer, the irradiation position of the electron beam in the first direction with respect to the first block region is measured, and the deflection control unit measures the irradiation measured by the irradiation position measuring unit. Based on the position, the deflection amount in the first direction by the deflection unit when the electron beam is irradiated onto a part of the first block region may be controlled.

  The exposure mask pattern is formed in the vicinity of the first block region, and is an opening for measuring the irradiation position of the electron beam with respect to the first block region when a part of the first block region is irradiated with the electron beam. 2 measurement patterns, and the exposure mask pattern includes a first direction that is a direction along a predetermined side of the first block region and a part of a second direction that is substantially perpendicular to the first direction. The first measurement pattern is formed along the first direction in the second block region provided adjacent to the first block region in the second direction. The second measurement pattern is formed along the second direction in the third block region provided adjacent to the first block region in the first direction, and the irradiation position measurement unit includes the first measurement region Pass through the measurement pattern and By detecting the cross-sectional shape of the electron beam irradiated on the first block region, the irradiation position of the electron beam in the first direction relative to the first block region is measured, and the cross-sectional shape of the electron beam that has passed through the second measurement pattern is detected. Thus, the irradiation position of the electron beam in the second direction with respect to the first block region is measured, and the deflection control unit applies the electron beam to a part of the first block region based on the irradiation position measured by the irradiation position measurement unit. The amount of deflection in the first direction and the second direction by the deflection unit may be controlled when irradiating.

  According to a third aspect of the present invention, there is provided an electron beam exposure method for exposing a pattern to a wafer using an electron beam, wherein the first rectangular shape having an area substantially equal to the cross-sectional area of the electron beam in the electron beam exposure mask. An exposure mask pattern, which is an opening having a pattern shape to be exposed on the wafer by irradiating the whole or part of the first block area with an electron beam, and in the vicinity of the first block area An electron beam exposure mask formed and having a first measurement pattern that is an opening for measuring an irradiation position of the electron beam to the first block region when the electron beam is irradiated to a part of the first block region. An electron beam exposure apparatus comprising: a step of deflecting the electron beam to pass a part of the first measurement pattern and irradiating the wafer; (C) measuring the irradiation position of the electron beam on the first block region by detecting the cross-sectional shape of the electron beam irradiated on the c, and, based on the measured irradiation position, an electron beam on a part of the first block region Calibrating the amount of deflection of the electron beam, and deflecting the electron beam based on the calibrated amount of deflection to pass through a part of the mask pattern for exposure to irradiate the wafer. Exposing.

  Note that the above summary of the invention does not enumerate all the necessary features of the present invention, and sub-combinations of these feature groups can also be the invention.

  According to the present invention, an electron beam exposure mask capable of significantly increasing the types of patterns that can be exposed on a wafer with one shot of an electron beam, an electron beam exposure apparatus including the electron beam exposure mask, and An electron beam exposure method using the electron beam exposure apparatus can be provided.

  Hereinafter, the present invention will be described through embodiments of the invention. However, the following embodiments do not limit the claimed invention, and all combinations of features described in the embodiments are inventions. It is not always essential to the solution.

  FIG. 1 shows an example of the configuration of an electron beam exposure apparatus 100 according to an embodiment of the present invention. The electron beam exposure apparatus 100 includes an exposure system 150 for exposing a predetermined pattern onto the wafer 64 using an electron beam, and a control system 140 for controlling the operation of each component of the exposure system 150.

  The exposure system 150 deflects the electron beam irradiated from the electron beam irradiation system 110 and the electron beam irradiation system 110 inside the housing 10, and forms an electron beam near the mask 30. A mask projection system 112 for adjusting the position, a focus adjustment lens system 114 for adjusting the imaging position of the electron beam in the vicinity of the wafer 64, and the electron beam passing through the mask 30 on the wafer 64 placed on the wafer stage 62. An electron optical system including a wafer projection system 116 that deflects a predetermined region and adjusts the orientation and size of the pattern image irradiated on the wafer 64 is provided.

  The exposure system 150 includes a mask 30 having a plurality of block regions each having a pattern to be exposed on the wafer 64, a mask stage 72 on which the mask 30 is placed, and a mask stage driving unit that drives the mask stage 72. 68, a wafer stage 62 on which a wafer 64 whose pattern is to be exposed is mounted, a wafer stage drive unit 70 for driving the wafer stage 62, and electrons scattered from the wafer stage 62 side for adjustment of the electron optical system. A backscattered electron detector 60 that detects and outputs an electrical signal corresponding to the detected amount of electrons. The mask 30 is an example of an electron beam exposure mask that shapes the cross-sectional shape of the electron beam of the present invention.

  The electron beam irradiation system 110 is formed with an electron gun 12 that generates an electron beam, a first electron lens 14 that determines a focal position of the electron beam by the electron gun 12, and a rectangular opening that allows the electron beam to pass therethrough. And a first slit portion 16. Since the electron gun 12 takes a predetermined time to generate a stable electron beam, the electron gun 12 may always generate an electron beam during the exposure processing period. In FIG. 1, the optical axis A of the electron beam when the electron beam irradiated from the electron beam irradiation system 110 is not deflected by the electron optical system is indicated by a one-dot chain line.

  The mask projection system 112 includes a first mask deflector 22 and a second mask deflector 26 as mask deflection systems for deflecting an electron beam, and a second electron lens as a mask focus system for adjusting the focus of the electron beam. 20. The first mask deflector 22 and the second mask deflector 26 are examples of the deflecting unit of the present invention. The first mask deflector 22 and the second mask deflector 26 perform deflection by irradiating a predetermined region on the mask 30 with an electron beam. For example, the predetermined area may be a block area having a pattern to be transferred to the wafer 64. As the electron beam passes through the pattern, the cross-sectional shape of the electron beam becomes the same as the pattern formed in the block region. The second electron lens 20 has a function of forming an image of the opening of the first slit portion 16 on the mask 30 placed on the mask stage 72.

  The focus adjustment lens system 114 includes a third electron lens 28 and a fourth electron lens 32. The wafer projection system 116 includes a fifth electron lens 40, a sixth electron lens 46, a seventh electron lens 50, an eighth electron lens 52, a third mask deflector 34, a fourth mask deflector 38, and a main deflector. 56, a sub deflector 58, a blanking electrode 36, and a round aperture portion 48.

  The third electron lens 28 and the fourth electron lens 32 focus the electron beam on the wafer 64. The fifth electron lens 40 adjusts the rotation of the electron beam so that the electron beam is irradiated onto the wafer 64 in a desired direction. The sixth electron lens 46 and the seventh electron lens 50 adjust the reduction rate of the pattern image irradiated on the wafer 64 with respect to the pattern formed on the mask 30. The eighth electron lens 52 functions as an objective lens. The third mask deflector 34 deflects the electron beam in the direction of the optical axis A downstream of the mask 30 with respect to the traveling direction of the electron beam. The fourth mask deflector 38 deflects the electron beam so as to be substantially parallel to the optical axis A. The main deflector 56 and the sub deflector 58 deflect the electron beam so that a predetermined region on the wafer 64 is irradiated with the electron beam.

  The round aperture 48 has a round aperture that is a circular opening. The round aperture unit 48 allows the electron beam irradiated to the inside of the round aperture to pass therethrough and shields the electron beam irradiated to the outside of the round aperture. The blanking electrode 36 deflects the electron beam so as to strike the outside of the round aperture. Therefore, the blanking electrode 36 can prevent the electron beam from traveling downstream from the round aperture 48 by deflecting the electron beam.

  The control system 140 includes an overall control unit 130 and an individual control unit 120. The overall control unit 130 is a workstation, for example, and performs overall control of each control unit included in the individual control unit 120. The overall control unit 130 is an example of an irradiation position detection unit of the present invention. The individual control unit 120 includes an electron gun control unit 80, a mask deflection system control unit 82, a mask stage control unit 84, a blanking electrode control unit 86, an electron lens control unit 88, a wafer deflection system control unit 89, and a reflected electron processing unit 90. And a wafer stage control unit 92. The electron gun control unit 80 controls the electron gun 12. The mask deflection system control unit 82 supplies deflection data indicating the deflection amount to the first mask deflector 22, the second mask deflector 26, the third mask deflector 34, and the fourth mask deflector 38, The deflection amount of the mask deflector 22, the second mask deflector 26, the third mask deflector 34, and the fourth mask deflector 38 is controlled. The mask deflection system control unit 82 is an example of a deflection control unit of the present invention. The mask stage control unit 84 controls the mask stage driving unit 68 to move the mask stage 72.

  The blanking electrode control unit 86 controls the blanking electrode 36 to change the pattern transferred to the wafer 64 or when changing the region of the wafer 64 to which the pattern is exposed, from the round aperture unit 48 to the downstream. The electron beam is deflected so that the electron beam does not travel. This prevents the wafer 64 from being irradiated with the electron beam. The electron lens control unit 88 includes the first electron lens 14, the second electron lens 20, the third electron lens 28, the fourth electron lens 32, the fifth electron lens 40, the sixth electron lens 46, the seventh electron lens 50, and The power supplied to the eighth electron lens 52 is controlled. The wafer deflection system control unit 89 supplies the main deflector 56 and the sub deflector 58 to control the deflection amount of the main deflector 56 and the sub deflector 58. The backscattered electron processing unit 90 outputs digital data indicating the amount of backscattered electrons detected based on the electrical signal detected by the backscattered electron detection unit 60. The wafer stage control unit 92 controls the wafer stage driving unit 70 to move the wafer stage 62 to a predetermined position.

  An operation of the electron beam exposure apparatus 100 according to the present embodiment will be described. On the mask stage 72, a mask 30 having a plurality of regions on which a predetermined pattern is formed is placed and fixed at a predetermined position. On the wafer stage 62, a wafer 64 to be exposed is placed. Further, since the electron gun 12 always irradiates an electron beam during the exposure processing period, blanking electrode control is performed so that the electron beam that has passed through the opening of the first slit portion 16 is not irradiated onto the wafer 64 before the start of exposure. Unit 86 controls blanking electrode 36.

  The electron beam exposure apparatus 100 irradiates the entire block area with an electron beam, and collectively exposes the wafer 64 by transferring a pattern formed in the block area, and irradiates a part of the block area with an electron beam. In some cases, the wafer 64 is exposed by partially transferring a pattern formed in the block region. Therefore, the electron beam exposure apparatus 100 holds the amount of deflection by the first mask deflector 22 and the second mask deflector 26 for each block area, and in addition to the block area where the partially transferred pattern is formed, It is necessary to hold the deflection amount by the first mask deflector 22 and the second mask deflector 26 for each electron beam irradiation position with respect to the block region. Therefore, the electron beam exposure apparatus 100 uses the measurement pattern provided in the vicinity of the block area on which the partially transferred pattern is formed before exposing the wafer 64 to the irradiation position of the electron beam on the block area. , And the amount of deflection by the first mask deflector 22 and the second mask deflector 26 when the pattern formed in the block region is partially transferred is calibrated.

  The electron beam exposure apparatus 100 prepares for exposure of the wafer 64. In the mask projection system 112, the second electron lens 20, the first mask deflector 22, and the second mask deflector 26 irradiate the block region where the pattern to be transferred to the wafer 64 is formed with an electron beam. Adjusted. In the focus adjustment lens system 114, the third electron lens 28 and the fourth electron lens 32 are adjusted so that the electron beam is focused on the wafer 64. In the wafer projection system 116, the fifth electron lens 40, the sixth electron lens 46, the seventh electron lens 50, the eighth electron lens 52, the third mask deflector 34, the fourth mask deflector 38, The deflector 56 and the sub deflector 58 are adjusted so that the electron beam transfers the pattern image to a desired area of the wafer 64.

  When the adjustment of the mask projection system 112, the focus adjustment lens system 114, and the wafer projection system 116 is completed by the above operation, the blanking electrode control unit 86 stops the deflection of the electron beam by the blanking electrode 36. Thereby, as shown below, the electron beam passes through the mask 30 and is irradiated onto the wafer 64. The electron gun 12 generates an electron beam, the first electron lens 14 adjusts the focal position of the electron beam, and the first slit portion 16 shapes the electron beam into a rectangle. Then, the first mask deflector 22 irradiates the whole or a part of the block region of the mask 30 on which the pattern to be transferred to the wafer 64 is formed with the electron beam formed into a rectangle by the first slit portion 16. To deflect. The second mask deflector 26 deflects the electron beam so as to be substantially parallel to the optical axis A. Further, the second electron lens 20 is controlled so that the focus of the electron beam is adjusted so that the rectangular shape formed by the first slit portion 16 forms an image in a predetermined region on the mask 30.

  Then, the electron beam that has passed through the pattern formed on the mask 30 is deflected in a direction approaching the optical axis A by the third mask deflector 34 and is substantially parallel to the optical axis A by the fourth mask deflector 38. To be biased. The third electron lens 28 and the fourth electron lens 32 are adjusted so that the pattern image formed by the mask 30 forms an image on the surface of the wafer 64. The fifth electron lens 40 is adjusted so that the orientation of the pattern image is a desired orientation on the wafer 64. The sixth electron lens 46 and the seventh electron lens 50 are adjusted so that the reduction ratio of the pattern image becomes a desired value. The main deflector 56 and the sub deflector 58 deflect the electron beam so as to irradiate a predetermined shot area on the wafer 64. In the present embodiment, the main deflector 56 deflects the electron beam between subfields including a plurality of shot regions, and the subdeflector 58 deflects the electron beam between shot regions in the subfield. The electron beam deflected to a predetermined shot area is adjusted by the eighth electron lens 52 and irradiated onto the wafer 64. Thereby, the image of the pattern formed on the mask 30 is transferred to a desired shot area on the wafer 64.

  After a predetermined exposure time has elapsed, the blanking electrode control unit 86 deflects the electron beam to the blanking electrode 36 so that the electron beam is not irradiated onto the mask 30 and the wafer 64. Then, the mask deflection system control unit 82, the mask stage control unit 84, the electron lens control unit 88, and the wafer stage control unit 92 are controlled to expose a desired pattern formed on the mask 30 to the next shot area. Then, the mask projection system 112, the focus adjustment lens system 114, the wafer projection system 116, the mask stage drive unit 68, and the wafer stage drive unit 70 are adjusted. The specific operation is the same as the operation of each component described above, and will be omitted. The electron beam exposure apparatus 100 exposes a desired circuit pattern on the wafer 64 by repeatedly executing the above exposure processing.

  According to the electron beam exposure apparatus 100 according to the present embodiment, since the pattern formed in the block region of the mask 30 can be partially transferred and exposed, the types of patterns that can be exposed on the wafer 64 in one shot are greatly increased. Can do. Furthermore, by using a measurement pattern provided in the vicinity of the block region where the partially transferred pattern is formed, the irradiation position of the electron beam to the block region can be calibrated locally and with high accuracy. Therefore, a large number of patterns can be exposed with high accuracy in one shot.

  FIG. 2 shows an example of the configuration of the mask 30 according to the present embodiment. FIG. 2A shows an example of the arrangement of the block area 200 and the variable rectangular area 202. FIG. 2B shows an example of the configuration of the block area 200. FIG. 2C shows an example of an AA cross section of the mask 30 in the block region 200.

  As shown in FIG. 2A, the mask 30 has a plurality of block areas 200 and a plurality of variable rectangular areas 202. In FIG. 2A, the range 204 that can be irradiated on the mask 30 by deflecting the electron beam with the first mask deflector 22 and the second mask deflector 26 is indicated by a broken line. The plurality of block areas 200 are assigned numbers 0 to 99 for identifying each of the block areas 200.

  The block region 200 is a rectangular region having an area substantially equal to the cross-sectional area of the electron beam in the mask 30. The block area 200 has a size of, for example, 300 * 300 μm. As shown in FIGS. 2B and 2C, a part of the plurality of block regions 200 is exposed to the wafer 64 by irradiating the whole or a part of the block region with an electron beam. An exposure mask pattern 206 which is an opening having a pattern shape to be formed is formed. The exposure mask pattern 206 is a so-called stencil pattern. A portion surrounding the exposure mask pattern 206 is a thin film membrane 208 that does not transmit an electron beam. The electron beam passes through the exposure mask pattern 206 so that the cross-sectional shape is formed into the shape of the exposure mask pattern 206.

  Further, the block area of the other part of the plurality of block areas 200 formed in the vicinity of the block area where the exposure mask pattern 206 is formed is one of the block areas where the exposure mask pattern 206 is formed. When the portion is irradiated with an electron beam, a measurement pattern which is an opening for measuring the irradiation position of the electron beam with respect to the block region where the exposure mask pattern 206 is formed is formed.

  The variable rectangular area 202 is a rectangular area having an area substantially equal to the cross-sectional area of the electron beam in the mask 30. In the variable rectangular area 202, a rectangular opening is formed. Using the rectangular opening formed in the variable rectangular area 202, the irradiation position of the electron beam to the variable rectangular area 202, that is, the deflection condition is determined. In addition, a variable rectangular beam is formed from the electron beam formed into a rectangular shape by the first slit portion 16 using a rectangular opening formed in one variable rectangular region 202 of the plurality of variable rectangular regions 202. Then, the wafer 64 is exposed.

  Note that the rectangular opening formed in the variable rectangular area 202 is proportional to the change in the irradiation position of the electron beam on the variable rectangular area 202 and the change in the cross-sectional area of the electron beam passing through the rectangular opening. However, the exposure mask pattern 206 formed in the block region 200 has a change in the irradiation position of the electron beam to the block region 200 and a change in the cross-sectional area of the electron beam passing through the exposure mask pattern. The shape is not proportional.

  FIG. 3 shows three modes of the irradiation position of the electron beam with respect to the block region 200 according to the present embodiment. FIG. 3A shows a case where the irradiation position of the electron beam is changed in the one-dimensional direction in the x direction, which is the first direction along a predetermined side of the block area 200, with respect to the block area 200. FIG. 3B shows a case where the irradiation position of the electron beam is changed in a one-dimensional direction in the y direction, which is a second direction substantially perpendicular to the first direction, with respect to the block region 200. FIG. 3C shows a case where the irradiation position of the electron beam is changed in the two-dimensional direction of the x direction and the y direction with respect to the block region 200.

  In the example of FIG. 3A, the electron beam is deflected to the partial irradiation position 302 specified by the deflection data (sx, sy0) with respect to the block region 200 with reference to the reference irradiation position 300 of the electron beam. . In the example of FIG. 3B, the electron beam is deflected to the partial irradiation position 302 specified by the deflection data (sy0, sx) with respect to the block region 200 with reference to the reference irradiation position 300 of the electron beam. . In the example of FIG. 3C, the electron beam is deflected to the partial irradiation position 302 specified by the deflection data (sx, sy) with respect to the block region 200 with reference to the reference irradiation position 300 of the electron beam. .

  sx is deflection data when an electron beam is irradiated to a part of the block region 200 in the x direction, and sy is deflection data when a part of the block region 200 is irradiated with an electron beam. Further, sx0 and sy0 are constant values, and are deflection data when the entire block area 200 in the x direction or the y direction is irradiated with one shot. sx and sy are deflection data for defining the irradiation position on the mask 30, and are different from the deflection condition and the deflection return condition when the block region 200 is selected for the entire mask 30, and therefore, on the upstream side of the mask 30. It is supplied to the first mask deflector 22 and the second mask deflector 26 arranged, and is not supplied to the third mask deflector 34 and the fourth mask deflector 38 arranged on the downstream side of the mask 30.

  FIG. 4 shows a first example of the arrangement of the block areas 200 according to the present embodiment. FIG. 4A shows a block region 200a where the exposure mask pattern 206a is formed and a block region 200b which is provided adjacent to the −y direction of the block region 200a and where the measurement pattern 400a is formed. . FIG. 4B shows a block region 200a where the exposure mask pattern 206a is formed, and a block region 200c which is provided adjacent to the block region 200a in the y direction and where the measurement pattern 400b is formed.

  An exposure mask pattern 206a shown in FIG. 4A is an opening to be irradiated with an electron beam in a part of the block region 200a in the x direction. The measurement pattern 400a has a narrow slit shape, for example, a rectangular shape, has a length in the longitudinal direction substantially equal to one side in the x direction of the block region 200a, and is substantially parallel to one side in the x direction of the block region 200a. Formed. Further, when the exposure mask pattern 206a is also an opening to be irradiated with an electron beam in a part in the y direction in the block region 200a, the measurement pattern 400a is farthest from the block region 200a in the block region 200b. Preferably, it is formed along the x direction at a certain position. Thereby, even when the irradiation range of the electron beam overlaps the block region 200b, there is no opening in the irradiation range of the electron beam in the block region 200b. Can be formed into a desired cross-sectional shape. Note that the measurement pattern 400a is formed in the block region 200b at a position away from the portion closest to the block region 200b of the exposure mask pattern 206 formed in the block region 200a by at least the irradiation range of the electron beam on the mask 30. May be.

  An exposure mask pattern 206a shown in FIG. 4B is an opening to be irradiated with an electron beam in a part of the block region 200c in the x direction. The measurement pattern 400b has a narrow slit shape, for example, a rectangular shape, and has a length in the longitudinal direction substantially equal to one side in the x direction of the block region 200a and is substantially parallel to one side in the x direction of the block region 200a. Formed. Further, even when the exposure mask pattern 206a is also an opening to be irradiated with an electron beam in a part of the block region 200a in the y direction, the irradiation range of the electron beam does not overlap the block region 200c, that is, When the irradiation range of the electron beam overlaps the block region facing the block region 200c with respect to the block region 200a, the measurement pattern 400a is located in the block region 200b closest to the block region 200a along the x direction. Preferably it is formed. Since the measurement pattern 400b is close to the block region 200a, the irradiation position of the electron beam on the block region 200a can be accurately detected.

  Note that in the case where an electron beam is irradiated to a part of the block region 200a, the block region 200b, or the block region 200c in the x direction, the block adjacent to the block region 200a, the block region 200b, or the block region 200c in the −x direction. The region is irradiated with an electron beam. Therefore, an exposure mask pattern cannot be arranged in a block region adjacent to the block region 200a, the block region 200b, and the block region 200c in the −x direction.

  FIG. 5 shows a second example of the arrangement of the block areas 200 according to the present embodiment. FIG. 5A shows a block region 200a where the exposure mask pattern 206a is formed, and a block region 200d provided adjacent to the −x direction of the block region 200a and where the measurement pattern 500a is formed. . FIG. 5B shows a block region 200a where the exposure mask pattern 206a is formed, and a block region 200e which is provided adjacent to the block region 200a in the x direction and where the measurement pattern 500b is formed.

  An exposure mask pattern 206a shown in FIG. 5A is an opening to be irradiated with an electron beam in a part of the block region 200a in the y direction. The measurement pattern 500a has a narrow slit shape, for example, a rectangular shape, has a length in the longitudinal direction substantially equal to one side in the y direction of the block region 200a, and is substantially parallel to one side in the y direction of the block region 200a. Formed. Further, when the exposure mask pattern 206a is also an opening to be irradiated with an electron beam in a part of the block region 200a in the x direction, the measurement pattern 500a is farthest from the block region 200a in the block region 200d. Preferably, it is formed along the y direction at a different position. As a result, even if the electron beam irradiation range overlaps the block region 200d, there is no opening in the electron beam irradiation range in the block region 200d. Can be formed into a desired cross-sectional shape. The measurement pattern 500a is formed in the block region 200d at a position away from the portion closest to the block region 200d of the exposure mask pattern 206a formed in the block region 200a by the electron beam irradiation range or more in the mask 30. May be.

  An exposure mask pattern 206a shown in FIG. 5B is an opening that is to be irradiated with an electron beam in a part of the block region 200e in the y direction. The measurement pattern 500b has a narrow slit shape, for example, a rectangular shape, the length in the longitudinal direction is substantially equal to one side in the y direction of the block region 200a, and is substantially parallel to one side in the y direction of the block region 200a. Formed. Further, even when the exposure mask pattern 206a is also an opening to be irradiated with an electron beam on a part of the block region 200a in the x direction, the irradiation range of the electron beam does not overlap the block region 200e, that is, When the irradiation range of the electron beam overlaps the block region facing the block region 200e with respect to the block region 200a, the measurement pattern 500a is located in the block region 200e closest to the block region 200a along the y direction. Preferably it is formed. Since the measurement pattern 500b is close to the block region 200a, the irradiation position of the electron beam to the block region 200a can be accurately detected.

  Note that in the case where an electron beam is irradiated to a part of the block region 200a, the block region 200d, or the block region 200e in the y direction, the block adjacent to the block region 200a, the block region 200d, or the block region 200e in the −y direction. The region is irradiated with an electron beam. Therefore, an exposure mask pattern cannot be arranged in a block area adjacent to the block area 200a, the block area 200d, and the block area 200e in the -y direction.

  FIG. 6 shows a third example of the arrangement of the block areas 200 according to the present embodiment. In FIG. 6, a block region 200a in which an exposure mask pattern 206a is formed, a block region 200b in which the measurement pattern 400a is formed and provided adjacent to the block region 200a in the -y direction, and a block region 200a The block region 200d is provided adjacent to the −x direction and has the measurement pattern 500a formed thereon.

  An exposure mask pattern 206a shown in FIG. 6 is an opening to be irradiated with an electron beam in a part of the block region 200a in the x direction and the y direction. The measurement pattern 400a has a narrow slit shape, for example, a rectangular shape, has a length in the longitudinal direction substantially equal to one side in the x direction of the block region 200a, and is substantially parallel to one side in the x direction of the block region 200a. Formed. The measurement pattern 500a has a narrow slit shape, for example, a rectangular shape, and has a length in the longitudinal direction substantially equal to one side in the y direction of the block region 200a and on one side in the y direction of the block region 200a. It is formed substantially in parallel.

  Furthermore, the measurement pattern 400a is preferably formed along the x direction at a position farthest from the block region 200a in the block region 200b. The measurement pattern 500a is preferably formed along the y direction at a position farthest from the block region 200a in the block region 200d. As a result, even when the irradiation range of the electron beam overlaps the block region 200b or 200d, there is no opening in the irradiation region of the electron beam in the block region 200b or d, so a part of the exposure mask pattern 206a is used. Thus, the electron beam can be formed into a desired cross-sectional shape. Note that the measurement patterns 400a and 500a are equal to or larger than the electron beam irradiation range on the mask 30 from the portion closest to the block region 200b or d of the exposure mask pattern 206a formed in the block region 200a in the block region 200a or 200d. It may be formed at a distant position.

  As described above, the block region 200a in which the exposure mask pattern 206a is formed, the block region 200b in which the measurement pattern 400a is formed, and the block region 200d in which the measurement pattern 500a is formed are arranged. The area where the mask pattern cannot be arranged can be minimized. In addition, when the electron beam is irradiated to the block region 200a and when the electron beam is irradiated to the block region 200b or 200d adjacent to the block region 200a, the first mask deflector 22 and the second mask deflector based on the deflection data are used. 26, the actual deflection amounts substantially coincide with each other. Therefore, by using the measurement pattern 400a or 500a to obtain the deflection condition when irradiating a part of the block region 200a with the electron beam, a sufficiently accurate deflection condition can be obtained. Can be sought.

  FIG. 7 shows an example of the configuration of the mask deflection system control unit 82 according to the present embodiment. The mask deflection system control unit 82 includes a first partial irradiation deflection data calculation unit 700, a first total irradiation deflection data calculation unit 702, a second partial irradiation deflection data calculation unit 704, a second total irradiation deflection data calculation unit 706, and a third. A total irradiation deflection data calculation unit 708, a fourth total irradiation deflection data calculation unit 710, a first adder 712, and a second adder 714 are provided.

  The mask deflection system control unit 82 receives partial irradiation deflection data (sx, sy) and total irradiation deflection data (Mx, My) from the overall control unit 130. Here, the partial irradiation deflection data is deflection data for each of the plurality of block regions 200, which is determined for each electron beam irradiation position in the block region 200 and determines the electron beam irradiation position in the block region 200. is there. Further, the total irradiation deflection data is deflection data that defines a block area 200 used for exposure, which is determined for each of a plurality of block areas 200.

  The first partial irradiation deflection data calculation unit 700 calculates and processes the partial irradiation deflection data (sx, sy) supplied from the overall control unit 130 using the partial irradiation deflection efficiency constants (A1, B1). A partial irradiation deflection output (sx * A1 + sy * B1) is output. Further, the first total irradiation deflection data calculation unit 702 calculates the total irradiation deflection data (Mx, My) supplied from the overall control unit 130 using the total irradiation deflection efficiency constants (C1, D1), and performs digital processing. The entire irradiation deflection output (Mx * C1 + My * D1) of the signal is output. The first adder 712 adds and outputs the partial irradiation deflection output output from the first partial irradiation deflection data calculation unit 700 and the total irradiation deflection output output from the first total irradiation deflection data calculation unit 702. . The first DAC / AMP unit 716 converts the output of the first adder 712 into an analog signal and amplifies it, and supplies power to the first mask deflector 22.

  The second partial irradiation deflection data calculation unit 704 calculates and processes the partial irradiation deflection data (sx, sy) supplied from the overall control unit 130 using the partial irradiation deflection efficiency constants (A2, B2). A partial irradiation deflection output (sx * A2 + sy * B2) is output. The second total irradiation deflection data calculation unit 706 calculates the total irradiation deflection data (Mx, My) supplied from the overall control unit 130 using the total irradiation deflection efficiency constants (C2, D2), and performs digital processing. The entire irradiation deflection output (Mx * C2 + My * D2) of the signal is output. The second adder 714 adds the partial irradiation deflection output output from the second partial irradiation deflection data calculation unit 704 and the total irradiation deflection output output from the second total irradiation deflection data calculation unit 706 and outputs the result. . Then, the second DAC / AMP unit 718 converts the output of the second adder 714 into an analog signal and amplifies it, and supplies power to the second mask deflector 26.

  The first mask deflector 22 deflects the electron beam in a direction different from the optical axis A based on the power supplied from the first DAC / AMP unit 716, and the second mask deflector 26 includes the second DAC / AMP unit Based on the power supplied from 718, the electron beam is deflected so as to be substantially parallel to the optical axis A. Then, the first mask deflector 22 and the second mask deflector 26 irradiate the whole or part of the exposure mask pattern 206 or a part of the measurement pattern 400 with an electron beam to pass through.

  The third total irradiation deflection data calculation unit 708 calculates the total irradiation deflection data (Mx, My) supplied from the overall control unit 130 using the total irradiation deflection efficiency constants (C3, D3), and outputs a digital signal. The total irradiation deflection output (Mx * C3 + My * D3) is output. Then, the third DAC / AMP unit 720 converts the entire irradiation deflection output output from the third entire irradiation deflection data calculation unit 708 into an analog signal, amplifies it, and supplies power to the third mask deflector 34.

  The fourth total irradiation deflection data calculation unit 710 calculates the total irradiation deflection data (Mx, My) supplied from the overall control unit 130 using the total irradiation deflection efficiency constants (C4, D4), and outputs a digital signal. The total irradiation deflection output (Mx * C4 + My * D4) is output. Then, the fourth DAC / AMP unit 722 converts the entire irradiation deflection output output from the fourth entire irradiation deflection data calculation unit 710 into an analog signal, amplifies it, and supplies power to the fourth mask deflector 38.

  The third mask deflector 34 deflects the electron beam back in the direction of the optical axis A based on the electric power supplied from the third DAC / AMP unit 720, and the fourth mask deflector 38 includes the fourth DAC / AMP. Based on the power supplied from the AMP unit 722, the electron beam is deflected so as to be substantially parallel to the optical axis A.

  As described above, the first mask deflector 22 is based on the partial irradiation deflection data determined for each electron beam irradiation position in the block region 200 in addition to the overall irradiation deflection data determined for each of the plurality of block regions 200. Further, by controlling the amount of deflection of the electron beam by the second mask deflector 26, it is possible to accurately irradiate a part of the block region 200 with the electron beam, so that a desired part of the exposure mask pattern 206 is used. This pattern can be exposed on the wafer 64.

  FIG. 8 shows an example of a flow of an electron beam exposure method by the electron beam exposure apparatus 100 according to the present embodiment. The electron beam exposure method according to the present embodiment includes an exposure data analysis stage (S800) for analyzing exposure data, and a measurement pattern for deflecting the electron beam and passing a part of the measurement pattern 400a to irradiate the wafer 64. An irradiation step (S802), an irradiation position measurement step (S804) for measuring the irradiation position of the electron beam on the block region 200a by detecting the cross-sectional shape of the electron beam irradiated on the wafer 64, and the measured irradiation position. Based on the deflection amount calibration step (S806) for calibrating the deflection amount of the electron beam when irradiating a part of the block region 200a with the electron beam, the exposure is performed by deflecting the electron beam based on the calibrated deflection amount. An exposure step (S) in which the wafer 64 is exposed by passing a part of the mask pattern 206a and irradiating the wafer 64 with the mask pattern 206a. 08) and a.

  In the exposure data analysis step (S800), the overall control unit 130 analyzes the exposure data for exposing the wafer 64 and provides a portion of the deflection data to be supplied to the first mask deflector 22 and the second mask deflector 26. It is determined whether irradiation deflection data is included. When the partial irradiation deflection data is included, the overall control unit 130 positions the block 30a in the mask 30 in which the exposure mask pattern 206a irradiated based on the partial irradiation deflection data is formed, and the block. Partial irradiation exposure data indicating irradiation of an electron beam to a part of the region 200a in the x direction, partial irradiation exposure data indicating irradiation of an electron beam to a part of the y direction, or the x direction of the block region 200a And partial irradiation exposure data indicating that a part of the y direction is irradiated with an electron beam.

  In the measurement pattern irradiation step (S802), the first mask deflector 22 and the second mask deflector 26 deflect the electron beam based on the partial irradiation deflection data sx, and apply the electron beam to a part of the measurement pattern 400a. Irradiate and pass. The wafer 64 is irradiated with the electron beam that has passed through the measurement pattern 400a. The first mask deflector 22 and the second mask deflector 26 deflect the electron beam based on the partial irradiation deflection data sy, and irradiate and pass the electron beam to a part of the measurement pattern 500a. The wafer 64 is irradiated with the electron beam that has passed through the measurement pattern 500a.

  In the irradiation position measurement step (S804), the main deflector 56 deflects the electron beam that has passed through each of the measurement patterns 400a and 500a, and a mark provided on the wafer 64 or the wafer stage 62, for example, a metal such as tungsten. The fine line pattern formed in is scanned. The backscattered electron detector 60 detects backscattered electrons from a mark provided on the wafer 64 or the wafer stage 62, and the backscattered electron processing section 90 is based on the backscattered electron distribution detected by the backscattered electron detector 60. Thus, the cross-sectional shape of the electron beam irradiated on the wafer 64 through the measurement patterns 400a and 500a, for example, the length in the longitudinal direction is detected. Then, the overall control unit 130 measures the irradiation position of the electron beam on the block region 200a based on the cross-sectional shape of the electron beam detected by the backscattered electron processing unit 90. Then, the mask deflection system control unit 82 irradiates a part of the block region 200a with the electron beam based on the electron beam irradiation position measured by the overall control unit 130. The deflection amount of the mask deflector 26 is controlled.

  Specifically, the first mask deflector 22 and the second mask deflector 22 are set to (A1, B1) and the second mask deflector 26 is set to (A2, B2). The mask deflector 26 deflects the electron beam based on the partial irradiation deflection data (sx, sy) and passes the measurement patterns 400a and 500a to irradiate the wafer 64. Then, the reflected electron processing unit 90 measures that the length in the longitudinal direction of the electron beam that has passed through the measurement pattern 400a is Lx, and the length in the longitudinal direction of the electron beam that has passed through the measurement pattern 500a is Ly. Suppose that it is measured. In this case, the overall control unit 130 determines that the longitudinal length of the electron beam on the wafer 64 is an ideal length based on the longitudinal length (Lx, Ly) of the electron beam measured by the backscattered electron processing unit 90. Then, the deflection efficiency constants (A1 ′, B1 ′) of the first mask deflector 22 and the deflection efficiency constants (A2 ′, B2 ′) of the second mask deflector 26 are calculated. Then, the overall control unit 130 sets the newly calculated deflection efficiency constant in the first mask deflector 22 and the second mask deflector 26.

  In the deflection amount calibration step (S806), the mask deflection system control unit 82 calculates the deflection efficiency constant (A1 ′, A1 ′) of the first mask deflector 22 calculated by the overall control unit 130 based on the irradiation position of the electron beam with respect to the block region 200a. B1 ′) and the second mask deflector 26 based on the deflection efficiency constants (A2 ′, B2 ′), the first mask deflector 22 and the second mask when a part of the block region 200a is irradiated with an electron beam. The amount of deflection in the x and y directions by the deflector 26 is controlled.

  In the exposure step (S808), the first mask deflector 22 deflects the electron beam based on the deflection amount calibrated using the deflection efficiency constants (A1 ′, B1 ′), and the second mask deflector 26. Deflects the electron beam based on the deflection amount calibrated using the deflection efficiency constants (A2 ′, B2 ′). Then, the first mask deflector 22 and the second mask deflector 26 deflect the electron beam, pass a part of the exposure mask pattern 206a and irradiate the wafer 64 with the electron beam, thereby exposing the wafer 64 for exposure. A pattern using a part of the mask pattern 206a is exposed.

  According to the electron beam exposure method of the present embodiment, the first mask deflector 22 and the measurement patterns 400a and 500a provided in the vicinity of the block region 200a where the exposure mask pattern 206a to be exposed is formed are used. By determining the deflection efficiency constant set in the second mask deflector 26, it is possible to accurately irradiate a part of the block region 200a with the electron beam. Therefore, a pattern using a part of the exposure mask pattern 206a can be exposed with high accuracy. Therefore, the number of types of patterns that can be exposed on the wafer 64 with one shot of the electron beam can be greatly increased with respect to the number of block regions 200 formed on the mask 30, that is, the number of mask patterns 206 for exposure. it can.

  As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. Various modifications or improvements can be added to the above embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

1 is a diagram showing an example of the configuration of an electron beam exposure apparatus 100. FIG. 3 is a diagram illustrating an example of a configuration of a mask 30. FIG. It is a figure which shows the irradiation position of the electron beam with respect to the block area | region 200. FIG. 5 is a diagram illustrating a first example of an arrangement of block areas 200. FIG. It is a figure which shows the 2nd example of arrangement | positioning of the block area | region 200. FIG. It is a figure which shows the 3rd example of arrangement | positioning of the block area | region 200. FIG. 5 is a diagram illustrating an example of the configuration of a mask deflection system control unit 82. FIG. It is a figure which shows an example of the flow of an electron beam exposure method.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Case 12 Electron gun 14 1st electron lens 16 1st slit part 20 2nd electron lens 22 1st mask deflector 26 2nd mask deflector 28 3rd electron lens 30 Mask 32 4th electron lens 34 3rd mask deflection Device 36 blanking electrode 38 fourth mask deflector 40 fifth electron lens 46 sixth electron lens 48 round aperture unit 50 seventh electron lens 52 eighth electron lens 56 main deflector 58 sub deflector 60 backscattered electron detector 62 wafer Stage 64 Wafer 68 Mask stage drive unit 70 Wafer stage drive unit 72 Mask stage 80 Electron gun control unit 82 Mask deflection system control unit 84 Mask stage control unit 86 Blanking electrode control unit 88 Electronic lens control unit 89 Wafer deflection system control unit 90 Reflected electron processing unit 92 Wafer stage control unit 100 Electron beam exposure 110 Electron beam irradiation system 112 Projection system for mask 114 Focus adjustment lens system 116 Projection system for wafer 120 Individual control unit 130 Overall control unit 140 Control system 150 Exposure system 200 Block region 202 Variable rectangular region 204 Irradiable range 206 Exposure mask Pattern 208 Membrane 300 Reference irradiation position 302 Partial irradiation position 400 Measurement pattern 500 Measurement pattern 700 First partial irradiation deflection data calculation unit 702 First total irradiation deflection data calculation unit 704 Second partial irradiation deflection data calculation unit 706 Second total Irradiation deflection data calculator 708 Third overall irradiation deflection data calculator 710 Fourth overall irradiation deflection data calculator 712 First adder 714 Second adder 716 First DAC / AMP unit 718 Second DAC / AMP unit 720 Third DAC / AMP Part 722 4th DAC / The MP unit

Claims (10)

In an electron beam exposure apparatus that exposes a pattern on a wafer using an electron beam, an electron beam exposure mask for shaping a cross-sectional shape of the electron beam,
By forming the first block region in a rectangular shape having an area substantially equal to the cross-sectional area of the electron beam in the electron beam exposure mask and irradiating the whole or a part of the first block region with the electron beam. An exposure mask pattern which is an opening of a pattern shape to be exposed on the wafer;
A first opening that is formed in the vicinity of the first block region and that measures an irradiation position of the electron beam with respect to the first block region when a part of the first block region is irradiated with the electron beam. An electron beam exposure mask having a measurement pattern.   2. The first measurement pattern is formed in a rectangular second block region adjacent to the first block region and having an area substantially equal to a cross-sectional area of the electron beam in the electron beam exposure mask. 2. An electron beam exposure mask according to 1.   2. The electron beam according to claim 1, wherein the first measurement pattern has a rectangular shape, a length in a longitudinal direction is substantially equal to one side of the first block region, and is formed substantially parallel to the one side. Mask for exposure. The exposure mask pattern is an opening to be irradiated with the electron beam in a part of a first direction along a predetermined side of the first block region,
The first measurement pattern is farthest from the first block region in a second block region provided adjacent to the first block region in a second direction substantially perpendicular to the first direction. The electron beam exposure mask according to claim 1, wherein the mask is formed along the first direction at a predetermined position. A second opening that is formed in the vicinity of the first block region and that measures an irradiation position of the electron beam with respect to the first block region when the electron beam is irradiated onto a part of the first block region. It further has a measurement pattern,
The exposure mask pattern is irradiated with the electron beam in a first direction which is a direction along a predetermined side of the first block region and a part of a second direction substantially perpendicular to the first direction. Is the opening to be done
In the second block area provided adjacent to the first block area in the second direction, the first measurement pattern has the first direction at a position farthest from the first block area. Formed along
In the third block area provided adjacent to the first block area in the first direction, the second measurement pattern is arranged in the second direction at a position farthest from the first block area. The electron beam exposure mask according to claim 1, formed along the line. An electron beam exposure apparatus that exposes a pattern on a wafer using an electron beam,
An electron beam exposure mask for forming a cross-sectional shape of the electron beam;
The electron beam exposure mask is
By forming the first block region in a rectangular shape having an area substantially equal to the cross-sectional area of the electron beam in the electron beam exposure mask and irradiating the whole or a part of the first block region with the electron beam. An exposure mask pattern which is an opening of a pattern shape to be exposed on the wafer;
A first opening that is formed in the vicinity of the first block region and that measures an irradiation position of the electron beam with respect to the first block region when a part of the first block region is irradiated with the electron beam. An electron beam exposure apparatus comprising a measurement pattern. A deflecting unit that deflects the electron beam and irradiates and passes the electron beam to a part of the first measurement pattern;
An irradiation position measuring unit that measures an irradiation position of the electron beam with respect to the first block region by detecting a cross-sectional shape of the electron beam irradiated on the wafer through the first measurement pattern;
A deflection control unit for controlling a deflection amount of the electron beam by the deflection unit when irradiating the electron beam to a part of the first block region based on the irradiation position measured by the irradiation position measurement unit; The electron beam exposure apparatus according to claim 6, further comprising: The exposure mask pattern is an opening to be irradiated with the electron beam in a part of a first direction which is a direction along a predetermined side of the first block region,
The first measurement pattern is formed along the first direction in a second block region provided adjacent to the first block region in a second direction substantially perpendicular to the first direction. And
The irradiation position measurement unit detects a cross-sectional shape of the electron beam that has passed through the first measurement pattern and is applied to the wafer, so that the electron beam in the first direction with respect to the first block region is detected. Measure the irradiation position of
The deflection control unit deflects the first direction by the deflecting unit when irradiating the electron beam to a part of the first block region based on the irradiation position measured by the irradiation position measuring unit. 8. The electron beam exposure apparatus according to claim 7, wherein the amount is controlled. The exposure mask pattern is formed in the vicinity of the first block region, and measures the irradiation position of the electron beam with respect to the first block region when irradiating the electron beam to a part of the first block region. A second measurement pattern that is an opening for,
The exposure mask pattern is irradiated with the electron beam in a first direction which is a direction along a predetermined side of the first block region and a part of a second direction substantially perpendicular to the first direction. Is the opening to be done
The first measurement pattern is formed along the first direction in a second block region provided adjacent to the first block region in the second direction,
The second measurement pattern is formed along the second direction in a third block region provided adjacent to the first block region in the first direction,
The irradiation position measurement unit detects a cross-sectional shape of the electron beam that has passed through the first measurement pattern and is applied to the wafer, so that the electron beam in the first direction with respect to the first block region is detected. And measuring the irradiation position of the electron beam in the second direction with respect to the first block region by detecting the cross-sectional shape of the electron beam that has passed through the second measurement pattern,
The deflection control unit is configured to irradiate a part of the first block region with the electron beam based on the irradiation position measured by the irradiation position measurement unit, The electron beam exposure apparatus according to claim 7, wherein the amount of deflection in the second direction is controlled. An electron beam exposure method for exposing a pattern to a wafer using an electron beam,
By forming the first block region in a rectangular shape having an area substantially equal to the cross-sectional area of the electron beam in the electron beam exposure mask and irradiating the whole or a part of the first block region with the electron beam. An exposure mask pattern, which is an opening having a pattern shape to be exposed on the wafer, is formed in the vicinity of the first block region, and when the electron beam is irradiated to a part of the first block region, the first In an electron beam exposure apparatus comprising an electron beam exposure mask having a first measurement pattern that is an opening for measuring an irradiation position of the electron beam with respect to a block region,
Deflecting the electron beam to pass a portion of the first measurement pattern to irradiate the wafer;
Measuring the irradiation position of the electron beam with respect to the first block region by detecting a cross-sectional shape of the electron beam irradiated on the wafer;
Calibrating the deflection amount of the electron beam when irradiating the electron beam to a part of the first block region based on the measured irradiation position;
An electron beam exposure method comprising: exposing the wafer by deflecting the electron beam based on the calibrated deflection amount and passing a part of the exposure mask pattern to irradiate the wafer.

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