JP2005122347A - Semiconductor device, and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a highly reliable non-contact type semi-conductor at a low cost, which does not cause deformation of an antenna when carried during a manufacturing process by constituting the antenna part with a lead frame and metallic wire. <P>SOLUTION: A lead 3 for guiding an antenna wire is arranged at an arbitrary position on the lead frame 7. The metallic wire 2b connected to an electrode on an IC chip 1 by a wire bonding method is arranged in a coil shape to form the antenna, while the wire 2b passing the tip ends of the antenna wire guiding leads 3 formed in a hook shape as a bending point. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device, and more particularly to a semiconductor device having a non-contact configuration for transmitting and receiving signals to and from a reader / writer wirelessly and a method for manufacturing the semiconductor device.

  Non-contact type semiconductor devices used in the shape of card type, tag type, etc., which have been developed and spread in recent years, perform the supply of power from a reader / writer and the transmission / reception of signals wirelessly. There is essentially no wear or damage due to contact with external terminals as in the case of equipment, and it is thought that it will become increasingly popular in the future due to ease of handling and high security functions.

  An example of a non-contact IC tag which is an example of a conventional non-contact type semiconductor device will be described with reference to the drawings.

  FIG. 12 is a block diagram of a conventional non-contact IC tag. In this IC tag, a metal wire coil is used as an antenna, 21 is an IC chip, 22 is a wiring board, 23 is a first lead, and 24 is a first lead. 2 is an IC chip mounting portion, 26 is a metal wire, 29 is a metal wire coil, 27 is a sealing resin, and 28 is an exterior resin.

  In this IC tag, the semiconductor chip 21 is mounted on the IC chip mounting portion 25 of the wiring substrate 22, the first terminal of the IC chip 21 and the internal terminal of the first lead 23 are connected to each other by the wire 26, and the semiconductor chip The second terminal and the internal terminal of the second lead 24 are connected by a metal wire 26, and these are sealed by a sealing resin 27.

  On the other hand, the first terminal of the metal wire coil 29 is solder-connected to the external terminal of the first lead 23 of the wiring board 22, and the second terminal of the metal wire coil 29 is connected to the second lead 24 of the wiring board 22. Soldered to external terminals.

  These components are finally molded with the exterior resin 28 and formed into the shape of a non-contact IC tag (see, for example, Patent Document 1).

With this configuration, the IC tag can cause the metal wire coil 29 to function as an antenna, and thus can communicate with the reader / writer in a non-contact manner.
JP 2001-52137 A

However, the conventional non-contact type semiconductor device has a problem that the manufacturing cost increases as a result for the following reason.
(1) There are many constituent materials, such as a wiring board, a metal wire coil, sealing resin, and exterior resin.
(2) The process such as connection between the circuit board and the metal wire coil or molding with an exterior resin is complicated.
(3) Since the handling (dividing and packaging) of the substrate takes time, the process cost becomes expensive.
(4) The wiring board is expensive.

  As a countermeasure for this problem, there is a non-contact IC tag having a configuration in which a metal wire coil is not required by using a wiring board on which a coiled antenna circuit is formed in advance by patterning. However, in this case, since the antenna circuit is formed, the substrate size is increased, and the substrate cost is further increased.

  In order to minimize the package cost, it is ideal to use a plastic mold package used in a normal semiconductor package. However, it is very difficult to make a non-contact IC tag with a conventional plastic mold package.

  This is because the communication distance of the antenna by the coil tends to be proportional to the number of turns and the diameter of the coil, but when forming the coil with lead wires, the lead length becomes longer if the number of turns and the diameter of the coil are increased. Therefore, due to insufficient strength of the lead wires, the coil shape is easily deformed or short-circuited due to the sealing resin during transfer molding or handling, and the characteristics become unstable.

  For this reason, it has been difficult to form an antenna circuit indispensable for a non-contact IC tag in a conventional plastic mold package.

  Therefore, an object of the present invention is to solve such problems and provide a non-contact type semiconductor device using a low-cost plastic mold package and a method for manufacturing the same.

  In order to solve the above problems, a semiconductor device of the present invention includes an IC chip mounted on a lead frame, a radio communication antenna having both ends connected to a mounting portion of the IC chip, and a resin mold. In this semiconductor device, the antenna is made of a metal wire.

  Specifically, in the semiconductor device of the present invention, a plastic mold package having an antenna circuit is formed by the following method.

  That is, the antenna wire guide leads having hook-shaped tip portions that hook and fix the metal wire around the chip mounting portion on which the semiconductor chip is mounted are provided radially, and the metal wire connected to one of the electrodes of the semiconductor chip, A coil-shaped circuit is formed around the semiconductor chip by continuously stretching it while passing through the wire guide leads in order, and connecting to the electrode of the other chip. Then, the semiconductor chip, chip mounting portion, lead group, After sealing the wire group with a sealing resin, the plastic mold package having the coiled antenna circuit is formed by separating the resin mold body from the lead frame outer frame portion.

  As described above, in the semiconductor device of the present invention, the coiled antenna circuit formed of metal wire is bent at the bending point by the tension of the metal wire and the antenna wire guiding lead having the hook-shaped tip before resin molding. Since it is held and completely fixed and protected by the cured resin after resin molding, even if the number of turns of the coil formed of metal wire increases, during conveyance or handling in the process after wire bonding, The coil is not deformed, disconnected, or short-circuited, and a non-contact type semiconductor device can be manufactured with a plastic mold package that is extremely inexpensive and suitable for mass production.

  According to the present invention, an antenna circuit is formed from a lead frame and a wire, and the antenna portion can be kept in a stable shape even during transport during the manufacturing process. Therefore, all the processes are the same as a conventional inexpensive plastic package. It is possible to manufacture a non-contact type semiconductor device with technology, equipment, and materials, and to provide a non-contact type semiconductor device that is very high quality, low cost, and suitable for mass production.

  Hereinafter, a semiconductor device and a manufacturing method thereof according to the present invention will be described with reference to the drawings.

(First embodiment)
FIG. 1 is a perspective view showing a state where an IC chip and a metal wire are mounted on a lead frame applied to manufacture of a semiconductor device according to the first embodiment of the present invention, and FIG. 2B is a cross-sectional view of FIG. 2A, FIG. 3 is a plan view showing the internal structure of the semiconductor device according to the first embodiment, and FIG. 4 is a semiconductor device according to the first embodiment. FIG.

  The steps of the manufacturing method according to the first embodiment will be described with reference to FIGS.

  (1 ′) Processing a metal plate by an etching method or a press method, an IC chip mounting portion 4, a plurality of antenna wire guiding leads 3 having a hook shape at the tip, two metal wire relay leads 5, A lead frame 7 having an outer frame portion 7a is prepared.

  (2 ′) The IC chip 1 is mounted on the IC chip mounting portion 4 of the lead frame 7.

  (3 ′) The electrode portion of the IC chip 1 and the metal wire relay lead 5 are connected by the metal wire 2a by the wire bonding method.

  (4 ′) After the first wire bond is made to one of the metal wire relay leads 5 by the wire bonding method, the metal wire 2b is led out in a tensioned state, while the hooked tip of the antenna wire guiding lead 3 is After the bonding head is rotated one or more times so that the metal wire 2b forms a loop so as to pass the outside, a second wire bond is performed on the other of the metal wire relay leads 5. At this time, by moving the bonding head while applying tension to the metal wire 2b, the metal wire 2b is held at the hook-shaped tip of the antenna wire guiding lead 3. Thereby, an antenna coil is formed by the metal wire 2b.

  (5 ′) The inside of the outer frame portion 7a of the lead frame 7 is sealed with resin. A two-dot chain line 6 in the figure indicates a resin sealing portion boundary line.

  (6 ′) At the resin sealing portion boundary line 6, the resin mold portion and the outer frame portion 7 a of the lead frame 7 are separated.

  Through the steps (1 ′) to (6 ′), the first embodiment of the semiconductor device according to the present invention shown in FIGS. 3 and 4 is completed.

  Here, the metal plate material used in the step (1 ′) of preparing the lead frame 7 is preferably a copper alloy or an iron-nickel alloy, and the thickness is preferably set in the range of 0.05 to 0.5 mm. The antenna wire guiding leads 3 are all independently connected to the outer frame portion 7a of the lead frame 7, but the tip portion receives an inward tension from the metal wire 2b when the antenna is formed. It becomes a point. For this reason, the portion in contact with the metal wire 2b is formed in a bowl shape that rises in a substantially vertical direction with respect to the lead frame surface.

  Further, in the step of preparing the lead frame 7 of (1 ′), in the first embodiment, the tip portion 3a of the antenna wire guiding lead 3 is almost made with respect to the lead frame surface as shown in FIG. It is formed by bending in the vertical direction.

  At this time, it is desirable to set the bending angle at which the wire itself does not come off due to the tension of the metal wire 2b to an angle of 70 degrees (acute angle) to 100 degrees (obtuse angle) with the lead frame surface. If it is 70 degrees or less, it is difficult to guide the wire to a predetermined position while moving the bonding head. If it is 100 degrees or more, there is a high risk that the wire will come off the lead tip due to the tension acting inside the wire. Become.

  In addition, although each position of the front-end | tip part of the lead 3 for antenna wire guidance is drawn so that an antenna coil may form a substantially square loop in FIGS. 1-3, the frequency characteristic of a radio signal, the sensitivity of transmission / reception, a semiconductor It can be designed at an arbitrary position in consideration of the size of the apparatus.

  (2 ') the step of mounting the IC chip 1, (3') the step of connecting the electrode of the IC chip 1 and the metal wire relay lead 5 with the metal wire 2a, (4 ') the antenna coil with the metal wire 2b The order of forming the steps can be changed.

  The metal wires 2a and 2b used in the step of connecting the electrode of the IC chip 1 of (3 ′) and the metal wire relay lead 5 by the metal wire 2a and the step of forming the antenna coil by the metal wire 2b of (4 ′) are: It is desirable to use a metal material such as gold, copper, and aluminum, and to set the wire diameter in the range of 15 to 300 μm. Further, the metal wires 2a and 2b may have the same material and the same wire diameter, or different materials and different wire diameters. Considering the performance as a semiconductor device and the frequency characteristics of the radio signal, the optimum material and wire diameter are selected.

  Moreover, the metal wires 2a and 2b can also use the covering wire by which the circumference | surroundings were covered with the insulating film. In this case, in particular, when forming an antenna wound with a plurality of coil coils, insulation is maintained even if adjacent wires come into contact with each other. Wire 2b can be wound and size reduction becomes easy.

  In addition, by using the covered wire, even if the inner antenna wire guiding lead and the outer wire are in contact with each other at the intersecting portion, the wire is not short-circuited, and the thickness can be easily reduced.

  As described above, according to the first embodiment, the antenna circuit can be formed from the lead frame and the wire, and the antenna portion can be kept in a stable shape even during transportation during the manufacturing process. A contactless semiconductor device can be realized using the same technology, equipment, and materials as an inexpensive plastic package.

(Second Embodiment)
FIGS. 5A and 5B are a plan view and a cross-sectional view showing a state where an IC chip and a metal wire are mounted on a lead frame applied to manufacture of a semiconductor device according to the second embodiment, and FIG. It is sectional drawing which shows the internal structure of the semiconductor device which concerns on this embodiment.

  The steps of the manufacturing method according to the second embodiment will be described with reference to FIG.

  (1 ″) A lead frame 7 which is formed by processing a metal plate by an etching method or a press method, and has an IC chip mounting portion 4, a plurality of antenna wire guiding leads 3 whose tips are hook-shaped, and an outer frame portion 7a. Prepare.

  (2 ″) The IC chip 1 is mounted on the IC chip mounting portion 4 of the lead frame 7.

  (3 ″) The hooked tip of the antenna wire guiding lead 3 while the metal wire 2c is led out in a tensioned state after the first wire bond to one of the electrode parts of the IC chip 1 by wire bonding. After the bonding head is rotated one or more times so that the metal wire 2c forms a loop so as to pass the outside of the part, a second wire bond is performed on the other electrode part of the IC chip 1. At this time, by moving the bonding head while applying tension to the metal wire 2 c, the metal wire 2 c is held at the hook-shaped tip of the antenna wire guiding lead 3. Thereby, an antenna coil is formed with the metal wire 2c.

  (4 ″) The inside of the outer frame portion 7a of the lead frame 7 is sealed with resin.

  (5 ″) The resin mold part and the outer frame part 7 a of the lead frame 7 are separated.

  Through the steps (1 ″) to (5 ″), the second embodiment of the semiconductor device according to the present invention shown in FIG. 6 is completed.

  At this time, in the step of preparing the lead frame of (1 ″), it is desirable that the IC chip mounting portion 4 is disposed so as to exist at a position where the antenna coil is formed between the electrode portions of the IC chip 1. Thereby, the metal wire 2c derived | led-out from the electrode part of IC chip 1 does not cross | intersect the wire which draws an antenna coil, and can prevent the malfunction by a wire short circuit.

  In addition, the setting of the lead frame material and thickness, the setting of the tip shape and arrangement of the antenna wire guiding lead 3, the setting of the metal wire material and wire diameter, and the use of the covered wire are the same as in the first embodiment.

  As described above, according to the second embodiment, the antenna circuit can be formed from the lead frame and the wire, and the antenna portion can be kept in a stable shape even during conveyance during the manufacturing process, and the wire bonding process can be performed once. Therefore, it becomes possible to realize a non-contact type semiconductor device using all the processes of the conventional inexpensive plastic package technology, equipment, and materials.

(Third embodiment)
FIG. 8 is a cross-sectional view of a leading end portion of a lead for guiding an antenna wire in a lead frame applied to manufacture of a third embodiment of a semiconductor device according to the present invention.

  In the first embodiment and the second embodiment, the wire antenna guiding leads 3 are all independently connected to the outer frame portion 7 a of the lead frame 7. For this reason, the antenna wire guiding lead 3 that holds the metal wires 2b and 2c as the inner antenna wires has a three-dimensional crossing relationship with the metal wires 2b and 2c that circulate outward.

  For this reason, when the antenna wire is arranged at a position lowered to the height of the upper surface of the lead frame, there is a risk that the intersecting antenna wire and the lead come into contact with each other and the inner antenna wire and the outer antenna wire are short-circuited.

  In the third embodiment, as shown in FIG. 8, when the tip 3b of the antenna wire guiding lead 3 is processed into a bowl shape, it is bent in multiple stages.

  As a result, the metal wires 2b and 2c, which are antenna wires, do not loosen due to the inward tension, so that they do not fall down from the taper portion of the lead bent portion, and always from the height of the upper surface of the lead frame 7. A certain height or more can be maintained, and a more reliable non-contact type semiconductor device can be realized than in the first and second embodiments.

(Fourth embodiment)
FIG. 9 is a cross-sectional view of a tip portion of a lead for guiding an antenna wire in a lead frame applied to manufacture of a fourth embodiment of a semiconductor device according to the present invention.

  In the fourth embodiment, as shown in FIG. 9, when the tip portion 3c of the antenna wire guiding lead 3 is processed into a bowl shape, it is processed into an arc shape.

  As a result, the metal wires 2b and 2c, which are antenna wires, do not loosen due to the inward tension, and as an effect similar to the third embodiment, the metal wires 2b and 2c are not lowered from the arc portion of the lead bent portion. Therefore, it is possible to always maintain a certain height or more from the height of the upper surface of the lead frame 7, and to realize a non-contact type semiconductor device with higher reliability than the first embodiment and the second embodiment. Is possible.

(Fifth embodiment)
FIG. 10 is a cross-sectional view of a leading end portion of a lead for guiding an antenna wire in a lead frame applied to manufacture of a fifth embodiment of a semiconductor device according to the present invention.

  In the fifth embodiment, when the tip 3d of the antenna wire guiding lead 3 is processed into a bowl shape as shown in FIG. 10, the position for holding the metal wires 2b and 2c as antenna wires, that is, the surface of the lead frame 7 The groove 9 is formed at a position apart from the wire by a certain height so as to be substantially parallel to the extending direction of the metal wires 2b and 2c, and the wire is held and guided.

  As a result, the metal wires 2b and 2c, which are antenna wires, do not loosen due to the inward tension, and as an effect similar to the third and fourth embodiments, the arc portion of the lead bent portion The contactless semiconductor that can always hold a certain height or more from the height of the upper surface of the lead frame without lowering from the top is more reliable than the first and second embodiments. An apparatus can be realized.

(Sixth embodiment)
FIG. 11 is a cross-sectional view of a leading end portion of a lead for guiding an antenna wire in a lead frame applied to manufacture of a sixth embodiment of a semiconductor device according to the present invention.

  In the sixth embodiment, as shown in FIG. 11, when the tip portion 3e of the antenna wire guiding lead 3 is processed into a bowl shape, the tip portion 3e of the antenna wire guiding lead 3 is left by etching or pressing. By forming the lead frame 7 thinly in the thickness direction, a bowl-shaped tip portion 3e is formed.

  This makes it possible to reduce the thickness of the semiconductor device. Further, as described in the first embodiment, when a covered wire is used for the antenna wire, the number of coil turns is increased and the thickness is reduced. Can be realized simultaneously.

  INDUSTRIAL APPLICABILITY The present invention is useful for a non-contact type IC card that transmits and receives signals to and from a reader / writer wirelessly, a non-contact type semiconductor device called an IC tag, a manufacturing method thereof, and the like.

The perspective view which shows the state which mounted the IC chip and the metal wire in the lead frame applied to manufacture of the semiconductor device which concerns on the 1st Embodiment of this invention. The top view and sectional drawing which show the state which mounted the IC chip and the metal wire in the lead frame applied to manufacture of the semiconductor device which concerns on 1st Embodiment The top view which shows the internal structure of the semiconductor device which concerns on 1st Embodiment Sectional drawing of the semiconductor device which concerns on 1st Embodiment The top view and sectional drawing which show the state which mounted the IC chip and the metal wire in the lead frame applied to manufacture of the semiconductor device which concerns on 2nd Embodiment Sectional drawing of the semiconductor device which concerns on the 2nd Embodiment of this invention. Sectional drawing of the front-end | tip part for guiding the antenna wire in the lead frame applied to manufacture of the 1st, 2nd embodiment of the semiconductor device which concerns on this invention Sectional drawing of the front-end | tip part of the lead for guiding the antenna wire in the lead frame applied to manufacture of 3rd Embodiment of the semiconductor device which concerns on this invention Sectional drawing of the front-end | tip part for guiding the antenna wire in the lead frame applied to manufacture of 4th Embodiment of the semiconductor device which concerns on this invention Sectional drawing of the front-end | tip part for guiding the antenna wire in the lead frame applied to manufacture of 5th Embodiment of the semiconductor device which concerns on this invention Sectional drawing of the front-end | tip part for guiding the antenna wire in the lead frame applied to manufacture of 6th Embodiment of the semiconductor device based on this invention Configuration diagram of conventional non-contact IC tag

Explanation of symbols

1,21 IC chip 2a, 2b, 2c, 26 Metal wire 3, 3a, 3b, 3c, 3d, 3e Antenna wire guiding lead 4, 25 IC chip mounting part 5 Metal wire relay lead 6 Resin sealing part boundary line 7 Lead frame 7a Outer frame portion 8 Resin mold portion 9 Groove portion 22 Wiring board 23 First lead 24 Second lead 27 Sealing resin 28 Exterior resin 29 Metal wire coil

Claims (13)

  A semiconductor device having an IC chip mounted on a lead frame and a radio communication antenna having both ends connected to the mounting portion of the IC chip and resin-molded. A semiconductor device characterized by comprising.   The both ends of the antenna are respectively connected to relay leads configured as part of a lead frame, and each relay lead and the mounting portion of the IC chip are each connected by a metal wire. 2. The semiconductor device according to 1.   2. The semiconductor device according to claim 1, wherein both ends of the antenna are directly connected to a mounting portion of the IC chip.   The semiconductor device according to claim 1, wherein the antenna is configured by a metal wire formed in a loop shape that is held by a plurality of antenna wire guide leads configured as a part of the lead frame.   5. The semiconductor device according to claim 4, wherein the antenna is formed by arranging a metal wire around the antenna wire guiding leads arranged in a radial pattern in a coil shape.   The antenna wire guide lead is extended inward from the outer peripheral portion of the resin mold body, the tip portion is formed in a hook shape, and the metal wire is held outside the hook-shaped tip portion. The semiconductor device according to claim 4, wherein the bending point is configured.   7. The semiconductor device according to claim 6, wherein a tip of the antenna wire guiding lead is bent in a direction substantially perpendicular to the lead frame surface.   7. The hook-shaped tip portion is formed by forming a groove from the top surface of the lead frame while leaving a tip portion at a tip of the antenna wire guiding lead. Semiconductor device.   8. The semiconductor device according to claim 7, wherein the tip of the antenna wire guiding lead is bent in multiple stages.   8. The semiconductor device according to claim 7, wherein the tip of the antenna wire guiding lead is bent in an arc shape.   8. A groove substantially parallel to the extending direction of the metal wire is formed in a portion of the tip of the antenna wire guiding lead that contacts the metal wire constituting the antenna. Semiconductor device. A metal plate is processed by an etching method or a press method, and has an IC chip mounting portion, a plurality of antenna wire guide leads having a hook-like tip, two metal wire relay leads, and an outer frame portion Preparing a lead frame;
Mounting an IC chip on the IC chip mounting portion of the lead frame;
Connecting the electrode portion of the IC chip and the metal wire relay lead with a metal wire by a wire bonding method;
After the first wire bond is made to one of the metal wire relay leads by the wire bonding method, the outer side of the hook-shaped tip of the antenna wire guiding lead is made to lead out with the tension applied to the metal wire. A step of performing a second wire bond on the other of the metal wire relay leads after passing the bonding head one or more times so that the metal wire forms a loop so as to pass;
Sealing the inside of the lead frame with resin;
Separating the resin mold part and the outer frame part of the lead frame;
A method for manufacturing a semiconductor device, comprising: Processing a metal plate by an etching method or a press method to prepare a lead frame having an IC chip mounting portion, a plurality of antenna wire guide leads having a hook shape at the tip, and an outer frame portion;
Mounting an IC chip on the IC chip mounting portion of the lead frame;
After the first wire bond to one of the electrode parts of the IC chip by a wire bonding method, the metal wire is led out in a tensioned state so as to pass outside the hooked tip of the antenna wire guiding lead. And a step of performing a second wire bond to the other of the electrode portions of the IC chip after the bonding head is rotated one or more times so that the metal wire forms a loop,
Sealing the inside of the lead frame with resin;
Separating the resin mold part and the outer frame part of the lead frame;
A method for manufacturing a semiconductor device, comprising:

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