JP2005119948A - Fluoride single crystal for radiation detection, scintillator, and radiation detector - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a fluoride single crystal having a high fluorescence intensity for radiation detection, a scintillator and a radiation detector. <P>SOLUTION: The fluoride single crystal contains at least one element R<SP>1</SP>chosen from Ce, Lu and Gd and is represented by the formula: Ce<SB>1-x</SB>R<SP>1</SP><SB>x</SB>F<SB>3</SB>(wherein 0.001≤x≤0.5). <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a novel fluoride single crystal for radiation detection, a scintillator, and a radiation detector, and in particular, mainly an X-ray computed tomography (X-ray CT), a positron emission tomography apparatus (Positron Emission). Radiation-detecting fluoride single crystals and scintillators used in medical diagnostic devices such as computed tomography (PET), time-of-flight positron emission tomography (TOF-PET), and radiation Relates to the detector.

  Conventionally, radiation has been used for medical diagnosis, industrial nondestructive inspection, and the like. For example, X-ray CT and PET have been put to practical use as medical devices. In such an apparatus using radiation, a detector for detecting radiation such as γ-rays and X-rays, for example, a scintillator is used.

  Here, the scintillator is a substance that radiates visible light or electromagnetic waves having a wavelength close to visible light by stimulation of radiation such as γ-rays or X-rays, and has a high density, a short fluorescence decay time, and radiation resistance. It is required to have excellent properties.

As such a scintillator material for PET, bismuth germanate (Bi ₄ Ge ₃ O ₁₂ single crystal (BGO)) has been conventionally used. However, gadolinium silicate doped with cerium for high performance characteristics ( A Ce: Gd ₂ SiO ₅ (Ce: GSO)) single crystal was developed and put to practical use (see Patent Document 1).

After that, various studies were conducted to obtain higher performance characteristics, and cerium-doped lutetium oxyorthosilicate crystals (Ce: Lu ₂ SiO ₅ : (Ce: LSO)) were developed. (See Patent Documents 2, 3, 4, etc.).

On the other hand, the TOF-PET scintillator requires higher time resolution than the PET scintillator, so CsF is currently used and BaF ₂ manufactured for optical lenses and the like. The use of is being considered. However, CsF has a problem of deliquescence, and BaF ₂ has a short fluorescence lifetime that can be used for TOF-PET. In the ultraviolet region, an ultraviolet detector must be used, and slow and strong light emission occurs. There is a problem that the detector is destroyed.

In addition to such single crystals, various ceramic materials have been studied as scintillators, and polycrystals (ceramics) such as BaFCl: Eu, LaOBr: Tb, CsI: Tl, CaWO ₄ , and CdWO ₄ (see Patent Document 5, etc.) , (Gd, Y) ₂ O ₃ : Polycrystalline rare earth oxide (ceramics) having a cubic structure such as Eu (see Patent Document 6), rare earth oxysulfide such as Gd ₂ O ₂ S: Pr Known are polycrystals (ceramics) of products (see Patent Document 7, etc.).

Since such a ceramic scintillator material is manufactured by sintering powder, various proposals have been made regarding improvement of transparency (translucency), improvement of sinterability, and the like. For example, there is a proposal to improve the light output of the scintillator by setting the amount of impurities in phosphor ceramics such as Gd ₂ O ₂ S: Pr, particularly the content of phosphate radicals (PO ₄ ) to 100 ppm or less (patent) Reference 8). Also, fluorides such as LiF, Li ₂ GeF ₆ , and NaBF ₄ are added to the rare earth oxysulfide powder as a sintering aid, and these mixed powders are sintered by hot isostatic pressing (HIP). A highly densified phosphor ceramic has been proposed (see Patent Document 9).

  As described above, various materials such as oxide single crystals and ceramics have been studied for practical use as a scintillator. However, no material having properties exceeding Ce: LSO has been found so far. , Showing a deadlock. In addition, no scintillator for TOF-PET exceeding CsF has been proposed.

Note that fluoride single crystals have been highly anticipated as laser crystals because of their high permeability over a wide range, small crystal fields, and negative temperature coefficient of refractive index, but other than CsF and BaF ₂ The single crystal has hardly been studied as a radiation detection material such as a scintillator. On the other hand, since there are many factors that make it difficult to produce a fluoride single crystal, such as the production atmosphere, production temperature, purity of raw materials, and control of composition, it is difficult to produce a large bulk crystal. Therefore, the present inventor has developed a technique for producing a high-quality single crystal safely and easily (see Patent Document 10), and as a single crystal for laser, lithium calcium aluminum fluoride (see Patent Document 11), barium lithium fluoride. A single crystal (see Patent Document 12) is manufactured. Furthermore, lithium lithium calcium aluminum has been reported to have a characteristic that can be used as a scintillator (see Non-Patent Document 1 and Non-Patent Document 2), but the density is as small as 2.94 g / cm ^3, and γ rays are used. There was a problem that the absorption coefficient of was small. In addition, cerium fluoride single crystals have a fluorescence wavelength in the ultraviolet region, but colorless transparent single crystals can be adjusted, have no scattering absorption, and have excellent fluorescence lifetime, and thus have been studied as useful scintillators ( However, there is a problem that the light emission amount is half that of BGO.

Japanese Examined Patent Publication No. 62-8472 (Claims) U.S. Pat. No. 4,958,080 (I CLAIM) US Pat. No. 5,025,151 (WHAT IS CLAIMED IS) JP-A-9-118593 (Claims) Japanese Patent Publication No.59-45022 (Claims) JP 59-27283 A (Claims) JP 58-204088 A (Claims) JP-A-7-188655 (Claims) Japanese Patent Publication No. 5-017566 (Claims) Japanese Patent No. 3062753 (Claims) Japanese Patent No. 3089418 (Claims) Japanese Patent No. 3168294 (Claims) JP 2000-290097 A (Claims) "Scintillation decay of LiCaAlF6: Ce3 + single crystals" M.Nikl, N.Solovieva, E.Mihokova, M.Dusek, A.Vedda, M.Martini, K.Shimamura and T.Fukuda, Phys.Stat.Sol. a) 187 (2001) R1-R3. "LiCaAlF6: Ce crystal: a new scintillator" A. Gektin, N. Shiran, S. Neicheva, V. Gavrilyuk, A. Bensalah, T. Fukuda and K. Shimamura, Nuclear Instruments and Methods in Physics Research A 486 (2002) 274-277.

  Then, this invention makes it a subject to provide the fluoride single crystal for radiation detection which has high fluorescence intensity, a scintillator, and a radiation detector in view of such a situation.

When the present inventor contains cerium fluoride with at least one element of lutetium Lu and gadolinium Gd such that Ce _1-x R ¹ _x F ₃ (0.001 ≦ x ≦ 0.5), The present inventors have found that the amount of light emitted by irradiation with radiation such as γ rays and X rays has been dramatically improved, and found that it is useful as a radiation detection material such as a scintillator.

Such a first aspect of the present invention is a fluoride single crystal, which includes Ce and at least one element R ^{1 of} Lu and Gd, and includes Ce _1-x R ¹ _x F ₃ (0.001 ≦ x ≦ 0.5) The present invention resides in a radiation detecting fluoride single crystal.

The second aspect of the present invention, in the first aspect, further includes at least one element R ² of Sc, Y, and La, and (Ce _1-x R ¹ _x ) _1-y R ² _y F ₃ (0 .001 ≦ x ≦ 0.5, y ≦ 0.95), which is a fluoride single crystal for radiation detection.

A third aspect of the present invention includes Ce and at least one element R ^{1 of} Lu and Gd, and is represented by Ce _1-x R ¹ _x F ₃ (0.001 ≦ x ≦ 0.5). A scintillator comprising a fluoride single crystal.

The fourth aspect of the present invention, in the third aspect, further comprises at least one element R ² of Sc, Y and La, and (Ce _1-x R ¹ _x ) _1-y R ² _y F ₃ (0 .001 ≦ x ≦ 0.5, y ≦ 0.95). A scintillator characterized by comprising a fluoride single crystal represented by the following formula.

  According to a fifth aspect of the present invention, there is provided a radiation detection comprising the scintillator comprising the radiation-detecting fluoride single crystal of the first or second aspect, and a photodetector for detecting light emitted from the scintillator. In the vessel.

  Since the fluoride single crystal for radiation detection of the present invention has high fluorescence intensity, it has an effect of having high resolving power.

The fluoride single crystal for radiation detection of the present invention is obtained by substituting a part of Ce of CeF ₃ with Lu and / or Gd. Ce _1-x R ¹ _x F ₃ (0.001 ≦ x ≦ 0.5 R ¹ -substituted cerium fluoride single crystal (hereinafter referred to as “R ¹ : CeF ₃ ”). Since Lu and Gd themselves have high density and do not emit light or are weak, it is presumed that a fluorescent single crystal for radiation detection with high fluorescence intensity can be obtained by substituting part of Ce in CeF ₃ . If x is less than 0.001, the effect of improving the fluorescence intensity is not remarkable, and if it is more than 0.5, the transparency and crystallinity may be lowered or the effect of improving the fluorescence intensity may not be remarkable. Moreover, if it is such a fluoride single crystal, it will not specifically limit as a manufacturing method.

  Lutetium Lu and gadolinium Gd are preferably added as fluorides, but it is preferable to use those that do not have absorption at the fluorescence wavelength.

In addition to at least one element of Lu and Gd, Ce may be further substituted with at least one element R ² of scandium Sc, yttrium Y, and lanthanum La. Sc, Y, and La are elements that have the characteristic of having an electron configuration that satisfies the outermost s orbital and has one electron in the outermost d orbital like Lu and Gd, and thus are advantageous for light emission. . In addition, Ce can be substituted with R ² up to about 95 mol%. The Sc, fluoride single crystal of the present invention comprising Y or La _is expressed by _{^{(Ce 1-x R 1 x}} ) 1-y R 2 y F 3 (0.001 ≦ x ≦ 0.5), y Is 0.95 or less, preferably 0.7 or less, and more preferably 0.005 to 0.5. When y is smaller than 0.005 or larger than 0.95, the effect of improving the fluorescence intensity is not remarkable.

  In addition, in order to increase the intensity of the fluorescence generated when the fluoride single crystal absorbs radiation and to improve the characteristics as a scintillator, other dopants may be added as necessary, for example, as fluorides. Also good. Examples of such a dopant include neodymium Nd, praseodymium Pr, europium Eu, thulium Tm, holmium Ho, erbium Er, terbium Tb, and dysprosium Dy. Further, in order to shift the fluorescence wavelength to the longer wavelength side, barium Ba or the like may be used as a dopant (see E. Auffray et al., Nuclear Instruments and Methods in Physics Research A 383 (1996) 367-390). For example, such a dopant is added in a molar ratio of about 0.01% to 1%. However, when such a dopant is added, the fluorescence lifetime may change, so it is necessary to select it appropriately according to the desired characteristics.

  Since the fluoride single crystal for radiation detection of the present invention is used as a scintillator for a PET or TOF-PET detector, it is necessary to obtain a high-quality and homogeneous bulk crystal. In order to obtain such a bulk crystal, it is preferable to use a production method as described below.

That is, the fluoride single crystal for radiation detection of the present invention is preferably produced by a melt growth method or a solution growth method. In order to produce R ¹ : CeF ₃ of the present invention, the following conditions are used. It is preferable to manufacture by a melt growth method or a solution growth method. This condition is that while maintaining a high vacuum of 10 ⁻⁴ to 10 ⁻⁵ torr, the powder or bulk polycrystalline fluoride raw material, that is, CeF ₃ and R ¹ F _3, etc. is at a temperature below the melting point of the raw material, for example, 500 After heating to a temperature of ˜800 ° C. and introducing a chlorofluorocarbon gas such as CF ₄ and an argon gas into the furnace (mixing ratio, chlorofluorocarbon gas: argon gas = 100: 0 to 0: 100, volume ratio) To increase the temperature above the melting point, react impurities generated in the melt or solution surface and impurities present in the melt or solution with gas to remove impurities and grow from the obtained melt or solution To do.

  According to the above manufacturing method, for example, even when a fluoride raw material having a purity of about 99.9% by weight is used, it is possible to manufacture a high-quality single crystal more easily than the conventional method. The fluoride single crystal of the present invention can be prepared from a melt or solution obtained by removing impurities by a melt growth method or a solution growth method in an inert gas atmosphere such as Ar. Is possible.

  Hereinafter, the fluoride single crystal for radiation detection of the present invention will be described in more detail.

The fluoride single crystal for radiation detection of the present invention comprises a powder or polycrystalline cerium fluoride (CeF ₃ ), a lutetium raw material such as lutetium fluoride (LuF ₃ ) and / or a gadolinium raw material such as gadolinium fluoride (GdF ₃ ). If necessary, raw materials for dopants and elemental R ² materials such as scandium fluoride (ScF ₃ ), yttrium fluoride (YF ₃ ), lanthanum fluoride (LaF ₃ ) are filled in the crucible, and the inside of the furnace The raw material is heated from room temperature to about 500 to 800 ° C., that is, to a predetermined temperature not exceeding the melting point, while maintaining a high vacuum of about 10 ⁻⁴ to 10 ⁻⁵ torr to remove moisture and oxygen contained therein. . Next, after introducing a chlorofluorocarbon gas such as CF ₄ and an argon gas into the production furnace (mixing ratio, chlorofluorocarbon gas: argon gas = 100: 0 to 0: 100, volume ratio), the temperature is raised to the melting point or higher. Then, impurities generated on the surface of the melt or solution and impurities present in the melt or solution are reacted with the fluorocarbon gas to remove the impurities. Then, R ¹ : CeF ₃ is produced from the obtained melt or solution.

  The method for producing a single crystal from the melt or solution thus obtained is not particularly limited, and a pulling method, a Bridgman method, or the like may be used. For example, according to the pulling method, the temperature of the melt is kept in the vicinity of the melting point of each compound, and the seed crystal is lifted at a speed of 0.1 to 10 mm / h while rotating at 1 to 50 rpm. A transparent high-quality single crystal without a ring center is obtained. In addition, the fluoride single crystal of the present invention can be obtained only by slow cooling after melting, and if the conditions are set appropriately, the single crystal can be obtained by slow cooling without using a seed crystal. Has features.

Further, R ¹ : CeF ₃ obtained in this manner is useful as a scintillator for PET or TOF-PET because of its high fluorescence intensity against X-rays and γ-rays.

Such a scintillator obtained by cutting out R ¹ : CeF ₃ into a predetermined size is a photodetector that matches the wavelength of fluorescence generated by absorbing radiation, for example, X-rays or γ-rays, such as visible light or ultraviolet light. By combining with a photodetector such as a photomultiplier tube, a radiation detector can be obtained.

(Example 1)
CeF ₃ and LuF ₃ , which are commercially available bulk pulverized raw materials having a purity of 99.99%, were prepared at a molar ratio of 90:10, and they were filled in a crucible without mixing. It was placed in a single crystal production furnace as it was, evacuated to about 10 ⁻⁴ to 10 ⁻⁵ torr, and heated as it was in a vacuum state to about 700 ° C. to remove moisture and oxygen in the furnace and raw materials. Here, CF ₄ gas and argon gas (volume ratio 50:50) were introduced into the single crystal production furnace, the raw material was heated and melted in a mixed gas atmosphere, and kept in a liquid state for 1 hour. At this time, all impurities appearing on the liquid surface disappeared by reacting with CF ₄ gas. Next, the seed crystal was brought into contact with the melt, and a single crystal was grown and produced in the c-axis direction at a pulling speed of 1 mm / h and a rotation speed of 10 rpm. The produced crystal was a transparent and high-quality lutetium-substituted cerium fluoride (Lu: CeF ₃ ) single crystal without bubbles, cracks, or a scattering center.

(Example 2)
Crystals were grown in the same manner as in Example 1 except that the molar ratio of CeF ₃ and LuF ₃ was 95: 5.

(Example 3)
CeF ₃ and LuF ₃ which are commercially available bulk pulverized raw materials having a purity of 99.99% were prepared at a molar ratio of 99: 1, and these were mixed and filled in a crucible. It was placed in a single crystal production furnace as it was, evacuated to about 10 ⁻⁴ to 10 ⁻⁵ torr, and heated as it was in a vacuum state to about 700 ° C. to remove moisture and oxygen in the furnace and raw materials. Here, CF ₄ gas and argon gas were introduced into the single crystal production furnace, the raw material was heated and melted in a mixed gas atmosphere, and kept in a liquid state for 3 hours. At this time, all impurities appearing on the liquid surface disappeared by reacting with CF ₄ gas. Next, the seed crystal was brought into contact with the melt, and a single crystal was grown and produced in the c-axis direction at a pulling speed of 1.5 mm / h and a rotation speed of 10 rpm. The produced crystal was a transparent and high-quality lutetium-doped cerium fluoride (Lu: CeF ₃ ) single crystal having a diameter of about 15 mm and a length of about 70 mm, free from bubbles, cracks, and a scattering center.

Example 4
CeF ₃ and GdF ₃ , which are commercially available bulk pulverized raw materials having a purity of 99.99%, were prepared at a molar ratio of 90:10, and these were mixed and filled in a crucible. It was placed in a single crystal production furnace as it was, evacuated to about 10 ⁻⁴ to 10 ⁻⁵ torr, and heated as it was in a vacuum state to about 700 ° C. to remove moisture and oxygen in the furnace and raw materials. Here, CF ₄ gas and argon gas were introduced into the single crystal production furnace, the raw material was heated and melted in a mixed gas atmosphere, and kept in a liquid state for 3 hours. At this time, all impurities appearing on the liquid surface disappeared by reacting with CF ₄ gas. Next, the seed crystal was brought into contact with the melt, and a single crystal was grown and produced in the c-axis direction at a pulling speed of 1.5 mm / h and a rotation speed of 10 rpm. The produced crystal was a transparent and high-quality gadolinium-doped cerium fluoride (Gd: CeF ₃ ) single crystal having a diameter of about 15 mm and a length of about 70 mm, free from bubbles, cracks, and a scattering center.

(Example 5)
Crystals were grown in the same manner as in Example 4 except that CeF ₃ and GdF ₃ , which are commercially available bulk pulverized raw materials having a purity of 99.99%, were prepared at a molar ratio of 95: 5.

(Example 6)
Crystals were grown in the same manner as in Example 4 except that CeF ₃ and GdF ₃ , which are commercially available bulk pulverized raw materials having a purity of 99.99%, were prepared at a molar ratio of 97: 3.

(Example 7)
Crystals were grown in the same manner as in Example 4 except that CeF ₃ and GdF ₃ , which are commercially available bulk pulverized raw materials having a purity of 99.99%, were prepared at a molar ratio of 99: 1.

(Comparative Example 1)
Crystals were grown in the same manner as in Example 2 except that LuF ₃ was not added.

(Comparative Example 2)
Except using ErF ₃ in place of LuF ₃ is as in Example 2, were grown crystals.

(Comparative Example 3)
Except using TmF ₃ in place of LuF ₃ is as in Example 2, were grown crystals.

(Comparative Example 4)
Except using HoF ₃ in place of LuF ₃ is as in Example 2, were grown crystals.

(Comparative Example 5)
Crystals were grown in the same manner as in Example 3 except that LuF ₃ was not added.

(Test Example 1)
The result of having measured the X-ray fluorescence spectrum about the single crystal obtained by each Example and each comparative example is shown in FIG. As shown in FIG. 1, when a part of CeF ₃ Ce is substituted with Lu, the fluorescence intensity is remarkably increased. In comparison with Comparative Example 1 in which Lu is not substituted, Example 2 is doubled and Example 1 is 4 times. It was confirmed that it doubled. On the other hand, in Comparative Examples 2 to 4 substituted with Er, Tm, or Ho instead of Lu, the fluorescence intensity was lower than that of Comparative Example 1 that was not substituted with Lu.

(Test Example 2)
Table 1 shows the results of composition analysis of the single crystal obtained in Example 3 by fluorescent X-ray spectrum measurement. The measuring device used was PW2404 type manufactured by Philips Japan. As a result of analyzing the actually formed single crystal, it was found that the amount of Lu contained in the single crystal was lower than the blending ratio of the raw materials. Therefore, in the single crystals of Example 1 and Example 2 as well as Example 3, it can be estimated that the ratio of Lu is smaller than the mixing ratio of the raw materials.

(Test Example 3)
FIG. 2 shows the result of measuring the energy spectrum by γ rays for the single crystals of Example 3 and Comparative Example 5. As shown in FIG. 2, Example 3 was confirmed to have a spectral intensity 2.7 times that of the single crystal obtained in Comparative Example 5, and therefore Example 3 was more γ-ray than Comparative Example 5. It was found that the fluorescence intensity was greatly improved.

(Test Example 4)
For the single crystals of Example 3 and Comparative Example 5, the fluorescence lifetime of γ rays was measured. The results are shown in FIGS. As shown in FIGS. 3 and 4, the fluorescence lifetimes of γ rays in Example 3 and Comparative Example 5 are almost the same value, and the fluoride single crystal of the present invention does not change the fluorescence lifetime, and the amount of light emitted by γ-ray irradiation is the same. It turns out that it improves significantly.

(Test Example 5)
About the single crystal obtained in Examples 4-7, the result of having measured the content of Gd by EDS (energy dispersive spectroscopy: energy dispersive X-ray analysis) measurement is shown in FIG. As a result, it was found that the amount of Gd contained in the single crystal was also lower than the blending ratio of the raw materials.

It is a figure which shows the X-ray fluorescence spectrum of the single crystal of an Example and a comparative example. It is a figure which shows the gamma ray energy spectrum of the single crystal of Example 3 and Comparative Example 5. It is a figure which shows the measurement result of the fluorescence lifetime of the single crystal of Example 3. It is a figure which shows the measurement result of the fluorescence lifetime of the single crystal of the comparative example 5. It is a figure which shows the result of having measured Gd content by the EDS measurement of the single crystal of Examples 4-7.

Claims (5)

It is a fluoride single crystal and includes Ce and at least one element R ^{1 of} Lu and Gd, and is expressed by Ce _1-x R ¹ _x F ₃ (0.001 ≦ x ≦ 0.5). A fluoride single crystal for radiation detection, characterized by In Claim 1, it further contains at least one element R ² of Sc, Y and La, and (Ce _1-x R ¹ _x ) _1-y R ² _y F ₃ (0.001 ≦ x ≦ 0.5, y ≦ 0.95) A fluoride single crystal for radiation detection, characterized in that It is characterized by comprising a fluoride single crystal containing Ce and at least one element R ^{1 of} Lu and Gd and represented by Ce _1-x R ¹ _x F ₃ (0.001 ≦ x ≦ 0.5). Scintillator. In Claim 3, it further contains at least one element R ² of Sc, Y and La, and (Ce _1-x R ¹ _x ) _1-y R ² _y F ₃ (0.001 ≦ x ≦ 0.5, y A scintillator comprising a fluoride single crystal represented by ≦ 0.95). A radiation detector comprising: the scintillator comprising the radiation-detecting fluoride single crystal according to claim 1; and a photodetector for detecting light emitted from the scintillator.

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